id	sid	tid	token	lemma	pos
vh53ws88h47	1	1	two	two	NUM
vh53ws88h47	1	2	-	-	PUNCT
vh53ws88h47	1	3	dimensional	dimensional	ADJ
vh53ws88h47	1	4	(	(	PUNCT
vh53ws88h47	1	5	2d	2d	NOUN
vh53ws88h47	1	6	)	)	PUNCT
vh53ws88h47	1	7	materials	material	NOUN
vh53ws88h47	1	8	,	,	PUNCT
vh53ws88h47	1	9	particularly	particularly	ADV
vh53ws88h47	1	10	graphene	graphene	NOUN
vh53ws88h47	1	11	and	and	CCONJ
vh53ws88h47	1	12	transition	transition	NOUN
vh53ws88h47	1	13	metal	metal	NOUN
vh53ws88h47	1	14	dichalcogenides	dichalcogenide	NOUN
vh53ws88h47	1	15	(	(	PUNCT
vh53ws88h47	1	16	tmds	tmds	NOUN
vh53ws88h47	1	17	)	)	PUNCT
vh53ws88h47	1	18	,	,	PUNCT
vh53ws88h47	1	19	have	have	AUX
vh53ws88h47	1	20	been	be	AUX
vh53ws88h47	1	21	the	the	DET
vh53ws88h47	1	22	subject	subject	NOUN
vh53ws88h47	1	23	of	of	ADP
vh53ws88h47	1	24	many	many	ADJ
vh53ws88h47	1	25	recent	recent	ADJ
vh53ws88h47	1	26	studies	study	NOUN
vh53ws88h47	1	27	because	because	SCONJ
vh53ws88h47	1	28	of	of	ADP
vh53ws88h47	1	29	their	their	PRON
vh53ws88h47	1	30	unique	unique	ADJ
vh53ws88h47	1	31	mechanical	mechanical	ADJ
vh53ws88h47	1	32	and	and	CCONJ
vh53ws88h47	1	33	electrical	electrical	ADJ
vh53ws88h47	1	34	properties	property	NOUN
vh53ws88h47	1	35	.	.	PUNCT
vh53ws88h47	2	1	all	all	DET
vh53ws88h47	2	2	the	the	DET
vh53ws88h47	2	3	bonds	bond	NOUN
vh53ws88h47	2	4	are	be	AUX
vh53ws88h47	2	5	in	in	ADP
vh53ws88h47	2	6	-	-	PUNCT
vh53ws88h47	2	7	plane	plane	NOUN
vh53ws88h47	2	8	,	,	PUNCT
vh53ws88h47	2	9	and	and	CCONJ
vh53ws88h47	2	10	the	the	DET
vh53ws88h47	2	11	layers	layer	NOUN
vh53ws88h47	2	12	are	be	AUX
vh53ws88h47	2	13	separated	separate	VERB
vh53ws88h47	2	14	by	by	ADP
vh53ws88h47	2	15	a	a	DET
vh53ws88h47	2	16	van	van	PROPN
vh53ws88h47	2	17	der	der	ADJ
vh53ws88h47	2	18	waals	waal	NOUN
vh53ws88h47	2	19	gap	gap	NOUN
vh53ws88h47	2	20	.	.	PUNCT
vh53ws88h47	3	1	while	while	SCONJ
vh53ws88h47	3	2	most	most	ADJ
vh53ws88h47	3	3	properties	property	NOUN
vh53ws88h47	3	4	can	can	AUX
vh53ws88h47	3	5	be	be	AUX
vh53ws88h47	3	6	characterized	characterize	VERB
vh53ws88h47	3	7	by	by	ADP
vh53ws88h47	3	8	measuring	measure	VERB
vh53ws88h47	3	9	the	the	DET
vh53ws88h47	3	10	unmodified	unmodified	ADJ
vh53ws88h47	3	11	materials	material	NOUN
vh53ws88h47	3	12	,	,	PUNCT
vh53ws88h47	3	13	many	many	ADJ
vh53ws88h47	3	14	electrical	electrical	ADJ
vh53ws88h47	3	15	properties	property	NOUN
vh53ws88h47	3	16	require	require	VERB
vh53ws88h47	3	17	the	the	DET
vh53ws88h47	3	18	charge	charge	NOUN
vh53ws88h47	3	19	state	state	NOUN
vh53ws88h47	3	20	of	of	ADP
vh53ws88h47	3	21	the	the	DET
vh53ws88h47	3	22	material	material	NOUN
vh53ws88h47	3	23	to	to	PART
vh53ws88h47	3	24	be	be	AUX
