id	sid	tid	token	lemma	pos
vm40xp71306	1	1	in	in	ADP
vm40xp71306	1	2	recent	recent	ADJ
vm40xp71306	1	3	years	year	NOUN
vm40xp71306	1	4	,	,	PUNCT
vm40xp71306	1	5	the	the	DET
vm40xp71306	1	6	tunnel	tunnel	NOUN
vm40xp71306	1	7	diode	diode	NOUN
vm40xp71306	1	8	has	have	AUX
vm40xp71306	1	9	attracted	attract	VERB
vm40xp71306	1	10	interest	interest	NOUN
vm40xp71306	1	11	from	from	ADP
vm40xp71306	1	12	companies	company	NOUN
vm40xp71306	1	13	and	and	CCONJ
vm40xp71306	1	14	researchers	researcher	NOUN
vm40xp71306	1	15	.	.	PUNCT
vm40xp71306	2	1	integrating	integrate	VERB
vm40xp71306	2	2	tunnel	tunnel	NOUN
vm40xp71306	2	3	diodes	diode	NOUN
vm40xp71306	2	4	with	with	ADP
vm40xp71306	2	5	transistors	transistor	NOUN
vm40xp71306	2	6	provide	provide	VERB
vm40xp71306	2	7	input	input	NOUN
vm40xp71306	2	8	-	-	PUNCT
vm40xp71306	2	9	out	out	ADP
vm40xp71306	2	10	isolation	isolation	NOUN
vm40xp71306	2	11	,	,	PUNCT
vm40xp71306	2	12	gain	gain	NOUN
vm40xp71306	2	13	and	and	CCONJ
vm40xp71306	2	14	fan	fan	NOUN
vm40xp71306	2	15	-	-	PUNCT
vm40xp71306	2	16	out	out	ADP
vm40xp71306	2	17	ability	ability	NOUN
vm40xp71306	2	18	which	which	PRON
vm40xp71306	2	19	the	the	DET
vm40xp71306	2	20	tunnel	tunnel	NOUN
vm40xp71306	2	21	diode	diode	NOUN
vm40xp71306	2	22	by	by	ADP
vm40xp71306	2	23	itself	itself	PRON
vm40xp71306	2	24	lacks	lack	VERB
vm40xp71306	2	25	.	.	PUNCT
vm40xp71306	3	1	the	the	DET
vm40xp71306	3	2	sparsity	sparsity	NOUN
vm40xp71306	3	3	of	of	ADP
vm40xp71306	3	4	tunnel	tunnel	NOUN
vm40xp71306	3	5	diode	diode	NOUN
vm40xp71306	3	6	fabrication	fabrication	NOUN
vm40xp71306	3	7	processes	process	NOUN
vm40xp71306	3	8	compatible	compatible	ADJ
vm40xp71306	3	9	with	with	ADP
vm40xp71306	3	10	transistor	transistor	NOUN
vm40xp71306	3	11	processing	processing	NOUN
vm40xp71306	3	12	hinders	hinder	VERB
vm40xp71306	3	13	the	the	DET
vm40xp71306	3	14	wider	wide	ADJ
vm40xp71306	3	15	use	use	NOUN
vm40xp71306	3	16	of	of	ADP
vm40xp71306	3	17	the	the	DET
vm40xp71306	3	18	device	device	NOUN
vm40xp71306	3	19	.	.	PUNCT
vm40xp71306	4	1	fabrication	fabrication	NOUN
vm40xp71306	4	2	processes	process	NOUN
vm40xp71306	4	3	,	,	PUNCT
vm40xp71306	4	4	which	which	PRON
vm40xp71306	4	5	could	could	AUX
vm40xp71306	4	6	be	be	AUX
vm40xp71306	4	7	applied	apply	VERB
vm40xp71306	4	8	to	to	ADP
vm40xp71306	4	9	integrated	integrate	VERB
vm40xp71306	4	10	tunnel	tunnel	NOUN
vm40xp71306	4	11	diode	diode	NOUN
vm40xp71306	4	12	/	/	SYM
vm40xp71306	4	13	transistor	transistor	NOUN
vm40xp71306	4	14	circuits	circuit	NOUN
vm40xp71306	4	15	on	on	ADP
vm40xp71306	4	16	si	si	PROPN
vm40xp71306	4	17	and	and	CCONJ
vm40xp71306	4	18	ge	ge	PROPN
vm40xp71306	4	19	,	,	PUNCT
vm40xp71306	4	20	are	be	AUX
vm40xp71306	4	21	explored	explore	VERB
vm40xp71306	4	22	in	in	ADP
vm40xp71306	4	23	this	this	DET
vm40xp71306	4	24	work	work	NOUN
