id	sid	tid	token	lemma	pos
kd17cr58x8g	1	1	both	both	PRON
kd17cr58x8g	1	2	molecular	molecular	ADJ
kd17cr58x8g	1	3	beam	beam	NOUN
kd17cr58x8g	1	4	epitaxy	epitaxy	PROPN
kd17cr58x8g	1	5	(	(	PUNCT
kd17cr58x8g	1	6	mbe	mbe	PROPN
kd17cr58x8g	1	7	)	)	PUNCT
kd17cr58x8g	1	8	and	and	CCONJ
kd17cr58x8g	1	9	metal	metal	NOUN
kd17cr58x8g	1	10	organic	organic	ADJ
kd17cr58x8g	1	11	chemical	chemical	NOUN
kd17cr58x8g	1	12	vapor	vapor	NOUN
kd17cr58x8g	1	13	deposition	deposition	NOUN
kd17cr58x8g	1	14	(	(	PUNCT
kd17cr58x8g	1	15	mocvd	mocvd	PROPN
kd17cr58x8g	1	16	)	)	PUNCT
kd17cr58x8g	1	17	have	have	AUX
kd17cr58x8g	1	18	been	be	AUX
kd17cr58x8g	1	19	used	use	VERB
kd17cr58x8g	1	20	to	to	PART
kd17cr58x8g	1	21	explore	explore	VERB
kd17cr58x8g	1	22	the	the	DET
kd17cr58x8g	1	23	growth	growth	NOUN
kd17cr58x8g	1	24	of	of	ADP
kd17cr58x8g	1	25	inas	inas	PROPN
kd17cr58x8g	1	26	on	on	ADP
kd17cr58x8g	1	27	si	si	PROPN
kd17cr58x8g	1	28	.	.	PUNCT
kd17cr58x8g	2	1	despite	despite	SCONJ
kd17cr58x8g	2	2	11.6	11.6	NUM
kd17cr58x8g	2	3	%	%	NOUN
kd17cr58x8g	2	4	lattice	lattice	NOUN
kd17cr58x8g	2	5	mismatch	mismatch	NOUN
kd17cr58x8g	2	6	,	,	PUNCT
kd17cr58x8g	2	7	planar	planar	ADJ
kd17cr58x8g	2	8	inas	inas	PROPN
kd17cr58x8g	2	9	structures	structure	NOUN
kd17cr58x8g	2	10	have	have	AUX
kd17cr58x8g	2	11	been	be	AUX
kd17cr58x8g	2	12	observed	observe	VERB
kd17cr58x8g	2	13	by	by	ADP
kd17cr58x8g	2	14	scanning	scan	VERB
kd17cr58x8g	2	15	electron	electron	NOUN
kd17cr58x8g	2	16	microscopy	microscopy	NOUN
kd17cr58x8g	2	17	(	(	PUNCT
kd17cr58x8g	2	18	sem	sem	PROPN
kd17cr58x8g	2	19	)	)	PUNCT
kd17cr58x8g	2	20	when	when	SCONJ
kd17cr58x8g	2	21	nucleating	nucleate	VERB
kd17cr58x8g	2	22	using	use	VERB
kd17cr58x8g	2	23	mbe	mbe	PROPN
kd17cr58x8g	2	24	on	on	ADP
kd17cr58x8g	2	25	patterned	patterned	ADJ
kd17cr58x8g	2	26	submicron	submicron	NOUN
kd17cr58x8g	2	27	si	si	PROPN
kd17cr58x8g	2	28	-	-	PUNCT
kd17cr58x8g	2	29	on	on	ADP
kd17cr58x8g	2	30	-	-	PUNCT
kd17cr58x8g	2	31	insulator	insulator	NOUN
kd17cr58x8g	2	32	(	(	PUNCT
kd17cr58x8g	2	33	soi	soi	PROPN
kd17cr58x8g	2	34	)	)	PUNCT
kd17cr58x8g	2	35	islands	island	NOUN
kd17cr58x8g	2	36	.	.	PUNCT
