id	sid	tid	token	lemma	pos
ht24wh26f6r	1	1	heat	heat	NOUN
ht24wh26f6r	1	2	dissipation	dissipation	NOUN
ht24wh26f6r	1	3	is	be	AUX
ht24wh26f6r	1	4	the	the	DET
ht24wh26f6r	1	5	fundamental	fundamental	ADJ
ht24wh26f6r	1	6	limit	limit	NOUN
ht24wh26f6r	1	7	to	to	ADP
ht24wh26f6r	1	8	computational	computational	ADJ
ht24wh26f6r	1	9	performance	performance	NOUN
ht24wh26f6r	1	10	.	.	PUNCT
ht24wh26f6r	2	1	in	in	ADP
ht24wh26f6r	2	2	conventional	conventional	ADJ
ht24wh26f6r	2	3	digital	digital	ADJ
ht24wh26f6r	2	4	architectures	architecture	NOUN
ht24wh26f6r	2	5	,	,	PUNCT
ht24wh26f6r	2	6	transistors	transistor	NOUN
ht24wh26f6r	2	7	are	be	AUX
ht24wh26f6r	2	8	used	use	VERB
ht24wh26f6r	2	9	as	as	ADP
ht24wh26f6r	2	10	switches	switch	NOUN
ht24wh26f6r	2	11	to	to	PART
ht24wh26f6r	2	12	charge	charge	VERB
ht24wh26f6r	2	13	and	and	CCONJ
ht24wh26f6r	2	14	discharge	discharge	NOUN
ht24wh26f6r	2	15	capacitors	capacitor	NOUN
ht24wh26f6r	2	16	,	,	PUNCT
ht24wh26f6r	2	17	and	and	CCONJ
ht24wh26f6r	2	18	signal	signal	ADJ
ht24wh26f6r	2	19	transitions	transition	NOUN
ht24wh26f6r	2	20	between	between	ADP
ht24wh26f6r	2	21	a	a	DET
ht24wh26f6r	2	22	high	high	ADJ
ht24wh26f6r	2	23	-	-	PUNCT
ht24wh26f6r	2	24	energy	energy	NOUN
ht24wh26f6r	2	25	state	state	NOUN
ht24wh26f6r	2	26	(	(	PUNCT
ht24wh26f6r	2	27	i.e.	i.e.	X
ht24wh26f6r	2	28	logic	logic	NOUN
ht24wh26f6r	2	29	1	1	NUM
ht24wh26f6r	2	30	)	)	PUNCT
ht24wh26f6r	2	31	and	and	CCONJ
ht24wh26f6r	2	32	a	a	DET
ht24wh26f6r	2	33	low	low	ADJ
ht24wh26f6r	2	34	-	-	PUNCT
ht24wh26f6r	2	35	energy	energy	NOUN
ht24wh26f6r	2	36	state	state	NOUN
ht24wh26f6r	2	37	(	(	PUNCT
ht24wh26f6r	2	38	logic	logic	NOUN
ht24wh26f6r	2	39	0	0	NUM
ht24wh26f6r	2	40	)	)	PUNCT
ht24wh26f6r	2	41	either	either	CCONJ
ht24wh26f6r	2	42	dump	dump	VERB
ht24wh26f6r	2	43	the	the	DET
ht24wh26f6r	2	44	energy	energy	NOUN
ht24wh26f6r	2	45	to	to	ADP
ht24wh26f6r	2	46	the	the	DET
ht24wh26f6r	2	47	ground	ground	NOUN
ht24wh26f6r	2	48	or	or	CCONJ
ht24wh26f6r	2	49	draw	draw	VERB
ht24wh26f6r	2	50	more	more	ADJ
ht24wh26f6r	2	51	energy	energy	NOUN
ht24wh26f6r	2	52	from	from	ADP
ht24wh26f6r	2	53	a	a	DET
ht24wh26f6r	2	54	power	power	NOUN
ht24wh26f6r	2	55	source	source	NOUN
ht24wh26f6r	2	56	.	.	PUNCT
ht24wh26f6r	3	1	energy	energy	NOUN
ht24wh26f6r	3	2	has	have	VERB
ht24wh26f6r	3	3	to	to	PART
ht24wh26f6r	3	4	dissipate	dissipate	VERB
ht24wh26f6r	3	5	to	to	PART
