id	sid	tid	token	lemma	pos
mg74qj7632r	1	1	this	this	DET
mg74qj7632r	1	2	dissertation	dissertation	NOUN
mg74qj7632r	1	3	aims	aim	VERB
mg74qj7632r	1	4	to	to	PART
mg74qj7632r	1	5	advance	advance	VERB
mg74qj7632r	1	6	the	the	DET
mg74qj7632r	1	7	fundamental	fundamental	ADJ
mg74qj7632r	1	8	optical	optical	ADJ
mg74qj7632r	1	9	toolkit	toolkit	NOUN
mg74qj7632r	1	10	by	by	ADP
mg74qj7632r	1	11	designing	design	VERB
mg74qj7632r	1	12	,	,	PUNCT
mg74qj7632r	1	13	fabricating	fabricating	NOUN
mg74qj7632r	1	14	,	,	PUNCT
mg74qj7632r	1	15	and	and	CCONJ
mg74qj7632r	1	16	characterizing	characterize	VERB
mg74qj7632r	1	17	novel	novel	ADJ
mg74qj7632r	1	18	fir	fir	NOUN
mg74qj7632r	1	19	light	light	NOUN
mg74qj7632r	1	20	sources	source	NOUN
mg74qj7632r	1	21	that	that	PRON
mg74qj7632r	1	22	drastically	drastically	ADV
mg74qj7632r	1	23	exceed	exceed	VERB
mg74qj7632r	1	24	the	the	DET
mg74qj7632r	1	25	state	state	NOUN
mg74qj7632r	1	26	-	-	PUNCT
mg74qj7632r	1	27	of	of	ADP
mg74qj7632r	1	28	-	-	PUNCT
mg74qj7632r	1	29	the	the	DET
mg74qj7632r	1	30	-	-	PUNCT
mg74qj7632r	1	31	art	art	NOUN
mg74qj7632r	1	32	.	.	PUNCT
mg74qj7632r	2	1	these	these	DET
mg74qj7632r	2	2	new	new	ADJ
mg74qj7632r	2	3	devices	device	NOUN
mg74qj7632r	2	4	will	will	AUX
mg74qj7632r	2	5	engineer	engineer	VERB
mg74qj7632r	2	6	interactions	interaction	NOUN
mg74qj7632r	2	7	between	between	ADP
mg74qj7632r	2	8	lattice	lattice	NOUN
mg74qj7632r	2	9	vibrations	vibration	NOUN
mg74qj7632r	2	10	and	and	CCONJ
mg74qj7632r	2	11	quantum	quantum	NOUN
mg74qj7632r	2	12	structures	structure	NOUN
mg74qj7632r	2	13	to	to	PART
mg74qj7632r	2	14	generate	generate	VERB
mg74qj7632r	2	15	fir	fir	NOUN
mg74qj7632r	2	16	electromagnetic	electromagnetic	ADJ
mg74qj7632r	2	17	radiation	radiation	NOUN
mg74qj7632r	2	18	that	that	PRON
mg74qj7632r	2	19	exceeds	exceed	VERB
mg74qj7632r	2	20	the	the	DET
mg74qj7632r	2	21	emission	emission	NOUN
mg74qj7632r	2	22	from	from	ADP
mg74qj7632r	2	23	blackbody	blackbody	ADJ
mg74qj7632r	2	24	sources	source	NOUN
mg74qj7632r	2	25	.	.	PUNCT
mg74qj7632r	3	1	in	in	ADP
mg74qj7632r	3	2	particular	particular	ADJ
mg74qj7632r	3	3	,	,	PUNCT
mg74qj7632r	3	4	we	we	PRON
mg74qj7632r	3	5	develop	develop	VERB
mg74qj7632r	3	6	traditional	traditional	ADJ
mg74qj7632r	3	7	iii	iii	NUM
mg74qj7632r	3	8	-	-	PUNCT
mg74qj7632r	3	9	v	v	NOUN
mg74qj7632r	3	10	semiconductor	semiconductor	NOUN
mg74qj7632r	3	11	materials	material	NOUN
mg74qj7632r	3	12	and	and	CCONJ
