id	sid	tid	token	lemma	pos
c821gh96q66	1	1	the	the	DET
c821gh96q66	1	2	relentless	relentless	ADJ
c821gh96q66	1	3	scaling	scaling	NOUN
c821gh96q66	1	4	of	of	ADP
c821gh96q66	1	5	cmos	cmos	NOUN
c821gh96q66	1	6	integrated	integrate	VERB
c821gh96q66	1	7	circuit	circuit	NOUN
c821gh96q66	1	8	(	(	PUNCT
c821gh96q66	1	9	ic	ic	NOUN
c821gh96q66	1	10	)	)	PUNCT
c821gh96q66	1	11	technology	technology	NOUN
c821gh96q66	1	12	following	follow	VERB
c821gh96q66	1	13	moore	moore	NOUN
c821gh96q66	1	14	's	's	PART
c821gh96q66	1	15	law	law	NOUN
c821gh96q66	1	16	has	have	AUX
c821gh96q66	1	17	enabled	enable	VERB
c821gh96q66	1	18	faster	fast	ADV
c821gh96q66	1	19	,	,	PUNCT
c821gh96q66	1	20	smaller	small	ADJ
c821gh96q66	1	21	,	,	PUNCT
c821gh96q66	1	22	and	and	CCONJ
c821gh96q66	1	23	energy	energy	NOUN
c821gh96q66	1	24	efficient	efficient	ADJ
c821gh96q66	1	25	electronics	electronic	NOUN
c821gh96q66	1	26	for	for	ADP
c821gh96q66	1	27	last	last	ADJ
c821gh96q66	1	28	60	60	NUM
c821gh96q66	1	29	years	year	NOUN
c821gh96q66	1	30	.	.	PUNCT
c821gh96q66	2	1	however	however	ADV
c821gh96q66	2	2	,	,	PUNCT
c821gh96q66	2	3	moore	moore	PROPN
c821gh96q66	2	4	's	's	PART
c821gh96q66	2	5	law	law	NOUN
c821gh96q66	2	6	has	have	AUX
c821gh96q66	2	7	been	be	AUX
c821gh96q66	2	8	predicted	predict	VERB
c821gh96q66	2	9	to	to	PART
c821gh96q66	2	10	face	face	VERB
c821gh96q66	2	11	extreme	extreme	ADJ
c821gh96q66	2	12	challenges	challenge	NOUN
c821gh96q66	2	13	to	to	PART
c821gh96q66	2	14	meet	meet	VERB
c821gh96q66	2	15	the	the	DET
c821gh96q66	2	16	future	future	ADJ
c821gh96q66	2	17	requirements	requirement	NOUN
c821gh96q66	2	18	of	of	ADP
c821gh96q66	2	19	seamless	seamless	ADJ
c821gh96q66	2	20	interaction	interaction	NOUN
c821gh96q66	2	21	between	between	ADP
c821gh96q66	2	22	big	big	ADJ
c821gh96q66	2	23	-	-	PUNCT
c821gh96q66	2	24	data	data	NOUN
c821gh96q66	2	25	oriented	orient	VERB
c821gh96q66	2	26	compute	compute	NOUN
c821gh96q66	2	27	intensive	intensive	ADJ
c821gh96q66	2	28	domain	domain	NOUN
c821gh96q66	2	29	in	in	ADP
c821gh96q66	2	30	server	server	NOUN
c821gh96q66	2	31	-	-	PUNCT
c821gh96q66	2	32	class	class	NOUN
c821gh96q66	2	33	systems	system	NOUN
c821gh96q66	2	34	and	and	CCONJ
c821gh96q66	2	35	instant	instant	ADJ
c821gh96q66	2	36	data	datum	NOUN
c821gh96q66	2	37	centric	centric	ADJ
c821gh96q66	2	38	memory	memory	NOUN
