id	sid	tid	token	lemma	pos
z029p269t5c	1	1	iii	iii	PROPN
z029p269t5c	1	2	-	-	PUNCT
z029p269t5c	1	3	nitride	nitride	NOUN
z029p269t5c	1	4	electronic	electronic	ADJ
z029p269t5c	1	5	devices	device	NOUN
z029p269t5c	1	6	have	have	AUX
z029p269t5c	1	7	made	make	VERB
z029p269t5c	1	8	significant	significant	ADJ
z029p269t5c	1	9	progress	progress	NOUN
z029p269t5c	1	10	in	in	ADP
z029p269t5c	1	11	high	high	ADJ
z029p269t5c	1	12	frequency	frequency	NOUN
z029p269t5c	1	13	and	and	CCONJ
z029p269t5c	1	14	high	high	ADJ
z029p269t5c	1	15	power	power	NOUN
z029p269t5c	1	16	applications	application	NOUN
z029p269t5c	1	17	in	in	ADP
z029p269t5c	1	18	the	the	DET
z029p269t5c	1	19	past	past	ADJ
z029p269t5c	1	20	decade	decade	NOUN
z029p269t5c	1	21	.	.	PUNCT
z029p269t5c	2	1	in	in	ADP
z029p269t5c	2	2	this	this	DET
z029p269t5c	2	3	work	work	NOUN
z029p269t5c	2	4	,	,	PUNCT
z029p269t5c	2	5	nitride	nitride	NOUN
z029p269t5c	2	6	heterostructures	heterostructure	NOUN
z029p269t5c	2	7	with	with	ADP
z029p269t5c	2	8	>	>	SYM
z029p269t5c	2	9	70	70	NUM
z029p269t5c	2	10	%	%	NOUN
z029p269t5c	2	11	al	al	PROPN
z029p269t5c	2	12	composition	composition	NOUN
z029p269t5c	2	13	algan	algan	PROPN
z029p269t5c	2	14	ternary	ternary	ADJ
z029p269t5c	2	15	alloy	alloy	NOUN
z029p269t5c	2	16	barriers	barrier	NOUN
z029p269t5c	2	17	have	have	AUX
z029p269t5c	2	18	been	be	AUX
z029p269t5c	2	19	grown	grow	VERB
z029p269t5c	2	20	by	by	ADP
z029p269t5c	2	21	molecular	molecular	ADJ
z029p269t5c	2	22	beam	beam	NOUN
z029p269t5c	2	23	epitaxy	epitaxy	PROPN
z029p269t5c	2	24	(	(	PUNCT
z029p269t5c	2	25	mbe	mbe	PROPN
z029p269t5c	2	26	)	)	PUNCT
z029p269t5c	2	27	.	.	PUNCT
z029p269t5c	3	1	with	with	ADP
z029p269t5c	3	2	quasi	quasi	ADJ
z029p269t5c	3	3	-	-	ADJ
z029p269t5c	3	4	growth	growth	ADJ
z029p269t5c	3	5	interruption	interruption	NOUN
z029p269t5c	3	6	technology	technology	NOUN
z029p269t5c	3	7	the	the	DET
z029p269t5c	3	8	mobility	mobility	NOUN
z029p269t5c	3	9	of	of	ADP
z029p269t5c	3	10	the	the	DET
z029p269t5c	3	11	two	two	NUM
z029p269t5c	3	12	-	-	PUNCT
z029p269t5c	3	13	dimensional	dimensional	ADJ
z029p269t5c	3	14	electron	electron	NOUN
z029p269t5c	3	15	gas	gas	NOUN
z029p269t5c	3	16	(	(	PUNCT
z029p269t5c	3	17	2deg	2deg	NUM
z029p269t5c	3	18	)	)	PUNCT
z029p269t5c	3	19	channel	channel	NOUN
z029p269t5c	3	20	has	have	AUX
z029p269t5c	3	21	been	be	AUX