mg74qj7632r	3	13	opto	opto	ADJ
mg74qj7632r	3	14	-	-	PUNCT
mg74qj7632r	3	15	phononic	phononic	ADJ
mg74qj7632r	3	16	-	-	PUNCT
mg74qj7632r	3	17	electronic	electronic	ADJ
mg74qj7632r	3	18	(	(	PUNCT
mg74qj7632r	3	19	ope	ope	NOUN
mg74qj7632r	3	20	)	)	PUNCT
mg74qj7632r	3	21	devices	device	NOUN
mg74qj7632r	3	22	by	by	ADP
mg74qj7632r	3	23	engineering	engineer	VERB
mg74qj7632r	3	24	electronic	electronic	ADJ
mg74qj7632r	3	25	transport	transport	NOUN
mg74qj7632r	3	26	and	and	CCONJ
mg74qj7632r	3	27	optical	optical	ADJ
mg74qj7632r	3	28	modes	mode	NOUN
mg74qj7632r	3	29	,	,	PUNCT
mg74qj7632r	3	30	and	and	CCONJ
mg74qj7632r	3	31	the	the	DET
mg74qj7632r	3	32	interaction	interaction	NOUN
mg74qj7632r	3	33	between	between	ADP
mg74qj7632r	3	34	photons	photon	NOUN
mg74qj7632r	3	35	and	and	CCONJ
mg74qj7632r	3	36	phonons.this	phonons.this	DET
mg74qj7632r	3	37	work	work	NOUN
mg74qj7632r	3	38	has	have	AUX
mg74qj7632r	3	39	shown	show	VERB
mg74qj7632r	3	40	two	two	NUM
mg74qj7632r	3	41	structures	structure	NOUN
mg74qj7632r	3	42	of	of	ADP
mg74qj7632r	3	43	fir	fir	NOUN
mg74qj7632r	3	44	emitters	emitter	NOUN
mg74qj7632r	3	45	,	,	PUNCT
mg74qj7632r	3	46	including	include	VERB
mg74qj7632r	3	47	the	the	DET
mg74qj7632r	3	48	surface	surface	NOUN
mg74qj7632r	3	49	cascaded	cascade	VERB
mg74qj7632r	3	50	phonon	phonon	NOUN
mg74qj7632r	3	51	-	-	PUNCT
mg74qj7632r	3	52	polariton	polariton	NOUN
mg74qj7632r	3	53	emitters	emitter	NOUN
mg74qj7632r	3	54	,	,	PUNCT
mg74qj7632r	3	55	and	and	CCONJ
mg74qj7632r	3	56	metal	metal	NOUN
mg74qj7632r	3	57	-	-	PUNCT
mg74qj7632r	3	58	metal	metal	NOUN
mg74qj7632r	3	59	waveguide	waveguide	NOUN
mg74qj7632r	3	60	phonon	phonon	NOUN
mg74qj7632r	3	61	-	-	PUNCT
mg74qj7632r	3	62	polariton	polariton	NOUN
mg74qj7632r	3	63	emitters	emitter	NOUN
mg74qj7632r	3	64	.	.	PUNCT
mg74qj7632r	4	1	the	the	DET
mg74qj7632r	4	2	work	work	NOUN
mg74qj7632r	4	3	demonstrated	demonstrate	VERB
mg74qj7632r	4	4	both	both	CCONJ
mg74qj7632r	4	5	the	the	DET
mg74qj7632r	4	6	photonic	photonic	ADJ
mg74qj7632r	4	7	and	and	CCONJ
mg74qj7632r	4	8	phononic	phononic	ADJ
mg74qj7632r	4	9	characterization	characterization	NOUN
mg74qj7632r	4	10	of	of	ADP
mg74qj7632r	4	11	each	each	PRON
mg74qj7632r	4	12	of	of	ADP
mg74qj7632r	4	13	these	these	DET
mg74qj7632r	4	14	devices	device	NOUN
mg74qj7632r	4	15	.	.	PUNCT
mg74qj7632r	5	1	first	first	ADJ
mg74qj7632r	5	2	,	,	PUNCT
mg74qj7632r	5	3	surface	surface	NOUN
