id	sid	tid	token	lemma	pos
k930bv75n6f	1	1	this	this	DET
k930bv75n6f	1	2	thesis	thesis	NOUN
k930bv75n6f	1	3	presents	present	VERB
k930bv75n6f	1	4	work	work	NOUN
k930bv75n6f	1	5	on	on	ADP
k930bv75n6f	1	6	the	the	DET
k930bv75n6f	1	7	low	low	ADJ
k930bv75n6f	1	8	-	-	PUNCT
k930bv75n6f	1	9	frequency	frequency	NOUN
k930bv75n6f	1	10	noise	noise	NOUN
k930bv75n6f	1	11	characteristics	characteristic	NOUN
k930bv75n6f	1	12	of	of	ADP
k930bv75n6f	1	13	fet	fet	NOUN
k930bv75n6f	1	14	structures	structure	NOUN
k930bv75n6f	1	15	made	make	VERB
k930bv75n6f	1	16	from	from	ADP
k930bv75n6f	1	17	single	single	ADJ
k930bv75n6f	1	18	-	-	PUNCT
k930bv75n6f	1	19	layer	layer	NOUN
k930bv75n6f	1	20	graphene	graphene	NOUN
k930bv75n6f	1	21	.	.	PUNCT
k930bv75n6f	2	1	samples	sample	NOUN
k930bv75n6f	2	2	were	be	AUX
k930bv75n6f	2	3	created	create	VERB
k930bv75n6f	2	4	using	use	VERB
k930bv75n6f	2	5	standard	standard	ADJ
k930bv75n6f	2	6	e	e	NOUN
k930bv75n6f	2	7	-	-	NOUN
k930bv75n6f	2	8	beam	beam	ADJ
k930bv75n6f	2	9	lithography	lithography	NOUN
k930bv75n6f	2	10	and	and	CCONJ
k930bv75n6f	2	11	exfoliated	exfoliate	VERB
k930bv75n6f	2	12	,	,	PUNCT
k930bv75n6f	2	13	epitaxially	epitaxially	ADV
k930bv75n6f	2	14	-	-	PUNCT
k930bv75n6f	2	15	grown	grow	VERB
k930bv75n6f	2	16	,	,	PUNCT
k930bv75n6f	2	17	and	and	CCONJ
k930bv75n6f	2	18	cvd	cvd	NOUN
k930bv75n6f	2	19	-	-	PUNCT
k930bv75n6f	2	20	grown	grow	VERB
k930bv75n6f	2	21	graphene	graphene	NOUN
k930bv75n6f	2	22	films	film	NOUN
k930bv75n6f	2	23	.	.	PUNCT
k930bv75n6f	3	1	noise	noise	NOUN
k930bv75n6f	3	2	measurements	measurement	NOUN
k930bv75n6f	3	3	were	be	AUX
k930bv75n6f	3	4	made	make	VERB
k930bv75n6f	3	5	under	under	ADP
k930bv75n6f	3	6	vacuum	vacuum	NOUN
k930bv75n6f	3	7	at	at	ADP
k930bv75n6f	3	8	room	room	NOUN
k930bv75n6f	3	9	temperature	temperature	NOUN
k930bv75n6f	3	10	.	.	PUNCT
k930bv75n6f	4	1	the	the	DET
k930bv75n6f	4	2	lowest	low	ADJ
k930bv75n6f	4	3	overall	overall	ADJ
k930bv75n6f	4	4	noise	noise	NOUN
k930bv75n6f	4	5	was	be	AUX
k930bv75n6f	4	6	observed	observe	VERB
k930bv75n6f	4	7	in	in	ADP
k930bv75n6f	4	8	epitaxially	epitaxially	ADV
k930bv75n6f	4	9	-	-	PUNCT
k930bv75n6f	4	10	grown	grow	VERB
k930bv75n6f	4	11	films	film	NOUN
k930bv75n6f	4	12	on	on	ADP
k930bv75n6f	4	13	sic	sic	NOUN
k930bv75n6f	4	14	.	.	PUNCT
k930bv75n6f	5	1	we	we	PRON
k930bv75n6f	5	2	also	also	ADV
k930bv75n6f	5	3	investigated	investigate	VERB