z029p269t5c	3	22	improved	improve	VERB
z029p269t5c	3	23	by	by	ADP
z029p269t5c	3	24	one	one	NUM
z029p269t5c	3	25	order	order	NOUN
z029p269t5c	3	26	of	of	ADP
z029p269t5c	3	27	magnitude	magnitude	NOUN
z029p269t5c	3	28	and	and	CCONJ
z029p269t5c	3	29	reached	reach	VERB
z029p269t5c	3	30	~1400	~1400	PROPN
z029p269t5c	3	31	cm2	cm2	PROPN
z029p269t5c	3	32	/	/	SYM
z029p269t5c	3	33	vs.	vs.	ADP
z029p269t5c	3	34	threshold	threshold	NOUN
z029p269t5c	3	35	voltage	voltage	NOUN
z029p269t5c	3	36	control	control	NOUN
z029p269t5c	3	37	by	by	ADP
z029p269t5c	3	38	work	work	NOUN
z029p269t5c	3	39	function	function	NOUN
z029p269t5c	3	40	engineering	engineering	NOUN
z029p269t5c	3	41	has	have	AUX
z029p269t5c	3	42	been	be	AUX
z029p269t5c	3	43	demonstrated	demonstrate	VERB
z029p269t5c	3	44	in	in	ADP
z029p269t5c	3	45	high	high	ADJ
z029p269t5c	3	46	al	al	PROPN
z029p269t5c	3	47	composition	composition	NOUN
z029p269t5c	3	48	hemts	hemts	PROPN
z029p269t5c	3	49	,	,	PUNCT
z029p269t5c	3	50	enabling	enable	VERB
z029p269t5c	3	51	integration	integration	NOUN
z029p269t5c	3	52	of	of	ADP
z029p269t5c	3	53	enhancement	enhancement	NOUN
z029p269t5c	3	54	(	(	PUNCT
z029p269t5c	3	55	e	e	NOUN
z029p269t5c	3	56	)	)	PUNCT
z029p269t5c	3	57	and	and	CCONJ
z029p269t5c	3	58	depletion	depletion	NOUN
z029p269t5c	3	59	(	(	PUNCT
z029p269t5c	3	60	d	d	NOUN
z029p269t5c	3	61	)	)	PUNCT
z029p269t5c	3	62	mode	mode	PROPN
z029p269t5c	3	63	hemts	hemts	PROPN
z029p269t5c	3	64	.	.	PUNCT
z029p269t5c	4	1	to	to	PART
z029p269t5c	4	2	further	far	ADV
z029p269t5c	4	3	boost	boost	VERB
z029p269t5c	4	4	the	the	DET
z029p269t5c	4	5	radio	radio	NOUN
z029p269t5c	4	6	frequency	frequency	NOUN
z029p269t5c	4	7	(	(	PUNCT
z029p269t5c	4	8	rf	rf	PROPN
z029p269t5c	4	9	)	)	PUNCT
z029p269t5c	4	10	and	and	CCONJ
z029p269t5c	4	11	power	power	NOUN
z029p269t5c	4	12	performance	performance	NOUN
z029p269t5c	4	13	of	of	ADP
z029p269t5c	4	14	nitride	nitride	NOUN
z029p269t5c	4	15	-	-	PUNCT
z029p269t5c	4	16	based	base	VERB
z029p269t5c	4	17	electronics	electronic	NOUN
z029p269t5c	4	18	,	,	PUNCT
z029p269t5c	4	19	scaling	scale	VERB
z029p269t5c	4	20	to	to	ADP
z029p269t5c	4	21	deep	deep	ADJ
z029p269t5c	4	22	submicron	submicron	NOUN
z029p269t5c	4	23	regime	regime	NOUN
z029p269t5c	4	24	is	be	AUX
z029p269t5c	4	25	required	require	VERB
z029p269t5c	4	26	.	.	PUNCT
z029p269t5c	5	1	ultra	ultra	ADJ