vm40xp71306	4	25	.	.	PUNCT
vm40xp71306	5	1	silicon	silicon	NOUN
vm40xp71306	5	2	tunnel	tunnel	NOUN
vm40xp71306	5	3	diodes	diode	NOUN
vm40xp71306	5	4	were	be	AUX
vm40xp71306	5	5	demonstrated	demonstrate	VERB
vm40xp71306	5	6	in	in	ADP
vm40xp71306	5	7	both	both	PRON
vm40xp71306	5	8	vertical	vertical	ADJ
vm40xp71306	5	9	and	and	CCONJ
vm40xp71306	5	10	lateral	lateral	ADJ
vm40xp71306	5	11	geometries	geometry	NOUN
vm40xp71306	5	12	using	use	VERB
vm40xp71306	5	13	spin	spin	NOUN
vm40xp71306	5	14	-	-	PUNCT
vm40xp71306	5	15	on	on	ADP
vm40xp71306	5	16	diffusants	diffusant	NOUN
vm40xp71306	5	17	and	and	CCONJ
vm40xp71306	5	18	rapid	rapid	ADJ
vm40xp71306	5	19	thermal	thermal	ADJ
vm40xp71306	5	20	processing	processing	NOUN
vm40xp71306	5	21	.	.	PUNCT
vm40xp71306	6	1	silicon	silicon	PROPN
vm40xp71306	6	2	tunnel	tunnel	NOUN
vm40xp71306	6	3	diodes	diode	NOUN
vm40xp71306	6	4	were	be	AUX
vm40xp71306	6	5	first	first	ADV
vm40xp71306	6	6	formed	form	VERB
vm40xp71306	6	7	in	in	ADP
vm40xp71306	6	8	the	the	DET
vm40xp71306	6	9	substrate	substrate	NOUN
vm40xp71306	6	10	plane	plane	NOUN
vm40xp71306	6	11	through	through	ADP
vm40xp71306	6	12	an	an	DET
vm40xp71306	6	13	oxide	oxide	NOUN
vm40xp71306	6	14	window	window	NOUN
vm40xp71306	6	15	process	process	NOUN
vm40xp71306	6	16	,	,	PUNCT
vm40xp71306	6	17	with	with	ADP
vm40xp71306	6	18	peak	peak	ADJ
vm40xp71306	6	19	current	current	ADJ
vm40xp71306	6	20	densities	density	NOUN
vm40xp71306	6	21	of	of	ADP
vm40xp71306	6	22	approximately	approximately	ADV
vm40xp71306	6	23	1μa	1μa	NUM
vm40xp71306	6	24	/	/	SYM
vm40xp71306	6	25	ìâm2	ìâm2	NOUN
vm40xp71306	6	26	and	and	CCONJ
vm40xp71306	6	27	peak	peak	NOUN
vm40xp71306	6	28	-	-	PUNCT
vm40xp71306	6	29	to	to	ADP
vm40xp71306	6	30	-	-	PUNCT
vm40xp71306	6	31	valley	valley	NOUN
vm40xp71306	6	32	ratio	ratio	NOUN
vm40xp71306	6	33	of	of	ADP
vm40xp71306	6	34	approximately	approximately	ADV
vm40xp71306	6	35	1.3	1.3	NUM
vm40xp71306	6	36	.	.	PUNCT
vm40xp71306	7	1	a	a	DET
vm40xp71306	7	2	self	self	NOUN
vm40xp71306	7	3	-	-	PUNCT
vm40xp71306	7	4	aligned	align	VERB
vm40xp71306	7	5	lateral	lateral	ADJ
vm40xp71306	7	6	fabrication	fabrication	NOUN
vm40xp71306	7	7	process	process	NOUN
vm40xp71306	7	8	,	,	PUNCT
vm40xp71306	7	9	which	which	PRON
vm40xp71306	7	10	forms	form	VERB
vm40xp71306	7	11	the	the	DET
vm40xp71306	7	12	junction	junction	NOUN
vm40xp71306	7	13	perpendicular	perpendicular	ADJ
vm40xp71306	7	14	to	to	ADP
vm40xp71306	7	15	the	the	DET
vm40xp71306	7	16	substrate	substrate	NOUN
vm40xp71306	7	17	plane	plane	NOUN
vm40xp71306	7	18	,	,	PUNCT
vm40xp71306	7	19	has	have	AUX
vm40xp71306	7	20	also	also	ADV
vm40xp71306	7	21	been	be	AUX
vm40xp71306	7	22	successfully	successfully	ADV
vm40xp71306	7	23	developed	develop	VERB
vm40xp71306	7	24	and	and	CCONJ
vm40xp71306	7	25	yielded	yield	VERB
vm40xp71306	7	26	backward	backward	ADJ
