id	sid	tid	token	lemma	pos
pc289g5798w	1	1	high	high	ADJ
pc289g5798w	1	2	index	index	NOUN
pc289g5798w	1	3	contrast	contrast	NOUN
pc289g5798w	1	4	(	(	PUNCT
pc289g5798w	1	5	hic	hic	PROPN
pc289g5798w	1	6	)	)	PUNCT
pc289g5798w	1	7	optical	optical	ADJ
pc289g5798w	1	8	waveguides	waveguide	NOUN
pc289g5798w	1	9	permit	permit	VERB
pc289g5798w	1	10	a	a	DET
pc289g5798w	1	11	move	move	NOUN
pc289g5798w	1	12	towards	towards	ADP
pc289g5798w	1	13	very	very	ADV
pc289g5798w	1	14	large	large	ADJ
pc289g5798w	1	15	scale	scale	NOUN
pc289g5798w	1	16	integration	integration	NOUN
pc289g5798w	1	17	of	of	ADP
pc289g5798w	1	18	photonic	photonic	ADJ
pc289g5798w	1	19	integrated	integrate	VERB
pc289g5798w	1	20	circuits	circuit	NOUN
pc289g5798w	1	21	(	(	PUNCT
pc289g5798w	1	22	pics	pic	NOUN
pc289g5798w	1	23	)	)	PUNCT
pc289g5798w	1	24	,	,	PUNCT
pc289g5798w	1	25	primarily	primarily	ADV
pc289g5798w	1	26	because	because	SCONJ
pc289g5798w	1	27	of	of	ADP
pc289g5798w	1	28	the	the	DET
pc289g5798w	1	29	very	very	ADV
pc289g5798w	1	30	small	small	ADJ
pc289g5798w	1	31	waveguide	waveguide	NOUN
pc289g5798w	1	32	bending	bend	VERB
pc289g5798w	1	33	radius	radius	NOUN
pc289g5798w	1	34	achievable	achievable	ADJ
pc289g5798w	1	35	.	.	PUNCT
pc289g5798w	2	1	a	a	DET
pc289g5798w	2	2	novel	novel	ADJ
pc289g5798w	2	3	self	self	NOUN
pc289g5798w	2	4	-	-	PUNCT
pc289g5798w	2	5	aligned	align	VERB
pc289g5798w	2	6	fabrication	fabrication	NOUN
pc289g5798w	2	7	process	process	NOUN
pc289g5798w	2	8	combining	combine	VERB
pc289g5798w	2	9	conventional	conventional	ADJ
pc289g5798w	2	10	dry	dry	ADJ
pc289g5798w	2	11	etching	etching	NOUN
pc289g5798w	2	12	and	and	CCONJ
pc289g5798w	2	13	a	a	DET
pc289g5798w	2	14	unique	unique	ADJ
pc289g5798w	2	15	non	non	ADJ
pc289g5798w	2	16	-	-	ADJ
pc289g5798w	2	17	selective	selective	ADJ
pc289g5798w	2	18	(	(	PUNCT
pc289g5798w	2	19	i.e.	i.e.	X
pc289g5798w	2	20	,	,	PUNCT
pc289g5798w	2	21	oxygen	oxygen	NOUN
pc289g5798w	2	22	-	-	PUNCT
pc289g5798w	2	23	enhanced	enhance	VERB
pc289g5798w	2	24	)	)	PUNCT
pc289g5798w	2	25	wet	wet	ADJ
pc289g5798w	2	26	thermal	thermal	ADJ
pc289g5798w	2	27	oxidation	oxidation	NOUN
pc289g5798w	2	28	technique	technique	NOUN
pc289g5798w	2	29	for	for	ADP
pc289g5798w	2	30	gaas	gaas	NOUN
pc289g5798w	2	31	-	-	PUNCT
pc289g5798w	2	32	based	base	VERB
pc289g5798w	2	33	heterostructures	heterostructure	NOUN
pc289g5798w	2	34	is	be	AUX
pc289g5798w	2	35	demonstrated	demonstrate	VERB
pc289g5798w	2	36	in	in	ADP
pc289g5798w	2	37	which	which	PRON
pc289g5798w	2	38	a	a	DET
pc289g5798w	2	39	layer	layer	NOUN
