id	sid	tid	token	lemma	pos
th83kw5521z	1	1	while	while	SCONJ
th83kw5521z	1	2	the	the	DET
th83kw5521z	1	3	conventional	conventional	ADJ
th83kw5521z	1	4	algan	algan	NOUN
th83kw5521z	1	5	-	-	PUNCT
th83kw5521z	1	6	barrier	barrier	NOUN
th83kw5521z	1	7	gan	gan	PROPN
th83kw5521z	1	8	high	high	ADJ
th83kw5521z	1	9	electron	electron	NOUN
th83kw5521z	1	10	mobility	mobility	NOUN
th83kw5521z	1	11	transistors	transistor	NOUN
th83kw5521z	1	12	(	(	PUNCT
th83kw5521z	1	13	hemts	hemts	PROPN
th83kw5521z	1	14	)	)	PUNCT
th83kw5521z	1	15	gradually	gradually	ADV
th83kw5521z	1	16	matured	mature	VERB
th83kw5521z	1	17	in	in	ADP
th83kw5521z	1	18	the	the	DET
th83kw5521z	1	19	past	past	ADJ
th83kw5521z	1	20	fifteen	fifteen	NUM
th83kw5521z	1	21	years	year	NOUN
th83kw5521z	1	22	,	,	PUNCT
th83kw5521z	1	23	one	one	NUM
th83kw5521z	1	24	of	of	ADP
th83kw5521z	1	25	the	the	DET
th83kw5521z	1	26	recent	recent	ADJ
th83kw5521z	1	27	research	research	NOUN
th83kw5521z	1	28	interests	interest	NOUN
th83kw5521z	1	29	is	be	AUX
th83kw5521z	1	30	focused	focus	VERB
th83kw5521z	1	31	on	on	ADP
th83kw5521z	1	32	highly	highly	ADV
th83kw5521z	1	33	scaled	scale	VERB
th83kw5521z	1	34	structures	structure	NOUN
th83kw5521z	1	35	to	to	PART
th83kw5521z	1	36	achieve	achieve	VERB
th83kw5521z	1	37	high	high	ADJ
th83kw5521z	1	38	current	current	ADJ
th83kw5521z	1	39	gain	gain	NOUN
th83kw5521z	1	40	and	and	CCONJ
th83kw5521z	1	41	power	power	NOUN
th83kw5521z	1	42	gain	gain	NOUN
th83kw5521z	1	43	cut	cut	VERB
th83kw5521z	1	44	-	-	PUNCT
th83kw5521z	1	45	off	off	ADP
th83kw5521z	1	46	frequency	frequency	NOUN
th83kw5521z	1	47	ft	ft	PROPN
th83kw5521z	1	48	/	/	SYM
th83kw5521z	1	49	fmax	fmax	PROPN
th83kw5521z	1	50	for	for	ADP
th83kw5521z	1	51	high	high	ADJ
th83kw5521z	1	52	speed	speed	NOUN
th83kw5521z	1	53	and	and	CCONJ
th83kw5521z	1	54	power	power	NOUN
th83kw5521z	1	55	amplifying	amplifying	NOUN
th83kw5521z	1	56	applications	application	NOUN
th83kw5521z	1	57	.	.	PUNCT
th83kw5521z	2	1	to	to	PART
th83kw5521z	2	2	reach	reach	VERB
th83kw5521z	2	3	this	this	DET
th83kw5521z	2	4	goal	goal	NOUN
th83kw5521z	2	5	,	,	PUNCT
th83kw5521z	2	6	we	we	PRON
th83kw5521z	2	7	must	must	AUX
th83kw5521z	2	8	address	address	VERB
th83kw5521z	2	9	several	several	ADJ
th83kw5521z	2	10	critical	critical	ADJ
th83kw5521z	2	11	issues	issue	NOUN
th83kw5521z	2	12	by	by	ADP
th83kw5521z	2	13	realizing	realize	VERB
th83kw5521z	2	14	:	:	PUNCT
th83kw5521z	2	15	1	1	X
th83kw5521z	2	16	)	)	PUNCT
th83kw5521z	2	17	low	low	ADJ
th83kw5521z	2	18	on	on	ADP