c821gh96q66	2	39	intensive	intensive	ADJ
c821gh96q66	2	40	spaces	space	NOUN
c821gh96q66	2	41	in	in	ADP
c821gh96q66	2	42	clients	client	NOUN
c821gh96q66	2	43	(	(	PUNCT
c821gh96q66	2	44	autonomous	autonomous	ADJ
c821gh96q66	2	45	vehicle	vehicle	NOUN
c821gh96q66	2	46	,	,	PUNCT
c821gh96q66	2	47	internet	internet	NOUN
c821gh96q66	2	48	-	-	PUNCT
c821gh96q66	2	49	of	of	ADP
c821gh96q66	2	50	-	-	PUNCT
c821gh96q66	2	51	things	thing	NOUN
c821gh96q66	2	52	systems	system	NOUN
c821gh96q66	2	53	,	,	PUNCT
c821gh96q66	2	54	mobile	mobile	NOUN
c821gh96q66	2	55	computing	computing	NOUN
c821gh96q66	2	56	etc	etc	X
c821gh96q66	2	57	.	.	X
c821gh96q66	2	58	)	)	PUNCT
c821gh96q66	2	59	.	.	PUNCT
c821gh96q66	3	1	in	in	ADP
c821gh96q66	3	2	order	order	NOUN
c821gh96q66	3	3	to	to	PART
c821gh96q66	3	4	address	address	VERB
c821gh96q66	3	5	these	these	DET
c821gh96q66	3	6	challenges	challenge	NOUN
c821gh96q66	3	7	in	in	ADP
c821gh96q66	3	8	future	future	ADJ
c821gh96q66	3	9	computing	computing	NOUN
c821gh96q66	3	10	systems	system	NOUN
c821gh96q66	3	11	,	,	PUNCT
c821gh96q66	3	12	this	this	DET
c821gh96q66	3	13	thesis	thesis	NOUN
c821gh96q66	3	14	work	work	NOUN
c821gh96q66	3	15	focuses	focus	VERB
c821gh96q66	3	16	on	on	ADP
c821gh96q66	3	17	novel	novel	ADJ
c821gh96q66	3	18	design	design	NOUN
c821gh96q66	3	19	space	space	NOUN
c821gh96q66	3	20	exploration	exploration	NOUN
c821gh96q66	3	21	of	of	ADP
c821gh96q66	3	22	cmos	cmos	NOUN
c821gh96q66	3	23	technology	technology	NOUN
c821gh96q66	3	24	by	by	ADP
c821gh96q66	3	25	investigating	investigate	VERB
c821gh96q66	3	26	:	:	PUNCT
c821gh96q66	3	27	(	(	PUNCT
c821gh96q66	3	28	a	a	X
c821gh96q66	3	29	)	)	PUNCT
c821gh96q66	3	30	cryogenic	cryogenic	ADJ
c821gh96q66	3	31	-	-	PUNCT
c821gh96q66	3	32	cmos	cmos	NOUN
c821gh96q66	3	33	logic	logic	NOUN
c821gh96q66	3	34	and	and	CCONJ
c821gh96q66	3	35	memory	memory	NOUN
c821gh96q66	3	36	technology	technology	NOUN
c821gh96q66	3	37	for	for	ADP
c821gh96q66	3	38	achieving	achieve	VERB
c821gh96q66	3	39	extremely	extremely	ADV
c821gh96q66	3	40	-	-	PUNCT
c821gh96q66	3	41	high	high	ADJ
c821gh96q66	3	42	performance	performance	NOUN
c821gh96q66	3	43	and	and	CCONJ
c821gh96q66	3	44	energy	energy	NOUN
c821gh96q66	3	45	efficiency	efficiency	NOUN
c821gh96q66	3	46	in	in	ADP
c821gh96q66	3	47	compute	compute	NOUN
c821gh96q66	3	48	intensive	intensive	ADJ
