id	sid	tid	token	lemma	pos
h128nc6125h	1	1	the	the	DET
h128nc6125h	1	2	discovery	discovery	NOUN
h128nc6125h	1	3	of	of	ADP
h128nc6125h	1	4	new	new	ADJ
h128nc6125h	1	5	materials	material	NOUN
h128nc6125h	1	6	,	,	PUNCT
h128nc6125h	1	7	the	the	DET
h128nc6125h	1	8	improvement	improvement	NOUN
h128nc6125h	1	9	of	of	ADP
h128nc6125h	1	10	processing	processing	NOUN
h128nc6125h	1	11	,	,	PUNCT
h128nc6125h	1	12	and	and	CCONJ
h128nc6125h	1	13	the	the	DET
h128nc6125h	1	14	design	design	NOUN
h128nc6125h	1	15	of	of	ADP
h128nc6125h	1	16	new	new	ADJ
h128nc6125h	1	17	devices	device	NOUN
h128nc6125h	1	18	are	be	AUX
h128nc6125h	1	19	the	the	DET
h128nc6125h	1	20	three	three	NUM
h128nc6125h	1	21	engines	engine	NOUN
h128nc6125h	1	22	which	which	PRON
h128nc6125h	1	23	boost	boost	VERB
h128nc6125h	1	24	our	our	PRON
h128nc6125h	1	25	modern	modern	ADJ
h128nc6125h	1	26	semiconductor	semiconductor	NOUN
h128nc6125h	1	27	industry	industry	NOUN
h128nc6125h	1	28	.	.	PUNCT
h128nc6125h	2	1	building	building	NOUN
h128nc6125h	2	2	upon	upon	SCONJ
h128nc6125h	2	3	previous	previous	ADJ
h128nc6125h	2	4	work	work	NOUN
h128nc6125h	2	5	at	at	ADP
h128nc6125h	2	6	the	the	DET
h128nc6125h	2	7	university	university	PROPN
h128nc6125h	2	8	of	of	ADP
h128nc6125h	2	9	notre	notre	PROPN
h128nc6125h	2	10	dame	dame	NOUN
h128nc6125h	2	11	on	on	ADP
h128nc6125h	2	12	oxygen	oxygen	NOUN
h128nc6125h	2	13	-	-	PUNCT
h128nc6125h	2	14	enhanced	enhance	VERB
h128nc6125h	2	15	non	non	ADJ
h128nc6125h	2	16	-	-	ADJ
h128nc6125h	2	17	selective	selective	ADJ
h128nc6125h	2	18	wet	wet	ADJ
h128nc6125h	2	19	thermal	thermal	ADJ
h128nc6125h	2	20	oxidation	oxidation	NOUN
h128nc6125h	2	21	of	of	ADP
h128nc6125h	2	22	low	low	ADJ
h128nc6125h	2	23	al	al	PROPN
h128nc6125h	2	24	content	content	PROPN
h128nc6125h	2	25	iii	iii	NUM
h128nc6125h	2	26	-	-	PUNCT
h128nc6125h	2	27	v	v	NOUN
h128nc6125h	2	28	compound	compound	NOUN
h128nc6125h	2	29	semiconductor	semiconductor	NOUN
h128nc6125h	2	30	alloys	alloy	NOUN
h128nc6125h	2	31	,	,	PUNCT
h128nc6125h	2	32	which	which	PRON
h128nc6125h	2	33	has	have	AUX
h128nc6125h	2	34	simplified	simplify	VERB
h128nc6125h	2	35	the	the	DET
h128nc6125h	2	36	fabrication	fabrication	NOUN
h128nc6125h	2	37	of	of	ADP
h128nc6125h	2	38	advanced	advanced	ADJ
h128nc6125h	2	39	performance	performance	NOUN
h128nc6125h	2	40	diode	diode	NOUN
h128nc6125h	2	41	laser	laser	NOUN
h128nc6125h	2	42	devices	device	NOUN
h128nc6125h	2	43	,	,	PUNCT
h128nc6125h	2	44	this	this	DET
h128nc6125h	2	45	work	work	NOUN
h128nc6125h	2	46	has	have	AUX
h128nc6125h	2	47	further	far	ADV
h128nc6125h	2	48	expanded	expand	VERB
h128nc6125h	2	49	the	the	DET
h128nc6125h	2	50	application	application	NOUN
h128nc6125h	2	51	of	of	ADP
h128nc6125h	2	52	iii	iii	NUM
h128nc6125h	2	53	-	-	PUNCT
h128nc6125h	2	54	v	v	NOUN
h128nc6125h	2	55	native	native	ADJ
h128nc6125h	2	56	oxides	oxide	NOUN
h128nc6125h	2	57	in	in	ADP
h128nc6125h	2	58	photonic	photonic	ADJ
