id	sid	tid	token	lemma	pos
mk61rf58771	1	1	of	of	ADP
mk61rf58771	1	2	the	the	DET
mk61rf58771	1	3	iii	iii	ADJ
mk61rf58771	1	4	-	-	PUNCT
mk61rf58771	1	5	nitride	nitride	NOUN
mk61rf58771	1	6	family	family	NOUN
mk61rf58771	1	7	the	the	DET
mk61rf58771	1	8	aln	aln	PROPN
mk61rf58771	1	9	/	/	SYM
mk61rf58771	1	10	gan	gan	PROPN
mk61rf58771	1	11	heterojunction	heterojunction	NOUN
mk61rf58771	1	12	has	have	AUX
mk61rf58771	1	13	demonstrated	demonstrate	VERB
mk61rf58771	1	14	the	the	DET
mk61rf58771	1	15	largest	large	ADJ
mk61rf58771	1	16	combined	combine	VERB
mk61rf58771	1	17	polarization	polarization	NOUN
mk61rf58771	1	18	charge	charge	NOUN
mk61rf58771	1	19	and	and	CCONJ
mk61rf58771	1	20	energy	energy	NOUN
mk61rf58771	1	21	band	band	NOUN
mk61rf58771	1	22	osets	oset	NOUN
mk61rf58771	1	23	available	available	ADJ
mk61rf58771	1	24	in	in	ADP
mk61rf58771	1	25	the	the	DET
mk61rf58771	1	26	system	system	NOUN
mk61rf58771	1	27	.	.	PUNCT
mk61rf58771	2	1	engineering	engineer	VERB
mk61rf58771	2	2	the	the	DET
mk61rf58771	2	3	polarization	polarization	NOUN
mk61rf58771	2	4	fields	field	VERB
mk61rf58771	2	5	through	through	ADP
mk61rf58771	2	6	varying	vary	VERB
mk61rf58771	2	7	the	the	DET
mk61rf58771	2	8	aln	aln	ADJ
mk61rf58771	2	9	thickness	thickness	NOUN
mk61rf58771	2	10	leads	lead	VERB
mk61rf58771	2	11	to	to	ADP
mk61rf58771	2	12	two	two	NUM
mk61rf58771	2	13	-	-	PUNCT
mk61rf58771	2	14	dimensional	dimensional	ADJ
mk61rf58771	2	15	electron	electron	NOUN
mk61rf58771	2	16	gas	gas	NOUN
mk61rf58771	2	17	densities	density	NOUN
mk61rf58771	2	18	(	(	PUNCT
mk61rf58771	2	19	2degs	2degs	NUM
mk61rf58771	2	20	)	)	PUNCT
mk61rf58771	2	21	that	that	PRON
mk61rf58771	2	22	may	may	AUX
mk61rf58771	2	23	be	be	AUX
mk61rf58771	2	24	tailored	tailor	VERB
mk61rf58771	2	25	between	between	ADP
mk61rf58771	2	26	0.5	0.5	NUM
mk61rf58771	2	27	5	5	NUM
mk61rf58771	2	28	x	x	SYM
mk61rf58771	2	29	1013	1013	NUM
mk61rf58771	2	30	cm2	cm2	PROPN
mk61rf58771	2	31	.	.	NOUN
mk61rf58771	3	1	furthermore	furthermore	ADV
mk61rf58771	3	2	,	,	PUNCT
mk61rf58771	3	3	the	the	DET
mk61rf58771	3	4	ultra	ultra	ADJ
mk61rf58771	3	5	-	-	ADJ
mk61rf58771	3	6	thin	thin	ADJ
mk61rf58771	3	7	(	(	PUNCT
mk61rf58771	3	8	<	<	X
mk61rf58771	3	9	5	5	NUM
mk61rf58771	3	10	nm	nm	NOUN
mk61rf58771	3	11	)	)	PUNCT
mk61rf58771	3	12	barrier	barrier	NOUN
mk61rf58771	3	13	and	and	CCONJ
mk61rf58771	3	14	excellent	excellent	ADJ
