id	sid	tid	token	lemma	pos
th83kw5520m	1	1	the	the	DET
th83kw5520m	1	2	large	large	ADJ
th83kw5520m	1	3	polarization	polarization	NOUN
th83kw5520m	1	4	difference	difference	NOUN
th83kw5520m	1	5	between	between	ADP
th83kw5520m	1	6	aln	aln	ADV
th83kw5520m	1	7	and	and	CCONJ
th83kw5520m	1	8	gan	gan	PROPN
th83kw5520m	1	9	provides	provide	VERB
th83kw5520m	1	10	extremely	extremely	ADV
th83kw5520m	1	11	high	high	ADJ
th83kw5520m	1	12	electron	electron	NOUN
th83kw5520m	1	13	densities	density	NOUN
th83kw5520m	1	14	at	at	ADP
th83kw5520m	1	15	the	the	DET
th83kw5520m	1	16	interface	interface	NOUN
th83kw5520m	1	17	of	of	ADP
th83kw5520m	1	18	aln	aln	PROPN
th83kw5520m	1	19	/	/	SYM
th83kw5520m	1	20	gan	gan	PROPN
th83kw5520m	1	21	heterojunctions	heterojunctions	PROPN
th83kw5520m	1	22	.	.	PUNCT
th83kw5520m	2	1	in	in	ADP
th83kw5520m	2	2	this	this	DET
th83kw5520m	2	3	work	work	NOUN
th83kw5520m	2	4	the	the	DET
th83kw5520m	2	5	growths	growth	NOUN
th83kw5520m	2	6	of	of	ADP
th83kw5520m	2	7	high	high	ADJ
th83kw5520m	2	8	-	-	PUNCT
th83kw5520m	2	9	quality	quality	NOUN
th83kw5520m	2	10	single	single	ADJ
th83kw5520m	2	11	aln	aln	PROPN
th83kw5520m	2	12	/	/	SYM
th83kw5520m	2	13	gan	gan	PROPN
th83kw5520m	2	14	heterojunctions	heterojunction	NOUN
th83kw5520m	2	15	with	with	ADP
th83kw5520m	2	16	rfmbe	rfmbe	PROPN
th83kw5520m	2	17	are	be	AUX
th83kw5520m	2	18	reported	report	VERB
th83kw5520m	2	19	,	,	PUNCT
th83kw5520m	2	20	which	which	PRON
th83kw5520m	2	21	leads	lead	VERB
th83kw5520m	2	22	to	to	ADP
th83kw5520m	2	23	high	high	ADJ
th83kw5520m	2	24	-	-	PUNCT
th83kw5520m	2	25	conductivity	conductivity	NOUN
th83kw5520m	2	26	two	two	NUM
th83kw5520m	2	27	-	-	PUNCT
th83kw5520m	2	28	dimensional	dimensional	ADJ
th83kw5520m	2	29	electron	electron	NOUN
th83kw5520m	2	30	gases	gas	NOUN
th83kw5520m	2	31	.	.	PUNCT
th83kw5520m	3	1	the	the	DET
th83kw5520m	3	2	sheet	sheet	NOUN
th83kw5520m	3	3	densities	density	NOUN
th83kw5520m	3	4	can	can	AUX
th83kw5520m	3	5	be	be	AUX
th83kw5520m	3	6	tuned	tune	VERB
th83kw5520m	3	7	from	from	ADP
th83kw5520m	3	8	~5	~5	NUM
th83kw5520m	3	9	*	*	SYM
th83kw5520m	3	10	1012	1012	NUM
th83kw5520m	3	11	/	/	SYM
th83kw5520m	3	12	cm2	cm2	NOUN
th83kw5520m	3	13	to	to	ADP
th83kw5520m	3	14	~5	~5	NUM
th83kw5520m	3	15	*	*	NUM
th83kw5520m	3	16	1013	1013	NUM
th83kw5520m	3	17	/	/	SYM
th83kw5520m	3	18	cm2	cm2	NOUN
th83kw5520m	3	19	by	by	ADP
th83kw5520m	3	20	varying	vary	VERB
th83kw5520m	3	21	the	the	DET
th83kw5520m	3	22	aln	aln	ADJ
th83kw5520m	3	23	thickness	thickness	NOUN
th83kw5520m	3	24	from	from	ADP
th83kw5520m	3	25	2	2	NUM
th83kw5520m	3	26	7	7	NUM
th83kw5520m	3	27	nm	nm	NOUN
th83kw5520m	3	28	.	.	PUNCT
th83kw5520m	4	1	a	a	DET
th83kw5520m	4	2	critical	critical	ADJ
th83kw5520m	4	3	thickness	thickness	NOUN
th83kw5520m	4	4	is	be	AUX
th83kw5520m	4	5	observed	observe	VERB
th83kw5520m	4	6	beyond	beyond	ADP
th83kw5520m	4	7	which	which	PRON
