id	sid	tid	token	lemma	pos
qv33rv06f6w	1	1	the	the	DET
qv33rv06f6w	1	2	fast	fast	ADJ
qv33rv06f6w	1	3	development	development	NOUN
qv33rv06f6w	1	4	and	and	CCONJ
qv33rv06f6w	1	5	growth	growth	NOUN
qv33rv06f6w	1	6	of	of	ADP
qv33rv06f6w	1	7	portable	portable	ADJ
qv33rv06f6w	1	8	electronic	electronic	ADJ
qv33rv06f6w	1	9	devices	device	NOUN
qv33rv06f6w	1	10	for	for	ADP
qv33rv06f6w	1	11	wireless	wireless	ADJ
qv33rv06f6w	1	12	communications	communication	NOUN
qv33rv06f6w	1	13	demand	demand	NOUN
qv33rv06f6w	1	14	radio	radio	NOUN
qv33rv06f6w	1	15	frequency	frequency	NOUN
qv33rv06f6w	1	16	(	(	PUNCT
qv33rv06f6w	1	17	rf	rf	PROPN
qv33rv06f6w	1	18	)	)	PUNCT
qv33rv06f6w	1	19	devices	device	NOUN
qv33rv06f6w	1	20	that	that	PRON
qv33rv06f6w	1	21	can	can	AUX
qv33rv06f6w	1	22	amplify	amplify	VERB
qv33rv06f6w	1	23	signal	signal	ADJ
qv33rv06f6w	1	24	power	power	NOUN
qv33rv06f6w	1	25	in	in	ADP
qv33rv06f6w	1	26	the	the	DET
qv33rv06f6w	1	27	range	range	NOUN
qv33rv06f6w	1	28	of	of	ADP
qv33rv06f6w	1	29	microwave	microwave	NOUN
qv33rv06f6w	1	30	frequencies	frequency	NOUN
qv33rv06f6w	1	31	and	and	CCONJ
qv33rv06f6w	1	32	beyond	beyond	ADP
qv33rv06f6w	1	33	.	.	PUNCT
qv33rv06f6w	2	1	the	the	DET
qv33rv06f6w	2	2	transistor	transistor	NOUN
qv33rv06f6w	2	3	is	be	AUX
qv33rv06f6w	2	4	the	the	DET
qv33rv06f6w	2	5	core	core	NOUN
qv33rv06f6w	2	6	of	of	ADP
qv33rv06f6w	2	7	power	power	NOUN
qv33rv06f6w	2	8	amplifier	amplifier	NOUN
qv33rv06f6w	2	9	circuits	circuit	NOUN
qv33rv06f6w	2	10	.	.	PUNCT
qv33rv06f6w	3	1	this	this	PRON
qv33rv06f6w	3	2	requires	require	VERB
qv33rv06f6w	3	3	transistors	transistor	NOUN
qv33rv06f6w	3	4	to	to	PART
qv33rv06f6w	3	5	be	be	AUX
qv33rv06f6w	3	6	capable	capable	ADJ
qv33rv06f6w	3	7	of	of	ADP
qv33rv06f6w	3	8	amplifying	amplify	VERB
qv33rv06f6w	3	9	the	the	DET
qv33rv06f6w	3	10	current	current	NOUN
qv33rv06f6w	3	11	or	or	CCONJ
qv33rv06f6w	3	12	the	the	DET
qv33rv06f6w	3	13	power	power	NOUN
qv33rv06f6w	3	14	so	so	SCONJ
qv33rv06f6w	3	15	that	that	SCONJ
qv33rv06f6w	3	16	larger	large	ADJ
qv33rv06f6w	3	17	power	power	NOUN
qv33rv06f6w	3	18	will	will	AUX
qv33rv06f6w	3	19	be	be	AUX
qv33rv06f6w	3	20	delivered	deliver	VERB
qv33rv06f6w	3	21	to	to	ADP
qv33rv06f6w	3	22	the	the	DET
qv33rv06f6w	3	23	load	load	NOUN
qv33rv06f6w	3	24	than	than	ADP
qv33rv06f6w	3	25	the	the	DET
qv33rv06f6w	3	26	power	power	NOUN
qv33rv06f6w	3	27	received	receive	VERB
qv33rv06f6w	3	28	from	from	ADP
qv33rv06f6w	3	29	the	the	DET
qv33rv06f6w	3	30	input	input	NOUN
qv33rv06f6w	3	31	signal	signal	NOUN
qv33rv06f6w	3	32	at	at	ADP
qv33rv06f6w	3	33	high	high	ADJ
qv33rv06f6w	3	34	frequency	frequency	NOUN
qv33rv06f6w	3	35	.	.	PUNCT
qv33rv06f6w	4	1	this	this	DET
qv33rv06f6w	4	2	work	work	NOUN
qv33rv06f6w	4	3	focuses	focus	VERB
qv33rv06f6w	4	4	on	on	ADP
qv33rv06f6w	4	5	exploring	explore	VERB
qv33rv06f6w	4	6	new	new	ADJ
qv33rv06f6w	4	7	materials	material	NOUN
qv33rv06f6w	4	8	and	and	CCONJ
qv33rv06f6w	4	9	new	new	ADJ
qv33rv06f6w	4	10	device	device	NOUN
qv33rv06f6w	4	11	structures	structure	NOUN
qv33rv06f6w	4	12	to	to	PART
qv33rv06f6w	4	13	develop	develop	VERB
qv33rv06f6w	4	14	novel	novel	ADJ
qv33rv06f6w	4	15	devices	device	NOUN
qv33rv06f6w	4	16	that	that	PRON
qv33rv06f6w	4	17	can	can	AUX
qv33rv06f6w	4	18	operate	operate	VERB
qv33rv06f6w	4	19	at	at	ADP
qv33rv06f6w	4	20	very	very	ADV
qv33rv06f6w	4	21	high	high	ADJ
qv33rv06f6w	4	22	speed	speed	NOUN
qv33rv06f6w	4	23	.	.	PUNCT
qv33rv06f6w	5	1	in	in	ADP
qv33rv06f6w	5	2	chapter	chapter	NOUN
qv33rv06f6w	5	3	2	2	NUM
qv33rv06f6w	5	4	,	,	PUNCT
qv33rv06f6w	5	5	the	the	DET
qv33rv06f6w	5	6	high	high	ADJ
qv33rv06f6w	5	7	frequency	frequency	NOUN
qv33rv06f6w	5	8	performance	performance	NOUN
qv33rv06f6w	5	9	limitations	limitation	NOUN
qv33rv06f6w	5	10	of	of	ADP
qv33rv06f6w	5	11	graphene	graphene	ADJ
