id	sid	tid	token	lemma	pos
mk61rf5876p	1	1	in	in	ADP
mk61rf5876p	1	2	order	order	NOUN
mk61rf5876p	1	3	to	to	PART
mk61rf5876p	1	4	fill	fill	VERB
mk61rf5876p	1	5	the	the	DET
mk61rf5876p	1	6	need	need	NOUN
mk61rf5876p	1	7	for	for	ADP
mk61rf5876p	1	8	more	more	ADV
mk61rf5876p	1	9	densely	densely	ADV
mk61rf5876p	1	10	packed	packed	ADJ
mk61rf5876p	1	11	photonic	photonic	ADJ
mk61rf5876p	1	12	integrated	integrate	VERB
mk61rf5876p	1	13	circuits	circuit	NOUN
mk61rf5876p	1	14	(	(	PUNCT
mk61rf5876p	1	15	pics	pic	NOUN
mk61rf5876p	1	16	)	)	PUNCT
mk61rf5876p	1	17	the	the	DET
mk61rf5876p	1	18	higher	high	ADJ
mk61rf5876p	1	19	optical	optical	ADJ
mk61rf5876p	1	20	confinement	confinement	NOUN
mk61rf5876p	1	21	provided	provide	VERB
mk61rf5876p	1	22	by	by	ADP
mk61rf5876p	1	23	high	high	ADJ
mk61rf5876p	1	24	-	-	PUNCT
mk61rf5876p	1	25	index	index	NOUN
mk61rf5876p	1	26	-	-	PUNCT
mk61rf5876p	1	27	contrast	contrast	NOUN
mk61rf5876p	1	28	(	(	PUNCT
mk61rf5876p	1	29	hic	hic	PROPN
mk61rf5876p	1	30	)	)	PUNCT
mk61rf5876p	1	31	ridge	ridge	PROPN
mk61rf5876p	1	32	waveguide	waveguide	NOUN
mk61rf5876p	1	33	(	(	PUNCT
mk61rf5876p	1	34	rwg	rwg	PROPN
mk61rf5876p	1	35	)	)	PUNCT
mk61rf5876p	1	36	structures	structure	NOUN
mk61rf5876p	1	37	is	be	AUX
mk61rf5876p	1	38	required	require	VERB
mk61rf5876p	1	39	.	.	PUNCT
mk61rf5876p	2	1	in	in	ADP
mk61rf5876p	2	2	order	order	NOUN
mk61rf5876p	2	3	to	to	PART
mk61rf5876p	2	4	realize	realize	VERB
mk61rf5876p	2	5	the	the	DET
mk61rf5876p	2	6	high	high	ADJ
mk61rf5876p	2	7	index	index	NOUN
mk61rf5876p	2	8	contrast	contrast	NOUN
mk61rf5876p	2	9	(	(	PUNCT
mk61rf5876p	2	10	&	&	CCONJ
mk61rf5876p	2	11	#	#	SYM
mk61rf5876p	2	12	916;n	916;n	NUM
mk61rf5876p	2	13	)	)	PUNCT
mk61rf5876p	2	14	between	between	ADP
mk61rf5876p	2	15	the	the	DET
mk61rf5876p	2	16	semiconductor	semiconductor	NOUN
mk61rf5876p	2	17	waveguide	waveguide	NOUN
mk61rf5876p	2	18	core	core	NOUN
mk61rf5876p	2	19	and	and	CCONJ
mk61rf5876p	2	20	the	the	DET
mk61rf5876p	2	21	dielectric	dielectric	ADJ
mk61rf5876p	2	22	cladding	cladding	NOUN
mk61rf5876p	2	23	,	,	PUNCT
mk61rf5876p	2	24	an	an	DET
mk61rf5876p	2	25	oxygen	oxygen	NOUN
mk61rf5876p	2	26	-	-	PUNCT
mk61rf5876p	2	27	enhanced	enhance	VERB
mk61rf5876p	2	28	non	non	ADJ
mk61rf5876p	2	29	-	-	ADJ
mk61rf5876p	2	30	selective	selective	ADJ
mk61rf5876p	2	31	wet	wet	ADJ
mk61rf5876p	2	32	thermal	thermal	ADJ
mk61rf5876p	2	33	oxidation	oxidation	NOUN
mk61rf5876p	2	34	(	(	PUNCT
mk61rf5876p	2	35	oenso	oenso	NOUN
mk61rf5876p	2	36	)	)	PUNCT
mk61rf5876p	2	37	process	process	NOUN
mk61rf5876p	2	38	developed	develop	VERB
mk61rf5876p	2	39	at	at	ADP
mk61rf5876p	2	40	the	the	DET
mk61rf5876p	2	41	university	university	PROPN
mk61rf5876p	2	42	of	of	ADP
mk61rf5876p	2	43	notre	notre	PROPN