z029p269t5c	5	2	-	-	ADJ
z029p269t5c	5	3	thin	thin	ADJ
z029p269t5c	5	4	body	body	NOUN
z029p269t5c	5	5	(	(	PUNCT
z029p269t5c	5	6	utb	utb	NOUN
z029p269t5c	5	7	)	)	PUNCT
z029p269t5c	5	8	devices	device	NOUN
z029p269t5c	5	9	offer	offer	VERB
z029p269t5c	5	10	ways	way	NOUN
z029p269t5c	5	11	for	for	ADP
z029p269t5c	5	12	tight	tight	ADJ
z029p269t5c	5	13	electrostatic	electrostatic	ADJ
z029p269t5c	5	14	and	and	CCONJ
z029p269t5c	5	15	quantum	quantum	NOUN
z029p269t5c	5	16	confinement	confinement	NOUN
z029p269t5c	5	17	of	of	ADP
z029p269t5c	5	18	charge	charge	NOUN
z029p269t5c	5	19	carriers	carrier	NOUN
z029p269t5c	5	20	to	to	ADP
z029p269t5c	5	21	nanoscale	nanoscale	ADJ
z029p269t5c	5	22	dimensions	dimension	NOUN
z029p269t5c	5	23	.	.	PUNCT
z029p269t5c	6	1	with	with	ADP
z029p269t5c	6	2	its	its	PRON
z029p269t5c	6	3	large	large	ADJ
z029p269t5c	6	4	polarization	polarization	NOUN
z029p269t5c	6	5	charge	charge	NOUN
z029p269t5c	6	6	,	,	PUNCT
z029p269t5c	6	7	wide	wide	ADJ
z029p269t5c	6	8	bandgap	bandgap	NOUN
z029p269t5c	6	9	and	and	CCONJ
z029p269t5c	6	10	large	large	ADJ
z029p269t5c	6	11	band	band	NOUN
z029p269t5c	6	12	offsets	offset	NOUN
z029p269t5c	6	13	,	,	PUNCT
z029p269t5c	6	14	aln	aln	ADV
z029p269t5c	6	15	induces	induce	VERB
z029p269t5c	6	16	the	the	DET
z029p269t5c	6	17	maximal	maximal	ADJ
z029p269t5c	6	18	carrier	carrier	NOUN
z029p269t5c	6	19	densities	density	NOUN
z029p269t5c	6	20	while	while	SCONJ
z029p269t5c	6	21	providing	provide	VERB
z029p269t5c	6	22	the	the	DET
z029p269t5c	6	23	best	good	ADJ
z029p269t5c	6	24	confinement	confinement	NOUN
z029p269t5c	6	25	for	for	ADP
z029p269t5c	6	26	nitride	nitride	NOUN
z029p269t5c	6	27	channels	channel	NOUN
z029p269t5c	6	28	of	of	ADP
z029p269t5c	6	29	all	all	DET
z029p269t5c	6	30	compositions	composition	NOUN
z029p269t5c	6	31	.	.	PUNCT
z029p269t5c	7	1	several	several	ADJ
z029p269t5c	7	2	mbe	mbe	PROPN
z029p269t5c	7	3	growth	growth	NOUN
z029p269t5c	7	4	technologies	technology	NOUN
z029p269t5c	7	5	have	have	AUX
z029p269t5c	7	6	been	be	AUX
z029p269t5c	7	7	employed	employ	VERB
z029p269t5c	7	8	in	in	ADP
z029p269t5c	7	9	this	this	DET
z029p269t5c	7	10	work	work	NOUN
z029p269t5c	7	11	to	to	PART
z029p269t5c	7	12	realize	realize	VERB
z029p269t5c	7	13	,	,	PUNCT
z029p269t5c	7	14	for	for	ADP
z029p269t5c	7	15	the	the	DET
z029p269t5c	7	16	first	first	ADJ
