id	sid	tid	token	lemma	pos
vh53ws87t1q	1	1	we	we	PRON
vh53ws87t1q	1	2	present	present	VERB
vh53ws87t1q	1	3	the	the	DET
vh53ws87t1q	1	4	first	first	ADJ
vh53ws87t1q	1	5	working	work	VERB
vh53ws87t1q	1	6	aln	aln	PROPN
vh53ws87t1q	1	7	/	/	SYM
vh53ws87t1q	1	8	gan	gan	PROPN
vh53ws87t1q	1	9	hemt	hemt	PROPN
vh53ws87t1q	1	10	with	with	ADP
vh53ws87t1q	1	11	a	a	DET
vh53ws87t1q	1	12	3	3	NUM
vh53ws87t1q	1	13	nm	nm	NOUN
vh53ws87t1q	1	14	aln	aln	PROPN
vh53ws87t1q	1	15	barrier	barrier	NOUN
vh53ws87t1q	1	16	layer	layer	NOUN
vh53ws87t1q	1	17	that	that	PRON
vh53ws87t1q	1	18	provides	provide	VERB
vh53ws87t1q	1	19	high	high	ADJ
vh53ws87t1q	1	20	polarization	polarization	NOUN
vh53ws87t1q	1	21	induced	induce	VERB
vh53ws87t1q	1	22	charge	charge	NOUN
vh53ws87t1q	1	23	densities	density	NOUN
vh53ws87t1q	1	24	for	for	ADP
vh53ws87t1q	1	25	the	the	DET
vh53ws87t1q	1	26	2deg	2deg	NUM
vh53ws87t1q	1	27	.	.	PUNCT
vh53ws87t1q	2	1	without	without	ADP
vh53ws87t1q	2	2	the	the	DET
vh53ws87t1q	2	3	need	need	NOUN
vh53ws87t1q	2	4	for	for	ADP
vh53ws87t1q	2	5	impurity	impurity	NOUN
vh53ws87t1q	2	6	doping	dope	VERB
vh53ws87t1q	2	7	the	the	DET
vh53ws87t1q	2	8	mobility	mobility	NOUN
vh53ws87t1q	2	9	of	of	ADP
vh53ws87t1q	2	10	the	the	DET
vh53ws87t1q	2	11	aln	aln	PROPN
vh53ws87t1q	2	12	/	/	SYM
vh53ws87t1q	2	13	gan	gan	PROPN
vh53ws87t1q	2	14	heterostructure	heterostructure	NOUN
vh53ws87t1q	2	15	is	be	AUX
vh53ws87t1q	2	16	drastically	drastically	ADV
vh53ws87t1q	2	17	increased	increase	VERB
vh53ws87t1q	2	18	and	and	CCONJ
vh53ws87t1q	2	19	is	be	AUX
vh53ws87t1q	2	20	the	the	DET
vh53ws87t1q	2	21	basis	basis	NOUN
vh53ws87t1q	2	22	of	of	ADP
vh53ws87t1q	2	23	hemt	hemt	PROPN
vh53ws87t1q	2	24	technology	technology	NOUN
vh53ws87t1q	2	25	.	.	PUNCT
vh53ws87t1q	3	1	also	also	ADV
vh53ws87t1q	3	2	enhanced	enhance	VERB
vh53ws87t1q	3	3	by	by	ADP
vh53ws87t1q	3	4	the	the	DET
vh53ws87t1q	3	5	lack	lack	NOUN
vh53ws87t1q	3	6	of	of	ADP
vh53ws87t1q	3	7	alloy	alloy	ADJ
vh53ws87t1q	3	8	disorder	disorder	NOUN
vh53ws87t1q	3	9	scattering	scatter	VERB
vh53ws87t1q	3	10	at	at	ADP
vh53ws87t1q	3	11	the	the	DET
vh53ws87t1q	3	12	interface	interface	NOUN
vh53ws87t1q	3	13	,	,	PUNCT
vh53ws87t1q	3	14	the	the	DET
vh53ws87t1q	3	15	aln	aln	PROPN
vh53ws87t1q	3	16	/	/	SYM
vh53ws87t1q	3	17	gan	gan	PROPN
vh53ws87t1q	3	18	heterostructure	heterostructure	PROPN
vh53ws87t1q	3	19	appears	appear	VERB
vh53ws87t1q	3	20	to	to	PART
vh53ws87t1q	3	21	be	be	AUX
vh53ws87t1q	3	22	the	the	DET
