id	sid	tid	token	lemma	pos
p2676t07f0c	1	1	heterostructure	heterostructure	NOUN
p2676t07f0c	1	2	backward	backward	ADJ
p2676t07f0c	1	3	diodes	diode	NOUN
p2676t07f0c	1	4	based	base	VERB
p2676t07f0c	1	5	on	on	ADP
p2676t07f0c	1	6	the	the	DET
p2676t07f0c	1	7	inas	inas	PROPN
p2676t07f0c	1	8	/	/	SYM
p2676t07f0c	1	9	alsb	alsb	PROPN
p2676t07f0c	1	10	/	/	SYM
p2676t07f0c	1	11	gasb	gasb	PROPN
p2676t07f0c	1	12	material	material	NOUN
p2676t07f0c	1	13	system	system	NOUN
p2676t07f0c	1	14	have	have	AUX
p2676t07f0c	1	15	been	be	AUX
p2676t07f0c	1	16	designed	design	VERB
p2676t07f0c	1	17	,	,	PUNCT
p2676t07f0c	1	18	fabricated	fabricate	VERB
p2676t07f0c	1	19	and	and	CCONJ
p2676t07f0c	1	20	characterized	characterized	ADJ
p2676t07f0c	1	21	.	.	PUNCT
p2676t07f0c	2	1	fabrication	fabrication	NOUN
p2676t07f0c	2	2	processes	process	NOUN
p2676t07f0c	2	3	have	have	AUX
p2676t07f0c	2	4	been	be	AUX
p2676t07f0c	2	5	developed	develop	VERB
p2676t07f0c	2	6	based	base	VERB
p2676t07f0c	2	7	on	on	ADP
p2676t07f0c	2	8	conventional	conventional	ADJ
p2676t07f0c	2	9	photolithography	photolithography	NOUN
p2676t07f0c	2	10	,	,	PUNCT
p2676t07f0c	2	11	wet	wet	ADJ
p2676t07f0c	2	12	chemical	chemical	NOUN
p2676t07f0c	2	13	etching	etching	NOUN
p2676t07f0c	2	14	,	,	PUNCT
p2676t07f0c	2	15	planarization	planarization	NOUN
p2676t07f0c	2	16	and	and	CCONJ
p2676t07f0c	2	17	passivation	passivation	NOUN
p2676t07f0c	2	18	techniques	technique	NOUN
p2676t07f0c	2	19	.	.	PUNCT
p2676t07f0c	3	1	the	the	DET
p2676t07f0c	3	2	performance	performance	NOUN
p2676t07f0c	3	3	of	of	ADP
p2676t07f0c	3	4	devices	device	NOUN
p2676t07f0c	3	5	based	base	VERB
p2676t07f0c	3	6	on	on	ADP
p2676t07f0c	3	7	three	three	NUM
p2676t07f0c	3	8	different	different	ADJ
p2676t07f0c	3	9	heterostructures	heterostructure	NOUN
p2676t07f0c	3	10	is	be	AUX
p2676t07f0c	3	11	compared	compare	VERB
p2676t07f0c	3	12	.	.	PUNCT
p2676t07f0c	4	1	devices	device	NOUN
p2676t07f0c	4	2	incorporating	incorporate	VERB
p2676t07f0c	4	3	an	an	DET
p2676t07f0c	4	4	al0.1ga0.9sb	al0.1ga0.9sb	ADJ
p2676t07f0c	4	5	anode	anode	NOUN
p2676t07f0c	4	6	instead	instead	ADV
p2676t07f0c	4	7	of	of	ADP
p2676t07f0c	4	8	a	a	DET
p2676t07f0c	4	9	gasb	gasb	PROPN
p2676t07f0c	4	10	anode	anode	PROPN
p2676t07f0c	4	11	show	show	VERB
p2676t07f0c	4	12	improved	improved	ADJ
p2676t07f0c	4	13	curvature	curvature	NOUN
p2676t07f0c	4	14	coefficient	coefficient	NOUN
