id	sid	tid	token	lemma	pos
cc08hd78w50	1	1	the	the	DET
cc08hd78w50	1	2	iii	iii	NOUN
cc08hd78w50	1	3	-	-	PUNCT
cc08hd78w50	1	4	nitrides	nitride	NOUN
cc08hd78w50	1	5	are	be	AUX
cc08hd78w50	1	6	direct	direct	ADJ
cc08hd78w50	1	7	band	band	NOUN
cc08hd78w50	1	8	gap	gap	NOUN
cc08hd78w50	1	9	semiconductors	semiconductor	NOUN
cc08hd78w50	1	10	that	that	PRON
cc08hd78w50	1	11	span	span	VERB
cc08hd78w50	1	12	a	a	DET
cc08hd78w50	1	13	large	large	ADJ
cc08hd78w50	1	14	range	range	NOUN
cc08hd78w50	1	15	of	of	ADP
cc08hd78w50	1	16	band	band	NOUN
cc08hd78w50	1	17	gaps	gap	NOUN
cc08hd78w50	1	18	from	from	ADP
cc08hd78w50	1	19	~0.6	~0.6	SPACE
cc08hd78w50	1	20	ev	ev	X
cc08hd78w50	1	21	(	(	PUNCT
cc08hd78w50	1	22	inn	inn	PROPN
cc08hd78w50	1	23	)	)	PUNCT
cc08hd78w50	1	24	to	to	ADP
cc08hd78w50	1	25	6.2	6.2	NUM
cc08hd78w50	1	26	ev	ev	ADJ
cc08hd78w50	1	27	(	(	PUNCT
cc08hd78w50	1	28	aln	aln	ADV
cc08hd78w50	1	29	)	)	PUNCT
cc08hd78w50	1	30	.	.	PUNCT
cc08hd78w50	2	1	in	in	ADP
cc08hd78w50	2	2	recent	recent	ADJ
cc08hd78w50	2	3	years	year	NOUN
cc08hd78w50	2	4	high	high	ADJ
cc08hd78w50	2	5	electron	electron	NOUN
cc08hd78w50	2	6	mobility	mobility	NOUN
cc08hd78w50	2	7	transistors	transistor	NOUN
cc08hd78w50	2	8	(	(	PUNCT
cc08hd78w50	2	9	hemts	hemts	PROPN
cc08hd78w50	2	10	)	)	PUNCT
cc08hd78w50	2	11	based	base	VERB
cc08hd78w50	2	12	on	on	ADP
cc08hd78w50	2	13	iii	iii	NUM
cc08hd78w50	2	14	-	-	PUNCT
cc08hd78w50	2	15	nitride	nitride	NOUN
cc08hd78w50	2	16	semiconductors	semiconductor	NOUN
cc08hd78w50	2	17	have	have	AUX
cc08hd78w50	2	18	proved	prove	VERB
cc08hd78w50	2	19	capable	capable	ADJ
cc08hd78w50	2	20	of	of	ADP
cc08hd78w50	2	21	high	high	ADJ
cc08hd78w50	2	22	power	power	NOUN
cc08hd78w50	2	23	,	,	PUNCT
cc08hd78w50	2	24	high	high	ADJ
cc08hd78w50	2	25	voltage	voltage	NOUN
cc08hd78w50	2	26	and	and	CCONJ
cc08hd78w50	2	27	high	high	ADJ
cc08hd78w50	2	28	frequency	frequency	NOUN
cc08hd78w50	2	29	operation	operation	NOUN
cc08hd78w50	2	30	.	.	PUNCT
cc08hd78w50	3	1	integration	integration	NOUN
cc08hd78w50	3	2	of	of	ADP
cc08hd78w50	3	3	ald	ald	PROPN
cc08hd78w50	3	4	oxides	oxides	PROPN
cc08hd78w50	3	5	with	with	ADP
cc08hd78w50	3	6	gan	gan	PROPN
cc08hd78w50	3	7	will	will	AUX
cc08hd78w50	3	8	enable	enable	VERB
cc08hd78w50	3	9	lower	low	ADJ
cc08hd78w50	3	10	gate	gate	NOUN
cc08hd78w50	3	11	leakage	leakage	NOUN
cc08hd78w50	3	12	currents	current	NOUN
cc08hd78w50	3	13	,	,	PUNCT
cc08hd78w50	3	14	high	high	ADJ
cc08hd78w50	3	15	breakdown	breakdown	NOUN
cc08hd78w50	3	16	voltages	voltage	NOUN
cc08hd78w50	3	17	,	,	PUNCT
cc08hd78w50	3	18	and	and	CCONJ
cc08hd78w50	3	19	surface	surface	NOUN
