id	sid	tid	token	lemma	pos
h415p844k32	1	1	the	the	DET
h415p844k32	1	2	increasing	increase	VERB
h415p844k32	1	3	interest	interest	NOUN
h415p844k32	1	4	in	in	ADP
h415p844k32	1	5	on	on	ADP
h415p844k32	1	6	-	-	PUNCT
h415p844k32	1	7	chip	chip	NOUN
h415p844k32	1	8	plasmonic	plasmonic	ADJ
h415p844k32	1	9	devices	device	NOUN
h415p844k32	1	10	underscores	underscore	VERB
h415p844k32	1	11	the	the	DET
h415p844k32	1	12	importance	importance	NOUN
h415p844k32	1	13	of	of	ADP
h415p844k32	1	14	having	have	VERB
h415p844k32	1	15	a	a	DET
h415p844k32	1	16	fundamental	fundamental	ADJ
h415p844k32	1	17	understanding	understanding	NOUN
h415p844k32	1	18	of	of	ADP
h415p844k32	1	19	the	the	DET
h415p844k32	1	20	interactions	interaction	NOUN
h415p844k32	1	21	occurring	occur	VERB
h415p844k32	1	22	when	when	SCONJ
h415p844k32	1	23	noble	noble	ADJ
h415p844k32	1	24	metal	metal	NOUN
h415p844k32	1	25	nanostructures	nanostructure	NOUN
h415p844k32	1	26	are	be	AUX
h415p844k32	1	27	brought	bring	VERB
h415p844k32	1	28	into	into	ADP
h415p844k32	1	29	contact	contact	NOUN
h415p844k32	1	30	with	with	ADP
h415p844k32	1	31	substrate	substrate	NOUN
h415p844k32	1	32	materials	material	NOUN
h415p844k32	1	33	.	.	PUNCT
h415p844k32	2	1	the	the	DET
h415p844k32	2	2	resulting	result	VERB
h415p844k32	2	3	adjustments	adjustment	NOUN
h415p844k32	2	4	to	to	ADP
h415p844k32	2	5	the	the	DET
h415p844k32	2	6	plasmon	plasmon	ADJ
h415p844k32	2	7	resonances	resonance	NOUN
h415p844k32	2	8	and	and	CCONJ
h415p844k32	2	9	electric	electric	ADJ
h415p844k32	2	10	near	near	NOUN
h415p844k32	2	11	-	-	PUNCT
h415p844k32	2	12	fields	field	NOUN
h415p844k32	2	13	are	be	AUX
h415p844k32	2	14	both	both	PRON
h415p844k32	2	15	significant	significant	ADJ
h415p844k32	2	16	and	and	CCONJ
h415p844k32	2	17	unavoidable	unavoidable	ADJ
h415p844k32	2	18	.	.	PUNCT
h415p844k32	3	1	in	in	ADP
h415p844k32	3	2	the	the	DET
h415p844k32	3	3	solid	solid	ADJ
h415p844k32	3	4	-	-	PUNCT
h415p844k32	3	5	state	state	NOUN
h415p844k32	3	6	dewetting	dewetting	NOUN
h415p844k32	3	7	of	of	ADP
h415p844k32	3	8	ultrathin	ultrathin	ADJ
h415p844k32	3	9	metal	metal	NOUN
h415p844k32	3	10	films	film	NOUN
h415p844k32	3	11	specifically	specifically	ADV
h415p844k32	3	12	,	,	PUNCT
h415p844k32	3	13	an	an	DET
h415p844k32	3	14	important	important	ADJ
h415p844k32	3	15	nanosynthesis	nanosynthesis	NOUN
h415p844k32	3	16	technique	technique	NOUN
h415p844k32	3	17	for	for	ADP
h415p844k32	3	18	many	many	ADJ
h415p844k32	3	19	modern	modern	ADJ
h415p844k32	3	20	technologies	technology	NOUN
h415p844k32	3	21	,	,	PUNCT
h415p844k32	3	22	the	the	DET
h415p844k32	3	23	resulting	result	VERB
h415p844k32	3	24	spherical	spherical	ADJ
h415p844k32	3	25	nanostructures	nanostructure	NOUN
h415p844k32	3	26	exhibit	exhibit	VERB
h415p844k32	3	27	a	a	DET
h415p844k32	3	28	thermodynamically	thermodynamically	ADV
h415p844k32	3	29	determined	determine	VERB
h415p844k32	3	30	truncation	truncation	NOUN
h415p844k32	3	31	by	by	ADP
h415p844k32	3	32	the	the	DET