vh53ws88h47	3	25	modulated	modulate	VERB
vh53ws88h47	3	26	.	.	PUNCT
vh53ws88h47	4	1	for	for	ADP
vh53ws88h47	4	2	traditional	traditional	ADJ
vh53ws88h47	4	3	semiconductors	semiconductor	NOUN
vh53ws88h47	4	4	,	,	PUNCT
vh53ws88h47	4	5	this	this	PRON
vh53ws88h47	4	6	is	be	AUX
vh53ws88h47	4	7	achieved	achieve	VERB
vh53ws88h47	4	8	by	by	ADP
vh53ws88h47	4	9	field	field	NOUN
vh53ws88h47	4	10	-	-	PUNCT
vh53ws88h47	4	11	effect	effect	NOUN
vh53ws88h47	4	12	gating	gate	VERB
vh53ws88h47	4	13	through	through	ADP
vh53ws88h47	4	14	a	a	DET
vh53ws88h47	4	15	dielectric	dielectric	NOUN
vh53ws88h47	4	16	combined	combine	VERB
vh53ws88h47	4	17	with	with	ADP
vh53ws88h47	4	18	substitutional	substitutional	ADJ
vh53ws88h47	4	19	doping	doping	NOUN
vh53ws88h47	4	20	.	.	PUNCT
vh53ws88h47	5	1	however	however	ADV
vh53ws88h47	5	2	,	,	PUNCT
vh53ws88h47	5	3	the	the	DET
vh53ws88h47	5	4	lack	lack	NOUN
vh53ws88h47	5	5	of	of	ADP
vh53ws88h47	5	6	dangling	dangle	VERB
vh53ws88h47	5	7	surface	surface	NOUN
vh53ws88h47	5	8	bonds	bond	NOUN
vh53ws88h47	5	9	makes	make	VERB
vh53ws88h47	5	10	the	the	DET
vh53ws88h47	5	11	deposition	deposition	NOUN
vh53ws88h47	5	12	of	of	ADP
vh53ws88h47	5	13	a	a	DET
vh53ws88h47	5	14	gate	gate	NOUN
vh53ws88h47	5	15	dielectric	dielectric	NOUN
vh53ws88h47	5	16	challenging	challenging	ADJ
vh53ws88h47	5	17	,	,	PUNCT
vh53ws88h47	5	18	and	and	CCONJ
vh53ws88h47	5	19	methods	method	NOUN
vh53ws88h47	5	20	for	for	ADP
vh53ws88h47	5	21	controlled	control	VERB
vh53ws88h47	5	22	substitutional	substitutional	ADJ
vh53ws88h47	5	23	doping	doping	NOUN
vh53ws88h47	5	24	have	have	AUX
vh53ws88h47	5	25	not	not	PART
vh53ws88h47	5	26	yet	yet	ADV
vh53ws88h47	5	27	been	be	AUX
vh53ws88h47	5	28	developed	develop	VERB
vh53ws88h47	5	29	.	.	PUNCT
vh53ws88h47	6	1	solid	solid	ADJ
vh53ws88h47	6	2	polymer	polymer	NOUN
vh53ws88h47	6	3	electrolytes	electrolyte	NOUN
vh53ws88h47	6	4	(	(	PUNCT
vh53ws88h47	6	5	spes	spes	X
vh53ws88h47	6	6	)	)	PUNCT
vh53ws88h47	6	7	,	,	PUNCT
vh53ws88h47	6	8	which	which	PRON
vh53ws88h47	6	9	consist	consist	VERB
vh53ws88h47	6	10	of	of	ADP
vh53ws88h47	6	11	a	a	DET
vh53ws88h47	6	12	salt	salt	NOUN
vh53ws88h47	6	13	dissolved	dissolve	VERB
vh53ws88h47	6	14	in	in	ADP
vh53ws88h47	6	15	a	a	DET
vh53ws88h47	6	16	polymer	polymer	NOUN
vh53ws88h47	6	17	,	,	PUNCT
vh53ws88h47	6	18	offer	offer	VERB
vh53ws88h47	6	19	a	a	DET
vh53ws88h47	6	20	relatively	relatively	ADV
vh53ws88h47	6	21	simple	simple	ADJ
vh53ws88h47	6	22	solution	solution	NOUN
vh53ws88h47	6	23	.	.	PUNCT
vh53ws88h47	7	1	by	by	ADP
vh53ws88h47	7	2	using	use	VERB
vh53ws88h47	7	3	the	the	DET
vh53ws88h47	7	4	spe	spe	NOUN
vh53ws88h47	7	5	in	in	ADP
vh53ws88h47	7	6	the	the	DET
