id	sid	tid	token	lemma	pos
wm117m03x1v	1	1	as	as	SCONJ
wm117m03x1v	1	2	state	state	NOUN
wm117m03x1v	1	3	-	-	PUNCT
wm117m03x1v	1	4	of	of	ADP
wm117m03x1v	1	5	-	-	PUNCT
wm117m03x1v	1	6	the	the	DET
wm117m03x1v	1	7	-	-	PUNCT
wm117m03x1v	1	8	art	art	NOUN
wm117m03x1v	1	9	transistor	transistor	NOUN
wm117m03x1v	1	10	features	feature	NOUN
wm117m03x1v	1	11	continue	continue	VERB
wm117m03x1v	1	12	to	to	PART
wm117m03x1v	1	13	shrink	shrink	VERB
wm117m03x1v	1	14	and	and	CCONJ
wm117m03x1v	1	15	the	the	DET
wm117m03x1v	1	16	incorporation	incorporation	NOUN
wm117m03x1v	1	17	of	of	ADP
wm117m03x1v	1	18	high	high	ADJ
wm117m03x1v	1	19	-	-	PUNCT
wm117m03x1v	1	20	k	k	NOUN
wm117m03x1v	1	21	,	,	PUNCT
wm117m03x1v	1	22	low	low	ADJ
wm117m03x1v	1	23	-	-	PUNCT
wm117m03x1v	1	24	k	k	PROPN
wm117m03x1v	1	25	isolation	isolation	NOUN
wm117m03x1v	1	26	dielectric	dielectric	NOUN
wm117m03x1v	1	27	materials	material	NOUN
wm117m03x1v	1	28	and	and	CCONJ
wm117m03x1v	1	29	strained	strained	ADJ
wm117m03x1v	1	30	and	and	CCONJ
wm117m03x1v	1	31	sige	sige	ADJ
wm117m03x1v	1	32	layers	layer	NOUN
wm117m03x1v	1	33	on	on	ADP
wm117m03x1v	1	34	silicon	silicon	NOUN
wm117m03x1v	1	35	becomes	become	VERB
wm117m03x1v	1	36	common	common	ADJ
wm117m03x1v	1	37	,	,	PUNCT
wm117m03x1v	1	38	chip	chip	NOUN
wm117m03x1v	1	39	density	density	NOUN
wm117m03x1v	1	40	and	and	CCONJ
wm117m03x1v	1	41	performance	performance	NOUN
wm117m03x1v	1	42	are	be	AUX
wm117m03x1v	1	43	improved	improve	VERB
wm117m03x1v	1	44	.	.	PUNCT
wm117m03x1v	2	1	however	however	ADV
wm117m03x1v	2	2	,	,	PUNCT
wm117m03x1v	2	3	system	system	NOUN
wm117m03x1v	2	4	performance	performance	NOUN
wm117m03x1v	2	5	has	have	AUX
wm117m03x1v	2	6	not	not	PART
wm117m03x1v	2	7	kept	keep	VERB
wm117m03x1v	2	8	up	up	ADP
wm117m03x1v	2	9	with	with	ADP
wm117m03x1v	2	10	the	the	DET
wm117m03x1v	2	11	pace	pace	NOUN
wm117m03x1v	2	12	especially	especially	ADV
wm117m03x1v	2	13	at	at	ADP
wm117m03x1v	2	14	multi	multi	ADJ
wm117m03x1v	2	15	-	-	ADJ
wm117m03x1v	2	16	ghz	ghz	ADJ
wm117m03x1v	2	17	clock	clock	NOUN
wm117m03x1v	2	18	rates	rate	NOUN
wm117m03x1v	2	19	.	.	PUNCT
wm117m03x1v	3	1	the	the	DET
wm117m03x1v	3	2	bottleneck	bottleneck	NOUN
wm117m03x1v	3	3	is	be	AUX
wm117m03x1v	3	4	packaging	packaging	NOUN
wm117m03x1v	3	5	.	.	PUNCT
wm117m03x1v	4	1	conventional	conventional	ADJ
