id	sid	tid	token	lemma	pos
bz60cv45s9j	1	1	the	the	DET
bz60cv45s9j	1	2	continuing	continue	VERB
bz60cv45s9j	1	3	increase	increase	NOUN
bz60cv45s9j	1	4	of	of	ADP
bz60cv45s9j	1	5	the	the	DET
bz60cv45s9j	1	6	device	device	NOUN
bz60cv45s9j	1	7	density	density	NOUN
bz60cv45s9j	1	8	in	in	ADP
bz60cv45s9j	1	9	integrated	integrate	VERB
bz60cv45s9j	1	10	circuits	circuit	NOUN
bz60cv45s9j	1	11	(	(	PUNCT
bz60cv45s9j	1	12	ics	ics	X
bz60cv45s9j	1	13	)	)	PUNCT
bz60cv45s9j	1	14	gives	give	VERB
bz60cv45s9j	1	15	rise	rise	NOUN
bz60cv45s9j	1	16	to	to	ADP
bz60cv45s9j	1	17	the	the	DET
bz60cv45s9j	1	18	high	high	ADJ
bz60cv45s9j	1	19	level	level	NOUN
bz60cv45s9j	1	20	of	of	ADP
bz60cv45s9j	1	21	power	power	NOUN
bz60cv45s9j	1	22	that	that	PRON
bz60cv45s9j	1	23	is	be	AUX
bz60cv45s9j	1	24	dissipated	dissipate	VERB
bz60cv45s9j	1	25	per	per	ADP
bz60cv45s9j	1	26	unit	unit	NOUN
bz60cv45s9j	1	27	area	area	NOUN
bz60cv45s9j	1	28	and	and	CCONJ
bz60cv45s9j	1	29	consequently	consequently	ADV
bz60cv45s9j	1	30	a	a	DET
bz60cv45s9j	1	31	high	high	ADJ
bz60cv45s9j	1	32	temperature	temperature	NOUN
bz60cv45s9j	1	33	in	in	ADP
bz60cv45s9j	1	34	the	the	DET
bz60cv45s9j	1	35	circuits	circuit	NOUN
bz60cv45s9j	1	36	.	.	PUNCT
bz60cv45s9j	2	1	since	since	SCONJ
bz60cv45s9j	2	2	temperature	temperature	NOUN
bz60cv45s9j	2	3	affects	affect	VERB
bz60cv45s9j	2	4	the	the	DET
bz60cv45s9j	2	5	performance	performance	NOUN
bz60cv45s9j	2	6	and	and	CCONJ
bz60cv45s9j	2	7	reliability	reliability	NOUN
bz60cv45s9j	2	8	of	of	ADP
bz60cv45s9j	2	9	the	the	DET
bz60cv45s9j	2	10	circuits	circuit	NOUN
bz60cv45s9j	2	11	,	,	PUNCT
bz60cv45s9j	2	12	minimization	minimization	NOUN
bz60cv45s9j	2	13	of	of	ADP
bz60cv45s9j	2	14	the	the	DET
bz60cv45s9j	2	15	energy	energy	NOUN
bz60cv45s9j	2	16	consumption	consumption	NOUN
bz60cv45s9j	2	17	in	in	ADP
bz60cv45s9j	2	18	logic	logic	NOUN
bz60cv45s9j	2	19	devices	device	NOUN
bz60cv45s9j	2	20	is	be	AUX
bz60cv45s9j	2	21	now	now	ADV
bz60cv45s9j	2	22	the	the	DET
bz60cv45s9j	2	23	center	center	NOUN
bz60cv45s9j	2	24	of	of	ADP
bz60cv45s9j	2	25	attention	attention	NOUN
bz60cv45s9j	2	26	.	.	PUNCT
bz60cv45s9j	3	1	according	accord	VERB
bz60cv45s9j	3	2	to	to	ADP
bz60cv45s9j	3	3	the	the	DET