vh53ws88h47	7	7	place	place	NOUN
vh53ws88h47	7	8	of	of	ADP
vh53ws88h47	7	9	a	a	DET
vh53ws88h47	7	10	gate	gate	NOUN
vh53ws88h47	7	11	dielectric	dielectric	NOUN
vh53ws88h47	7	12	,	,	PUNCT
vh53ws88h47	7	13	ions	ion	NOUN
vh53ws88h47	7	14	in	in	ADP
vh53ws88h47	7	15	the	the	DET
vh53ws88h47	7	16	spe	spe	NOUN
vh53ws88h47	7	17	are	be	AUX
vh53ws88h47	7	18	driven	drive	VERB
vh53ws88h47	7	19	to	to	AUX
vh53ws88h47	7	20	close	close	VERB
vh53ws88h47	7	21	proximity	proximity	NOUN
vh53ws88h47	7	22	(	(	PUNCT
vh53ws88h47	7	23	∼1	∼1	NUM
vh53ws88h47	7	24	nm	nm	NOUN
vh53ws88h47	7	25	)	)	PUNCT
vh53ws88h47	7	26	of	of	ADP
vh53ws88h47	7	27	the	the	DET
vh53ws88h47	7	28	material	material	ADJ
vh53ws88h47	7	29	surface	surface	NOUN
vh53ws88h47	7	30	to	to	PART
vh53ws88h47	7	31	induce	induce	VERB
vh53ws88h47	7	32	image	image	NOUN
vh53ws88h47	7	33	charges	charge	NOUN
vh53ws88h47	7	34	in	in	ADP
vh53ws88h47	7	35	the	the	DET
vh53ws88h47	7	36	2d	2d	NOUN
vh53ws88h47	7	37	material	material	NOUN
vh53ws88h47	7	38	.	.	PUNCT
vh53ws88h47	8	1	the	the	DET
vh53ws88h47	8	2	ion	ion	NOUN
vh53ws88h47	8	3	and	and	CCONJ
vh53ws88h47	8	4	corresponding	correspond	VERB
vh53ws88h47	8	5	image	image	NOUN
vh53ws88h47	8	6	charge	charge	NOUN
vh53ws88h47	8	7	layers	layer	NOUN
vh53ws88h47	8	8	are	be	AUX
vh53ws88h47	8	9	collectively	collectively	ADV
vh53ws88h47	8	10	known	know	VERB
vh53ws88h47	8	11	as	as	ADP
vh53ws88h47	8	12	an	an	DET
vh53ws88h47	8	13	electrostatic	electrostatic	ADJ
vh53ws88h47	8	14	(	(	PUNCT
vh53ws88h47	8	15	or	or	CCONJ
vh53ws88h47	8	16	electric	electric	ADJ
vh53ws88h47	8	17	)	)	PUNCT
vh53ws88h47	8	18	double	double	ADJ
vh53ws88h47	8	19	layer	layer	NOUN
vh53ws88h47	8	20	(	(	PUNCT
vh53ws88h47	8	21	edl	edl	PROPN
vh53ws88h47	8	22	)	)	PUNCT
vh53ws88h47	8	23	.	.	PUNCT
vh53ws88h47	9	1	the	the	DET
vh53ws88h47	9	2	edl	edl	PROPN
vh53ws88h47	9	3	can	can	AUX
vh53ws88h47	9	4	induce	induce	VERB
vh53ws88h47	9	5	charge	charge	NOUN
vh53ws88h47	9	6	carrier	carrier	NOUN
vh53ws88h47	9	7	densities	density	NOUN
vh53ws88h47	9	8	in	in	ADP
vh53ws88h47	9	9	the	the	DET
vh53ws88h47	9	10	material	material	NOUN
vh53ws88h47	9	11	in	in	ADP
vh53ws88h47	9	12	excess	excess	NOUN
vh53ws88h47	9	13	of	of	ADP
vh53ws88h47	9	14	10	10	NUM
vh53ws88h47	9	15	^	^	NUM
vh53ws88h47	9	16	14	14	NUM
vh53ws88h47	9	17	cm^−2	cm^−2	NOUN
vh53ws88h47	9	18	.	.	PUNCT
vh53ws88h47	10	1	the	the	DET
vh53ws88h47	10	2	work	work	NOUN
vh53ws88h47	10	3	presented	present	VERB
vh53ws88h47	10	4	in	in	ADP
vh53ws88h47	10	5	this	this	DET
vh53ws88h47	10	6	dissertation	dissertation	NOUN
vh53ws88h47	10	7	details	detail	VERB
vh53ws88h47	10	8	ways	way	NOUN
vh53ws88h47	10	9	of	of	ADP
vh53ws88h47	10	10	using	use	VERB