wm117m03x1v	4	2	packaging	packaging	NOUN
wm117m03x1v	4	3	techniques	technique	NOUN
wm117m03x1v	4	4	require	require	VERB
wm117m03x1v	4	5	high	high	ADJ
wm117m03x1v	4	6	driving	drive	VERB
wm117m03x1v	4	7	current	current	ADJ
wm117m03x1v	4	8	and	and	CCONJ
wm117m03x1v	4	9	large	large	ADJ
wm117m03x1v	4	10	in	in	ADP
wm117m03x1v	4	11	-	-	PUNCT
wm117m03x1v	4	12	die	die	NOUN
wm117m03x1v	4	13	area	area	NOUN
wm117m03x1v	4	14	for	for	ADP
wm117m03x1v	4	15	bonding	bonding	NOUN
wm117m03x1v	4	16	pads	pad	NOUN
wm117m03x1v	4	17	,	,	PUNCT
wm117m03x1v	4	18	and	and	CCONJ
wm117m03x1v	4	19	provide	provide	VERB
wm117m03x1v	4	20	limited	limited	ADJ
wm117m03x1v	4	21	bandwidth	bandwidth	NOUN
wm117m03x1v	4	22	.	.	PUNCT
wm117m03x1v	5	1	as	as	ADP
wm117m03x1v	5	2	a	a	DET
wm117m03x1v	5	3	result	result	NOUN
wm117m03x1v	5	4	,	,	PUNCT
wm117m03x1v	5	5	several	several	ADJ
wm117m03x1v	5	6	technologies	technology	NOUN
wm117m03x1v	5	7	,	,	PUNCT
wm117m03x1v	5	8	such	such	ADJ
wm117m03x1v	5	9	as	as	ADP
wm117m03x1v	5	10	system	system	NOUN
wm117m03x1v	5	11	-	-	PUNCT
wm117m03x1v	5	12	on	on	ADP
wm117m03x1v	5	13	-	-	PUNCT
wm117m03x1v	5	14	chip	chip	NOUN
wm117m03x1v	5	15	,	,	PUNCT
wm117m03x1v	5	16	system	system	NOUN
wm117m03x1v	5	17	-	-	PUNCT
wm117m03x1v	5	18	in	in	ADP
wm117m03x1v	5	19	-	-	PUNCT
wm117m03x1v	5	20	packaging	packaging	NOUN
wm117m03x1v	5	21	and	and	CCONJ
wm117m03x1v	5	22	system	system	NOUN
wm117m03x1v	5	23	-	-	PUNCT
wm117m03x1v	5	24	on	on	ADP
wm117m03x1v	5	25	-	-	PUNCT
wm117m03x1v	5	26	packaging	packaging	NOUN
wm117m03x1v	5	27	,	,	PUNCT
wm117m03x1v	5	28	have	have	AUX
wm117m03x1v	5	29	been	be	AUX
wm117m03x1v	5	30	actively	actively	ADV
wm117m03x1v	5	31	pursed	purse	VERB
wm117m03x1v	5	32	to	to	PART
wm117m03x1v	5	33	meet	meet	VERB
wm117m03x1v	5	34	the	the	DET
wm117m03x1v	5	35	demands	demand	NOUN
wm117m03x1v	5	36	of	of	ADP
wm117m03x1v	5	37	low	low	ADJ
wm117m03x1v	5	38	power	power	NOUN
wm117m03x1v	5	39	,	,	PUNCT
wm117m03x1v	5	40	high	high	ADJ
wm117m03x1v	5	41	i	i	NOUN
wm117m03x1v	5	42	/	/	SYM
wm117m03x1v	5	43	o	o	NOUN
wm117m03x1v	5	44	counts	count	NOUN
wm117m03x1v	5	45	and	and	CCONJ
wm117m03x1v	5	46	fast	fast	ADJ
wm117m03x1v	5	47	chip	chip	NOUN
wm117m03x1v	5	48	-	-	PUNCT
wm117m03x1v	5	49	to	to	ADP
wm117m03x1v	5	50	-	-	PUNCT
wm117m03x1v	5	51	chip	chip	NOUN