th83kw5521z	2	19	-	-	PUNCT
th83kw5521z	2	20	resistance	resistance	NOUN
th83kw5521z	2	21	(	(	PUNCT
th83kw5521z	2	22	both	both	CCONJ
th83kw5521z	2	23	low	low	ADJ
th83kw5521z	2	24	ohmic	ohmic	ADJ
th83kw5521z	2	25	contact	contact	NOUN
th83kw5521z	2	26	resistance	resistance	NOUN
th83kw5521z	2	27	and	and	CCONJ
th83kw5521z	2	28	low	low	ADJ
th83kw5521z	2	29	sheet	sheet	NOUN
th83kw5521z	2	30	resistance	resistance	NOUN
th83kw5521z	2	31	in	in	ADP
th83kw5521z	2	32	the	the	DET
th83kw5521z	2	33	access	access	NOUN
th83kw5521z	2	34	region	region	NOUN
th83kw5521z	2	35	)	)	PUNCT
th83kw5521z	2	36	,	,	PUNCT
th83kw5521z	2	37	2	2	X
th83kw5521z	2	38	)	)	PUNCT
th83kw5521z	2	39	sub-100	sub-100	NOUN
th83kw5521z	2	40	nm	nm	PROPN
th83kw5521z	2	41	gate	gate	NOUN
th83kw5521z	2	42	length	length	NOUN
th83kw5521z	2	43	,	,	PUNCT
th83kw5521z	2	44	3	3	NUM
th83kw5521z	2	45	)	)	PUNCT
th83kw5521z	2	46	minimal	minimal	ADJ
th83kw5521z	2	47	gate	gate	NOUN
th83kw5521z	2	48	-	-	PUNCT
th83kw5521z	2	49	drain	drain	NOUN
th83kw5521z	2	50	depletion	depletion	NOUN
th83kw5521z	2	51	extension	extension	NOUN
th83kw5521z	2	52	,	,	PUNCT
th83kw5521z	2	53	4	4	NUM
th83kw5521z	2	54	)	)	PUNCT
th83kw5521z	2	55	favorable	favorable	ADJ
th83kw5521z	2	56	carrier	carrier	NOUN
th83kw5521z	2	57	confinement	confinement	NOUN
th83kw5521z	2	58	in	in	ADP
th83kw5521z	2	59	the	the	DET
th83kw5521z	2	60	channel	channel	NOUN
th83kw5521z	2	61	with	with	ADP
th83kw5521z	2	62	thin	thin	ADJ
th83kw5521z	2	63	top	top	ADJ
th83kw5521z	2	64	barrier	barrier	NOUN
th83kw5521z	2	65	thus	thus	ADV
th83kw5521z	2	66	high	high	ADJ
th83kw5521z	2	67	transconductance	transconductance	NOUN
th83kw5521z	2	68	,	,	PUNCT
th83kw5521z	2	69	5	5	X
th83kw5521z	2	70	)	)	PUNCT
th83kw5521z	2	71	sufficient	sufficient	ADJ
th83kw5521z	2	72	passivation	passivation	NOUN
th83kw5521z	2	73	of	of	ADP
th83kw5521z	2	74	surface	surface	NOUN
th83kw5521z	2	75	states	state	NOUN
th83kw5521z	2	76	and	and	CCONJ
th83kw5521z	2	77	traps	trap	NOUN
th83kw5521z	2	78	to	to	PART
th83kw5521z	2	79	suppress	suppress	VERB
th83kw5521z	2	80	the	the	DET
th83kw5521z	2	81	current	current	ADJ
th83kw5521z	2	82	collapse	collapse	NOUN
th83kw5521z	2	83	and	and	CCONJ
th83kw5521z	2	84	frequency	frequency	NOUN
th83kw5521z	2	85	dispersion	dispersion	NOUN
th83kw5521z	2	86	,	,	PUNCT
th83kw5521z	2	87	6	6	NUM
th83kw5521z	2	88	)	)	PUNCT
th83kw5521z	2	89	small	small	ADJ
th83kw5521z	2	90	parasitic	parasitic	ADJ
th83kw5521z	2	91	capacitance	capacitance	NOUN
th83kw5521z	2	92	and	and	CCONJ
th83kw5521z	2	93	gate	gate	NOUN