kd17cr58x8g	3	1	planar	planar	ADJ
kd17cr58x8g	3	2	structures	structure	NOUN
kd17cr58x8g	3	3	of	of	ADP
kd17cr58x8g	3	4	size	size	NOUN
kd17cr58x8g	3	5	as	as	ADV
kd17cr58x8g	3	6	large	large	ADJ
kd17cr58x8g	3	7	as	as	ADP
kd17cr58x8g	3	8	500	500	NUM
kd17cr58x8g	3	9	ìä	ìä	NOUN
kd17cr58x8g	3	10	'	'	NUM
kd17cr58x8g	3	11	500	500	NUM
kd17cr58x8g	3	12	nm2	nm2	NOUN
kd17cr58x8g	3	13	and	and	CCONJ
kd17cr58x8g	3	14	lines	line	NOUN
kd17cr58x8g	3	15	of	of	ADP
kd17cr58x8g	3	16	width	width	NOUN
kd17cr58x8g	3	17	200	200	NUM
kd17cr58x8g	3	18	nm	nm	NOUN
kd17cr58x8g	3	19	and	and	CCONJ
kd17cr58x8g	3	20	length	length	NOUN
kd17cr58x8g	3	21	a	a	DET
kd17cr58x8g	3	22	few	few	ADJ
kd17cr58x8g	3	23	microns	micron	NOUN
kd17cr58x8g	3	24	have	have	AUX
kd17cr58x8g	3	25	been	be	AUX
kd17cr58x8g	3	26	observed	observe	VERB
kd17cr58x8g	3	27	.	.	PUNCT
kd17cr58x8g	4	1	mocvd	mocvd	PROPN
kd17cr58x8g	4	2	growth	growth	PROPN
kd17cr58x8g	4	3	of	of	ADP
kd17cr58x8g	4	4	inas	inas	PROPN
kd17cr58x8g	4	5	also	also	ADV
kd17cr58x8g	4	6	generates	generate	VERB
kd17cr58x8g	4	7	single	single	ADJ
kd17cr58x8g	4	8	grain	grain	NOUN
kd17cr58x8g	4	9	structures	structure	NOUN
kd17cr58x8g	4	10	on	on	ADP
kd17cr58x8g	4	11	si	si	PROPN
kd17cr58x8g	4	12	islands	islands	PROPN
kd17cr58x8g	4	13	when	when	SCONJ
kd17cr58x8g	4	14	the	the	DET
kd17cr58x8g	4	15	size	size	NOUN
kd17cr58x8g	4	16	is	be	AUX
kd17cr58x8g	4	17	reduced	reduce	VERB
kd17cr58x8g	4	18	to	to	ADP
kd17cr58x8g	4	19	100	100	NUM
kd17cr58x8g	4	20	ìä	ìä	NOUN
kd17cr58x8g	4	21	'	'	NUM
kd17cr58x8g	4	22	100	100	NUM
kd17cr58x8g	4	23	nm2	nm2	NOUN
kd17cr58x8g	4	24	.	.	PUNCT
kd17cr58x8g	5	1	by	by	ADP
kd17cr58x8g	5	2	choosing	choose	VERB
kd17cr58x8g	5	3	soi	soi	NOUN
kd17cr58x8g	5	4	as	as	ADP
kd17cr58x8g	5	5	the	the	DET
kd17cr58x8g	5	6	growth	growth	NOUN
kd17cr58x8g	5	7	template	template	NOUN
kd17cr58x8g	5	8	,	,	PUNCT
kd17cr58x8g	5	9	selective	selective	ADJ
kd17cr58x8g	5	10	growth	growth	NOUN
kd17cr58x8g	5	11	is	be	AUX
kd17cr58x8g	5	12	enabled	enable	VERB
kd17cr58x8g	5	13	by	by	ADP
kd17cr58x8g	5	14	mocvd	mocvd	PROPN
kd17cr58x8g	5	15	.	.	PUNCT
kd17cr58x8g	6	1	post	post	ADJ
kd17cr58x8g	6	2	-	-	ADJ
kd17cr58x8g	6	3	growth	growth	ADJ
