id	sid	tid	token	lemma	pos
vx021c2104k	1	1	this	this	DET
vx021c2104k	1	2	work	work	NOUN
vx021c2104k	1	3	describes	describe	VERB
vx021c2104k	1	4	the	the	DET
vx021c2104k	1	5	fabrication	fabrication	NOUN
vx021c2104k	1	6	of	of	ADP
vx021c2104k	1	7	single	single	ADJ
vx021c2104k	1	8	electron	electron	NOUN
vx021c2104k	1	9	transistors	transistor	NOUN
vx021c2104k	1	10	using	use	VERB
vx021c2104k	1	11	electron	electron	NOUN
vx021c2104k	1	12	beam	beam	NOUN
vx021c2104k	1	13	lithography	lithography	NOUN
vx021c2104k	1	14	and	and	CCONJ
vx021c2104k	1	15	atomic	atomic	ADJ
vx021c2104k	1	16	layer	layer	NOUN
vx021c2104k	1	17	deposition	deposition	NOUN
vx021c2104k	1	18	to	to	PART
vx021c2104k	1	19	form	form	VERB
vx021c2104k	1	20	nanoscale	nanoscale	PROPN
vx021c2104k	1	21	tunnel	tunnel	NOUN
vx021c2104k	1	22	transparent	transparent	ADJ
vx021c2104k	1	23	junctions	junction	NOUN
vx021c2104k	1	24	of	of	ADP
vx021c2104k	1	25	alumina	alumina	PROPN
vx021c2104k	1	26	(	(	PUNCT
vx021c2104k	1	27	al2o3	al2o3	PROPN
vx021c2104k	1	28	)	)	PUNCT
vx021c2104k	1	29	on	on	ADP
vx021c2104k	1	30	platinum	platinum	NOUN
vx021c2104k	1	31	nanowires	nanowire	NOUN
vx021c2104k	1	32	using	use	VERB
vx021c2104k	1	33	either	either	CCONJ
vx021c2104k	1	34	water	water	NOUN
vx021c2104k	1	35	or	or	CCONJ
vx021c2104k	1	36	ozone	ozone	NOUN
vx021c2104k	1	37	as	as	ADP
vx021c2104k	1	38	the	the	DET
vx021c2104k	1	39	oxygen	oxygen	NOUN
vx021c2104k	1	40	precursor	precursor	NOUN
vx021c2104k	1	41	and	and	CCONJ
vx021c2104k	1	42	trimethylaluminum	trimethylaluminum	ADJ
vx021c2104k	1	43	as	as	ADP
vx021c2104k	1	44	the	the	DET
vx021c2104k	1	45	aluminum	aluminum	NOUN
vx021c2104k	1	46	precursor	precursor	NOUN
vx021c2104k	1	47	.	.	PUNCT
vx021c2104k	2	1	using	use	VERB
vx021c2104k	2	2	room	room	NOUN
vx021c2104k	2	3	temperature	temperature	NOUN
vx021c2104k	2	4	,	,	PUNCT
vx021c2104k	2	5	low	low	ADJ
vx021c2104k	2	6	frequency	frequency	NOUN
vx021c2104k	2	7	conductance	conductance	NOUN
vx021c2104k	2	8	measurements	measurement	NOUN
vx021c2104k	2	9	between	between	ADP
vx021c2104k	2	10	the	the	DET
vx021c2104k	2	11	source	source	NOUN
vx021c2104k	2	12	and	and	CCONJ
vx021c2104k	2	13	drain	drain	NOUN
vx021c2104k	2	14	,	,	PUNCT
vx021c2104k	2	15	it	it	PRON
vx021c2104k	2	16	was	be	AUX
vx021c2104k	2	17	found	find	VERB
vx021c2104k	2	18	that	that	SCONJ
vx021c2104k	2	19	devices	device	NOUN
vx021c2104k	2	20	fabricated	fabricate	VERB
vx021c2104k	2	21	using	use	VERB
vx021c2104k	2	22	water	water	NOUN
vx021c2104k	2	23	had	have	VERB
vx021c2104k	2	24	higher	high	ADJ
vx021c2104k	2	25	conductance	conductance	NOUN
vx021c2104k	2	26	than	than	ADP
vx021c2104k	2	27	devices	device	NOUN