cc08hd78w50	3	20	passivation	passivation	NOUN
cc08hd78w50	3	21	of	of	ADP
cc08hd78w50	3	22	hemts	hemts	PROPN
cc08hd78w50	3	23	.	.	PUNCT
cc08hd78w50	4	1	in	in	ADP
cc08hd78w50	4	2	this	this	DET
cc08hd78w50	4	3	work	work	NOUN
cc08hd78w50	4	4	we	we	PRON
cc08hd78w50	4	5	present	present	VERB
cc08hd78w50	4	6	a	a	DET
cc08hd78w50	4	7	comprehensive	comprehensive	ADJ
cc08hd78w50	4	8	characterization	characterization	NOUN
cc08hd78w50	4	9	of	of	ADP
cc08hd78w50	4	10	aln	aln	PROPN
cc08hd78w50	4	11	/	/	SYM
cc08hd78w50	4	12	gan	gan	PROPN
cc08hd78w50	4	13	mos	mos	PROPN
cc08hd78w50	4	14	-	-	PROPN
cc08hd78w50	4	15	hemt	hemt	PROPN
cc08hd78w50	4	16	(	(	PUNCT
cc08hd78w50	4	17	grown	grow	VERB
cc08hd78w50	4	18	by	by	ADP
cc08hd78w50	4	19	pambe	pambe	ADJ
cc08hd78w50	4	20	)	)	PUNCT
cc08hd78w50	4	21	gate	gate	NOUN
cc08hd78w50	4	22	stacks	stack	NOUN
cc08hd78w50	4	23	with	with	ADP
cc08hd78w50	4	24	ald	ald	PROPN
cc08hd78w50	4	25	al2o3	al2o3	PROPN
cc08hd78w50	4	26	of	of	ADP
cc08hd78w50	4	27	various	various	ADJ
cc08hd78w50	4	28	thicknesses	thickness	NOUN
cc08hd78w50	4	29	.	.	PUNCT
cc08hd78w50	5	1	through	through	ADP
cc08hd78w50	5	2	capacitance	capacitance	NOUN
cc08hd78w50	5	3	-	-	PUNCT
cc08hd78w50	5	4	voltage	voltage	NOUN
cc08hd78w50	5	5	and	and	CCONJ
cc08hd78w50	5	6	hall	hall	NOUN
cc08hd78w50	5	7	-	-	PUNCT
cc08hd78w50	5	8	effect	effect	NOUN
cc08hd78w50	5	9	measurements	measurement	NOUN
cc08hd78w50	5	10	,	,	PUNCT
cc08hd78w50	5	11	we	we	PRON
cc08hd78w50	5	12	find	find	VERB
cc08hd78w50	5	13	the	the	DET
cc08hd78w50	5	14	presence	presence	NOUN
cc08hd78w50	5	15	and	and	CCONJ
cc08hd78w50	5	16	propose	propose	VERB
cc08hd78w50	5	17	an	an	DET
cc08hd78w50	5	18	origin	origin	NOUN
cc08hd78w50	5	19	of	of	ADP
cc08hd78w50	5	20	benign	benign	ADJ
cc08hd78w50	5	21	donor	donor	NOUN
cc08hd78w50	5	22	-	-	PUNCT
cc08hd78w50	5	23	type	type	NOUN
cc08hd78w50	5	24	interface	interface	NOUN
cc08hd78w50	5	25	charge	charge	NOUN
cc08hd78w50	5	26	qit~	qit~	PUNCT
cc08hd78w50	6	1	6x1013	6x1013	PROPN
cc08hd78w50	6	2	cm-2	cm-2	NOUN
cc08hd78w50	6	3	at	at	ADP
cc08hd78w50	6	4	the	the	DET
cc08hd78w50	6	5	aln	aln	PROPN
cc08hd78w50	6	6	/	/	SYM
cc08hd78w50	6	7	al2o3	al2o3	NOUN
cc08hd78w50	6	8	junction	junction	NOUN
cc08hd78w50	6	9	,	,	PUNCT
cc08hd78w50	6	10	and	and	CCONJ
cc08hd78w50	6	11	relate	relate	VERB
cc08hd78w50	6	12	its	its	PRON
cc08hd78w50	6	13	presence	presence	NOUN
cc08hd78w50	6	14	to	to	ADP
cc08hd78w50	6	15	the	the	DET
cc08hd78w50	6	16	polarization	polarization	NOUN
cc08hd78w50	6	17	charges	charge	NOUN
cc08hd78w50	6	18	in	in	ADP
cc08hd78w50	6	19	aln	aln	PROPN
cc08hd78w50	6	20	.	.	PUNCT