z029p269t5c	7	17	time	time	NOUN
z029p269t5c	7	18	,	,	PUNCT
z029p269t5c	7	19	nitride	nitride	NOUN
z029p269t5c	7	20	heterostructures	heterostructure	NOUN
z029p269t5c	7	21	consisting	consist	VERB
z029p269t5c	7	22	of	of	ADP
z029p269t5c	7	23	an	an	DET
z029p269t5c	7	24	ultra	ultra	ADJ
z029p269t5c	7	25	-	-	ADJ
z029p269t5c	7	26	thin	thin	ADJ
z029p269t5c	7	27	strained	strained	ADJ
z029p269t5c	7	28	gan	gan	PROPN
z029p269t5c	7	29	channel	channel	NOUN
z029p269t5c	7	30	sandwiched	sandwich	VERB
z029p269t5c	7	31	in	in	ADP
z029p269t5c	7	32	relaxed	relaxed	ADJ
z029p269t5c	7	33	aln	aln	ADJ
z029p269t5c	7	34	barriers	barrier	NOUN
z029p269t5c	7	35	.	.	PUNCT
z029p269t5c	8	1	the	the	DET
z029p269t5c	8	2	density	density	NOUN
z029p269t5c	8	3	of	of	ADP
z029p269t5c	8	4	the	the	DET
z029p269t5c	8	5	2deg	2deg	NUM
z029p269t5c	8	6	could	could	AUX
z029p269t5c	8	7	be	be	AUX
z029p269t5c	8	8	varied	vary	VERB
z029p269t5c	8	9	by	by	ADP
z029p269t5c	8	10	changing	change	VERB
z029p269t5c	8	11	the	the	DET
z029p269t5c	8	12	gan	gan	PROPN
z029p269t5c	8	13	quantum	quantum	NOUN
z029p269t5c	8	14	well	well	ADJ
z029p269t5c	8	15	thickness	thickness	NOUN
z029p269t5c	8	16	while	while	SCONJ
z029p269t5c	8	17	fixing	fix	VERB
z029p269t5c	8	18	the	the	DET
z029p269t5c	8	19	top	top	ADJ
z029p269t5c	8	20	barrier	barrier	NOUN
z029p269t5c	8	21	thickness	thickness	NOUN
z029p269t5c	8	22	in	in	ADP
z029p269t5c	8	23	the	the	DET
z029p269t5c	8	24	heterostructure	heterostructure	NOUN
z029p269t5c	8	25	.	.	PUNCT
z029p269t5c	9	1	the	the	DET
z029p269t5c	9	2	resulting	result	VERB
z029p269t5c	9	3	aln	aln	PROPN
z029p269t5c	9	4	/	/	SYM
z029p269t5c	9	5	gan	gan	PROPN
z029p269t5c	9	6	/	/	SYM
z029p269t5c	9	7	aln	aln	ADP
z029p269t5c	9	8	n	n	CCONJ
z029p269t5c	9	9	-	-	PUNCT
z029p269t5c	9	10	channel	channel	NOUN
z029p269t5c	9	11	field	field	NOUN
z029p269t5c	9	12	effect	effect	NOUN
z029p269t5c	9	13	transistors	transistor	NOUN
z029p269t5c	9	14	(	(	PUNCT
z029p269t5c	9	15	nfets	nfets	X
z029p269t5c	9	16	)	)	PUNCT
z029p269t5c	9	17	have	have	AUX
z029p269t5c	9	18	been	be	AUX
z029p269t5c	9	19	demonstrated	demonstrate	VERB
z029p269t5c	9	20	on	on	ADP
z029p269t5c	9	21	single	single	ADJ
z029p269t5c	9	22	crystal	crystal	NOUN
z029p269t5c	9	23	bulk	bulk	PROPN
z029p269t5c	9	24	aln	aln	PROPN
z029p269t5c	9	25	substrates	substrate	NOUN
z029p269t5c	9	26	with	with	ADP
