id	sid	tid	token	lemma	pos
q237hq41b85	1	1	moore	moore	PROPN
q237hq41b85	1	2	's	's	PART
q237hq41b85	1	3	law	law	NOUN
q237hq41b85	1	4	,	,	PUNCT
q237hq41b85	1	5	which	which	PRON
q237hq41b85	1	6	aims	aim	VERB
q237hq41b85	1	7	to	to	PART
q237hq41b85	1	8	double	double	VERB
q237hq41b85	1	9	the	the	DET
q237hq41b85	1	10	number	number	NOUN
q237hq41b85	1	11	of	of	ADP
q237hq41b85	1	12	transistors	transistor	NOUN
q237hq41b85	1	13	in	in	ADP
q237hq41b85	1	14	the	the	DET
q237hq41b85	1	15	same	same	ADJ
q237hq41b85	1	16	area	area	NOUN
q237hq41b85	1	17	every	every	DET
q237hq41b85	1	18	18	18	NUM
q237hq41b85	1	19	months	month	NOUN
q237hq41b85	1	20	,	,	PUNCT
q237hq41b85	1	21	has	have	AUX
q237hq41b85	1	22	been	be	AUX
q237hq41b85	1	23	in	in	ADP
q237hq41b85	1	24	full	full	ADJ
q237hq41b85	1	25	swing	swing	NOUN
q237hq41b85	1	26	over	over	ADP
q237hq41b85	1	27	the	the	DET
q237hq41b85	1	28	last	last	ADJ
q237hq41b85	1	29	60	60	NUM
q237hq41b85	1	30	years	year	NOUN
q237hq41b85	1	31	.	.	PUNCT
q237hq41b85	2	1	almost	almost	ADV
q237hq41b85	2	2	every	every	PRON
q237hq41b85	2	3	high	high	ADJ
q237hq41b85	2	4	-	-	PUNCT
q237hq41b85	2	5	performance	performance	NOUN
q237hq41b85	2	6	chip	chip	NOUN
q237hq41b85	2	7	company	company	NOUN
q237hq41b85	2	8	considered	consider	VERB
q237hq41b85	2	9	moving	move	VERB
q237hq41b85	2	10	to	to	ADP
q237hq41b85	2	11	the	the	DET
q237hq41b85	2	12	next	next	ADJ
q237hq41b85	2	13	available	available	ADJ
q237hq41b85	2	14	technology	technology	NOUN
q237hq41b85	2	15	node	node	NOUN
q237hq41b85	2	16	as	as	ADP
q237hq41b85	2	17	a	a	DET
q237hq41b85	2	18	primary	primary	ADJ
q237hq41b85	2	19	way	way	NOUN
q237hq41b85	2	20	to	to	PART
q237hq41b85	2	21	maximize	maximize	VERB
q237hq41b85	2	22	value	value	NOUN
q237hq41b85	2	23	,	,	PUNCT
q237hq41b85	2	24	however	however	ADV
q237hq41b85	2	25	,	,	PUNCT
q237hq41b85	2	26	with	with	ADP
q237hq41b85	2	27	moore	moore	NOUN
q237hq41b85	2	28	's	's	PART
q237hq41b85	2	29	law	law	NOUN
q237hq41b85	2	30	slowing	slow	VERB
q237hq41b85	2	31	down	down	ADP
q237hq41b85	2	32	,	,	PUNCT
q237hq41b85	2	33	it	it	PRON
q237hq41b85	2	34	is	be	AUX
q237hq41b85	2	35	necessary	necessary	ADJ
q237hq41b85	2	36	to	to	PART
q237hq41b85	2	37	start	start	VERB
q237hq41b85	2	38	looking	look	VERB
q237hq41b85	2	39	at	at	ADP
q237hq41b85	2	40	different	different	ADJ
q237hq41b85	2	41	strategies	strategy	NOUN
q237hq41b85	2	42	that	that	PRON
q237hq41b85	2	43	are	be	AUX
q237hq41b85	2	44	more	more	ADV
q237hq41b85	2	45	closely	closely	ADV
q237hq41b85	2	46	aligned	align	VERB
q237hq41b85	2	47	with	with	ADP
q237hq41b85	2	48	the	the	DET
q237hq41b85	2	49	individual	individual	ADJ
q237hq41b85	2	50	needs	need	NOUN
q237hq41b85	2	51	of	of	ADP