ht24wh26f6r	3	6	heat	heat	VERB
ht24wh26f6r	3	7	in	in	ADP
ht24wh26f6r	3	8	the	the	DET
ht24wh26f6r	3	9	process	process	NOUN
ht24wh26f6r	3	10	.	.	PUNCT
ht24wh26f6r	4	1	in	in	ADP
ht24wh26f6r	4	2	quantum	quantum	NOUN
ht24wh26f6r	4	3	-	-	PUNCT
ht24wh26f6r	4	4	dot	dot	NOUN
ht24wh26f6r	4	5	cellular	cellular	NOUN
ht24wh26f6r	4	6	automata	automata	PROPN
ht24wh26f6r	4	7	(	(	PUNCT
ht24wh26f6r	4	8	qca	qca	PROPN
ht24wh26f6r	4	9	)	)	PUNCT
ht24wh26f6r	4	10	,	,	PUNCT
ht24wh26f6r	4	11	binary	binary	ADJ
ht24wh26f6r	4	12	information	information	NOUN
ht24wh26f6r	4	13	is	be	AUX
ht24wh26f6r	4	14	represented	represent	VERB
ht24wh26f6r	4	15	by	by	ADP
ht24wh26f6r	4	16	two	two	NUM
ht24wh26f6r	4	17	arrangements	arrangement	NOUN
ht24wh26f6r	4	18	of	of	ADP
ht24wh26f6r	4	19	electrons	electron	NOUN
ht24wh26f6r	4	20	in	in	ADP
ht24wh26f6r	4	21	the	the	DET
ht24wh26f6r	4	22	ground	ground	NOUN
ht24wh26f6r	4	23	states	state	NOUN
ht24wh26f6r	4	24	of	of	ADP
ht24wh26f6r	4	25	a	a	DET
ht24wh26f6r	4	26	qca	qca	PROPN
ht24wh26f6r	4	27	cell	cell	NOUN
ht24wh26f6r	4	28	,	,	PUNCT
ht24wh26f6r	4	29	and	and	CCONJ
ht24wh26f6r	4	30	logic	logic	NOUN
ht24wh26f6r	4	31	operations	operation	NOUN
ht24wh26f6r	4	32	can	can	AUX
ht24wh26f6r	4	33	be	be	AUX
ht24wh26f6r	4	34	highly	highly	ADV
ht24wh26f6r	4	35	energy	energy	NOUN
ht24wh26f6r	4	36	efficient.single	efficient.single	NOUN
ht24wh26f6r	4	37	electron	electron	NOUN
ht24wh26f6r	4	38	transistor	transistor	NOUN
ht24wh26f6r	4	39	(	(	PUNCT
ht24wh26f6r	4	40	set	set	NOUN
ht24wh26f6r	4	41	)	)	PUNCT
ht24wh26f6r	4	42	can	can	AUX
ht24wh26f6r	4	43	be	be	AUX
ht24wh26f6r	4	44	used	use	VERB
ht24wh26f6r	4	45	to	to	PART
ht24wh26f6r	4	46	implement	implement	VERB
ht24wh26f6r	4	47	qca	qca	PROPN
ht24wh26f6r	4	48	,	,	PUNCT
ht24wh26f6r	4	49	but	but	CCONJ
ht24wh26f6r	4	50	set	set	VERB
ht24wh26f6r	4	51	operations	operation	NOUN
ht24wh26f6r	4	52	at	at	ADP
ht24wh26f6r	4	53	room	room	NOUN
ht24wh26f6r	4	54	temperature	temperature	NOUN
ht24wh26f6r	4	55	require	require	VERB
ht24wh26f6r	4	56	extremely	extremely	ADV
ht24wh26f6r	4	57	small	small	ADJ
ht24wh26f6r	4	58	device	device	NOUN
ht24wh26f6r	4	59	geometry	geometry	NOUN
ht24wh26f6r	4	60	that	that	PRON
ht24wh26f6r	4	61	remains	remain	VERB
ht24wh26f6r	4	62	very	very	ADV
ht24wh26f6r	4	63	difficult	difficult	ADJ
ht24wh26f6r	4	64	to	to	PART
ht24wh26f6r	4	65	achieve	achieve	VERB
