id	sid	tid	token	lemma	pos
st74cn7346c	1	1	advancing	advance	VERB
st74cn7346c	1	2	the	the	DET
st74cn7346c	1	3	development	development	NOUN
st74cn7346c	1	4	of	of	ADP
st74cn7346c	1	5	cheaper	cheap	ADJ
st74cn7346c	1	6	and	and	CCONJ
st74cn7346c	1	7	faster	fast	ADJ
st74cn7346c	1	8	photonic	photonic	ADJ
st74cn7346c	1	9	integrated	integrate	VERB
st74cn7346c	1	10	circuits	circuit	NOUN
st74cn7346c	1	11	(	(	PUNCT
st74cn7346c	1	12	pics	pic	NOUN
st74cn7346c	1	13	)	)	PUNCT
st74cn7346c	1	14	requires	require	VERB
st74cn7346c	1	15	strong	strong	ADJ
st74cn7346c	1	16	optical	optical	ADJ
st74cn7346c	1	17	confinement	confinement	NOUN
st74cn7346c	1	18	,	,	PUNCT
st74cn7346c	1	19	low	low	ADJ
st74cn7346c	1	20	bend	bend	NOUN
st74cn7346c	1	21	loss	loss	NOUN
st74cn7346c	1	22	waveguides	waveguide	NOUN
st74cn7346c	1	23	in	in	ADP
st74cn7346c	1	24	order	order	NOUN
st74cn7346c	1	25	to	to	PART
st74cn7346c	1	26	shrink	shrink	VERB
st74cn7346c	1	27	component	component	NOUN
st74cn7346c	1	28	size	size	NOUN
st74cn7346c	1	29	and	and	CCONJ
st74cn7346c	1	30	increase	increase	VERB
st74cn7346c	1	31	integration	integration	NOUN
st74cn7346c	1	32	density	density	NOUN
st74cn7346c	1	33	.	.	PUNCT
st74cn7346c	2	1	addressing	address	VERB
st74cn7346c	2	2	this	this	DET
st74cn7346c	2	3	need	need	NOUN
st74cn7346c	2	4	,	,	PUNCT
st74cn7346c	2	5	a	a	DET
st74cn7346c	2	6	self	self	NOUN
st74cn7346c	2	7	-	-	PUNCT
st74cn7346c	2	8	aligned	align	VERB
st74cn7346c	2	9	process	process	NOUN
st74cn7346c	2	10	utilizing	utilize	VERB
st74cn7346c	2	11	the	the	DET
st74cn7346c	2	12	oxygen	oxygen	NOUN
st74cn7346c	2	13	-	-	PUNCT
st74cn7346c	2	14	enhanced	enhance	VERB
st74cn7346c	2	15	wet	wet	ADJ
st74cn7346c	2	16	thermal	thermal	ADJ
st74cn7346c	2	17	oxidation	oxidation	NOUN
st74cn7346c	2	18	(	(	PUNCT
st74cn7346c	2	19	oewto	oewto	PROPN
st74cn7346c	2	20	)	)	PUNCT
st74cn7346c	2	21	technique	technique	NOUN
st74cn7346c	2	22	developed	develop	VERB
st74cn7346c	2	23	at	at	ADP
st74cn7346c	2	24	the	the	DET
st74cn7346c	2	25	university	university	PROPN
st74cn7346c	2	26	of	of	ADP
st74cn7346c	2	27	notre	notre	PROPN
st74cn7346c	2	28	dame	dame	NOUN
st74cn7346c	2	29	has	have	AUX
st74cn7346c	2	30	been	be	AUX
st74cn7346c	2	31	successfully	successfully	ADV
st74cn7346c	2	32	applied	apply	VERB
st74cn7346c	2	33	to	to	PART
st74cn7346c	2	34	realize	realize	VERB
st74cn7346c	2	35	deeply	deeply	ADV
st74cn7346c	2	36	-	-	PUNCT
st74cn7346c	2	37	etched	etch	VERB
st74cn7346c	2	38	oxide	oxide	NOUN
st74cn7346c	2	39	-	-	PUNCT