qv33rv06f6w	5	12	transistor	transistor	NOUN
qv33rv06f6w	5	13	with	with	ADP
qv33rv06f6w	5	14	channel	channel	NOUN
qv33rv06f6w	5	15	length	length	NOUN
qv33rv06f6w	5	16	less	less	ADJ
qv33rv06f6w	5	17	than	than	ADP
qv33rv06f6w	5	18	100	100	NUM
qv33rv06f6w	5	19	nm	nm	NOUN
qv33rv06f6w	5	20	are	be	AUX
qv33rv06f6w	5	21	explored	explore	VERB
qv33rv06f6w	5	22	.	.	PUNCT
qv33rv06f6w	6	1	a	a	DET
qv33rv06f6w	6	2	nano	nano	NOUN
qv33rv06f6w	6	3	-	-	PUNCT
qv33rv06f6w	6	4	scale	scale	NOUN
qv33rv06f6w	6	5	transistor	transistor	NOUN
qv33rv06f6w	6	6	simulation	simulation	NOUN
qv33rv06f6w	6	7	approach	approach	NOUN
qv33rv06f6w	6	8	is	be	AUX
qv33rv06f6w	6	9	presented	present	VERB
qv33rv06f6w	6	10	based	base	VERB
qv33rv06f6w	6	11	on	on	ADP
qv33rv06f6w	6	12	the	the	DET
qv33rv06f6w	6	13	non	non	ADJ
qv33rv06f6w	6	14	-	-	ADJ
qv33rv06f6w	6	15	equilibrium	equilibrium	ADJ
qv33rv06f6w	6	16	greens	green	NOUN
qv33rv06f6w	6	17	'	'	PART
qv33rv06f6w	6	18	function	function	NOUN
qv33rv06f6w	6	19	(	(	PUNCT
qv33rv06f6w	6	20	negf	negf	PROPN
qv33rv06f6w	6	21	)	)	PUNCT
qv33rv06f6w	6	22	formalism	formalism	NOUN
qv33rv06f6w	6	23	self	self	NOUN
qv33rv06f6w	6	24	-	-	PUNCT
qv33rv06f6w	6	25	consistently	consistently	ADV
qv33rv06f6w	6	26	solved	solve	VERB
qv33rv06f6w	6	27	with	with	ADP
qv33rv06f6w	6	28	the	the	DET
qv33rv06f6w	6	29	two	two	NUM
qv33rv06f6w	6	30	-	-	PUNCT
qv33rv06f6w	6	31	dimensional	dimensional	ADJ
qv33rv06f6w	6	32	poisson	poisson	NOUN
qv33rv06f6w	6	33	equation	equation	NOUN
qv33rv06f6w	6	34	under	under	ADP
qv33rv06f6w	6	35	the	the	DET
qv33rv06f6w	6	36	ballistic	ballistic	ADJ
qv33rv06f6w	6	37	limit	limit	NOUN
qv33rv06f6w	6	38	.	.	PUNCT
qv33rv06f6w	7	1	the	the	DET
qv33rv06f6w	7	2	simulated	simulated	ADJ
qv33rv06f6w	7	3	results	result	NOUN
qv33rv06f6w	7	4	predict	predict	VERB
qv33rv06f6w	7	5	that	that	SCONJ
qv33rv06f6w	7	6	intrinsic	intrinsic	ADJ
qv33rv06f6w	7	7	cutoff	cutoff	NOUN
qv33rv06f6w	7	8	frequency	frequency	NOUN
qv33rv06f6w	7	9	ft	ft	PROPN
qv33rv06f6w	7	10	of	of	ADP
qv33rv06f6w	7	11	graphene	graphene	NOUN
qv33rv06f6w	7	12	transistor	transistor	NOUN
qv33rv06f6w	7	13	can	can	AUX
qv33rv06f6w	7	14	be	be	AUX
qv33rv06f6w	7	15	close	close	ADJ
qv33rv06f6w	7	16	to	to	ADP
qv33rv06f6w	7	17	2	2	NUM
qv33rv06f6w	7	18	thz	thz	NOUN
qv33rv06f6w	7	19	at	at	ADP
qv33rv06f6w	7	20	15	15	NUM
qv33rv06f6w	7	21	nm	nm	NOUN
qv33rv06f6w	7	22	channel	channel	NOUN
qv33rv06f6w	7	23	length	length	NOUN
qv33rv06f6w	7	24	.	.	PUNCT
qv33rv06f6w	8	1	the	the	DET
qv33rv06f6w	8	2	parasitic	parasitic	ADJ
qv33rv06f6w	8	3	resistances	resistance	NOUN
qv33rv06f6w	8	4	and	and	CCONJ
qv33rv06f6w	8	5	capacitances	capacitance	NOUN
qv33rv06f6w	8	6	are	be	AUX
qv33rv06f6w	8	7	included	include	VERB
qv33rv06f6w	8	8	in	in	ADP
qv33rv06f6w	8	9	the	the	DET
qv33rv06f6w	8	10	simulation	simulation	NOUN
qv33rv06f6w	8	11	,	,	PUNCT
qv33rv06f6w	8	12	which	which	PRON
qv33rv06f6w	8	13	degrade	degrade	VERB
qv33rv06f6w	8	14	the	the	PRON
qv33rv06f6w	8	15	on	on	ADP
qv33rv06f6w	8	16	current	current	ADJ
qv33rv06f6w	8	17	ion	ion	NOUN
qv33rv06f6w	8	18	,	,	PUNCT
qv33rv06f6w	8	19	the	the	DET
qv33rv06f6w	8	20	transconductance	transconductance	NOUN
qv33rv06f6w	8	21	gm	gm	PROPN
qv33rv06f6w	8	22	,	,	PUNCT
qv33rv06f6w	8	23	and	and	CCONJ
qv33rv06f6w	8	24	the	the	DET
qv33rv06f6w	8	25	peak	peak	NOUN
qv33rv06f6w	8	26	ft	ft	PROPN
qv33rv06f6w	8	27	.	.	PROPN
qv33rv06f6w	9	1	in	in	ADP
qv33rv06f6w	9	2	spite	spite	NOUN
qv33rv06f6w	9	3	of	of	ADP
qv33rv06f6w	9	4	zero	zero	NUM
qv33rv06f6w	9	5	gap	gap	NOUN
qv33rv06f6w	9	6	,	,	PUNCT
qv33rv06f6w	9	7	graphene	graphene	NOUN
qv33rv06f6w	9	8	based	base	VERB
qv33rv06f6w	9	9	electronics	electronic	NOUN
qv33rv06f6w	9	10	are	be	AUX
qv33rv06f6w	9	11	promising	promise	VERB
qv33rv06f6w	9	12	for	for	ADP
qv33rv06f6w	9	13	specific	specific	ADJ
qv33rv06f6w	9	14	application	application	NOUN