ht24wh26f6r	4	66	.	.	PUNCT
ht24wh26f6r	5	1	miniaturization	miniaturization	NOUN
ht24wh26f6r	5	2	of	of	ADP
ht24wh26f6r	5	3	silicon	silicon	NOUN
ht24wh26f6r	5	4	-	-	PUNCT
ht24wh26f6r	5	5	based	base	VERB
ht24wh26f6r	5	6	sets	set	NOUN
ht24wh26f6r	5	7	(	(	PUNCT
ht24wh26f6r	5	8	siset	siset	VERB
ht24wh26f6r	5	9	)	)	PUNCT
ht24wh26f6r	5	10	benefits	benefit	NOUN
ht24wh26f6r	5	11	from	from	ADP
ht24wh26f6r	5	12	si	si	PROPN
ht24wh26f6r	5	13	-	-	PUNCT
ht24wh26f6r	5	14	related	relate	VERB
ht24wh26f6r	5	15	fabrication	fabrication	NOUN
ht24wh26f6r	5	16	technologies	technology	NOUN
ht24wh26f6r	5	17	that	that	PRON
ht24wh26f6r	5	18	are	be	AUX
ht24wh26f6r	5	19	extensively	extensively	ADV
ht24wh26f6r	5	20	studied	study	VERB
ht24wh26f6r	5	21	and	and	CCONJ
ht24wh26f6r	5	22	accessible	accessible	ADJ
ht24wh26f6r	5	23	.	.	PUNCT
ht24wh26f6r	6	1	in	in	ADP
ht24wh26f6r	6	2	a	a	DET
ht24wh26f6r	6	3	manufacturable	manufacturable	ADJ
ht24wh26f6r	6	4	'	'	PUNCT
ht24wh26f6r	6	5	top	top	ADJ
ht24wh26f6r	6	6	-	-	PUNCT
ht24wh26f6r	6	7	down	down	NOUN
ht24wh26f6r	6	8	'	'	PUNCT
ht24wh26f6r	6	9	approach	approach	NOUN
ht24wh26f6r	6	10	,	,	PUNCT
ht24wh26f6r	6	11	fabrication	fabrication	NOUN
ht24wh26f6r	6	12	of	of	ADP
ht24wh26f6r	6	13	such	such	ADJ
ht24wh26f6r	6	14	nanoscale	nanoscale	ADJ
ht24wh26f6r	6	15	devices	device	NOUN
ht24wh26f6r	6	16	has	have	AUX
ht24wh26f6r	6	17	traditionally	traditionally	ADV
ht24wh26f6r	6	18	relied	rely	VERB
ht24wh26f6r	6	19	on	on	ADP
ht24wh26f6r	6	20	the	the	DET
ht24wh26f6r	6	21	finest	fine	ADJ
ht24wh26f6r	6	22	resolution	resolution	NOUN
ht24wh26f6r	6	23	of	of	ADP
ht24wh26f6r	6	24	lithography	lithography	NOUN
ht24wh26f6r	6	25	and	and	CCONJ
ht24wh26f6r	6	26	dry	dry	ADJ
ht24wh26f6r	6	27	etching	etching	NOUN
ht24wh26f6r	6	28	.	.	PUNCT
ht24wh26f6r	7	1	this	this	DET
ht24wh26f6r	7	2	dissertation	dissertation	NOUN
ht24wh26f6r	7	3	reports	report	VERB
ht24wh26f6r	7	4	the	the	DET
ht24wh26f6r	7	5	development	development	NOUN
ht24wh26f6r	7	6	of	of	ADP
ht24wh26f6r	7	7	a	a	DET
ht24wh26f6r	7	8	siset	siset	ADJ
ht24wh26f6r	7	9	fabrication	fabrication	NOUN
ht24wh26f6r	7	10	technique	technique	NOUN
ht24wh26f6r	7	11	that	that	PRON
ht24wh26f6r	7	12	incorporates	incorporate	VERB
ht24wh26f6r	7	13	a	a	DET
ht24wh26f6r	7	14	new	new	ADJ
ht24wh26f6r	7	15	approach	approach	NOUN
ht24wh26f6r	7	16	.	.	PUNCT
ht24wh26f6r	8	1	chemical	chemical	ADJ