q237hq41b85	2	52	each	each	DET
q237hq41b85	2	53	application	application	NOUN
q237hq41b85	2	54	.	.	PUNCT
q237hq41b85	3	1	without	without	SCONJ
q237hq41b85	3	2	the	the	DET
q237hq41b85	3	3	expected	expect	VERB
q237hq41b85	3	4	device	device	NOUN
q237hq41b85	3	5	performance	performance	NOUN
q237hq41b85	3	6	boost	boost	VERB
q237hq41b85	3	7	every	every	DET
q237hq41b85	3	8	18	18	NUM
q237hq41b85	3	9	months	month	NOUN
q237hq41b85	3	10	,	,	PUNCT
q237hq41b85	3	11	industries	industry	NOUN
q237hq41b85	3	12	have	have	AUX
q237hq41b85	3	13	started	start	VERB
q237hq41b85	3	14	looking	look	VERB
q237hq41b85	3	15	closely	closely	ADV
q237hq41b85	3	16	at	at	ADP
q237hq41b85	3	17	each	each	DET
q237hq41b85	3	18	step	step	NOUN
q237hq41b85	3	19	in	in	ADP
q237hq41b85	3	20	the	the	DET
q237hq41b85	3	21	production	production	NOUN
q237hq41b85	3	22	chain	chain	NOUN
q237hq41b85	3	23	providing	provide	VERB
q237hq41b85	3	24	many	many	ADJ
q237hq41b85	3	25	opportunities	opportunity	NOUN
q237hq41b85	3	26	to	to	PART
q237hq41b85	3	27	improve	improve	VERB
q237hq41b85	3	28	performance	performance	NOUN
q237hq41b85	3	29	outside	outside	ADP
q237hq41b85	3	30	of	of	ADP
q237hq41b85	3	31	simply	simply	ADV
q237hq41b85	3	32	reducing	reduce	VERB
q237hq41b85	3	33	the	the	DET
q237hq41b85	3	34	scale	scale	NOUN
q237hq41b85	3	35	of	of	ADP
q237hq41b85	3	36	the	the	DET
q237hq41b85	3	37	transistors	transistor	NOUN
q237hq41b85	3	38	.	.	PUNCT
q237hq41b85	4	1	our	our	PRON
q237hq41b85	4	2	novel	novel	ADJ
q237hq41b85	4	3	work	work	NOUN
q237hq41b85	4	4	explores	explore	VERB
q237hq41b85	4	5	and	and	CCONJ
q237hq41b85	4	6	optimizes	optimize	VERB
q237hq41b85	4	7	oxide	oxide	NOUN
q237hq41b85	4	8	-	-	PUNCT
q237hq41b85	4	9	based	base	VERB
q237hq41b85	4	10	emerging	emerge	VERB
q237hq41b85	4	11	devices	device	NOUN
q237hq41b85	4	12	for	for	ADP
q237hq41b85	4	13	logic	logic	NOUN
q237hq41b85	4	14	,	,	PUNCT
q237hq41b85	4	15	memory	memory	NOUN
q237hq41b85	4	16	,	,	PUNCT
q237hq41b85	4	17	neuromorphic	neuromorphic	ADJ
q237hq41b85	4	18	computing	computing	NOUN
q237hq41b85	4	19	and	and	CCONJ
q237hq41b85	4	20	high	high	ADJ
q237hq41b85	4	21	frequency	frequency	NOUN
q237hq41b85	4	22	applications	application	NOUN
q237hq41b85	4	23	.	.	PUNCT
q237hq41b85	5	1	we	we	PRON
q237hq41b85	5	2	performed	perform	VERB
q237hq41b85	5	3	electrical	electrical	ADJ
q237hq41b85	5	4	characterization	characterization	NOUN
q237hq41b85	5	5	of	of	ADP
q237hq41b85	5	6	several	several	ADJ
q237hq41b85	5	7	devices	device	NOUN
q237hq41b85	5	8	and	and	CCONJ
q237hq41b85	5	9	developed	develop	VERB
q237hq41b85	5	10	high	high	ADJ
q237hq41b85	5	11	-	-	PUNCT
q237hq41b85	5	12	fidelity	fidelity	NOUN
q237hq41b85	5	13	,	,	PUNCT
q237hq41b85	5	14	compact	compact	ADJ