vh53ws87t1q	3	23	ideal	ideal	ADJ
vh53ws87t1q	3	24	candidate	candidate	NOUN
vh53ws87t1q	3	25	for	for	ADP
vh53ws87t1q	3	26	high	high	ADJ
vh53ws87t1q	3	27	speed	speed	NOUN
vh53ws87t1q	3	28	applications	application	NOUN
vh53ws87t1q	3	29	.	.	PUNCT
vh53ws87t1q	4	1	as	as	SCONJ
vh53ws87t1q	4	2	the	the	DET
vh53ws87t1q	4	3	aln	aln	PROPN
vh53ws87t1q	4	4	barrier	barrier	NOUN
vh53ws87t1q	4	5	is	be	AUX
vh53ws87t1q	4	6	quite	quite	ADV
vh53ws87t1q	4	7	thin	thin	ADJ
vh53ws87t1q	4	8	it	it	PRON
vh53ws87t1q	4	9	is	be	AUX
vh53ws87t1q	4	10	presupposed	presuppose	VERB
vh53ws87t1q	4	11	that	that	SCONJ
vh53ws87t1q	4	12	a	a	DET
vh53ws87t1q	4	13	high	high	ADJ
vh53ws87t1q	4	14	leakage	leakage	NOUN
vh53ws87t1q	4	15	current	current	NOUN
vh53ws87t1q	4	16	will	will	AUX
vh53ws87t1q	4	17	persist	persist	VERB
vh53ws87t1q	4	18	through	through	ADP
vh53ws87t1q	4	19	the	the	DET
vh53ws87t1q	4	20	gate	gate	NOUN
vh53ws87t1q	4	21	contact	contact	NOUN
vh53ws87t1q	4	22	.	.	PUNCT
vh53ws87t1q	5	1	high	high	ADJ
vh53ws87t1q	5	2	-	-	PUNCT
vh53ws87t1q	5	3	k	k	PROPN
vh53ws87t1q	5	4	dielectrics	dielectric	NOUN
vh53ws87t1q	5	5	offer	offer	VERB
vh53ws87t1q	5	6	a	a	DET
vh53ws87t1q	5	7	possible	possible	ADJ
vh53ws87t1q	5	8	solution	solution	NOUN
vh53ws87t1q	5	9	to	to	ADP
vh53ws87t1q	5	10	reduced	reduce	VERB
vh53ws87t1q	5	11	gate	gate	NOUN
vh53ws87t1q	5	12	leakage	leakage	NOUN
vh53ws87t1q	5	13	and	and	CCONJ
vh53ws87t1q	5	14	allow	allow	VERB
vh53ws87t1q	5	15	the	the	DET
vh53ws87t1q	5	16	transconductance	transconductance	NOUN
vh53ws87t1q	5	17	and	and	CCONJ
vh53ws87t1q	5	18	scaling	scaling	NOUN
vh53ws87t1q	5	19	of	of	ADP
vh53ws87t1q	5	20	the	the	DET
vh53ws87t1q	5	21	device	device	NOUN
vh53ws87t1q	5	22	to	to	PART
vh53ws87t1q	5	23	be	be	AUX
vh53ws87t1q	5	24	optimized	optimize	VERB
vh53ws87t1q	5	25	.	.	PUNCT
vh53ws87t1q	6	1	preliminary	preliminary	ADJ
vh53ws87t1q	6	2	results	result	NOUN
vh53ws87t1q	6	3	on	on	ADP
vh53ws87t1q	6	4	non	non	ADJ
vh53ws87t1q	6	5	-	-	ADJ
vh53ws87t1q	6	6	optimized	optimized	ADJ
vh53ws87t1q	6	7	aln	aln	PROPN
vh53ws87t1q	6	8	/	/	SYM
vh53ws87t1q	6	9	gan	gan	PROPN
vh53ws87t1q	6	10	devices	device	NOUN
vh53ws87t1q	6	11	show	show	VERB
vh53ws87t1q	6	12	decent	decent	ADJ
vh53ws87t1q	6	13	current	current	ADJ
vh53ws87t1q	6	14	-	-	PUNCT
vh53ws87t1q	6	15	voltage	voltage	NOUN
vh53ws87t1q	6	16	characteristics	characteristic	NOUN
vh53ws87t1q	6	17	amongst	amongst	ADP
vh53ws87t1q	6	18	other	other	ADJ
vh53ws87t1q	6	19	characterization	characterization	NOUN