cc08hd78w50	7	1	the	the	DET
cc08hd78w50	7	2	role	role	NOUN
cc08hd78w50	7	3	of	of	ADP
cc08hd78w50	7	4	ald	ald	PROPN
cc08hd78w50	7	5	oxygen	oxygen	NOUN
cc08hd78w50	7	6	layers	layer	NOUN
cc08hd78w50	7	7	as	as	ADP
cc08hd78w50	7	8	possible	possible	ADJ
cc08hd78w50	7	9	modulation	modulation	NOUN
cc08hd78w50	7	10	dopants	dopant	NOUN
cc08hd78w50	7	11	can	can	AUX
cc08hd78w50	7	12	offer	offer	VERB
cc08hd78w50	7	13	opportunities	opportunity	NOUN
cc08hd78w50	7	14	for	for	ADP
cc08hd78w50	7	15	various	various	ADJ
cc08hd78w50	7	16	innovative	innovative	ADJ
cc08hd78w50	7	17	designs	design	NOUN
cc08hd78w50	7	18	in	in	ADP
cc08hd78w50	7	19	iii	iii	NUM
cc08hd78w50	7	20	-	-	PUNCT
cc08hd78w50	7	21	nitride	nitride	NOUN
cc08hd78w50	7	22	electronic	electronic	ADJ
cc08hd78w50	7	23	devices	device	NOUN
cc08hd78w50	7	24	.	.	PUNCT
cc08hd78w50	8	1	most	most	ADV
cc08hd78w50	8	2	importantly	importantly	ADV
cc08hd78w50	8	3	by	by	ADP
cc08hd78w50	8	4	controlling	control	VERB
cc08hd78w50	8	5	the	the	DET
cc08hd78w50	8	6	effective	effective	ADJ
cc08hd78w50	8	7	qit	qit	NOUN
cc08hd78w50	8	8	(	(	PUNCT
cc08hd78w50	8	9	for	for	ADP
cc08hd78w50	8	10	example	example	NOUN
cc08hd78w50	8	11	by	by	ADP
cc08hd78w50	8	12	compensation	compensation	NOUN
cc08hd78w50	8	13	doping	doping	NOUN
cc08hd78w50	8	14	,	,	PUNCT
cc08hd78w50	8	15	or	or	CCONJ
cc08hd78w50	8	16	by	by	ADP
cc08hd78w50	8	17	varying	vary	VERB
cc08hd78w50	8	18	the	the	DET
cc08hd78w50	8	19	polarization	polarization	NOUN
cc08hd78w50	8	20	through	through	ADP
cc08hd78w50	8	21	the	the	DET
cc08hd78w50	8	22	composition	composition	NOUN
cc08hd78w50	8	23	)	)	PUNCT
cc08hd78w50	8	24	,	,	PUNCT
cc08hd78w50	8	25	pinch	pinch	NOUN
cc08hd78w50	8	26	-	-	PUNCT
cc08hd78w50	8	27	off	off	ADP
cc08hd78w50	8	28	voltage	voltage	NOUN
cc08hd78w50	8	29	vp	vp	NOUN
cc08hd78w50	8	30	can	can	AUX
cc08hd78w50	8	31	be	be	AUX
cc08hd78w50	8	32	made	make	VERB
cc08hd78w50	8	33	to	to	PART
cc08hd78w50	8	34	increase	increase	VERB
cc08hd78w50	8	35	,	,	PUNCT
cc08hd78w50	8	36	remain	remain	VERB
cc08hd78w50	8	37	independent	independent	ADJ
cc08hd78w50	8	38	,	,	PUNCT
cc08hd78w50	8	39	or	or	CCONJ
cc08hd78w50	8	40	decrease	decrease	VERB
cc08hd78w50	8	41	with	with	ADP
cc08hd78w50	8	42	dielectric	dielectric	ADJ
cc08hd78w50	8	43	thickness	thickness	NOUN
cc08hd78w50	8	44	tox.there	tox.there	PRON
cc08hd78w50	8	45	is	be	AUX
cc08hd78w50	8	46	a	a	DET
cc08hd78w50	8	47	strong	strong	ADJ
cc08hd78w50	8	48	recent	recent	ADJ
cc08hd78w50	8	49	interest	interest	NOUN
cc08hd78w50	8	50	in	in	ADP
cc08hd78w50	8	51	studying	study	VERB
cc08hd78w50	8	52	the	the	DET
cc08hd78w50	8	53	effect	effect	NOUN
