id	sid	tid	token	lemma	pos
m039k358k7t	1	1	this	this	DET
m039k358k7t	1	2	thesis	thesis	NOUN
m039k358k7t	1	3	is	be	AUX
m039k358k7t	1	4	devoted	devote	VERB
m039k358k7t	1	5	to	to	ADP
m039k358k7t	1	6	the	the	DET
m039k358k7t	1	7	study	study	NOUN
m039k358k7t	1	8	of	of	ADP
m039k358k7t	1	9	magnetic	magnetic	ADJ
m039k358k7t	1	10	properties	property	NOUN
m039k358k7t	1	11	of	of	ADP
m039k358k7t	1	12	multilayer	multilayer	ADJ
m039k358k7t	1	13	structures	structure	NOUN
m039k358k7t	1	14	involving	involve	VERB
m039k358k7t	1	15	combinations	combination	NOUN
m039k358k7t	1	16	of	of	ADP
m039k358k7t	1	17	a	a	DET
m039k358k7t	1	18	ferromagnetic	ferromagnetic	ADJ
m039k358k7t	1	19	metal	metal	NOUN
m039k358k7t	1	20	with	with	ADP
m039k358k7t	1	21	a	a	DET
m039k358k7t	1	22	semiconductor	semiconductor	NOUN
m039k358k7t	1	23	.	.	PUNCT
m039k358k7t	2	1	understanding	understand	VERB
m039k358k7t	2	2	such	such	ADJ
m039k358k7t	2	3	is	be	AUX
m039k358k7t	2	4	expected	expect	VERB
m039k358k7t	2	5	to	to	PART
m039k358k7t	2	6	be	be	AUX
m039k358k7t	2	7	relevant	relevant	ADJ
m039k358k7t	2	8	for	for	ADP
m039k358k7t	2	9	achieving	achieve	VERB
m039k358k7t	2	10	integrated	integrated	ADJ
m039k358k7t	2	11	spintronic	spintronic	ADJ
m039k358k7t	2	12	devices	device	NOUN
m039k358k7t	2	13	,	,	PUNCT
m039k358k7t	2	14	i.e.	i.e.	X
m039k358k7t	2	15	,	,	PUNCT
m039k358k7t	2	16	applications	application	NOUN
m039k358k7t	2	17	that	that	PRON
m039k358k7t	2	18	depend	depend	VERB
m039k358k7t	2	19	on	on	ADP
m039k358k7t	2	20	electronic	electronic	ADJ
m039k358k7t	2	21	and	and	CCONJ
m039k358k7t	2	22	spin	spin	NOUN
m039k358k7t	2	23	effects	effect	NOUN
m039k358k7t	2	24	of	of	ADP
m039k358k7t	2	25	the	the	DET
m039k358k7t	2	26	system	system	NOUN
m039k358k7t	2	27	as	as	ADP
m039k358k7t	2	28	a	a	DET
m039k358k7t	2	29	whole	whole	NOUN
m039k358k7t	2	30	.	.	PUNCT
m039k358k7t	3	1	specifically	specifically	ADV
m039k358k7t	3	2	,	,	PUNCT
m039k358k7t	3	3	we	we	PRON
m039k358k7t	3	4	explore	explore	VERB
m039k358k7t	3	5	structures	structure	NOUN
m039k358k7t	3	6	comprised	comprise	VERB
m039k358k7t	3	7	of	of	ADP
m039k358k7t	3	8	ferromagnetic	ferromagnetic	ADJ
m039k358k7t	3	9	layers	layer	NOUN
m039k358k7t	3	10	of	of	ADP
m039k358k7t	3	11	fe	fe	PROPN
m039k358k7t	3	12	deposited	deposit	VERB
m039k358k7t	3	13	on	on	ADP
m039k358k7t	3	14	semiconductors	semiconductor	NOUN
m039k358k7t	3	15	gaas	gaas	NOUN
m039k358k7t	3	16	,	,	PUNCT
m039k358k7t	3	17	znse	znse	PROPN
m039k358k7t	3	18	and	and	CCONJ
m039k358k7t	3	19	ge	ge	PROPN
m039k358k7t	3	20	fabricated	fabricate	VERB
m039k358k7t	3	21	by	by	ADP
m039k358k7t	3	22	the	the	DET
m039k358k7t	3	23	method	method	NOUN
m039k358k7t	3	24	of	of	ADP
m039k358k7t	3	25	molecular	molecular	ADJ
m039k358k7t	3	26	beam	beam	NOUN
m039k358k7t	3	27	epitaxy	epitaxy	PROPN