th83kw5520m	4	8	biaxial	biaxial	ADJ
th83kw5520m	4	9	strain	strain	NOUN
th83kw5520m	4	10	relaxation	relaxation	NOUN
th83kw5520m	4	11	and	and	CCONJ
th83kw5520m	4	12	cracking	cracking	NOUN
th83kw5520m	4	13	of	of	ADP
th83kw5520m	4	14	aln	aln	ADV
th83kw5520m	4	15	occurs	occur	VERB
th83kw5520m	4	16	,	,	PUNCT
th83kw5520m	4	17	and	and	CCONJ
th83kw5520m	4	18	a	a	DET
th83kw5520m	4	19	degradation	degradation	NOUN
th83kw5520m	4	20	of	of	ADP
th83kw5520m	4	21	carrier	carrier	NOUN
th83kw5520m	4	22	mobility	mobility	NOUN
th83kw5520m	4	23	is	be	AUX
th83kw5520m	4	24	seen	see	VERB
th83kw5520m	4	25	to	to	PART
th83kw5520m	4	26	occur	occur	VERB
th83kw5520m	4	27	at	at	ADP
th83kw5520m	4	28	extremely	extremely	ADV
th83kw5520m	4	29	high	high	ADJ
th83kw5520m	4	30	sheet	sheet	NOUN
th83kw5520m	4	31	densities	density	NOUN
th83kw5520m	4	32	.	.	PUNCT
th83kw5520m	5	1	high	high	ADJ
th83kw5520m	5	2	-	-	PUNCT
th83kw5520m	5	3	mobility	mobility	NOUN
th83kw5520m	5	4	windows	window	NOUN
th83kw5520m	5	5	are	be	AUX
th83kw5520m	5	6	identified	identify	VERB
th83kw5520m	5	7	with	with	ADP
th83kw5520m	5	8	different	different	ADJ
th83kw5520m	5	9	growth	growth	NOUN
th83kw5520m	5	10	rates	rate	NOUN
th83kw5520m	5	11	.	.	PUNCT
th83kw5520m	6	1	record	record	NOUN
th83kw5520m	6	2	low	low	ADJ
th83kw5520m	6	3	sheet	sheet	NOUN
th83kw5520m	6	4	resistances	resistance	NOUN
th83kw5520m	6	5	in	in	ADP
th83kw5520m	6	6	the	the	DET
th83kw5520m	6	7	range	range	NOUN
th83kw5520m	6	8	of	of	ADP
th83kw5520m	6	9	~148	~148	PROPN
th83kw5520m	6	10	å_åü	å_åü	NOUN
th83kw5520m	6	11	/	/	SYM
th83kw5520m	6	12	sq	sq	NOUN
th83kw5520m	6	13	has	have	AUX
th83kw5520m	6	14	been	be	AUX
th83kw5520m	6	15	achieved	achieve	VERB
th83kw5520m	6	16	.	.	PUNCT
th83kw5520m	7	1	interface	interface	NOUN
th83kw5520m	7	2	roughness	roughness	NOUN
th83kw5520m	7	3	scattering	scatter	VERB
th83kw5520m	7	4	and	and	CCONJ
th83kw5520m	7	5	strain	strain	NOUN
th83kw5520m	7	6	relaxation	relaxation	NOUN
th83kw5520m	7	7	are	be	AUX
th83kw5520m	7	8	identified	identify	VERB
th83kw5520m	7	9	as	as	ADP
th83kw5520m	7	10	the	the	DET
th83kw5520m	7	11	factors	factor	NOUN
th83kw5520m	7	12	preventing	prevent	VERB
th83kw5520m	7	13	lower	low	ADJ
th83kw5520m	7	14	sheet	sheet	NOUN
th83kw5520m	7	15	resistances	resistance	NOUN
th83kw5520m	7	16	at	at	ADP
th83kw5520m	7	17	present	present	NOUN
th83kw5520m	7	18	.	.	PUNCT
th83kw5520m	8	1	at	at	ADP
th83kw5520m	8	2	low	low	ADJ
th83kw5520m	8	3	temperature	temperature	NOUN
th83kw5520m	8	4	,	,	PUNCT
th83kw5520m	8	5	shubnikov	shubnikov	NOUN
th83kw5520m	8	6	-	-	PUNCT
th83kw5520m	8	7	de	de	ADJ
th83kw5520m	8	8	-	-	PUNCT
th83kw5520m	8	9	haas	haas	ADJ
th83kw5520m	8	10	oscillations	oscillation	NOUN
th83kw5520m	8	11	have	have	AUX
th83kw5520m	8	12	been	be	AUX
th83kw5520m	8	13	observed	observe	VERB
th83kw5520m	8	14	for	for	ADP
th83kw5520m	8	15	the	the	DET