kd17cr58x8g	6	4	pattern	pattern	NOUN
kd17cr58x8g	6	5	-	-	PUNCT
kd17cr58x8g	6	6	then	then	ADV
kd17cr58x8g	6	7	-	-	PUNCT
kd17cr58x8g	6	8	anneal	anneal	ADJ
kd17cr58x8g	6	9	process	process	NOUN
kd17cr58x8g	6	10	,	,	PUNCT
kd17cr58x8g	6	11	in	in	ADP
kd17cr58x8g	6	12	which	which	PRON
kd17cr58x8g	6	13	mocvd	mocvd	PROPN
kd17cr58x8g	6	14	inas	inas	PROPN
kd17cr58x8g	6	15	is	be	AUX
kd17cr58x8g	6	16	deposited	deposit	VERB
kd17cr58x8g	6	17	onto	onto	ADP
kd17cr58x8g	6	18	unpatterned	unpatterned	ADJ
kd17cr58x8g	6	19	soi	soi	PROPN
kd17cr58x8g	6	20	followed	follow	VERB
kd17cr58x8g	6	21	with	with	ADP
kd17cr58x8g	6	22	patterning	patterning	NOUN
kd17cr58x8g	6	23	and	and	CCONJ
kd17cr58x8g	6	24	annealing	annealing	NOUN
kd17cr58x8g	6	25	of	of	ADP
kd17cr58x8g	6	26	inas	inas	PROPN
kd17cr58x8g	6	27	-	-	PUNCT
kd17cr58x8g	6	28	on	on	ADP
kd17cr58x8g	6	29	-	-	PUNCT
kd17cr58x8g	6	30	si	si	NOUN
kd17cr58x8g	6	31	structure	structure	NOUN
kd17cr58x8g	6	32	,	,	PUNCT
kd17cr58x8g	6	33	is	be	AUX
kd17cr58x8g	6	34	found	find	VERB
kd17cr58x8g	6	35	to	to	PART
kd17cr58x8g	6	36	change	change	VERB
kd17cr58x8g	6	37	the	the	DET
kd17cr58x8g	6	38	relative	relative	ADJ
kd17cr58x8g	6	39	lattice	lattice	NOUN
kd17cr58x8g	6	40	parameters	parameter	NOUN
kd17cr58x8g	6	41	of	of	ADP
kd17cr58x8g	6	42	encapsulated	encapsulate	VERB
kd17cr58x8g	6	43	17/5	17/5	NUM
kd17cr58x8g	6	44	nm	nm	NOUN
kd17cr58x8g	6	45	inas	inas	PROPN
kd17cr58x8g	6	46	/	/	SYM
kd17cr58x8g	6	47	si	si	PROPN
kd17cr58x8g	6	48	island	island	PROPN
kd17cr58x8g	6	49	.	.	PUNCT
kd17cr58x8g	7	1	observed	observe	VERB
kd17cr58x8g	7	2	from	from	ADP
kd17cr58x8g	7	3	transmission	transmission	NOUN
kd17cr58x8g	7	4	electron	electron	NOUN
kd17cr58x8g	7	5	diffraction	diffraction	NOUN
kd17cr58x8g	7	6	(	(	PUNCT
kd17cr58x8g	7	7	ted	ted	PROPN
kd17cr58x8g	7	8	)	)	PUNCT
kd17cr58x8g	7	9	patterns	pattern	NOUN
kd17cr58x8g	7	10	,	,	PUNCT
kd17cr58x8g	7	11	the	the	DET
kd17cr58x8g	7	12	lattice	lattice	NOUN
kd17cr58x8g	7	13	mismatch	mismatch	NOUN
kd17cr58x8g	7	14	of	of	ADP
kd17cr58x8g	7	15	17/5	17/5	NUM
kd17cr58x8g	7	16	nm	nm	NOUN
kd17cr58x8g	7	17	inas	inas	PROPN
kd17cr58x8g	7	18	/	/	SYM
kd17cr58x8g	7	19	si	si	PROPN
