id	sid	tid	token	lemma	pos
ft848p61j5d	1	1	electric	electric	ADJ
ft848p61j5d	1	2	double	double	ADJ
ft848p61j5d	1	3	layer	layer	NOUN
ft848p61j5d	1	4	(	(	PUNCT
ft848p61j5d	1	5	edl	edl	PROPN
ft848p61j5d	1	6	)	)	PUNCT
ft848p61j5d	1	7	doping	dope	VERB
ft848p61j5d	1	8	of	of	ADP
ft848p61j5d	1	9	transition	transition	NOUN
ft848p61j5d	1	10	metal	metal	NOUN
ft848p61j5d	1	11	dichalcogenide	dichalcogenide	PROPN
ft848p61j5d	1	12	(	(	PUNCT
ft848p61j5d	1	13	tmd	tmd	NOUN
ft848p61j5d	1	14	)	)	PUNCT
ft848p61j5d	1	15	channels	channel	NOUN
ft848p61j5d	1	16	in	in	ADP
ft848p61j5d	1	17	planar	planar	NOUN
ft848p61j5d	1	18	,	,	PUNCT
ft848p61j5d	1	19	nanoribbon	nanoribbon	NOUN
ft848p61j5d	1	20	,	,	PUNCT
ft848p61j5d	1	21	and	and	CCONJ
ft848p61j5d	1	22	nanotube	nanotube	NOUN
ft848p61j5d	1	23	geometries	geometry	NOUN
ft848p61j5d	1	24	,	,	PUNCT
ft848p61j5d	1	25	have	have	AUX
ft848p61j5d	1	26	been	be	AUX
ft848p61j5d	1	27	explored	explore	VERB
ft848p61j5d	1	28	for	for	ADP
ft848p61j5d	1	29	the	the	DET
ft848p61j5d	1	30	realization	realization	NOUN
ft848p61j5d	1	31	of	of	ADP
ft848p61j5d	1	32	tunnel	tunnel	NOUN
ft848p61j5d	1	33	field	field	NOUN
ft848p61j5d	1	34	effect	effect	NOUN
ft848p61j5d	1	35	transistors	transistor	NOUN
ft848p61j5d	1	36	(	(	PUNCT
ft848p61j5d	1	37	tfets	tfets	X
ft848p61j5d	1	38	)	)	PUNCT
ft848p61j5d	1	39	.	.	PUNCT
ft848p61j5d	2	1	the	the	DET
ft848p61j5d	2	2	channel	channel	NOUN
ft848p61j5d	2	3	materials	material	NOUN
ft848p61j5d	2	4	included	include	VERB
ft848p61j5d	2	5	commercially	commercially	ADV
ft848p61j5d	2	6	-	-	PUNCT
ft848p61j5d	2	7	supplied	supply	VERB
ft848p61j5d	2	8	exfoliated	exfoliate	VERB
ft848p61j5d	2	9	materials	material	NOUN
ft848p61j5d	2	10	,	,	PUNCT
ft848p61j5d	2	11	synthesized	synthesize	VERB
ft848p61j5d	2	12	materials	material	NOUN
ft848p61j5d	2	13	grown	grow	VERB
ft848p61j5d	2	14	by	by	ADP
ft848p61j5d	2	15	metal	metal	NOUN
ft848p61j5d	2	16	organic	organic	ADJ
ft848p61j5d	2	17	chemical	chemical	NOUN
ft848p61j5d	2	18	vapor	vapor	NOUN
ft848p61j5d	2	19	deposition	deposition	NOUN
ft848p61j5d	2	20	and	and	CCONJ
ft848p61j5d	2	21	nanostructured	nanostructure	VERB
ft848p61j5d	2	22	materials	material	NOUN
ft848p61j5d	2	23	grown	grow	VERB
ft848p61j5d	2	24	by	by	ADP
ft848p61j5d	2	25	chemical	chemical	NOUN
ft848p61j5d	2	26	vapor	vapor	NOUN
ft848p61j5d	2	27	transport	transport	NOUN
ft848p61j5d	2	28	(	(	PUNCT
