id	sid	tid	token	lemma	pos
mw22v40840g	1	1	quantum	quantum	NOUN
mw22v40840g	1	2	-	-	PUNCT
mw22v40840g	1	3	dot	dot	NOUN
mw22v40840g	1	4	cellular	cellular	NOUN
mw22v40840g	1	5	automata	automata	PROPN
mw22v40840g	1	6	(	(	PUNCT
mw22v40840g	1	7	qca	qca	PROPN
mw22v40840g	1	8	)	)	PUNCT
mw22v40840g	1	9	provides	provide	VERB
mw22v40840g	1	10	a	a	DET
mw22v40840g	1	11	new	new	ADJ
mw22v40840g	1	12	paradigm	paradigm	NOUN
mw22v40840g	1	13	for	for	ADP
mw22v40840g	1	14	computation	computation	NOUN
mw22v40840g	1	15	and	and	CCONJ
mw22v40840g	1	16	for	for	ADP
mw22v40840g	1	17	the	the	DET
mw22v40840g	1	18	design	design	NOUN
mw22v40840g	1	19	of	of	ADP
mw22v40840g	1	20	electronic	electronic	ADJ
mw22v40840g	1	21	devices	device	NOUN
mw22v40840g	1	22	[	[	PUNCT
mw22v40840g	1	23	1	1	NUM
mw22v40840g	1	24	]	]	PUNCT
mw22v40840g	1	25	.	.	PUNCT
mw22v40840g	2	1	the	the	DET
mw22v40840g	2	2	past	past	ADJ
mw22v40840g	2	3	40	40	NUM
mw22v40840g	2	4	years	year	NOUN
mw22v40840g	2	5	have	have	AUX
mw22v40840g	2	6	seen	see	VERB
mw22v40840g	2	7	great	great	ADJ
mw22v40840g	2	8	technological	technological	ADJ
mw22v40840g	2	9	advancement	advancement	NOUN
mw22v40840g	2	10	brought	bring	VERB
mw22v40840g	2	11	about	about	ADP
mw22v40840g	2	12	by	by	ADP
mw22v40840g	2	13	the	the	DET
mw22v40840g	2	14	densification	densification	NOUN
mw22v40840g	2	15	of	of	ADP
mw22v40840g	2	16	transistor	transistor	NOUN
mw22v40840g	2	17	-	-	PUNCT
mw22v40840g	2	18	based	base	VERB
mw22v40840g	2	19	circuitry	circuitry	NOUN
mw22v40840g	2	20	.	.	PUNCT
mw22v40840g	3	1	as	as	SCONJ
mw22v40840g	3	2	transistors	transistor	NOUN
mw22v40840g	3	3	are	be	AUX
mw22v40840g	3	4	reduced	reduce	VERB
mw22v40840g	3	5	in	in	ADP
mw22v40840g	3	6	size	size	NOUN
mw22v40840g	3	7	problems	problem	NOUN
mw22v40840g	3	8	such	such	ADJ
mw22v40840g	3	9	as	as	ADP
mw22v40840g	3	10	device	device	NOUN
mw22v40840g	3	11	density	density	NOUN
mw22v40840g	3	12	,	,	PUNCT
mw22v40840g	3	13	device	device	NOUN
mw22v40840g	3	14	interconnection	interconnection	NOUN
mw22v40840g	3	15	and	and	CCONJ
mw22v40840g	3	16	power	power	NOUN
mw22v40840g	3	17	dissipation	dissipation	NOUN
mw22v40840g	3	18	become	become	VERB
mw22v40840g	3	19	increasingly	increasingly	ADV
mw22v40840g	3	20	hard	hard	ADJ
mw22v40840g	3	21	to	to	PART
mw22v40840g	3	22	overcome	overcome	VERB
mw22v40840g	3	23	and	and	CCONJ
mw22v40840g	3	24	short	short	ADJ
mw22v40840g	3	25	-	-	PUNCT
mw22v40840g	3	26	channel	channel	NOUN
mw22v40840g	3	27	effects	effect	NOUN
mw22v40840g	3	28	degrade	degrade	VERB
mw22v40840g	3	29	device	device	NOUN
mw22v40840g	3	30	performance	performance	NOUN
mw22v40840g	3	31	.	.	PUNCT
mw22v40840g	4	1	in	in	ADP
mw22v40840g	4	2	light	light	NOUN