mk61rf58771	3	15	transport	transport	NOUN
mk61rf58771	3	16	properties	property	NOUN
mk61rf58771	3	17	of	of	ADP
mk61rf58771	3	18	this	this	PRON
mk61rf58771	3	19	all	all	DET
mk61rf58771	3	20	binary	binary	ADJ
mk61rf58771	3	21	heterostructure	heterostructure	NOUN
mk61rf58771	3	22	make	make	VERB
mk61rf58771	3	23	it	it	PRON
mk61rf58771	3	24	well	well	ADV
mk61rf58771	3	25	suited	suit	VERB
mk61rf58771	3	26	for	for	ADP
mk61rf58771	3	27	high	high	ADJ
mk61rf58771	3	28	electron	electron	NOUN
mk61rf58771	3	29	mobility	mobility	NOUN
mk61rf58771	3	30	transistor	transistor	NOUN
mk61rf58771	3	31	applications	application	NOUN
mk61rf58771	3	32	where	where	SCONJ
mk61rf58771	3	33	high	high	ADJ
mk61rf58771	3	34	frequency	frequency	NOUN
mk61rf58771	3	35	and	and	CCONJ
mk61rf58771	3	36	high	high	ADJ
mk61rf58771	3	37	currentare	currentare	NOUN
mk61rf58771	3	38	required	require	VERB
mk61rf58771	3	39	.	.	PUNCT
mk61rf58771	4	1	this	this	DET
mk61rf58771	4	2	work	work	NOUN
mk61rf58771	4	3	encompasses	encompass	VERB
mk61rf58771	4	4	various	various	ADJ
mk61rf58771	4	5	design	design	NOUN
mk61rf58771	4	6	aspects	aspect	NOUN
mk61rf58771	4	7	of	of	ADP
mk61rf58771	4	8	gan	gan	PROPN
mk61rf58771	4	9	-	-	PUNCT
mk61rf58771	4	10	based	base	VERB
mk61rf58771	4	11	high	high	ADJ
mk61rf58771	4	12	electron	electron	NOUN
mk61rf58771	4	13	mobility	mobility	NOUN
mk61rf58771	4	14	transistors	transistor	NOUN
mk61rf58771	4	15	(	(	PUNCT
mk61rf58771	4	16	hemts	hemts	PROPN
mk61rf58771	4	17	)	)	PUNCT
mk61rf58771	4	18	which	which	PRON
mk61rf58771	4	19	ultimately	ultimately	ADV
mk61rf58771	4	20	result	result	VERB
mk61rf58771	4	21	in	in	ADP
mk61rf58771	4	22	the	the	DET
mk61rf58771	4	23	realization	realization	NOUN
mk61rf58771	4	24	of	of	ADP
mk61rf58771	4	25	several	several	ADJ
mk61rf58771	4	26	generations	generation	NOUN
mk61rf58771	4	27	that	that	PRON
mk61rf58771	4	28	utilize	utilize	VERB
mk61rf58771	4	29	the	the	DET
mk61rf58771	4	30	aln	aln	PROPN
mk61rf58771	4	31	/	/	SYM
mk61rf58771	4	32	gan	gan	PROPN
mk61rf58771	4	33	heterostructure.hemts	heterostructure.hemts	PROPN
mk61rf58771	4	34	fabricated	fabricate	VERB
mk61rf58771	4	35	from	from	ADP
mk61rf58771	4	36	high	high	ADJ
mk61rf58771	4	37	-	-	PUNCT
mk61rf58771	4	38	mobility	mobility	NOUN
mk61rf58771	4	39	,	,	PUNCT
mk61rf58771	4	40	low	low	ADJ
mk61rf58771	4	41	sheet	sheet	NOUN
mk61rf58771	4	42	resistance	resistance	NOUN
mk61rf58771	4	43	heterostructures	heterostructure	NOUN