st74cn7346c	2	40	confined	confine	VERB
st74cn7346c	2	41	gaas	gaas	NOUN
st74cn7346c	2	42	-	-	PUNCT
st74cn7346c	2	43	based	base	VERB
st74cn7346c	2	44	high	high	ADJ
st74cn7346c	2	45	-	-	PUNCT
st74cn7346c	2	46	index	index	NOUN
st74cn7346c	2	47	-	-	PUNCT
st74cn7346c	2	48	contrast	contrast	NOUN
st74cn7346c	2	49	(	(	PUNCT
st74cn7346c	2	50	hic	hic	PROPN
st74cn7346c	2	51	)	)	PUNCT
st74cn7346c	2	52	ridge	ridge	PROPN
st74cn7346c	2	53	waveguide	waveguide	NOUN
st74cn7346c	2	54	(	(	PUNCT
st74cn7346c	2	55	rwg	rwg	PROPN
st74cn7346c	2	56	)	)	PUNCT
st74cn7346c	2	57	structures	structure	NOUN
st74cn7346c	2	58	enabling	enable	VERB
st74cn7346c	2	59	lasers	laser	NOUN
st74cn7346c	2	60	with	with	ADP
st74cn7346c	2	61	promising	promising	ADJ
st74cn7346c	2	62	performance	performance	NOUN
st74cn7346c	2	63	attributes	attribute	NOUN
st74cn7346c	2	64	.	.	PUNCT
st74cn7346c	3	1	in	in	ADP
st74cn7346c	3	2	this	this	DET
st74cn7346c	3	3	work	work	NOUN
st74cn7346c	3	4	,	,	PUNCT
st74cn7346c	3	5	especially	especially	ADV
st74cn7346c	3	6	uniform	uniform	NOUN
st74cn7346c	3	7	,	,	PUNCT
st74cn7346c	3	8	low	low	ADJ
st74cn7346c	3	9	surface	surface	NOUN
st74cn7346c	3	10	roughness	roughness	NOUN
st74cn7346c	3	11	(	(	PUNCT
st74cn7346c	3	12	0.2	0.2	NUM
st74cn7346c	3	13	nm	nm	NOUN
st74cn7346c	3	14	)	)	PUNCT
st74cn7346c	3	15	and	and	CCONJ
st74cn7346c	3	16	low	low	ADJ
st74cn7346c	3	17	interface	interface	NOUN
st74cn7346c	3	18	roughness	roughness	NOUN
st74cn7346c	3	19	(	(	PUNCT
st74cn7346c	3	20	2.3	2.3	NUM
st74cn7346c	3	21	nm	nm	NOUN
st74cn7346c	3	22	)	)	PUNCT
st74cn7346c	3	23	native	native	ADJ
st74cn7346c	3	24	oxides	oxide	NOUN
st74cn7346c	3	25	grown	grow	VERB
st74cn7346c	3	26	directly	directly	ADV
st74cn7346c	3	27	on	on	ADP
st74cn7346c	3	28	gaas	gaas	NOUN
st74cn7346c	3	29	are	be	AUX
st74cn7346c	3	30	achieved	achieve	VERB
st74cn7346c	3	31	,	,	PUNCT
st74cn7346c	3	32	with	with	ADP
st74cn7346c	3	33	highly	highly	ADV
st74cn7346c	3	34	specular	specular	ADJ
st74cn7346c	3	35	optical	optical	ADJ
st74cn7346c	3	36	properties	property	NOUN
st74cn7346c	3	37	demonstrated	demonstrate	VERB
st74cn7346c	3	38	by	by	ADP
st74cn7346c	3	39	the	the	DET
st74cn7346c	3	40	excellent	excellent	ADJ
st74cn7346c	3	41	performance	performance	NOUN
st74cn7346c	3	42	of	of	ADP
st74cn7346c	3	43	a	a	DET
st74cn7346c	3	44	quarter	quarter	NOUN
st74cn7346c	3	45	wave	wave	NOUN
st74cn7346c	3	46	optical	optical	ADJ
st74cn7346c	3	47	thickness	thickness	NOUN
st74cn7346c	3	48	antireflection	antireflection	NOUN