z029p269t5c	9	27	regrown	regrown	VERB
z029p269t5c	9	28	ohmic	ohmic	ADJ
z029p269t5c	9	29	contacts	contact	NOUN
z029p269t5c	9	30	.	.	PUNCT
z029p269t5c	10	1	a	a	DET
z029p269t5c	10	2	maximum	maximum	ADJ
z029p269t5c	10	3	drain	drain	NOUN
z029p269t5c	10	4	current	current	ADJ
z029p269t5c	10	5	drive	drive	NOUN
z029p269t5c	10	6	of	of	ADP
z029p269t5c	10	7	~2.8	~2.8	DET
z029p269t5c	10	8	a	a	DET
z029p269t5c	10	9	/	/	SYM
z029p269t5c	10	10	mm	mm	NOUN
z029p269t5c	10	11	has	have	AUX
z029p269t5c	10	12	been	be	AUX
z029p269t5c	10	13	achieved	achieve	VERB
z029p269t5c	10	14	.	.	PUNCT
z029p269t5c	11	1	a	a	DET
z029p269t5c	11	2	current	current	ADJ
z029p269t5c	11	3	cut	cut	VERB
z029p269t5c	11	4	-	-	PUNCT
z029p269t5c	11	5	off	off	ADP
z029p269t5c	11	6	frequency	frequency	NOUN
z029p269t5c	11	7	ft	ft	NOUN
z029p269t5c	11	8	of	of	ADP
z029p269t5c	11	9	120	120	NUM
z029p269t5c	11	10	ghz	ghz	NOUN
z029p269t5c	11	11	has	have	AUX
z029p269t5c	11	12	been	be	AUX
z029p269t5c	11	13	measured	measure	VERB
z029p269t5c	11	14	on	on	ADP
z029p269t5c	11	15	65	65	NUM
z029p269t5c	11	16	-	-	PUNCT
z029p269t5c	11	17	nm	nm	NOUN
z029p269t5c	11	18	-	-	PUNCT
z029p269t5c	11	19	long	long	ADJ
z029p269t5c	11	20	gate	gate	NOUN
z029p269t5c	11	21	devices	device	NOUN
z029p269t5c	11	22	.	.	PUNCT
z029p269t5c	12	1	nitride	nitride	NOUN
z029p269t5c	12	2	devices	device	NOUN
z029p269t5c	12	3	on	on	ADP
z029p269t5c	12	4	aln	aln	PROPN
z029p269t5c	12	5	platform	platform	NOUN
z029p269t5c	12	6	stand	stand	VERB
z029p269t5c	12	7	also	also	ADV
z029p269t5c	12	8	to	to	PART
z029p269t5c	12	9	benefit	benefit	VERB
z029p269t5c	12	10	from	from	ADP
z029p269t5c	12	11	the	the	DET
z029p269t5c	12	12	symmetry	symmetry	NOUN
z029p269t5c	12	13	of	of	ADP
z029p269t5c	12	14	electronic	electronic	ADJ
z029p269t5c	12	15	polarization	polarization	NOUN
z029p269t5c	12	16	:	:	PUNCT
z029p269t5c	12	17	high	high	ADJ
z029p269t5c	12	18	density	density	NOUN
z029p269t5c	12	19	hole	hole	NOUN
z029p269t5c	12	20	gases	gas	NOUN
z029p269t5c	12	21	can	can	AUX
z029p269t5c	12	22	be	be	AUX
z029p269t5c	12	23	generated	generate	VERB
z029p269t5c	12	24	in	in	ADP
z029p269t5c	12	25	much	much	ADV
z029p269t5c	12	26	the	the	DET
z029p269t5c	12	27	same	same	ADJ
z029p269t5c	12	28	way	way	NOUN
z029p269t5c	12	29	as	as	ADP
z029p269t5c	12	30	the	the	DET
z029p269t5c	12	31	high	high	ADJ
