id	sid	tid	token	lemma	pos
qr46qz2367g	1	1	microscopic	microscopic	ADJ
qr46qz2367g	1	2	properties	property	NOUN
qr46qz2367g	1	3	of	of	ADP
qr46qz2367g	1	4	semiconducting	semiconducte	VERB
qr46qz2367g	1	5	nanostructures	nanostructure	NOUN
qr46qz2367g	1	6	are	be	AUX
qr46qz2367g	1	7	very	very	ADV
qr46qz2367g	1	8	sensitive	sensitive	ADJ
qr46qz2367g	1	9	to	to	ADP
qr46qz2367g	1	10	perturbations	perturbation	NOUN
qr46qz2367g	1	11	at	at	ADP
qr46qz2367g	1	12	the	the	DET
qr46qz2367g	1	13	semiconductor	semiconductor	NOUN
qr46qz2367g	1	14	/	/	SYM
qr46qz2367g	1	15	environment	environment	NOUN
qr46qz2367g	1	16	surface	surface	NOUN
qr46qz2367g	1	17	.	.	PUNCT
qr46qz2367g	2	1	charge	charge	NOUN
qr46qz2367g	2	2	transport	transport	NOUN
qr46qz2367g	2	3	properties	property	NOUN
qr46qz2367g	2	4	in	in	ADP
qr46qz2367g	2	5	semiconducting	semiconducte	VERB
qr46qz2367g	2	6	nanostructures	nanostructure	NOUN
qr46qz2367g	2	7	can	can	AUX
qr46qz2367g	2	8	dramatically	dramatically	ADV
qr46qz2367g	2	9	change	change	VERB
qr46qz2367g	2	10	by	by	ADP
qr46qz2367g	2	11	the	the	DET
qr46qz2367g	2	12	interaction	interaction	NOUN
qr46qz2367g	2	13	mediated	mediate	VERB
qr46qz2367g	2	14	by	by	ADP
qr46qz2367g	2	15	the	the	DET
qr46qz2367g	2	16	dielectric	dielectric	ADJ
qr46qz2367g	2	17	environment	environment	NOUN
qr46qz2367g	2	18	surrounding	surround	VERB
qr46qz2367g	2	19	them	they	PRON
qr46qz2367g	2	20	.	.	PUNCT
qr46qz2367g	3	1	in	in	ADP
qr46qz2367g	3	2	this	this	DET
qr46qz2367g	3	3	work	work	NOUN
qr46qz2367g	3	4	,	,	PUNCT
qr46qz2367g	3	5	the	the	DET
qr46qz2367g	3	6	effect	effect	NOUN
qr46qz2367g	3	7	of	of	ADP
qr46qz2367g	3	8	the	the	DET
qr46qz2367g	3	9	dielectric	dielectric	ADJ
qr46qz2367g	3	10	mismatch	mismatch	NOUN
qr46qz2367g	3	11	between	between	ADP
qr46qz2367g	3	12	a	a	DET
qr46qz2367g	3	13	semiconductor	semiconductor	NOUN
qr46qz2367g	3	14	and	and	CCONJ
qr46qz2367g	3	15	its	its	PRON
qr46qz2367g	3	16	dielectric	dielectric	ADJ
qr46qz2367g	3	17	environment	environment	NOUN
qr46qz2367g	3	18	on	on	ADP
qr46qz2367g	3	19	charge	charge	NOUN
qr46qz2367g	3	20	transport	transport	NOUN
qr46qz2367g	3	21	in	in	ADP
qr46qz2367g	3	22	1d	1d	NUM
qr46qz2367g	3	23	quantum	quantum	ADJ
qr46qz2367g	3	24	wires	wire	NOUN
qr46qz2367g	3	25	and	and	CCONJ
qr46qz2367g	3	26	2d	2d	NOUN
qr46qz2367g	3	27	nanoscale	nanoscale	NOUN
