id	sid	tid	token	lemma	pos
ns064457k93	1	1	tunneling	tunneling	NOUN
ns064457k93	1	2	field	field	NOUN
ns064457k93	1	3	effect	effect	NOUN
ns064457k93	1	4	transistors	transistor	NOUN
ns064457k93	1	5	(	(	PUNCT
ns064457k93	1	6	tfets	tfets	X
ns064457k93	1	7	)	)	PUNCT
ns064457k93	1	8	have	have	AUX
ns064457k93	1	9	recently	recently	ADV
ns064457k93	1	10	attracted	attract	VERB
ns064457k93	1	11	considerable	considerable	ADJ
ns064457k93	1	12	interest	interest	NOUN
ns064457k93	1	13	because	because	SCONJ
ns064457k93	1	14	of	of	ADP
ns064457k93	1	15	their	their	PRON
ns064457k93	1	16	potential	potential	ADJ
ns064457k93	1	17	use	use	NOUN
ns064457k93	1	18	in	in	ADP
ns064457k93	1	19	low	low	ADJ
ns064457k93	1	20	power	power	NOUN
ns064457k93	1	21	logic	logic	NOUN
ns064457k93	1	22	applications	application	NOUN
ns064457k93	1	23	.	.	PUNCT
ns064457k93	2	1	the	the	DET
ns064457k93	2	2	major	major	ADJ
ns064457k93	2	3	advantage	advantage	NOUN
ns064457k93	2	4	of	of	ADP
ns064457k93	2	5	tunnel	tunnel	NOUN
ns064457k93	2	6	transistors	transistor	NOUN
ns064457k93	2	7	is	be	AUX
ns064457k93	2	8	the	the	DET
ns064457k93	2	9	possibility	possibility	NOUN
ns064457k93	2	10	to	to	PART
ns064457k93	2	11	achieve	achieve	VERB
ns064457k93	2	12	less	less	ADJ
ns064457k93	2	13	than	than	ADP
ns064457k93	2	14	60	60	NUM
ns064457k93	2	15	mv	mv	PROPN
ns064457k93	2	16	/	/	SYM
ns064457k93	2	17	decade	decade	NOUN
ns064457k93	2	18	sub	sub	ADJ
ns064457k93	2	19	-	-	ADJ
ns064457k93	2	20	threshold	threshold	ADJ
ns064457k93	2	21	swing	swing	NOUN
ns064457k93	2	22	,	,	PUNCT
ns064457k93	2	23	which	which	PRON
ns064457k93	2	24	is	be	AUX
ns064457k93	2	25	the	the	DET
ns064457k93	2	26	thermionic	thermionic	ADJ
ns064457k93	2	27	limit	limit	NOUN
ns064457k93	2	28	in	in	ADP
ns064457k93	2	29	conventional	conventional	ADJ
ns064457k93	2	30	mosfets	mosfet	NOUN
ns064457k93	2	31	.	.	PUNCT
ns064457k93	3	1	in	in	ADP
ns064457k93	3	2	this	this	DET
ns064457k93	3	3	work	work	NOUN
ns064457k93	3	4	,	,	PUNCT
ns064457k93	3	5	simulation	simulation	NOUN
ns064457k93	3	6	of	of	ADP
ns064457k93	3	7	iii	iii	NUM
ns064457k93	3	8	-	-	PUNCT
ns064457k93	3	9	v	v	NOUN
ns064457k93	3	10	semiconductor	semiconductor	NOUN
ns064457k93	3	11	based	base	VERB
ns064457k93	3	12	tunnel	tunnel	NOUN
ns064457k93	3	13	transistors	transistor	NOUN
ns064457k93	3	14	has	have	AUX
ns064457k93	3	15	been	be	AUX
ns064457k93	3	16	explored	explore	VERB
ns064457k93	3	17	using	use	VERB
ns064457k93	3	18	both	both	PRON
ns064457k93	3	19	commercially	commercially	ADV