q237hq41b85	5	15	circuit	circuit	NOUN
q237hq41b85	5	16	-	-	PUNCT
q237hq41b85	5	17	level	level	NOUN
q237hq41b85	5	18	models	model	NOUN
q237hq41b85	5	19	.	.	PUNCT
q237hq41b85	6	1	these	these	DET
q237hq41b85	6	2	models	model	NOUN
q237hq41b85	6	3	bridge	bridge	VERB
q237hq41b85	6	4	the	the	DET
q237hq41b85	6	5	different	different	ADJ
q237hq41b85	6	6	levels	level	NOUN
q237hq41b85	6	7	of	of	ADP
q237hq41b85	6	8	the	the	DET
q237hq41b85	6	9	supply	supply	NOUN
q237hq41b85	6	10	chain	chain	NOUN
q237hq41b85	6	11	allowing	allow	VERB
q237hq41b85	6	12	us	we	PRON
q237hq41b85	6	13	to	to	PART
q237hq41b85	6	14	exploit	exploit	VERB
q237hq41b85	6	15	the	the	DET
q237hq41b85	6	16	performance	performance	NOUN
q237hq41b85	6	17	of	of	ADP
q237hq41b85	6	18	these	these	DET
q237hq41b85	6	19	novel	novel	ADJ
q237hq41b85	6	20	devices	device	NOUN
q237hq41b85	6	21	for	for	ADP
q237hq41b85	6	22	specific	specific	ADJ
q237hq41b85	6	23	applications	application	NOUN
q237hq41b85	6	24	.	.	PUNCT
q237hq41b85	7	1	for	for	ADP
q237hq41b85	7	2	instance	instance	NOUN
q237hq41b85	7	3	,	,	PUNCT
q237hq41b85	7	4	for	for	ADP
q237hq41b85	7	5	logic	logic	NOUN
q237hq41b85	7	6	applications	application	NOUN
q237hq41b85	7	7	we	we	PRON
q237hq41b85	7	8	modeled	model	VERB
q237hq41b85	7	9	,	,	PUNCT
q237hq41b85	7	10	built	build	VERB
q237hq41b85	7	11	,	,	PUNCT
q237hq41b85	7	12	and	and	CCONJ
q237hq41b85	7	13	tested	test	VERB
q237hq41b85	7	14	doped	dope	VERB
q237hq41b85	7	15	-	-	PUNCT
q237hq41b85	7	16	hafnuim	hafnuim	PROPN
q237hq41b85	7	17	dioxide	dioxide	NOUN
q237hq41b85	7	18	based	base	VERB
q237hq41b85	7	19	ferroelectric	ferroelectric	ADJ
q237hq41b85	7	20	field	field	NOUN
q237hq41b85	7	21	effect	effect	NOUN
q237hq41b85	7	22	transistors	transistor	NOUN
q237hq41b85	7	23	(	(	PUNCT
q237hq41b85	7	24	fefet	fefet	NOUN
q237hq41b85	7	25	)	)	PUNCT
q237hq41b85	7	26	.	.	PUNCT
q237hq41b85	8	1	we	we	PRON
q237hq41b85	8	2	then	then	ADV
q237hq41b85	8	3	utilized	utilize	VERB
q237hq41b85	8	4	these	these	DET
q237hq41b85	8	5	experimentally	experimentally	ADV
q237hq41b85	8	6	calibrated	calibrate	VERB
q237hq41b85	8	7	compact	compact	ADJ
q237hq41b85	8	8	models	model	NOUN
q237hq41b85	8	9	to	to	PART
q237hq41b85	8	10	explore	explore	VERB
q237hq41b85	8	11	the	the	DET
q237hq41b85	8	12	phenomenon	phenomenon	NOUN
q237hq41b85	8	13	of	of	ADP
q237hq41b85	8	14	negative	negative	ADJ
q237hq41b85	8	15	capacitance	capacitance	NOUN
q237hq41b85	8	16	(	(	PUNCT
q237hq41b85	8	17	nc	nc	PROPN
q237hq41b85	8	18	)	)	PUNCT
q237hq41b85	8	19	.	.	PUNCT
q237hq41b85	9	1	this	this	DET
q237hq41b85	9	2	phenomenon	phenomenon	NOUN
q237hq41b85	9	3	can	can	AUX
q237hq41b85	9	4	be	be	AUX
q237hq41b85	9	5	harnessed	harness	VERB
q237hq41b85	9	6	to	to	PART
