id	sid	tid	token	lemma	pos
ks65h99339z	1	1	there	there	PRON
ks65h99339z	1	2	has	have	AUX
ks65h99339z	1	3	been	be	AUX
ks65h99339z	1	4	much	much	ADJ
ks65h99339z	1	5	interest	interest	NOUN
ks65h99339z	1	6	in	in	ADP
ks65h99339z	1	7	the	the	DET
ks65h99339z	1	8	study	study	NOUN
ks65h99339z	1	9	of	of	ADP
ks65h99339z	1	10	topological	topological	ADJ
ks65h99339z	1	11	insulators	insulator	NOUN
ks65h99339z	1	12	(	(	PUNCT
ks65h99339z	1	13	ti	ti	PROPN
ks65h99339z	1	14	)	)	PUNCT
ks65h99339z	1	15	recently	recently	ADV
ks65h99339z	1	16	.	.	PUNCT
ks65h99339z	2	1	due	due	ADP
ks65h99339z	2	2	to	to	ADP
ks65h99339z	2	3	their	their	PRON
ks65h99339z	2	4	unique	unique	ADJ
ks65h99339z	2	5	electronic	electronic	ADJ
ks65h99339z	2	6	structure	structure	NOUN
ks65h99339z	2	7	,	,	PUNCT
ks65h99339z	2	8	these	these	DET
ks65h99339z	2	9	new	new	ADJ
ks65h99339z	2	10	materials	material	NOUN
ks65h99339z	2	11	have	have	AUX
ks65h99339z	2	12	been	be	AUX
ks65h99339z	2	13	an	an	DET
ks65h99339z	2	14	active	active	ADJ
ks65h99339z	2	15	area	area	NOUN
ks65h99339z	2	16	of	of	ADP
ks65h99339z	2	17	research	research	NOUN
ks65h99339z	2	18	to	to	PART
ks65h99339z	2	19	discover	discover	VERB
ks65h99339z	2	20	new	new	ADJ
ks65h99339z	2	21	quantum	quantum	NOUN
ks65h99339z	2	22	phenomena	phenomenon	NOUN
ks65h99339z	2	23	and	and	CCONJ
ks65h99339z	2	24	their	their	PRON
ks65h99339z	2	25	application	application	NOUN
ks65h99339z	2	26	in	in	ADP
ks65h99339z	2	27	new	new	ADJ
ks65h99339z	2	28	technologies	technology	NOUN
ks65h99339z	2	29	.	.	PUNCT
ks65h99339z	3	1	unlike	unlike	ADP
ks65h99339z	3	2	the	the	DET
ks65h99339z	3	3	electronic	electronic	ADJ
ks65h99339z	3	4	structure	structure	NOUN
ks65h99339z	3	5	observed	observe	VERB
ks65h99339z	3	6	in	in	ADP
ks65h99339z	3	7	traditional	traditional	ADJ
ks65h99339z	3	8	semiconductors	semiconductor	NOUN
ks65h99339z	3	9	,	,	PUNCT
ks65h99339z	3	10	the	the	DET
ks65h99339z	3	11	strong	strong	ADJ
ks65h99339z	3	12	spin	spin	NOUN
ks65h99339z	3	13	-	-	PUNCT
ks65h99339z	3	14	orbit	orbit	NOUN
ks65h99339z	3	15	coupling	coupling	NOUN
ks65h99339z	3	16	induces	induce	VERB
ks65h99339z	3	17	a	a	DET
ks65h99339z	3	18	band	band	NOUN
ks65h99339z	3	19	inversion	inversion	NOUN
ks65h99339z	3	20	in	in	ADP
ks65h99339z	3	21	the	the	DET
ks65h99339z	3	22	electronic	electronic	ADJ
ks65h99339z	3	23	structure	structure	NOUN
ks65h99339z	3	24	of	of	ADP
ks65h99339z	3	25	tis	tis	PRON
ks65h99339z	3	26	.	.	PUNCT
ks65h99339z	4	1	one	one	NUM
ks65h99339z	4	2	of	of	ADP
ks65h99339z	4	3	the	the	DET
ks65h99339z	4	4	side	side	NOUN
ks65h99339z	4	5	effects	effect	NOUN
ks65h99339z	4	6	of	of	ADP
ks65h99339z	4	7	this	this	DET
ks65h99339z	4	8	band	band	NOUN
ks65h99339z	4	9	inversion	inversion	NOUN
ks65h99339z	4	10	is	be	AUX