z029p269t5c	12	32	density	density	NOUN
z029p269t5c	12	33	2deg	2deg	NUM
z029p269t5c	12	34	in	in	ADP
z029p269t5c	12	35	gan	gan	PROPN
z029p269t5c	12	36	hemts	hemts	PROPN
z029p269t5c	12	37	,	,	PUNCT
z029p269t5c	12	38	thus	thus	ADV
z029p269t5c	12	39	enabling	enable	VERB
z029p269t5c	12	40	p	p	NOUN
z029p269t5c	12	41	-	-	PUNCT
z029p269t5c	12	42	channel	channel	NOUN
z029p269t5c	12	43	fets	fet	NOUN
z029p269t5c	12	44	(	(	PUNCT
z029p269t5c	12	45	pfets	pfet	NOUN
z029p269t5c	12	46	)	)	PUNCT
z029p269t5c	12	47	on	on	ADP
z029p269t5c	12	48	the	the	DET
z029p269t5c	12	49	same	same	ADJ
z029p269t5c	12	50	material	material	NOUN
z029p269t5c	12	51	platform	platform	NOUN
z029p269t5c	12	52	as	as	ADP
z029p269t5c	12	53	nfets	nfet	NOUN
z029p269t5c	12	54	in	in	ADP
z029p269t5c	12	55	a	a	DET
z029p269t5c	12	56	logical	logical	ADJ
z029p269t5c	12	57	manner	manner	NOUN
z029p269t5c	12	58	.	.	PUNCT
z029p269t5c	13	1	polarization	polarization	NOUN
z029p269t5c	13	2	-	-	PUNCT
z029p269t5c	13	3	induced	induce	VERB
z029p269t5c	13	4	p	p	NOUN
z029p269t5c	13	5	-	-	PUNCT
z029p269t5c	13	6	type	type	NOUN
z029p269t5c	13	7	doping	doping	NOUN
z029p269t5c	13	8	is	be	AUX
z029p269t5c	13	9	realized	realize	VERB
z029p269t5c	13	10	in	in	ADP
z029p269t5c	13	11	a	a	DET
z029p269t5c	13	12	utb	utb	ADJ
z029p269t5c	13	13	strained	strained	ADJ
z029p269t5c	13	14	gan	gan	PROPN
z029p269t5c	13	15	channel	channel	NOUN
z029p269t5c	13	16	on	on	ADP
z029p269t5c	13	17	aln	aln	PROPN
z029p269t5c	13	18	template	template	NOUN
z029p269t5c	13	19	grown	grow	VERB
z029p269t5c	13	20	by	by	ADP
z029p269t5c	13	21	mbe	mbe	PROPN
z029p269t5c	13	22	,	,	PUNCT
z029p269t5c	13	23	with	with	ADP
z029p269t5c	13	24	a	a	DET
z029p269t5c	13	25	hole	hole	NOUN
z029p269t5c	13	26	gas	gas	NOUN
z029p269t5c	13	27	density	density	NOUN
z029p269t5c	13	28	close	close	ADV
z029p269t5c	13	29	to	to	ADP
z029p269t5c	13	30	the	the	DET
z029p269t5c	13	31	interface	interface	NOUN
z029p269t5c	13	32	polarization	polarization	NOUN
z029p269t5c	13	33	charge	charge	NOUN
z029p269t5c	13	34	(	(	PUNCT
z029p269t5c	13	35	~5	~5	NOUN
z029p269t5c	13	36	x	x	SYM
z029p269t5c	13	37	1013	1013	NUM
z029p269t5c	13	38	/cm2	/cm2	NOUN
z029p269t5c	13	39	)	)	PUNCT
z029p269t5c	13	40	.	.	PUNCT
z029p269t5c	14	1	high	high	ADJ
z029p269t5c	14	2	density	density	NOUN
z029p269t5c	14	3	of	of	ADP
z029p269t5c	14	4	2d	2d	NOUN