m039k358k7t	3	28	.	.	PUNCT
m039k358k7t	4	1	the	the	DET
m039k358k7t	4	2	ability	ability	NOUN
m039k358k7t	4	3	of	of	ADP
m039k358k7t	4	4	growing	grow	VERB
m039k358k7t	4	5	fe	fe	PROPN
m039k358k7t	4	6	films	film	NOUN
m039k358k7t	4	7	of	of	ADP
m039k358k7t	4	8	high	high	ADJ
m039k358k7t	4	9	crystalline	crystalline	ADJ
m039k358k7t	4	10	quality	quality	NOUN
m039k358k7t	4	11	on	on	ADP
m039k358k7t	4	12	these	these	DET
m039k358k7t	4	13	semiconductor	semiconductor	NOUN
m039k358k7t	4	14	layers	layer	NOUN
m039k358k7t	4	15	is	be	AUX
m039k358k7t	4	16	made	make	VERB
m039k358k7t	4	17	possible	possible	ADJ
m039k358k7t	4	18	by	by	ADP
m039k358k7t	4	19	a	a	DET
m039k358k7t	4	20	fortuitous	fortuitous	ADJ
m039k358k7t	4	21	between	between	ADP
m039k358k7t	4	22	match	match	VERB
m039k358k7t	4	23	the	the	DET
m039k358k7t	4	24	body	body	NOUN
m039k358k7t	4	25	-	-	PUNCT
m039k358k7t	4	26	centered	center	VERB
m039k358k7t	4	27	cubic	cubic	ADJ
m039k358k7t	4	28	crystal	crystal	NOUN
m039k358k7t	4	29	structure	structure	NOUN
m039k358k7t	4	30	of	of	ADP
m039k358k7t	4	31	fe	fe	PROPN
m039k358k7t	4	32	and	and	CCONJ
m039k358k7t	4	33	the	the	DET
m039k358k7t	4	34	face	face	NOUN
m039k358k7t	4	35	-	-	PUNCT
m039k358k7t	4	36	centered	center	VERB
m039k358k7t	4	37	cubic	cubic	ADJ
m039k358k7t	4	38	structure	structure	NOUN
m039k358k7t	4	39	of	of	ADP
m039k358k7t	4	40	gaas	gaas	NOUN
m039k358k7t	4	41	,	,	PUNCT
m039k358k7t	4	42	znse	znse	PROPN
m039k358k7t	4	43	and	and	CCONJ
m039k358k7t	4	44	ge	ge	PROPN
m039k358k7t	4	45	.	.	PUNCT
m039k358k7t	5	1	the	the	DET
m039k358k7t	5	2	fe	fe	PROPN
m039k358k7t	5	3	films	film	NOUN
m039k358k7t	5	4	so	so	ADV
m039k358k7t	5	5	fabricated	fabricate	VERB
m039k358k7t	5	6	,	,	PUNCT
m039k358k7t	5	7	and	and	CCONJ
m039k358k7t	5	8	are	be	AUX
m039k358k7t	5	9	capped	cap	VERB
m039k358k7t	5	10	by	by	ADP
m039k358k7t	5	11	au	au	NOUN
m039k358k7t	5	12	or	or	CCONJ
m039k358k7t	5	13	al	al	PROPN
m039k358k7t	5	14	to	to	PART
m039k358k7t	5	15	protect	protect	VERB
m039k358k7t	5	16	the	the	DET
m039k358k7t	5	17	film	film	NOUN
m039k358k7t	5	18	from	from	ADP
m039k358k7t	5	19	oxidation	oxidation	NOUN
m039k358k7t	5	20	after	after	SCONJ
m039k358k7t	5	21	it	it	PRON
m039k358k7t	5	22	is	be	AUX
m039k358k7t	5	23	taken	take	VERB
m039k358k7t	5	24	out	out	ADP
m039k358k7t	5	25	of	of	ADP
m039k358k7t	5	26	the	the	DET
m039k358k7t	5	27	growth	growth	NOUN
m039k358k7t	5	28	chamber	chamber	NOUN
m039k358k7t	5	29	.	.	PUNCT
m039k358k7t	6	1	in	in	ADP
m039k358k7t	6	2	investigating	investigate	VERB
m039k358k7t	6	3	these	these	DET
m039k358k7t	6	4	hybrid	hybrid	ADJ
m039k358k7t	6	5	magnetic	magnetic	ADJ
m039k358k7t	6	6	metal	metal	NOUN
m039k358k7t	6	7	/	/	SYM
m039k358k7t	6	8	semiconductor	semiconductor	NOUN
m039k358k7t	6	9	structures	structure	NOUN