ft848p61j5d	2	29	cvt).the	cvt).the	DET
ft848p61j5d	2	30	solid	solid	ADJ
ft848p61j5d	2	31	polymer	polymer	NOUN
ft848p61j5d	2	32	,	,	PUNCT
ft848p61j5d	2	33	polyethylene	polyethylene	NOUN
ft848p61j5d	2	34	oxide	oxide	NOUN
ft848p61j5d	2	35	with	with	ADP
ft848p61j5d	2	36	the	the	DET
ft848p61j5d	2	37	salt	salt	NOUN
ft848p61j5d	2	38	,	,	PUNCT
ft848p61j5d	2	39	cesium	cesium	NOUN
ft848p61j5d	2	40	perchlorate	perchlorate	NOUN
ft848p61j5d	2	41	(	(	PUNCT
ft848p61j5d	2	42	peo	peo	PROPN
ft848p61j5d	2	43	:	:	PUNCT
ft848p61j5d	2	44	csclo4	csclo4	PROPN
ft848p61j5d	2	45	)	)	PUNCT
ft848p61j5d	2	46	was	be	AUX
ft848p61j5d	2	47	utilized	utilize	VERB
ft848p61j5d	2	48	on	on	ADP
ft848p61j5d	2	49	three	three	NUM
ft848p61j5d	2	50	different	different	ADJ
ft848p61j5d	2	51	tmds	tmds	NOUN
ft848p61j5d	2	52	:	:	PUNCT
ft848p61j5d	2	53	wse2	wse2	PROPN
ft848p61j5d	2	54	,	,	PUNCT
ft848p61j5d	2	55	mos2	mos2	PROPN
ft848p61j5d	2	56	and	and	CCONJ
ft848p61j5d	2	57	ws2	ws2	PROPN
ft848p61j5d	2	58	.	.	PUNCT
ft848p61j5d	3	1	on	on	ADP
ft848p61j5d	3	2	exfoliated	exfoliate	VERB
ft848p61j5d	3	3	wse2	wse2	PROPN
ft848p61j5d	3	4	channels	channel	NOUN
ft848p61j5d	3	5	,	,	PUNCT
ft848p61j5d	3	6	sheet	sheet	NOUN
ft848p61j5d	3	7	carrier	carrier	NOUN
ft848p61j5d	3	8	density	density	NOUN
ft848p61j5d	3	9	and	and	CCONJ
ft848p61j5d	3	10	current	current	ADJ
ft848p61j5d	3	11	density	density	NOUN
ft848p61j5d	3	12	as	as	ADV
ft848p61j5d	3	13	high	high	ADJ
ft848p61j5d	3	14	as	as	ADP
ft848p61j5d	3	15	(	(	PUNCT
ft848p61j5d	3	16	4.9±1.9	4.9±1.9	NUM
ft848p61j5d	3	17	)	)	PUNCT
ft848p61j5d	3	18	x	x	PUNCT
ft848p61j5d	3	19	10	10	NUM
ft848p61j5d	3	20	^	^	NUM
ft848p61j5d	3	21	13	13	NUM
ft848p61j5d	3	22	cm-2	cm-2	PROPN
ft848p61j5d	3	23	and	and	CCONJ
ft848p61j5d	3	24	58	58	NUM
ft848p61j5d	3	25	μa	μa	NOUN
ft848p61j5d	3	26	/	/	SYM
ft848p61j5d	3	27	μm	μm	NOUN
ft848p61j5d	3	28	for	for	ADP
ft848p61j5d	3	29	electrons	electron	NOUN
ft848p61j5d	3	30	,	,	PUNCT
ft848p61j5d	3	31	and	and	CCONJ
ft848p61j5d	3	32	(	(	PUNCT
ft848p61j5d	3	33	3.5±1.9	3.5±1.9	NUM
ft848p61j5d	3	34	)	)	PUNCT
ft848p61j5d	3	35	x	x	PUNCT
ft848p61j5d	3	36	10	10	NUM
ft848p61j5d	3	37	^	^	NUM
ft848p61j5d	3	38	13	13	NUM
ft848p61j5d	3	39	cm-2	cm-2	PROPN
ft848p61j5d	3	40	and	and	CCONJ
ft848p61j5d	3	41	50	50	NUM
ft848p61j5d	3	42	μa	μa	NOUN
ft848p61j5d	3	43	/	/	SYM
ft848p61j5d	3	44	μm	μm	NOUN
ft848p61j5d	3	45	for	for	ADP
ft848p61j5d	3	46	holes	hole	NOUN