qv33rv06f6w	9	15	.	.	PUNCT
qv33rv06f6w	10	1	for	for	ADP
qv33rv06f6w	10	2	instance	instance	NOUN
qv33rv06f6w	10	3	,	,	PUNCT
qv33rv06f6w	10	4	since	since	SCONJ
qv33rv06f6w	10	5	graphene	graphene	NOUN
qv33rv06f6w	10	6	and	and	CCONJ
qv33rv06f6w	10	7	other	other	ADJ
qv33rv06f6w	10	8	two	two	NUM
qv33rv06f6w	10	9	dimensional	dimensional	ADJ
qv33rv06f6w	10	10	materials	material	NOUN
qv33rv06f6w	10	11	are	be	AUX
qv33rv06f6w	10	12	bendable	bendable	ADJ
qv33rv06f6w	10	13	,	,	PUNCT
qv33rv06f6w	10	14	they	they	PRON
qv33rv06f6w	10	15	show	show	VERB
qv33rv06f6w	10	16	promise	promise	NOUN
qv33rv06f6w	10	17	for	for	ADP
qv33rv06f6w	10	18	the	the	DET
qv33rv06f6w	10	19	emerging	emerge	VERB
qv33rv06f6w	10	20	field	field	NOUN
qv33rv06f6w	10	21	of	of	ADP
qv33rv06f6w	10	22	flexible	flexible	ADJ
qv33rv06f6w	10	23	electronics	electronic	NOUN
qv33rv06f6w	10	24	.	.	PUNCT
qv33rv06f6w	11	1	in	in	ADP
qv33rv06f6w	11	2	chapter	chapter	NOUN
qv33rv06f6w	11	3	3	3	NUM
qv33rv06f6w	11	4	,	,	PUNCT
qv33rv06f6w	11	5	we	we	PRON
qv33rv06f6w	11	6	explored	explore	VERB
qv33rv06f6w	11	7	the	the	DET
qv33rv06f6w	11	8	possibility	possibility	NOUN
qv33rv06f6w	11	9	of	of	ADP
qv33rv06f6w	11	10	developing	develop	VERB
qv33rv06f6w	11	11	a	a	DET
qv33rv06f6w	11	12	2d	2d	NOUN
qv33rv06f6w	11	13	materials	material	NOUN
qv33rv06f6w	11	14	based	base	VERB
qv33rv06f6w	11	15	vertical	vertical	ADJ
qv33rv06f6w	11	16	tunneling	tunneling	NOUN
qv33rv06f6w	11	17	device	device	NOUN
qv33rv06f6w	11	18	.	.	PUNCT
qv33rv06f6w	12	1	an	an	DET
qv33rv06f6w	12	2	analytical	analytical	ADJ
qv33rv06f6w	12	3	model	model	NOUN
qv33rv06f6w	12	4	to	to	PART
qv33rv06f6w	12	5	calculate	calculate	VERB
qv33rv06f6w	12	6	the	the	DET
qv33rv06f6w	12	7	channel	channel	NOUN
qv33rv06f6w	12	8	potentials	potential	NOUN
qv33rv06f6w	12	9	and	and	CCONJ
qv33rv06f6w	12	10	current	current	ADJ
qv33rv06f6w	12	11	-	-	PUNCT
qv33rv06f6w	12	12	voltage	voltage	NOUN
qv33rv06f6w	12	13	characteristics	characteristic	NOUN
qv33rv06f6w	12	14	in	in	ADP
qv33rv06f6w	12	15	a	a	DET
qv33rv06f6w	12	16	symmetric	symmetric	ADJ
qv33rv06f6w	12	17	tunneling	tunneling	NOUN
qv33rv06f6w	12	18	field	field	NOUN
qv33rv06f6w	12	19	-	-	PUNCT
qv33rv06f6w	12	20	effect	effect	NOUN
qv33rv06f6w	12	21	-	-	PUNCT
qv33rv06f6w	12	22	transistor	transistor	NOUN
qv33rv06f6w	12	23	(	(	PUNCT
qv33rv06f6w	12	24	symfet	symfet	NOUN
qv33rv06f6w	12	25	)	)	PUNCT
qv33rv06f6w	12	26	is	be	AUX
qv33rv06f6w	12	27	presented	present	VERB
qv33rv06f6w	12	28	.	.	PUNCT
qv33rv06f6w	13	1	the	the	DET
qv33rv06f6w	13	2	current	current	NOUN
qv33rv06f6w	13	3	in	in	ADP
qv33rv06f6w	13	4	a	a	DET
qv33rv06f6w	13	5	symfet	symfet	NOUN
qv33rv06f6w	13	6	flows	flow	VERB
qv33rv06f6w	13	7	by	by	ADP
qv33rv06f6w	13	8	tunneling	tunneling	NOUN
qv33rv06f6w	13	9	from	from	ADP
qv33rv06f6w	13	10	a	a	DET
qv33rv06f6w	13	11	n	n	ADJ
qv33rv06f6w	13	12	-	-	PUNCT
qv33rv06f6w	13	13	type	type	NOUN
qv33rv06f6w	13	14	graphene	graphene	NOUN
qv33rv06f6w	13	15	layer	layer	NOUN
qv33rv06f6w	13	16	to	to	ADP
qv33rv06f6w	13	17	a	a	DET
qv33rv06f6w	13	18	p	p	NOUN
qv33rv06f6w	13	19	-	-	PUNCT
qv33rv06f6w	13	20	type	type	NOUN
qv33rv06f6w	13	21	graphene	graphene	NOUN
qv33rv06f6w	13	22	layer	layer	NOUN
qv33rv06f6w	13	23	.	.	PUNCT
qv33rv06f6w	14	1	a	a	DET
qv33rv06f6w	14	2	large	large	ADJ
qv33rv06f6w	14	3	current	current	ADJ
qv33rv06f6w	14	4	peak	peak	NOUN
qv33rv06f6w	14	5	occurs	occur	VERB
qv33rv06f6w	14	6	when	when	SCONJ
qv33rv06f6w	14	7	the	the	DET
qv33rv06f6w	14	8	dirac	dirac	NOUN
qv33rv06f6w	14	9	points	point	NOUN
qv33rv06f6w	14	10	are	be	AUX
qv33rv06f6w	14	11	aligned	align	VERB
qv33rv06f6w	14	12	at	at	ADP
qv33rv06f6w	14	13	a	a	DET
qv33rv06f6w	14	14	particular	particular	ADJ
qv33rv06f6w	14	15	drain	drain	NOUN
qv33rv06f6w	14	16	-	-	PUNCT
qv33rv06f6w	14	17	to	to	ADP
qv33rv06f6w	14	18	-	-	PUNCT