m039k358k7t	6	10	,	,	PUNCT
m039k358k7t	6	11	we	we	PRON
m039k358k7t	6	12	first	first	ADV
m039k358k7t	6	13	focus	focus	VERB
m039k358k7t	6	14	on	on	ADP
m039k358k7t	6	15	determining	determine	VERB
m039k358k7t	6	16	their	their	PRON
m039k358k7t	6	17	static	static	ADJ
m039k358k7t	6	18	magnetic	magnetic	ADJ
m039k358k7t	6	19	properties	property	NOUN
m039k358k7t	6	20	by	by	ADP
m039k358k7t	6	21	systematic	systematic	ADJ
m039k358k7t	6	22	magnetization	magnetization	NOUN
m039k358k7t	6	23	measurements	measurement	NOUN
m039k358k7t	6	24	carried	carry	VERB
m039k358k7t	6	25	out	out	ADP
m039k358k7t	6	26	using	use	VERB
m039k358k7t	6	27	a	a	DET
m039k358k7t	6	28	superconducting	superconducte	VERB
m039k358k7t	6	29	quantum	quantum	ADJ
m039k358k7t	6	30	interference	interference	NOUN
m039k358k7t	6	31	device	device	NOUN
m039k358k7t	6	32	(	(	PUNCT
m039k358k7t	6	33	squid	squid	NOUN
m039k358k7t	6	34	)	)	PUNCT
m039k358k7t	6	35	.	.	PUNCT
m039k358k7t	7	1	these	these	DET
m039k358k7t	7	2	studies	study	NOUN
m039k358k7t	7	3	reveal	reveal	VERB
m039k358k7t	7	4	that	that	SCONJ
m039k358k7t	7	5	the	the	DET
m039k358k7t	7	6	magnetic	magnetic	ADJ
m039k358k7t	7	7	properties	property	NOUN
m039k358k7t	7	8	of	of	ADP
m039k358k7t	7	9	these	these	DET
m039k358k7t	7	10	highly	highly	ADV
m039k358k7t	7	11	crystalline	crystalline	ADJ
m039k358k7t	7	12	fe	fe	PROPN
m039k358k7t	7	13	films	film	NOUN
m039k358k7t	7	14	are	be	AUX
m039k358k7t	7	15	highly	highly	ADV
m039k358k7t	7	16	anisotropic	anisotropic	ADJ
m039k358k7t	7	17	,	,	PUNCT
m039k358k7t	7	18	with	with	ADP
m039k358k7t	7	19	well	well	ADV
m039k358k7t	7	20	-	-	PUNCT
m039k358k7t	7	21	defined	define	VERB
m039k358k7t	7	22	easy	easy	ADJ
m039k358k7t	7	23	axes	axis	NOUN
m039k358k7t	7	24	of	of	ADP
m039k358k7t	7	25	magnetization	magnetization	NOUN
m039k358k7t	7	26	.	.	PUNCT
m039k358k7t	8	1	they	they	PRON
m039k358k7t	8	2	also	also	ADV
m039k358k7t	8	3	reveal	reveal	VERB
m039k358k7t	8	4	a	a	DET
m039k358k7t	8	5	strong	strong	ADJ
m039k358k7t	8	6	dependence	dependence	NOUN
m039k358k7t	8	7	of	of	ADP
m039k358k7t	8	8	their	their	PRON
m039k358k7t	8	9	magnetic	magnetic	ADJ
m039k358k7t	8	10	anisotropy	anisotropy	NOUN
m039k358k7t	8	11	on	on	ADP
m039k358k7t	8	12	the	the	DET
m039k358k7t	8	13	underlying	underlying	ADJ
m039k358k7t	8	14	semiconductor	semiconductor	NOUN
m039k358k7t	8	15	materials	material	NOUN
m039k358k7t	8	16	,	,	PUNCT
m039k358k7t	8	17	as	as	SCONJ
m039k358k7t	8	18	follows	follow	VERB
m039k358k7t	8	19	.	.	PUNCT
m039k358k7t	9	1	the	the	DET
m039k358k7t	9	2	gaas	gaas	PROPN
m039k358k7t	9	3	/	/	SYM
m039k358k7t	9	4	fe	fe	PROPN
m039k358k7t	9	5	structures	structure	NOUN
m039k358k7t	9	6	show	show	VERB
m039k358k7t	9	7	a	a	DET
m039k358k7t	9	8	strong	strong	ADJ
m039k358k7t	9	9	uniaxial	uniaxial	ADJ
m039k358k7t	9	10	magneto	magneto	NOUN