qr46qz2367g	3	28	membranes	membrane	NOUN
qr46qz2367g	3	29	is	be	AUX
qr46qz2367g	3	30	investigated	investigate	VERB
qr46qz2367g	3	31	.	.	PUNCT
qr46qz2367g	4	1	it	it	PRON
qr46qz2367g	4	2	is	be	AUX
qr46qz2367g	4	3	shown	show	VERB
qr46qz2367g	4	4	that	that	SCONJ
qr46qz2367g	4	5	the	the	DET
qr46qz2367g	4	6	image	image	NOUN
qr46qz2367g	4	7	charges	charge	NOUN
qr46qz2367g	4	8	formed	form	VERB
qr46qz2367g	4	9	at	at	ADP
qr46qz2367g	4	10	the	the	DET
qr46qz2367g	4	11	semiconductor	semiconductor	NOUN
qr46qz2367g	4	12	/	/	SYM
qr46qz2367g	4	13	environment	environment	NOUN
qr46qz2367g	4	14	interfaces	interface	NOUN
qr46qz2367g	4	15	alter	alter	VERB
qr46qz2367g	4	16	the	the	DET
qr46qz2367g	4	17	coulomb	coulomb	NOUN
qr46qz2367g	4	18	potential	potential	NOUN
qr46qz2367g	4	19	and	and	CCONJ
qr46qz2367g	4	20	the	the	DET
qr46qz2367g	4	21	electron	electron	NOUN
qr46qz2367g	4	22	-	-	PUNCT
qr46qz2367g	4	23	electron	electron	NOUN
qr46qz2367g	4	24	interaction	interaction	NOUN
qr46qz2367g	4	25	inside	inside	ADP
qr46qz2367g	4	26	the	the	DET
qr46qz2367g	4	27	low	low	ADJ
qr46qz2367g	4	28	dimensional	dimensional	ADJ
qr46qz2367g	4	29	structures	structure	NOUN
qr46qz2367g	4	30	.	.	PUNCT
qr46qz2367g	5	1	it	it	PRON
qr46qz2367g	5	2	is	be	AUX
qr46qz2367g	5	3	predicted	predict	VERB
qr46qz2367g	5	4	that	that	SCONJ
qr46qz2367g	5	5	by	by	ADP
qr46qz2367g	5	6	coating	coat	VERB
qr46qz2367g	5	7	nanostructures	nanostructure	NOUN
qr46qz2367g	5	8	with	with	ADP
qr46qz2367g	5	9	high	high	ADJ
qr46qz2367g	5	10	-	-	PUNCT
qr46qz2367g	5	11	ì_å¼	ì_å¼	NOUN
qr46qz2367g	5	12	dielectrics	dielectric	NOUN
qr46qz2367g	5	13	,	,	PUNCT
qr46qz2367g	5	14	carrier	carrier	NOUN
qr46qz2367g	5	15	mobility	mobility	NOUN
qr46qz2367g	5	16	in	in	ADP
qr46qz2367g	5	17	quasi-1d	quasi-1d	PRON
qr46qz2367g	5	18	nanowires	nanowire	NOUN
qr46qz2367g	5	19	and	and	CCONJ
qr46qz2367g	5	20	quasi-2d	quasi-2d	NOUN
qr46qz2367g	5	21	nanomembranes	nanomembrane	NOUN
qr46qz2367g	5	22	can	can	AUX
qr46qz2367g	5	23	be	be	AUX
qr46qz2367g	5	24	enhanced	enhance	VERB
qr46qz2367g	5	25	by	by	ADP
qr46qz2367g	5	26	an	an	DET
qr46qz2367g	5	27	order	order	NOUN
qr46qz2367g	5	28	of	of	ADP
qr46qz2367g	5	29	magnitude	magnitude	NOUN
qr46qz2367g	5	30	if	if	SCONJ
qr46qz2367g	5	31	the	the	DET
qr46qz2367g	5	32	charge	charge	NOUN
qr46qz2367g	5	33	transport	transport	NOUN
qr46qz2367g	5	34	is	be	AUX