st74cn7346c	3	49	layer	layer	NOUN
st74cn7346c	3	50	.	.	PUNCT
st74cn7346c	4	1	through	through	ADP
st74cn7346c	4	2	extensive	extensive	ADJ
st74cn7346c	4	3	optimization	optimization	NOUN
st74cn7346c	4	4	of	of	ADP
st74cn7346c	4	5	lithography	lithography	NOUN
st74cn7346c	4	6	,	,	PUNCT
st74cn7346c	4	7	etching	etching	NOUN
st74cn7346c	4	8	and	and	CCONJ
st74cn7346c	4	9	oewto	oewto	PROPN
st74cn7346c	4	10	processes	process	NOUN
st74cn7346c	4	11	,	,	PUNCT
st74cn7346c	4	12	single	single	ADJ
st74cn7346c	4	13	mode	mode	NOUN
st74cn7346c	4	14	hic	hic	PROPN
st74cn7346c	4	15	rwg	rwg	PROPN
st74cn7346c	4	16	diode	diode	NOUN
st74cn7346c	4	17	lasers	laser	NOUN
st74cn7346c	4	18	are	be	AUX
st74cn7346c	4	19	demonstrated	demonstrate	VERB
st74cn7346c	4	20	for	for	ADP
st74cn7346c	4	21	the	the	DET
st74cn7346c	4	22	first	first	ADJ
st74cn7346c	4	23	time	time	NOUN
st74cn7346c	4	24	.	.	PUNCT
st74cn7346c	5	1	oxidation	oxidation	NOUN
st74cn7346c	5	2	smoothing	smoothing	NOUN
st74cn7346c	5	3	of	of	ADP
st74cn7346c	5	4	the	the	DET
st74cn7346c	5	5	semiconductor	semiconductor	NOUN
st74cn7346c	5	6	/	/	SYM
st74cn7346c	5	7	oxide	oxide	NOUN
st74cn7346c	5	8	interface	interface	NOUN
st74cn7346c	5	9	sidewall	sidewall	NOUN
st74cn7346c	5	10	roughness	roughness	NOUN
st74cn7346c	5	11	along	along	ADP
st74cn7346c	5	12	the	the	DET
st74cn7346c	5	13	propagation	propagation	NOUN
st74cn7346c	5	14	direction	direction	NOUN
st74cn7346c	5	15	of	of	ADP
st74cn7346c	5	16	oxide	oxide	NOUN
st74cn7346c	5	17	-	-	PUNCT
st74cn7346c	5	18	confined	confine	VERB
st74cn7346c	5	19	hic	hic	PROPN
st74cn7346c	5	20	rwg	rwg	PROPN
st74cn7346c	5	21	structures	structure	NOUN
st74cn7346c	5	22	is	be	AUX
st74cn7346c	5	23	directly	directly	ADV
st74cn7346c	5	24	observed	observe	VERB
st74cn7346c	5	25	through	through	ADP
st74cn7346c	5	26	focused	focus	VERB
st74cn7346c	5	27	ion	ion	NOUN
st74cn7346c	5	28	beam	beam	NOUN
st74cn7346c	5	29	milling	milling	NOUN
st74cn7346c	5	30	and	and	CCONJ
st74cn7346c	5	31	electron	electron	NOUN
st74cn7346c	5	32	microscopy	microscopy	NOUN
st74cn7346c	5	33	.	.	PUNCT
st74cn7346c	6	1	high	high	ADJ
st74cn7346c	6	2	external	external	ADJ
st74cn7346c	6	3	differential	differential	ADJ
st74cn7346c	6	4	quantum	quantum	NOUN
st74cn7346c	6	5	efficiency	efficiency	NOUN
st74cn7346c	6	6	(	(	PUNCT
st74cn7346c	6	7	65	65	NUM
st74cn7346c	6	8	%	%	NOUN
st74cn7346c	6	9	)	)	PUNCT
st74cn7346c	6	10	,	,	PUNCT
st74cn7346c	6	11	stable	stable	ADJ
st74cn7346c	6	12	single	single	ADJ