wm117m03x1v	5	52	communication	communication	NOUN
wm117m03x1v	5	53	.	.	PUNCT
wm117m03x1v	6	1	here	here	ADV
wm117m03x1v	6	2	,	,	PUNCT
wm117m03x1v	6	3	we	we	PRON
wm117m03x1v	6	4	present	present	VERB
wm117m03x1v	6	5	a	a	DET
wm117m03x1v	6	6	novel	novel	ADJ
wm117m03x1v	6	7	packaging	packaging	NOUN
wm117m03x1v	6	8	technique	technique	NOUN
wm117m03x1v	6	9	,	,	PUNCT
wm117m03x1v	6	10	quilt	quilt	NOUN
wm117m03x1v	6	11	packaging	packaging	NOUN
wm117m03x1v	6	12	(	(	PUNCT
wm117m03x1v	6	13	qp	qp	NOUN
wm117m03x1v	6	14	)	)	PUNCT
wm117m03x1v	6	15	,	,	PUNCT
wm117m03x1v	6	16	for	for	ADP
wm117m03x1v	6	17	system	system	NOUN
wm117m03x1v	6	18	-	-	PUNCT
wm117m03x1v	6	19	in	in	ADP
wm117m03x1v	6	20	-	-	PUNCT
wm117m03x1v	6	21	package	package	NOUN
wm117m03x1v	6	22	.	.	PUNCT
wm117m03x1v	7	1	qp	qp	NOUN
wm117m03x1v	7	2	uses	use	VERB
wm117m03x1v	7	3	microelectromechanical	microelectromechanical	ADJ
wm117m03x1v	7	4	systems	system	NOUN
wm117m03x1v	7	5	(	(	PUNCT
wm117m03x1v	7	6	mems	mem	NOUN
wm117m03x1v	7	7	)	)	PUNCT
wm117m03x1v	7	8	inspired	inspire	VERB
wm117m03x1v	7	9	fabrication	fabrication	NOUN
wm117m03x1v	7	10	techniques	technique	NOUN
wm117m03x1v	7	11	to	to	PART
wm117m03x1v	7	12	form	form	VERB
wm117m03x1v	7	13	contacts	contact	NOUN
wm117m03x1v	7	14	along	along	ADP
wm117m03x1v	7	15	the	the	DET
wm117m03x1v	7	16	vertical	vertical	ADJ
wm117m03x1v	7	17	edge	edge	NOUN
wm117m03x1v	7	18	facets	facet	NOUN
wm117m03x1v	7	19	of	of	ADP
wm117m03x1v	7	20	the	the	DET
wm117m03x1v	7	21	integrated	integrate	VERB
wm117m03x1v	7	22	circuits	circuit	NOUN
wm117m03x1v	7	23	(	(	PUNCT
wm117m03x1v	7	24	ics	ics	X
wm117m03x1v	7	25	)	)	PUNCT
wm117m03x1v	7	26	during	during	ADP
wm117m03x1v	7	27	the	the	DET
wm117m03x1v	7	28	back	back	ADJ
wm117m03x1v	7	29	-	-	PUNCT
wm117m03x1v	7	30	end	end	NOUN
wm117m03x1v	7	31	-	-	PUNCT
wm117m03x1v	7	32	of	of	ADP
wm117m03x1v	7	33	-	-	PUNCT
wm117m03x1v	7	34	line	line	NOUN
wm117m03x1v	7	35	process	process	NOUN
wm117m03x1v	7	36	,	,	PUNCT
wm117m03x1v	7	37	enabling	enable	VERB
wm117m03x1v	7	38	the	the	DET
wm117m03x1v	7	39	ics	ics	NOUN
wm117m03x1v	7	40	to	to	PART
wm117m03x1v	7	41	be	be	AUX
wm117m03x1v	7	42	interconnected	interconnect	VERB
wm117m03x1v	7	43	by	by	ADP
wm117m03x1v	7	44	butting	butt	VERB
wm117m03x1v	7	45	them	they	PRON