vx021c2104k	2	28	fabricated	fabricate	VERB
vx021c2104k	2	29	with	with	ADP
vx021c2104k	2	30	ozone	ozone	NOUN
vx021c2104k	2	31	.	.	PUNCT
vx021c2104k	3	1	subsequent	subsequent	ADJ
vx021c2104k	3	2	annealing	annealing	NOUN
vx021c2104k	3	3	caused	cause	VERB
vx021c2104k	3	4	both	both	PRON
vx021c2104k	3	5	waterand	waterand	PROPN
vx021c2104k	3	6	ozone	ozone	NOUN
vx021c2104k	3	7	-	-	PUNCT
vx021c2104k	3	8	based	base	VERB
vx021c2104k	3	9	devices	device	NOUN
vx021c2104k	3	10	to	to	PART
vx021c2104k	3	11	increase	increase	VERB
vx021c2104k	3	12	in	in	ADP
vx021c2104k	3	13	conductance	conductance	NOUN
vx021c2104k	3	14	by	by	ADP
vx021c2104k	3	15	more	more	ADJ
vx021c2104k	3	16	than	than	ADP
vx021c2104k	3	17	2	2	NUM
vx021c2104k	3	18	orders	order	NOUN
vx021c2104k	3	19	of	of	ADP
vx021c2104k	3	20	magnitude	magnitude	NOUN
vx021c2104k	3	21	.	.	PUNCT
vx021c2104k	4	1	furthermore	furthermore	ADV
vx021c2104k	4	2	,	,	PUNCT
vx021c2104k	4	3	comparison	comparison	NOUN
vx021c2104k	4	4	of	of	ADP
vx021c2104k	4	5	devices	device	NOUN
vx021c2104k	4	6	at	at	ADP
vx021c2104k	4	7	low	low	ADJ
vx021c2104k	4	8	temperatures	temperature	NOUN
vx021c2104k	4	9	(	(	PUNCT
vx021c2104k	4	10	~4	~4	PROPN
vx021c2104k	4	11	k	k	X
vx021c2104k	4	12	)	)	PUNCT
vx021c2104k	4	13	showed	show	VERB
vx021c2104k	4	14	that	that	SCONJ
vx021c2104k	4	15	annealed	anneal	VERB
vx021c2104k	4	16	devices	device	NOUN
vx021c2104k	4	17	displayed	display	VERB
vx021c2104k	4	18	much	much	ADV
vx021c2104k	4	19	closer	close	ADJ
vx021c2104k	4	20	to	to	ADP
vx021c2104k	4	21	the	the	DET
vx021c2104k	4	22	ideal	ideal	ADJ
vx021c2104k	4	23	behavior	behavior	NOUN
vx021c2104k	4	24	(	(	PUNCT
vx021c2104k	4	25	i.e.	i.e.	X
vx021c2104k	4	26	,	,	PUNCT
vx021c2104k	4	27	constant	constant	ADJ
vx021c2104k	4	28	differential	differential	ADJ
vx021c2104k	4	29	conductance	conductance	NOUN
vx021c2104k	4	30	)	)	PUNCT
vx021c2104k	4	31	outside	outside	ADP
vx021c2104k	4	32	of	of	ADP
vx021c2104k	4	33	the	the	DET
vx021c2104k	4	34	coulomb	coulomb	NOUN
vx021c2104k	4	35	blockade	blockade	NOUN
vx021c2104k	4	36	region	region	NOUN
vx021c2104k	4	37	and	and	CCONJ
vx021c2104k	4	38	that	that	SCONJ
vx021c2104k	4	39	untreated	untreated	ADJ
vx021c2104k	4	40	devices	device	NOUN
vx021c2104k	4	41	showed	show	VERB
vx021c2104k	4	42	nonlinear	nonlinear	ADJ
vx021c2104k	4	43	behavior	behavior	NOUN
vx021c2104k	4	44	outside	outside	ADP
vx021c2104k	4	45	of	of	ADP
vx021c2104k	4	46	the	the	DET
vx021c2104k	4	47	coulomb	coulomb	NOUN
vx021c2104k	4	48	blockade	blockade	NOUN
vx021c2104k	4	49	region	region	NOUN
vx021c2104k	4	50	(	(	PUNCT
vx021c2104k	4	51	i.e.	i.e.	X
vx021c2104k	4	52	,	,	PUNCT
vx021c2104k	4	53	an	an	DET
vx021c2104k	4	54	increase	increase	NOUN