st74cn7346c	6	13	-	-	PUNCT
st74cn7346c	6	14	mode	mode	NOUN
st74cn7346c	6	15	,	,	PUNCT
st74cn7346c	6	16	high	high	ADJ
st74cn7346c	6	17	beam	beam	NOUN
st74cn7346c	6	18	quality	quality	NOUN
st74cn7346c	6	19	(	(	PUNCT
st74cn7346c	6	20	m^2~1.2	m^2~1.2	PROPN
st74cn7346c	6	21	)	)	PUNCT
st74cn7346c	6	22	,	,	PUNCT
st74cn7346c	6	23	~880	~880	PROPN
st74cn7346c	6	24	nm	nm	NOUN
st74cn7346c	6	25	wavelength	wavelength	NOUN
st74cn7346c	6	26	graded	grade	VERB
st74cn7346c	6	27	index	index	NOUN
st74cn7346c	6	28	separate	separate	ADJ
st74cn7346c	6	29	confinement	confinement	NOUN
st74cn7346c	6	30	heterostructure	heterostructure	NOUN
st74cn7346c	6	31	(	(	PUNCT
st74cn7346c	6	32	grinsch	grinsch	PROPN
st74cn7346c	6	33	)	)	PUNCT
st74cn7346c	6	34	hic	hic	PROPN
st74cn7346c	6	35	rwg	rwg	PROPN
st74cn7346c	6	36	laser	laser	NOUN
st74cn7346c	6	37	diodes	diode	NOUN
st74cn7346c	6	38	are	be	AUX
st74cn7346c	6	39	fabricated	fabricate	VERB
st74cn7346c	6	40	and	and	CCONJ
st74cn7346c	6	41	characterized	characterize	VERB
st74cn7346c	6	42	.	.	PUNCT
st74cn7346c	7	1	notably	notably	ADV
st74cn7346c	7	2	,	,	PUNCT
st74cn7346c	7	3	a	a	DET
st74cn7346c	7	4	circularly	circularly	ADV
st74cn7346c	7	5	symmetric	symmetric	ADJ
st74cn7346c	7	6	output	output	NOUN
st74cn7346c	7	7	beam	beam	NOUN
st74cn7346c	7	8	hic	hic	PROPN
st74cn7346c	7	9	rwg	rwg	PROPN
st74cn7346c	7	10	laser	laser	NOUN
st74cn7346c	7	11	is	be	AUX
st74cn7346c	7	12	achieved	achieve	VERB
st74cn7346c	7	13	for	for	ADP
st74cn7346c	7	14	the	the	DET
st74cn7346c	7	15	first	first	ADJ
st74cn7346c	7	16	time	time	NOUN
st74cn7346c	7	17	,	,	PUNCT
st74cn7346c	7	18	overcoming	overcome	VERB
st74cn7346c	7	19	the	the	DET
st74cn7346c	7	20	traditional	traditional	ADJ
st74cn7346c	7	21	asymmetric	asymmetric	NOUN
st74cn7346c	7	22	,	,	PUNCT
st74cn7346c	7	23	highly	highly	ADV
st74cn7346c	7	24	elliptical	elliptical	ADJ
st74cn7346c	7	25	beam	beam	NOUN
st74cn7346c	7	26	divergence	divergence	NOUN
st74cn7346c	7	27	limitation	limitation	NOUN
st74cn7346c	7	28	of	of	ADP
st74cn7346c	7	29	edge	edge	NOUN
st74cn7346c	7	30	-	-	PUNCT
st74cn7346c	7	31	emitting	emit	VERB
st74cn7346c	7	32	lasers	laser	NOUN
st74cn7346c	7	33	and	and	CCONJ
st74cn7346c	7	34	well	well	ADV
st74cn7346c	7	35	surpassing	surpass	VERB
st74cn7346c	7	36	the	the	DET
st74cn7346c	7	37	~2	~2	ADJ
st74cn7346c	7	38	mw	mw	PROPN
st74cn7346c	7	39	maximum	maximum	ADJ
st74cn7346c	7	40	power	power	NOUN
st74cn7346c	7	41	of	of	ADP
st74cn7346c	7	42	current	current	ADJ
st74cn7346c	7	43	symmetric	symmetric	ADJ