wm117m03x1v	7	46	against	against	ADP
wm117m03x1v	7	47	each	each	DET
wm117m03x1v	7	48	other	other	ADJ
wm117m03x1v	7	49	.	.	PUNCT
wm117m03x1v	8	1	a	a	DET
wm117m03x1v	8	2	shorter	short	ADJ
wm117m03x1v	8	3	path	path	NOUN
wm117m03x1v	8	4	between	between	ADP
wm117m03x1v	8	5	chips	chip	NOUN
wm117m03x1v	8	6	is	be	AUX
wm117m03x1v	8	7	established	establish	VERB
wm117m03x1v	8	8	compared	compare	VERB
wm117m03x1v	8	9	with	with	ADP
wm117m03x1v	8	10	other	other	ADJ
wm117m03x1v	8	11	system	system	NOUN
wm117m03x1v	8	12	-	-	PUNCT
wm117m03x1v	8	13	in	in	ADP
wm117m03x1v	8	14	-	-	PUNCT
wm117m03x1v	8	15	packaging	packaging	NOUN
wm117m03x1v	8	16	techniques	technique	NOUN
wm117m03x1v	8	17	pursued	pursue	VERB
wm117m03x1v	8	18	by	by	ADP
wm117m03x1v	8	19	industry	industry	NOUN
wm117m03x1v	8	20	,	,	PUNCT
wm117m03x1v	8	21	which	which	PRON
wm117m03x1v	8	22	leads	lead	VERB
wm117m03x1v	8	23	to	to	ADP
wm117m03x1v	8	24	shorter	short	ADJ
wm117m03x1v	8	25	delay	delay	NOUN
wm117m03x1v	8	26	,	,	PUNCT
wm117m03x1v	8	27	less	less	ADJ
wm117m03x1v	8	28	power	power	NOUN
wm117m03x1v	8	29	consumption	consumption	NOUN
wm117m03x1v	8	30	and	and	CCONJ
wm117m03x1v	8	31	better	well	ADJ
wm117m03x1v	8	32	signal	signal	NOUN
wm117m03x1v	8	33	integrity	integrity	NOUN
wm117m03x1v	8	34	.	.	PUNCT
wm117m03x1v	9	1	the	the	DET
wm117m03x1v	9	2	contacts	contact	NOUN
wm117m03x1v	9	3	are	be	AUX
wm117m03x1v	9	4	formed	form	VERB
wm117m03x1v	9	5	by	by	ADP
wm117m03x1v	9	6	copper	copper	NOUN
wm117m03x1v	9	7	nodules	nodule	NOUN
wm117m03x1v	9	8	embedded	embed	VERB
wm117m03x1v	9	9	inside	inside	ADP
wm117m03x1v	9	10	the	the	DET
wm117m03x1v	9	11	silicon	silicon	NOUN
wm117m03x1v	9	12	substrate	substrate	NOUN
wm117m03x1v	9	13	.	.	PUNCT
wm117m03x1v	10	1	nodules	nodule	NOUN
wm117m03x1v	10	2	are	be	AUX
wm117m03x1v	10	3	made	make	VERB
wm117m03x1v	10	4	of	of	ADP
wm117m03x1v	10	5	trenches	trench	NOUN
wm117m03x1v	10	6	into	into	ADP
wm117m03x1v	10	7	the	the	DET
wm117m03x1v	10	8	silicon	silicon	NOUN
wm117m03x1v	10	9	substrate	substrate	NOUN
wm117m03x1v	10	10	by	by	ADP
wm117m03x1v	10	11	deep	deep	ADJ
wm117m03x1v	10	12	reactive	reactive	ADJ
wm117m03x1v	10	13	ion	ion	NOUN
wm117m03x1v	10	14	etch	etch	NOUN
wm117m03x1v	10	15	(	(	PUNCT
wm117m03x1v	10	16	drie	drie	PROPN
wm117m03x1v	10	17	)	)	PUNCT
wm117m03x1v	10	18	,	,	PUNCT