pc289g5798w	2	40	of	of	ADP
pc289g5798w	2	41	native	native	ADJ
pc289g5798w	2	42	oxide	oxide	NOUN
pc289g5798w	2	43	is	be	AUX
pc289g5798w	2	44	formed	form	VERB
pc289g5798w	2	45	on	on	ADP
pc289g5798w	2	46	the	the	DET
pc289g5798w	2	47	sidewall	sidewall	NOUN
pc289g5798w	2	48	and	and	CCONJ
pc289g5798w	2	49	base	base	NOUN
pc289g5798w	2	50	of	of	ADP
pc289g5798w	2	51	an	an	DET
pc289g5798w	2	52	etch	etch	NOUN
pc289g5798w	2	53	-	-	PUNCT
pc289g5798w	2	54	defined	define	VERB
pc289g5798w	2	55	mesa	mesa	NOUN
pc289g5798w	2	56	,	,	PUNCT
pc289g5798w	2	57	largely	largely	ADV
pc289g5798w	2	58	simplifying	simplify	VERB
pc289g5798w	2	59	the	the	DET
pc289g5798w	2	60	fabrication	fabrication	NOUN
pc289g5798w	2	61	by	by	ADP
pc289g5798w	2	62	simultaneously	simultaneously	ADV
pc289g5798w	2	63	providing	provide	VERB
pc289g5798w	2	64	both	both	DET
pc289g5798w	2	65	electrical	electrical	ADJ
pc289g5798w	2	66	insulation	insulation	NOUN
pc289g5798w	2	67	(	(	PUNCT
pc289g5798w	2	68	eliminating	eliminate	VERB
pc289g5798w	2	69	the	the	DET
pc289g5798w	2	70	need	need	NOUN
pc289g5798w	2	71	for	for	ADP
pc289g5798w	2	72	a	a	DET
pc289g5798w	2	73	deposited	deposit	VERB
pc289g5798w	2	74	dielectric	dielectric	NOUN
pc289g5798w	2	75	and	and	CCONJ
pc289g5798w	2	76	additional	additional	ADJ
pc289g5798w	2	77	mask	mask	NOUN
pc289g5798w	2	78	step	step	NOUN
pc289g5798w	2	79	)	)	PUNCT
pc289g5798w	2	80	and	and	CCONJ
pc289g5798w	2	81	effective	effective	ADJ
pc289g5798w	2	82	optical	optical	ADJ
pc289g5798w	2	83	mode	mode	NOUN
pc289g5798w	2	84	confinement	confinement	NOUN
pc289g5798w	2	85	.	.	PUNCT
pc289g5798w	3	1	oxidation	oxidation	NOUN
pc289g5798w	3	2	smoothing	smoothing	NOUN
pc289g5798w	3	3	,	,	PUNCT
pc289g5798w	3	4	a	a	DET
pc289g5798w	3	5	new	new	ADJ
pc289g5798w	3	6	technique	technique	NOUN
pc289g5798w	3	7	allowing	allow	VERB
pc289g5798w	3	8	ultra	ultra	ADJ
pc289g5798w	3	9	-	-	ADJ
pc289g5798w	3	10	low	low	ADJ
pc289g5798w	3	11	loss	loss	NOUN
pc289g5798w	3	12	hic	hic	PROPN
pc289g5798w	3	13	waveguides	waveguide	NOUN
pc289g5798w	3	14	,	,	PUNCT
pc289g5798w	3	15	is	be	AUX
pc289g5798w	3	16	demonstrated	demonstrate	VERB
pc289g5798w	3	17	for	for	ADP
pc289g5798w	3	18	the	the	DET
pc289g5798w	3	19	first	first	ADJ
pc289g5798w	3	20	time	time	NOUN
pc289g5798w	3	21	in	in	ADP
pc289g5798w	3	22	iii	iii	NUM
pc289g5798w	3	23	-	-	PUNCT
pc289g5798w	3	24	v	v	NOUN
pc289g5798w	3	25	compound	compound	NOUN
pc289g5798w	3	26	semiconductor	semiconductor	NOUN
pc289g5798w	3	27	heterostructures	heterostructure	NOUN
