id	sid	tid	token	lemma	pos
sx61dj5681g	1	1	the	the	DET
sx61dj5681g	1	2	coupling	coupling	NOUN
sx61dj5681g	1	3	of	of	ADP
sx61dj5681g	1	4	scanning	scan	VERB
sx61dj5681g	1	5	microscopy	microscopy	NOUN
sx61dj5681g	1	6	and	and	CCONJ
sx61dj5681g	1	7	contact	contact	VERB
sx61dj5681g	1	8	potential	potential	ADJ
sx61dj5681g	1	9	difference	difference	NOUN
sx61dj5681g	1	10	(	(	PUNCT
sx61dj5681g	1	11	cpd	cpd	NOUN
sx61dj5681g	1	12	)	)	PUNCT
sx61dj5681g	1	13	measurements	measurement	NOUN
sx61dj5681g	1	14	has	have	AUX
sx61dj5681g	1	15	enabled	enable	VERB
sx61dj5681g	1	16	a	a	DET
sx61dj5681g	1	17	wide	wide	ADJ
sx61dj5681g	1	18	range	range	NOUN
sx61dj5681g	1	19	of	of	ADP
sx61dj5681g	1	20	surface	surface	NOUN
sx61dj5681g	1	21	characterization	characterization	NOUN
sx61dj5681g	1	22	capabilities	capability	NOUN
sx61dj5681g	1	23	,	,	PUNCT
sx61dj5681g	1	24	such	such	ADJ
sx61dj5681g	1	25	as	as	ADP
sx61dj5681g	1	26	the	the	DET
sx61dj5681g	1	27	identification	identification	NOUN
sx61dj5681g	1	28	of	of	ADP
sx61dj5681g	1	29	dopants	dopant	NOUN
sx61dj5681g	1	30	in	in	ADP
sx61dj5681g	1	31	a	a	DET
sx61dj5681g	1	32	material	material	NOUN
sx61dj5681g	1	33	,	,	PUNCT
sx61dj5681g	1	34	mapping	mapping	NOUN
sx61dj5681g	1	35	of	of	ADP
sx61dj5681g	1	36	the	the	DET
sx61dj5681g	1	37	charge	charge	NOUN
sx61dj5681g	1	38	distribution	distribution	NOUN
sx61dj5681g	1	39	of	of	ADP
sx61dj5681g	1	40	a	a	DET
sx61dj5681g	1	41	sample	sample	NOUN
sx61dj5681g	1	42	,	,	PUNCT
sx61dj5681g	1	43	and	and	CCONJ
sx61dj5681g	1	44	the	the	DET
sx61dj5681g	1	45	imaging	imaging	NOUN
sx61dj5681g	1	46	of	of	ADP
sx61dj5681g	1	47	the	the	DET
sx61dj5681g	1	48	band	band	NOUN
sx61dj5681g	1	49	bending	bending	NOUN
sx61dj5681g	1	50	of	of	ADP
sx61dj5681g	1	51	semiconductors	semiconductor	NOUN
sx61dj5681g	1	52	.	.	PUNCT
sx61dj5681g	2	1	the	the	DET
sx61dj5681g	2	2	two	two	NUM
sx61dj5681g	2	3	most	most	ADV
sx61dj5681g	2	4	common	common	ADJ
sx61dj5681g	2	5	scanning	scan	VERB
sx61dj5681g	2	6	cpd	cpd	NOUN
sx61dj5681g	2	7	methods	method	NOUN
sx61dj5681g	2	8	to	to	ADP
sx61dj5681g	2	9	date	date	NOUN
sx61dj5681g	2	10	are	be	AUX
sx61dj5681g	2	11	electrostatic	electrostatic	ADJ
sx61dj5681g	2	12	force	force	NOUN
sx61dj5681g	2	13	microscopy	microscopy	NOUN
sx61dj5681g	2	14	(	(	PUNCT
sx61dj5681g	2	15	efm	efm	PROPN
sx61dj5681g	2	16	)	)	PUNCT
sx61dj5681g	2	17	and	and	CCONJ
sx61dj5681g	2	18	kelvin	kelvin	PROPN
sx61dj5681g	2	19	force	force	PROPN
sx61dj5681g	2	20	probe	probe	NOUN
sx61dj5681g	2	21	microscopy	microscopy	NOUN
sx61dj5681g	2	22	(	(	PUNCT
sx61dj5681g	2	23	kfpm	kfpm	PROPN
sx61dj5681g	2	24	)	)	PUNCT
sx61dj5681g	2	25	.	.	PUNCT
sx61dj5681g	3	1	these	these	DET
sx61dj5681g	3	2	two	two	NUM
sx61dj5681g	3	3	methods	method	NOUN
sx61dj5681g	3	4	,	,	PUNCT
sx61dj5681g	3	5	however	however	ADV
sx61dj5681g	3	6	,	,	PUNCT
sx61dj5681g	3	7	require	require	VERB