h128nc6125h	2	59	device	device	NOUN
h128nc6125h	2	60	fabrication	fabrication	NOUN
h128nc6125h	2	61	and	and	CCONJ
h128nc6125h	2	62	integration	integration	NOUN
h128nc6125h	2	63	while	while	SCONJ
h128nc6125h	2	64	stimulating	stimulate	VERB
h128nc6125h	2	65	additional	additional	ADJ
h128nc6125h	2	66	materials	material	NOUN
h128nc6125h	2	67	related	relate	VERB
h128nc6125h	2	68	discoveries.first	discoveries.first	ADV
h128nc6125h	2	69	,	,	PUNCT
h128nc6125h	2	70	the	the	DET
h128nc6125h	2	71	iii	iii	NUM
h128nc6125h	2	72	-	-	PUNCT
h128nc6125h	2	73	v	v	NOUN
h128nc6125h	2	74	native	native	ADJ
h128nc6125h	2	75	oxides	oxide	NOUN
h128nc6125h	2	76	grown	grow	VERB
h128nc6125h	2	77	by	by	ADP
h128nc6125h	2	78	our	our	PRON
h128nc6125h	2	79	modified	modify	VERB
h128nc6125h	2	80	wet	wet	ADJ
h128nc6125h	2	81	thermal	thermal	ADJ
h128nc6125h	2	82	method	method	NOUN
h128nc6125h	2	83	are	be	AUX
h128nc6125h	2	84	shown	show	VERB
h128nc6125h	2	85	capable	capable	ADJ
h128nc6125h	2	86	of	of	ADP
h128nc6125h	2	87	improving	improve	VERB
h128nc6125h	2	88	upon	upon	SCONJ
h128nc6125h	2	89	existing	exist	VERB
h128nc6125h	2	90	wafer	wafer	NOUN
h128nc6125h	2	91	bonding	bonding	NOUN
h128nc6125h	2	92	techniques	technique	NOUN
h128nc6125h	2	93	.	.	PUNCT
h128nc6125h	3	1	the	the	DET
h128nc6125h	3	2	two	two	NUM
h128nc6125h	3	3	flagship	flagship	NOUN
h128nc6125h	3	4	compound	compound	NOUN
h128nc6125h	3	5	semiconductors	semiconductor	NOUN
h128nc6125h	3	6	,	,	PUNCT
h128nc6125h	3	7	gaas	gaas	NOUN
h128nc6125h	3	8	and	and	CCONJ
h128nc6125h	3	9	inp	inp	NOUN
h128nc6125h	3	10	,	,	PUNCT
h128nc6125h	3	11	have	have	AUX
h128nc6125h	3	12	been	be	AUX
h128nc6125h	3	13	successfully	successfully	ADV
h128nc6125h	3	14	bonded	bond	VERB
h128nc6125h	3	15	to	to	ADP
h128nc6125h	3	16	si	si	PROPN
h128nc6125h	3	17	substrates	substrate	NOUN
h128nc6125h	3	18	using	use	VERB
h128nc6125h	3	19	a	a	DET
h128nc6125h	3	20	iii	iii	NUM
h128nc6125h	3	21	-	-	PUNCT
h128nc6125h	3	22	v	v	NOUN
h128nc6125h	3	23	native	native	ADJ
h128nc6125h	3	24	oxide	oxide	NOUN
h128nc6125h	3	25	as	as	ADP
h128nc6125h	3	26	the	the	DET
h128nc6125h	3	27	intermediate	intermediate	ADJ
h128nc6125h	3	28	layer	layer	NOUN
h128nc6125h	3	29	,	,	PUNCT
h128nc6125h	3	30	with	with	ADP
h128nc6125h	3	31	potential	potential	ADJ
h128nc6125h	3	32	applications	application	NOUN
h128nc6125h	3	33	in	in	ADP
h128nc6125h	3	34	erbium	erbium	NOUN
h128nc6125h	3	35	doped	doped	NOUN
h128nc6125h	3	36	waveguide	waveguide	NOUN
h128nc6125h	3	37	amplifier	amplifier	ADJ
h128nc6125h	3	38	fabrication	fabrication	NOUN
h128nc6125h	3	39	and	and	CCONJ
h128nc6125h	3	40	in	in	ADP
h128nc6125h	3	41	the	the	DET
h128nc6125h	3	42	emerging	emerge	VERB
h128nc6125h	3	43	silicon	silicon	NOUN
h128nc6125h	3	44	photonics	photonic	NOUN
h128nc6125h	3	45	field	field	NOUN
h128nc6125h	3	46	.	.	PUNCT
h128nc6125h	4	1	next	next	ADV
h128nc6125h	4	2	,	,	PUNCT
h128nc6125h	4	3	an	an	DET