mg74qj7632r	5	4	cascade	cascade	NOUN
mg74qj7632r	5	5	devices	device	NOUN
mg74qj7632r	5	6	exhibit	exhibit	VERB
mg74qj7632r	5	7	strong	strong	ADJ
mg74qj7632r	5	8	emission	emission	NOUN
mg74qj7632r	5	9	close	close	ADV
mg74qj7632r	5	10	to	to	ADP
mg74qj7632r	5	11	the	the	DET
mg74qj7632r	5	12	gaas	gaas	PROPN
mg74qj7632r	5	13	lo	lo	PROPN
mg74qj7632r	5	14	phonon	phonon	NOUN
mg74qj7632r	5	15	energy	energy	NOUN
mg74qj7632r	5	16	.	.	PUNCT
mg74qj7632r	6	1	the	the	DET
mg74qj7632r	6	2	emission	emission	NOUN
mg74qj7632r	6	3	is	be	AUX
mg74qj7632r	6	4	compared	compare	VERB
mg74qj7632r	6	5	directly	directly	ADV
mg74qj7632r	6	6	to	to	ADP
mg74qj7632r	6	7	thermal	thermal	ADJ
mg74qj7632r	6	8	emission	emission	NOUN
mg74qj7632r	6	9	.	.	PUNCT
mg74qj7632r	7	1	second	second	ADV
mg74qj7632r	7	2	,	,	PUNCT
mg74qj7632r	7	3	we	we	PRON
mg74qj7632r	7	4	show	show	VERB
mg74qj7632r	7	5	the	the	DET
mg74qj7632r	7	6	modeling	modeling	NOUN
mg74qj7632r	7	7	and	and	CCONJ
mg74qj7632r	7	8	experimental	experimental	ADJ
mg74qj7632r	7	9	results	result	NOUN
mg74qj7632r	7	10	for	for	ADP
mg74qj7632r	7	11	phonon	phonon	ADJ
mg74qj7632r	7	12	-	-	PUNCT
mg74qj7632r	7	13	polariton	polariton	NOUN
mg74qj7632r	7	14	edge	edge	NOUN
mg74qj7632r	7	15	emitters	emitter	NOUN
mg74qj7632r	7	16	,	,	PUNCT
mg74qj7632r	7	17	including	include	VERB
mg74qj7632r	7	18	the	the	DET
mg74qj7632r	7	19	quantum	quantum	ADJ
mg74qj7632r	7	20	model	model	NOUN
mg74qj7632r	7	21	of	of	ADP
mg74qj7632r	7	22	gain	gain	NOUN
mg74qj7632r	7	23	,	,	PUNCT
mg74qj7632r	7	24	quantum	quantum	NOUN
mg74qj7632r	7	25	well	well	NOUN
mg74qj7632r	7	26	heterostructure	heterostructure	NOUN
mg74qj7632r	7	27	design	design	NOUN
mg74qj7632r	7	28	,	,	PUNCT
mg74qj7632r	7	29	polariton	polariton	NOUN
mg74qj7632r	7	30	dispersion	dispersion	NOUN
mg74qj7632r	7	31	,	,	PUNCT
mg74qj7632r	7	32	fabrication	fabrication	NOUN
mg74qj7632r	7	33	,	,	PUNCT
mg74qj7632r	7	34	and	and	CCONJ
mg74qj7632r	7	35	electrical	electrical	ADJ
mg74qj7632r	7	36	characterization	characterization	NOUN
mg74qj7632r	7	37	.	.	PUNCT
mg74qj7632r	8	1	finally	finally	ADV
mg74qj7632r	8	2	,	,	PUNCT
mg74qj7632r	8	3	to	to	PART
mg74qj7632r	8	4	investigate	investigate	VERB
mg74qj7632r	8	5	the	the	DET
mg74qj7632r	8	6	photon	photon	NOUN
mg74qj7632r	8	7	-	-	PUNCT
mg74qj7632r	8	8	electron	electron	NOUN
mg74qj7632r	8	9	-	-	PUNCT
mg74qj7632r	8	10	phonon	phonon	NOUN
mg74qj7632r	8	11	tripartite	tripartite	ADJ
mg74qj7632r	8	12	coupling	coupling	NOUN