vx021c2104k	4	55	in	in	ADP
vx021c2104k	4	56	differential	differential	ADJ
vx021c2104k	4	57	conductance	conductance	NOUN
vx021c2104k	4	58	with	with	ADP
vx021c2104k	4	59	source	source	NOUN
vx021c2104k	4	60	-	-	PUNCT
vx021c2104k	4	61	drain	drain	NOUN
vx021c2104k	4	62	voltage	voltage	NOUN
vx021c2104k	4	63	bias	bias	NOUN
vx021c2104k	4	64	)	)	PUNCT
vx021c2104k	4	65	.	.	PUNCT
vx021c2104k	5	1	transmission	transmission	NOUN
vx021c2104k	5	2	electron	electron	NOUN
vx021c2104k	5	3	microscopy	microscopy	NOUN
vx021c2104k	5	4	cross	cross	ADJ
vx021c2104k	5	5	-	-	ADJ
vx021c2104k	5	6	sectional	sectional	ADJ
vx021c2104k	5	7	images	image	NOUN
vx021c2104k	5	8	showed	show	VERB
vx021c2104k	5	9	that	that	SCONJ
vx021c2104k	5	10	annealing	annealing	NOUN
vx021c2104k	5	11	did	do	AUX
vx021c2104k	5	12	not	not	PART
vx021c2104k	5	13	significantly	significantly	ADV
vx021c2104k	5	14	change	change	VERB
vx021c2104k	5	15	device	device	NOUN
vx021c2104k	5	16	geometry	geometry	NOUN
vx021c2104k	5	17	,	,	PUNCT
vx021c2104k	5	18	but	but	CCONJ
vx021c2104k	5	19	energy	energy	NOUN
vx021c2104k	5	20	dispersive	dispersive	NOUN
vx021c2104k	5	21	x	x	NOUN
vx021c2104k	5	22	-	-	NOUN
vx021c2104k	5	23	ray	ray	NOUN
vx021c2104k	5	24	spectroscopy	spectroscopy	NOUN
vx021c2104k	5	25	showed	show	VERB
vx021c2104k	5	26	an	an	DET
vx021c2104k	5	27	unusually	unusually	ADV
vx021c2104k	5	28	large	large	ADJ
vx021c2104k	5	29	amount	amount	NOUN
vx021c2104k	5	30	of	of	ADP
vx021c2104k	5	31	oxygen	oxygen	NOUN
vx021c2104k	5	32	in	in	ADP
vx021c2104k	5	33	the	the	DET
vx021c2104k	5	34	bottom	bottom	ADJ
vx021c2104k	5	35	platinum	platinum	NOUN
vx021c2104k	5	36	layer	layer	NOUN
vx021c2104k	5	37	.	.	PUNCT
vx021c2104k	6	1	this	this	PRON
vx021c2104k	6	2	suggests	suggest	VERB
vx021c2104k	6	3	that	that	SCONJ
vx021c2104k	6	4	the	the	DET
vx021c2104k	6	5	atomic	atomic	ADJ
vx021c2104k	6	6	layer	layer	NOUN
vx021c2104k	6	7	deposition	deposition	NOUN
vx021c2104k	6	8	process	process	NOUN
vx021c2104k	6	9	results	result	NOUN
vx021c2104k	6	10	in	in	ADP
vx021c2104k	6	11	the	the	DET
vx021c2104k	6	12	formation	formation	NOUN
vx021c2104k	6	13	of	of	ADP
vx021c2104k	6	14	a	a	DET
vx021c2104k	6	15	thin	thin	ADJ
vx021c2104k	6	16	platinum	platinum	NOUN
vx021c2104k	6	17	surface	surface	NOUN
vx021c2104k	6	18	oxide	oxide	NOUN
vx021c2104k	6	19	,	,	PUNCT
vx021c2104k	6	20	which	which	PRON
vx021c2104k	6	21	either	either	CCONJ
vx021c2104k	6	22	decomposes	decompose	VERB
vx021c2104k	6	23	or	or	CCONJ
vx021c2104k	6	24	is	be	AUX
vx021c2104k	6	25	reduced	reduce	VERB
vx021c2104k	6	26	during	during	ADP
vx021c2104k	6	27	the	the	DET
vx021c2104k	6	28	anneal	anneal	ADJ
vx021c2104k	6	29	step	step	NOUN