th83kw5521z	2	94	resistance	resistance	NOUN
th83kw5521z	2	95	,	,	PUNCT
th83kw5521z	2	96	and	and	CCONJ
th83kw5521z	2	97	7	7	X
th83kw5521z	2	98	)	)	PUNCT
th83kw5521z	2	99	reasonably	reasonably	ADV
th83kw5521z	2	100	high	high	ADJ
th83kw5521z	2	101	breakdown	breakdown	NOUN
th83kw5521z	2	102	voltage	voltage	NOUN
th83kw5521z	2	103	.	.	PUNCT
th83kw5521z	3	1	in	in	ADP
th83kw5521z	3	2	this	this	DET
th83kw5521z	3	3	work	work	NOUN
th83kw5521z	3	4	,	,	PUNCT
th83kw5521z	3	5	inalgan	inalgan	PROPN
th83kw5521z	3	6	/	/	SYM
th83kw5521z	3	7	aln	aln	NOUN
th83kw5521z	3	8	-	-	PUNCT
th83kw5521z	3	9	barrier	barrier	NOUN
th83kw5521z	3	10	hemts	hemts	PROPN
th83kw5521z	3	11	have	have	AUX
th83kw5521z	3	12	been	be	AUX
th83kw5521z	3	13	developed	develop	VERB
th83kw5521z	3	14	for	for	ADP
th83kw5521z	3	15	the	the	DET
th83kw5521z	3	16	first	first	ADJ
th83kw5521z	3	17	time	time	NOUN
th83kw5521z	3	18	at	at	ADP
th83kw5521z	3	19	the	the	DET
th83kw5521z	3	20	university	university	PROPN
th83kw5521z	3	21	of	of	ADP
th83kw5521z	3	22	notre	notre	PROPN
th83kw5521z	3	23	dame	dame	NOUN
th83kw5521z	3	24	due	due	ADP
th83kw5521z	3	25	to	to	ADP
th83kw5521z	3	26	its	its	PRON
th83kw5521z	3	27	inherent	inherent	ADJ
th83kw5521z	3	28	scalability	scalability	NOUN
th83kw5521z	3	29	:	:	PUNCT
th83kw5521z	3	30	thin	thin	ADJ
th83kw5521z	3	31	barriers	barrier	NOUN
th83kw5521z	3	32	(	(	PUNCT
th83kw5521z	3	33	1	1	NUM
th83kw5521z	3	34	-	-	SYM
th83kw5521z	3	35	10	10	NUM
th83kw5521z	3	36	nm	nm	NOUN
th83kw5521z	3	37	,	,	PUNCT
th83kw5521z	3	38	i.e.	i.e.	X
th83kw5521z	3	39	eot	eot	PROPN
th83kw5521z	3	40	~0.5	~0.5	SPACE
th83kw5521z	3	41	-	-	SYM
th83kw5521z	3	42	5	5	NUM
th83kw5521z	3	43	nm	nm	NOUN
th83kw5521z	3	44	)	)	PUNCT
th83kw5521z	3	45	and	and	CCONJ
th83kw5521z	3	46	attractive	attractive	ADJ
th83kw5521z	3	47	2deg	2deg	NUM
th83kw5521z	3	48	properties	property	NOUN
th83kw5521z	3	49	(	(	PUNCT
th83kw5521z	3	50	ns	ns	X
th83kw5521z	3	51	>	>	X
th83kw5521z	3	52	1	1	NUM
th83kw5521z	3	53	x	x	SYM
th83kw5521z	3	54	10	10	NUM
th83kw5521z	3	55	^	^	NUM
th83kw5521z	3	56	13	13	NUM
th83kw5521z	3	57	cm-2	cm-2	PROPN
th83kw5521z	3	58	,	,	PUNCT
th83kw5521z	3	59	mobility	mobility	NOUN
th83kw5521z	3	60	>	>	X
th83kw5521z	3	61	1000	1000	NUM
th83kw5521z	3	62	cm2	cm2	PROPN
th83kw5521z	3	63	/	/	SYM
th83kw5521z	3	64	v.s	v.s	PROPN
th83kw5521z	3	65	)	)	PUNCT
th83kw5521z	3	66	.	.	PUNCT
th83kw5521z	4	1	based	base	VERB
th83kw5521z	4	2	on	on	ADP
th83kw5521z	4	3	the	the	DET
th83kw5521z	4	4	successful	successful	ADJ