c821gh96q66	3	49	application	application	NOUN
c821gh96q66	3	50	space	space	NOUN
c821gh96q66	3	51	,	,	PUNCT
c821gh96q66	3	52	and	and	CCONJ
c821gh96q66	3	53	(	(	PUNCT
c821gh96q66	3	54	b	b	X
c821gh96q66	3	55	)	)	PUNCT
c821gh96q66	3	56	monolithic	monolithic	ADJ
c821gh96q66	3	57	three	three	NUM
c821gh96q66	3	58	-	-	PUNCT
c821gh96q66	3	59	dimensional	dimensional	ADJ
c821gh96q66	3	60	(	(	PUNCT
c821gh96q66	3	61	m-3d	m-3d	NOUN
c821gh96q66	3	62	)	)	PUNCT
c821gh96q66	3	63	integration	integration	NOUN
c821gh96q66	3	64	of	of	ADP
c821gh96q66	3	65	high	high	ADJ
c821gh96q66	3	66	-	-	PUNCT
c821gh96q66	3	67	performance	performance	NOUN
c821gh96q66	3	68	amorphous	amorphous	ADJ
c821gh96q66	3	69	oxide	oxide	NOUN
c821gh96q66	3	70	semiconductor	semiconductor	NOUN
c821gh96q66	3	71	(	(	PUNCT
c821gh96q66	3	72	aos	aos	PROPN
c821gh96q66	3	73	)	)	PUNCT
c821gh96q66	3	74	transistors	transistor	NOUN
c821gh96q66	3	75	for	for	ADP
c821gh96q66	3	76	high	high	ADJ
c821gh96q66	3	77	-	-	PUNCT
c821gh96q66	3	78	capacity	capacity	NOUN
c821gh96q66	3	79	and	and	CCONJ
c821gh96q66	3	80	high	high	ADJ
c821gh96q66	3	81	bandwidth	bandwidth	ADJ
c821gh96q66	3	82	embedded	embed	VERB
c821gh96q66	3	83	memory	memory	NOUN
c821gh96q66	3	84	in	in	ADP
c821gh96q66	3	85	memory	memory	NOUN
c821gh96q66	3	86	intensive	intensive	ADJ
c821gh96q66	3	87	application	application	NOUN
c821gh96q66	3	88	space	space	NOUN
c821gh96q66	3	89	.	.	PUNCT
c821gh96q66	4	1	deeply	deeply	ADV
c821gh96q66	4	2	scaled	scale	VERB
c821gh96q66	4	3	cryogenic	cryogenic	ADJ
c821gh96q66	4	4	-	-	PUNCT
c821gh96q66	4	5	cmos	cmos	NOUN
c821gh96q66	4	6	harnesses	harness	NOUN
c821gh96q66	4	7	operating	operate	VERB
c821gh96q66	4	8	temperature	temperature	NOUN
c821gh96q66	4	9	as	as	ADP
c821gh96q66	4	10	the	the	DET
c821gh96q66	4	11	primary	primary	ADJ
c821gh96q66	4	12	knob	knob	NOUN
c821gh96q66	4	13	to	to	PART
c821gh96q66	4	14	achieve	achieve	VERB
c821gh96q66	4	15	ultimate	ultimate	ADJ
c821gh96q66	4	16	energy	energy	NOUN
c821gh96q66	4	17	-	-	PUNCT
c821gh96q66	4	18	delay	delay	NOUN
c821gh96q66	4	19	-	-	PUNCT
c821gh96q66	4	20	product	product	NOUN
c821gh96q66	4	21	(	(	PUNCT
c821gh96q66	4	22	edp	edp	PROPN
c821gh96q66	4	23	)	)	PUNCT
c821gh96q66	4	24	performance	performance	NOUN
c821gh96q66	4	25	limit	limit	NOUN
c821gh96q66	4	26	.	.	PUNCT
c821gh96q66	5	1	this	this	DET