cc08hd78w50	8	54	of	of	ADP
cc08hd78w50	8	55	magnetic	magnetic	ADJ
cc08hd78w50	8	56	interaction	interaction	NOUN
cc08hd78w50	8	57	of	of	ADP
cc08hd78w50	8	58	various	various	ADJ
cc08hd78w50	8	59	ferromagnetic	ferromagnetic	ADJ
cc08hd78w50	8	60	structures	structure	NOUN
cc08hd78w50	8	61	leading	lead	VERB
cc08hd78w50	8	62	the	the	DET
cc08hd78w50	8	63	pathway	pathway	NOUN
cc08hd78w50	8	64	for	for	ADP
cc08hd78w50	8	65	nanomagnet	nanomagnet	ADJ
cc08hd78w50	8	66	logic	logic	NOUN
cc08hd78w50	8	67	operation	operation	NOUN
cc08hd78w50	8	68	(	(	PUNCT
cc08hd78w50	8	69	nml	nml	PROPN
cc08hd78w50	8	70	)	)	PUNCT
cc08hd78w50	8	71	.	.	PUNCT
cc08hd78w50	9	1	however	however	ADV
cc08hd78w50	9	2	,	,	PUNCT
cc08hd78w50	9	3	there	there	PRON
cc08hd78w50	9	4	is	be	VERB
cc08hd78w50	9	5	a	a	DET
cc08hd78w50	9	6	very	very	ADV
cc08hd78w50	9	7	little	little	ADJ
cc08hd78w50	9	8	effort	effort	NOUN
cc08hd78w50	9	9	so	so	ADV
cc08hd78w50	9	10	far	far	ADV
cc08hd78w50	9	11	to	to	PART
cc08hd78w50	9	12	identify	identify	VERB
cc08hd78w50	9	13	the	the	DET
cc08hd78w50	9	14	potential	potential	ADJ
cc08hd78w50	9	15	effect	effect	NOUN
cc08hd78w50	9	16	of	of	ADP
cc08hd78w50	9	17	high	high	ADJ
cc08hd78w50	9	18	current	current	ADJ
cc08hd78w50	9	19	density	density	NOUN
cc08hd78w50	9	20	of	of	ADP
cc08hd78w50	9	21	iii	iii	NUM
cc08hd78w50	9	22	-	-	PUNCT
cc08hd78w50	9	23	nitride	nitride	NOUN
cc08hd78w50	9	24	heterostructure	heterostructure	NOUN
cc08hd78w50	9	25	on	on	ADP
cc08hd78w50	9	26	microanomagnetic	microanomagnetic	ADJ
cc08hd78w50	9	27	structures	structure	NOUN
cc08hd78w50	9	28	high	high	ADJ
cc08hd78w50	9	29	-	-	PUNCT
cc08hd78w50	9	30	current	current	ADJ
cc08hd78w50	9	31	drive	drive	NOUN
cc08hd78w50	9	32	nitride	nitride	NOUN
cc08hd78w50	9	33	devices	device	NOUN
cc08hd78w50	9	34	can	can	AUX
cc08hd78w50	9	35	potentially	potentially	ADV
cc08hd78w50	9	36	eliminate	eliminate	VERB
cc08hd78w50	9	37	the	the	DET
cc08hd78w50	9	38	need	need	NOUN
cc08hd78w50	9	39	for	for	ADP
cc08hd78w50	9	40	auxiliary	auxiliary	ADJ
cc08hd78w50	9	41	arrangements	arrangement	NOUN
cc08hd78w50	9	42	of	of	ADP
cc08hd78w50	9	43	switching	switch	VERB
cc08hd78w50	9	44	and	and	CCONJ
cc08hd78w50	9	45	may	may	AUX
cc08hd78w50	9	46	enable	enable	VERB
cc08hd78w50	9	47	the	the	DET
cc08hd78w50	9	48	integration	integration	NOUN
cc08hd78w50	9	49	of	of	ADP
cc08hd78w50	9	50	logic	logic	NOUN
cc08hd78w50	9	51	and	and	CCONJ
cc08hd78w50	9	52	memory	memory	NOUN
cc08hd78w50	9	53	in	in	ADP
cc08hd78w50	9	54	the	the	DET
cc08hd78w50	9	55	same	same	ADJ
cc08hd78w50	9	56	device	device	NOUN
cc08hd78w50	9	57	.	.	PUNCT