th83kw5521z	4	5	development	development	NOUN
th83kw5521z	4	6	of	of	ADP
th83kw5521z	4	7	ohmic	ohmic	ADJ
th83kw5521z	4	8	contacts	contact	NOUN
th83kw5521z	4	9	and	and	CCONJ
th83kw5521z	4	10	novel	novel	ADJ
th83kw5521z	4	11	dielectric	dielectric	NOUN
th83kw5521z	4	12	-	-	PUNCT
th83kw5521z	4	13	free	free	ADJ
th83kw5521z	4	14	passivation	passivation	NOUN
th83kw5521z	4	15	,	,	PUNCT
th83kw5521z	4	16	record	record	NOUN
th83kw5521z	4	17	performance	performance	NOUN
th83kw5521z	4	18	devices	device	NOUN
th83kw5521z	4	19	are	be	AUX
th83kw5521z	4	20	demonstrated	demonstrate	VERB
th83kw5521z	4	21	,	,	PUNCT
th83kw5521z	4	22	e.g.	e.g.	ADV
th83kw5521z	4	23	ft	ft	NOUN
th83kw5521z	4	24	of	of	ADP
th83kw5521z	4	25	220	220	NUM
th83kw5521z	4	26	ghz	ghz	NOUN
th83kw5521z	4	27	with	with	ADP
th83kw5521z	4	28	a	a	DET
th83kw5521z	4	29	66	66	NUM
th83kw5521z	4	30	-	-	PUNCT
th83kw5521z	4	31	nm	nm	NOUN
th83kw5521z	4	32	-	-	PUNCT
th83kw5521z	4	33	long	long	ADJ
th83kw5521z	4	34	trapezoidal	trapezoidal	ADJ
th83kw5521z	4	35	gate	gate	NOUN
th83kw5521z	4	36	and	and	CCONJ
th83kw5521z	4	37	ft	ft	PROPN
th83kw5521z	4	38	/	/	SYM
th83kw5521z	4	39	fmax	fmax	PROPN
th83kw5521z	4	40	of	of	ADP
th83kw5521z	4	41	230/300	230/300	NUM
th83kw5521z	4	42	ghz	ghz	NOUN
th83kw5521z	4	43	with	with	ADP
th83kw5521z	4	44	a	a	DET
th83kw5521z	4	45	40	40	NUM
th83kw5521z	4	46	-	-	PUNCT
th83kw5521z	4	47	nm	nm	NOUN
th83kw5521z	4	48	-	-	PUNCT
th83kw5521z	4	49	long	long	ADJ
th83kw5521z	4	50	t	t	PROPN
th83kw5521z	4	51	-	-	PUNCT
th83kw5521z	4	52	gate	gate	PROPN
th83kw5521z	4	53	.	.	PUNCT
th83kw5521z	5	1	in	in	ADP
th83kw5521z	5	2	this	this	DET
th83kw5521z	5	3	dissertation	dissertation	NOUN
th83kw5521z	5	4	,	,	PUNCT
th83kw5521z	5	5	advanced	advanced	ADJ
th83kw5521z	5	6	epitaxial	epitaxial	ADJ
th83kw5521z	5	7	designs	design	NOUN
th83kw5521z	5	8	have	have	AUX
th83kw5521z	5	9	been	be	AUX
th83kw5521z	5	10	investigated	investigate	VERB
th83kw5521z	5	11	in	in	ADP
th83kw5521z	5	12	order	order	NOUN
th83kw5521z	5	13	to	to	PART
th83kw5521z	5	14	obtain	obtain	VERB
th83kw5521z	5	15	excellent	excellent	ADJ
th83kw5521z	5	16	transport	transport	NOUN
th83kw5521z	5	17	properties	property	NOUN
th83kw5521z	5	18	,	,	PUNCT
th83kw5521z	5	19	good	good	ADJ
th83kw5521z	5	20	scalability	scalability	NOUN
th83kw5521z	5	21	,	,	PUNCT
th83kw5521z	5	22	and	and	CCONJ
th83kw5521z	5	23	improved	improve	VERB
th83kw5521z	5	24	electron	electron	NOUN
th83kw5521z	5	25	confinement	confinement	NOUN
th83kw5521z	5	26	for	for	ADP
th83kw5521z	5	27	high	high	ADJ