pc289g5798w	3	28	via	via	ADP
pc289g5798w	3	29	non	non	ADJ
pc289g5798w	3	30	-	-	ADJ
pc289g5798w	3	31	selective	selective	ADJ
pc289g5798w	3	32	oxidation	oxidation	NOUN
pc289g5798w	3	33	.	.	PUNCT
pc289g5798w	4	1	excellent	excellent	ADJ
pc289g5798w	4	2	device	device	NOUN
pc289g5798w	4	3	performance	performance	NOUN
pc289g5798w	4	4	(	(	PUNCT
pc289g5798w	4	5	low	low	ADJ
pc289g5798w	4	6	threshold	threshold	NOUN
pc289g5798w	4	7	current	current	ADJ
pc289g5798w	4	8	,	,	PUNCT
pc289g5798w	4	9	high	high	ADJ
pc289g5798w	4	10	efficiency	efficiency	NOUN
pc289g5798w	4	11	,	,	PUNCT
pc289g5798w	4	12	stable	stable	ADJ
pc289g5798w	4	13	-	-	PUNCT
pc289g5798w	4	14	mode	mode	NOUN
pc289g5798w	4	15	operation	operation	NOUN
pc289g5798w	4	16	)	)	PUNCT
pc289g5798w	4	17	is	be	AUX
pc289g5798w	4	18	achieved	achieve	VERB
pc289g5798w	4	19	for	for	ADP
pc289g5798w	4	20	808	808	NUM
pc289g5798w	4	21	nm	nm	NOUN
pc289g5798w	4	22	graded	grade	VERB
pc289g5798w	4	23	-	-	PUNCT
pc289g5798w	4	24	index	index	NOUN
pc289g5798w	4	25	separate	separate	ADJ
pc289g5798w	4	26	confinement	confinement	NOUN
pc289g5798w	4	27	heterostructure	heterostructure	NOUN
pc289g5798w	4	28	(	(	PUNCT
pc289g5798w	4	29	grinsch	grinsch	PROPN
pc289g5798w	4	30	)	)	PUNCT
pc289g5798w	4	31	hic	hic	PROPN
pc289g5798w	4	32	laser	laser	NOUN
pc289g5798w	4	33	diodes	diode	NOUN
pc289g5798w	4	34	in	in	ADP
pc289g5798w	4	35	both	both	CCONJ
pc289g5798w	4	36	straight	straight	ADJ
pc289g5798w	4	37	and	and	CCONJ
pc289g5798w	4	38	curved	curved	ADJ
pc289g5798w	4	39	geometries	geometry	NOUN
pc289g5798w	4	40	,	,	PUNCT
pc289g5798w	4	41	indicating	indicate	VERB
pc289g5798w	4	42	a	a	DET
pc289g5798w	4	43	low	low	ADJ
pc289g5798w	4	44	surface	surface	NOUN
pc289g5798w	4	45	state	state	NOUN
pc289g5798w	4	46	density	density	NOUN
pc289g5798w	4	47	at	at	ADP
pc289g5798w	4	48	the	the	DET
pc289g5798w	4	49	semiconductor	semiconductor	NOUN
pc289g5798w	4	50	/	/	SYM
pc289g5798w	4	51	oxide	oxide	NOUN
pc289g5798w	4	52	interface	interface	NOUN
pc289g5798w	4	53	.	.	PUNCT
pc289g5798w	5	1	a	a	DET
pc289g5798w	5	2	record	record	ADJ
pc289g5798w	5	3	small	small	ADJ
pc289g5798w	5	4	(	(	PUNCT
pc289g5798w	5	5	r=10	r=10	PROPN
pc289g5798w	5	6	micron	micron	PROPN
pc289g5798w	5	7	)	)	PUNCT
pc289g5798w	5	8	radius	radius	NOUN
pc289g5798w	5	9	half	half	ADJ
pc289g5798w	5	10	-	-	PUNCT
pc289g5798w	5	11	racetrack	racetrack	NOUN
pc289g5798w	5	12	-	-	PUNCT
pc289g5798w	5	13	ring	ring	NOUN
pc289g5798w	5	14	resonator	resonator	NOUN
pc289g5798w	5	15	laser	laser	NOUN
pc289g5798w	5	16	diode	diode	NOUN