q237hq41b85	9	7	provide	provide	VERB
q237hq41b85	9	8	a	a	DET
q237hq41b85	9	9	boost	boost	NOUN
q237hq41b85	9	10	in	in	ADP
q237hq41b85	9	11	logic	logic	NOUN
q237hq41b85	9	12	transistor	transistor	NOUN
q237hq41b85	9	13	performance	performance	NOUN
q237hq41b85	9	14	.	.	PUNCT
q237hq41b85	10	1	we	we	PRON
q237hq41b85	10	2	also	also	ADV
q237hq41b85	10	3	proposed	propose	VERB
q237hq41b85	10	4	and	and	CCONJ
q237hq41b85	10	5	experimentally	experimentally	ADV
q237hq41b85	10	6	demonstrated	demonstrate	VERB
q237hq41b85	10	7	the	the	DET
q237hq41b85	10	8	utilization	utilization	NOUN
q237hq41b85	10	9	of	of	ADP
q237hq41b85	10	10	an	an	DET
q237hq41b85	10	11	amorphous	amorphous	ADJ
q237hq41b85	10	12	semiconductor	semiconductor	NOUN
q237hq41b85	10	13	oxide	oxide	NOUN
q237hq41b85	10	14	channel	channel	NOUN
q237hq41b85	10	15	transistor	transistor	NOUN
q237hq41b85	10	16	using	use	VERB
q237hq41b85	10	17	a	a	DET
q237hq41b85	10	18	tungsten	tungsten	NOUN
q237hq41b85	10	19	-	-	PUNCT
q237hq41b85	10	20	doped	dope	VERB
q237hq41b85	10	21	indium	indium	NOUN
q237hq41b85	10	22	oxide	oxide	NOUN
q237hq41b85	10	23	transistor	transistor	NOUN
q237hq41b85	10	24	.	.	PUNCT
q237hq41b85	11	1	this	this	DET
q237hq41b85	11	2	transistor	transistor	NOUN
q237hq41b85	11	3	provides	provide	VERB
q237hq41b85	11	4	ultra	ultra	ADJ
q237hq41b85	11	5	-	-	ADJ
q237hq41b85	11	6	low	low	ADJ
q237hq41b85	11	7	leakage	leakage	NOUN
q237hq41b85	11	8	and	and	CCONJ
q237hq41b85	11	9	is	be	AUX
q237hq41b85	11	10	back	back	ADV
q237hq41b85	11	11	-	-	PUNCT
q237hq41b85	11	12	end	end	NOUN
q237hq41b85	11	13	-	-	PUNCT
q237hq41b85	11	14	of	of	ADP
q237hq41b85	11	15	-	-	PUNCT
q237hq41b85	11	16	line	line	NOUN
q237hq41b85	11	17	(	(	PUNCT
q237hq41b85	11	18	beol	beol	ADV
q237hq41b85	11	19	)	)	PUNCT
q237hq41b85	11	20	compatible	compatible	ADJ
q237hq41b85	11	21	.	.	PUNCT
q237hq41b85	12	1	using	use	VERB
q237hq41b85	12	2	these	these	DET
q237hq41b85	12	3	devices	device	NOUN
q237hq41b85	12	4	,	,	PUNCT
q237hq41b85	12	5	we	we	PRON
q237hq41b85	12	6	modeled	model	VERB
q237hq41b85	12	7	,	,	PUNCT
q237hq41b85	12	8	built	build	VERB
q237hq41b85	12	9	,	,	PUNCT
q237hq41b85	12	10	and	and	CCONJ
q237hq41b85	12	11	tested	test	VERB
q237hq41b85	12	12	a	a	DET
q237hq41b85	12	13	beol	beol	ADV
q237hq41b85	12	14	compatible	compatible	ADJ
q237hq41b85	12	15	embedded	embed	VERB
q237hq41b85	12	16	dram	dram	NOUN
q237hq41b85	12	17	(	(	PUNCT
q237hq41b85	12	18	edram	edram	PROPN
q237hq41b85	12	19	)	)	PUNCT
q237hq41b85	12	20	with	with	ADP
q237hq41b85	12	21	ultra	ultra	ADJ
q237hq41b85	12	22	-	-	ADJ
q237hq41b85	12	23	long	long	ADJ
q237hq41b85	12	24	refresh	refresh	ADJ
q237hq41b85	12	25	time	time	NOUN
q237hq41b85	12	26	.	.	PUNCT