vm40xp71306	7	27	si	si	PROPN
vm40xp71306	7	28	tunnel	tunnel	NOUN
vm40xp71306	7	29	diodes	diode	NOUN
vm40xp71306	7	30	with	with	ADP
vm40xp71306	7	31	peak	peak	ADJ
vm40xp71306	7	32	current	current	ADJ
vm40xp71306	7	33	densities	density	NOUN
vm40xp71306	7	34	of	of	ADP
vm40xp71306	7	35	30	30	NUM
vm40xp71306	7	36	na	na	NOUN
vm40xp71306	7	37	/	/	SYM
vm40xp71306	7	38	ìâm2	ìâm2	NOUN
vm40xp71306	7	39	.	.	PUNCT
vm40xp71306	8	1	to	to	ADP
vm40xp71306	8	2	the	the	DET
vm40xp71306	8	3	author	author	NOUN
vm40xp71306	8	4	's	's	PART
vm40xp71306	8	5	knowledge	knowledge	NOUN
vm40xp71306	8	6	,	,	PUNCT
vm40xp71306	8	7	these	these	DET
vm40xp71306	8	8	accomplishments	accomplishment	NOUN
vm40xp71306	8	9	are	be	AUX
vm40xp71306	8	10	the	the	DET
vm40xp71306	8	11	first	first	ADJ
vm40xp71306	8	12	demonstration	demonstration	NOUN
vm40xp71306	8	13	of	of	ADP
vm40xp71306	8	14	lateral	lateral	ADJ
vm40xp71306	8	15	si	si	PROPN
vm40xp71306	8	16	tunnel	tunnel	NOUN
vm40xp71306	8	17	diodes	diode	NOUN
vm40xp71306	8	18	using	use	VERB
vm40xp71306	8	19	spin	spin	NOUN
vm40xp71306	8	20	-	-	PUNCT
vm40xp71306	8	21	on	on	ADP
vm40xp71306	8	22	diffusants	diffusant	NOUN
vm40xp71306	8	23	and	and	CCONJ
vm40xp71306	8	24	rapid	rapid	ADJ
vm40xp71306	8	25	thermal	thermal	ADJ
vm40xp71306	8	26	processing	processing	NOUN
vm40xp71306	8	27	.	.	PUNCT
vm40xp71306	9	1	low	low	ADJ
vm40xp71306	9	2	current	current	ADJ
vm40xp71306	9	3	density	density	NOUN
vm40xp71306	9	4	tunnel	tunnel	NOUN
vm40xp71306	9	5	diodes	diode	NOUN
vm40xp71306	9	6	can	can	AUX
vm40xp71306	9	7	find	find	VERB
vm40xp71306	9	8	applications	application	NOUN
vm40xp71306	9	9	as	as	ADP
vm40xp71306	9	10	zero	zero	NUM
vm40xp71306	9	11	biased	biased	ADJ
vm40xp71306	9	12	detector	detector	NOUN
vm40xp71306	9	13	.	.	PUNCT
vm40xp71306	10	1	germanium	germanium	NOUN
vm40xp71306	10	2	tunnel	tunnel	NOUN
vm40xp71306	10	3	diodes	diode	NOUN
vm40xp71306	10	4	were	be	AUX
vm40xp71306	10	5	demonstrated	demonstrate	VERB
vm40xp71306	10	6	both	both	CCONJ
vm40xp71306	10	7	using	use	VERB
vm40xp71306	10	8	a	a	DET
vm40xp71306	10	9	diffusion	diffusion	NOUN
vm40xp71306	10	10	-	-	PUNCT
vm40xp71306	10	11	based	base	VERB
vm40xp71306	10	12	approach	approach	NOUN
vm40xp71306	10	13	and	and	CCONJ
vm40xp71306	10	14	an	an	DET
vm40xp71306	10	15	on	on	ADP
vm40xp71306	10	16	-	-	PUNCT
vm40xp71306	10	17	wafer	wafer	NOUN
vm40xp71306	10	18	liquid	liquid	NOUN
vm40xp71306	10	19	-	-	PUNCT
vm40xp71306	10	20	phase	phase	NOUN
vm40xp71306	10	21	regrowth	regrowth	NOUN
vm40xp71306	10	22	approach	approach	NOUN
vm40xp71306	10	23	.	.	PUNCT
vm40xp71306	11	1	the	the	DET
vm40xp71306	11	2	diffusion	diffusion	NOUN
vm40xp71306	11	3	-	-	PUNCT
vm40xp71306	11	4	based	base	VERB
vm40xp71306	11	5	approach	approach	NOUN
vm40xp71306	11	6	utilized	utilize	VERB
vm40xp71306	11	7	spin	spin	NOUN