vh53ws88h47	10	11	edl	edl	PROPN
vh53ws88h47	10	12	-	-	PUNCT
vh53ws88h47	10	13	induced	induce	VERB
vh53ws88h47	10	14	sheet	sheet	NOUN
vh53ws88h47	10	15	charges	charge	NOUN
vh53ws88h47	10	16	to	to	PART
vh53ws88h47	10	17	open	open	VERB
vh53ws88h47	10	18	up	up	ADP
vh53ws88h47	10	19	new	new	ADJ
vh53ws88h47	10	20	applications	application	NOUN
vh53ws88h47	10	21	in	in	ADP
vh53ws88h47	10	22	the	the	DET
vh53ws88h47	10	23	field	field	NOUN
vh53ws88h47	10	24	of	of	ADP
vh53ws88h47	10	25	nanoelectronics	nanoelectronic	NOUN
vh53ws88h47	10	26	.	.	PUNCT
vh53ws88h47	11	1	by	by	ADP
vh53ws88h47	11	2	tuning	tune	VERB
vh53ws88h47	11	3	the	the	DET
vh53ws88h47	11	4	erich	erich	ADJ
vh53ws88h47	11	5	kinder	kind	ADJ
vh53ws88h47	11	6	glass	glass	NOUN
vh53ws88h47	11	7	transition	transition	NOUN
vh53ws88h47	11	8	temperature	temperature	NOUN
vh53ws88h47	11	9	of	of	ADP
vh53ws88h47	11	10	the	the	DET
vh53ws88h47	11	11	spe	spe	PROPN
vh53ws88h47	11	12	,	,	PUNCT
vh53ws88h47	11	13	the	the	DET
vh53ws88h47	11	14	edl	edl	PROPN
vh53ws88h47	11	15	retention	retention	NOUN
vh53ws88h47	11	16	time	time	NOUN
vh53ws88h47	11	17	can	can	AUX
vh53ws88h47	11	18	be	be	AUX
vh53ws88h47	11	19	increased	increase	VERB
vh53ws88h47	11	20	by	by	ADP
vh53ws88h47	11	21	six	six	NUM
vh53ws88h47	11	22	orders	order	NOUN
vh53ws88h47	11	23	of	of	ADP
vh53ws88h47	11	24	magnitude	magnitude	NOUN
vh53ws88h47	11	25	at	at	ADP
vh53ws88h47	11	26	room	room	NOUN
vh53ws88h47	11	27	temperature	temperature	NOUN
vh53ws88h47	11	28	while	while	SCONJ
vh53ws88h47	11	29	still	still	ADV
vh53ws88h47	11	30	achieving	achieve	VERB
vh53ws88h47	11	31	charge	charge	NOUN
vh53ws88h47	11	32	carrier	carrier	NOUN
vh53ws88h47	11	33	densities	density	NOUN
vh53ws88h47	11	34	in	in	ADP
vh53ws88h47	11	35	excess	excess	NOUN
vh53ws88h47	11	36	of	of	ADP
vh53ws88h47	11	37	10	10	NUM
vh53ws88h47	11	38	^	^	NUM
vh53ws88h47	11	39	14	14	NUM
vh53ws88h47	11	40	cm^−2	cm^−2	NOUN
vh53ws88h47	11	41	,	,	PUNCT
vh53ws88h47	11	42	enabling	enable	VERB
vh53ws88h47	11	43	unique	unique	ADJ
vh53ws88h47	11	44	hardware	hardware	NOUN
vh53ws88h47	11	45	security	security	NOUN
vh53ws88h47	11	46	.	.	PUNCT
vh53ws88h47	12	1	we	we	PRON
vh53ws88h47	12	2	also	also	ADV
vh53ws88h47	12	3	investigate	investigate	VERB
vh53ws88h47	12	4	applying	apply	VERB
vh53ws88h47	12	5	large	large	ADJ
vh53ws88h47	12	6	electric	electric	ADJ
vh53ws88h47	12	7	fields	field	NOUN
vh53ws88h47	12	8	over	over	ADP
vh53ws88h47	12	9	the	the	DET
vh53ws88h47	12	10	spe	spe	NOUN
vh53ws88h47	12	11	,	,	PUNCT
vh53ws88h47	12	12	which	which	PRON
vh53ws88h47	12	13	causes	cause	VERB
vh53ws88h47	12	14	volumetric	volumetric	NOUN
vh53ws88h47	12	15	change	change	NOUN