ks65h99339z	4	11	creating	create	VERB
ks65h99339z	4	12	metallic	metallic	ADJ
ks65h99339z	4	13	-	-	PUNCT
ks65h99339z	4	14	like	like	ADJ
ks65h99339z	4	15	surface	surface	NOUN
ks65h99339z	4	16	states	state	NOUN
ks65h99339z	4	17	at	at	ADP
ks65h99339z	4	18	the	the	DET
ks65h99339z	4	19	material	material	NOUN
ks65h99339z	4	20	's	's	PART
ks65h99339z	4	21	surface	surface	NOUN
ks65h99339z	4	22	that	that	PRON
ks65h99339z	4	23	are	be	AUX
ks65h99339z	4	24	protected	protect	VERB
ks65h99339z	4	25	by	by	ADP
ks65h99339z	4	26	time	time	NOUN
ks65h99339z	4	27	invariance	invariance	NOUN
ks65h99339z	4	28	and	and	CCONJ
ks65h99339z	4	29	whose	whose	DET
ks65h99339z	4	30	spin	spin	NOUN
ks65h99339z	4	31	angular	angular	ADJ
ks65h99339z	4	32	momentum	momentum	NOUN
ks65h99339z	4	33	is	be	AUX
ks65h99339z	4	34	locked	lock	VERB
ks65h99339z	4	35	to	to	ADP
ks65h99339z	4	36	the	the	DET
ks65h99339z	4	37	direction	direction	NOUN
ks65h99339z	4	38	of	of	ADP
ks65h99339z	4	39	the	the	DET
ks65h99339z	4	40	momentum	momentum	NOUN
ks65h99339z	4	41	of	of	ADP
ks65h99339z	4	42	the	the	DET
ks65h99339z	4	43	electron.these	electron.these	ADJ
ks65h99339z	4	44	surface	surface	NOUN
ks65h99339z	4	45	states	state	NOUN
ks65h99339z	4	46	are	be	AUX
ks65h99339z	4	47	essentially	essentially	ADV
ks65h99339z	4	48	resistant	resistant	ADJ
ks65h99339z	4	49	to	to	ADP
ks65h99339z	4	50	scattering	scatter	VERB
ks65h99339z	4	51	events	event	NOUN
ks65h99339z	4	52	that	that	PRON
ks65h99339z	4	53	otherwise	otherwise	ADV
ks65h99339z	4	54	affect	affect	VERB
ks65h99339z	4	55	other	other	ADJ
ks65h99339z	4	56	materials	material	NOUN
ks65h99339z	4	57	.	.	PUNCT
ks65h99339z	5	1	leveraging	leverage	VERB
ks65h99339z	5	2	the	the	DET
ks65h99339z	5	3	characteristic	characteristic	ADJ
ks65h99339z	5	4	scattering	scatter	VERB
ks65h99339z	5	5	resistance	resistance	NOUN
ks65h99339z	5	6	,	,	PUNCT
ks65h99339z	5	7	the	the	DET
ks65h99339z	5	8	spin	spin	NOUN
ks65h99339z	5	9	-	-	PUNCT
ks65h99339z	5	10	momentum	momentum	NOUN
ks65h99339z	5	11	locking	locking	NOUN
ks65h99339z	5	12	of	of	ADP
ks65h99339z	5	13	the	the	DET
ks65h99339z	5	14	surface	surface	NOUN
ks65h99339z	5	15	states	state	NOUN
ks65h99339z	5	16	,	,	PUNCT
ks65h99339z	5	17	and	and	CCONJ
ks65h99339z	5	18	the	the	DET
ks65h99339z	5	19	dirac	dirac	PROPN
ks65h99339z	5	20	cone	cone	NOUN
ks65h99339z	5	21	structure	structure	NOUN
ks65h99339z	5	22	,	,	PUNCT
ks65h99339z	5	23	a	a	DET
ks65h99339z	5	24	spin	spin	NOUN
ks65h99339z	5	25	-	-	PUNCT
ks65h99339z	5	26	resonant	resonant	NOUN
ks65h99339z	5	27	tunneling	tunneling	NOUN
ks65h99339z	5	28	diode	diode	NOUN
ks65h99339z	5	29	using	use	VERB
ks65h99339z	5	30	topological	topological	ADJ
ks65h99339z	5	31	insulators	insulator	NOUN
ks65h99339z	5	32	has	have	AUX
ks65h99339z	5	33	been	be	AUX
