id	sid	tid	token	lemma	pos
h989r21139z	1	1	the	the	DET
h989r21139z	1	2	demand	demand	NOUN
h989r21139z	1	3	for	for	ADP
h989r21139z	1	4	enhancement	enhancement	NOUN
h989r21139z	1	5	of	of	ADP
h989r21139z	1	6	computational	computational	ADJ
h989r21139z	1	7	performance	performance	NOUN
h989r21139z	1	8	has	have	AUX
h989r21139z	1	9	been	be	AUX
h989r21139z	1	10	primarily	primarily	ADV
h989r21139z	1	11	driven	drive	VERB
h989r21139z	1	12	by	by	ADP
h989r21139z	1	13	the	the	DET
h989r21139z	1	14	continued	continued	ADJ
h989r21139z	1	15	scaling	scaling	NOUN
h989r21139z	1	16	of	of	ADP
h989r21139z	1	17	cmos	cmos	NOUN
h989r21139z	1	18	transistors	transistor	NOUN
h989r21139z	1	19	.	.	PUNCT
h989r21139z	2	1	however	however	ADV
h989r21139z	2	2	,	,	PUNCT
h989r21139z	2	3	as	as	SCONJ
h989r21139z	2	4	gate	gate	NOUN
h989r21139z	2	5	lengths	length	NOUN
h989r21139z	2	6	approach	approach	VERB
h989r21139z	2	7	single	single	ADJ
h989r21139z	2	8	digits	digit	NOUN
h989r21139z	2	9	,	,	PUNCT
h989r21139z	2	10	this	this	DET
h989r21139z	2	11	method	method	NOUN
h989r21139z	2	12	alone	alone	ADV
h989r21139z	2	13	is	be	AUX
h989r21139z	2	14	not	not	PART
h989r21139z	2	15	sustainable	sustainable	ADJ
h989r21139z	2	16	in	in	ADP
h989r21139z	2	17	the	the	DET
h989r21139z	2	18	future	future	NOUN
h989r21139z	2	19	,	,	PUNCT
h989r21139z	2	20	and	and	CCONJ
h989r21139z	2	21	as	as	ADP
h989r21139z	2	22	such	such	ADJ
h989r21139z	2	23	,	,	PUNCT
h989r21139z	2	24	requires	require	VERB
h989r21139z	2	25	new	new	ADJ
h989r21139z	2	26	devices	device	NOUN
h989r21139z	2	27	to	to	PART
h989r21139z	2	28	complement	complement	VERB
h989r21139z	2	29	advanced	advanced	ADJ
h989r21139z	2	30	cmos	cmos	NOUN
h989r21139z	2	31	technology	technology	NOUN
h989r21139z	2	32	.	.	PUNCT
h989r21139z	3	1	the	the	DET
h989r21139z	3	2	goal	goal	NOUN
h989r21139z	3	3	of	of	ADP
h989r21139z	3	4	this	this	DET
h989r21139z	3	5	thesis	thesis	NOUN
h989r21139z	3	6	is	be	AUX
h989r21139z	3	7	to	to	PART
h989r21139z	3	8	evaluate	evaluate	VERB
h989r21139z	3	9	the	the	DET
h989r21139z	3	10	potential	potential	ADJ
h989r21139z	3	11	complementary	complementary	ADJ
h989r21139z	3	12	device	device	NOUN
h989r21139z	3	13	applications	application	NOUN
h989r21139z	3	14	that	that	PRON
h989r21139z	3	15	can	can	AUX
h989r21139z	3	16	be	be	AUX
h989r21139z	3	17	enabled	enable	VERB
h989r21139z	3	18	through	through	ADP
h989r21139z	3	19	threshold	threshold	NOUN
h989r21139z	3	20	switching	switching	NOUN
h989r21139z	3	21	-	-	PUNCT
h989r21139z	3	22	based	base	VERB
h989r21139z	3	23	materials	material	NOUN
h989r21139z	3	24	and	and	CCONJ
h989r21139z	3	25	devices	device	NOUN
h989r21139z	3	26	.	.	PUNCT