cc08hd78w50	10	1	the	the	DET
cc08hd78w50	10	2	successful	successful	ADJ
cc08hd78w50	10	3	integration	integration	NOUN
cc08hd78w50	10	4	of	of	ADP
cc08hd78w50	10	5	microano	microano	NOUN
cc08hd78w50	10	6	magnets	magnet	NOUN
cc08hd78w50	10	7	(	(	PUNCT
cc08hd78w50	10	8	supermalloy	supermalloy	NOUN
cc08hd78w50	10	9	made	make	VERB
cc08hd78w50	10	10	)	)	PUNCT
cc08hd78w50	10	11	with	with	ADP
cc08hd78w50	10	12	iii	iii	NUM
cc08hd78w50	10	13	-	-	PUNCT
cc08hd78w50	10	14	nitride	nitride	NOUN
cc08hd78w50	10	15	heterostructure	heterostructure	NOUN
cc08hd78w50	10	16	and	and	CCONJ
cc08hd78w50	10	17	the	the	DET
cc08hd78w50	10	18	ability	ability	NOUN
cc08hd78w50	10	19	of	of	ADP
cc08hd78w50	10	20	imaging	image	VERB
cc08hd78w50	10	21	the	the	DET
cc08hd78w50	10	22	single	single	ADJ
cc08hd78w50	10	23	/	/	SYM
cc08hd78w50	10	24	multi	multi	NOUN
cc08hd78w50	10	25	-	-	NOUN
cc08hd78w50	10	26	domain	domain	NOUN
cc08hd78w50	10	27	featured	feature	VERB
cc08hd78w50	10	28	nano	nano	NOUN
cc08hd78w50	10	29	/	/	SYM
cc08hd78w50	10	30	micromagnets	micromagnet	NOUN
cc08hd78w50	10	31	on	on	ADP
cc08hd78w50	10	32	iii	iii	NOUN
cc08hd78w50	10	33	-	-	PUNCT
cc08hd78w50	10	34	nitrides	nitride	NOUN
cc08hd78w50	10	35	presented	present	VERB
cc08hd78w50	10	36	in	in	ADP
cc08hd78w50	10	37	this	this	DET
cc08hd78w50	10	38	work	work	NOUN
cc08hd78w50	10	39	opens	open	VERB
cc08hd78w50	10	40	the	the	DET
cc08hd78w50	10	41	possibility	possibility	NOUN
cc08hd78w50	10	42	of	of	ADP
cc08hd78w50	10	43	active	active	ADJ
cc08hd78w50	10	44	device	device	NOUN
cc08hd78w50	10	45	driven	drive	VERB
cc08hd78w50	10	46	switching	switching	NOUN
cc08hd78w50	10	47	of	of	ADP
cc08hd78w50	10	48	nanomagnets	nanomagnet	NOUN
cc08hd78w50	10	49	in	in	ADP
cc08hd78w50	10	50	mqca	mqca	PROPN
cc08hd78w50	10	51	logic	logic	NOUN
cc08hd78w50	10	52	operation	operation	NOUN
cc08hd78w50	10	53	.	.	PUNCT
cc08hd78w50	11	1	although	although	SCONJ
cc08hd78w50	11	2	simulation	simulation	NOUN
cc08hd78w50	11	3	result	result	NOUN
cc08hd78w50	11	4	has	have	AUX
cc08hd78w50	11	5	shown	show	VERB
cc08hd78w50	11	6	that	that	SCONJ
cc08hd78w50	11	7	the	the	DET
cc08hd78w50	11	8	field	field	NOUN
cc08hd78w50	11	9	requirement	requirement	NOUN
cc08hd78w50	11	10	in	in	ADP
cc08hd78w50	11	11	nanomagnet	nanomagnet	NOUN
cc08hd78w50	11	12	switching	switching	NOUN
cc08hd78w50	11	13	is	be	AUX
cc08hd78w50	11	14	higher	high	ADJ
cc08hd78w50	11	15	compared	compare	VERB
cc08hd78w50	11	16	to	to	ADP
cc08hd78w50	11	17	the	the	DET
cc08hd78w50	11	18	h	h	PROPN
cc08hd78w50	11	19	field	field	NOUN
cc08hd78w50	11	20	obtained	obtain	VERB
cc08hd78w50	11	21	(	(	PUNCT