k930bv75n6f	5	4	the	the	DET
k930bv75n6f	5	5	gate	gate	NOUN
k930bv75n6f	5	6	dependence	dependence	NOUN
k930bv75n6f	5	7	of	of	ADP
k930bv75n6f	5	8	the	the	DET
k930bv75n6f	5	9	noise	noise	NOUN
k930bv75n6f	5	10	amplitude	amplitude	NOUN
k930bv75n6f	5	11	.	.	PUNCT
k930bv75n6f	6	1	in	in	ADP
k930bv75n6f	6	2	our	our	PRON
k930bv75n6f	6	3	experiment	experiment	NOUN
k930bv75n6f	6	4	,	,	PUNCT
k930bv75n6f	6	5	a	a	DET
k930bv75n6f	6	6	single	single	ADJ
k930bv75n6f	6	7	noise	noise	NOUN
k930bv75n6f	6	8	peak	peak	NOUN
k930bv75n6f	6	9	was	be	AUX
k930bv75n6f	6	10	observed	observe	VERB
k930bv75n6f	6	11	,	,	PUNCT
k930bv75n6f	6	12	offset	offset	VERB
k930bv75n6f	6	13	from	from	ADP
k930bv75n6f	6	14	the	the	DET
k930bv75n6f	6	15	charge	charge	NOUN
k930bv75n6f	6	16	neutrality	neutrality	NOUN
k930bv75n6f	6	17	point	point	NOUN
k930bv75n6f	6	18	(	(	PUNCT
k930bv75n6f	6	19	cnp	cnp	PROPN
k930bv75n6f	6	20	)	)	PUNCT
k930bv75n6f	6	21	.	.	PUNCT
k930bv75n6f	7	1	a	a	DET
k930bv75n6f	7	2	new	new	ADJ
k930bv75n6f	7	3	noise	noise	NOUN
k930bv75n6f	7	4	model	model	NOUN
k930bv75n6f	7	5	based	base	VERB
k930bv75n6f	7	6	upon	upon	SCONJ
k930bv75n6f	7	7	a	a	DET
k930bv75n6f	7	8	random	random	ADJ
k930bv75n6f	7	9	array	array	NOUN
k930bv75n6f	7	10	of	of	ADP
k930bv75n6f	7	11	charge	charge	NOUN
k930bv75n6f	7	12	traps	trap	NOUN
k930bv75n6f	7	13	is	be	AUX
k930bv75n6f	7	14	presented	present	VERB
k930bv75n6f	7	15	,	,	PUNCT
k930bv75n6f	7	16	which	which	PRON
k930bv75n6f	7	17	not	not	PART
k930bv75n6f	7	18	only	only	ADV
k930bv75n6f	7	19	reproduces	reproduce	VERB
k930bv75n6f	7	20	the	the	DET
k930bv75n6f	7	21	observed	observed	ADJ
k930bv75n6f	7	22	gate	gate	NOUN
k930bv75n6f	7	23	voltage	voltage	NOUN
k930bv75n6f	7	24	offset	offset	VERB
k930bv75n6f	7	25	of	of	ADP
k930bv75n6f	7	26	the	the	DET
k930bv75n6f	7	27	noise	noise	NOUN
k930bv75n6f	7	28	peak	peak	NOUN
k930bv75n6f	7	29	from	from	ADP
k930bv75n6f	7	30	the	the	DET
k930bv75n6f	7	31	cnp	cnp	PROPN
k930bv75n6f	7	32	,	,	PUNCT
k930bv75n6f	7	33	but	but	CCONJ
k930bv75n6f	7	34	also	also	ADV
k930bv75n6f	7	35	explains	explain	VERB
k930bv75n6f	7	36	the	the	DET
k930bv75n6f	7	37	noise	noise	NOUN
k930bv75n6f	7	38	asymmetry	asymmetry	NOUN
k930bv75n6f	7	39	between	between	ADP
k930bv75n6f	7	40	the	the	DET
k930bv75n6f	7	41	electron	electron	NOUN
k930bv75n6f	7	42	and	and	CCONJ
k930bv75n6f	7	43	hole	hole	NOUN
k930bv75n6f	7	44	branches	branch	NOUN
k930bv75n6f	7	45	.	.	PUNCT