kd17cr58x8g	7	20	island	island	PROPN
kd17cr58x8g	7	21	reduces	reduce	VERB
kd17cr58x8g	7	22	from	from	ADP
kd17cr58x8g	7	23	11.2	11.2	NUM
kd17cr58x8g	7	24	to	to	PART
kd17cr58x8g	7	25	4.2	4.2	NUM
kd17cr58x8g	7	26	%	%	NOUN
kd17cr58x8g	7	27	after	after	ADP
kd17cr58x8g	7	28	being	be	AUX
kd17cr58x8g	7	29	annealed	anneal	VERB
kd17cr58x8g	7	30	at	at	ADP
kd17cr58x8g	7	31	800	800	NUM
kd17cr58x8g	7	32	ìâå¡c	ìâå¡c	NUM
kd17cr58x8g	7	33	for	for	ADP
kd17cr58x8g	7	34	30	30	NUM
kd17cr58x8g	7	35	minutes	minute	NOUN
kd17cr58x8g	7	36	.	.	PUNCT
kd17cr58x8g	8	1	high	high	ADJ
kd17cr58x8g	8	2	-	-	PUNCT
kd17cr58x8g	8	3	k	k	PROPN
kd17cr58x8g	8	4	al2o3	al2o3	NOUN
kd17cr58x8g	8	5	dielectrics	dielectric	NOUN
kd17cr58x8g	8	6	have	have	AUX
kd17cr58x8g	8	7	been	be	AUX
kd17cr58x8g	8	8	deposited	deposit	VERB
kd17cr58x8g	8	9	by	by	ADP
kd17cr58x8g	8	10	both	both	DET
kd17cr58x8g	8	11	electron	electron	NOUN
kd17cr58x8g	8	12	-	-	PUNCT
kd17cr58x8g	8	13	beam	beam	NOUN
kd17cr58x8g	8	14	-	-	PUNCT
kd17cr58x8g	8	15	enabled	enable	VERB
kd17cr58x8g	8	16	physical	physical	ADJ
kd17cr58x8g	8	17	vapor	vapor	NOUN
kd17cr58x8g	8	18	deposition	deposition	NOUN
kd17cr58x8g	8	19	(	(	PUNCT
kd17cr58x8g	8	20	pvd	pvd	PROPN
kd17cr58x8g	8	21	)	)	PUNCT
kd17cr58x8g	8	22	and	and	CCONJ
kd17cr58x8g	8	23	atomic	atomic	ADJ
kd17cr58x8g	8	24	layer	layer	NOUN
kd17cr58x8g	8	25	deposition	deposition	NOUN
kd17cr58x8g	8	26	(	(	PUNCT
kd17cr58x8g	8	27	ald	ald	PROPN
kd17cr58x8g	8	28	)	)	PUNCT
kd17cr58x8g	8	29	.	.	PUNCT
kd17cr58x8g	9	1	films	film	NOUN
kd17cr58x8g	9	2	from	from	ADP
kd17cr58x8g	9	3	both	both	DET
kd17cr58x8g	9	4	techniques	technique	NOUN
kd17cr58x8g	9	5	show	show	VERB
kd17cr58x8g	9	6	leakage	leakage	NOUN
kd17cr58x8g	9	7	currents	current	NOUN
kd17cr58x8g	9	8	on	on	ADP
kd17cr58x8g	9	9	the	the	DET
kd17cr58x8g	9	10	order	order	NOUN
kd17cr58x8g	9	11	of	of	ADP
kd17cr58x8g	9	12	10	10	NUM
kd17cr58x8g	9	13	-	-	SYM
kd17cr58x8g	9	14	9a	9a	NUM
kd17cr58x8g	9	15	/	/	SYM
kd17cr58x8g	9	16	cm2	cm2	PROPN
kd17cr58x8g	9	17	,	,	PUNCT
kd17cr58x8g	9	18	at	at	ADP
kd17cr58x8g	9	19	~1	~1	NUM
kd17cr58x8g	9	20	mv	mv	PROPN
kd17cr58x8g	9	21	/	/	SYM
kd17cr58x8g	9	22	cm	cm	PROPN