wm117m03x1v	10	19	which	which	PRON
wm117m03x1v	10	20	are	be	AUX
wm117m03x1v	10	21	filled	fill	VERB
wm117m03x1v	10	22	by	by	ADP
wm117m03x1v	10	23	electrolytic	electrolytic	ADJ
wm117m03x1v	10	24	copper	copper	NOUN
wm117m03x1v	10	25	plating	plating	NOUN
wm117m03x1v	10	26	followed	follow	VERB
wm117m03x1v	10	27	by	by	ADP
wm117m03x1v	10	28	chemical	chemical	NOUN
wm117m03x1v	10	29	-	-	PUNCT
wm117m03x1v	10	30	mechanical	mechanical	ADJ
wm117m03x1v	10	31	polishing	polishing	NOUN
wm117m03x1v	10	32	(	(	PUNCT
wm117m03x1v	10	33	cmp	cmp	NOUN
wm117m03x1v	10	34	)	)	PUNCT
wm117m03x1v	10	35	.	.	PUNCT
wm117m03x1v	11	1	different	different	ADJ
wm117m03x1v	11	2	qp	qp	PROPN
wm117m03x1v	11	3	structures	structure	NOUN
wm117m03x1v	11	4	are	be	AUX
wm117m03x1v	11	5	fabricated	fabricate	VERB
wm117m03x1v	11	6	with	with	ADP
wm117m03x1v	11	7	nodule	nodule	ADJ
wm117m03x1v	11	8	depth	depth	NOUN
wm117m03x1v	11	9	of	of	ADP
wm117m03x1v	11	10	20	20	NUM
wm117m03x1v	11	11	åµm	åµm	NOUN
wm117m03x1v	11	12	and	and	CCONJ
wm117m03x1v	11	13	widths	width	NOUN
wm117m03x1v	11	14	from	from	ADP
wm117m03x1v	11	15	10	10	NUM
wm117m03x1v	11	16	åµm	åµm	NOUN
wm117m03x1v	11	17	to	to	ADP
wm117m03x1v	11	18	100	100	NUM
wm117m03x1v	11	19	åµm	åµm	NOUN
wm117m03x1v	11	20	.	.	PROPN
wm117m03x1v	12	1	to	to	PART
wm117m03x1v	12	2	further	far	ADV
wm117m03x1v	12	3	improve	improve	VERB
wm117m03x1v	12	4	the	the	DET
wm117m03x1v	12	5	transmission	transmission	NOUN
wm117m03x1v	12	6	performance	performance	NOUN
wm117m03x1v	12	7	,	,	PUNCT
wm117m03x1v	12	8	tapered	taper	VERB
wm117m03x1v	12	9	nodules	nodule	NOUN
wm117m03x1v	12	10	,	,	PUNCT
wm117m03x1v	12	11	which	which	PRON
wm117m03x1v	12	12	provide	provide	VERB
wm117m03x1v	12	13	better	well	ADJ
wm117m03x1v	12	14	impedance	impedance	NOUN
wm117m03x1v	12	15	matching	matching	NOUN
wm117m03x1v	12	16	to	to	ADP
wm117m03x1v	12	17	on	on	ADP
wm117m03x1v	12	18	-	-	PUNCT
wm117m03x1v	12	19	chip	chip	NOUN
wm117m03x1v	12	20	interconnects	interconnect	NOUN
wm117m03x1v	12	21	,	,	PUNCT
wm117m03x1v	12	22	are	be	AUX
wm117m03x1v	12	23	designed	design	VERB
wm117m03x1v	12	24	and	and	CCONJ
wm117m03x1v	12	25	fabricated	fabricate	VERB
wm117m03x1v	12	26	.	.	PUNCT
wm117m03x1v	13	1	qp	qp	NOUN
wm117m03x1v	13	2	is	be	AUX
wm117m03x1v	13	3	a	a	DET
wm117m03x1v	13	4	novel	novel	ADJ