m039k358k7t	9	11	-	-	PUNCT
m039k358k7t	9	12	crystalline	crystalline	NOUN
m039k358k7t	9	13	symmetry	symmetry	NOUN
m039k358k7t	9	14	in	in	ADP
m039k358k7t	9	15	the	the	DET
m039k358k7t	9	16	plane	plane	NOUN
m039k358k7t	9	17	of	of	ADP
m039k358k7t	9	18	the	the	DET
m039k358k7t	9	19	film	film	NOUN
m039k358k7t	9	20	;	;	PUNCT
m039k358k7t	9	21	znse	znse	PROPN
m039k358k7t	9	22	/	/	SYM
m039k358k7t	9	23	fe	fe	PROPN
m039k358k7t	9	24	multilayers	multilayer	NOUN
m039k358k7t	9	25	show	show	VERB
m039k358k7t	9	26	a	a	DET
m039k358k7t	9	27	finite	finite	ADJ
m039k358k7t	9	28	but	but	CCONJ
m039k358k7t	9	29	weak	weak	ADJ
m039k358k7t	9	30	uniaxial	uniaxial	NOUN
m039k358k7t	9	31	anisotropy	anisotropy	NOUN
m039k358k7t	9	32	;	;	PUNCT
m039k358k7t	9	33	and	and	CCONJ
m039k358k7t	9	34	ge	ge	PROPN
m039k358k7t	9	35	/	/	SYM
m039k358k7t	9	36	fe	fe	PROPN
m039k358k7t	9	37	show	show	VERB
m039k358k7t	9	38	a	a	DET
m039k358k7t	9	39	fully	fully	ADV
m039k358k7t	9	40	cubic	cubic	ADJ
m039k358k7t	9	41	symmetry	symmetry	NOUN
m039k358k7t	9	42	.	.	PUNCT
m039k358k7t	10	1	these	these	DET
m039k358k7t	10	2	studies	study	NOUN
m039k358k7t	10	3	are	be	AUX
m039k358k7t	10	4	followed	follow	VERB
m039k358k7t	10	5	by	by	ADP
m039k358k7t	10	6	measurements	measurement	NOUN
m039k358k7t	10	7	of	of	ADP
m039k358k7t	10	8	the	the	DET
m039k358k7t	10	9	ferromagnetic	ferromagnetic	ADJ
m039k358k7t	10	10	resonance	resonance	NOUN
m039k358k7t	10	11	in	in	ADP
m039k358k7t	10	12	the	the	DET
m039k358k7t	10	13	semiconductor	semiconductor	NOUN
m039k358k7t	10	14	/	/	SYM
m039k358k7t	10	15	fe	fe	PROPN
m039k358k7t	10	16	systems	system	NOUN
m039k358k7t	10	17	,	,	PUNCT
m039k358k7t	10	18	which	which	PRON
m039k358k7t	10	19	provide	provide	VERB
m039k358k7t	10	20	the	the	DET
m039k358k7t	10	21	opportunity	opportunity	NOUN
m039k358k7t	10	22	for	for	ADP
m039k358k7t	10	23	a	a	DET
m039k358k7t	10	24	quantitative	quantitative	ADJ
m039k358k7t	10	25	determination	determination	NOUN
m039k358k7t	10	26	of	of	ADP
m039k358k7t	10	27	the	the	DET
m039k358k7t	10	28	magneto	magneto	NOUN
m039k358k7t	10	29	-	-	PUNCT
m039k358k7t	10	30	crystalline	crystalline	NOUN
m039k358k7t	10	31	anisotropy	anisotropy	NOUN
m039k358k7t	10	32	parameters	parameter	NOUN
m039k358k7t	10	33	revealed	reveal	VERB
m039k358k7t	10	34	qualitatively	qualitatively	ADV
m039k358k7t	10	35	in	in	ADP
m039k358k7t	10	36	the	the	DET
m039k358k7t	10	37	squid	squid	NOUN
m039k358k7t	10	38	measurements	measurement	NOUN
m039k358k7t	10	39	.	.	PUNCT
m039k358k7t	11	1	the	the	DET
m039k358k7t	11	2	quality	quality	NOUN
m039k358k7t	11	3	of	of	ADP
m039k358k7t	11	4	the	the	DET
m039k358k7t	11	5	fmr	fmr	PROPN
m039k358k7t	11	6	spectra	spectra	PROPN
m039k358k7t	11	7	further	far	ADV
m039k358k7t	11	8	attests	attest	VERB
m039k358k7t	11	9	to	to	ADP