p2676t07f0c	4	15	.	.	PUNCT
p2676t07f0c	5	1	a	a	DET
p2676t07f0c	5	2	junction	junction	NOUN
p2676t07f0c	5	3	capacitance	capacitance	NOUN
p2676t07f0c	5	4	of	of	ADP
p2676t07f0c	5	5	15.5	15.5	NUM
p2676t07f0c	5	6	ff	ff	NOUN
p2676t07f0c	5	7	/	/	SYM
p2676t07f0c	5	8	um^2	um^2	ADJ
p2676t07f0c	5	9	and	and	CCONJ
p2676t07f0c	5	10	a	a	DET
p2676t07f0c	5	11	junction	junction	NOUN
p2676t07f0c	5	12	resistance	resistance	NOUN
p2676t07f0c	5	13	of	of	ADP
p2676t07f0c	5	14	2.5	2.5	NUM
p2676t07f0c	5	15	kiloohm*um^2	kiloohm*um^2	PROPN
p2676t07f0c	5	16	have	have	AUX
p2676t07f0c	5	17	been	be	AUX
p2676t07f0c	5	18	obtained	obtain	VERB
p2676t07f0c	5	19	on	on	ADP
p2676t07f0c	5	20	a	a	DET
p2676t07f0c	5	21	structure	structure	NOUN
p2676t07f0c	5	22	with	with	ADP
p2676t07f0c	5	23	a	a	DET
p2676t07f0c	5	24	p	p	NOUN
p2676t07f0c	5	25	-	-	PUNCT
p2676t07f0c	5	26	gasb	gasb	ADJ
p2676t07f0c	5	27	anode	anode	NOUN
p2676t07f0c	5	28	.	.	PUNCT
p2676t07f0c	6	1	for	for	ADP
p2676t07f0c	6	2	a	a	DET
p2676t07f0c	6	3	device	device	NOUN
p2676t07f0c	6	4	with	with	ADP
p2676t07f0c	6	5	area	area	NOUN
p2676t07f0c	6	6	of	of	ADP
p2676t07f0c	6	7	7.6	7.6	NUM
p2676t07f0c	6	8	um^2	um^2	ADJ
p2676t07f0c	6	9	,	,	PUNCT
p2676t07f0c	6	10	a	a	DET
p2676t07f0c	6	11	curvature	curvature	NOUN
p2676t07f0c	6	12	coefficient	coefficient	NOUN
p2676t07f0c	6	13	of	of	ADP
p2676t07f0c	6	14	-20.9	-20.9	NOUN
p2676t07f0c	6	15	v^(-1	v^(-1	PROPN
p2676t07f0c	6	16	)	)	PUNCT
p2676t07f0c	6	17	,	,	PUNCT
p2676t07f0c	6	18	a	a	DET
p2676t07f0c	6	19	junction	junction	NOUN
p2676t07f0c	6	20	capacitance	capacitance	NOUN
p2676t07f0c	6	21	of	of	ADP
p2676t07f0c	6	22	85.3	85.3	NUM
p2676t07f0c	6	23	ff	ff	PROPN
p2676t07f0c	6	24	,	,	PUNCT
p2676t07f0c	6	25	and	and	CCONJ
p2676t07f0c	6	26	a	a	DET
p2676t07f0c	6	27	junction	junction	NOUN
p2676t07f0c	6	28	resistance	resistance	NOUN
p2676t07f0c	6	29	of	of	ADP
p2676t07f0c	6	30	291.7	291.7	NUM
p2676t07f0c	6	31	ohm	ohm	NOUN
p2676t07f0c	6	32	were	be	AUX
p2676t07f0c	6	33	obtained	obtain	VERB
p2676t07f0c	6	34	.	.	PUNCT
p2676t07f0c	7	1	based	base	VERB
p2676t07f0c	7	2	on	on	ADP
p2676t07f0c	7	3	estimates	estimate	NOUN
p2676t07f0c	7	4	of	of	ADP
p2676t07f0c	7	5	potential	potential	NOUN
p2676t07f0c	7	6	for	for	ADP
p2676t07f0c	7	7	contact	contact	NOUN
p2676t07f0c	7	8	resistance	resistance	NOUN
p2676t07f0c	7	9	improvement	improvement	NOUN
p2676t07f0c	7	10	and	and	CCONJ
p2676t07f0c	7	11	device	device	NOUN