qv33rv06f6w	14	19	source	source	NOUN
qv33rv06f6w	14	20	bias	bias	NOUN
qv33rv06f6w	14	21	vds	vds	PROPN
qv33rv06f6w	14	22	.	.	PUNCT
qv33rv06f6w	15	1	the	the	DET
qv33rv06f6w	15	2	model	model	NOUN
qv33rv06f6w	15	3	shows	show	VERB
qv33rv06f6w	15	4	that	that	SCONJ
qv33rv06f6w	15	5	the	the	DET
qv33rv06f6w	15	6	current	current	NOUN
qv33rv06f6w	15	7	of	of	ADP
qv33rv06f6w	15	8	the	the	DET
qv33rv06f6w	15	9	symfet	symfet	NOUN
qv33rv06f6w	15	10	is	be	AUX
qv33rv06f6w	15	11	weakly	weakly	ADV
qv33rv06f6w	15	12	dependent	dependent	ADJ
qv33rv06f6w	15	13	on	on	ADP
qv33rv06f6w	15	14	temperature	temperature	NOUN
qv33rv06f6w	15	15	.	.	PUNCT
qv33rv06f6w	16	1	the	the	DET
qv33rv06f6w	16	2	resonant	resonant	ADJ
qv33rv06f6w	16	3	current	current	ADJ
qv33rv06f6w	16	4	peak	peak	NOUN
qv33rv06f6w	16	5	is	be	AUX
qv33rv06f6w	16	6	controlled	control	VERB
qv33rv06f6w	16	7	by	by	ADP
qv33rv06f6w	16	8	chemical	chemical	NOUN
qv33rv06f6w	16	9	doping	doping	NOUN
qv33rv06f6w	16	10	and	and	CCONJ
qv33rv06f6w	16	11	applied	apply	VERB
qv33rv06f6w	16	12	gate	gate	NOUN
qv33rv06f6w	16	13	bias	bias	NOUN
qv33rv06f6w	16	14	.	.	PUNCT
qv33rv06f6w	17	1	the	the	DET
qv33rv06f6w	17	2	on	on	ADP
qv33rv06f6w	17	3	/	/	PUNCT
qv33rv06f6w	17	4	off	off	ADP
qv33rv06f6w	17	5	ratio	ratio	NOUN
qv33rv06f6w	17	6	increases	increase	NOUN
qv33rv06f6w	17	7	with	with	ADP
qv33rv06f6w	17	8	graphene	graphene	ADJ
qv33rv06f6w	17	9	coherence	coherence	NOUN
qv33rv06f6w	17	10	length	length	NOUN
qv33rv06f6w	17	11	and	and	CCONJ
qv33rv06f6w	17	12	doping	dope	VERB
qv33rv06f6w	17	13	concentration	concentration	NOUN
qv33rv06f6w	17	14	.	.	PUNCT
qv33rv06f6w	18	1	the	the	DET
qv33rv06f6w	18	2	symmetric	symmetric	ADJ
qv33rv06f6w	18	3	resonant	resonant	NOUN
qv33rv06f6w	18	4	peak	peak	NOUN
qv33rv06f6w	18	5	in	in	ADP
qv33rv06f6w	18	6	symfet	symfet	PROPN
qv33rv06f6w	18	7	is	be	AUX
qv33rv06f6w	18	8	a	a	DET
qv33rv06f6w	18	9	good	good	ADJ
qv33rv06f6w	18	10	candidate	candidate	NOUN
qv33rv06f6w	18	11	for	for	ADP
qv33rv06f6w	18	12	high	high	ADJ
qv33rv06f6w	18	13	-	-	PUNCT
qv33rv06f6w	18	14	speed	speed	NOUN
qv33rv06f6w	18	15	analog	analog	NOUN
qv33rv06f6w	18	16	applications	application	NOUN
qv33rv06f6w	18	17	.	.	PUNCT
qv33rv06f6w	19	1	rest	rest	NOUN
qv33rv06f6w	19	2	of	of	ADP
qv33rv06f6w	19	3	the	the	DET
qv33rv06f6w	19	4	work	work	NOUN
qv33rv06f6w	19	5	focuses	focus	VERB
qv33rv06f6w	19	6	on	on	ADP
qv33rv06f6w	19	7	gallium	gallium	PROPN
qv33rv06f6w	19	8	nitride	nitride	PROPN
qv33rv06f6w	19	9	(	(	PUNCT
qv33rv06f6w	19	10	gan	gan	PROPN
qv33rv06f6w	19	11	)	)	PUNCT
qv33rv06f6w	19	12	,	,	PUNCT
qv33rv06f6w	19	13	a	a	DET
qv33rv06f6w	19	14	compound	compound	NOUN
qv33rv06f6w	19	15	semiconductor	semiconductor	NOUN
qv33rv06f6w	19	16	with	with	ADP
qv33rv06f6w	19	17	high	high	ADJ
qv33rv06f6w	19	18	electron	electron	NOUN
qv33rv06f6w	19	19	mobility	mobility	NOUN
qv33rv06f6w	19	20	,	,	PUNCT
qv33rv06f6w	19	21	high	high	ADJ
qv33rv06f6w	19	22	saturation	saturation	NOUN
qv33rv06f6w	19	23	velocity	velocity	NOUN
qv33rv06f6w	19	24	and	and	CCONJ
qv33rv06f6w	19	25	large	large	ADJ
qv33rv06f6w	19	26	band	band	NOUN
qv33rv06f6w	19	27	gap	gap	NOUN
qv33rv06f6w	19	28	.	.	PUNCT
qv33rv06f6w	20	1	several	several	ADJ
qv33rv06f6w	20	2	novel	novel	ADJ
qv33rv06f6w	20	3	device	device	NOUN
qv33rv06f6w	20	4	concepts	concept	NOUN
qv33rv06f6w	20	5	based	base	VERB
qv33rv06f6w	20	6	on	on	ADP
qv33rv06f6w	20	7	gan	gan	PROPN
qv33rv06f6w	20	8	heterostructure	heterostructure	NOUN
qv33rv06f6w	20	9	have	have	AUX
qv33rv06f6w	20	10	been	be	AUX
qv33rv06f6w	20	11	proposed	propose	VERB
qv33rv06f6w	20	12	for	for	ADP
qv33rv06f6w	20	13	high	high	ADJ
qv33rv06f6w	20	14	frequency	frequency	NOUN
qv33rv06f6w	20	15	and	and	CCONJ
qv33rv06f6w	20	16	high	high	ADJ
qv33rv06f6w	20	17	power	power	NOUN
qv33rv06f6w	20	18	applications	application	NOUN