m039k358k7t	11	10	the	the	DET
m039k358k7t	11	11	very	very	ADV
m039k358k7t	11	12	high	high	ADJ
m039k358k7t	11	13	crystalline	crystalline	NOUN
m039k358k7t	11	14	quality	quality	NOUN
m039k358k7t	11	15	of	of	ADP
m039k358k7t	11	16	the	the	DET
m039k358k7t	11	17	fe	fe	PROPN
m039k358k7t	11	18	films	film	NOUN
m039k358k7t	11	19	grown	grow	VERB
m039k358k7t	11	20	on	on	ADP
m039k358k7t	11	21	the	the	DET
m039k358k7t	11	22	gaas	gaas	NOUN
m039k358k7t	11	23	,	,	PUNCT
m039k358k7t	11	24	znse	znse	NOUN
m039k358k7t	11	25	and	and	CCONJ
m039k358k7t	11	26	ge	ge	PROPN
m039k358k7t	11	27	buffer	buffer	VERB
m039k358k7t	11	28	layers	layer	NOUN
m039k358k7t	11	29	.	.	PUNCT
m039k358k7t	12	1	having	having	AUX
m039k358k7t	12	2	determined	determine	VERB
m039k358k7t	12	3	their	their	PRON
m039k358k7t	12	4	magnetic	magnetic	ADJ
m039k358k7t	12	5	properties	property	NOUN
m039k358k7t	12	6	,	,	PUNCT
m039k358k7t	12	7	we	we	PRON
m039k358k7t	12	8	then	then	ADV
m039k358k7t	12	9	study	study	VERB
m039k358k7t	12	10	interactions	interaction	NOUN
m039k358k7t	12	11	of	of	ADP
m039k358k7t	12	12	the	the	DET
m039k358k7t	12	13	fe	fe	PROPN
m039k358k7t	12	14	films	film	NOUN
m039k358k7t	12	15	with	with	ADP
m039k358k7t	12	16	their	their	PRON
m039k358k7t	12	17	adjacent	adjacent	ADJ
m039k358k7t	12	18	neighbors	neighbor	NOUN
m039k358k7t	12	19	.	.	PUNCT
m039k358k7t	13	1	we	we	PRON
m039k358k7t	13	2	observed	observe	VERB
m039k358k7t	13	3	that	that	SCONJ
m039k358k7t	13	4	the	the	DET
m039k358k7t	13	5	gaas	gaas	NOUN
m039k358k7t	13	6	/	/	SYM
m039k358k7t	13	7	fe	fe	PROPN
m039k358k7t	13	8	structures	structure	NOUN
m039k358k7t	13	9	capped	cap	VERB
m039k358k7t	13	10	by	by	ADP
m039k358k7t	13	11	au	au	X
m039k358k7t	13	12	show	show	VERB
m039k358k7t	13	13	striking	strike	VERB
m039k358k7t	13	14	exchange	exchange	NOUN
m039k358k7t	13	15	bias	bias	NOUN
m039k358k7t	13	16	effects	effect	NOUN
m039k358k7t	13	17	,	,	PUNCT
m039k358k7t	13	18	which	which	PRON
m039k358k7t	13	19	we	we	PRON
m039k358k7t	13	20	ascribe	ascribe	VERB
m039k358k7t	13	21	to	to	ADP
m039k358k7t	13	22	the	the	DET
m039k358k7t	13	23	formation	formation	NOUN
m039k358k7t	13	24	of	of	ADP
m039k358k7t	13	25	an	an	DET
m039k358k7t	13	26	antiferromagnetic	antiferromagnetic	ADJ
m039k358k7t	13	27	(	(	PUNCT
m039k358k7t	13	28	afm	afm	X
m039k358k7t	13	29	)	)	PUNCT
m039k358k7t	13	30	layer	layer	NOUN
m039k358k7t	13	31	.	.	PUNCT
m039k358k7t	14	1	while	while	SCONJ
m039k358k7t	14	2	no	no	DET
m039k358k7t	14	3	afm	afm	NOUN
m039k358k7t	14	4	layer	layer	NOUN
m039k358k7t	14	5	is	be	AUX
m039k358k7t	14	6	intentionally	intentionally	ADV
m039k358k7t	14	7	deposited	deposit	VERB
m039k358k7t	14	8	on	on	ADP
m039k358k7t	14	9	the	the	DET
m039k358k7t	14	10	fe	fe	PROPN
m039k358k7t	14	11	film	film	NOUN
m039k358k7t	14	12	,	,	PUNCT