pc289g5798w	5	17	patterned	pattern	VERB
pc289g5798w	5	18	by	by	ADP
pc289g5798w	5	19	conventional	conventional	ADJ
pc289g5798w	5	20	photolithography	photolithography	NOUN
pc289g5798w	5	21	is	be	AUX
pc289g5798w	5	22	demonstrated	demonstrate	VERB
pc289g5798w	5	23	.	.	PUNCT
pc289g5798w	6	1	a	a	DET
pc289g5798w	6	2	strong	strong	ADJ
pc289g5798w	6	3	lateral	lateral	ADJ
pc289g5798w	6	4	optical	optical	ADJ
pc289g5798w	6	5	confinement	confinement	ADJ
pc289g5798w	6	6	factor	factor	NOUN
pc289g5798w	6	7	also	also	ADV
pc289g5798w	6	8	leads	lead	VERB
pc289g5798w	6	9	to	to	ADP
pc289g5798w	6	10	a	a	DET
pc289g5798w	6	11	1.39	1.39	NUM
pc289g5798w	6	12	micron	micron	NOUN
pc289g5798w	6	13	wide	wide	ADJ
pc289g5798w	6	14	aperture	aperture	NOUN
pc289g5798w	6	15	laser	laser	NOUN
pc289g5798w	6	16	with	with	ADP
pc289g5798w	6	17	a	a	DET
pc289g5798w	6	18	nearly	nearly	ADV
pc289g5798w	6	19	symmetric	symmetric	ADJ
pc289g5798w	6	20	output	output	NOUN
pc289g5798w	6	21	beam	beam	NOUN
pc289g5798w	6	22	,	,	PUNCT
pc289g5798w	6	23	showing	show	VERB
pc289g5798w	6	24	the	the	DET
pc289g5798w	6	25	great	great	ADJ
pc289g5798w	6	26	potential	potential	NOUN
pc289g5798w	6	27	of	of	ADP
pc289g5798w	6	28	the	the	DET
pc289g5798w	6	29	hic	hic	PROPN
pc289g5798w	6	30	laser	laser	NOUN
pc289g5798w	6	31	structure	structure	NOUN
pc289g5798w	6	32	to	to	PART
pc289g5798w	6	33	overcome	overcome	VERB
pc289g5798w	6	34	longtime	longtime	ADJ
pc289g5798w	6	35	limitations	limitation	NOUN
pc289g5798w	6	36	in	in	ADP
pc289g5798w	6	37	edge	edge	NOUN
pc289g5798w	6	38	-	-	PUNCT
pc289g5798w	6	39	emitting	emit	VERB
pc289g5798w	6	40	lasers	laser	NOUN
pc289g5798w	6	41	of	of	ADP
pc289g5798w	6	42	asymmetric	asymmetric	ADJ
pc289g5798w	6	43	beam	beam	NOUN
pc289g5798w	6	44	divergence	divergence	NOUN
pc289g5798w	6	45	and	and	CCONJ
pc289g5798w	6	46	large	large	ADJ
pc289g5798w	6	47	astigmatism	astigmatism	NOUN
pc289g5798w	6	48	.	.	PUNCT
pc289g5798w	7	1	detailed	detailed	ADJ
pc289g5798w	7	2	stripe	stripe	NOUN
pc289g5798w	7	3	width	width	NOUN
pc289g5798w	7	4	dependent	dependent	ADJ
pc289g5798w	7	5	studies	study	NOUN
pc289g5798w	7	6	also	also	ADV
pc289g5798w	7	7	highlight	highlight	VERB
pc289g5798w	7	8	the	the	DET
pc289g5798w	7	9	tremendous	tremendous	ADJ
pc289g5798w	7	10	performance	performance	NOUN
pc289g5798w	7	11	improvement	improvement	NOUN
pc289g5798w	7	12	due	due	ADP
pc289g5798w	7	13	to	to	ADP
pc289g5798w	7	14	the	the	DET
pc289g5798w	7	15	elimination	elimination	NOUN
pc289g5798w	7	16	of	of	ADP
pc289g5798w	7	17	current	current	ADJ