c821gh96q66	5	2	thesis	thesis	NOUN
c821gh96q66	5	3	work	work	NOUN
c821gh96q66	5	4	investigates	investigate	VERB
c821gh96q66	5	5	the	the	DET
c821gh96q66	5	6	potential	potential	NOUN
c821gh96q66	5	7	of	of	ADP
c821gh96q66	5	8	low	low	ADJ
c821gh96q66	5	9	temperature	temperature	NOUN
c821gh96q66	5	10	enabled	enable	VERB
c821gh96q66	5	11	performance	performance	NOUN
c821gh96q66	5	12	boosters	booster	NOUN
c821gh96q66	5	13	in	in	ADP
c821gh96q66	5	14	14	14	NUM
c821gh96q66	5	15	nm	nm	NOUN
c821gh96q66	5	16	finfet	finfet	NOUN
c821gh96q66	5	17	platform	platform	NOUN
c821gh96q66	5	18	through	through	ADP
c821gh96q66	5	19	electrical	electrical	ADJ
c821gh96q66	5	20	characterization	characterization	NOUN
c821gh96q66	5	21	,	,	PUNCT
c821gh96q66	5	22	compact	compact	ADJ
c821gh96q66	5	23	model	model	NOUN
c821gh96q66	5	24	development	development	NOUN
c821gh96q66	5	25	and	and	CCONJ
c821gh96q66	5	26	benchmarking	benchmarke	VERB
c821gh96q66	5	27	edp	edp	ADJ
c821gh96q66	5	28	benefits	benefit	NOUN
c821gh96q66	5	29	of	of	ADP
c821gh96q66	5	30	cryogenic	cryogenic	ADJ
c821gh96q66	5	31	cmos	cmos	NOUN
c821gh96q66	5	32	.	.	PUNCT
c821gh96q66	6	1	low	low	ADJ
c821gh96q66	6	2	temperature	temperature	NOUN
c821gh96q66	6	3	enabled	enable	VERB
c821gh96q66	6	4	equivalent	equivalent	ADJ
c821gh96q66	6	5	oxide	oxide	NOUN
c821gh96q66	6	6	thickness	thickness	NOUN
c821gh96q66	6	7	(	(	PUNCT
c821gh96q66	6	8	eot	eot	PROPN
c821gh96q66	6	9	)	)	PUNCT
c821gh96q66	6	10	scaling	scaling	NOUN
c821gh96q66	6	11	is	be	AUX
c821gh96q66	6	12	proposed	propose	VERB
c821gh96q66	6	13	for	for	ADP
c821gh96q66	6	14	the	the	DET
c821gh96q66	6	15	first	first	ADJ
c821gh96q66	6	16	time	time	NOUN
c821gh96q66	6	17	,	,	PUNCT
c821gh96q66	6	18	to	to	PART
c821gh96q66	6	19	potentially	potentially	ADV
c821gh96q66	6	20	enable	enable	VERB
c821gh96q66	6	21	0.2v	0.2v	NOUN
c821gh96q66	6	22	logic	logic	NOUN
c821gh96q66	6	23	operation	operation	NOUN
c821gh96q66	6	24	and	and	CCONJ
c821gh96q66	6	25	gain	gain	VERB
c821gh96q66	6	26	further	far	ADV
c821gh96q66	6	27	50	50	NUM
c821gh96q66	6	28	%	%	NOUN
c821gh96q66	6	29	edp	edp	DET
c821gh96q66	6	30	improvement	improvement	NOUN
c821gh96q66	6	31	in	in	ADP
c821gh96q66	6	32	cryogenic	cryogenic	ADJ
c821gh96q66	6	33	cmos	cmos	NOUN
c821gh96q66	6	34	.	.	PUNCT
c821gh96q66	7	1	a	a	DET
c821gh96q66	7	2	novel	novel	ADJ