h989r21139z	4	1	this	this	DET
h989r21139z	4	2	work	work	NOUN
h989r21139z	4	3	will	will	AUX
h989r21139z	4	4	highlight	highlight	VERB
h989r21139z	4	5	the	the	DET
h989r21139z	4	6	design	design	NOUN
h989r21139z	4	7	,	,	PUNCT
h989r21139z	4	8	fabrication	fabrication	NOUN
h989r21139z	4	9	,	,	PUNCT
h989r21139z	4	10	and	and	CCONJ
h989r21139z	4	11	engineering	engineering	NOUN
h989r21139z	4	12	strategies	strategy	NOUN
h989r21139z	4	13	using	use	VERB
h989r21139z	4	14	threshold	threshold	NOUN
h989r21139z	4	15	switching	switch	VERB
h989r21139z	4	16	phenomena	phenomenon	NOUN
h989r21139z	4	17	that	that	PRON
h989r21139z	4	18	can	can	AUX
h989r21139z	4	19	not	not	PART
h989r21139z	4	20	only	only	ADV
h989r21139z	4	21	enhance	enhance	VERB
h989r21139z	4	22	the	the	DET
h989r21139z	4	23	performance	performance	NOUN
h989r21139z	4	24	of	of	ADP
h989r21139z	4	25	conventional	conventional	ADJ
h989r21139z	4	26	logic	logic	NOUN
h989r21139z	4	27	,	,	PUNCT
h989r21139z	4	28	but	but	CCONJ
h989r21139z	4	29	also	also	ADV
h989r21139z	4	30	memory	memory	NOUN
h989r21139z	4	31	and	and	CCONJ
h989r21139z	4	32	millimeter	millimeter	NOUN
h989r21139z	4	33	wave	wave	NOUN
h989r21139z	4	34	technology	technology	NOUN
h989r21139z	4	35	for	for	ADP
h989r21139z	4	36	continued	continued	ADJ
h989r21139z	4	37	improvements	improvement	NOUN
h989r21139z	4	38	in	in	ADP
h989r21139z	4	39	computational	computational	ADJ
h989r21139z	4	40	performance	performance	NOUN
h989r21139z	4	41	.	.	PUNCT
h989r21139z	5	1	the	the	DET
h989r21139z	5	2	work	work	NOUN
h989r21139z	5	3	will	will	AUX
h989r21139z	5	4	discuss	discuss	VERB
h989r21139z	5	5	the	the	DET
h989r21139z	5	6	application	application	NOUN
h989r21139z	5	7	of	of	ADP
h989r21139z	5	8	threshold	threshold	ADJ
h989r21139z	5	9	switches	switch	NOUN
h989r21139z	5	10	to	to	ADP
h989r21139z	5	11	three	three	NUM
h989r21139z	5	12	device	device	NOUN
h989r21139z	5	13	architectures	architecture	NOUN
h989r21139z	5	14	–	–	PUNCT
h989r21139z	5	15	(	(	PUNCT
h989r21139z	5	16	1	1	X
h989r21139z	5	17	)	)	PUNCT
h989r21139z	5	18	a	a	DET
h989r21139z	5	19	hybrid	hybrid	ADJ
h989r21139z	5	20	transistor	transistor	NOUN
h989r21139z	5	21	design	design	NOUN
h989r21139z	5	22	,	,	PUNCT
h989r21139z	5	23	phase	phase	NOUN
h989r21139z	5	24	-	-	PUNCT
h989r21139z	5	25	fet	fet	NOUN
h989r21139z	5	26	,	,	PUNCT
h989r21139z	5	27	where	where	SCONJ
h989r21139z	5	28	the	the	DET
h989r21139z	5	29	innate	innate	ADJ
h989r21139z	5	30	abrupt	abrupt	ADJ
h989r21139z	5	31	switching	switch	VERB
h989r21139z	5	32	nature	nature	NOUN
h989r21139z	5	33	and	and	CCONJ
h989r21139z	5	34	orders	order	NOUN
h989r21139z	5	35	of	of	ADP