vx021c2104k	6	30	,	,	PUNCT
vx021c2104k	6	31	resulting	result	VERB
vx021c2104k	6	32	in	in	ADP
vx021c2104k	6	33	a	a	DET
vx021c2104k	6	34	tunnel	tunnel	NOUN
vx021c2104k	6	35	barrier	barrier	NOUN
vx021c2104k	6	36	without	without	ADP
vx021c2104k	6	37	the	the	DET
vx021c2104k	6	38	in	in	ADP
vx021c2104k	6	39	-	-	PUNCT
vx021c2104k	6	40	series	series	NOUN
vx021c2104k	6	41	native	native	ADJ
vx021c2104k	6	42	oxide	oxide	NOUN
vx021c2104k	6	43	contribution	contribution	NOUN
vx021c2104k	6	44	.	.	PUNCT
vx021c2104k	7	1	furthermore	furthermore	ADV
vx021c2104k	7	2	,	,	PUNCT
vx021c2104k	7	3	the	the	DET
vx021c2104k	7	4	difference	difference	NOUN
vx021c2104k	7	5	between	between	ADP
vx021c2104k	7	6	ozoneand	ozoneand	PROPN
vx021c2104k	7	7	water	water	NOUN
vx021c2104k	7	8	-	-	PUNCT
vx021c2104k	7	9	based	base	VERB
vx021c2104k	7	10	devices	device	NOUN
vx021c2104k	7	11	suggests	suggest	VERB
vx021c2104k	7	12	that	that	SCONJ
vx021c2104k	7	13	ozone	ozone	NOUN
vx021c2104k	7	14	promotes	promote	VERB
vx021c2104k	7	15	atomic	atomic	ADJ
vx021c2104k	7	16	layer	layer	NOUN
vx021c2104k	7	17	deposition	deposition	NOUN
vx021c2104k	7	18	nucleation	nucleation	NOUN
vx021c2104k	7	19	by	by	ADP
vx021c2104k	7	20	oxidizing	oxidize	VERB
vx021c2104k	7	21	the	the	DET
vx021c2104k	7	22	surface	surface	NOUN
vx021c2104k	7	23	but	but	CCONJ
vx021c2104k	7	24	that	that	SCONJ
vx021c2104k	7	25	water	water	NOUN
vx021c2104k	7	26	relies	rely	VERB
vx021c2104k	7	27	on	on	ADP
vx021c2104k	7	28	physisorption	physisorption	NOUN
vx021c2104k	7	29	of	of	ADP
vx021c2104k	7	30	the	the	DET
vx021c2104k	7	31	precursors	precursor	NOUN
vx021c2104k	7	32	.	.	PUNCT
vx021c2104k	8	1	to	to	PART
vx021c2104k	8	2	test	test	VERB
vx021c2104k	8	3	this	this	DET
vx021c2104k	8	4	theory	theory	NOUN
vx021c2104k	8	5	,	,	PUNCT
vx021c2104k	8	6	devices	device	NOUN
vx021c2104k	8	7	were	be	AUX
vx021c2104k	8	8	exposed	expose	VERB
vx021c2104k	8	9	to	to	ADP
vx021c2104k	8	10	forming	form	VERB
vx021c2104k	8	11	gas	gas	NOUN
vx021c2104k	8	12	at	at	ADP
vx021c2104k	8	13	room	room	NOUN
vx021c2104k	8	14	temperature	temperature	NOUN
vx021c2104k	8	15	,	,	PUNCT
vx021c2104k	8	16	which	which	PRON
vx021c2104k	8	17	also	also	ADV
vx021c2104k	8	18	reduces	reduce	VERB
vx021c2104k	8	19	platinum	platinum	NOUN
vx021c2104k	8	20	oxide	oxide	NOUN
vx021c2104k	8	21	,	,	PUNCT
vx021c2104k	8	22	and	and	CCONJ
vx021c2104k	8	23	a	a	DET
vx021c2104k	8	24	decrease	decrease	NOUN
vx021c2104k	8	25	in	in	ADP
vx021c2104k	8	26	resistance	resistance	NOUN
vx021c2104k	8	27	was	be	AUX
vx021c2104k	8	28	observed	observe	VERB
vx021c2104k	8	29	,	,	PUNCT
vx021c2104k	8	30	as	as	SCONJ
vx021c2104k	8	31	expected	expect	VERB
vx021c2104k	8	32	.	.	PUNCT