pc289g5798w	7	18	spreading	spread	VERB
pc289g5798w	7	19	by	by	ADP
pc289g5798w	7	20	the	the	DET
pc289g5798w	7	21	hic	hic	PROPN
pc289g5798w	7	22	structure	structure	NOUN
pc289g5798w	7	23	.	.	PUNCT
pc289g5798w	8	1	as	as	ADP
pc289g5798w	8	2	the	the	DET
pc289g5798w	8	3	most	most	ADV
pc289g5798w	8	4	critical	critical	ADJ
pc289g5798w	8	5	factor	factor	NOUN
pc289g5798w	8	6	for	for	ADP
pc289g5798w	8	7	active	active	ADJ
pc289g5798w	8	8	devices	device	NOUN
pc289g5798w	8	9	,	,	PUNCT
pc289g5798w	8	10	interface	interface	NOUN
pc289g5798w	8	11	passivation	passivation	NOUN
pc289g5798w	8	12	is	be	AUX
pc289g5798w	8	13	qualitatively	qualitatively	ADV
pc289g5798w	8	14	studied	study	VERB
pc289g5798w	8	15	by	by	ADP
pc289g5798w	8	16	varying	vary	VERB
pc289g5798w	8	17	the	the	DET
pc289g5798w	8	18	native	native	ADJ
pc289g5798w	8	19	oxide	oxide	NOUN
pc289g5798w	8	20	thickness	thickness	NOUN
pc289g5798w	8	21	,	,	PUNCT
pc289g5798w	8	22	comparing	compare	VERB
pc289g5798w	8	23	native	native	ADJ
pc289g5798w	8	24	oxides	oxide	NOUN
pc289g5798w	8	25	with	with	ADP
pc289g5798w	8	26	conventional	conventional	ADJ
pc289g5798w	8	27	plasma	plasma	NOUN
pc289g5798w	8	28	-	-	PUNCT
pc289g5798w	8	29	enhanced	enhance	VERB
pc289g5798w	8	30	chemical	chemical	NOUN
pc289g5798w	8	31	vapor	vapor	NOUN
pc289g5798w	8	32	deposition	deposition	NOUN
pc289g5798w	8	33	(	(	PUNCT
pc289g5798w	8	34	pecvd	pecvd	PROPN
pc289g5798w	8	35	)	)	PUNCT
pc289g5798w	8	36	silicon	silicon	NOUN
pc289g5798w	8	37	dioxide	dioxide	NOUN
pc289g5798w	8	38	,	,	PUNCT
pc289g5798w	8	39	and	and	CCONJ
pc289g5798w	8	40	conducting	conduct	VERB
pc289g5798w	8	41	an	an	DET
pc289g5798w	8	42	initial	initial	ADJ
pc289g5798w	8	43	reliability	reliability	NOUN
pc289g5798w	8	44	test	test	NOUN
pc289g5798w	8	45	on	on	ADP
pc289g5798w	8	46	an	an	DET
pc289g5798w	8	47	unbonded	unbonded	ADJ
pc289g5798w	8	48	straight	straight	ADJ
pc289g5798w	8	49	laser	laser	NOUN
pc289g5798w	8	50	.	.	PUNCT
pc289g5798w	9	1	wet	wet	ADJ
pc289g5798w	9	2	thermal	thermal	ADJ
pc289g5798w	9	3	oxidation	oxidation	NOUN
pc289g5798w	9	4	is	be	AUX
pc289g5798w	9	5	also	also	ADV
pc289g5798w	9	6	demonstrated	demonstrate	VERB
pc289g5798w	9	7	for	for	ADP
pc289g5798w	9	8	the	the	DET
pc289g5798w	9	9	first	first	ADJ
pc289g5798w	9	10	time	time	NOUN
pc289g5798w	9	11	on	on	ADP
pc289g5798w	9	12	1.3	1.3	NUM
pc289g5798w	9	13	micron	micron	NOUN
pc289g5798w	9	14	dilute	dilute	NOUN
pc289g5798w	9	15	-	-	PUNCT
pc289g5798w	9	16	nitride	nitride	NOUN
pc289g5798w	9	17	and	and	CCONJ
pc289g5798w	9	18	mid	mid	ADJ