ht24wh26f6r	8	2	mechanical	mechanical	ADJ
ht24wh26f6r	8	3	polishing	polishing	NOUN
ht24wh26f6r	8	4	(	(	PUNCT
ht24wh26f6r	8	5	cmp	cmp	NOUN
ht24wh26f6r	8	6	)	)	PUNCT
ht24wh26f6r	8	7	removes	remove	VERB
ht24wh26f6r	8	8	material	material	NOUN
ht24wh26f6r	8	9	based	base	VERB
ht24wh26f6r	8	10	on	on	ADP
ht24wh26f6r	8	11	the	the	DET
ht24wh26f6r	8	12	surface	surface	NOUN
ht24wh26f6r	8	13	topography	topography	NOUN
ht24wh26f6r	8	14	instead	instead	ADV
ht24wh26f6r	8	15	of	of	ADP
ht24wh26f6r	8	16	a	a	DET
ht24wh26f6r	8	17	mask	mask	NOUN
ht24wh26f6r	8	18	,	,	PUNCT
ht24wh26f6r	8	19	and	and	CCONJ
ht24wh26f6r	8	20	the	the	DET
ht24wh26f6r	8	21	integration	integration	NOUN
ht24wh26f6r	8	22	of	of	ADP
ht24wh26f6r	8	23	cmp	cmp	NOUN
ht24wh26f6r	8	24	in	in	ADP
ht24wh26f6r	8	25	device	device	NOUN
ht24wh26f6r	8	26	fabrication	fabrication	NOUN
ht24wh26f6r	8	27	has	have	AUX
ht24wh26f6r	8	28	provided	provide	VERB
ht24wh26f6r	8	29	us	we	PRON
ht24wh26f6r	8	30	with	with	ADP
ht24wh26f6r	8	31	new	new	ADJ
ht24wh26f6r	8	32	possibilities	possibility	NOUN
ht24wh26f6r	8	33	to	to	PART
ht24wh26f6r	8	34	construct	construct	VERB
ht24wh26f6r	8	35	an	an	DET
ht24wh26f6r	8	36	ideal	ideal	NOUN
ht24wh26f6r	8	37	siset.the	siset.the	DET
ht24wh26f6r	8	38	fabricated	fabricate	VERB
ht24wh26f6r	8	39	devices	device	NOUN
ht24wh26f6r	8	40	show	show	VERB
ht24wh26f6r	8	41	that	that	SCONJ
ht24wh26f6r	8	42	the	the	DET
ht24wh26f6r	8	43	presence	presence	NOUN
ht24wh26f6r	8	44	of	of	ADP
ht24wh26f6r	8	45	dopants	dopant	NOUN
ht24wh26f6r	8	46	in	in	ADP
ht24wh26f6r	8	47	the	the	DET
ht24wh26f6r	8	48	silicon	silicon	NOUN
ht24wh26f6r	8	49	causes	cause	VERB
ht24wh26f6r	8	50	coulomb	coulomb	NOUN
ht24wh26f6r	8	51	blockade	blockade	NOUN
ht24wh26f6r	8	52	oscillations	oscillation	NOUN
ht24wh26f6r	8	53	(	(	PUNCT
ht24wh26f6r	8	54	cbo	cbo	PROPN
ht24wh26f6r	8	55	)	)	PUNCT
ht24wh26f6r	8	56	to	to	PART
ht24wh26f6r	8	57	be	be	AUX
ht24wh26f6r	8	58	very	very	ADV
ht24wh26f6r	8	59	irregular	irregular	ADJ
ht24wh26f6r	8	60	,	,	PUNCT
ht24wh26f6r	8	61	which	which	PRON
ht24wh26f6r	8	62	is	be	AUX
ht24wh26f6r	8	63	an	an	DET
ht24wh26f6r	8	64	undesirable	undesirable	ADJ
ht24wh26f6r	8	65	feature	feature	NOUN
ht24wh26f6r	8	66	for	for	SCONJ
ht24wh26f6r	8	67	sisets	siset	NOUN
ht24wh26f6r	8	68	to	to	PART
ht24wh26f6r	8	69	be	be	AUX
ht24wh26f6r	8	70	used	use	VERB