m039k358k7t	14	13	we	we	PRON
m039k358k7t	14	14	conclude	conclude	VERB
m039k358k7t	14	15	that	that	DET
m039k358k7t	14	16	penetration	penetration	NOUN
m039k358k7t	14	17	of	of	ADP
m039k358k7t	14	18	oxygen	oxygen	NOUN
m039k358k7t	14	19	through	through	ADP
m039k358k7t	14	20	the	the	DET
m039k358k7t	14	21	thin	thin	ADJ
m039k358k7t	14	22	capping	capping	NOUN
m039k358k7t	14	23	au	au	ADJ
m039k358k7t	14	24	layer	layer	NOUN
m039k358k7t	14	25	leads	lead	VERB
m039k358k7t	14	26	to	to	ADP
m039k358k7t	14	27	the	the	DET
m039k358k7t	14	28	formation	formation	NOUN
m039k358k7t	14	29	of	of	ADP
m039k358k7t	14	30	feo	feo	PROPN
m039k358k7t	14	31	or	or	CCONJ
m039k358k7t	14	32	related	related	ADJ
m039k358k7t	14	33	oxide	oxide	NOUN
m039k358k7t	14	34	,	,	PUNCT
m039k358k7t	14	35	which	which	PRON
m039k358k7t	14	36	is	be	AUX
m039k358k7t	14	37	an	an	DET
m039k358k7t	14	38	antiferromagnet	antiferromagnet	NOUN
m039k358k7t	14	39	below	below	ADP
m039k358k7t	14	40	room	room	NOUN
m039k358k7t	14	41	temperature	temperature	NOUN
m039k358k7t	14	42	,	,	PUNCT
m039k358k7t	14	43	and	and	CCONJ
m039k358k7t	14	44	is	be	AUX
m039k358k7t	14	45	thus	thus	ADV
m039k358k7t	14	46	likely	likely	ADJ
m039k358k7t	14	47	to	to	PART
m039k358k7t	14	48	lead	lead	VERB
m039k358k7t	14	49	to	to	ADP
m039k358k7t	14	50	exchange	exchange	NOUN
m039k358k7t	14	51	bias	bias	NOUN
m039k358k7t	14	52	.	.	PUNCT
m039k358k7t	15	1	the	the	DET
m039k358k7t	15	2	exchange	exchange	NOUN
m039k358k7t	15	3	bias	bias	NOUN
m039k358k7t	15	4	studied	study	VERB
m039k358k7t	15	5	by	by	ADP
m039k358k7t	15	6	squid	squid	PROPN
m039k358k7t	15	7	then	then	ADV
m039k358k7t	15	8	allows	allow	VERB
m039k358k7t	15	9	us	we	PRON
m039k358k7t	15	10	to	to	PART
m039k358k7t	15	11	quantitatively	quantitatively	ADV
m039k358k7t	15	12	measure	measure	VERB
m039k358k7t	15	13	the	the	DET
m039k358k7t	15	14	exchange	exchange	NOUN
m039k358k7t	15	15	field	field	NOUN
m039k358k7t	15	16	arising	arise	VERB
m039k358k7t	15	17	from	from	ADP
m039k358k7t	15	18	the	the	DET
m039k358k7t	15	19	afm	afm	NOUN
m039k358k7t	15	20	film	film	NOUN
m039k358k7t	15	21	and	and	CCONJ
m039k358k7t	15	22	acting	act	VERB
m039k358k7t	15	23	on	on	ADP
m039k358k7t	15	24	the	the	DET
m039k358k7t	15	25	fe	fe	PROPN
m039k358k7t	15	26	layer	layer	NOUN
m039k358k7t	15	27	.	.	PUNCT
m039k358k7t	16	1	the	the	DET
m039k358k7t	16	2	exchange	exchange	NOUN
m039k358k7t	16	3	bias	bias	NOUN
m039k358k7t	16	4	effect	effect	NOUN
m039k358k7t	16	5	is	be	AUX
m039k358k7t	16	6	accompanied	accompany	VERB
m039k358k7t	16	7	by	by	ADP
m039k358k7t	16	8	highly	highly	ADV
m039k358k7t	16	9	-	-	PUNCT
m039k358k7t	16	10	asymmetric	asymmetric	ADJ
m039k358k7t	16	11	magnetic	magnetic	ADJ
m039k358k7t	16	12	hystereses	hysterese	NOUN
m039k358k7t	16	13	observed	observe	VERB