z029p269t5c	14	5	hole	hole	NOUN
z029p269t5c	14	6	gases	gas	NOUN
z029p269t5c	14	7	are	be	AUX
z029p269t5c	14	8	resistant	resistant	ADJ
z029p269t5c	14	9	to	to	PART
z029p269t5c	14	10	freeze	freeze	VERB
z029p269t5c	14	11	out	out	ADP
z029p269t5c	14	12	at	at	ADP
z029p269t5c	14	13	cryogenic	cryogenic	ADJ
z029p269t5c	14	14	temperature	temperature	NOUN
z029p269t5c	14	15	in	in	ADP
z029p269t5c	14	16	temperature	temperature	NOUN
z029p269t5c	14	17	-	-	PUNCT
z029p269t5c	14	18	dependent	dependent	ADJ
z029p269t5c	14	19	hall	hall	NOUN
z029p269t5c	14	20	-	-	PUNCT
z029p269t5c	14	21	effect	effect	NOUN
z029p269t5c	14	22	measurements	measurement	NOUN
z029p269t5c	14	23	.	.	PUNCT
z029p269t5c	15	1	both	both	DET
z029p269t5c	15	2	e	e	NOUN
z029p269t5c	15	3	/	/	SYM
z029p269t5c	15	4	d	d	NOUN
z029p269t5c	15	5	-	-	PUNCT
z029p269t5c	15	6	mode	mode	ADJ
z029p269t5c	15	7	operations	operation	NOUN
z029p269t5c	15	8	are	be	AUX
z029p269t5c	15	9	achieved	achieve	VERB
z029p269t5c	15	10	based	base	VERB
z029p269t5c	15	11	on	on	ADP
z029p269t5c	15	12	gan	gan	PROPN
z029p269t5c	15	13	/	/	SYM
z029p269t5c	15	14	aln	aln	PROPN
z029p269t5c	15	15	heterostructures	heterostructure	NOUN
z029p269t5c	15	16	.	.	PUNCT
z029p269t5c	16	1	driven	drive	VERB
z029p269t5c	16	2	by	by	ADP
z029p269t5c	16	3	the	the	DET
z029p269t5c	16	4	high	high	ADJ
z029p269t5c	16	5	hole	hole	NOUN
z029p269t5c	16	6	density	density	NOUN
z029p269t5c	16	7	,	,	PUNCT
z029p269t5c	16	8	a	a	DET
z029p269t5c	16	9	long	long	ADJ
z029p269t5c	16	10	channel	channel	NOUN
z029p269t5c	16	11	d	d	NOUN
z029p269t5c	16	12	-	-	PUNCT
z029p269t5c	16	13	mode	mode	NOUN
z029p269t5c	16	14	pfet	pfet	NOUN
z029p269t5c	16	15	shows	show	VERB
z029p269t5c	16	16	a	a	DET
z029p269t5c	16	17	drain	drain	NOUN
z029p269t5c	16	18	current	current	NOUN
z029p269t5c	16	19	of	of	ADP
z029p269t5c	16	20	~150	~150	PROPN
z029p269t5c	16	21	ma	ma	PROPN
z029p269t5c	16	22	/	/	SYM
z029p269t5c	16	23	mm	mm	NOUN
z029p269t5c	16	24	at	at	ADP
z029p269t5c	16	25	300	300	NUM
z029p269t5c	16	26	k	k	X
z029p269t5c	16	27	which	which	PRON
z029p269t5c	16	28	increases	increase	VERB
z029p269t5c	16	29	to	to	ADP
z029p269t5c	16	30	~270	~270	PROPN
z029p269t5c	16	31	ma	ma	PROPN
z029p269t5c	16	32	/	/	SYM
z029p269t5c	16	33	mm	mm	PROPN
z029p269t5c	16	34	at	at	ADP
z029p269t5c	16	35	77	77	NUM
z029p269t5c	16	36	k.	k.	NOUN
z029p269t5c	16	37	the	the	DET
