id	sid	tid	token	lemma	pos
s4655d8932r	1	1	the	the	DET
s4655d8932r	1	2	quantum	quantum	NOUN
s4655d8932r	1	3	-	-	PUNCT
s4655d8932r	1	4	dot	dot	NOUN
s4655d8932r	1	5	cellular	cellular	NOUN
s4655d8932r	1	6	automata	automata	PROPN
s4655d8932r	1	7	(	(	PUNCT
s4655d8932r	1	8	qca	qca	PROPN
s4655d8932r	1	9	)	)	PUNCT
s4655d8932r	1	10	scheme	scheme	NOUN
s4655d8932r	1	11	is	be	AUX
s4655d8932r	1	12	a	a	DET
s4655d8932r	1	13	promising	promising	ADJ
s4655d8932r	1	14	replacement	replacement	NOUN
s4655d8932r	1	15	for	for	ADP
s4655d8932r	1	16	current	current	ADJ
s4655d8932r	1	17	cmos	cmos	NOUN
s4655d8932r	1	18	technology	technology	NOUN
s4655d8932r	1	19	.	.	PUNCT
s4655d8932r	2	1	patterning	pattern	VERB
s4655d8932r	2	2	qca	qca	PROPN
s4655d8932r	2	3	molecules	molecules	PROPN
s4655d8932r	2	4	on	on	ADP
s4655d8932r	2	5	a	a	DET
s4655d8932r	2	6	surface	surface	NOUN
s4655d8932r	2	7	in	in	ADP
s4655d8932r	2	8	a	a	DET
s4655d8932r	2	9	controlled	control	VERB
s4655d8932r	2	10	manner	manner	NOUN
s4655d8932r	2	11	is	be	AUX
s4655d8932r	2	12	one	one	NUM
s4655d8932r	2	13	of	of	ADP
s4655d8932r	2	14	the	the	DET
s4655d8932r	2	15	fundamental	fundamental	ADJ
s4655d8932r	2	16	research	research	NOUN
s4655d8932r	2	17	topics	topic	NOUN
s4655d8932r	2	18	for	for	ADP
s4655d8932r	2	19	the	the	DET
s4655d8932r	2	20	realization	realization	NOUN
s4655d8932r	2	21	of	of	ADP
s4655d8932r	2	22	room	room	NOUN
s4655d8932r	2	23	temperature	temperature	NOUN
s4655d8932r	2	24	operation	operation	NOUN
s4655d8932r	2	25	of	of	ADP
s4655d8932r	2	26	qca	qca	PROPN
s4655d8932r	2	27	computing	computing	PROPN
s4655d8932r	2	28	.	.	PUNCT
s4655d8932r	3	1	the	the	DET
s4655d8932r	3	2	water	water	NOUN
s4655d8932r	3	3	-	-	PUNCT
s4655d8932r	3	4	soluble	soluble	ADJ
s4655d8932r	3	5	creutz	creutz	ADJ
s4655d8932r	3	6	-	-	PUNCT
s4655d8932r	3	7	taube	taube	NOUN
s4655d8932r	3	8	molecule	molecule	NOUN
s4655d8932r	3	9	[	[	PUNCT
s4655d8932r	3	10	(	(	PUNCT
s4655d8932r	3	11	nh3)5ru(pyrazine)ru(nh3)5](o	nh3)5ru(pyrazine)ru(nh3)5](o	SPACE
s4655d8932r	3	12	-	-	PUNCT
s4655d8932r	3	13	toluenesulphonate)5	toluenesulphonate)5	PRON
s4655d8932r	3	14	(	(	PUNCT
s4655d8932r	3	15	ct5	ct5	NOUN
s4655d8932r	3	16	)	)	PUNCT
s4655d8932r	3	17	,	,	PUNCT
s4655d8932r	3	18	was	be	AUX
s4655d8932r	3	19	successfully	successfully	ADV
s4655d8932r	3	20	patterned	pattern	VERB
s4655d8932r	3	21	on	on	ADP
s4655d8932r	3	22	sio2	sio2	PRON
s4655d8932r	3	23	surfaces	surface	NOUN
s4655d8932r	3	24	by	by	ADP
s4655d8932r	3	25	a	a	DET
s4655d8932r	3	26	new	new	ADJ
s4655d8932r	3	27	molecular	molecular	ADJ
s4655d8932r	3	28	liftoff	liftoff	NOUN