st74cn7346c	7	44	single	single	ADJ
st74cn7346c	7	45	mode	mode	NOUN
st74cn7346c	7	46	vertical	vertical	ADJ
st74cn7346c	7	47	cavity	cavity	NOUN
st74cn7346c	7	48	surface	surface	NOUN
st74cn7346c	7	49	emitting	emit	VERB
st74cn7346c	7	50	lasers	laser	NOUN
st74cn7346c	7	51	.	.	PUNCT
st74cn7346c	8	1	this	this	DET
st74cn7346c	8	2	single	single	ADJ
st74cn7346c	8	3	mode	mode	NOUN
st74cn7346c	8	4	device	device	NOUN
st74cn7346c	8	5	exhibits	exhibit	VERB
st74cn7346c	8	6	a	a	DET
st74cn7346c	8	7	total	total	ADJ
st74cn7346c	8	8	optical	optical	ADJ
st74cn7346c	8	9	output	output	NOUN
st74cn7346c	8	10	power	power	NOUN
st74cn7346c	8	11	as	as	ADV
st74cn7346c	8	12	high	high	ADJ
st74cn7346c	8	13	as	as	ADP
st74cn7346c	8	14	101	101	NUM
st74cn7346c	8	15	mw	mw	NOUN
st74cn7346c	8	16	,	,	PUNCT
st74cn7346c	8	17	with	with	ADP
st74cn7346c	8	18	a	a	DET
st74cn7346c	8	19	threshold	threshold	NOUN
st74cn7346c	8	20	current	current	NOUN
st74cn7346c	8	21	of	of	ADP
st74cn7346c	8	22	81	81	NUM
st74cn7346c	8	23	ma	ma	PROPN
st74cn7346c	8	24	and	and	CCONJ
st74cn7346c	8	25	slope	slope	PROPN
st74cn7346c	8	26	efficiency	efficiency	NOUN
st74cn7346c	8	27	of	of	ADP
st74cn7346c	8	28	0.92	0.92	NUM
st74cn7346c	8	29	w	w	PROPN
st74cn7346c	8	30	/	/	SYM
st74cn7346c	8	31	a	a	NOUN
st74cn7346c	8	32	(	(	PUNCT
st74cn7346c	8	33	without	without	ADP
st74cn7346c	8	34	heatsinking	heatsinke	VERB
st74cn7346c	8	35	and	and	CCONJ
st74cn7346c	8	36	under	under	ADP
st74cn7346c	8	37	pulsed	pulsed	ADJ
st74cn7346c	8	38	operation	operation	NOUN
st74cn7346c	8	39	)	)	PUNCT
st74cn7346c	8	40	.	.	PUNCT
st74cn7346c	9	1	the	the	DET
st74cn7346c	9	2	oxide	oxide	NOUN
st74cn7346c	9	3	-	-	PUNCT
st74cn7346c	9	4	confined	confine	VERB
st74cn7346c	9	5	deeply	deeply	ADV
st74cn7346c	9	6	-	-	PUNCT
st74cn7346c	9	7	etched	etch	VERB
st74cn7346c	9	8	3.25	3.25	NUM
st74cn7346c	9	9	µm	µm	NOUN
st74cn7346c	9	10	wide	wide	ADJ
st74cn7346c	9	11	ridge	ridge	NOUN
st74cn7346c	9	12	produces	produce	VERB
st74cn7346c	9	13	a	a	DET
st74cn7346c	9	14	single	single	ADJ
st74cn7346c	9	15	mode	mode	NOUN
st74cn7346c	9	16	laser	laser	NOUN
st74cn7346c	9	17	with	with	ADP
st74cn7346c	9	18	a	a	DET
st74cn7346c	9	19	1.88	1.88	NUM
st74cn7346c	9	20	µm	µm	NOUN
st74cn7346c	9	21	1	1	NUM
st74cn7346c	9	22	/	/	SYM
st74cn7346c	9	23	e^2	e^2	PROPN
st74cn7346c	9	24	near	near	ADJ
st74cn7346c	9	25	-	-	PUNCT
st74cn7346c	9	26	field	field	NOUN
st74cn7346c	9	27	mode	mode	NOUN
st74cn7346c	9	28	width	width	NOUN
st74cn7346c	9	29	and	and	CCONJ