mw22v40840g	4	3	of	of	ADP
mw22v40840g	4	4	these	these	DET
mw22v40840g	4	5	problems	problem	NOUN
mw22v40840g	4	6	,	,	PUNCT
mw22v40840g	4	7	a	a	DET
mw22v40840g	4	8	new	new	ADJ
mw22v40840g	4	9	architecture	architecture	NOUN
mw22v40840g	4	10	is	be	AUX
mw22v40840g	4	11	needed	need	VERB
mw22v40840g	4	12	to	to	PART
mw22v40840g	4	13	enable	enable	VERB
mw22v40840g	4	14	the	the	DET
mw22v40840g	4	15	shrinking	shrinking	NOUN
mw22v40840g	4	16	of	of	ADP
mw22v40840g	4	17	electronic	electronic	ADJ
mw22v40840g	4	18	devices	device	NOUN
mw22v40840g	4	19	down	down	ADP
mw22v40840g	4	20	to	to	ADP
mw22v40840g	4	21	molecular	molecular	ADJ
mw22v40840g	4	22	sizes	size	NOUN
mw22v40840g	4	23	.	.	PUNCT
mw22v40840g	5	1	qca	qca	PROPN
mw22v40840g	5	2	provides	provide	VERB
mw22v40840g	5	3	this	this	DET
mw22v40840g	5	4	new	new	ADJ
mw22v40840g	5	5	architecture	architecture	NOUN
mw22v40840g	5	6	by	by	ADP
mw22v40840g	5	7	encoding	encode	VERB
mw22v40840g	5	8	binary	binary	ADJ
mw22v40840g	5	9	information	information	NOUN
mw22v40840g	5	10	in	in	ADP
mw22v40840g	5	11	the	the	DET
mw22v40840g	5	12	bistable	bistable	ADJ
mw22v40840g	5	13	charge	charge	NOUN
mw22v40840g	5	14	configuration	configuration	NOUN
mw22v40840g	5	15	of	of	ADP
mw22v40840g	5	16	quantum	quantum	NOUN
mw22v40840g	5	17	-	-	PUNCT
mw22v40840g	5	18	dot	dot	NOUN
mw22v40840g	5	19	cells	cell	NOUN
mw22v40840g	5	20	and	and	CCONJ
mw22v40840g	5	21	by	by	ADP
mw22v40840g	5	22	using	use	VERB
mw22v40840g	5	23	the	the	DET
mw22v40840g	5	24	coulomb	coulomb	NOUN
mw22v40840g	5	25	interaction	interaction	NOUN
mw22v40840g	5	26	to	to	ADP
mw22v40840g	5	27	couple	couple	VERB
mw22v40840g	5	28	neighboring	neighboring	NOUN
mw22v40840g	5	29	cells	cell	NOUN
mw22v40840g	5	30	.	.	PUNCT
mw22v40840g	6	1	qca	qca	PROPN
mw22v40840g	6	2	functionality	functionality	NOUN
mw22v40840g	6	3	has	have	AUX
mw22v40840g	6	4	been	be	AUX
mw22v40840g	6	5	demonstrated	demonstrate	VERB
mw22v40840g	6	6	in	in	ADP
mw22v40840g	6	7	metal	metal	NOUN
mw22v40840g	6	8	-	-	PUNCT
mw22v40840g	6	9	dot	dot	NOUN
mw22v40840g	6	10	systems	system	NOUN
mw22v40840g	6	11	at	at	ADP
mw22v40840g	6	12	cryogenic	cryogenic	ADJ
mw22v40840g	6	13	temperatures	temperature	NOUN
mw22v40840g	6	14	[	[	PUNCT
mw22v40840g	6	15	2	2	NUM
mw22v40840g	6	16	]	]	PUNCT
mw22v40840g	6	17	,	,	PUNCT
mw22v40840g	6	18	but	but	CCONJ
mw22v40840g	6	19	a	a	DET
mw22v40840g	6	20	molecular	molecular	ADJ
mw22v40840g	6	21	sized	sized	ADJ
mw22v40840g	6	22	qca	qca	PROPN
mw22v40840g	6	23	cell	cell	NOUN
mw22v40840g	6	24	would	would	AUX
mw22v40840g	6	25	operate	operate	VERB
mw22v40840g	6	26	at	at	ADP
mw22v40840g	6	27	room	room	NOUN
mw22v40840g	6	28	temperature	temperature	NOUN