s4655d8932r	3	29	technique	technique	NOUN
s4655d8932r	3	30	.	.	PUNCT
s4655d8932r	4	1	patterned	pattern	VERB
s4655d8932r	4	2	ct5	ct5	VERB
s4655d8932r	4	3	molecules	molecule	NOUN
s4655d8932r	4	4	formed	form	VERB
s4655d8932r	4	5	as	as	ADP
s4655d8932r	4	6	monolayers	monolayer	NOUN
s4655d8932r	4	7	with	with	ADP
s4655d8932r	4	8	two	two	NUM
s4655d8932r	4	9	ru	ru	NOUN
s4655d8932r	4	10	atoms	atom	NOUN
s4655d8932r	4	11	lying	lie	VERB
s4655d8932r	4	12	down	down	ADP
s4655d8932r	4	13	on	on	ADP
s4655d8932r	4	14	the	the	DET
s4655d8932r	4	15	surface	surface	NOUN
s4655d8932r	4	16	.	.	PUNCT
s4655d8932r	5	1	the	the	DET
s4655d8932r	5	2	finest	fine	ADJ
s4655d8932r	5	3	ct5	ct5	NOUN
s4655d8932r	5	4	nanolines	nanoline	NOUN
s4655d8932r	5	5	demonstrated	demonstrate	VERB
s4655d8932r	5	6	were	be	AUX
s4655d8932r	5	7	around	around	ADV
s4655d8932r	5	8	15	15	NUM
s4655d8932r	5	9	nm	nm	NOUN
s4655d8932r	5	10	after	after	ADP
s4655d8932r	5	11	deconvolution	deconvolution	NOUN
s4655d8932r	5	12	of	of	ADP
s4655d8932r	5	13	the	the	DET
s4655d8932r	5	14	tip	tip	NOUN
s4655d8932r	5	15	size	size	NOUN
s4655d8932r	5	16	effect	effect	NOUN
s4655d8932r	5	17	.	.	PUNCT
s4655d8932r	6	1	for	for	ADP
s4655d8932r	6	2	molecular	molecular	ADJ
s4655d8932r	6	3	nanopatterning	nanopatterning	NOUN
s4655d8932r	6	4	,	,	PUNCT
s4655d8932r	6	5	surface	surface	NOUN
s4655d8932r	6	6	cleanliness	cleanliness	NOUN
s4655d8932r	6	7	is	be	AUX
s4655d8932r	6	8	critical	critical	ADJ
s4655d8932r	6	9	for	for	ADP
s4655d8932r	6	10	molecular	molecular	ADJ
s4655d8932r	6	11	deposition	deposition	NOUN
s4655d8932r	6	12	and	and	CCONJ
s4655d8932r	6	13	the	the	DET
s4655d8932r	6	14	investigation	investigation	NOUN
s4655d8932r	6	15	of	of	ADP
s4655d8932r	6	16	deposited	deposit	VERB
s4655d8932r	6	17	molecular	molecular	ADJ
s4655d8932r	6	18	patterns	pattern	NOUN
s4655d8932r	6	19	.	.	PUNCT
s4655d8932r	7	1	surface	surface	NOUN
s4655d8932r	7	2	cleaning	cleaning	NOUN
s4655d8932r	7	3	methods	method	NOUN
s4655d8932r	7	4	were	be	AUX
s4655d8932r	7	5	compared	compare	VERB
s4655d8932r	7	6	before	before	ADP
s4655d8932r	7	7	resist	resist	NOUN
s4655d8932r	7	8	application	application	NOUN
s4655d8932r	7	9	on	on	ADP
s4655d8932r	7	10	substrate	substrate	NOUN
s4655d8932r	7	11	surfaces	surface	NOUN
s4655d8932r	7	12	.	.	PUNCT
s4655d8932r	8	1	dichloroethane	dichloroethane	PROPN
s4655d8932r	8	2	(	(	PUNCT
s4655d8932r	8	3	dce	dce	PROPN
s4655d8932r	8	4	)	)	PUNCT
s4655d8932r	8	5	and	and	CCONJ
s4655d8932r	8	6	dichloromethane	dichloromethane	NOUN
s4655d8932r	8	7	(	(	PUNCT
s4655d8932r	8	8	dcm	dcm	PROPN