sx61dj5681g	3	8	relatively	relatively	ADV
sx61dj5681g	3	9	large	large	ADJ
sx61dj5681g	3	10	potentials	potential	NOUN
sx61dj5681g	3	11	between	between	ADP
sx61dj5681g	3	12	the	the	DET
sx61dj5681g	3	13	tip	tip	NOUN
sx61dj5681g	3	14	and	and	CCONJ
sx61dj5681g	3	15	the	the	DET
sx61dj5681g	3	16	sample	sample	NOUN
sx61dj5681g	3	17	(	(	PUNCT
sx61dj5681g	3	18	1	1	NUM
sx61dj5681g	3	19	-	-	SYM
sx61dj5681g	3	20	3	3	NUM
sx61dj5681g	3	21	v	v	NOUN
sx61dj5681g	3	22	for	for	ADP
sx61dj5681g	3	23	kfpm	kfpm	PROPN
sx61dj5681g	3	24	)	)	PUNCT
sx61dj5681g	3	25	.	.	PUNCT
sx61dj5681g	4	1	such	such	ADJ
sx61dj5681g	4	2	large	large	ADJ
sx61dj5681g	4	3	potentials	potential	NOUN
sx61dj5681g	4	4	can	can	AUX
sx61dj5681g	4	5	distort	distort	VERB
sx61dj5681g	4	6	the	the	DET
sx61dj5681g	4	7	charge	charge	NOUN
sx61dj5681g	4	8	distribution	distribution	NOUN
sx61dj5681g	4	9	of	of	ADP
sx61dj5681g	4	10	the	the	DET
sx61dj5681g	4	11	surface	surface	NOUN
sx61dj5681g	4	12	to	to	PART
sx61dj5681g	4	13	be	be	AUX
sx61dj5681g	4	14	measured	measure	VERB
sx61dj5681g	4	15	.	.	PUNCT
sx61dj5681g	5	1	the	the	DET
sx61dj5681g	5	2	method	method	NOUN
sx61dj5681g	5	3	proposed	propose	VERB
sx61dj5681g	5	4	in	in	ADP
sx61dj5681g	5	5	this	this	DET
sx61dj5681g	5	6	dissertation	dissertation	NOUN
sx61dj5681g	5	7	work	work	NOUN
sx61dj5681g	5	8	will	will	AUX
sx61dj5681g	5	9	be	be	AUX
sx61dj5681g	5	10	to	to	PART
sx61dj5681g	5	11	implement	implement	VERB
sx61dj5681g	5	12	a	a	DET
sx61dj5681g	5	13	scanning	scan	VERB
sx61dj5681g	5	14	microscope	microscope	NOUN
sx61dj5681g	5	15	using	use	VERB
sx61dj5681g	5	16	single	single	ADJ
sx61dj5681g	5	17	-	-	PUNCT
sx61dj5681g	5	18	electron	electron	NOUN
sx61dj5681g	5	19	boxes	box	NOUN
sx61dj5681g	5	20	(	(	PUNCT
sx61dj5681g	5	21	sebs	sebs	NOUN
sx61dj5681g	5	22	)	)	PUNCT
sx61dj5681g	5	23	as	as	ADP
sx61dj5681g	5	24	the	the	DET
sx61dj5681g	5	25	primary	primary	ADJ
sx61dj5681g	5	26	charge	charge	NOUN
sx61dj5681g	5	27	/	/	SYM
sx61dj5681g	5	28	potential	potential	ADJ
sx61dj5681g	5	29	sensor	sensor	NOUN
sx61dj5681g	5	30	,	,	PUNCT
sx61dj5681g	5	31	as	as	SCONJ
sx61dj5681g	5	32	opposed	oppose	VERB
sx61dj5681g	5	33	to	to	ADP
sx61dj5681g	5	34	tip	tip	NOUN
sx61dj5681g	5	35	-	-	PUNCT
sx61dj5681g	5	36	sample	sample	NOUN
sx61dj5681g	5	37	interactions	interaction	NOUN
sx61dj5681g	5	38	used	use	VERB
sx61dj5681g	5	39	in	in	ADP
sx61dj5681g	5	40	efm	efm	PROPN
sx61dj5681g	5	41	and	and	CCONJ
sx61dj5681g	5	42	kfpm	kfpm	PROPN
sx61dj5681g	5	43	.	.	PUNCT
sx61dj5681g	6	1	sebs	sebs	PROPN
sx61dj5681g	6	2	operate	operate	VERB
sx61dj5681g	6	3	at	at	ADP
sx61dj5681g	6	4	very	very	ADV
sx61dj5681g	6	5	small	small	ADJ
sx61dj5681g	6	6	biases	bias	NOUN
sx61dj5681g	6	7	(	(	PUNCT
sx61dj5681g	6	8	typically	typically	ADV
sx61dj5681g	6	9	&	&	CCONJ
sx61dj5681g	6	10	lt	lt	PROPN
sx61dj5681g	6	11	;	;	PUNCT
sx61dj5681g	6	12	1	1	NUM
sx61dj5681g	6	13	mv	mv	PROPN