vh53ws87t1q	6	20	measurements	measurement	NOUN
vh53ws87t1q	6	21	performed	perform	VERB
vh53ws87t1q	6	22	.	.	PUNCT
vh53ws87t1q	7	1	a	a	DET
vh53ws87t1q	7	2	major	major	ADJ
vh53ws87t1q	7	3	issue	issue	NOUN
vh53ws87t1q	7	4	arose	arise	VERB
vh53ws87t1q	7	5	with	with	ADP
vh53ws87t1q	7	6	obtaining	obtain	VERB
vh53ws87t1q	7	7	ohmic	ohmic	ADJ
vh53ws87t1q	7	8	contact	contact	NOUN
vh53ws87t1q	7	9	to	to	ADP
vh53ws87t1q	7	10	high	high	ADJ
vh53ws87t1q	7	11	quality	quality	NOUN
vh53ws87t1q	7	12	aln	aln	PROPN
vh53ws87t1q	7	13	/	/	SYM
vh53ws87t1q	7	14	gan	gan	PROPN
vh53ws87t1q	7	15	heterostructures	heterostructure	NOUN
vh53ws87t1q	7	16	.	.	PUNCT
vh53ws87t1q	8	1	lower	low	ADJ
vh53ws87t1q	8	2	quality	quality	NOUN
vh53ws87t1q	8	3	aln	aln	PROPN
vh53ws87t1q	8	4	barriers	barrier	NOUN
vh53ws87t1q	8	5	have	have	VERB
vh53ws87t1q	8	6	large	large	ADJ
vh53ws87t1q	8	7	dislocation	dislocation	NOUN
vh53ws87t1q	8	8	densities	density	NOUN
vh53ws87t1q	8	9	and	and	CCONJ
vh53ws87t1q	8	10	are	be	AUX
vh53ws87t1q	8	11	easy	easy	ADJ
vh53ws87t1q	8	12	to	to	PART
vh53ws87t1q	8	13	form	form	VERB
vh53ws87t1q	8	14	ohmic	ohmic	ADJ
vh53ws87t1q	8	15	contacts	contact	NOUN
vh53ws87t1q	8	16	on	on	ADP
vh53ws87t1q	8	17	,	,	PUNCT
vh53ws87t1q	8	18	however	however	ADV
vh53ws87t1q	8	19	with	with	ADP
vh53ws87t1q	8	20	higher	high	ADJ
vh53ws87t1q	8	21	crystalline	crystalline	NOUN
vh53ws87t1q	8	22	quality	quality	NOUN
vh53ws87t1q	8	23	aln	aln	ADJ
vh53ws87t1q	8	24	,	,	PUNCT
vh53ws87t1q	8	25	conventional	conventional	ADJ
vh53ws87t1q	8	26	methods	method	NOUN
vh53ws87t1q	8	27	of	of	ADP
vh53ws87t1q	8	28	forming	form	VERB
vh53ws87t1q	8	29	ohmic	ohmic	ADJ
vh53ws87t1q	8	30	contacts	contact	NOUN
vh53ws87t1q	8	31	seem	seem	VERB
vh53ws87t1q	8	32	to	to	PART
vh53ws87t1q	8	33	be	be	AUX
vh53ws87t1q	8	34	of	of	ADP
vh53ws87t1q	8	35	little	little	ADJ
vh53ws87t1q	8	36	value	value	NOUN
vh53ws87t1q	8	37	.	.	PUNCT
vh53ws87t1q	9	1	conventional	conventional	ADJ
vh53ws87t1q	9	2	and	and	CCONJ
vh53ws87t1q	9	3	unconventional	unconventional	ADJ
vh53ws87t1q	9	4	ohmic	ohmic	ADJ
vh53ws87t1q	9	5	contact	contact	NOUN
vh53ws87t1q	9	6	experiments	experiment	NOUN
vh53ws87t1q	9	7	to	to	ADP
vh53ws87t1q	9	8	high	high	ADJ
vh53ws87t1q	9	9	quality	quality	NOUN
vh53ws87t1q	9	10	aln	aln	ADV
vh53ws87t1q	9	11	have	have	AUX
vh53ws87t1q	9	12	been	be	AUX
vh53ws87t1q	9	13	performed	perform	VERB
vh53ws87t1q	9	14	and	and	CCONJ
vh53ws87t1q	9	15	discussed	discuss	VERB
vh53ws87t1q	9	16	.	.	PUNCT