s4655d8932r	8	9	)	)	PUNCT
s4655d8932r	8	10	were	be	AUX
s4655d8932r	8	11	found	find	VERB
s4655d8932r	8	12	to	to	PART
s4655d8932r	8	13	be	be	AUX
s4655d8932r	8	14	good	good	ADJ
s4655d8932r	8	15	polymethylmethacrylate	polymethylmethacrylate	NOUN
s4655d8932r	8	16	(	(	PUNCT
s4655d8932r	8	17	pmma	pmma	PROPN
s4655d8932r	8	18	)	)	PUNCT
s4655d8932r	8	19	removers	remover	VERB
s4655d8932r	8	20	and	and	CCONJ
s4655d8932r	8	21	returned	return	VERB
s4655d8932r	8	22	the	the	DET
s4655d8932r	8	23	surface	surface	NOUN
s4655d8932r	8	24	to	to	ADP
s4655d8932r	8	25	its	its	PRON
s4655d8932r	8	26	original	original	ADJ
s4655d8932r	8	27	condition	condition	NOUN
s4655d8932r	8	28	after	after	ADP
s4655d8932r	8	29	pmma	pmma	PROPN
s4655d8932r	8	30	removal	removal	PROPN
s4655d8932r	8	31	.	.	PUNCT
s4655d8932r	9	1	contamination	contamination	NOUN
s4655d8932r	9	2	resist	resist	NOUN
s4655d8932r	9	3	and	and	CCONJ
s4655d8932r	9	4	octadecyltrichlorosilane	octadecyltrichlorosilane	NOUN
s4655d8932r	9	5	(	(	PUNCT
s4655d8932r	9	6	ots	ots	PROPN
s4655d8932r	9	7	)	)	PUNCT
s4655d8932r	9	8	self	self	NOUN
s4655d8932r	9	9	-	-	PUNCT
s4655d8932r	9	10	assembled	assemble	VERB
s4655d8932r	9	11	monolayers	monolayer	NOUN
s4655d8932r	9	12	(	(	PUNCT
s4655d8932r	9	13	sams	sam	NOUN
s4655d8932r	9	14	)	)	PUNCT
s4655d8932r	9	15	resist	resist	NOUN
s4655d8932r	9	16	were	be	AUX
s4655d8932r	9	17	also	also	ADV
s4655d8932r	9	18	investigated	investigate	VERB
s4655d8932r	9	19	for	for	ADP
s4655d8932r	9	20	nanopatterning	nanopatterning	NOUN
s4655d8932r	9	21	of	of	ADP
s4655d8932r	9	22	molecules	molecule	NOUN
s4655d8932r	9	23	.	.	PUNCT
s4655d8932r	10	1	compared	compare	VERB
s4655d8932r	10	2	with	with	ADP
s4655d8932r	10	3	pmma	pmma	PROPN
s4655d8932r	10	4	resist	resist	NOUN
s4655d8932r	10	5	,	,	PUNCT
s4655d8932r	10	6	both	both	PRON
s4655d8932r	10	7	of	of	ADP
s4655d8932r	10	8	these	these	DET
s4655d8932r	10	9	two	two	NUM
s4655d8932r	10	10	resists	resist	NOUN
s4655d8932r	10	11	are	be	AUX
s4655d8932r	10	12	not	not	PART
s4655d8932r	10	13	appropriate	appropriate	ADJ
s4655d8932r	10	14	for	for	ADP
s4655d8932r	10	15	molecular	molecular	ADJ
s4655d8932r	10	16	nanopatterning	nanopatterning	NOUN
s4655d8932r	10	17	.	.	PUNCT
s4655d8932r	11	1	it	it	PRON
s4655d8932r	11	2	is	be	AUX
s4655d8932r	11	3	hard	hard	ADJ
s4655d8932r	11	4	for	for	SCONJ
s4655d8932r	11	5	sams	sam	NOUN
s4655d8932r	11	6	to	to	PART
s4655d8932r	11	7	fully	fully	ADV
s4655d8932r	11	8	cover	cover	VERB
s4655d8932r	11	9	substrate	substrate	NOUN
s4655d8932r	11	10	surfaces	surface	NOUN
s4655d8932r	11	11	and	and	CCONJ