mk61rf58771	4	44	have	have	AUX
mk61rf58771	4	45	achieved	achieve	VERB
mk61rf58771	4	46	drain	drain	VERB
mk61rf58771	4	47	current	current	ADJ
mk61rf58771	4	48	densities	density	NOUN
mk61rf58771	4	49	up	up	ADP
mk61rf58771	4	50	to	to	ADP
mk61rf58771	4	51	2.3	2.3	NUM
mk61rf58771	4	52	a	a	DET
mk61rf58771	4	53	/	/	SYM
mk61rf58771	4	54	mm	mm	NOUN
mk61rf58771	4	55	and	and	CCONJ
mk61rf58771	4	56	transconductance	transconductance	NOUN
mk61rf58771	4	57	of	of	ADP
mk61rf58771	4	58	480	480	NUM
mk61rf58771	4	59	ms	ms	PROPN
mk61rf58771	4	60	/	/	SYM
mk61rf58771	4	61	mm	mm	PROPN
mk61rf58771	4	62	,	,	PUNCT
mk61rf58771	4	63	which	which	PRON
mk61rf58771	4	64	set	set	VERB
mk61rf58771	4	65	new	new	ADJ
mk61rf58771	4	66	benchmarks	benchmark	NOUN
mk61rf58771	4	67	for	for	ADP
mk61rf58771	4	68	gan	gan	PROPN
mk61rf58771	4	69	-	-	PUNCT
mk61rf58771	4	70	based	base	VERB
mk61rf58771	4	71	hemts	hemts	PROPN
mk61rf58771	4	72	.	.	PUNCT
mk61rf58771	5	1	ultra	ultra	ADJ
mk61rf58771	5	2	-	-	ADJ
mk61rf58771	5	3	thin	thin	ADJ
mk61rf58771	5	4	pre	pre	ADJ
mk61rf58771	5	5	-	-	ADJ
mk61rf58771	5	6	metallization	metallization	ADJ
mk61rf58771	5	7	etching	etching	NOUN
mk61rf58771	5	8	has	have	AUX
mk61rf58771	5	9	been	be	AUX
mk61rf58771	5	10	employed	employ	VERB
mk61rf58771	5	11	for	for	ADP
mk61rf58771	5	12	the	the	DET
mk61rf58771	5	13	rst	rst	PROPN
mk61rf58771	5	14	time	time	NOUN
mk61rf58771	5	15	to	to	PART
mk61rf58771	5	16	reduce	reduce	VERB
mk61rf58771	5	17	ohmic	ohmic	ADJ
mk61rf58771	5	18	contact	contact	NOUN
mk61rf58771	5	19	resistance	resistance	NOUN
mk61rf58771	5	20	for	for	ADP
mk61rf58771	5	21	aln	aln	PROPN
mk61rf58771	5	22	/	/	SYM
mk61rf58771	5	23	gan	gan	PROPN
mk61rf58771	5	24	hemts	hemts	PROPN
mk61rf58771	5	25	and	and	CCONJ
mk61rf58771	5	26	has	have	AUX
mk61rf58771	5	27	enabled	enable	VERB
mk61rf58771	5	28	small	small	ADJ
mk61rf58771	5	29	signal	signal	NOUN
mk61rf58771	5	30	frequency	frequency	NOUN
mk61rf58771	5	31	performance	performance	NOUN
mk61rf58771	5	32	in	in	ADP
mk61rf58771	5	33	excess	excess	NOUN
mk61rf58771	5	34	of	of	ADP
mk61rf58771	5	35	100	100	NUM
mk61rf58771	5	36	ghz	ghz	NOUN
mk61rf58771	5	37	.	.	PUNCT
mk61rf58771	6	1	moll	moll	PROPN
mk61rf58771	6	2	's	's	PART
mk61rf58771	6	3	method	method	NOUN
mk61rf58771	6	4	for	for	ADP
mk61rf58771	6	5	delay	delay	NOUN
mk61rf58771	6	6	time	time	NOUN
mk61rf58771	6	7	extraction	extraction	NOUN