ks65h99339z	5	34	investigated	investigate	VERB
ks65h99339z	5	35	to	to	PART
ks65h99339z	5	36	implement	implement	VERB
ks65h99339z	5	37	a	a	DET
ks65h99339z	5	38	negative	negative	ADJ
ks65h99339z	5	39	differential	differential	ADJ
ks65h99339z	5	40	resistance	resistance	NOUN
ks65h99339z	5	41	device	device	NOUN
ks65h99339z	5	42	.	.	PUNCT
ks65h99339z	6	1	utilizing	utilize	VERB
ks65h99339z	6	2	the	the	DET
ks65h99339z	6	3	spin	spin	NOUN
ks65h99339z	6	4	texture	texture	NOUN
ks65h99339z	6	5	of	of	ADP
ks65h99339z	6	6	the	the	DET
ks65h99339z	6	7	surface	surface	NOUN
ks65h99339z	6	8	states	state	NOUN
ks65h99339z	6	9	,	,	PUNCT
ks65h99339z	6	10	an	an	DET
ks65h99339z	6	11	additional	additional	ADJ
ks65h99339z	6	12	spin	spin	NOUN
ks65h99339z	6	13	-	-	PUNCT
ks65h99339z	6	14	filter	filter	NOUN
ks65h99339z	6	15	can	can	AUX
ks65h99339z	6	16	help	help	VERB
ks65h99339z	6	17	to	to	PART
ks65h99339z	6	18	suppress	suppress	VERB
ks65h99339z	6	19	the	the	DET
ks65h99339z	6	20	valley	valley	NOUN
ks65h99339z	6	21	current	current	NOUN
ks65h99339z	6	22	in	in	ADP
ks65h99339z	6	23	a	a	DET
ks65h99339z	6	24	negative	negative	ADJ
ks65h99339z	6	25	differential	differential	ADJ
ks65h99339z	6	26	resistance	resistance	NOUN
ks65h99339z	6	27	device	device	NOUN
ks65h99339z	6	28	.	.	PUNCT
ks65h99339z	7	1	in	in	ADP
ks65h99339z	7	2	the	the	DET
ks65h99339z	7	3	spin	spin	NOUN
ks65h99339z	7	4	-	-	PUNCT
ks65h99339z	7	5	resonant	resonant	NOUN
ks65h99339z	7	6	tunneling	tunneling	NOUN
ks65h99339z	7	7	diode	diode	NOUN
ks65h99339z	7	8	,	,	PUNCT
ks65h99339z	7	9	the	the	DET
ks65h99339z	7	10	tunneling	tunneling	NOUN
ks65h99339z	7	11	process	process	NOUN
ks65h99339z	7	12	would	would	AUX
ks65h99339z	7	13	also	also	ADV
ks65h99339z	7	14	benefit	benefit	VERB
ks65h99339z	7	15	from	from	ADP
ks65h99339z	7	16	having	have	VERB
ks65h99339z	7	17	protection	protection	NOUN
ks65h99339z	7	18	from	from	ADP
ks65h99339z	7	19	conventional	conventional	ADJ
ks65h99339z	7	20	scattering	scattering	NOUN
ks65h99339z	7	21	processes	process	NOUN
ks65h99339z	7	22	due	due	ADJ
ks65h99339z	7	23	to	to	ADP
ks65h99339z	7	24	defects	defect	NOUN
ks65h99339z	7	25	and	and	CCONJ
ks65h99339z	7	26	thickness	thickness	NOUN
ks65h99339z	7	27	or	or	CCONJ
ks65h99339z	7	28	line	line	NOUN
ks65h99339z	7	29	edge	edge	NOUN
ks65h99339z	7	30	roughness.this	roughness.this	DET
ks65h99339z	7	31	research	research	NOUN
ks65h99339z	7	32	is	be	AUX
ks65h99339z	7	33	focused	focus	VERB
ks65h99339z	7	34	on	on	ADP
ks65h99339z	7	35	the	the	DET
ks65h99339z	7	36	manufacturing	manufacturing	NOUN
ks65h99339z	7	37	of	of	ADP
ks65h99339z	7	38	a	a	DET
ks65h99339z	7	39	spin	spin	NOUN
ks65h99339z	7	40	-	-	PUNCT
ks65h99339z	7	41	filtered	filter	VERB
ks65h99339z	7	42	tunnel	tunnel	NOUN