ht24wh26f6r	8	71	as	as	ADP
ht24wh26f6r	8	72	electrometers	electrometer	NOUN
ht24wh26f6r	8	73	.	.	PUNCT
ht24wh26f6r	9	1	by	by	ADP
ht24wh26f6r	9	2	replacing	replace	VERB
ht24wh26f6r	9	3	the	the	DET
ht24wh26f6r	9	4	doped	doped	ADJ
ht24wh26f6r	9	5	silicon	silicon	NOUN
ht24wh26f6r	9	6	island	island	NOUN
ht24wh26f6r	9	7	with	with	ADP
ht24wh26f6r	9	8	aluminum	aluminum	NOUN
ht24wh26f6r	9	9	,	,	PUNCT
ht24wh26f6r	9	10	we	we	PRON
ht24wh26f6r	9	11	produce	produce	VERB
ht24wh26f6r	9	12	a	a	DET
ht24wh26f6r	9	13	composite	composite	ADJ
ht24wh26f6r	9	14	al	al	NOUN
ht24wh26f6r	9	15	-	-	PUNCT
ht24wh26f6r	9	16	siset	siset	NOUN
ht24wh26f6r	9	17	with	with	ADP
ht24wh26f6r	9	18	that	that	DET
ht24wh26f6r	9	19	exhibits	exhibit	NOUN
ht24wh26f6r	9	20	periodic	periodic	ADJ
ht24wh26f6r	9	21	cbos	cbo	NOUN
ht24wh26f6r	9	22	that	that	PRON
ht24wh26f6r	9	23	are	be	AUX
ht24wh26f6r	9	24	similar	similar	ADJ
ht24wh26f6r	9	25	to	to	ADP
ht24wh26f6r	9	26	an	an	DET
ht24wh26f6r	9	27	al	al	PROPN
ht24wh26f6r	9	28	/	/	SYM
ht24wh26f6r	9	29	alox	alox	NOUN
ht24wh26f6r	9	30	set	set	VERB
ht24wh26f6r	9	31	.	.	PUNCT
ht24wh26f6r	10	1	by	by	ADP
ht24wh26f6r	10	2	eliminating	eliminate	VERB
ht24wh26f6r	10	3	dopants	dopant	NOUN
ht24wh26f6r	10	4	from	from	ADP
ht24wh26f6r	10	5	the	the	DET
ht24wh26f6r	10	6	island	island	NOUN
ht24wh26f6r	10	7	of	of	ADP
ht24wh26f6r	10	8	the	the	DET
ht24wh26f6r	10	9	siset	siset	NOUN
ht24wh26f6r	10	10	,	,	PUNCT
ht24wh26f6r	10	11	we	we	PRON
ht24wh26f6r	10	12	are	be	AUX
ht24wh26f6r	10	13	able	able	ADJ
ht24wh26f6r	10	14	to	to	PART
ht24wh26f6r	10	15	study	study	VERB
ht24wh26f6r	10	16	the	the	DET
ht24wh26f6r	10	17	effects	effect	NOUN
ht24wh26f6r	10	18	of	of	ADP
ht24wh26f6r	10	19	dopants	dopant	NOUN
ht24wh26f6r	10	20	in	in	ADP
ht24wh26f6r	10	21	the	the	DET
ht24wh26f6r	10	22	access	access	NOUN
ht24wh26f6r	10	23	region	region	NOUN
ht24wh26f6r	10	24	in	in	ADP
ht24wh26f6r	10	25	the	the	DET
ht24wh26f6r	10	26	silicon	silicon	NOUN
ht24wh26f6r	10	27	leads	lead	VERB
ht24wh26f6r	10	28	.	.	PUNCT
ht24wh26f6r	11	1	the	the	DET
ht24wh26f6r	11	2	al	al	PROPN
ht24wh26f6r	11	3	-	-	PUNCT
ht24wh26f6r	11	4	sisets	sisets	PROPN
ht24wh26f6r	11	5	exhibit	exhibit	VERB
ht24wh26f6r	11	6	various	various	ADJ
ht24wh26f6r	11	7	characteristics	characteristic	NOUN
ht24wh26f6r	11	8	that	that	PRON
ht24wh26f6r	11	9	are	be	AUX
ht24wh26f6r	11	10	influenced	influence	VERB