ft848p61j5d	3	47	were	be	AUX
ft848p61j5d	3	48	achieved	achieve	VERB
ft848p61j5d	3	49	at	at	ADP
ft848p61j5d	3	50	a	a	DET
ft848p61j5d	3	51	channel	channel	NOUN
ft848p61j5d	3	52	length	length	NOUN
ft848p61j5d	3	53	of	of	ADP
ft848p61j5d	3	54	3.5	3.5	NUM
ft848p61j5d	3	55	μm	μm	NOUN
ft848p61j5d	3	56	,	,	PUNCT
ft848p61j5d	3	57	thickness	thickness	NOUN
ft848p61j5d	3	58	of	of	ADP
ft848p61j5d	3	59	6.5	6.5	NUM
ft848p61j5d	3	60	nm	nm	NOUN
ft848p61j5d	3	61	,	,	PUNCT
ft848p61j5d	3	62	and	and	CCONJ
ft848p61j5d	3	63	a	a	DET
ft848p61j5d	3	64	drain	drain	NOUN
ft848p61j5d	3	65	-	-	PUNCT
ft848p61j5d	3	66	source	source	NOUN
ft848p61j5d	3	67	bias	bias	NOUN
ft848p61j5d	3	68	of	of	ADP
ft848p61j5d	3	69	2	2	NUM
ft848p61j5d	3	70	v.edl	v.edl	PROPN
ft848p61j5d	3	71	p	p	NOUN
ft848p61j5d	3	72	-	-	PUNCT
ft848p61j5d	3	73	i	i	NOUN
ft848p61j5d	3	74	-	-	PUNCT
ft848p61j5d	3	75	n	n	NOUN
ft848p61j5d	3	76	junctions	junction	NOUN
ft848p61j5d	3	77	were	be	AUX
ft848p61j5d	3	78	created	create	VERB
ft848p61j5d	3	79	in	in	ADP
ft848p61j5d	3	80	exfoliated	exfoliate	VERB
ft848p61j5d	3	81	wse2	wse2	PROPN
ft848p61j5d	3	82	fet	fet	PROPN
ft848p61j5d	3	83	channels	channel	NOUN
ft848p61j5d	3	84	without	without	ADP
ft848p61j5d	3	85	the	the	DET
ft848p61j5d	3	86	use	use	NOUN
ft848p61j5d	3	87	of	of	ADP
ft848p61j5d	3	88	side	side	NOUN
ft848p61j5d	3	89	gates	gate	NOUN
ft848p61j5d	3	90	.	.	PUNCT
ft848p61j5d	4	1	a	a	DET
ft848p61j5d	4	2	source	source	NOUN
ft848p61j5d	4	3	/	/	SYM
ft848p61j5d	4	4	drain	drain	NOUN
ft848p61j5d	4	5	bias	bias	NOUN
ft848p61j5d	4	6	applied	apply	VERB
ft848p61j5d	4	7	at	at	ADP
ft848p61j5d	4	8	room	room	NOUN
ft848p61j5d	4	9	temperature	temperature	NOUN
ft848p61j5d	4	10	creates	create	VERB
ft848p61j5d	4	11	a	a	DET
ft848p61j5d	4	12	channel	channel	NOUN
ft848p61j5d	4	13	field	field	NOUN
ft848p61j5d	4	14	which	which	PRON
ft848p61j5d	4	15	positions	position	VERB
ft848p61j5d	4	16	cs+	cs+	NOUN
ft848p61j5d	4	17	cations	cation	NOUN
ft848p61j5d	4	18	and	and	CCONJ
ft848p61j5d	4	19	clo4−	clo4−	VERB
ft848p61j5d	4	20	anions	anion	NOUN
ft848p61j5d	4	21	at	at	ADP
ft848p61j5d	4	22	the	the	DET
ft848p61j5d	4	23	negative	negative	ADJ
ft848p61j5d	4	24	and	and	CCONJ
ft848p61j5d	4	25	positive	positive	ADJ
ft848p61j5d	4	26	biased	biased	ADJ
ft848p61j5d	4	27	contacts	contact	NOUN
ft848p61j5d	4	28	respectively	respectively	ADV
ft848p61j5d	4	29	.	.	PUNCT
ft848p61j5d	5	1	the	the	DET