sx61dj5681g	6	14	)	)	PUNCT
sx61dj5681g	6	15	and	and	CCONJ
sx61dj5681g	6	16	are	be	AUX
sx61dj5681g	6	17	very	very	ADV
sx61dj5681g	6	18	sensitive	sensitive	ADJ
sx61dj5681g	6	19	to	to	PART
sx61dj5681g	6	20	charge	charge	VERB
sx61dj5681g	6	21	and	and	CCONJ
sx61dj5681g	6	22	voltage	voltage	NOUN
sx61dj5681g	6	23	fluctuations	fluctuation	NOUN
sx61dj5681g	6	24	.	.	PUNCT
sx61dj5681g	7	1	for	for	ADP
sx61dj5681g	7	2	these	these	DET
sx61dj5681g	7	3	reasons	reason	NOUN
sx61dj5681g	7	4	,	,	PUNCT
sx61dj5681g	7	5	implementing	implement	VERB
sx61dj5681g	7	6	a	a	DET
sx61dj5681g	7	7	scanning	scan	VERB
sx61dj5681g	7	8	seb	seb	X
sx61dj5681g	7	9	(	(	PUNCT
sx61dj5681g	7	10	s	s	NOUN
sx61dj5681g	7	11	-	-	PUNCT
sx61dj5681g	7	12	seb	seb	NOUN
sx61dj5681g	7	13	)	)	PUNCT
sx61dj5681g	7	14	probe	probe	NOUN
sx61dj5681g	7	15	can	can	AUX
sx61dj5681g	7	16	work	work	VERB
sx61dj5681g	7	17	around	around	ADP
sx61dj5681g	7	18	the	the	DET
sx61dj5681g	7	19	high	high	ADJ
sx61dj5681g	7	20	bias	bias	NOUN
sx61dj5681g	7	21	conditions	condition	NOUN
sx61dj5681g	7	22	required	require	VERB
sx61dj5681g	7	23	by	by	ADP
sx61dj5681g	7	24	efm	efm	PROPN
sx61dj5681g	7	25	and	and	CCONJ
sx61dj5681g	7	26	kfpm	kfpm	PROPN
sx61dj5681g	7	27	.	.	PUNCT
sx61dj5681g	8	1	in	in	ADP
sx61dj5681g	8	2	this	this	DET
sx61dj5681g	8	3	dissertation	dissertation	NOUN
sx61dj5681g	8	4	work	work	NOUN
sx61dj5681g	8	5	,	,	PUNCT
sx61dj5681g	8	6	a	a	PRON
sx61dj5681g	8	7	high	high	ADJ
sx61dj5681g	8	8	-	-	PUNCT
sx61dj5681g	8	9	resolution	resolution	NOUN
sx61dj5681g	8	10	,	,	PUNCT
sx61dj5681g	8	11	high	high	ADJ
sx61dj5681g	8	12	-	-	PUNCT
sx61dj5681g	8	13	sensitivity	sensitivity	NOUN
sx61dj5681g	8	14	s	s	NOUN
sx61dj5681g	8	15	-	-	PUNCT
sx61dj5681g	8	16	seb	seb	PROPN
sx61dj5681g	8	17	has	have	AUX
sx61dj5681g	8	18	been	be	AUX
sx61dj5681g	8	19	designed	design	VERB
sx61dj5681g	8	20	and	and	CCONJ
sx61dj5681g	8	21	fabricated	fabricate	VERB
sx61dj5681g	8	22	by	by	ADP
sx61dj5681g	8	23	implementing	implement	VERB
sx61dj5681g	8	24	parallel	parallel	ADJ
sx61dj5681g	8	25	sebs	sebs	NOUN
sx61dj5681g	8	26	with	with	ADP
sx61dj5681g	8	27	large	large	ADJ
sx61dj5681g	8	28	charging	charge	VERB
sx61dj5681g	8	29	energy	energy	NOUN
sx61dj5681g	8	30	(	(	PUNCT
sx61dj5681g	8	31	~	~	PROPN
sx61dj5681g	8	32	10	10	NUM
sx61dj5681g	8	33	mev	mev	PROPN
sx61dj5681g	8	34	)	)	PUNCT
sx61dj5681g	8	35	,	,	PUNCT
sx61dj5681g	8	36	measured	measure	VERB
sx61dj5681g	8	37	using	use	VERB
sx61dj5681g	8	38	radio	radio	NOUN
sx61dj5681g	8	39	-	-	PUNCT
sx61dj5681g	8	40	frequency	frequency	NOUN
sx61dj5681g	8	41	reflectometry	reflectometry	NOUN
sx61dj5681g	8	42	,	,	PUNCT
sx61dj5681g	8	43	and	and	CCONJ
sx61dj5681g	8	44	using	use	VERB
sx61dj5681g	8	45	a	a	DET
sx61dj5681g	8	46	silicon	silicon	NOUN
sx61dj5681g	8	47	nitride	nitride	PROPN
sx61dj5681g	8	48	membrane	membrane	NOUN
sx61dj5681g	8	49	tip	tip	NOUN
sx61dj5681g	8	50	.	.	PUNCT