qv33rv06f6w	20	19	.	.	PUNCT
qv33rv06f6w	21	1	in	in	ADP
qv33rv06f6w	21	2	chapter	chapter	NOUN
qv33rv06f6w	21	3	4	4	NUM
qv33rv06f6w	21	4	,	,	PUNCT
qv33rv06f6w	21	5	we	we	PRON
qv33rv06f6w	21	6	compared	compare	VERB
qv33rv06f6w	21	7	the	the	DET
qv33rv06f6w	21	8	performance	performance	NOUN
qv33rv06f6w	21	9	of	of	ADP
qv33rv06f6w	21	10	gan	gan	PROPN
qv33rv06f6w	21	11	schottky	schottky	PROPN
qv33rv06f6w	21	12	diodes	diode	VERB
qv33rv06f6w	21	13	on	on	ADP
qv33rv06f6w	21	14	bulk	bulk	ADJ
qv33rv06f6w	21	15	gan	gan	PROPN
qv33rv06f6w	21	16	substrates	substrate	NOUN
qv33rv06f6w	21	17	and	and	CCONJ
qv33rv06f6w	21	18	gan	gin	VERB
qv33rv06f6w	21	19	-	-	PUNCT
qv33rv06f6w	21	20	on	on	ADP
qv33rv06f6w	21	21	-	-	PUNCT
qv33rv06f6w	21	22	sapphire	sapphire	NOUN
qv33rv06f6w	21	23	substrates	substrate	NOUN
qv33rv06f6w	21	24	.	.	PUNCT
qv33rv06f6w	22	1	the	the	DET
qv33rv06f6w	22	2	forward	forward	ADJ
qv33rv06f6w	22	3	bias	bias	NOUN
qv33rv06f6w	22	4	iv	iv	X
qv33rv06f6w	22	5	characteristics	characteristic	NOUN
qv33rv06f6w	22	6	of	of	ADP
qv33rv06f6w	22	7	gan	gan	PROPN
qv33rv06f6w	22	8	schottky	schottky	PROPN
qv33rv06f6w	22	9	diodes	diode	VERB
qv33rv06f6w	22	10	on	on	ADP
qv33rv06f6w	22	11	bulk	bulk	ADJ
qv33rv06f6w	22	12	gan	gan	PROPN
qv33rv06f6w	22	13	substrate	substrate	NOUN
qv33rv06f6w	22	14	and	and	CCONJ
qv33rv06f6w	22	15	gan	gan	ADJ
qv33rv06f6w	22	16	-	-	PUNCT
qv33rv06f6w	22	17	on	on	ADP
qv33rv06f6w	22	18	-	-	PUNCT
qv33rv06f6w	22	19	sapphire	sapphire	NOUN
qv33rv06f6w	22	20	substrate	substrate	NOUN
qv33rv06f6w	22	21	are	be	AUX
qv33rv06f6w	22	22	well	well	ADV
qv33rv06f6w	22	23	explained	explain	VERB
qv33rv06f6w	22	24	by	by	ADP
qv33rv06f6w	22	25	the	the	DET
qv33rv06f6w	22	26	thermionic	thermionic	ADJ
qv33rv06f6w	22	27	emission	emission	NOUN
qv33rv06f6w	22	28	model	model	NOUN
qv33rv06f6w	22	29	.	.	PUNCT
qv33rv06f6w	23	1	due	due	ADP
qv33rv06f6w	23	2	to	to	ADP
qv33rv06f6w	23	3	the	the	DET
qv33rv06f6w	23	4	high	high	ADJ
qv33rv06f6w	23	5	quality	quality	NOUN
qv33rv06f6w	23	6	of	of	ADP
qv33rv06f6w	23	7	the	the	DET
qv33rv06f6w	23	8	gan	gan	PROPN
qv33rv06f6w	23	9	bulk	bulk	ADJ
qv33rv06f6w	23	10	substrate	substrate	NOUN
qv33rv06f6w	23	11	with	with	ADP
qv33rv06f6w	23	12	low	low	ADJ
qv33rv06f6w	23	13	dislocation	dislocation	NOUN
qv33rv06f6w	23	14	density	density	NOUN
qv33rv06f6w	23	15	,	,	PUNCT
qv33rv06f6w	23	16	gan	gan	PROPN
qv33rv06f6w	23	17	schottky	schottky	PROPN
qv33rv06f6w	23	18	diodes	diode	VERB
qv33rv06f6w	23	19	on	on	ADP
qv33rv06f6w	23	20	bulk	bulk	ADJ
qv33rv06f6w	23	21	gan	gan	PROPN
qv33rv06f6w	23	22	substrate	substrate	NOUN
qv33rv06f6w	23	23	show	show	NOUN
qv33rv06f6w	23	24	>	>	X
qv33rv06f6w	23	25	4	4	NUM
qv33rv06f6w	23	26	orders	order	NOUN
qv33rv06f6w	23	27	of	of	ADP
qv33rv06f6w	23	28	magnitude	magnitude	NOUN
qv33rv06f6w	23	29	less	less	ADV
qv33rv06f6w	23	30	reverse	reverse	ADJ
qv33rv06f6w	23	31	leakage	leakage	NOUN
qv33rv06f6w	23	32	current	current	ADJ
qv33rv06f6w	23	33	density	density	NOUN
qv33rv06f6w	23	34	than	than	ADP
qv33rv06f6w	23	35	those	those	PRON
qv33rv06f6w	23	36	on	on	ADP
qv33rv06f6w	23	37	gan	gin	VERB
qv33rv06f6w	23	38	-	-	PUNCT
qv33rv06f6w	23	39	on	on	ADP
qv33rv06f6w	23	40	-	-	PUNCT
qv33rv06f6w	23	41	sapphire	sapphire	NOUN
qv33rv06f6w	23	42	substrate	substrate	NOUN
qv33rv06f6w	23	43	.	.	PUNCT
qv33rv06f6w	24	1	the	the	DET
qv33rv06f6w	24	2	dislocation	dislocation	NOUN
qv33rv06f6w	24	3	induced	induce	VERB
qv33rv06f6w	24	4	schottky	schottky	NOUN
qv33rv06f6w	24	5	barrier	barrier	NOUN
qv33rv06f6w	24	6	lowering	lowering	NOUN
qv33rv06f6w	24	7	is	be	AUX
qv33rv06f6w	24	8	added	add	VERB
qv33rv06f6w	24	9	into	into	ADP
qv33rv06f6w	24	10	the	the	DET
qv33rv06f6w	24	11	thermionic	thermionic	ADJ
qv33rv06f6w	24	12	emission	emission	NOUN
qv33rv06f6w	24	13	model	model	NOUN
qv33rv06f6w	24	14	,	,	PUNCT