th83kw5520m	8	16	first	first	ADJ
th83kw5520m	8	17	time	time	NOUN
th83kw5520m	8	18	in	in	ADP
th83kw5520m	8	19	single	single	PROPN
th83kw5520m	8	20	aln	aln	PROPN
th83kw5520m	8	21	/	/	SYM
th83kw5520m	8	22	gan	gan	PROPN
th83kw5520m	8	23	heterojunctions	heterojunctions	PROPN
th83kw5520m	8	24	.	.	PUNCT
th83kw5520m	9	1	the	the	DET
th83kw5520m	9	2	mbe	mbe	PROPN
th83kw5520m	9	3	growth	growth	NOUN
th83kw5520m	9	4	for	for	ADP
th83kw5520m	9	5	multiple	multiple	ADJ
th83kw5520m	9	6	aln	aln	PROPN
th83kw5520m	9	7	/	/	SYM
th83kw5520m	9	8	gan	gan	PROPN
th83kw5520m	9	9	heterojunctions	heterojunction	NOUN
th83kw5520m	9	10	are	be	AUX
th83kw5520m	9	11	also	also	ADV
th83kw5520m	9	12	studied	study	VERB
th83kw5520m	9	13	.	.	PUNCT
th83kw5520m	10	1	the	the	DET
th83kw5520m	10	2	electron	electron	NOUN
th83kw5520m	10	3	energy	energy	NOUN
th83kw5520m	10	4	states	state	NOUN
th83kw5520m	10	5	are	be	AUX
th83kw5520m	10	6	calculated	calculate	VERB
th83kw5520m	10	7	in	in	ADP
th83kw5520m	10	8	the	the	DET
th83kw5520m	10	9	aln	aln	PROPN
th83kw5520m	10	10	/	/	SYM
th83kw5520m	10	11	gan	gan	PROPN
th83kw5520m	10	12	superlattices	superlattices	PROPN
th83kw5520m	10	13	which	which	PRON
th83kw5520m	10	14	inductivelyto	inductivelyto	X
th83kw5520m	10	15	obtain	obtain	VERB
th83kw5520m	10	16	give	give	VERB
th83kw5520m	10	17	the	the	DET
th83kw5520m	10	18	miniband	miniband	NOUN
th83kw5520m	10	19	structures	structure	NOUN
th83kw5520m	10	20	,	,	PUNCT
th83kw5520m	10	21	for	for	ADP
th83kw5520m	10	22	the	the	DET
th83kw5520m	10	23	design	design	NOUN
th83kw5520m	10	24	of	of	ADP
th83kw5520m	10	25	intersubband	intersubband	PROPN
th83kw5520m	10	26	emitters	emitter	NOUN
th83kw5520m	10	27	of	of	ADP
th83kw5520m	10	28	detectors	detector	NOUN
th83kw5520m	10	29	.	.	PUNCT
th83kw5520m	11	1	propagation	propagation	NOUN
th83kw5520m	11	2	of	of	ADP
th83kw5520m	11	3	longitudinal	longitudinal	ADJ
th83kw5520m	11	4	acoustic	acoustic	ADJ
th83kw5520m	11	5	phonons	phonon	NOUN
th83kw5520m	11	6	through	through	ADP
th83kw5520m	11	7	aln	aln	PROPN
th83kw5520m	11	8	/	/	SYM
th83kw5520m	11	9	gan	gan	PROPN
th83kw5520m	11	10	superlattices	superlattice	NOUN
th83kw5520m	11	11	is	be	AUX
th83kw5520m	11	12	simulated	simulate	VERB
th83kw5520m	11	13	.	.	PUNCT
th83kw5520m	12	1	finally	finally	ADV
th83kw5520m	12	2	,	,	PUNCT
th83kw5520m	12	3	phonon	phonon	NOUN
th83kw5520m	12	4	filters	filter	NOUN
th83kw5520m	12	5	and	and	CCONJ
th83kw5520m	12	6	phonon	phonon	NOUN
th83kw5520m	12	7	cavities	cavity	NOUN
th83kw5520m	12	8	are	be	AUX
th83kw5520m	12	9	designed	design	VERB
th83kw5520m	12	10	for	for	ADP
th83kw5520m	12	11	efficient	efficient	ADJ
th83kw5520m	12	12	thermal	thermal	ADJ
th83kw5520m	12	13	engineering	engineering	NOUN
th83kw5520m	12	14	from	from	ADP
th83kw5520m	12	15	nitride	nitride	PROPN
th83kw5520m	12	16	active	active	ADJ
th83kw5520m	12	17	layers	layer	NOUN
th83kw5520m	12	18	.	.	PUNCT