ns064457k93	3	20	available	available	ADJ
ns064457k93	3	21	simulator	simulator	NOUN
ns064457k93	3	22	(	(	PUNCT
ns064457k93	3	23	synopsys	synopsys	PROPN
ns064457k93	3	24	tcad	tcad	PROPN
ns064457k93	3	25	)	)	PUNCT
ns064457k93	3	26	and	and	CCONJ
ns064457k93	3	27	novel	novel	ADJ
ns064457k93	3	28	analytical	analytical	ADJ
ns064457k93	3	29	compact	compact	ADJ
ns064457k93	3	30	models	model	NOUN
ns064457k93	3	31	.	.	PUNCT
ns064457k93	4	1	synopsys	synopsys	PROPN
ns064457k93	4	2	tcad	tcad	PROPN
ns064457k93	4	3	was	be	AUX
ns064457k93	4	4	used	use	VERB
ns064457k93	4	5	to	to	PART
ns064457k93	4	6	simulate	simulate	VERB
ns064457k93	4	7	inas	inas	PROPN
ns064457k93	4	8	homo	homo	ADJ
ns064457k93	4	9	-	-	PUNCT
ns064457k93	4	10	junction	junction	NOUN
ns064457k93	4	11	tfet	tfet	NOUN
ns064457k93	4	12	.	.	PUNCT
ns064457k93	5	1	for	for	ADP
ns064457k93	5	2	the	the	DET
ns064457k93	5	3	purpose	purpose	NOUN
ns064457k93	5	4	of	of	ADP
ns064457k93	5	5	obtaining	obtain	VERB
ns064457k93	5	6	higher	high	ADJ
ns064457k93	5	7	device	device	NOUN
ns064457k93	5	8	performance	performance	NOUN
ns064457k93	5	9	,	,	PUNCT
ns064457k93	5	10	the	the	DET
ns064457k93	5	11	use	use	NOUN
ns064457k93	5	12	of	of	ADP
ns064457k93	5	13	algasb	algasb	PROPN
ns064457k93	5	14	/	/	SYM
ns064457k93	5	15	inas	inas	PROPN
ns064457k93	5	16	heterostructures	heterostructure	NOUN
ns064457k93	5	17	was	be	AUX
ns064457k93	5	18	then	then	ADV
ns064457k93	5	19	explored	explore	VERB
ns064457k93	5	20	.	.	PUNCT
ns064457k93	6	1	contrary	contrary	ADJ
ns064457k93	6	2	to	to	ADP
ns064457k93	6	3	expectations	expectation	NOUN
ns064457k93	6	4	,	,	PUNCT
ns064457k93	6	5	it	it	PRON
ns064457k93	6	6	was	be	AUX
ns064457k93	6	7	observed	observe	VERB
ns064457k93	6	8	that	that	SCONJ
ns064457k93	6	9	the	the	DET
ns064457k93	6	10	simulation	simulation	NOUN
ns064457k93	6	11	predicts	predict	VERB
ns064457k93	6	12	dramatic	dramatic	ADJ
ns064457k93	6	13	changes	change	NOUN
ns064457k93	6	14	in	in	ADP
ns064457k93	6	15	device	device	NOUN
ns064457k93	6	16	performance	performance	NOUN
ns064457k93	6	17	as	as	ADP
ns064457k93	6	18	a	a	DET
ns064457k93	6	19	function	function	NOUN
ns064457k93	6	20	of	of	ADP
ns064457k93	6	21	algasb	algasb	PROPN
ns064457k93	6	22	composition	composition	NOUN
ns064457k93	6	23	.	.	PUNCT
ns064457k93	7	1	in	in	ADP
ns064457k93	7	2	order	order	NOUN
ns064457k93	7	3	to	to	PART
ns064457k93	7	4	gain	gain	VERB
ns064457k93	7	5	more	more	ADJ
ns064457k93	7	6	physical	physical	ADJ
ns064457k93	7	7	insight	insight	NOUN