mw22v40840g	6	29	.	.	PUNCT
mw22v40840g	7	1	the	the	DET
mw22v40840g	7	2	two	two	NUM
mw22v40840g	7	3	principle	principle	ADJ
mw22v40840g	7	4	requirements	requirement	NOUN
mw22v40840g	7	5	for	for	ADP
mw22v40840g	7	6	molecules	molecule	NOUN
mw22v40840g	7	7	used	use	VERB
mw22v40840g	7	8	in	in	ADP
mw22v40840g	7	9	a	a	DET
mw22v40840g	7	10	qca	qca	PROPN
mw22v40840g	7	11	cell	cell	NOUN
mw22v40840g	7	12	are	be	AUX
mw22v40840g	7	13	bistability	bistability	NOUN
mw22v40840g	7	14	and	and	CCONJ
mw22v40840g	7	15	ability	ability	NOUN
mw22v40840g	7	16	to	to	PART
mw22v40840g	7	17	couple	couple	VERB
mw22v40840g	7	18	to	to	ADP
mw22v40840g	7	19	neighboring	neighboring	NOUN
mw22v40840g	7	20	cells	cell	NOUN
mw22v40840g	8	1	[	[	X
mw22v40840g	8	2	3	3	NUM
mw22v40840g	8	3	]	]	PUNCT
mw22v40840g	8	4	.	.	PUNCT
mw22v40840g	9	1	electric	electric	ADJ
mw22v40840g	9	2	field	field	NOUN
mw22v40840g	9	3	-	-	PUNCT
mw22v40840g	9	4	driven	drive	VERB
mw22v40840g	9	5	bistability	bistability	NOUN
mw22v40840g	9	6	has	have	AUX
mw22v40840g	9	7	been	be	AUX
mw22v40840g	9	8	demonstrated	demonstrate	VERB
mw22v40840g	9	9	using	use	VERB
mw22v40840g	9	10	a	a	DET
mw22v40840g	9	11	capacitive	capacitive	ADJ
mw22v40840g	9	12	measurement	measurement	NOUN
mw22v40840g	9	13	of	of	ADP
mw22v40840g	9	14	a	a	DET
mw22v40840g	9	15	large	large	ADJ
mw22v40840g	9	16	number	number	NOUN
mw22v40840g	9	17	of	of	ADP
mw22v40840g	9	18	silicon	silicon	NOUN
mw22v40840g	9	19	surface	surface	NOUN
mw22v40840g	9	20	bound	bind	VERB
mw22v40840g	9	21	,	,	PUNCT
mw22v40840g	9	22	vertically	vertically	ADV
mw22v40840g	9	23	oriented	orient	VERB
mw22v40840g	9	24	molecules	molecule	NOUN
mw22v40840g	9	25	over	over	ADP
mw22v40840g	9	26	a	a	DET
mw22v40840g	9	27	large	large	ADJ
mw22v40840g	9	28	area	area	NOUN
mw22v40840g	9	29	using	use	VERB
mw22v40840g	9	30	a	a	DET
mw22v40840g	9	31	dinuclear	dinuclear	NOUN
mw22v40840g	9	32	complex	complex	NOUN
mw22v40840g	9	33	[	[	PUNCT
mw22v40840g	9	34	4	4	NUM
mw22v40840g	9	35	]	]	PUNCT
mw22v40840g	9	36	.	.	PUNCT
mw22v40840g	10	1	these	these	DET
mw22v40840g	10	2	molecules	molecule	NOUN
mw22v40840g	10	3	can	can	AUX
mw22v40840g	10	4	be	be	AUX
mw22v40840g	10	5	bound	bind	VERB
mw22v40840g	10	6	to	to	ADP
mw22v40840g	10	7	the	the	DET
mw22v40840g	10	8	surface	surface	NOUN
mw22v40840g	10	9	of	of	ADP
mw22v40840g	10	10	a	a	DET
mw22v40840g	10	11	chlorinated	chlorinate	VERB
mw22v40840g	10	12	,	,	PUNCT
mw22v40840g	10	13	<	<	X
mw22v40840g	10	14	111	111	NUM
mw22v40840g	10	15	>	>	X
mw22v40840g	10	16	oriented	orient	VERB
mw22v40840g	10	17	,	,	PUNCT
mw22v40840g	10	18	highly	highly	ADV
mw22v40840g	10	19	-	-	PUNCT
mw22v40840g	10	20	doped	dope	VERB
mw22v40840g	10	21	p	p	NOUN