h128nc6125h	4	4	unexpected	unexpected	ADJ
h128nc6125h	4	5	gallium	gallium	NOUN
h128nc6125h	4	6	oxide	oxide	NOUN
h128nc6125h	4	7	film	film	NOUN
h128nc6125h	4	8	transfer	transfer	NOUN
h128nc6125h	4	9	phenomenon	phenomenon	NOUN
h128nc6125h	4	10	observed	observe	VERB
h128nc6125h	4	11	during	during	ADP
h128nc6125h	4	12	wafer	wafer	NOUN
h128nc6125h	4	13	bonding	bonding	NOUN
h128nc6125h	4	14	of	of	ADP
h128nc6125h	4	15	gaas	gaas	NOUN
h128nc6125h	4	16	to	to	ADP
h128nc6125h	4	17	si	si	PROPN
h128nc6125h	4	18	has	have	AUX
h128nc6125h	4	19	generated	generate	VERB
h128nc6125h	4	20	a	a	DET
h128nc6125h	4	21	promising	promising	ADJ
h128nc6125h	4	22	future	future	ADJ
h128nc6125h	4	23	research	research	NOUN
h128nc6125h	4	24	opportunity	opportunity	NOUN
h128nc6125h	4	25	in	in	ADP
h128nc6125h	4	26	the	the	DET
h128nc6125h	4	27	emerging	emerge	VERB
h128nc6125h	4	28	hot	hot	ADJ
h128nc6125h	4	29	area	area	NOUN
h128nc6125h	4	30	of	of	ADP
h128nc6125h	4	31	beta	beta	NOUN
h128nc6125h	4	32	-	-	PUNCT
h128nc6125h	4	33	phase	phase	NOUN
h128nc6125h	4	34	gallium	gallium	NOUN
h128nc6125h	4	35	oxide	oxide	NOUN
h128nc6125h	4	36	(	(	PUNCT
h128nc6125h	4	37	b	b	NOUN
h128nc6125h	4	38	-	-	PUNCT
h128nc6125h	4	39	ga2o3	ga2o3	NOUN
h128nc6125h	4	40	)	)	PUNCT
h128nc6125h	4	41	as	as	ADP
h128nc6125h	4	42	a	a	DET
h128nc6125h	4	43	wide	wide	ADJ
h128nc6125h	4	44	bandgap	bandgap	NOUN
h128nc6125h	4	45	semiconductor	semiconductor	NOUN
h128nc6125h	4	46	material	material	NOUN
h128nc6125h	4	47	,	,	PUNCT
h128nc6125h	4	48	useful	useful	ADJ
h128nc6125h	4	49	for	for	ADP
h128nc6125h	4	50	devices	device	NOUN
h128nc6125h	4	51	such	such	ADJ
h128nc6125h	4	52	as	as	ADP
h128nc6125h	4	53	high	high	ADJ
h128nc6125h	4	54	-	-	PUNCT
h128nc6125h	4	55	power	power	NOUN
h128nc6125h	4	56	transistors	transistor	NOUN
h128nc6125h	4	57	,	,	PUNCT
h128nc6125h	4	58	solar	solar	ADJ
h128nc6125h	4	59	blind	blind	ADJ
h128nc6125h	4	60	photodetectors	photodetector	NOUN
h128nc6125h	4	61	,	,	PUNCT
h128nc6125h	4	62	and	and	CCONJ
h128nc6125h	4	63	gas	gas	NOUN
h128nc6125h	4	64	sensing	sense	VERB
h128nc6125h	4	65	devices	device	NOUN
h128nc6125h	4	66	.	.	PUNCT
h128nc6125h	5	1	furthermore	furthermore	ADV
h128nc6125h	5	2	,	,	PUNCT
h128nc6125h	5	3	we	we	PRON
h128nc6125h	5	4	present	present	VERB
h128nc6125h	5	5	detailed	detailed	ADJ
h128nc6125h	5	6	preliminary	preliminary	ADJ
h128nc6125h	5	7	studies	study	NOUN
h128nc6125h	5	8	on	on	ADP
h128nc6125h	5	9	the	the	DET
h128nc6125h	5	10	selective	selective	ADJ
h128nc6125h	5	11	core	core	NOUN
h128nc6125h	5	12	oxidation	oxidation	NOUN
h128nc6125h	5	13	of	of	ADP
h128nc6125h	5	14	telecommunications	telecommunications	NOUN
h128nc6125h	5	15	wavelength	wavelength	NOUN
h128nc6125h	5	16	inp	inp	NOUN
h128nc6125h	5	17	-	-	PUNCT
h128nc6125h	5	18	based	base	VERB
h128nc6125h	5	19	algainas	algainas	PROPN
h128nc6125h	5	20	laser	laser	NOUN
h128nc6125h	5	21	heterostructure	heterostructure	NOUN