h415p844k32	3	33	substrate	substrate	NOUN
h415p844k32	3	34	.	.	PUNCT
h415p844k32	4	1	the	the	DET
h415p844k32	4	2	effects	effect	NOUN
h415p844k32	4	3	of	of	ADP
h415p844k32	4	4	introducing	introduce	VERB
h415p844k32	4	5	asymmetry	asymmetry	NOUN
h415p844k32	4	6	in	in	ADP
h415p844k32	4	7	both	both	CCONJ
h415p844k32	4	8	the	the	DET
h415p844k32	4	9	surface	surface	NOUN
h415p844k32	4	10	structure	structure	NOUN
h415p844k32	4	11	and	and	CCONJ
h415p844k32	4	12	the	the	DET
h415p844k32	4	13	dielectric	dielectric	ADJ
h415p844k32	4	14	environment	environment	NOUN
h415p844k32	4	15	are	be	AUX
h415p844k32	4	16	critical	critical	ADJ
h415p844k32	4	17	for	for	ADP
h415p844k32	4	18	determining	determine	VERB
h415p844k32	4	19	optoelectronic	optoelectronic	ADJ
h415p844k32	4	20	properties	property	NOUN
h415p844k32	4	21	and	and	CCONJ
h415p844k32	4	22	are	be	AUX
h415p844k32	4	23	hence	hence	ADV
h415p844k32	4	24	impactful	impactful	ADJ
h415p844k32	4	25	parameters	parameter	NOUN
h415p844k32	4	26	to	to	PART
h415p844k32	4	27	understand	understand	VERB
h415p844k32	4	28	and	and	CCONJ
h415p844k32	4	29	manipulate	manipulate	VERB
h415p844k32	4	30	in	in	ADP
h415p844k32	4	31	the	the	DET
h415p844k32	4	32	rational	rational	ADJ
h415p844k32	4	33	design	design	NOUN
h415p844k32	4	34	of	of	ADP
h415p844k32	4	35	on	on	ADP
h415p844k32	4	36	-	-	PUNCT
h415p844k32	4	37	chip	chip	NOUN
h415p844k32	4	38	plasmonic	plasmonic	ADJ
h415p844k32	4	39	devices	device	NOUN
h415p844k32	4	40	.	.	PUNCT
h415p844k32	5	1	herein	herein	ADV
h415p844k32	5	2	,	,	PUNCT
h415p844k32	5	3	is	be	AUX
h415p844k32	5	4	demonstrated	demonstrate	VERB
h415p844k32	5	5	a	a	DET
h415p844k32	5	6	comprehensive	comprehensive	ADJ
h415p844k32	5	7	study	study	NOUN
h415p844k32	5	8	of	of	ADP
h415p844k32	5	9	the	the	DET
h415p844k32	5	10	effects	effect	NOUN
h415p844k32	5	11	of	of	ADP
h415p844k32	5	12	surface	surface	NOUN
h415p844k32	5	13	truncation	truncation	NOUN
h415p844k32	5	14	on	on	ADP
h415p844k32	5	15	the	the	DET
h415p844k32	5	16	plasmon	plasmon	ADJ
h415p844k32	5	17	resonance	resonance	NOUN
h415p844k32	5	18	and	and	CCONJ
h415p844k32	5	19	near	near	ADJ
h415p844k32	5	20	-	-	PUNCT
h415p844k32	5	21	fields	field	NOUN
h415p844k32	5	22	of	of	ADP
h415p844k32	5	23	substrate	substrate	NOUN
h415p844k32	5	24	-	-	PUNCT
h415p844k32	5	25	truncated	truncate	VERB
h415p844k32	5	26	nanostructures	nanostructure	NOUN
h415p844k32	5	27	,	,	PUNCT
h415p844k32	5	28	beginning	begin	VERB
h415p844k32	5	29	with	with	ADP
h415p844k32	5	30	ag	ag	PROPN
h415p844k32	5	31	nanospheres	nanosphere	NOUN
h415p844k32	5	32	,	,	PUNCT
h415p844k32	5	33	and	and	CCONJ
h415p844k32	5	34	expanding	expand	VERB
h415p844k32	5	35	to	to	PART
h415p844k32	5	36	include	include	VERB
h415p844k32	5	37	au	au	PROPN
h415p844k32	5	38	nanostars	nanostar	NOUN
h415p844k32	5	39	and	and	CCONJ
h415p844k32	5	40	hexagonal	hexagonal	ADJ
h415p844k32	5	41	au	au	X
h415p844k32	5	42	nanoplates	nanoplates	PROPN
h415p844k32	5	43	.	.	PUNCT