qv33rv06f6w	24	15	which	which	PRON
qv33rv06f6w	24	16	explains	explain	VERB
qv33rv06f6w	24	17	the	the	DET
qv33rv06f6w	24	18	temperature	temperature	NOUN
qv33rv06f6w	24	19	dependent	dependent	ADJ
qv33rv06f6w	24	20	iv	iv	PROPN
qv33rv06f6w	24	21	characteristics	characteristic	NOUN
qv33rv06f6w	24	22	.	.	PUNCT
qv33rv06f6w	25	1	in	in	ADP
qv33rv06f6w	25	2	additional	additional	ADJ
qv33rv06f6w	25	3	,	,	PUNCT
qv33rv06f6w	25	4	we	we	PRON
qv33rv06f6w	25	5	also	also	ADV
qv33rv06f6w	25	6	discussed	discuss	VERB
qv33rv06f6w	25	7	the	the	DET
qv33rv06f6w	25	8	lateral	lateral	ADJ
qv33rv06f6w	25	9	gan	gan	PROPN
qv33rv06f6w	25	10	schottky	schottky	PROPN
qv33rv06f6w	25	11	diode	diode	NOUN
qv33rv06f6w	25	12	between	between	ADP
qv33rv06f6w	25	13	metal/2degs	metal/2deg	NOUN
qv33rv06f6w	25	14	.	.	PUNCT
qv33rv06f6w	26	1	the	the	DET
qv33rv06f6w	26	2	advantages	advantage	NOUN
qv33rv06f6w	26	3	of	of	ADP
qv33rv06f6w	26	4	lateral	lateral	ADJ
qv33rv06f6w	26	5	gan	gan	PROPN
qv33rv06f6w	26	6	schottky	schottky	PROPN
qv33rv06f6w	26	7	diodes	diode	NOUN
qv33rv06f6w	26	8	are	be	AUX
qv33rv06f6w	26	9	a	a	PRON
qv33rv06f6w	26	10	)	)	PUNCT
qv33rv06f6w	26	11	,	,	PUNCT
qv33rv06f6w	26	12	the	the	DET
qv33rv06f6w	26	13	intrinsic	intrinsic	ADJ
qv33rv06f6w	26	14	cutoff	cutoff	NOUN
qv33rv06f6w	26	15	frequency	frequency	NOUN
qv33rv06f6w	26	16	is	be	AUX
qv33rv06f6w	26	17	in	in	ADP
qv33rv06f6w	26	18	the	the	DET
qv33rv06f6w	26	19	thz	thz	PROPN
qv33rv06f6w	26	20	range	range	NOUN
qv33rv06f6w	26	21	,	,	PUNCT
qv33rv06f6w	26	22	and	and	CCONJ
qv33rv06f6w	26	23	b),lateral	b),lateral	ADJ
qv33rv06f6w	26	24	gan	gan	PROPN
qv33rv06f6w	26	25	schottky	schottky	PROPN
qv33rv06f6w	26	26	diodes	diode	NOUN
qv33rv06f6w	26	27	can	can	AUX
qv33rv06f6w	26	28	be	be	AUX
qv33rv06f6w	26	29	directly	directly	ADV
qv33rv06f6w	26	30	integrated	integrate	VERB
qv33rv06f6w	26	31	with	with	ADP
qv33rv06f6w	26	32	gan	gan	PROPN
qv33rv06f6w	26	33	hemts	hemts	PROPN
qv33rv06f6w	26	34	,	,	PUNCT
qv33rv06f6w	26	35	which	which	PRON
qv33rv06f6w	26	36	offers	offer	VERB
qv33rv06f6w	26	37	the	the	DET
qv33rv06f6w	26	38	feasibility	feasibility	NOUN
qv33rv06f6w	26	39	to	to	PART
qv33rv06f6w	26	40	design	design	VERB
qv33rv06f6w	26	41	gan	gan	PROPN
qv33rv06f6w	26	42	mmic	mmic	PROPN
qv33rv06f6w	26	43	.	.	PUNCT
qv33rv06f6w	27	1	in	in	ADP
qv33rv06f6w	27	2	chapter	chapter	NOUN
qv33rv06f6w	27	3	5	5	NUM
qv33rv06f6w	27	4	,	,	PUNCT
qv33rv06f6w	27	5	a	a	DET
qv33rv06f6w	27	6	gan	gan	PROPN
qv33rv06f6w	27	7	heterostructure	heterostructure	NOUN
qv33rv06f6w	27	8	barrier	barrier	NOUN
qv33rv06f6w	27	9	diode	diode	NOUN
qv33rv06f6w	27	10	(	(	PUNCT
qv33rv06f6w	27	11	hbd	hbd	PROPN
qv33rv06f6w	27	12	)	)	PUNCT
qv33rv06f6w	27	13	is	be	AUX
qv33rv06f6w	27	14	designed	design	VERB
qv33rv06f6w	27	15	using	use	VERB
qv33rv06f6w	27	16	the	the	DET
qv33rv06f6w	27	17	polarization	polarization	NOUN
qv33rv06f6w	27	18	charge	charge	NOUN
qv33rv06f6w	27	19	and	and	CCONJ
qv33rv06f6w	27	20	band	band	NOUN
qv33rv06f6w	27	21	offset	offset	VERB
qv33rv06f6w	27	22	at	at	ADP
qv33rv06f6w	27	23	the	the	DET
qv33rv06f6w	27	24	algan	algan	PROPN
qv33rv06f6w	27	25	/	/	SYM
qv33rv06f6w	27	26	gan	gan	PROPN
qv33rv06f6w	27	27	heterojunction	heterojunction	NOUN
qv33rv06f6w	27	28	.	.	PUNCT
qv33rv06f6w	28	1	gan	gan	PROPN
qv33rv06f6w	28	2	hbd	hbd	PROPN
qv33rv06f6w	28	3	is	be	AUX
qv33rv06f6w	28	4	similar	similar	ADJ
qv33rv06f6w	28	5	to	to	ADP
qv33rv06f6w	28	6	gaas	gaas	NOUN
qv33rv06f6w	28	7	planar	planar	NOUN
qv33rv06f6w	28	8	doped	doped	NOUN
qv33rv06f6w	28	9	barrier	barrier	NOUN
qv33rv06f6w	28	10	(	(	PUNCT
qv33rv06f6w	28	11	pdb	pdb	NOUN
qv33rv06f6w	28	12	)	)	PUNCT
qv33rv06f6w	28	13	diode	diode	NOUN
qv33rv06f6w	28	14	.	.	PUNCT
qv33rv06f6w	29	1	the	the	DET
qv33rv06f6w	29	2	polarization	polarization	NOUN
qv33rv06f6w	29	3	charge	charge	NOUN
qv33rv06f6w	29	4	at	at	ADP