mk61rf5876p	2	44	dame	dame	NOUN
mk61rf5876p	2	45	has	have	AUX
mk61rf5876p	2	46	been	be	AUX
mk61rf5876p	2	47	applied	apply	VERB
mk61rf5876p	2	48	to	to	ADP
mk61rf5876p	2	49	the	the	DET
mk61rf5876p	2	50	fabrication	fabrication	NOUN
mk61rf5876p	2	51	of	of	ADP
mk61rf5876p	2	52	gaas	gaas	NOUN
mk61rf5876p	2	53	and	and	CCONJ
mk61rf5876p	2	54	inp	inp	NOUN
mk61rf5876p	2	55	based	base	VERB
mk61rf5876p	2	56	hic	hic	PROPN
mk61rf5876p	2	57	rwgs	rwgs	PROPN
mk61rf5876p	2	58	.	.	PUNCT
mk61rf5876p	3	1	in	in	ADP
mk61rf5876p	3	2	this	this	DET
mk61rf5876p	3	3	work	work	NOUN
mk61rf5876p	3	4	,	,	PUNCT
mk61rf5876p	3	5	the	the	DET
mk61rf5876p	3	6	unique	unique	ADJ
mk61rf5876p	3	7	characteristics	characteristic	NOUN
mk61rf5876p	3	8	of	of	ADP
mk61rf5876p	3	9	hic	hic	PROPN
mk61rf5876p	3	10	rwgs	rwgs	NOUN
mk61rf5876p	3	11	as	as	ADV
mk61rf5876p	3	12	well	well	ADV
mk61rf5876p	3	13	as	as	ADP
mk61rf5876p	3	14	the	the	DET
mk61rf5876p	3	15	interface	interface	NOUN
mk61rf5876p	3	16	between	between	ADP
mk61rf5876p	3	17	the	the	DET
mk61rf5876p	3	18	semiconductor	semiconductor	NOUN
mk61rf5876p	3	19	and	and	CCONJ
mk61rf5876p	3	20	the	the	DET
mk61rf5876p	3	21	native	native	ADJ
mk61rf5876p	3	22	oxide	oxide	NOUN
mk61rf5876p	3	23	have	have	AUX
mk61rf5876p	3	24	been	be	AUX
mk61rf5876p	3	25	examined	examine	VERB
mk61rf5876p	3	26	.	.	PUNCT
mk61rf5876p	4	1	utilizing	utilize	VERB
mk61rf5876p	4	2	this	this	DET
mk61rf5876p	4	3	process	process	NOUN
mk61rf5876p	4	4	,	,	PUNCT
mk61rf5876p	4	5	passive	passive	ADJ
mk61rf5876p	4	6	single	single	ADJ
mk61rf5876p	4	7	mode	mode	NOUN
mk61rf5876p	4	8	hic	hic	PROPN
mk61rf5876p	4	9	rwg	rwg	PROPN
mk61rf5876p	4	10	devices	device	NOUN
mk61rf5876p	4	11	have	have	AUX
mk61rf5876p	4	12	been	be	AUX
mk61rf5876p	4	13	fabricated	fabricate	VERB
mk61rf5876p	4	14	which	which	PRON
mk61rf5876p	4	15	exhibit	exhibit	VERB
mk61rf5876p	4	16	record	record	NOUN
mk61rf5876p	4	17	low	low	ADJ
mk61rf5876p	4	18	propagation	propagation	NOUN
mk61rf5876p	4	19	losses	loss	NOUN
mk61rf5876p	4	20	.	.	PUNCT
mk61rf5876p	5	1	active	active	ADJ
mk61rf5876p	5	2	diode	diode	NOUN
mk61rf5876p	5	3	laser	laser	NOUN
mk61rf5876p	5	4	devices	device	NOUN
mk61rf5876p	5	5	are	be	AUX
mk61rf5876p	5	6	fabricated	fabricate	VERB
mk61rf5876p	5	7	with	with	ADP
mk61rf5876p	5	8	improved	improve	VERB
mk61rf5876p	5	9	performance	performance	NOUN
mk61rf5876p	5	10	over	over	ADP
mk61rf5876p	5	11	previous	previous	ADJ
mk61rf5876p	5	12	results	result	NOUN
mk61rf5876p	5	13	.	.	PUNCT
mk61rf5876p	6	1	for	for	ADP
mk61rf5876p	6	2	the	the	DET
mk61rf5876p	6	3	first	first	ADJ
mk61rf5876p	6	4	time	time	NOUN
mk61rf5876p	6	5	these	these	DET
mk61rf5876p	6	6	devices	device	NOUN
mk61rf5876p	6	7	have	have	AUX
mk61rf5876p	6	8	been	be	AUX
mk61rf5876p	6	9	modified	modify	VERB