wm117m03x1v	13	5	packaging	packaging	NOUN
wm117m03x1v	13	6	technique	technique	NOUN
wm117m03x1v	13	7	for	for	ADP
wm117m03x1v	13	8	ultra	ultra	ADJ
wm117m03x1v	13	9	-	-	ADJ
wm117m03x1v	13	10	fast	fast	ADJ
wm117m03x1v	13	11	and	and	CCONJ
wm117m03x1v	13	12	low	low	ADJ
wm117m03x1v	13	13	-	-	PUNCT
wm117m03x1v	13	14	power	power	NOUN
wm117m03x1v	13	15	chip	chip	NOUN
wm117m03x1v	13	16	-	-	PUNCT
wm117m03x1v	13	17	to	to	ADP
wm117m03x1v	13	18	-	-	PUNCT
wm117m03x1v	13	19	chip	chip	NOUN
wm117m03x1v	13	20	communications	communication	NOUN
wm117m03x1v	13	21	.	.	PUNCT
wm117m03x1v	14	1	the	the	DET
wm117m03x1v	14	2	fabrication	fabrication	NOUN
wm117m03x1v	14	3	process	process	NOUN
wm117m03x1v	14	4	of	of	ADP
wm117m03x1v	14	5	qp	qp	NOUN
wm117m03x1v	14	6	can	can	AUX
wm117m03x1v	14	7	be	be	AUX
wm117m03x1v	14	8	easily	easily	ADV
wm117m03x1v	14	9	integrated	integrate	VERB
wm117m03x1v	14	10	into	into	ADP
wm117m03x1v	14	11	standard	standard	ADJ
wm117m03x1v	14	12	ic	ic	NOUN
wm117m03x1v	14	13	process	process	NOUN
wm117m03x1v	14	14	with	with	ADP
wm117m03x1v	14	15	an	an	DET
wm117m03x1v	14	16	extra	extra	ADJ
wm117m03x1v	14	17	two	two	NUM
wm117m03x1v	14	18	masks	mask	NOUN
wm117m03x1v	14	19	,	,	PUNCT
wm117m03x1v	14	20	one	one	NUM
wm117m03x1v	14	21	for	for	ADP
wm117m03x1v	14	22	the	the	DET
wm117m03x1v	14	23	nodules	nodule	NOUN
wm117m03x1v	14	24	and	and	CCONJ
wm117m03x1v	14	25	the	the	DET
wm117m03x1v	14	26	other	other	ADJ
wm117m03x1v	14	27	for	for	ADP
wm117m03x1v	14	28	the	the	DET
wm117m03x1v	14	29	separation	separation	NOUN
wm117m03x1v	14	30	of	of	ADP
wm117m03x1v	14	31	the	the	DET
wm117m03x1v	14	32	chips	chip	NOUN
wm117m03x1v	14	33	.	.	PUNCT
wm117m03x1v	15	1	the	the	DET
wm117m03x1v	15	2	system	system	NOUN
wm117m03x1v	15	3	performance	performance	NOUN
wm117m03x1v	15	4	by	by	ADP
wm117m03x1v	15	5	implementing	implement	VERB
wm117m03x1v	15	6	qp	qp	NOUN
wm117m03x1v	15	7	can	can	AUX
wm117m03x1v	15	8	be	be	AUX
wm117m03x1v	15	9	dramatically	dramatically	ADV
wm117m03x1v	15	10	improved	improve	VERB
wm117m03x1v	15	11	along	along	ADP
wm117m03x1v	15	12	with	with	ADP
wm117m03x1v	15	13	the	the	DET
wm117m03x1v	15	14	improvement	improvement	NOUN
wm117m03x1v	15	15	of	of	ADP
wm117m03x1v	15	16	the	the	DET
wm117m03x1v	15	17	ics	ics	NOUN
wm117m03x1v	15	18	trends	trend	NOUN