qv33rv06f6w	29	5	algan	algan	PROPN
qv33rv06f6w	29	6	/	/	SYM
qv33rv06f6w	29	7	gan	gan	PROPN
qv33rv06f6w	29	8	interface	interface	NOUN
qv33rv06f6w	29	9	behaves	behave	VERB
qv33rv06f6w	29	10	as	as	ADP
qv33rv06f6w	29	11	a	a	DET
qv33rv06f6w	29	12	delta	delta	NOUN
qv33rv06f6w	29	13	-	-	PUNCT
qv33rv06f6w	29	14	doping	doping	NOUN
qv33rv06f6w	29	15	which	which	PRON
qv33rv06f6w	29	16	induces	induce	VERB
qv33rv06f6w	29	17	a	a	DET
qv33rv06f6w	29	18	barrier	barrier	NOUN
qv33rv06f6w	29	19	without	without	ADP
qv33rv06f6w	29	20	any	any	DET
qv33rv06f6w	29	21	chemical	chemical	NOUN
qv33rv06f6w	29	22	doping	doping	NOUN
qv33rv06f6w	29	23	.	.	PUNCT
qv33rv06f6w	30	1	the	the	DET
qv33rv06f6w	30	2	iv	iv	PROPN
qv33rv06f6w	30	3	characteristics	characteristic	NOUN
qv33rv06f6w	30	4	can	can	AUX
qv33rv06f6w	30	5	be	be	AUX
qv33rv06f6w	30	6	explained	explain	VERB
qv33rv06f6w	30	7	by	by	ADP
qv33rv06f6w	30	8	the	the	DET
qv33rv06f6w	30	9	barrier	barrier	NOUN
qv33rv06f6w	30	10	controlled	control	VERB
qv33rv06f6w	30	11	thermionic	thermionic	ADJ
qv33rv06f6w	30	12	emission	emission	NOUN
qv33rv06f6w	30	13	current	current	NOUN
qv33rv06f6w	30	14	.	.	PUNCT
qv33rv06f6w	31	1	one	one	NUM
qv33rv06f6w	31	2	advantage	advantage	NOUN
qv33rv06f6w	31	3	of	of	ADP
qv33rv06f6w	31	4	gan	gan	PROPN
qv33rv06f6w	31	5	hbd	hbd	PROPN
qv33rv06f6w	31	6	is	be	AUX
qv33rv06f6w	31	7	the	the	DET
qv33rv06f6w	31	8	constant	constant	ADJ
qv33rv06f6w	31	9	capacitance	capacitance	NOUN
qv33rv06f6w	31	10	,	,	PUNCT
qv33rv06f6w	31	11	which	which	PRON
qv33rv06f6w	31	12	reduces	reduce	VERB
qv33rv06f6w	31	13	the	the	DET
qv33rv06f6w	31	14	nonlinearity	nonlinearity	NOUN
qv33rv06f6w	31	15	of	of	ADP
qv33rv06f6w	31	16	the	the	DET
qv33rv06f6w	31	17	device	device	NOUN
qv33rv06f6w	31	18	.	.	PUNCT
qv33rv06f6w	32	1	gan	gan	PROPN
qv33rv06f6w	32	2	hbds	hbds	PROPN
qv33rv06f6w	32	3	can	can	AUX
qv33rv06f6w	32	4	be	be	AUX
qv33rv06f6w	32	5	directly	directly	ADV
qv33rv06f6w	32	6	integrated	integrate	VERB
qv33rv06f6w	32	7	with	with	ADP
qv33rv06f6w	32	8	gan	gan	PROPN
qv33rv06f6w	32	9	hemts	hemts	PROPN
qv33rv06f6w	32	10	,	,	PUNCT
qv33rv06f6w	32	11	and	and	CCONJ
qv33rv06f6w	32	12	serve	serve	VERB
qv33rv06f6w	32	13	as	as	ADP
qv33rv06f6w	32	14	frequency	frequency	NOUN
qv33rv06f6w	32	15	multipliers	multiplier	NOUN
qv33rv06f6w	32	16	or	or	CCONJ
qv33rv06f6w	32	17	mixers	mixer	NOUN
qv33rv06f6w	32	18	for	for	ADP
qv33rv06f6w	32	19	rf	rf	PROPN
qv33rv06f6w	32	20	applications	application	NOUN
qv33rv06f6w	32	21	.	.	PUNCT
qv33rv06f6w	33	1	in	in	ADP
qv33rv06f6w	33	2	chapter	chapter	NOUN
qv33rv06f6w	33	3	6	6	NUM
qv33rv06f6w	33	4	,	,	PUNCT
qv33rv06f6w	33	5	a	a	DET
qv33rv06f6w	33	6	gan	gan	PROPN
qv33rv06f6w	33	7	based	base	VERB
qv33rv06f6w	33	8	negative	negative	ADJ
qv33rv06f6w	33	9	effective	effective	ADJ
qv33rv06f6w	33	10	mass	mass	NOUN
qv33rv06f6w	33	11	oscillator	oscillator	NOUN
qv33rv06f6w	33	12	(	(	PUNCT
qv33rv06f6w	33	13	nemo	nemo	PROPN
qv33rv06f6w	33	14	)	)	PUNCT
qv33rv06f6w	33	15	is	be	AUX
qv33rv06f6w	33	16	proposed	propose	VERB
qv33rv06f6w	33	17	.	.	PUNCT
qv33rv06f6w	34	1	in	in	ADP
qv33rv06f6w	34	2	the	the	DET
qv33rv06f6w	34	3	designed	design	VERB
qv33rv06f6w	34	4	structure	structure	NOUN
qv33rv06f6w	34	5	,	,	PUNCT
qv33rv06f6w	34	6	a	a	DET
qv33rv06f6w	34	7	graded	graded	ADJ
qv33rv06f6w	34	8	algan	algan	NOUN
qv33rv06f6w	34	9	emitter	emitter	NOUN
qv33rv06f6w	34	10	is	be	AUX
qv33rv06f6w	34	11	used	use	VERB
qv33rv06f6w	34	12	to	to	PART
qv33rv06f6w	34	13	inject	inject	VERB
qv33rv06f6w	34	14	hot	hot	ADJ
qv33rv06f6w	34	15	electrons	electron	NOUN
qv33rv06f6w	34	16	into	into	ADP
qv33rv06f6w	34	17	the	the	DET
qv33rv06f6w	34	18	gan	gan	PROPN
qv33rv06f6w	34	19	collector	collector	NOUN
qv33rv06f6w	34	20	.	.	PUNCT
qv33rv06f6w	35	1	the	the	DET
qv33rv06f6w	35	2	current	current	NOUN
qv33rv06f6w	35	3	in	in	ADP