vh53ws88h47	12	16	in	in	ADP
vh53ws88h47	12	17	2d	2d	NOUN
vh53ws88h47	12	18	electronics	electronic	NOUN
vh53ws88h47	12	19	due	due	ADJ
vh53ws88h47	12	20	to	to	ADP
vh53ws88h47	12	21	ion	ion	NOUN
vh53ws88h47	12	22	intercalation	intercalation	NOUN
vh53ws88h47	12	23	.	.	PUNCT
vh53ws88h47	13	1	2d	2d	PRON
vh53ws88h47	13	2	devices	device	NOUN
vh53ws88h47	13	3	typically	typically	ADV
vh53ws88h47	13	4	are	be	AUX
vh53ws88h47	13	5	top	top	ADV
vh53ws88h47	13	6	-	-	PUNCT
vh53ws88h47	13	7	gated	gate	VERB
vh53ws88h47	13	8	by	by	ADP
vh53ws88h47	13	9	the	the	DET
vh53ws88h47	13	10	spe	spe	NOUN
vh53ws88h47	13	11	.	.	PUNCT
vh53ws88h47	14	1	however	however	ADV
vh53ws88h47	14	2	,	,	PUNCT
vh53ws88h47	14	3	in	in	ADP
vh53ws88h47	14	4	this	this	DET
vh53ws88h47	14	5	work	work	NOUN
vh53ws88h47	14	6	,	,	PUNCT
vh53ws88h47	14	7	backgating	backgate	VERB
vh53ws88h47	14	8	by	by	ADP
vh53ws88h47	14	9	an	an	DET
vh53ws88h47	14	10	spe	spe	NOUN
vh53ws88h47	14	11	is	be	AUX
vh53ws88h47	14	12	demonstrated	demonstrate	VERB
vh53ws88h47	14	13	for	for	ADP
vh53ws88h47	14	14	the	the	DET
vh53ws88h47	14	15	first	first	ADJ
vh53ws88h47	14	16	time	time	NOUN
vh53ws88h47	14	17	.	.	PUNCT
vh53ws88h47	15	1	as	as	ADV
vh53ws88h47	15	2	well	well	ADV
vh53ws88h47	15	3	,	,	PUNCT
vh53ws88h47	15	4	we	we	PRON
vh53ws88h47	15	5	explore	explore	VERB
vh53ws88h47	15	6	partial	partial	ADJ
vh53ws88h47	15	7	switching	switching	NOUN
vh53ws88h47	15	8	of	of	ADP
vh53ws88h47	15	9	the	the	DET
vh53ws88h47	15	10	ferroelectric	ferroelectric	ADJ
vh53ws88h47	15	11	material	material	NOUN
vh53ws88h47	15	12	hfzro2	hfzro2	NOUN
vh53ws88h47	15	13	the	the	DET
vh53ws88h47	15	14	objective	objective	NOUN
vh53ws88h47	15	15	is	be	AUX
vh53ws88h47	15	16	to	to	PART
vh53ws88h47	15	17	use	use	VERB
vh53ws88h47	15	18	the	the	DET
vh53ws88h47	15	19	ferroelectric	ferroelectric	ADJ
vh53ws88h47	15	20	in	in	ADP
vh53ws88h47	15	21	conjunction	conjunction	NOUN
vh53ws88h47	15	22	with	with	ADP
vh53ws88h47	15	23	a	a	DET
vh53ws88h47	15	24	2d	2d	NOUN
vh53ws88h47	15	25	channel	channel	NOUN
vh53ws88h47	15	26	to	to	PART
vh53ws88h47	15	27	form	form	VERB
vh53ws88h47	15	28	a	a	DET
vh53ws88h47	15	29	two	two	NUM
vh53ws88h47	15	30	-	-	PUNCT
vh53ws88h47	15	31	terminal	terminal	NOUN
vh53ws88h47	15	32	resistive	resistive	NOUN
vh53ws88h47	15	33	processing	processing	NOUN
vh53ws88h47	15	34	unit	unit	NOUN
vh53ws88h47	15	35	for	for	ADP
vh53ws88h47	15	36	use	use	NOUN
vh53ws88h47	15	37	in	in	ADP
vh53ws88h47	15	38	hardware	hardware	NOUN
vh53ws88h47	15	39	-	-	PUNCT
vh53ws88h47	15	40	based	base	VERB
vh53ws88h47	15	41	neural	neural	ADJ
vh53ws88h47	15	42	networks	network	NOUN
vh53ws88h47	15	43	.	.	PUNCT