vm40xp71306	11	8	-	-	PUNCT
vm40xp71306	11	9	on	on	ADP
vm40xp71306	11	10	diffusants	diffusant	NOUN
vm40xp71306	11	11	and	and	CCONJ
vm40xp71306	11	12	rapid	rapid	ADJ
vm40xp71306	11	13	thermal	thermal	ADJ
vm40xp71306	11	14	processing	processing	NOUN
vm40xp71306	11	15	.	.	PUNCT
vm40xp71306	12	1	germanium	germanium	NOUN
vm40xp71306	12	2	tunnel	tunnel	NOUN
vm40xp71306	12	3	diodes	diode	NOUN
vm40xp71306	12	4	with	with	ADP
vm40xp71306	12	5	current	current	ADJ
vm40xp71306	12	6	densities	density	NOUN
vm40xp71306	12	7	up	up	ADP
vm40xp71306	12	8	to	to	ADP
vm40xp71306	12	9	0.6	0.6	NUM
vm40xp71306	12	10	na	na	PART
vm40xp71306	12	11	/	/	SYM
vm40xp71306	12	12	ìâ2	ìâ2	NUM
vm40xp71306	12	13	and	and	CCONJ
vm40xp71306	12	14	pvr	pvr	NOUN
vm40xp71306	12	15	of	of	ADP
vm40xp71306	12	16	1.1	1.1	NUM
vm40xp71306	12	17	were	be	AUX
vm40xp71306	12	18	demonstrated	demonstrate	VERB
vm40xp71306	12	19	for	for	ADP
vm40xp71306	12	20	the	the	DET
vm40xp71306	12	21	first	first	ADJ
vm40xp71306	12	22	time	time	NOUN
vm40xp71306	12	23	using	use	VERB
vm40xp71306	12	24	this	this	DET
vm40xp71306	12	25	approach	approach	NOUN
vm40xp71306	12	26	.	.	PUNCT
vm40xp71306	13	1	an	an	DET
vm40xp71306	13	2	on	on	ADP
vm40xp71306	13	3	-	-	PUNCT
vm40xp71306	13	4	wafer	wafer	NOUN
vm40xp71306	13	5	liquid	liquid	NOUN
vm40xp71306	13	6	-	-	PUNCT
vm40xp71306	13	7	phase	phase	NOUN
vm40xp71306	13	8	regrowth	regrowth	NOUN
vm40xp71306	13	9	approach	approach	NOUN
vm40xp71306	13	10	with	with	ADP
vm40xp71306	13	11	a	a	DET
vm40xp71306	13	12	silicon	silicon	NOUN
vm40xp71306	13	13	nitride	nitride	PROPN
vm40xp71306	13	14	microcrucible	microcrucible	PROPN
vm40xp71306	13	15	was	be	AUX
vm40xp71306	13	16	developed	develop	VERB
vm40xp71306	13	17	.	.	PUNCT
vm40xp71306	14	1	germanium	germanium	NOUN
vm40xp71306	14	2	tds	tds	NUM
vm40xp71306	14	3	with	with	ADP
vm40xp71306	14	4	current	current	ADJ
vm40xp71306	14	5	densities	density	NOUN
vm40xp71306	14	6	up	up	ADP
vm40xp71306	14	7	to	to	ADP
vm40xp71306	14	8	1.2	1.2	NUM
vm40xp71306	14	9	ma	ma	PROPN
vm40xp71306	14	10	/	/	SYM
vm40xp71306	14	11	ìâm2	ìâm2	PROPN
vm40xp71306	14	12	were	be	AUX
vm40xp71306	14	13	demonstrated	demonstrate	VERB
vm40xp71306	14	14	.	.	PUNCT
vm40xp71306	15	1	a	a	DET
vm40xp71306	15	2	primary	primary	ADJ
vm40xp71306	15	3	goal	goal	NOUN
vm40xp71306	15	4	of	of	ADP
vm40xp71306	15	5	this	this	DET
vm40xp71306	15	6	project	project	NOUN
vm40xp71306	15	7	,	,	PUNCT
vm40xp71306	15	8	demonstration	demonstration	NOUN
vm40xp71306	15	9	of	of	ADP
vm40xp71306	15	10	a	a	DET
vm40xp71306	15	11	1	1	NUM
vm40xp71306	15	12	ma	ma	PROPN
vm40xp71306	15	13	/	/	PUNCT
vm40xp71306	15	14	ìâm2	ìâm2	PROPN
vm40xp71306	15	15	tunnel	tunnel	NOUN
vm40xp71306	15	16	junction	junction	NOUN
vm40xp71306	15	17	,	,	PUNCT
vm40xp71306	15	18	was	be	AUX
vm40xp71306	15	19	fulfilled	fulfil	VERB
vm40xp71306	15	20	.	.	PUNCT