m039k358k7t	16	14	when	when	SCONJ
m039k358k7t	16	15	a	a	DET
m039k358k7t	16	16	magnetic	magnetic	ADJ
m039k358k7t	16	17	field	field	NOUN
m039k358k7t	16	18	is	be	AUX
m039k358k7t	16	19	applied	apply	VERB
m039k358k7t	16	20	at	at	ADP
m039k358k7t	16	21	different	different	ADJ
m039k358k7t	16	22	angles	angle	NOUN
m039k358k7t	16	23	to	to	ADP
m039k358k7t	16	24	the	the	DET
m039k358k7t	16	25	film	film	NOUN
m039k358k7t	16	26	.	.	PUNCT
m039k358k7t	17	1	the	the	DET
m039k358k7t	17	2	observed	observed	ADJ
m039k358k7t	17	3	hystereses	hysterese	NOUN
m039k358k7t	17	4	can	can	AUX
m039k358k7t	17	5	be	be	AUX
m039k358k7t	17	6	satisfactorily	satisfactorily	ADV
m039k358k7t	17	7	fitted	fit	VERB
m039k358k7t	17	8	by	by	ADP
m039k358k7t	17	9	the	the	DET
m039k358k7t	17	10	magnetic	magnetic	ADJ
m039k358k7t	17	11	free	free	ADJ
m039k358k7t	17	12	energy	energy	NOUN
m039k358k7t	17	13	modified	modify	VERB
m039k358k7t	17	14	by	by	ADP
m039k358k7t	17	15	including	include	VERB
m039k358k7t	17	16	a	a	DET
m039k358k7t	17	17	unidirectional	unidirectional	ADJ
m039k358k7t	17	18	exchange	exchange	NOUN
m039k358k7t	17	19	bias	bias	NOUN
m039k358k7t	17	20	term	term	NOUN
m039k358k7t	17	21	.	.	PUNCT
m039k358k7t	18	1	we	we	PRON
m039k358k7t	18	2	conclude	conclude	VERB
m039k358k7t	18	3	the	the	DET
m039k358k7t	18	4	study	study	NOUN
m039k358k7t	18	5	of	of	ADP
m039k358k7t	18	6	the	the	DET
m039k358k7t	18	7	fe	fe	PROPN
m039k358k7t	18	8	/	/	SYM
m039k358k7t	18	9	semiconductor	semiconductor	NOUN
m039k358k7t	18	10	hybrid	hybrid	NOUN
m039k358k7t	18	11	structures	structure	NOUN
m039k358k7t	18	12	by	by	ADP
m039k358k7t	18	13	investigating	investigate	VERB
m039k358k7t	18	14	the	the	DET
m039k358k7t	18	15	magnetic	magnetic	ADJ
m039k358k7t	18	16	properties	property	NOUN
m039k358k7t	18	17	of	of	ADP
m039k358k7t	18	18	fe	fe	PROPN
m039k358k7t	18	19	/	/	SYM
m039k358k7t	18	20	gaas	gaas	PROPN
m039k358k7t	18	21	core	core	NOUN
m039k358k7t	18	22	-	-	PUNCT
m039k358k7t	18	23	shell	shell	NOUN
m039k358k7t	18	24	nanowires	nanowire	NOUN
m039k358k7t	18	25	.	.	PUNCT
m039k358k7t	19	1	these	these	DET
m039k358k7t	19	2	structures	structure	NOUN
m039k358k7t	19	3	are	be	AUX
m039k358k7t	19	4	grown	grow	VERB
m039k358k7t	19	5	by	by	ADP
m039k358k7t	19	6	mbe	mbe	PROPN
m039k358k7t	19	7	using	use	VERB
m039k358k7t	19	8	catalytic	catalytic	ADJ
m039k358k7t	19	9	nucleation	nucleation	NOUN
m039k358k7t	19	10	of	of	ADP
m039k358k7t	19	11	gaas	gaas	NOUN
m039k358k7t	19	12	nanowires	nanowire	NOUN
m039k358k7t	19	13	of	of	ADP
m039k358k7t	19	14	about	about	ADV
m039k358k7t	19	15	10	10	NUM
m039k358k7t	19	16	nm	nm	NOUN
m039k358k7t	19	17	diameter	diameter	NOUN
m039k358k7t	19	18	and	and	CCONJ
m039k358k7t	19	19	2000	2000	NUM
m039k358k7t	19	20	nm	nm	NOUN
m039k358k7t	19	21	length	length	NOUN
m039k358k7t	19	22	by	by	ADP