mg74qj7632r	8	13	mechanism	mechanism	NOUN
mg74qj7632r	8	14	and	and	CCONJ
mg74qj7632r	8	15	thermal	thermal	ADJ
mg74qj7632r	8	16	characteristics	characteristic	NOUN
mg74qj7632r	8	17	of	of	ADP
mg74qj7632r	8	18	such	such	ADJ
mg74qj7632r	8	19	complex	complex	ADJ
mg74qj7632r	8	20	infrared	infrared	ADJ
mg74qj7632r	8	21	emitters	emitter	NOUN
mg74qj7632r	8	22	,	,	PUNCT
mg74qj7632r	8	23	we	we	PRON
mg74qj7632r	8	24	use	use	VERB
mg74qj7632r	8	25	raman	raman	ADJ
mg74qj7632r	8	26	spectroscopy	spectroscopy	NOUN
mg74qj7632r	8	27	-	-	PUNCT
mg74qj7632r	8	28	based	base	VERB
mg74qj7632r	8	29	techniques	technique	NOUN
mg74qj7632r	8	30	to	to	PART
mg74qj7632r	8	31	determine	determine	VERB
mg74qj7632r	8	32	the	the	DET
mg74qj7632r	8	33	temperature	temperature	NOUN
mg74qj7632r	8	34	distribution	distribution	NOUN
mg74qj7632r	8	35	and	and	CCONJ
mg74qj7632r	8	36	thermal	thermal	ADJ
mg74qj7632r	8	37	conductivity	conductivity	NOUN
mg74qj7632r	8	38	from	from	ADP
mg74qj7632r	8	39	a	a	DET
mg74qj7632r	8	40	continuous	continuous	ADJ
mg74qj7632r	8	41	wave	wave	NOUN
mg74qj7632r	8	42	(	(	PUNCT
mg74qj7632r	8	43	cw	cw	PROPN
mg74qj7632r	8	44	)	)	PUNCT
mg74qj7632r	8	45	mode	mode	NOUN
mg74qj7632r	8	46	quantum	quantum	NOUN
mg74qj7632r	8	47	cascade	cascade	NOUN
mg74qj7632r	8	48	laser	laser	NOUN
mg74qj7632r	8	49	(	(	PUNCT
mg74qj7632r	8	50	qcl	qcl	NOUN
mg74qj7632r	8	51	)	)	PUNCT
mg74qj7632r	8	52	at	at	ADP
mg74qj7632r	8	53	room	room	NOUN
mg74qj7632r	8	54	temperature	temperature	NOUN
mg74qj7632r	8	55	.	.	PUNCT
mg74qj7632r	9	1	the	the	DET
mg74qj7632r	9	2	work	work	NOUN
mg74qj7632r	9	3	has	have	AUX
mg74qj7632r	9	4	shown	show	VERB
mg74qj7632r	9	5	the	the	DET
mg74qj7632r	9	6	raman	raman	ADJ
mg74qj7632r	9	7	peak	peak	NOUN
mg74qj7632r	9	8	shift	shift	NOUN
mg74qj7632r	9	9	of	of	ADP
mg74qj7632r	9	10	both	both	CCONJ
mg74qj7632r	9	11	the	the	DET
mg74qj7632r	9	12	inas	inas	PROPN
mg74qj7632r	9	13	transverse	transverse	NOUN
mg74qj7632r	9	14	optical	optical	ADJ
mg74qj7632r	9	15	(	(	PUNCT
mg74qj7632r	9	16	to	to	PART
mg74qj7632r	9	17	)	)	PUNCT
mg74qj7632r	9	18	and	and	CCONJ
mg74qj7632r	9	19	gaas	gaas	NOUN
mg74qj7632r	9	20	to	to	ADP
mg74qj7632r	9	21	phonons	phonon	NOUN
mg74qj7632r	9	22	provide	provide	VERB
mg74qj7632r	9	23	a	a	DET
mg74qj7632r	9	24	robust	robust	ADJ
mg74qj7632r	9	25	way	way	NOUN
mg74qj7632r	9	26	to	to	AUX
mg74qj7632r	9	27	cross	cross	VERB
mg74qj7632r	9	28	-	-	VERB
mg74qj7632r	9	29	check	check	VERB