qv33rv06f6w	35	4	nemo	nemo	PROPN
qv33rv06f6w	35	5	is	be	AUX
qv33rv06f6w	35	6	estimated	estimate	VERB
qv33rv06f6w	35	7	under	under	ADP
qv33rv06f6w	35	8	the	the	DET
qv33rv06f6w	35	9	ballistic	ballistic	ADJ
qv33rv06f6w	35	10	limits	limit	NOUN
qv33rv06f6w	35	11	.	.	PUNCT
qv33rv06f6w	36	1	negative	negative	ADJ
qv33rv06f6w	36	2	differential	differential	ADJ
qv33rv06f6w	36	3	resistances	resistance	NOUN
qv33rv06f6w	36	4	(	(	PUNCT
qv33rv06f6w	36	5	ndrs	ndrs	ADV
qv33rv06f6w	36	6	)	)	PUNCT
qv33rv06f6w	36	7	can	can	AUX
qv33rv06f6w	36	8	be	be	AUX
qv33rv06f6w	36	9	observed	observe	VERB
qv33rv06f6w	36	10	with	with	ADP
qv33rv06f6w	36	11	more	more	ADJ
qv33rv06f6w	36	12	than	than	ADP
qv33rv06f6w	36	13	50	50	NUM
qv33rv06f6w	36	14	%	%	NOUN
qv33rv06f6w	36	15	of	of	ADP
qv33rv06f6w	36	16	the	the	DET
qv33rv06f6w	36	17	injected	inject	VERB
qv33rv06f6w	36	18	electrons	electron	NOUN
qv33rv06f6w	36	19	occupied	occupy	VERB
qv33rv06f6w	36	20	the	the	DET
qv33rv06f6w	36	21	negative	negative	ADJ
qv33rv06f6w	36	22	effective	effective	ADJ
qv33rv06f6w	36	23	mass	mass	NOUN
qv33rv06f6w	36	24	(	(	PUNCT
qv33rv06f6w	36	25	nem	nem	NOUN
qv33rv06f6w	36	26	)	)	PUNCT
qv33rv06f6w	36	27	region	region	NOUN
qv33rv06f6w	36	28	.	.	PUNCT
qv33rv06f6w	37	1	the	the	DET
qv33rv06f6w	37	2	negative	negative	ADJ
qv33rv06f6w	37	3	effective	effective	ADJ
qv33rv06f6w	37	4	mass	mass	NOUN
qv33rv06f6w	37	5	oscillator	oscillator	NOUN
qv33rv06f6w	37	6	with	with	ADP
qv33rv06f6w	37	7	hot	hot	ADJ
qv33rv06f6w	37	8	electron	electron	NOUN
qv33rv06f6w	37	9	injection	injection	NOUN
qv33rv06f6w	37	10	has	have	AUX
qv33rv06f6w	37	11	been	be	AUX
qv33rv06f6w	37	12	simulated	simulate	VERB
qv33rv06f6w	37	13	by	by	ADP
qv33rv06f6w	37	14	solving	solve	VERB
qv33rv06f6w	37	15	the	the	DET
qv33rv06f6w	37	16	boltzmann	boltzmann	PROPN
qv33rv06f6w	37	17	transport	transport	PROPN
qv33rv06f6w	37	18	equation	equation	NOUN
qv33rv06f6w	37	19	in	in	ADP
qv33rv06f6w	37	20	1d	1d	DET
qv33rv06f6w	37	21	real	real	ADJ
qv33rv06f6w	37	22	-	-	PUNCT
qv33rv06f6w	37	23	space	space	NOUN
qv33rv06f6w	37	24	and	and	CCONJ
qv33rv06f6w	37	25	k	k	NOUN
qv33rv06f6w	37	26	-	-	NOUN
qv33rv06f6w	37	27	space	space	NOUN
qv33rv06f6w	37	28	.	.	PUNCT
qv33rv06f6w	38	1	a	a	DET
qv33rv06f6w	38	2	stable	stable	ADJ
qv33rv06f6w	38	3	self	self	NOUN
qv33rv06f6w	38	4	-	-	PUNCT
qv33rv06f6w	38	5	sustaining	sustain	VERB
qv33rv06f6w	38	6	current	current	ADJ
qv33rv06f6w	38	7	oscillation	oscillation	NOUN
qv33rv06f6w	38	8	is	be	AUX
qv33rv06f6w	38	9	observed	observe	VERB
qv33rv06f6w	38	10	.	.	PUNCT
qv33rv06f6w	39	1	the	the	DET
qv33rv06f6w	39	2	designed	design	VERB
qv33rv06f6w	39	3	nemo	nemo	NOUN
qv33rv06f6w	39	4	structures	structure	NOUN
qv33rv06f6w	39	5	are	be	AUX
qv33rv06f6w	39	6	grown	grow	VERB
qv33rv06f6w	39	7	by	by	ADP
qv33rv06f6w	39	8	mbe	mbe	PROPN
qv33rv06f6w	39	9	on	on	ADP
qv33rv06f6w	39	10	bulk	bulk	ADJ
qv33rv06f6w	39	11	gan	gan	PROPN
qv33rv06f6w	39	12	substrates	substrate	NOUN
qv33rv06f6w	39	13	.	.	PUNCT
qv33rv06f6w	40	1	ndrs	ndr	NOUN
qv33rv06f6w	40	2	are	be	AUX
qv33rv06f6w	40	3	observed	observe	VERB
qv33rv06f6w	40	4	in	in	ADP
qv33rv06f6w	40	5	four	four	NUM
qv33rv06f6w	40	6	nemo	nemo	NOUN
qv33rv06f6w	40	7	samples	sample	NOUN
qv33rv06f6w	40	8	under	under	ADP
qv33rv06f6w	40	9	dc	dc	PROPN
qv33rv06f6w	40	10	and	and	CCONJ
qv33rv06f6w	40	11	pulsed	pulse	VERB
qv33rv06f6w	40	12	measurements	measurement	NOUN
qv33rv06f6w	40	13	.	.	PUNCT
qv33rv06f6w	41	1	the	the	DET
qv33rv06f6w	41	2	influence	influence	NOUN
qv33rv06f6w	41	3	of	of	ADP
qv33rv06f6w	41	4	traps	trap	NOUN
qv33rv06f6w	41	5	and	and	CCONJ
qv33rv06f6w	41	6	defects	defect	NOUN
qv33rv06f6w	41	7	on	on	ADP
qv33rv06f6w	41	8	ndrs	ndrs	NOUN
qv33rv06f6w	41	9	is	be	AUX
qv33rv06f6w	41	10	also	also	ADV
qv33rv06f6w	41	11	discussed	discuss	VERB
qv33rv06f6w	41	12	.	.	PUNCT