qr46qz2367g	5	35	impurity	impurity	NOUN
qr46qz2367g	5	36	-	-	PUNCT
qr46qz2367g	5	37	limited	limit	VERB
qr46qz2367g	5	38	.	.	PUNCT
qr46qz2367g	6	1	for	for	ADP
qr46qz2367g	6	2	perfect	perfect	ADJ
qr46qz2367g	6	3	2d	2d	NOUN
qr46qz2367g	6	4	crystals	crystal	NOUN
qr46qz2367g	6	5	such	such	ADJ
qr46qz2367g	6	6	as	as	ADP
qr46qz2367g	6	7	graphene	graphene	NOUN
qr46qz2367g	6	8	,	,	PUNCT
qr46qz2367g	6	9	this	this	DET
qr46qz2367g	6	10	mobility	mobility	NOUN
qr46qz2367g	6	11	enhancement	enhancement	NOUN
qr46qz2367g	6	12	is	be	AUX
qr46qz2367g	6	13	only	only	ADV
qr46qz2367g	6	14	possible	possible	ADJ
qr46qz2367g	6	15	at	at	ADP
qr46qz2367g	6	16	low	low	ADJ
qr46qz2367g	6	17	temperatures	temperature	NOUN
qr46qz2367g	6	18	,	,	PUNCT
qr46qz2367g	6	19	whereas	whereas	SCONJ
qr46qz2367g	6	20	at	at	ADP
qr46qz2367g	6	21	room	room	NOUN
qr46qz2367g	6	22	temperature	temperature	NOUN
qr46qz2367g	6	23	polar	polar	ADJ
qr46qz2367g	6	24	phonon	phonon	NOUN
qr46qz2367g	6	25	vibrations	vibration	NOUN
qr46qz2367g	6	26	originating	originate	VERB
qr46qz2367g	6	27	from	from	ADP
qr46qz2367g	6	28	the	the	DET
qr46qz2367g	6	29	dielectric	dielectric	ADJ
qr46qz2367g	6	30	environment	environment	NOUN
qr46qz2367g	6	31	wash	wash	VERB
qr46qz2367g	6	32	out	out	ADP
qr46qz2367g	6	33	the	the	DET
qr46qz2367g	6	34	advantages	advantage	NOUN
qr46qz2367g	6	35	of	of	ADP
qr46qz2367g	6	36	using	use	VERB
qr46qz2367g	6	37	high	high	ADJ
qr46qz2367g	6	38	-	-	PUNCT
qr46qz2367g	6	39	ì_å¼	ì_å¼	NOUN
qr46qz2367g	6	40	dielectrics	dielectric	NOUN
qr46qz2367g	6	41	.	.	PUNCT
qr46qz2367g	7	1	the	the	DET
qr46qz2367g	7	2	work	work	NOUN
qr46qz2367g	7	3	presented	present	VERB
qr46qz2367g	7	4	here	here	ADV
qr46qz2367g	7	5	will	will	AUX
qr46qz2367g	7	6	help	help	VERB
qr46qz2367g	7	7	to	to	PART
qr46qz2367g	7	8	identify	identify	VERB
qr46qz2367g	7	9	the	the	DET
qr46qz2367g	7	10	optimum	optimum	ADJ
qr46qz2367g	7	11	gate	gate	NOUN
qr46qz2367g	7	12	dielectric	dielectric	NOUN
qr46qz2367g	7	13	for	for	ADP
qr46qz2367g	7	14	designing	design	VERB
qr46qz2367g	7	15	high	high	ADJ
qr46qz2367g	7	16	-	-	PUNCT
qr46qz2367g	7	17	mobility	mobility	NOUN
qr46qz2367g	7	18	,	,	PUNCT
qr46qz2367g	7	19	high	high	ADJ
qr46qz2367g	7	20	-	-	PUNCT
qr46qz2367g	7	21	speed	speed	NOUN
qr46qz2367g	7	22	nanoscale	nanoscale	NOUN
qr46qz2367g	7	23	transistors	transistor	NOUN
qr46qz2367g	7	24	.	.	PUNCT