ht24wh26f6r	11	11	by	by	ADP
ht24wh26f6r	11	12	the	the	DET
ht24wh26f6r	11	13	electron	electron	NOUN
ht24wh26f6r	11	14	and	and	CCONJ
ht24wh26f6r	11	15	the	the	DET
ht24wh26f6r	11	16	dopant	dopant	ADJ
ht24wh26f6r	11	17	density	density	NOUN
ht24wh26f6r	11	18	in	in	ADP
ht24wh26f6r	11	19	the	the	DET
ht24wh26f6r	11	20	leads	lead	NOUN
ht24wh26f6r	11	21	.	.	PUNCT
ht24wh26f6r	12	1	at	at	ADP
ht24wh26f6r	12	2	low	low	ADJ
ht24wh26f6r	12	3	temperature	temperature	NOUN
ht24wh26f6r	12	4	,	,	PUNCT
ht24wh26f6r	12	5	these	these	DET
ht24wh26f6r	12	6	devices	device	NOUN
ht24wh26f6r	12	7	operate	operate	VERB
ht24wh26f6r	12	8	as	as	ADP
ht24wh26f6r	12	9	sets	set	NOUN
ht24wh26f6r	12	10	,	,	PUNCT
ht24wh26f6r	12	11	but	but	CCONJ
ht24wh26f6r	12	12	at	at	ADP
ht24wh26f6r	12	13	room	room	NOUN
ht24wh26f6r	12	14	temperature	temperature	NOUN
ht24wh26f6r	12	15	,	,	PUNCT
ht24wh26f6r	12	16	tunnel	tunnel	NOUN
ht24wh26f6r	12	17	field	field	NOUN
ht24wh26f6r	12	18	effect	effect	NOUN
ht24wh26f6r	12	19	transistor	transistor	NOUN
ht24wh26f6r	12	20	-	-	PUNCT
ht24wh26f6r	12	21	like	like	ADJ
ht24wh26f6r	12	22	behaviors	behavior	NOUN
ht24wh26f6r	12	23	are	be	AUX
ht24wh26f6r	12	24	observed	observe	VERB
ht24wh26f6r	12	25	.	.	PUNCT
ht24wh26f6r	13	1	in	in	ADP
ht24wh26f6r	13	2	conclusion	conclusion	NOUN
ht24wh26f6r	13	3	,	,	PUNCT
ht24wh26f6r	13	4	we	we	PRON
ht24wh26f6r	13	5	have	have	AUX
ht24wh26f6r	13	6	developed	develop	VERB
ht24wh26f6r	13	7	a	a	DET
ht24wh26f6r	13	8	new	new	ADJ
ht24wh26f6r	13	9	type	type	NOUN
ht24wh26f6r	13	10	of	of	ADP
ht24wh26f6r	13	11	sisets	siset	NOUN
ht24wh26f6r	13	12	by	by	ADP
ht24wh26f6r	13	13	integrating	integrate	VERB
ht24wh26f6r	13	14	cmp	cmp	NOUN
ht24wh26f6r	13	15	in	in	ADP
ht24wh26f6r	13	16	device	device	NOUN
ht24wh26f6r	13	17	fabrication	fabrication	NOUN
ht24wh26f6r	13	18	.	.	PUNCT
ht24wh26f6r	14	1	the	the	DET
ht24wh26f6r	14	2	fabrication	fabrication	NOUN
ht24wh26f6r	14	3	technique	technique	NOUN
ht24wh26f6r	14	4	has	have	AUX
ht24wh26f6r	14	5	demonstrated	demonstrate	VERB
ht24wh26f6r	14	6	great	great	ADJ
ht24wh26f6r	14	7	potential	potential	NOUN
ht24wh26f6r	14	8	to	to	PART
ht24wh26f6r	14	9	construct	construct	VERB
ht24wh26f6r	14	10	an	an	DET
ht24wh26f6r	14	11	ideal	ideal	ADJ
ht24wh26f6r	14	12	electrometer	electrometer	NOUN
ht24wh26f6r	14	13	for	for	ADP
ht24wh26f6r	14	14	qca	qca	PROPN
ht24wh26f6r	14	15	.	.	PUNCT