mk61rf58771	6	8	has	have	AUX
mk61rf58771	6	9	been	be	AUX
mk61rf58771	6	10	utilized	utilize	VERB
mk61rf58771	6	11	to	to	PART
mk61rf58771	6	12	extract	extract	VERB
mk61rf58771	6	13	an	an	DET
mk61rf58771	6	14	effective	effective	ADJ
mk61rf58771	6	15	electron	electron	NOUN
mk61rf58771	6	16	velocity	velocity	NOUN
mk61rf58771	6	17	in	in	ADP
mk61rf58771	6	18	the	the	DET
mk61rf58771	6	19	intrinsic	intrinsic	ADJ
mk61rf58771	6	20	region	region	NOUN
mk61rf58771	6	21	of	of	ADP
mk61rf58771	6	22	the	the	DET
mk61rf58771	6	23	aln	aln	PROPN
mk61rf58771	6	24	/	/	SYM
mk61rf58771	6	25	gan	gan	PROPN
mk61rf58771	6	26	hemt	hemt	PROPN
mk61rf58771	6	27	and	and	CCONJ
mk61rf58771	6	28	was	be	AUX
mk61rf58771	6	29	found	find	VERB
mk61rf58771	6	30	to	to	PART
mk61rf58771	6	31	be	be	AUX
mk61rf58771	6	32	~	~	PUNCT
mk61rf58771	6	33	1.2	1.2	NUM
mk61rf58771	6	34	x	x	SYM
mk61rf58771	6	35	107	107	NUM
mk61rf58771	6	36	cm	cm	PROPN
mk61rf58771	6	37	/	/	SYM
mk61rf58771	6	38	s.by	s.by	PROPN
mk61rf58771	6	39	leveraging	leverage	VERB
mk61rf58771	6	40	the	the	DET
mk61rf58771	6	41	allowable	allowable	ADJ
mk61rf58771	6	42	thickness	thickness	NOUN
mk61rf58771	6	43	window	window	NOUN
mk61rf58771	6	44	of	of	ADP
mk61rf58771	6	45	the	the	DET
mk61rf58771	6	46	aln	aln	PROPN
mk61rf58771	6	47	barrier	barrier	NOUN
mk61rf58771	6	48	along	along	ADP
mk61rf58771	6	49	with	with	ADP
mk61rf58771	6	50	the	the	DET
mk61rf58771	6	51	high	high	ADJ
mk61rf58771	6	52	density	density	NOUN
mk61rf58771	6	53	2degs	2degs	NUM
mk61rf58771	6	54	that	that	PRON
mk61rf58771	6	55	result	result	VERB
mk61rf58771	6	56	,	,	PUNCT
mk61rf58771	6	57	several	several	ADJ
mk61rf58771	6	58	novel	novel	NOUN
mk61rf58771	6	59	hemt	hemt	PROPN
mk61rf58771	6	60	devices	device	NOUN
mk61rf58771	6	61	have	have	AUX
mk61rf58771	6	62	been	be	AUX
mk61rf58771	6	63	designed	design	VERB
mk61rf58771	6	64	and	and	CCONJ
mk61rf58771	6	65	realized	realize	VERB
mk61rf58771	6	66	.	.	PUNCT
mk61rf58771	7	1	high	high	PROPN
mk61rf58771	7	2	al	al	PROPN
mk61rf58771	7	3	-	-	PUNCT
mk61rf58771	7	4	content	content	ADJ
mk61rf58771	7	5	alxga1	alxga1	NOUN
mk61rf58771	7	6	-	-	PUNCT
mk61rf58771	7	7	xn	xn	PROPN
mk61rf58771	7	8	back	back	NOUN
mk61rf58771	7	9	barriers	barrier	NOUN
mk61rf58771	7	10	have	have	AUX
mk61rf58771	7	11	been	be	AUX
mk61rf58771	7	12	employed	employ	VERB
mk61rf58771	7	13	for	for	ADP
mk61rf58771	7	14	improved	improve	VERB
mk61rf58771	7	15	2deg	2deg	NUM