mg74qj7632r	9	30	the	the	DET
mg74qj7632r	9	31	extracted	extract	VERB
mg74qj7632r	9	32	output	output	NOUN
mg74qj7632r	9	33	facet	facet	NOUN
mg74qj7632r	9	34	temperature	temperature	NOUN
mg74qj7632r	9	35	and	and	CCONJ
mg74qj7632r	9	36	anisotropic	anisotropic	NOUN
mg74qj7632r	9	37	thermal	thermal	ADJ
mg74qj7632r	9	38	conductivity	conductivity	NOUN
mg74qj7632r	9	39	.	.	PUNCT
mg74qj7632r	10	1	the	the	DET
mg74qj7632r	10	2	techniques	technique	NOUN
mg74qj7632r	10	3	provide	provide	VERB
mg74qj7632r	10	4	a	a	DET
mg74qj7632r	10	5	valuable	valuable	ADJ
mg74qj7632r	10	6	toolkit	toolkit	NOUN
mg74qj7632r	10	7	to	to	PART
mg74qj7632r	10	8	characterize	characterize	VERB
mg74qj7632r	10	9	the	the	DET
mg74qj7632r	10	10	thermal	thermal	ADJ
mg74qj7632r	10	11	emission	emission	NOUN
mg74qj7632r	10	12	and	and	CCONJ
mg74qj7632r	10	13	optical	optical	ADJ
mg74qj7632r	10	14	emission	emission	NOUN
mg74qj7632r	10	15	in	in	ADP
mg74qj7632r	10	16	the	the	DET
mg74qj7632r	10	17	ope	ope	NOUN
mg74qj7632r	10	18	devices	device	NOUN
mg74qj7632r	10	19	in	in	ADP
mg74qj7632r	10	20	the	the	DET
mg74qj7632r	10	21	fir	fir	NOUN
mg74qj7632r	10	22	range	range	NOUN
mg74qj7632r	10	23	.	.	PUNCT
mg74qj7632r	11	1	this	this	DET
mg74qj7632r	11	2	work	work	NOUN
mg74qj7632r	11	3	is	be	AUX
mg74qj7632r	11	4	important	important	ADJ
mg74qj7632r	11	5	for	for	ADP
mg74qj7632r	11	6	the	the	DET
mg74qj7632r	11	7	design	design	NOUN
mg74qj7632r	11	8	of	of	ADP
mg74qj7632r	11	9	the	the	DET
mg74qj7632r	11	10	qcl	qcl	NOUN
mg74qj7632r	11	11	-	-	PUNCT
mg74qj7632r	11	12	based	base	VERB
mg74qj7632r	11	13	photonic	photonic	ADJ
mg74qj7632r	11	14	integrated	integrate	VERB
mg74qj7632r	11	15	circuits	circuit	NOUN
mg74qj7632r	11	16	in	in	ADP
mg74qj7632r	11	17	the	the	DET
mg74qj7632r	11	18	infrared	infrared	ADJ
mg74qj7632r	11	19	wavelengths	wavelength	NOUN
mg74qj7632r	11	20	,	,	PUNCT
mg74qj7632r	11	21	improving	improve	VERB
mg74qj7632r	11	22	the	the	DET
mg74qj7632r	11	23	accuracy	accuracy	NOUN
mg74qj7632r	11	24	of	of	ADP
mg74qj7632r	11	25	device	device	NOUN
mg74qj7632r	11	26	selection	selection	NOUN
mg74qj7632r	11	27	,	,	PUNCT
mg74qj7632r	11	28	failure	failure	NOUN
mg74qj7632r	11	29	analysis	analysis	NOUN
mg74qj7632r	11	30	,	,	PUNCT
mg74qj7632r	11	31	and	and	CCONJ
mg74qj7632r	11	32	thermal	thermal	ADJ
mg74qj7632r	11	33	management	management	NOUN
mg74qj7632r	11	34	in	in	ADP
mg74qj7632r	11	35	manufacturing	manufacturing	NOUN
mg74qj7632r	11	36	.	.	PUNCT