c821gh96q66	7	3	gate	gate	NOUN
c821gh96q66	7	4	-	-	PUNCT
c821gh96q66	7	5	stack	stack	NOUN
c821gh96q66	7	6	with	with	ADP
c821gh96q66	7	7	aggressively	aggressively	ADV
c821gh96q66	7	8	scaled	scale	VERB
c821gh96q66	7	9	zr	zr	PROPN
c821gh96q66	7	10	-	-	PUNCT
c821gh96q66	7	11	doped	dope	VERB
c821gh96q66	7	12	hfo2	hfo2	ADJ
c821gh96q66	7	13	mixed	mixed	ADJ
c821gh96q66	7	14	-	-	PUNCT
c821gh96q66	7	15	phase	phase	NOUN
c821gh96q66	7	16	higher	high	ADJ
c821gh96q66	7	17	-	-	PUNCT
c821gh96q66	7	18	κ	κ	NOUN
c821gh96q66	7	19	gate	gate	NOUN
c821gh96q66	7	20	-	-	PUNCT
c821gh96q66	7	21	dielectric	dielectric	NOUN
c821gh96q66	7	22	is	be	AUX
c821gh96q66	7	23	proposed	propose	VERB
c821gh96q66	7	24	to	to	PART
c821gh96q66	7	25	meet	meet	VERB
c821gh96q66	7	26	the	the	DET
c821gh96q66	7	27	ultra	ultra	ADJ
c821gh96q66	7	28	-	-	ADJ
c821gh96q66	7	29	low	low	ADJ
c821gh96q66	7	30	eot	eot	NOUN
c821gh96q66	7	31	goal	goal	NOUN
c821gh96q66	7	32	.	.	PUNCT
c821gh96q66	8	1	moreover	moreover	ADV
c821gh96q66	8	2	,	,	PUNCT
c821gh96q66	8	3	high	high	ADJ
c821gh96q66	8	4	-	-	PUNCT
c821gh96q66	8	5	capacity	capacity	NOUN
c821gh96q66	8	6	,	,	PUNCT
c821gh96q66	8	7	high	high	ADJ
c821gh96q66	8	8	-	-	PUNCT
c821gh96q66	8	9	bandwidth	bandwidth	ADJ
c821gh96q66	8	10	and	and	CCONJ
c821gh96q66	8	11	pseudo	pseudo	NOUN
c821gh96q66	8	12	-	-	ADJ
c821gh96q66	8	13	static	static	ADJ
c821gh96q66	8	14	1	1	NUM
c821gh96q66	8	15	t	t	NOUN
c821gh96q66	8	16	floating	float	VERB
c821gh96q66	8	17	body	body	NOUN
c821gh96q66	8	18	ram	ram	NOUN
c821gh96q66	8	19	(	(	PUNCT
c821gh96q66	8	20	fbram	fbram	PROPN
c821gh96q66	8	21	)	)	PUNCT
c821gh96q66	8	22	with	with	ADP
c821gh96q66	8	23	record	record	ADJ
c821gh96q66	8	24	ultra	ultra	ADJ
c821gh96q66	8	25	-	-	ADJ
c821gh96q66	8	26	fast	fast	ADJ
c821gh96q66	8	27	write	write	ADJ
c821gh96q66	8	28	speed	speed	NOUN
c821gh96q66	8	29	(	(	PUNCT
c821gh96q66	8	30	~5ns	~5ns	NUM
c821gh96q66	8	31	)	)	PUNCT
c821gh96q66	8	32	is	be	AUX
c821gh96q66	8	33	demonstrated	demonstrate	VERB
c821gh96q66	8	34	for	for	ADP
c821gh96q66	8	35	the	the	DET
c821gh96q66	8	36	first	first	ADJ
c821gh96q66	8	37	time	time	NOUN
c821gh96q66	8	38	at	at	ADP
c821gh96q66	8	39	cryogenic	cryogenic	ADJ
c821gh96q66	8	40	temperature	temperature	NOUN
c821gh96q66	8	41	for	for	ADP
c821gh96q66	8	42	cache	cache	PROPN
c821gh96q66	8	43	memory	memory	NOUN