mk61rf58771	7	16	confinement	confinement	NOUN
mk61rf58771	7	17	in	in	ADP
mk61rf58771	7	18	several	several	ADJ
mk61rf58771	7	19	new	new	ADJ
mk61rf58771	7	20	variations	variation	NOUN
mk61rf58771	7	21	of	of	ADP
mk61rf58771	7	22	the	the	DET
mk61rf58771	7	23	ultra	ultra	ADJ
mk61rf58771	7	24	-	-	ADJ
mk61rf58771	7	25	thin	thin	ADJ
mk61rf58771	7	26	aln	aln	PROPN
mk61rf58771	7	27	/	/	SYM
mk61rf58771	7	28	gan	gan	PROPN
mk61rf58771	7	29	hemt	hemt	PROPN
mk61rf58771	7	30	.	.	PUNCT
mk61rf58771	8	1	a	a	DET
mk61rf58771	8	2	dual	dual	ADJ
mk61rf58771	8	3	,	,	PUNCT
mk61rf58771	8	4	parallel	parallel	NOUN
mk61rf58771	8	5	-	-	PUNCT
mk61rf58771	8	6	channel	channel	NOUN
mk61rf58771	8	7	aln	aln	PROPN
mk61rf58771	8	8	/	/	SYM
mk61rf58771	8	9	gan	gan	PROPN
mk61rf58771	8	10	-	-	PUNCT
mk61rf58771	8	11	based	base	VERB
mk61rf58771	8	12	hemt	hemt	PROPN
mk61rf58771	8	13	structure	structure	NOUN
mk61rf58771	8	14	is	be	AUX
mk61rf58771	8	15	designed	design	VERB
mk61rf58771	8	16	and	and	CCONJ
mk61rf58771	8	17	realized	realize	VERB
mk61rf58771	8	18	for	for	ADP
mk61rf58771	8	19	the	the	DET
mk61rf58771	8	20	first	first	ADJ
mk61rf58771	8	21	time	time	NOUN
mk61rf58771	8	22	as	as	ADP
mk61rf58771	8	23	an	an	DET
mk61rf58771	8	24	epitaxial	epitaxial	ADJ
mk61rf58771	8	25	approach	approach	NOUN
mk61rf58771	8	26	to	to	ADP
mk61rf58771	8	27	mitigating	mitigate	VERB
mk61rf58771	8	28	dc	dc	PROPN
mk61rf58771	8	29	-	-	PUNCT
mk61rf58771	8	30	rf	rf	ADJ
mk61rf58771	8	31	frequency	frequency	NOUN
mk61rf58771	8	32	dispersion	dispersion	NOUN
mk61rf58771	8	33	.	.	PUNCT
mk61rf58771	9	1	these	these	DET
mk61rf58771	9	2	structures	structure	NOUN
mk61rf58771	9	3	emphasize	emphasize	VERB
mk61rf58771	9	4	the	the	DET
mk61rf58771	9	5	facilitation	facilitation	NOUN
mk61rf58771	9	6	of	of	ADP
mk61rf58771	9	7	new	new	ADJ
mk61rf58771	9	8	device	device	NOUN
mk61rf58771	9	9	designs	design	NOUN
mk61rf58771	9	10	that	that	PRON
mk61rf58771	9	11	are	be	AUX
mk61rf58771	9	12	made	make	VERB
mk61rf58771	9	13	possible	possible	ADJ
mk61rf58771	9	14	through	through	ADP
mk61rf58771	9	15	the	the	DET
mk61rf58771	9	16	particular	particular	ADJ
mk61rf58771	9	17	qualities	quality	NOUN
mk61rf58771	9	18	the	the	DET
mk61rf58771	9	19	aln	aln	PROPN
mk61rf58771	9	20	/	/	SYM
mk61rf58771	9	21	gan	gan	PROPN
mk61rf58771	9	22	heterostructure	heterostructure	PROPN
mk61rf58771	9	23	possesses	possess	VERB
mk61rf58771	9	24	.	.	PUNCT