ns064457k93	7	8	,	,	PUNCT
ns064457k93	7	9	also	also	ADV
ns064457k93	7	10	to	to	PART
ns064457k93	7	11	reduce	reduce	VERB
ns064457k93	7	12	computer	computer	NOUN
ns064457k93	7	13	simulation	simulation	NOUN
ns064457k93	7	14	time	time	NOUN
ns064457k93	7	15	,	,	PUNCT
ns064457k93	7	16	a	a	DET
ns064457k93	7	17	compact	compact	ADJ
ns064457k93	7	18	model	model	NOUN
ns064457k93	7	19	was	be	AUX
ns064457k93	7	20	built	build	VERB
ns064457k93	7	21	to	to	PART
ns064457k93	7	22	simulate	simulate	VERB
ns064457k93	7	23	the	the	DET
ns064457k93	7	24	tunnel	tunnel	NOUN
ns064457k93	7	25	transistors	transistor	NOUN
ns064457k93	7	26	.	.	PUNCT
ns064457k93	8	1	analytical	analytical	ADJ
ns064457k93	8	2	expressions	expression	NOUN
ns064457k93	8	3	for	for	ADP
ns064457k93	8	4	the	the	DET
ns064457k93	8	5	electrical	electrical	ADJ
ns064457k93	8	6	potential	potential	NOUN
ns064457k93	8	7	in	in	ADP
ns064457k93	8	8	single	single	ADJ
ns064457k93	8	9	-	-	PUNCT
ns064457k93	8	10	gate	gate	NOUN
ns064457k93	8	11	(	(	PUNCT
ns064457k93	8	12	sg	sg	PROPN
ns064457k93	8	13	)	)	PUNCT
ns064457k93	8	14	,	,	PUNCT
ns064457k93	8	15	double	double	ADJ
ns064457k93	8	16	-	-	PUNCT
ns064457k93	8	17	gate	gate	NOUN
ns064457k93	8	18	(	(	PUNCT
ns064457k93	8	19	dg	dg	PROPN
ns064457k93	8	20	)	)	PUNCT
ns064457k93	8	21	and	and	CCONJ
ns064457k93	8	22	gate	gate	NOUN
ns064457k93	8	23	-	-	PUNCT
ns064457k93	8	24	all	all	PRON
ns064457k93	8	25	-	-	PUNCT
ns064457k93	8	26	around	around	ADV
ns064457k93	8	27	(	(	PUNCT
ns064457k93	8	28	gaa	gaa	PROPN
ns064457k93	8	29	)	)	PUNCT
ns064457k93	8	30	tunnel	tunnel	NOUN
ns064457k93	8	31	transistors	transistor	NOUN
ns064457k93	8	32	have	have	AUX
ns064457k93	8	33	been	be	AUX
ns064457k93	8	34	derived	derive	VERB
ns064457k93	8	35	.	.	PUNCT
ns064457k93	9	1	the	the	DET
ns064457k93	9	2	model	model	NOUN
ns064457k93	9	3	predicts	predict	VERB
ns064457k93	9	4	that	that	SCONJ
ns064457k93	9	5	the	the	DET
ns064457k93	9	6	gaa	gaa	PROPN
ns064457k93	9	7	geometry	geometry	NOUN
ns064457k93	9	8	is	be	AUX
ns064457k93	9	9	not	not	PART
ns064457k93	9	10	always	always	ADV
ns064457k93	9	11	the	the	DET
ns064457k93	9	12	best	good	ADJ
ns064457k93	9	13	geometry	geometry	NOUN
ns064457k93	9	14	when	when	SCONJ
ns064457k93	9	15	quantum	quantum	ADJ
ns064457k93	9	16	confinement	confinement	NOUN
ns064457k93	9	17	is	be	AUX
ns064457k93	9	18	included	include	VERB
ns064457k93	9	19	in	in	ADP
ns064457k93	9	20	the	the	DET
ns064457k93	9	21	model	model	NOUN
ns064457k93	9	22	.	.	PUNCT