th83kw5521z	5	28	speed	speed	NOUN
th83kw5521z	5	29	electronics	electronic	NOUN
th83kw5521z	5	30	.	.	PUNCT
th83kw5521z	6	1	the	the	DET
th83kw5521z	6	2	process	process	NOUN
th83kw5521z	6	3	developments	development	NOUN
th83kw5521z	6	4	have	have	AUX
th83kw5521z	6	5	been	be	AUX
th83kw5521z	6	6	summarized	summarize	VERB
th83kw5521z	6	7	,	,	PUNCT
th83kw5521z	6	8	including	include	VERB
th83kw5521z	6	9	mesa	mesa	NOUN
th83kw5521z	6	10	isolation	isolation	NOUN
th83kw5521z	6	11	,	,	PUNCT
th83kw5521z	6	12	ohmic	ohmic	ADJ
th83kw5521z	6	13	contact	contact	NOUN
th83kw5521z	6	14	formation	formation	NOUN
th83kw5521z	6	15	,	,	PUNCT
th83kw5521z	6	16	and	and	CCONJ
th83kw5521z	6	17	t	t	PROPN
th83kw5521z	6	18	-	-	PUNCT
th83kw5521z	6	19	gate	gate	NOUN
th83kw5521z	6	20	fabrication	fabrication	NOUN
th83kw5521z	6	21	.	.	PUNCT
th83kw5521z	7	1	the	the	DET
th83kw5521z	7	2	device	device	NOUN
th83kw5521z	7	3	passivation	passivation	NOUN
th83kw5521z	7	4	mechanism	mechanism	NOUN
th83kw5521z	7	5	with	with	ADP
th83kw5521z	7	6	both	both	CCONJ
th83kw5521z	7	7	dielectric	dielectric	NOUN
th83kw5521z	7	8	films	film	NOUN
th83kw5521z	7	9	and	and	CCONJ
th83kw5521z	7	10	dielectric	dielectric	NOUN
th83kw5521z	7	11	-	-	PUNCT
th83kw5521z	7	12	free	free	ADJ
th83kw5521z	7	13	plasma	plasma	NOUN
th83kw5521z	7	14	treatments	treatment	NOUN
th83kw5521z	7	15	have	have	AUX
th83kw5521z	7	16	been	be	AUX
th83kw5521z	7	17	intensively	intensively	ADV
th83kw5521z	7	18	studied	study	VERB
th83kw5521z	7	19	and	and	CCONJ
th83kw5521z	7	20	compared	compare	VERB
th83kw5521z	7	21	,	,	PUNCT
th83kw5521z	7	22	based	base	VERB
th83kw5521z	7	23	on	on	ADP
th83kw5521z	7	24	which	which	PRON
th83kw5521z	7	25	an	an	DET
th83kw5521z	7	26	effective	effective	ADJ
th83kw5521z	7	27	passivation	passivation	NOUN
th83kw5521z	7	28	solution	solution	NOUN
th83kw5521z	7	29	for	for	ADP
th83kw5521z	7	30	devices	device	NOUN
th83kw5521z	7	31	with	with	ADP
th83kw5521z	7	32	alloyed	alloyed	ADJ
th83kw5521z	7	33	and	and	CCONJ
th83kw5521z	7	34	non	non	ADJ
th83kw5521z	7	35	-	-	ADJ
th83kw5521z	7	36	alloyed	alloyed	ADJ
th83kw5521z	7	37	ohmic	ohmic	ADJ
th83kw5521z	7	38	contacts	contact	NOUN
th83kw5521z	7	39	has	have	AUX
th83kw5521z	7	40	been	be	AUX
th83kw5521z	7	41	proposed	propose	VERB
th83kw5521z	7	42	:	:	PUNCT
th83kw5521z	7	43	plasma	plasma	NOUN
th83kw5521z	7	44	-	-	PUNCT
th83kw5521z	7	45	assisted	assist	VERB
th83kw5521z	7	46	thin	thin	ADJ
th83kw5521z	7	47	dielectric	dielectric	ADJ
th83kw5521z	7	48	passivation	passivation	NOUN
th83kw5521z	7	49	.	.	PUNCT