mk61rf5876p	6	10	for	for	ADP
mk61rf5876p	6	11	junction	junction	NOUN
mk61rf5876p	6	12	side	side	VERB
mk61rf5876p	6	13	down	down	ADP
mk61rf5876p	6	14	bonding	bond	VERB
mk61rf5876p	6	15	to	to	ADP
mk61rf5876p	6	16	heatsinks	heatsink	NOUN
mk61rf5876p	6	17	and	and	CCONJ
mk61rf5876p	6	18	characterized	characterize	VERB
mk61rf5876p	6	19	under	under	ADP
mk61rf5876p	6	20	continuous	continuous	ADJ
mk61rf5876p	6	21	wave	wave	NOUN
mk61rf5876p	6	22	(	(	PUNCT
mk61rf5876p	6	23	cw	cw	PROPN
mk61rf5876p	6	24	)	)	PUNCT
mk61rf5876p	6	25	excitation	excitation	NOUN
mk61rf5876p	6	26	while	while	SCONJ
mk61rf5876p	6	27	mounted	mount	VERB
mk61rf5876p	6	28	to	to	ADP
mk61rf5876p	6	29	a	a	DET
mk61rf5876p	6	30	temperature	temperature	NOUN
mk61rf5876p	6	31	controlled	control	VERB
mk61rf5876p	6	32	stage	stage	NOUN
mk61rf5876p	6	33	.	.	PUNCT
mk61rf5876p	7	1	finally	finally	ADV
mk61rf5876p	7	2	,	,	PUNCT
mk61rf5876p	7	3	the	the	DET
mk61rf5876p	7	4	use	use	NOUN
mk61rf5876p	7	5	of	of	ADP
mk61rf5876p	7	6	the	the	DET
mk61rf5876p	7	7	oenso	oenso	NOUN
mk61rf5876p	7	8	process	process	NOUN
mk61rf5876p	7	9	has	have	AUX
mk61rf5876p	7	10	been	be	AUX
mk61rf5876p	7	11	extended	extend	VERB
mk61rf5876p	7	12	for	for	ADP
mk61rf5876p	7	13	use	use	NOUN
mk61rf5876p	7	14	in	in	ADP
mk61rf5876p	7	15	the	the	DET
mk61rf5876p	7	16	oxidation	oxidation	NOUN
mk61rf5876p	7	17	of	of	ADP
mk61rf5876p	7	18	ingaas	ingaas	NOUN
mk61rf5876p	7	19	lattice	lattice	NOUN
mk61rf5876p	7	20	matched	match	VERB
mk61rf5876p	7	21	to	to	ADP
mk61rf5876p	7	22	inp	inp	NOUN
mk61rf5876p	7	23	.	.	PUNCT
mk61rf5876p	8	1	as	as	ADP
mk61rf5876p	8	2	proof	proof	NOUN
mk61rf5876p	8	3	of	of	ADP
mk61rf5876p	8	4	the	the	DET
mk61rf5876p	8	5	efficacy	efficacy	NOUN
mk61rf5876p	8	6	of	of	ADP
mk61rf5876p	8	7	this	this	DET
mk61rf5876p	8	8	process	process	NOUN
mk61rf5876p	8	9	for	for	ADP
mk61rf5876p	8	10	use	use	NOUN
mk61rf5876p	8	11	in	in	ADP
mk61rf5876p	8	12	this	this	DET
mk61rf5876p	8	13	new	new	ADJ
mk61rf5876p	8	14	material	material	NOUN
mk61rf5876p	8	15	system	system	NOUN
mk61rf5876p	8	16	,	,	PUNCT
mk61rf5876p	8	17	a	a	DET
mk61rf5876p	8	18	novel	novel	ADJ
mk61rf5876p	8	19	native	native	ADJ
mk61rf5876p	8	20	-	-	PUNCT
mk61rf5876p	8	21	oxide	oxide	NOUN
mk61rf5876p	8	22	confined	confine	VERB
mk61rf5876p	8	23	quantum	quantum	NOUN
mk61rf5876p	8	24	cascade	cascade	NOUN
mk61rf5876p	8	25	laser	laser	NOUN
mk61rf5876p	8	26	operating	operating	NOUN
mk61rf5876p	8	27	at	at	ADP
mk61rf5876p	8	28	&	&	CCONJ
mk61rf5876p	8	29	#	#	SYM
mk61rf5876p	8	30	955;=5.4	955;=5.4	NUM
mk61rf5876p	8	31	&	&	CCONJ
mk61rf5876p	8	32	#	#	SYM
mk61rf5876p	8	33	956;m	956;m	NUM
mk61rf5876p	8	34	has	have	AUX
mk61rf5876p	8	35	been	be	AUX
mk61rf5876p	8	36	demonstrated	demonstrate	VERB
mk61rf5876p	8	37	.	.	PUNCT