ks65h99339z	7	43	diode	diode	NOUN
ks65h99339z	7	44	.	.	PUNCT
ks65h99339z	8	1	using	use	VERB
ks65h99339z	8	2	molecular	molecular	ADJ
ks65h99339z	8	3	beam	beam	NOUN
ks65h99339z	8	4	epitaxy	epitaxy	PROPN
ks65h99339z	8	5	to	to	PART
ks65h99339z	8	6	grow	grow	VERB
ks65h99339z	8	7	a	a	DET
ks65h99339z	8	8	three	three	NUM
ks65h99339z	8	9	-	-	PUNCT
ks65h99339z	8	10	layer	layer	NOUN
ks65h99339z	8	11	heterostructure	heterostructure	NOUN
ks65h99339z	8	12	,	,	PUNCT
ks65h99339z	8	13	with	with	ADP
ks65h99339z	8	14	two	two	NUM
ks65h99339z	8	15	layers	layer	NOUN
ks65h99339z	8	16	of	of	ADP
ks65h99339z	8	17	bismuth	bismuth	NOUN
ks65h99339z	8	18	selenide	selenide	NOUN
ks65h99339z	8	19	as	as	ADP
ks65h99339z	8	20	the	the	DET
ks65h99339z	8	21	topological	topological	ADJ
ks65h99339z	8	22	insulator	insulator	NOUN
ks65h99339z	8	23	separated	separate	VERB
ks65h99339z	8	24	by	by	ADP
ks65h99339z	8	25	a	a	DET
ks65h99339z	8	26	thin	thin	ADJ
ks65h99339z	8	27	layer	layer	NOUN
ks65h99339z	8	28	of	of	ADP
ks65h99339z	8	29	tungsten	tungsten	ADJ
ks65h99339z	8	30	diselenide	diselenide	NOUN
ks65h99339z	8	31	as	as	ADP
ks65h99339z	8	32	a	a	DET
ks65h99339z	8	33	tunnel	tunnel	NOUN
ks65h99339z	8	34	barrier	barrier	NOUN
ks65h99339z	8	35	.	.	PUNCT
ks65h99339z	9	1	the	the	DET
ks65h99339z	9	2	alignment	alignment	NOUN
ks65h99339z	9	3	of	of	ADP
ks65h99339z	9	4	the	the	DET
ks65h99339z	9	5	fermi	fermi	NOUN
ks65h99339z	9	6	levels	level	NOUN
ks65h99339z	9	7	of	of	ADP
ks65h99339z	9	8	the	the	DET
ks65h99339z	9	9	topological	topological	ADJ
ks65h99339z	9	10	insulator	insulator	NOUN
ks65h99339z	9	11	layers	layer	NOUN
ks65h99339z	9	12	and	and	CCONJ
ks65h99339z	9	13	the	the	DET
ks65h99339z	9	14	thickness	thickness	NOUN
ks65h99339z	9	15	of	of	ADP
ks65h99339z	9	16	the	the	DET
ks65h99339z	9	17	tunnel	tunnel	NOUN
ks65h99339z	9	18	barrier	barrier	NOUN
ks65h99339z	9	19	were	be	AUX
ks65h99339z	9	20	investigated	investigate	VERB
ks65h99339z	9	21	using	use	VERB
ks65h99339z	9	22	x	x	NOUN
ks65h99339z	9	23	-	-	NOUN
ks65h99339z	9	24	ray	ray	NOUN
ks65h99339z	9	25	photoelectron	photoelectron	NOUN
ks65h99339z	9	26	spectroscopy	spectroscopy	NOUN
ks65h99339z	9	27	.	.	PUNCT
ks65h99339z	10	1	the	the	DET
ks65h99339z	10	2	fabrication	fabrication	NOUN
ks65h99339z	10	3	and	and	CCONJ
ks65h99339z	10	4	initial	initial	ADJ
ks65h99339z	10	5	electrical	electrical	ADJ
ks65h99339z	10	6	measurements	measurement	NOUN
ks65h99339z	10	7	of	of	ADP
ks65h99339z	10	8	the	the	DET
ks65h99339z	10	9	spin	spin	NOUN
ks65h99339z	10	10	-	-	PUNCT
ks65h99339z	10	11	filtered	filter	VERB
ks65h99339z	10	12	tunnel	tunnel	NOUN
ks65h99339z	10	13	diode	diode	NOUN
ks65h99339z	10	14	were	be	AUX
ks65h99339z	10	15	also	also	ADV
ks65h99339z	10	16	investigated	investigate	VERB
ks65h99339z	10	17	.	.	PUNCT