s4655d8932r	11	12	be	be	AUX
s4655d8932r	11	13	removed	remove	VERB
s4655d8932r	11	14	after	after	ADP
s4655d8932r	11	15	pattern	pattern	NOUN
s4655d8932r	11	16	transfer	transfer	NOUN
s4655d8932r	11	17	.	.	PUNCT
s4655d8932r	12	1	it	it	PRON
s4655d8932r	12	2	is	be	AUX
s4655d8932r	12	3	time	time	NOUN
s4655d8932r	12	4	consuming	consume	VERB
s4655d8932r	12	5	to	to	PART
s4655d8932r	12	6	make	make	VERB
s4655d8932r	12	7	contamination	contamination	NOUN
s4655d8932r	12	8	patterns	pattern	NOUN
s4655d8932r	12	9	because	because	SCONJ
s4655d8932r	12	10	of	of	ADP
s4655d8932r	12	11	the	the	DET
s4655d8932r	12	12	needed	need	VERB
s4655d8932r	12	13	very	very	ADV
s4655d8932r	12	14	large	large	ADJ
s4655d8932r	12	15	doses	dose	NOUN
s4655d8932r	12	16	.	.	PUNCT
s4655d8932r	13	1	for	for	ADP
s4655d8932r	13	2	contamination	contamination	NOUN
s4655d8932r	13	3	resist	resist	NOUN
s4655d8932r	13	4	,	,	PUNCT
s4655d8932r	13	5	it	it	PRON
s4655d8932r	13	6	is	be	AUX
s4655d8932r	13	7	also	also	ADV
s4655d8932r	13	8	very	very	ADV
s4655d8932r	13	9	hard	hard	ADJ
s4655d8932r	13	10	to	to	PART
s4655d8932r	13	11	control	control	VERB
s4655d8932r	13	12	the	the	DET
s4655d8932r	13	13	contamination	contamination	NOUN
s4655d8932r	13	14	residual	residual	ADJ
s4655d8932r	13	15	organic	organic	ADJ
s4655d8932r	13	16	molecules	molecule	NOUN
s4655d8932r	13	17	in	in	ADP
s4655d8932r	13	18	the	the	DET
s4655d8932r	13	19	sem	sem	PROPN
s4655d8932r	13	20	chamber	chamber	PROPN
s4655d8932r	13	21	.	.	PUNCT
s4655d8932r	14	1	pmma	pmma	PROPN
s4655d8932r	14	2	is	be	AUX
s4655d8932r	14	3	the	the	DET
s4655d8932r	14	4	optimal	optimal	ADJ
s4655d8932r	14	5	resist	resist	NOUN
s4655d8932r	14	6	for	for	ADP
s4655d8932r	14	7	two	two	NUM
s4655d8932r	14	8	reasons	reason	NOUN
s4655d8932r	14	9	;	;	PUNCT
s4655d8932r	14	10	one	one	NUM
s4655d8932r	14	11	is	be	AUX
s4655d8932r	14	12	the	the	DET
s4655d8932r	14	13	full	full	ADJ
s4655d8932r	14	14	coverage	coverage	NOUN
s4655d8932r	14	15	of	of	ADP
s4655d8932r	14	16	substrate	substrate	NOUN
s4655d8932r	14	17	surface	surface	NOUN
s4655d8932r	14	18	and	and	CCONJ
s4655d8932r	14	19	the	the	DET
s4655d8932r	14	20	other	other	ADJ
s4655d8932r	14	21	is	be	AUX
s4655d8932r	14	22	easy	easy	ADJ
s4655d8932r	14	23	removal	removal	NOUN
s4655d8932r	14	24	by	by	ADP
s4655d8932r	14	25	dce	dce	ADJ
s4655d8932r	14	26	or	or	CCONJ
s4655d8932r	14	27	dcm	dcm	ADJ
s4655d8932r	14	28	.	.	PUNCT
s4655d8932r	15	1	for	for	ADP
s4655d8932r	15	2	a	a	DET
s4655d8932r	15	3	complete	complete	ADJ
s4655d8932r	15	4	scheme	scheme	NOUN
s4655d8932r	15	5	of	of	ADP
s4655d8932r	15	6	the	the	DET