st74cn7346c	9	30	full	full	ADJ
st74cn7346c	9	31	width	width	NOUN
st74cn7346c	9	32	half	half	ADV
st74cn7346c	9	33	maximum	maximum	ADJ
st74cn7346c	9	34	(	(	PUNCT
st74cn7346c	9	35	fwhm	fwhm	PROPN
st74cn7346c	9	36	)	)	PUNCT
st74cn7346c	9	37	far	far	ADV
st74cn7346c	9	38	field	field	NOUN
st74cn7346c	9	39	divergence	divergence	NOUN
st74cn7346c	9	40	of	of	ADP
st74cn7346c	9	41	29.95	29.95	NUM
st74cn7346c	9	42	°	°	NOUN
st74cn7346c	9	43	and	and	CCONJ
st74cn7346c	9	44	29.71	29.71	NUM
st74cn7346c	9	45	°	°	NOUN
st74cn7346c	9	46	in	in	ADP
st74cn7346c	9	47	the	the	DET
st74cn7346c	9	48	fast	fast	ADJ
st74cn7346c	9	49	and	and	CCONJ
st74cn7346c	9	50	slow	slow	ADJ
st74cn7346c	9	51	axes	axis	NOUN
st74cn7346c	9	52	,	,	PUNCT
st74cn7346c	9	53	respectively	respectively	ADV
st74cn7346c	9	54	.	.	PUNCT
st74cn7346c	10	1	with	with	ADP
st74cn7346c	10	2	detailed	detailed	ADJ
st74cn7346c	10	3	stripe	stripe	NOUN
st74cn7346c	10	4	width	width	NOUN
st74cn7346c	10	5	dependence	dependence	NOUN
st74cn7346c	10	6	studies	study	NOUN
st74cn7346c	10	7	,	,	PUNCT
st74cn7346c	10	8	we	we	PRON
st74cn7346c	10	9	highlight	highlight	VERB
st74cn7346c	10	10	the	the	DET
st74cn7346c	10	11	performance	performance	NOUN
st74cn7346c	10	12	improvements	improvement	NOUN
st74cn7346c	10	13	relative	relative	ADJ
st74cn7346c	10	14	to	to	ADP
st74cn7346c	10	15	our	our	PRON
st74cn7346c	10	16	prior	prior	ADJ
st74cn7346c	10	17	oxide	oxide	NOUN
st74cn7346c	10	18	-	-	PUNCT
st74cn7346c	10	19	confined	confine	VERB
st74cn7346c	10	20	hic	hic	PROPN
st74cn7346c	10	21	rwg	rwg	PROPN
st74cn7346c	10	22	devices	device	NOUN
st74cn7346c	10	23	and	and	CCONJ
st74cn7346c	10	24	fully	fully	ADV
st74cn7346c	10	25	characterize	characterize	VERB
st74cn7346c	10	26	the	the	DET
st74cn7346c	10	27	multi	multi	NOUN
st74cn7346c	10	28	-	-	ADJ
st74cn7346c	10	29	mode	mode	NOUN
st74cn7346c	10	30	to	to	ADP
st74cn7346c	10	31	single	single	ADJ
st74cn7346c	10	32	-	-	PUNCT
st74cn7346c	10	33	mode	mode	NOUN
st74cn7346c	10	34	transition	transition	NOUN
st74cn7346c	10	35	behavior	behavior	NOUN
st74cn7346c	10	36	.	.	PUNCT
st74cn7346c	11	1	wider	wide	ADJ
st74cn7346c	11	2	4.5	4.5	NUM
st74cn7346c	11	3	µm	µm	PROPN
st74cn7346c	11	4	ridge	ridge	NOUN
st74cn7346c	11	5	width	width	NOUN
st74cn7346c	11	6	devices	device	NOUN
st74cn7346c	11	7	are	be	AUX
st74cn7346c	11	8	observed	observe	VERB
st74cn7346c	11	9	to	to	PART
st74cn7346c	11	10	operate	operate	VERB
st74cn7346c	11	11	with	with	ADP
st74cn7346c	11	12	single	single	ADJ