ft848p61j5d	5	2	ions	ion	NOUN
ft848p61j5d	5	3	induce	induce	VERB
ft848p61j5d	5	4	electrons	electron	NOUN
ft848p61j5d	5	5	and	and	CCONJ
ft848p61j5d	5	6	holes	hole	NOUN
ft848p61j5d	5	7	respectively	respectively	ADV
ft848p61j5d	5	8	to	to	PART
ft848p61j5d	5	9	form	form	VERB
ft848p61j5d	5	10	a	a	DET
ft848p61j5d	5	11	p	p	NOUN
ft848p61j5d	5	12	-	-	PUNCT
ft848p61j5d	5	13	i	i	NOUN
ft848p61j5d	5	14	-	-	PUNCT
ft848p61j5d	5	15	n	n	NOUN
ft848p61j5d	5	16	junction	junction	NOUN
ft848p61j5d	5	17	.	.	PUNCT
ft848p61j5d	6	1	cooling	cool	VERB
ft848p61j5d	6	2	below	below	ADP
ft848p61j5d	6	3	250	250	NUM
ft848p61j5d	6	4	k	k	PROPN
ft848p61j5d	6	5	locks	lock	VERB
ft848p61j5d	6	6	the	the	DET
ft848p61j5d	6	7	ions	ion	NOUN
ft848p61j5d	6	8	in	in	ADP
ft848p61j5d	6	9	place	place	NOUN
ft848p61j5d	6	10	for	for	ADP
ft848p61j5d	6	11	current	current	ADJ
ft848p61j5d	6	12	-	-	PUNCT
ft848p61j5d	6	13	voltage	voltage	NOUN
ft848p61j5d	6	14	measurements	measurement	NOUN
ft848p61j5d	6	15	.	.	PUNCT
ft848p61j5d	7	1	the	the	DET
ft848p61j5d	7	2	devices	device	NOUN
ft848p61j5d	7	3	show	show	VERB
ft848p61j5d	7	4	clear	clear	ADJ
ft848p61j5d	7	5	rectification	rectification	NOUN
ft848p61j5d	7	6	with	with	ADP
ft848p61j5d	7	7	a	a	DET
ft848p61j5d	7	8	forward	forward	ADV
ft848p61j5d	7	9	-	-	PUNCT
ft848p61j5d	7	10	to	to	ADP
ft848p61j5d	7	11	-	-	PUNCT
ft848p61j5d	7	12	reverse	reverse	VERB
ft848p61j5d	7	13	current	current	ADJ
ft848p61j5d	7	14	ratio	ratio	NOUN
ft848p61j5d	7	15	of	of	ADP
ft848p61j5d	7	16	2000	2000	NUM
ft848p61j5d	7	17	to	to	ADP
ft848p61j5d	7	18	28,000.as	28,000.as	NUM
ft848p61j5d	7	19	a	a	DET
ft848p61j5d	7	20	part	part	NOUN
ft848p61j5d	7	21	of	of	ADP
ft848p61j5d	7	22	the	the	DET
ft848p61j5d	7	23	tfet	tfet	NOUN
ft848p61j5d	7	24	process	process	NOUN
ft848p61j5d	7	25	development	development	NOUN
ft848p61j5d	7	26	,	,	PUNCT
ft848p61j5d	7	27	two	two	NUM
ft848p61j5d	7	28	techniques	technique	NOUN
ft848p61j5d	7	29	were	be	AUX
ft848p61j5d	7	30	utilized	utilize	VERB
ft848p61j5d	7	31	to	to	PART
ft848p61j5d	7	32	deposit	deposit	VERB
ft848p61j5d	7	33	gate	gate	NOUN
ft848p61j5d	7	34	dielectrics	dielectric	NOUN
ft848p61j5d	7	35	on	on	ADP
ft848p61j5d	7	36	tmd	tmd	NOUN
ft848p61j5d	7	37	channels	channel	NOUN
ft848p61j5d	7	38	:	:	PUNCT
ft848p61j5d	7	39	one	one	NUM
ft848p61j5d	7	40	suitable	suitable	ADJ
ft848p61j5d	7	41	for	for	ADP
ft848p61j5d	7	42	planar	planar	ADJ