z029p269t5c	16	38	utb	utb	ADJ
z029p269t5c	16	39	gan	gan	PROPN
z029p269t5c	16	40	nfets	nfet	NOUN
z029p269t5c	16	41	and	and	CCONJ
z029p269t5c	16	42	pfets	pfet	NOUN
z029p269t5c	16	43	on	on	ADP
z029p269t5c	16	44	aln	aln	ADV
z029p269t5c	16	45	present	present	VERB
z029p269t5c	16	46	a	a	DET
z029p269t5c	16	47	compelling	compelling	ADJ
z029p269t5c	16	48	case	case	NOUN
z029p269t5c	16	49	for	for	ADP
z029p269t5c	16	50	iii	iii	NUM
z029p269t5c	16	51	-	-	PUNCT
z029p269t5c	16	52	nitride	nitride	NOUN
z029p269t5c	16	53	complementary	complementary	ADJ
z029p269t5c	16	54	logic	logic	NOUN
z029p269t5c	16	55	and	and	CCONJ
z029p269t5c	16	56	high	high	ADJ
z029p269t5c	16	57	power	power	NOUN
z029p269t5c	16	58	applications	application	NOUN
z029p269t5c	16	59	.	.	PUNCT
z029p269t5c	17	1	various	various	ADJ
z029p269t5c	17	2	channels	channel	NOUN
z029p269t5c	17	3	(	(	PUNCT
z029p269t5c	17	4	ingan	ingan	PROPN
z029p269t5c	17	5	,	,	PUNCT
z029p269t5c	17	6	algan	algan	PROPN
z029p269t5c	17	7	etc	etc	X
z029p269t5c	17	8	.	.	PUNCT
z029p269t5c	17	9	)	)	PUNCT
z029p269t5c	17	10	could	could	AUX
z029p269t5c	17	11	be	be	AUX
z029p269t5c	17	12	explored	explore	VERB
z029p269t5c	17	13	in	in	ADP
z029p269t5c	17	14	the	the	DET
z029p269t5c	17	15	future	future	NOUN
z029p269t5c	17	16	to	to	PART
z029p269t5c	17	17	improve	improve	VERB
z029p269t5c	17	18	carrier	carrier	NOUN
z029p269t5c	17	19	mobility	mobility	NOUN
z029p269t5c	17	20	,	,	PUNCT
z029p269t5c	17	21	induce	induce	VERB
z029p269t5c	17	22	higher	high	ADJ
z029p269t5c	17	23	carrier	carrier	NOUN
z029p269t5c	17	24	density	density	NOUN
z029p269t5c	17	25	or	or	CCONJ
z029p269t5c	17	26	enhance	enhance	VERB
z029p269t5c	17	27	breakdown	breakdown	NOUN
z029p269t5c	17	28	characteristics	characteristic	NOUN
z029p269t5c	17	29	.	.	PUNCT
z029p269t5c	18	1	technologies	technology	NOUN
z029p269t5c	18	2	for	for	ADP
z029p269t5c	18	3	monolithic	monolithic	ADJ
z029p269t5c	18	4	integration	integration	NOUN
z029p269t5c	18	5	of	of	ADP
z029p269t5c	18	6	nitride	nitride	PROPN
z029p269t5c	18	7	channel	channel	PROPN
z029p269t5c	18	8	nfets	nfet	NOUN
z029p269t5c	18	9	and	and	CCONJ
z029p269t5c	18	10	pfets	pfet	NOUN
z029p269t5c	18	11	on	on	ADP
z029p269t5c	18	12	aln	aln	ADV
z029p269t5c	18	13	have	have	AUX
z029p269t5c	18	14	been	be	AUX
z029p269t5c	18	15	proposed	propose	VERB
z029p269t5c	18	16	.	.	PUNCT