c821gh96q66	8	44	to	to	PART
c821gh96q66	8	45	provide	provide	VERB
c821gh96q66	8	46	potential	potential	ADJ
c821gh96q66	8	47	advantage	advantage	NOUN
c821gh96q66	8	48	in	in	ADP
c821gh96q66	8	49	core	core	NOUN
c821gh96q66	8	50	-	-	PUNCT
c821gh96q66	8	51	to	to	ADP
c821gh96q66	8	52	-	-	PUNCT
c821gh96q66	8	53	cache	cache	NOUN
c821gh96q66	8	54	balance	balance	NOUN
c821gh96q66	8	55	,	,	PUNCT
c821gh96q66	8	56	cache	cache	PROPN
c821gh96q66	8	57	miss	miss	VERB
c821gh96q66	8	58	rate	rate	NOUN
c821gh96q66	8	59	and	and	CCONJ
c821gh96q66	8	60	power	power	NOUN
c821gh96q66	8	61	consumption	consumption	NOUN
c821gh96q66	8	62	.	.	PUNCT
c821gh96q66	9	1	m-3d	m-3d	NOUN
c821gh96q66	9	2	integration	integration	NOUN
c821gh96q66	9	3	of	of	ADP
c821gh96q66	9	4	back	back	ADJ
c821gh96q66	9	5	-	-	PUNCT
c821gh96q66	9	6	end	end	NOUN
c821gh96q66	9	7	-	-	PUNCT
c821gh96q66	9	8	of	of	ADP
c821gh96q66	9	9	-	-	PUNCT
c821gh96q66	9	10	the	the	DET
c821gh96q66	9	11	-	-	PUNCT
c821gh96q66	9	12	line	line	NOUN
c821gh96q66	9	13	(	(	PUNCT
c821gh96q66	9	14	beol	beol	ADJ
c821gh96q66	9	15	)	)	PUNCT
c821gh96q66	9	16	memory	memory	NOUN
c821gh96q66	9	17	in	in	ADP
c821gh96q66	9	18	a	a	DET
c821gh96q66	9	19	multitier	multiti	ADJ
c821gh96q66	9	20	structure	structure	NOUN
c821gh96q66	9	21	aimed	aim	VERB
c821gh96q66	9	22	to	to	PART
c821gh96q66	9	23	increase	increase	VERB
c821gh96q66	9	24	memory	memory	NOUN
c821gh96q66	9	25	capacity	capacity	NOUN
c821gh96q66	9	26	and	and	CCONJ
c821gh96q66	9	27	inter	inter	NOUN
c821gh96q66	9	28	-	-	NOUN
c821gh96q66	9	29	tier	tier	NOUN
c821gh96q66	9	30	via	via	ADP
c821gh96q66	9	31	density	density	NOUN
c821gh96q66	9	32	,	,	PUNCT
c821gh96q66	9	33	resulting	result	VERB
c821gh96q66	9	34	in	in	ADP
c821gh96q66	9	35	an	an	DET
c821gh96q66	9	36	overall	overall	ADJ
c821gh96q66	9	37	gain	gain	NOUN
c821gh96q66	9	38	in	in	ADP
c821gh96q66	9	39	memory	memory	NOUN
c821gh96q66	9	40	bandwidth	bandwidth	ADJ
c821gh96q66	9	41	.	.	PUNCT
c821gh96q66	10	1	in	in	ADP
c821gh96q66	10	2	that	that	DET
c821gh96q66	10	3	context	context	NOUN
c821gh96q66	10	4	,	,	PUNCT
c821gh96q66	10	5	this	this	DET
c821gh96q66	10	6	thesis	thesis	NOUN
c821gh96q66	10	7	also	also	ADV
c821gh96q66	10	8	focuses	focus	VERB
c821gh96q66	10	9	on	on	ADP
c821gh96q66	10	10	fabrication	fabrication	NOUN
c821gh96q66	10	11	and	and	CCONJ