h128nc6125h	5	22	waveguides	waveguide	NOUN
h128nc6125h	5	23	,	,	PUNCT
h128nc6125h	5	24	including	include	VERB
h128nc6125h	5	25	two	two	NUM
h128nc6125h	5	26	methods	method	NOUN
h128nc6125h	5	27	for	for	ADP
h128nc6125h	5	28	overcoming	overcome	VERB
h128nc6125h	5	29	the	the	DET
h128nc6125h	5	30	severe	severe	ADJ
h128nc6125h	5	31	,	,	PUNCT
h128nc6125h	5	32	longstanding	longstanding	ADJ
h128nc6125h	5	33	high	high	ADJ
h128nc6125h	5	34	temperature	temperature	NOUN
h128nc6125h	5	35	process	process	NOUN
h128nc6125h	5	36	limitations	limitation	NOUN
h128nc6125h	5	37	caused	cause	VERB
h128nc6125h	5	38	by	by	ADP
h128nc6125h	5	39	inp	inp	PROPN
h128nc6125h	5	40	dissociation	dissociation	NOUN
h128nc6125h	5	41	.	.	PUNCT
h128nc6125h	6	1	using	use	VERB
h128nc6125h	6	2	the	the	DET
h128nc6125h	6	3	protection	protection	NOUN
h128nc6125h	6	4	of	of	ADP
h128nc6125h	6	5	ingaas	ingaas	NOUN
h128nc6125h	6	6	epitaxial	epitaxial	ADJ
h128nc6125h	6	7	regrowth	regrowth	NOUN
h128nc6125h	6	8	or	or	CCONJ
h128nc6125h	6	9	hfo2	hfo2	NOUN
h128nc6125h	6	10	atomic	atomic	ADJ
h128nc6125h	6	11	layer	layer	NOUN
h128nc6125h	6	12	deposition	deposition	NOUN
h128nc6125h	6	13	encapsulation	encapsulation	NOUN
h128nc6125h	6	14	,	,	PUNCT
h128nc6125h	6	15	we	we	PRON
h128nc6125h	6	16	have	have	AUX
h128nc6125h	6	17	successfully	successfully	ADV
h128nc6125h	6	18	selectively	selectively	ADV
h128nc6125h	6	19	oxidized	oxidize	VERB
h128nc6125h	6	20	the	the	DET
h128nc6125h	6	21	waveguide	waveguide	NOUN
h128nc6125h	6	22	core	core	NOUN
h128nc6125h	6	23	,	,	PUNCT
h128nc6125h	6	24	shrinking	shrink	VERB
h128nc6125h	6	25	the	the	DET
h128nc6125h	6	26	optical	optical	ADJ
h128nc6125h	6	27	confinement	confinement	NOUN
h128nc6125h	6	28	region	region	NOUN
h128nc6125h	6	29	well	well	ADV
h128nc6125h	6	30	below	below	ADP
h128nc6125h	6	31	the	the	DET
h128nc6125h	6	32	width	width	NOUN
h128nc6125h	6	33	of	of	ADP
h128nc6125h	6	34	the	the	DET
h128nc6125h	6	35	lithographically	lithographically	ADV
h128nc6125h	6	36	-	-	PUNCT
h128nc6125h	6	37	defined	define	VERB
h128nc6125h	6	38	etched	etch	VERB
h128nc6125h	6	39	ridge	ridge	NOUN
h128nc6125h	6	40	to	to	PART
h128nc6125h	6	41	achieve	achieve	VERB
h128nc6125h	6	42	a	a	DET
h128nc6125h	6	43	single	single	ADJ
h128nc6125h	6	44	mode	mode	NOUN
h128nc6125h	6	45	waveguide	waveguide	NOUN
h128nc6125h	6	46	geometry	geometry	NOUN
h128nc6125h	6	47	suitable	suitable	ADJ
h128nc6125h	6	48	for	for	ADP
h128nc6125h	6	49	the	the	DET
h128nc6125h	6	50	design	design	NOUN
h128nc6125h	6	51	of	of	ADP
h128nc6125h	6	52	both	both	CCONJ
h128nc6125h	6	53	active	active	ADJ
h128nc6125h	6	54	and	and	CCONJ
h128nc6125h	6	55	passive	passive	ADJ
h128nc6125h	6	56	algainas	algaina	NOUN
h128nc6125h	6	57	/	/	SYM
h128nc6125h	6	58	inp	inp	NOUN
h128nc6125h	6	59	telecom	telecom	NOUN
h128nc6125h	6	60	wavelength	wavelength	NOUN
h128nc6125h	6	61	devices	device	NOUN
h128nc6125h	6	62	.	.	PUNCT