s4655d8932r	15	7	molecular	molecular	ADJ
s4655d8932r	15	8	liftoff	liftoff	NOUN
s4655d8932r	15	9	technique	technique	NOUN
s4655d8932r	15	10	for	for	ADP
s4655d8932r	15	11	molecular	molecular	ADJ
s4655d8932r	15	12	nanopatterning	nanopatterning	NOUN
s4655d8932r	15	13	,	,	PUNCT
s4655d8932r	15	14	an	an	DET
s4655d8932r	15	15	inorganic	inorganic	ADJ
s4655d8932r	15	16	resist	resist	NOUN
s4655d8932r	15	17	,	,	PUNCT
s4655d8932r	15	18	lif	lif	PROPN
s4655d8932r	15	19	(	(	PUNCT
s4655d8932r	15	20	alf3	alf3	PROPN
s4655d8932r	15	21	)	)	PUNCT
s4655d8932r	15	22	,	,	PUNCT
s4655d8932r	15	23	is	be	AUX
s4655d8932r	15	24	proposed	propose	VERB
s4655d8932r	15	25	to	to	PART
s4655d8932r	15	26	make	make	VERB
s4655d8932r	15	27	nanopatterning	nanopatterning	NOUN
s4655d8932r	15	28	of	of	ADP
s4655d8932r	15	29	organic	organic	ADJ
s4655d8932r	15	30	solvent	solvent	NOUN
s4655d8932r	15	31	-	-	PUNCT
s4655d8932r	15	32	soluble	soluble	ADJ
s4655d8932r	15	33	molecules	molecule	NOUN
s4655d8932r	15	34	in	in	ADP
s4655d8932r	15	35	the	the	DET
s4655d8932r	15	36	future	future	NOUN
s4655d8932r	15	37	.	.	PUNCT
s4655d8932r	16	1	in	in	ADP
s4655d8932r	16	2	order	order	NOUN
s4655d8932r	16	3	to	to	PART
s4655d8932r	16	4	obtain	obtain	VERB
s4655d8932r	16	5	the	the	DET
s4655d8932r	16	6	real	real	ADJ
s4655d8932r	16	7	size	size	NOUN
s4655d8932r	16	8	of	of	ADP
s4655d8932r	16	9	narrow	narrow	ADJ
s4655d8932r	16	10	molecular	molecular	ADJ
s4655d8932r	16	11	patterns	pattern	NOUN
s4655d8932r	16	12	and	and	CCONJ
s4655d8932r	16	13	investigate	investigate	VERB
s4655d8932r	16	14	surface	surface	NOUN
s4655d8932r	16	15	defects	defect	NOUN
s4655d8932r	16	16	affecting	affect	VERB
s4655d8932r	16	17	molecular	molecular	ADJ
s4655d8932r	16	18	adhesion	adhesion	NOUN
s4655d8932r	16	19	,	,	PUNCT
s4655d8932r	16	20	scanning	scan	VERB
s4655d8932r	16	21	tunneling	tunneling	NOUN
s4655d8932r	16	22	microscopy	microscopy	NOUN
s4655d8932r	16	23	(	(	PUNCT
s4655d8932r	16	24	stm	stm	NOUN
s4655d8932r	16	25	)	)	PUNCT
s4655d8932r	16	26	is	be	AUX
s4655d8932r	16	27	proposed	propose	VERB
s4655d8932r	16	28	to	to	PART
s4655d8932r	16	29	be	be	AUX
s4655d8932r	16	30	used	use	VERB
s4655d8932r	16	31	to	to	PART
s4655d8932r	16	32	solve	solve	VERB
s4655d8932r	16	33	these	these	DET
s4655d8932r	16	34	issues	issue	NOUN
s4655d8932r	16	35	for	for	ADP
s4655d8932r	16	36	the	the	DET
s4655d8932r	16	37	atomic	atomic	ADJ
s4655d8932r	16	38	resolution	resolution	NOUN
s4655d8932r	16	39	stm	stm	PROPN
s4655d8932r	16	40	can	can	AUX
s4655d8932r	16	41	provide	provide	VERB
s4655d8932r	16	42	.	.	PUNCT