c821gh96q66	10	12	characterization	characterization	NOUN
c821gh96q66	10	13	of	of	ADP
c821gh96q66	10	14	beol	beol	ADJ
c821gh96q66	10	15	compatible	compatible	ADJ
c821gh96q66	10	16	aos	aos	PROPN
c821gh96q66	10	17	channel	channel	PROPN
c821gh96q66	10	18	(	(	PUNCT
c821gh96q66	10	19	w	w	ADJ
c821gh96q66	10	20	-	-	PUNCT
c821gh96q66	10	21	doped	dope	VERB
c821gh96q66	10	22	indium	indium	NOUN
c821gh96q66	10	23	-	-	PUNCT
c821gh96q66	10	24	oxide	oxide	NOUN
c821gh96q66	10	25	or	or	CCONJ
c821gh96q66	10	26	iwo	iwo	PROPN
c821gh96q66	10	27	)	)	PUNCT
c821gh96q66	10	28	fets	fet	NOUN
c821gh96q66	10	29	.	.	PUNCT
c821gh96q66	11	1	dual	dual	ADV
c821gh96q66	11	2	-	-	PUNCT
c821gh96q66	11	3	gated	gate	VERB
c821gh96q66	11	4	iwo	iwo	PROPN
c821gh96q66	11	5	transistors	transistor	NOUN
c821gh96q66	11	6	with	with	ADP
c821gh96q66	11	7	scaled	scale	VERB
c821gh96q66	11	8	channel	channel	NOUN
c821gh96q66	11	9	length	length	NOUN
c821gh96q66	11	10	(	(	PUNCT
c821gh96q66	11	11	50	50	NUM
c821gh96q66	11	12	nm	nm	NOUN
c821gh96q66	11	13	)	)	PUNCT
c821gh96q66	11	14	and	and	CCONJ
c821gh96q66	11	15	excellent	excellent	ADJ
c821gh96q66	11	16	switching	switching	NOUN
c821gh96q66	11	17	characteristics	characteristic	NOUN
c821gh96q66	11	18	is	be	AUX
c821gh96q66	11	19	successfully	successfully	ADV
c821gh96q66	11	20	demonstrated	demonstrate	VERB
c821gh96q66	11	21	.	.	PUNCT
c821gh96q66	12	1	furthermore	furthermore	ADV
c821gh96q66	12	2	,	,	PUNCT
c821gh96q66	12	3	mitigation	mitigation	NOUN
c821gh96q66	12	4	of	of	ADP
c821gh96q66	12	5	stoichiometric	stoichiometric	ADJ
c821gh96q66	12	6	defects	defect	NOUN
c821gh96q66	12	7	in	in	ADP
c821gh96q66	12	8	amorphous	amorphous	ADJ
c821gh96q66	12	9	oxide	oxide	NOUN
c821gh96q66	12	10	channel	channel	NOUN
c821gh96q66	12	11	is	be	AUX
c821gh96q66	12	12	also	also	ADV
c821gh96q66	12	13	investigated	investigate	VERB
c821gh96q66	12	14	through	through	ADP
c821gh96q66	12	15	anneal	anneal	ADJ
c821gh96q66	12	16	treatments	treatment	NOUN
c821gh96q66	12	17	to	to	PART
c821gh96q66	12	18	improve	improve	VERB
c821gh96q66	12	19	device	device	NOUN
c821gh96q66	12	20	reliability	reliability	NOUN
c821gh96q66	12	21	of	of	ADP
c821gh96q66	12	22	oxide	oxide	NOUN
c821gh96q66	12	23	-	-	PUNCT
c821gh96q66	12	24	semiconductor	semiconductor	NOUN
c821gh96q66	12	25	fets	fet	NOUN
c821gh96q66	12	26	.	.	PUNCT