st74cn7346c	11	13	spatial	spatial	ADJ
st74cn7346c	11	14	mode	mode	NOUN
st74cn7346c	11	15	output	output	NOUN
st74cn7346c	11	16	powers	power	NOUN
st74cn7346c	11	17	up	up	ADP
st74cn7346c	11	18	to	to	ADP
st74cn7346c	11	19	166	166	NUM
st74cn7346c	11	20	mw	mw	NOUN
st74cn7346c	11	21	.	.	PROPN
st74cn7346c	12	1	finally	finally	ADV
st74cn7346c	12	2	,	,	PUNCT
st74cn7346c	12	3	significant	significant	ADJ
st74cn7346c	12	4	optimization	optimization	NOUN
st74cn7346c	12	5	of	of	ADP
st74cn7346c	12	6	the	the	DET
st74cn7346c	12	7	oewto	oewto	PROPN
st74cn7346c	12	8	process	process	NOUN
st74cn7346c	12	9	for	for	ADP
st74cn7346c	12	10	ingaas	ingaas	NOUN
st74cn7346c	12	11	and	and	CCONJ
st74cn7346c	12	12	inp	inp	PROPN
st74cn7346c	12	13	-	-	PUNCT
st74cn7346c	12	14	based	base	VERB
st74cn7346c	12	15	laser	laser	NOUN
st74cn7346c	12	16	heterostructures	heterostructure	NOUN
st74cn7346c	12	17	is	be	AUX
st74cn7346c	12	18	also	also	ADV
st74cn7346c	12	19	demonstrated	demonstrate	VERB
st74cn7346c	12	20	.	.	PUNCT
st74cn7346c	13	1	most	most	ADJ
st74cn7346c	13	2	of	of	ADP
st74cn7346c	13	3	the	the	DET
st74cn7346c	13	4	processes	process	NOUN
st74cn7346c	13	5	required	require	VERB
st74cn7346c	13	6	to	to	PART
st74cn7346c	13	7	apply	apply	VERB
st74cn7346c	13	8	the	the	DET
st74cn7346c	13	9	oewto	oewto	PROPN
st74cn7346c	13	10	process	process	NOUN
st74cn7346c	13	11	to	to	ADP
st74cn7346c	13	12	the	the	DET
st74cn7346c	13	13	fabrication	fabrication	NOUN
st74cn7346c	13	14	of	of	ADP
st74cn7346c	13	15	inp	inp	PROPN
st74cn7346c	13	16	-	-	PUNCT
st74cn7346c	13	17	based	base	VERB
st74cn7346c	13	18	quantum	quantum	PROPN
st74cn7346c	13	19	cascade	cascade	NOUN
st74cn7346c	13	20	lasers	laser	NOUN
st74cn7346c	13	21	(	(	PUNCT
st74cn7346c	13	22	qcls	qcls	PROPN
st74cn7346c	13	23	)	)	PUNCT
st74cn7346c	13	24	have	have	AUX
st74cn7346c	13	25	been	be	AUX
st74cn7346c	13	26	fully	fully	ADV
st74cn7346c	13	27	explored	explore	VERB
st74cn7346c	13	28	and	and	CCONJ
st74cn7346c	13	29	implemented	implement	VERB
st74cn7346c	13	30	,	,	PUNCT
st74cn7346c	13	31	with	with	ADP
st74cn7346c	13	32	issues	issue	NOUN
st74cn7346c	13	33	regarding	regard	VERB
st74cn7346c	13	34	a	a	DET
st74cn7346c	13	35	remaining	remain	VERB
st74cn7346c	13	36	contact	contact	NOUN
st74cn7346c	13	37	window	window	NOUN
st74cn7346c	13	38	etch	etch	NOUN
st74cn7346c	13	39	process	process	NOUN
st74cn7346c	13	40	characterized	characterize	VERB
st74cn7346c	13	41	and	and	CCONJ
st74cn7346c	13	42	discussed	discuss	VERB
st74cn7346c	13	43	.	.	PUNCT