p2676t07f0c	7	12	scaling	scaling	NOUN
p2676t07f0c	7	13	(	(	PUNCT
p2676t07f0c	7	14	down	down	ADV
p2676t07f0c	7	15	to	to	ADP
p2676t07f0c	7	16	1	1	NUM
p2676t07f0c	7	17	um^2	um^2	NOUN
p2676t07f0c	7	18	)	)	PUNCT
p2676t07f0c	7	19	,	,	PUNCT
p2676t07f0c	7	20	improvement	improvement	NOUN
p2676t07f0c	7	21	of	of	ADP
p2676t07f0c	7	22	the	the	DET
p2676t07f0c	7	23	intrinsic	intrinsic	ADJ
p2676t07f0c	7	24	cut	cut	NOUN
p2676t07f0c	7	25	-	-	PUNCT
p2676t07f0c	7	26	off	off	ADP
p2676t07f0c	7	27	frequency	frequency	NOUN
p2676t07f0c	7	28	to	to	ADP
p2676t07f0c	7	29	over	over	ADP
p2676t07f0c	7	30	500	500	NUM
p2676t07f0c	7	31	ghz	ghz	NOUN
p2676t07f0c	7	32	appears	appear	VERB
p2676t07f0c	7	33	possible	possible	ADJ
p2676t07f0c	7	34	for	for	ADP
p2676t07f0c	7	35	this	this	DET
p2676t07f0c	7	36	structure	structure	NOUN
p2676t07f0c	7	37	.	.	PUNCT
p2676t07f0c	8	1	johnson	johnson	PROPN
p2676t07f0c	8	2	noise	noise	PROPN
p2676t07f0c	8	3	limited	limit	VERB
p2676t07f0c	8	4	noise	noise	NOUN
p2676t07f0c	8	5	equivalent	equivalent	ADJ
p2676t07f0c	8	6	power	power	NOUN
p2676t07f0c	8	7	(	(	PUNCT
p2676t07f0c	8	8	nep	nep	ADV
p2676t07f0c	8	9	)	)	PUNCT
p2676t07f0c	8	10	is	be	AUX
p2676t07f0c	8	11	estimated	estimate	VERB
p2676t07f0c	8	12	to	to	PART
p2676t07f0c	8	13	be	be	AUX
p2676t07f0c	8	14	1.05	1.05	NUM
p2676t07f0c	8	15	pw	pw	NOUN
p2676t07f0c	8	16	/	/	SYM
p2676t07f0c	8	17	square	square	ADJ
p2676t07f0c	8	18	root(hz	root(hz	NOUN
p2676t07f0c	8	19	)	)	PUNCT
p2676t07f0c	8	20	for	for	ADP
p2676t07f0c	8	21	a	a	DET
p2676t07f0c	8	22	conjugately	conjugately	ADV
p2676t07f0c	8	23	-	-	PUNCT
p2676t07f0c	8	24	matched	match	VERB
p2676t07f0c	8	25	source	source	NOUN
p2676t07f0c	8	26	.	.	PUNCT
p2676t07f0c	9	1	the	the	DET
p2676t07f0c	9	2	detector	detector	NOUN
p2676t07f0c	9	3	's	's	PART
p2676t07f0c	9	4	figures	figure	NOUN
p2676t07f0c	9	5	of	of	ADP
p2676t07f0c	9	6	merit	merit	NOUN
p2676t07f0c	9	7	can	can	AUX
p2676t07f0c	9	8	be	be	AUX
p2676t07f0c	9	9	further	far	ADV
p2676t07f0c	9	10	improved	improve	VERB
p2676t07f0c	9	11	through	through	ADP
p2676t07f0c	9	12	additional	additional	ADJ
p2676t07f0c	9	13	optimization	optimization	NOUN
p2676t07f0c	9	14	of	of	ADP
p2676t07f0c	9	15	the	the	DET
p2676t07f0c	9	16	heterostructure	heterostructure	NOUN
p2676t07f0c	9	17	and	and	CCONJ
p2676t07f0c	9	18	fabrication	fabrication	NOUN
p2676t07f0c	9	19	processes	process	NOUN
p2676t07f0c	9	20	.	.	PUNCT