h989r21139z	5	36	magnitude	magnitude	NOUN
h989r21139z	5	37	change	change	NOUN
h989r21139z	5	38	in	in	ADP
h989r21139z	5	39	resistivity	resistivity	NOUN
h989r21139z	5	40	are	be	AUX
h989r21139z	5	41	used	use	VERB
h989r21139z	5	42	to	to	PART
h989r21139z	5	43	surpass	surpass	VERB
h989r21139z	5	44	conventional	conventional	ADJ
h989r21139z	5	45	transistor	transistor	NOUN
h989r21139z	5	46	performance	performance	NOUN
h989r21139z	5	47	(	(	PUNCT
h989r21139z	5	48	2	2	NUM
h989r21139z	5	49	)	)	PUNCT
h989r21139z	5	50	cross	cross	ADJ
h989r21139z	5	51	-	-	ADJ
h989r21139z	5	52	point	point	NOUN
h989r21139z	5	53	selectors	selector	NOUN
h989r21139z	5	54	,	,	PUNCT
h989r21139z	5	55	where	where	SCONJ
h989r21139z	5	56	the	the	DET
h989r21139z	5	57	large	large	ADJ
h989r21139z	5	58	on	on	ADP
h989r21139z	5	59	-	-	PUNCT
h989r21139z	5	60	off	off	ADP
h989r21139z	5	61	resistivity	resistivity	NOUN
h989r21139z	5	62	ratio	ratio	NOUN
h989r21139z	5	63	can	can	AUX
h989r21139z	5	64	aid	aid	VERB
h989r21139z	5	65	in	in	ADP
h989r21139z	5	66	the	the	DET
h989r21139z	5	67	suppression	suppression	NOUN
h989r21139z	5	68	of	of	ADP
h989r21139z	5	69	sneak	sneak	NOUN
h989r21139z	5	70	-	-	PUNCT
h989r21139z	5	71	path	path	NOUN
h989r21139z	5	72	leakage	leakage	NOUN
h989r21139z	5	73	current	current	NOUN
h989r21139z	5	74	for	for	ADP
h989r21139z	5	75	high	high	ADJ
h989r21139z	5	76	density	density	NOUN
h989r21139z	5	77	memory	memory	NOUN
h989r21139z	5	78	arrays	array	NOUN
h989r21139z	5	79	and	and	CCONJ
h989r21139z	5	80	(	(	PUNCT
h989r21139z	5	81	3	3	X
h989r21139z	5	82	)	)	PUNCT
h989r21139z	5	83	a	a	DET
h989r21139z	5	84	mm	mm	ADJ
h989r21139z	5	85	-	-	PUNCT
h989r21139z	5	86	wave	wave	NOUN
h989r21139z	5	87	rf	rf	NOUN
h989r21139z	5	88	switch	switch	NOUN
h989r21139z	5	89	,	,	PUNCT
h989r21139z	5	90	where	where	SCONJ
h989r21139z	5	91	the	the	DET
h989r21139z	5	92	abrupt	abrupt	ADJ
h989r21139z	5	93	switching	switching	NOUN
h989r21139z	5	94	phenomenon	phenomenon	NOUN
h989r21139z	5	95	in	in	ADP
h989r21139z	5	96	the	the	DET
h989r21139z	5	97	threshold	threshold	ADJ
h989r21139z	5	98	switch	switch	NOUN
h989r21139z	5	99	can	can	AUX
h989r21139z	5	100	be	be	AUX
h989r21139z	5	101	triggered	trigger	VERB
h989r21139z	5	102	using	use	VERB
h989r21139z	5	103	mm	mm	ADJ
h989r21139z	5	104	-	-	PUNCT
h989r21139z	5	105	wave	wave	NOUN
h989r21139z	5	106	pulses	pulse	NOUN
h989r21139z	5	107	to	to	PART
h989r21139z	5	108	enable	enable	VERB
h989r21139z	5	109	rf	rf	ADJ
h989r21139z	5	110	circuits	circuit	NOUN
h989r21139z	5	111	over	over	ADP
h989r21139z	5	112	wide	wide	ADJ
h989r21139z	5	113	temperature	temperature	NOUN
h989r21139z	5	114	ranges	range	NOUN
h989r21139z	5	115	.	.	PUNCT