cc08hd78w50	11	22	~1mt	~1mt	SPACE
cc08hd78w50	11	23	)	)	PUNCT
cc08hd78w50	11	24	using	use	VERB
cc08hd78w50	11	25	the	the	DET
cc08hd78w50	11	26	drain	drain	NOUN
cc08hd78w50	11	27	current	current	NOUN
cc08hd78w50	11	28	(	(	PUNCT
cc08hd78w50	11	29	1.4amps	1.4amps	NUM
cc08hd78w50	11	30	/	/	SYM
cc08hd78w50	11	31	mm	mm	PROPN
cc08hd78w50	11	32	)	)	PUNCT
cc08hd78w50	11	33	of	of	ADP
cc08hd78w50	11	34	a	a	DET
cc08hd78w50	11	35	normal	normal	ADJ
cc08hd78w50	11	36	hemt	hemt	NOUN
cc08hd78w50	11	37	,	,	PUNCT
cc08hd78w50	11	38	it	it	PRON
cc08hd78w50	11	39	is	be	AUX
cc08hd78w50	11	40	possible	possible	ADJ
cc08hd78w50	11	41	to	to	PART
cc08hd78w50	11	42	use	use	VERB
cc08hd78w50	11	43	other	other	ADJ
cc08hd78w50	11	44	nitride	nitride	NOUN
cc08hd78w50	11	45	structures	structure	NOUN
cc08hd78w50	11	46	(	(	PUNCT
cc08hd78w50	11	47	n	n	NOUN
cc08hd78w50	11	48	-	-	PUNCT
cc08hd78w50	11	49	gan	gan	PROPN
cc08hd78w50	11	50	)	)	PUNCT
cc08hd78w50	11	51	to	to	PART
cc08hd78w50	11	52	deliver	deliver	VERB
cc08hd78w50	11	53	current	current	ADJ
cc08hd78w50	11	54	density	density	NOUN
cc08hd78w50	11	55	more	more	ADJ
cc08hd78w50	11	56	than	than	ADP
cc08hd78w50	11	57	10amps	10amp	NOUN
cc08hd78w50	11	58	/	/	SYM
cc08hd78w50	11	59	mm	mm	PROPN
cc08hd78w50	11	60	as	as	SCONJ
cc08hd78w50	11	61	shown	show	VERB
cc08hd78w50	11	62	in	in	ADP
cc08hd78w50	11	63	this	this	DET
cc08hd78w50	11	64	work	work	NOUN
cc08hd78w50	11	65	.	.	PUNCT
cc08hd78w50	12	1	such	such	DET
cc08hd78w50	12	2	a	a	DET
cc08hd78w50	12	3	high	high	ADJ
cc08hd78w50	12	4	current	current	ADJ
cc08hd78w50	12	5	density	density	NOUN
cc08hd78w50	12	6	produces	produce	VERB
cc08hd78w50	12	7	a	a	DET
cc08hd78w50	12	8	magnetic	magnetic	ADJ
cc08hd78w50	12	9	field	field	NOUN
cc08hd78w50	12	10	in	in	ADP
cc08hd78w50	12	11	excess	excess	NOUN
cc08hd78w50	12	12	of	of	ADP
cc08hd78w50	12	13	8mt	8mt	NOUN
cc08hd78w50	12	14	.	.	PUNCT
cc08hd78w50	13	1	this	this	DET
cc08hd78w50	13	2	field	field	NOUN
cc08hd78w50	13	3	can	can	AUX
cc08hd78w50	13	4	be	be	AUX
cc08hd78w50	13	5	used	use	VERB
cc08hd78w50	13	6	affectively	affectively	ADV
cc08hd78w50	13	7	to	to	PART
cc08hd78w50	13	8	move	move	VERB
cc08hd78w50	13	9	the	the	DET
cc08hd78w50	13	10	domains	domain	NOUN
cc08hd78w50	13	11	of	of	ADP
cc08hd78w50	13	12	the	the	DET
cc08hd78w50	13	13	micromagnetic	micromagnetic	ADJ
cc08hd78w50	13	14	structures	structure	NOUN
cc08hd78w50	13	15	,	,	PUNCT
cc08hd78w50	13	16	and	and	CCONJ
cc08hd78w50	13	17	possibly	possibly	ADV
cc08hd78w50	13	18	nanomagnets	nanomagnet	VERB
cc08hd78w50	13	19	switching	switch	VERB
cc08hd78w50	13	20	too	too	ADV
cc08hd78w50	13	21	.	.	PUNCT