mw22v40840g	10	22	-	-	PUNCT
mw22v40840g	10	23	type	type	NOUN
mw22v40840g	10	24	silicon	silicon	NOUN
mw22v40840g	10	25	substrate	substrate	NOUN
mw22v40840g	10	26	and	and	CCONJ
mw22v40840g	10	27	oxidized	oxidize	VERB
mw22v40840g	10	28	to	to	PART
mw22v40840g	10	29	become	become	VERB
mw22v40840g	10	30	stable	stable	ADJ
mw22v40840g	10	31	,	,	PUNCT
mw22v40840g	10	32	biased	biased	ADJ
mw22v40840g	10	33	mixed	mixed	ADJ
mw22v40840g	10	34	-	-	PUNCT
mw22v40840g	10	35	valence	valence	NOUN
mw22v40840g	10	36	complexes	complex	NOUN
mw22v40840g	10	37	.	.	PUNCT
mw22v40840g	11	1	we	we	PRON
mw22v40840g	11	2	present	present	VERB
mw22v40840g	11	3	a	a	DET
mw22v40840g	11	4	system	system	NOUN
mw22v40840g	11	5	to	to	PART
mw22v40840g	11	6	test	test	VERB
mw22v40840g	11	7	the	the	DET
mw22v40840g	11	8	bistability	bistability	NOUN
mw22v40840g	11	9	of	of	ADP
mw22v40840g	11	10	individual	individual	ADJ
mw22v40840g	11	11	molecules	molecule	NOUN
mw22v40840g	11	12	for	for	ADP
mw22v40840g	11	13	application	application	NOUN
mw22v40840g	11	14	in	in	ADP
mw22v40840g	11	15	a	a	DET
mw22v40840g	11	16	qca	qca	PROPN
mw22v40840g	11	17	cell	cell	NOUN
mw22v40840g	11	18	.	.	PUNCT
mw22v40840g	12	1	the	the	DET
mw22v40840g	12	2	system	system	NOUN
mw22v40840g	12	3	presented	present	VERB
mw22v40840g	12	4	consists	consist	NOUN
mw22v40840g	12	5	of	of	ADP
mw22v40840g	12	6	two	two	NUM
mw22v40840g	12	7	polysilicon	polysilicon	NOUN
mw22v40840g	12	8	gate	gate	NOUN
mw22v40840g	12	9	electrodes	electrode	NOUN
mw22v40840g	12	10	which	which	PRON
mw22v40840g	12	11	sit	sit	VERB
mw22v40840g	12	12	adjacent	adjacent	ADJ
mw22v40840g	12	13	to	to	ADP
mw22v40840g	12	14	two	two	NUM
mw22v40840g	12	15	highly	highly	ADV
mw22v40840g	12	16	-	-	PUNCT
mw22v40840g	12	17	doped	dope	VERB
mw22v40840g	12	18	windows	window	NOUN
mw22v40840g	12	19	of	of	ADP
mw22v40840g	12	20	silicon	silicon	NOUN
mw22v40840g	12	21	to	to	PART
mw22v40840g	12	22	which	which	PRON
mw22v40840g	12	23	the	the	DET
mw22v40840g	12	24	molecules	molecule	NOUN
mw22v40840g	12	25	can	can	AUX
mw22v40840g	12	26	be	be	AUX
mw22v40840g	12	27	bound	bind	VERB
mw22v40840g	12	28	.	.	PUNCT
mw22v40840g	13	1	to	to	PART
mw22v40840g	13	2	enable	enable	VERB
mw22v40840g	13	3	the	the	DET
mw22v40840g	13	4	detection	detection	NOUN
mw22v40840g	13	5	of	of	ADP
mw22v40840g	13	6	switching	switch	VERB
mw22v40840g	13	7	activity	activity	NOUN
mw22v40840g	13	8	the	the	DET
mw22v40840g	13	9	two	two	NUM
mw22v40840g	13	10	highly	highly	ADV
mw22v40840g	13	11	doped	dope	VERB
mw22v40840g	13	12	regions	region	NOUN
mw22v40840g	13	13	are	be	AUX
mw22v40840g	13	14	electrically	electrically	ADV
mw22v40840g	13	15	connected	connect	VERB