pc289g5798w	9	19	-	-	ADJ
pc289g5798w	9	20	ir	ir	ADJ
pc289g5798w	9	21	quantum	quantum	NOUN
pc289g5798w	9	22	cascade	cascade	NOUN
pc289g5798w	9	23	laser	laser	NOUN
pc289g5798w	9	24	(	(	PUNCT
pc289g5798w	9	25	qcl	qcl	NOUN
pc289g5798w	9	26	)	)	PUNCT
pc289g5798w	9	27	structures	structure	NOUN
pc289g5798w	9	28	with	with	ADP
pc289g5798w	9	29	al	al	PROPN
pc289g5798w	9	30	-	-	PUNCT
pc289g5798w	9	31	free	free	ADJ
pc289g5798w	9	32	active	active	ADJ
pc289g5798w	9	33	regions	region	NOUN
pc289g5798w	9	34	,	,	PUNCT
pc289g5798w	9	35	with	with	ADP
pc289g5798w	9	36	enhanced	enhanced	ADJ
pc289g5798w	9	37	dilute	dilute	NOUN
pc289g5798w	9	38	-	-	PUNCT
pc289g5798w	9	39	nitride	nitride	NOUN
pc289g5798w	9	40	laser	laser	NOUN
pc289g5798w	9	41	performance	performance	NOUN
pc289g5798w	9	42	achieved	achieve	VERB
pc289g5798w	9	43	.	.	PUNCT
pc289g5798w	10	1	potential	potential	ADJ
pc289g5798w	10	2	benefits	benefit	NOUN
pc289g5798w	10	3	of	of	ADP
pc289g5798w	10	4	the	the	DET
pc289g5798w	10	5	oxide	oxide	NOUN
pc289g5798w	10	6	-	-	PUNCT
pc289g5798w	10	7	confined	confine	VERB
pc289g5798w	10	8	hic	hic	PROPN
pc289g5798w	10	9	structure	structure	NOUN
pc289g5798w	10	10	for	for	ADP
pc289g5798w	10	11	high	high	ADJ
pc289g5798w	10	12	-	-	PUNCT
pc289g5798w	10	13	power	power	NOUN
pc289g5798w	10	14	laser	laser	NOUN
pc289g5798w	10	15	diode	diode	NOUN
pc289g5798w	10	16	bars	bar	NOUN
pc289g5798w	10	17	and	and	CCONJ
pc289g5798w	10	18	other	other	ADJ
pc289g5798w	10	19	devices	device	NOUN
pc289g5798w	10	20	are	be	AUX
pc289g5798w	10	21	also	also	ADV
pc289g5798w	10	22	addressed	address	VERB
pc289g5798w	10	23	.	.	PUNCT
pc289g5798w	11	1	the	the	DET
pc289g5798w	11	2	simplified	simplified	ADJ
pc289g5798w	11	3	hic	hic	PROPN
pc289g5798w	11	4	laser	laser	NOUN
pc289g5798w	11	5	fabrication	fabrication	NOUN
pc289g5798w	11	6	process	process	NOUN
pc289g5798w	11	7	developed	develop	VERB
pc289g5798w	11	8	in	in	ADP
pc289g5798w	11	9	this	this	DET
pc289g5798w	11	10	work	work	NOUN
pc289g5798w	11	11	also	also	ADV
pc289g5798w	11	12	shows	show	VERB
pc289g5798w	11	13	the	the	DET
pc289g5798w	11	14	great	great	ADJ
pc289g5798w	11	15	potential	potential	NOUN
pc289g5798w	11	16	of	of	ADP
pc289g5798w	11	17	non	non	ADJ
pc289g5798w	11	18	-	-	ADJ
pc289g5798w	11	19	selective	selective	ADJ
pc289g5798w	11	20	oxidation	oxidation	NOUN
pc289g5798w	11	21	for	for	ADP
pc289g5798w	11	22	future	future	ADJ
pc289g5798w	11	23	high	high	ADJ
pc289g5798w	11	24	density	density	NOUN
pc289g5798w	11	25	pics	pic	NOUN
pc289g5798w	11	26	.	.	PUNCT