m039k358k7t	19	23	gold	gold	ADJ
m039k358k7t	19	24	droplet	droplet	ADJ
m039k358k7t	19	25	nucleation	nucleation	NOUN
m039k358k7t	19	26	.	.	PUNCT
m039k358k7t	20	1	the	the	DET
m039k358k7t	20	2	gaas	gaas	NOUN
m039k358k7t	20	3	nanowires	nanowire	NOUN
m039k358k7t	20	4	are	be	AUX
m039k358k7t	20	5	then	then	ADV
m039k358k7t	20	6	coated	coat	VERB
m039k358k7t	20	7	by	by	ADP
m039k358k7t	20	8	fe	fe	PROPN
m039k358k7t	20	9	(	(	PUNCT
m039k358k7t	20	10	to	to	PART
m039k358k7t	20	11	form	form	VERB
m039k358k7t	20	12	in	in	ADP
m039k358k7t	20	13	effect	effect	NOUN
m039k358k7t	20	14	fe	fe	X
m039k358k7t	20	15	tubes	tube	NOUN
m039k358k7t	20	16	)	)	PUNCT
m039k358k7t	20	17	,	,	PUNCT
m039k358k7t	20	18	and	and	CCONJ
m039k358k7t	20	19	again	again	ADV
m039k358k7t	20	20	by	by	ADP
m039k358k7t	20	21	au	au	X
m039k358k7t	20	22	to	to	PART
m039k358k7t	20	23	protect	protect	VERB
m039k358k7t	20	24	them	they	PRON
m039k358k7t	20	25	from	from	ADP
m039k358k7t	20	26	oxidation	oxidation	NOUN
m039k358k7t	20	27	after	after	ADP
m039k358k7t	20	28	removal	removal	NOUN
m039k358k7t	20	29	from	from	ADP
m039k358k7t	20	30	the	the	DET
m039k358k7t	20	31	mbe	mbe	PROPN
m039k358k7t	20	32	chamber	chamber	PROPN
m039k358k7t	20	33	.	.	PUNCT
m039k358k7t	21	1	magnetic	magnetic	ADJ
m039k358k7t	21	2	studies	study	NOUN
m039k358k7t	21	3	by	by	ADP
m039k358k7t	21	4	squid	squid	NOUN
m039k358k7t	21	5	and	and	CCONJ
m039k358k7t	21	6	by	by	ADP
m039k358k7t	21	7	fmr	fmr	NOUN
m039k358k7t	21	8	show	show	NOUN
m039k358k7t	21	9	that	that	SCONJ
m039k358k7t	21	10	the	the	DET
m039k358k7t	21	11	resulting	result	VERB
m039k358k7t	21	12	nanowires	nanowire	NOUN
m039k358k7t	21	13	are	be	AUX
m039k358k7t	21	14	magnetically	magnetically	ADV
m039k358k7t	21	15	highly	highly	ADV
m039k358k7t	21	16	anisotropic	anisotropic	NOUN
m039k358k7t	21	17	.	.	PUNCT
m039k358k7t	22	1	the	the	DET
m039k358k7t	22	2	fmr	fmr	NOUN
m039k358k7t	22	3	measurements	measurement	NOUN
m039k358k7t	22	4	further	far	ADV
m039k358k7t	22	5	reveal	reveal	VERB
m039k358k7t	22	6	that	that	SCONJ
m039k358k7t	22	7	the	the	DET
m039k358k7t	22	8	as	as	ADV
m039k358k7t	22	9	-	-	PUNCT
m039k358k7t	22	10	grown	grow	VERB
m039k358k7t	22	11	ensemble	ensemble	NOUN
m039k358k7t	22	12	of	of	ADP
m039k358k7t	22	13	such	such	ADJ
m039k358k7t	22	14	nanowires	nanowire	NOUN
m039k358k7t	22	15	can	can	AUX
m039k358k7t	22	16	be	be	AUX
m039k358k7t	22	17	described	describe	VERB
m039k358k7t	22	18	by	by	ADP
m039k358k7t	22	19	an	an	DET
m039k358k7t	22	20	entirely	entirely	ADV
m039k358k7t	22	21	new	new	ADJ
m039k358k7t	22	22	demagnetizing	demagnetizing	NOUN
m039k358k7t	22	23	factor	factor	NOUN
m039k358k7t	22	24	,	,	PUNCT
m039k358k7t	22	25	not	not	PART
m039k358k7t	22	26	previously	previously	ADV
m039k358k7t	22	27	known	know	VERB
m039k358k7t	22	28	.	.	PUNCT