ft848p61j5d	7	43	channel	channel	NOUN
ft848p61j5d	7	44	geometries	geometry	NOUN
ft848p61j5d	7	45	and	and	CCONJ
ft848p61j5d	7	46	the	the	DET
ft848p61j5d	7	47	other	other	ADJ
ft848p61j5d	7	48	suitable	suitable	ADJ
ft848p61j5d	7	49	for	for	ADP
ft848p61j5d	7	50	nonplanar	nonplanar	NOUN
ft848p61j5d	7	51	geometries	geometry	NOUN
ft848p61j5d	7	52	.	.	PUNCT
ft848p61j5d	8	1	in	in	ADP
ft848p61j5d	8	2	the	the	DET
ft848p61j5d	8	3	first	first	ADJ
ft848p61j5d	8	4	approach	approach	NOUN
ft848p61j5d	8	5	,	,	PUNCT
ft848p61j5d	8	6	monolayer	monolayer	NOUN
ft848p61j5d	8	7	titanyl	titanyl	PROPN
ft848p61j5d	8	8	phthalocyanine	phthalocyanine	NOUN
ft848p61j5d	8	9	(	(	PUNCT
ft848p61j5d	8	10	tiopc	tiopc	PROPN
ft848p61j5d	8	11	)	)	PUNCT
ft848p61j5d	8	12	was	be	AUX
ft848p61j5d	8	13	deposited	deposit	VERB
ft848p61j5d	8	14	by	by	ADP
ft848p61j5d	8	15	molecular	molecular	ADJ
ft848p61j5d	8	16	beam	beam	NOUN
ft848p61j5d	8	17	epitaxy	epitaxy	PROPN
ft848p61j5d	8	18	(	(	PUNCT
ft848p61j5d	8	19	mbe	mbe	PROPN
ft848p61j5d	8	20	)	)	PUNCT
ft848p61j5d	8	21	as	as	ADP
ft848p61j5d	8	22	a	a	DET
ft848p61j5d	8	23	seed	seed	NOUN
ft848p61j5d	8	24	layer	layer	NOUN
ft848p61j5d	8	25	for	for	ADP
ft848p61j5d	8	26	atomic	atomic	ADJ
ft848p61j5d	8	27	layer	layer	NOUN
ft848p61j5d	8	28	deposition	deposition	NOUN
ft848p61j5d	8	29	(	(	PUNCT
ft848p61j5d	8	30	ald	ald	PROPN
ft848p61j5d	8	31	)	)	PUNCT
ft848p61j5d	8	32	of	of	ADP
ft848p61j5d	8	33	al2o3	al2o3	NOUN
ft848p61j5d	8	34	on	on	ADP
ft848p61j5d	8	35	wse2	wse2	PROPN
ft848p61j5d	8	36	.	.	PUNCT
ft848p61j5d	9	1	in	in	ADP
ft848p61j5d	9	2	the	the	DET
ft848p61j5d	9	3	second	second	ADJ
ft848p61j5d	9	4	approach	approach	NOUN
ft848p61j5d	9	5	,	,	PUNCT
ft848p61j5d	9	6	which	which	PRON
ft848p61j5d	9	7	was	be	AUX
ft848p61j5d	9	8	suitable	suitable	ADJ
ft848p61j5d	9	9	for	for	ADP
ft848p61j5d	9	10	nonplanar	nonplanar	NOUN
ft848p61j5d	9	11	geometries	geometry	NOUN
ft848p61j5d	9	12	,	,	PUNCT
ft848p61j5d	9	13	a	a	DET
ft848p61j5d	9	14	gate	gate	NOUN
ft848p61j5d	9	15	dielectric	dielectric	NOUN
ft848p61j5d	9	16	was	be	AUX
ft848p61j5d	9	17	demonstrated	demonstrate	VERB
ft848p61j5d	9	18	by	by	ADP
ft848p61j5d	9	19	using	use	VERB
ft848p61j5d	9	20	a	a	DET
ft848p61j5d	9	21	low	low	ADJ
ft848p61j5d	9	22	-	-	PUNCT
ft848p61j5d	9	23	temperature	temperature	NOUN
ft848p61j5d	9	24	ald	ald	NOUN
ft848p61j5d	9	25	technique	technique	NOUN
ft848p61j5d	9	26	.	.	PUNCT