kd17cr58x8g	9	23	electric	electric	ADJ
kd17cr58x8g	9	24	field	field	NOUN
kd17cr58x8g	9	25	,	,	PUNCT
kd17cr58x8g	9	26	breakdown	breakdown	NOUN
kd17cr58x8g	9	27	field	field	NOUN
kd17cr58x8g	9	28	>	>	X
kd17cr58x8g	9	29	~6	~6	NUM
kd17cr58x8g	9	30	mv	mv	PROPN
kd17cr58x8g	9	31	/	/	SYM
kd17cr58x8g	9	32	cm	cm	PROPN
kd17cr58x8g	9	33	,	,	PUNCT
kd17cr58x8g	9	34	and	and	CCONJ
kd17cr58x8g	9	35	dielectric	dielectric	ADJ
kd17cr58x8g	9	36	constant	constant	ADJ
kd17cr58x8g	9	37	>	>	X
kd17cr58x8g	9	38	6	6	NUM
kd17cr58x8g	9	39	,	,	PUNCT
kd17cr58x8g	9	40	comparable	comparable	ADJ
kd17cr58x8g	9	41	to	to	ADP
kd17cr58x8g	9	42	those	those	PRON
kd17cr58x8g	9	43	of	of	ADP
kd17cr58x8g	9	44	reported	report	VERB
kd17cr58x8g	9	45	ald	ald	PROPN
kd17cr58x8g	9	46	prior	prior	PROPN
kd17cr58x8g	9	47	arts	art	NOUN
kd17cr58x8g	9	48	by	by	ADP
kd17cr58x8g	9	49	groner	groner	NOUN
kd17cr58x8g	9	50	.	.	PUNCT
kd17cr58x8g	10	1	the	the	DET
kd17cr58x8g	10	2	first	first	ADJ
kd17cr58x8g	10	3	mosfets	mosfet	NOUN
kd17cr58x8g	10	4	with	with	ADP
kd17cr58x8g	10	5	extreme	extreme	ADJ
kd17cr58x8g	10	6	lattice	lattice	NOUN
kd17cr58x8g	10	7	mismatch	mismatch	NOUN
kd17cr58x8g	10	8	inas	inas	PROPN
kd17cr58x8g	10	9	-	-	PUNCT
kd17cr58x8g	10	10	on	on	ADP
kd17cr58x8g	10	11	-	-	PUNCT
kd17cr58x8g	10	12	soi	soi	NOUN
kd17cr58x8g	10	13	channels	channel	NOUN
kd17cr58x8g	10	14	using	use	VERB
kd17cr58x8g	10	15	pvd	pvd	PROPN
kd17cr58x8g	10	16	al2o3	al2o3	NOUN
kd17cr58x8g	10	17	as	as	SCONJ
kd17cr58x8g	10	18	the	the	DET
kd17cr58x8g	10	19	gate	gate	NOUN
kd17cr58x8g	10	20	dielectric	dielectric	NOUN
kd17cr58x8g	10	21	are	be	AUX
kd17cr58x8g	10	22	characterized	characterize	VERB
kd17cr58x8g	10	23	.	.	PUNCT
kd17cr58x8g	11	1	channel	channel	NOUN
kd17cr58x8g	11	2	recess	recess	NOUN
kd17cr58x8g	11	3	was	be	AUX
kd17cr58x8g	11	4	used	use	VERB
kd17cr58x8g	11	5	to	to	PART
kd17cr58x8g	11	6	improve	improve	VERB
kd17cr58x8g	11	7	the	the	DET
kd17cr58x8g	11	8	gate	gate	NOUN
kd17cr58x8g	11	9	control	control	NOUN
kd17cr58x8g	11	10	of	of	ADP
kd17cr58x8g	11	11	the	the	DET
kd17cr58x8g	11	12	drain	drain	NOUN
kd17cr58x8g	11	13	current	current	NOUN
kd17cr58x8g	11	14	.	.	PUNCT