mw22v40840g	13	16	to	to	ADP
mw22v40840g	13	17	the	the	DET
mw22v40840g	13	18	island	island	NOUN
mw22v40840g	13	19	of	of	ADP
mw22v40840g	13	20	a	a	DET
mw22v40840g	13	21	single	single	ADJ
mw22v40840g	13	22	-	-	PUNCT
mw22v40840g	13	23	electron	electron	NOUN
mw22v40840g	13	24	transistor	transistor	NOUN
mw22v40840g	13	25	(	(	PUNCT
mw22v40840g	13	26	set	set	NOUN
mw22v40840g	13	27	)	)	PUNCT
mw22v40840g	13	28	which	which	PRON
mw22v40840g	13	29	serves	serve	VERB
mw22v40840g	13	30	as	as	ADP
mw22v40840g	13	31	an	an	DET
mw22v40840g	13	32	electrometer	electrometer	NOUN
mw22v40840g	13	33	.	.	PUNCT
mw22v40840g	14	1	the	the	DET
mw22v40840g	14	2	molecules	molecule	NOUN
mw22v40840g	14	3	,	,	PUNCT
mw22v40840g	14	4	bound	bind	VERB
mw22v40840g	14	5	to	to	ADP
mw22v40840g	14	6	one	one	NUM
mw22v40840g	14	7	of	of	ADP
mw22v40840g	14	8	the	the	DET
mw22v40840g	14	9	two	two	NUM
mw22v40840g	14	10	windows	window	NOUN
mw22v40840g	14	11	,	,	PUNCT
mw22v40840g	14	12	are	be	AUX
mw22v40840g	14	13	capacitively	capacitively	ADV
mw22v40840g	14	14	coupled	couple	VERB
mw22v40840g	14	15	to	to	ADP
mw22v40840g	14	16	the	the	DET
mw22v40840g	14	17	island	island	NOUN
mw22v40840g	14	18	of	of	ADP
mw22v40840g	14	19	the	the	DET
mw22v40840g	14	20	set	set	NOUN
mw22v40840g	14	21	.	.	PUNCT
mw22v40840g	15	1	this	this	DET
mw22v40840g	15	2	design	design	NOUN
mw22v40840g	15	3	facilitates	facilitate	VERB
mw22v40840g	15	4	a	a	DET
mw22v40840g	15	5	differential	differential	ADJ
mw22v40840g	15	6	measurement	measurement	NOUN
mw22v40840g	15	7	approach	approach	NOUN
mw22v40840g	15	8	where	where	SCONJ
mw22v40840g	15	9	a	a	DET
mw22v40840g	15	10	single	single	ADJ
mw22v40840g	15	11	molecular	molecular	ADJ
mw22v40840g	15	12	switching	switching	NOUN
mw22v40840g	15	13	event	event	NOUN
mw22v40840g	15	14	should	should	AUX
mw22v40840g	15	15	be	be	AUX
mw22v40840g	15	16	seen	see	VERB
mw22v40840g	15	17	in	in	ADP
mw22v40840g	15	18	the	the	DET
mw22v40840g	15	19	conductance	conductance	NOUN
mw22v40840g	15	20	of	of	ADP
mw22v40840g	15	21	the	the	DET
mw22v40840g	15	22	set	set	NOUN
mw22v40840g	15	23	.	.	PUNCT
mw22v40840g	16	1	the	the	DET
mw22v40840g	16	2	system	system	NOUN
mw22v40840g	16	3	to	to	PART
mw22v40840g	16	4	effect	effect	VERB
mw22v40840g	16	5	this	this	DET
mw22v40840g	16	6	test	test	NOUN
mw22v40840g	16	7	,	,	PUNCT
mw22v40840g	16	8	broadly	broadly	ADV
mw22v40840g	16	9	serving	serve	VERB
mw22v40840g	16	10	the	the	DET
mw22v40840g	16	11	role	role	NOUN
mw22v40840g	16	12	of	of	ADP
mw22v40840g	16	13	electrometer	electrometer	NOUN
mw22v40840g	16	14	,	,	PUNCT
mw22v40840g	16	15	is	be	AUX
mw22v40840g	16	16	presented	present	VERB
mw22v40840g	16	17	herein	herein	ADV
mw22v40840g	16	18	.	.	PUNCT