bz60cv45s9j	3	4	international	international	ADJ
bz60cv45s9j	3	5	technology	technology	NOUN
bz60cv45s9j	3	6	roadmaps	roadmap	NOUN
bz60cv45s9j	3	7	for	for	ADP
bz60cv45s9j	3	8	semiconductors	semiconductor	NOUN
bz60cv45s9j	3	9	(	(	PUNCT
bz60cv45s9j	3	10	itrs	itrs	PROPN
bz60cv45s9j	3	11	)	)	PUNCT
bz60cv45s9j	3	12	,	,	PUNCT
bz60cv45s9j	3	13	single	single	ADJ
bz60cv45s9j	3	14	electron	electron	NOUN
bz60cv45s9j	3	15	transistors	transistor	NOUN
bz60cv45s9j	3	16	(	(	PUNCT
bz60cv45s9j	3	17	sets	set	NOUN
bz60cv45s9j	3	18	)	)	PUNCT
bz60cv45s9j	3	19	hold	hold	VERB
bz60cv45s9j	3	20	the	the	DET
bz60cv45s9j	3	21	promise	promise	NOUN
bz60cv45s9j	3	22	of	of	ADP
bz60cv45s9j	3	23	achieving	achieve	VERB
bz60cv45s9j	3	24	the	the	DET
bz60cv45s9j	3	25	lowest	low	ADJ
bz60cv45s9j	3	26	power	power	NOUN
bz60cv45s9j	3	27	of	of	ADP
bz60cv45s9j	3	28	any	any	DET
bz60cv45s9j	3	29	known	know	VERB
bz60cv45s9j	3	30	logic	logic	NOUN
bz60cv45s9j	3	31	device	device	NOUN
bz60cv45s9j	3	32	,	,	PUNCT
bz60cv45s9j	3	33	as	as	ADV
bz60cv45s9j	3	34	low	low	ADJ
bz60cv45s9j	3	35	as	as	ADP
bz60cv45s9j	3	36	1×10−18	1×10−18	NUM
bz60cv45s9j	3	37	j	j	X
bz60cv45s9j	3	38	per	per	ADP
bz60cv45s9j	3	39	switching	switching	NOUN
bz60cv45s9j	3	40	event	event	NOUN
bz60cv45s9j	3	41	.	.	PUNCT
bz60cv45s9j	4	1	moreover	moreover	ADV
bz60cv45s9j	4	2	,	,	PUNCT
bz60cv45s9j	4	3	sets	set	NOUN
bz60cv45s9j	4	4	are	be	AUX
bz60cv45s9j	4	5	the	the	DET
bz60cv45s9j	4	6	most	most	ADV
bz60cv45s9j	4	7	sensitive	sensitive	ADJ
bz60cv45s9j	4	8	electrometers	electrometer	NOUN
bz60cv45s9j	4	9	to	to	ADP
bz60cv45s9j	4	10	date	date	NOUN
bz60cv45s9j	4	11	,	,	PUNCT
bz60cv45s9j	4	12	and	and	CCONJ
bz60cv45s9j	4	13	are	be	AUX
bz60cv45s9j	4	14	capable	capable	ADJ
bz60cv45s9j	4	15	of	of	ADP
bz60cv45s9j	4	16	detecting	detect	VERB
bz60cv45s9j	4	17	a	a	DET
bz60cv45s9j	4	18	fraction	fraction	NOUN
bz60cv45s9j	4	19	of	of	ADP
bz60cv45s9j	4	20	an	an	DET
bz60cv45s9j	4	21	electron	electron	NOUN
bz60cv45s9j	4	22	charge	charge	NOUN
bz60cv45s9j	4	23	.	.	PUNCT
bz60cv45s9j	5	1	despite	despite	SCONJ
bz60cv45s9j	5	2	their	their	PRON
bz60cv45s9j	5	3	low	low	ADJ
bz60cv45s9j	5	4	power	power	NOUN
bz60cv45s9j	5	5	consumption	consumption	NOUN
bz60cv45s9j	5	6	and	and	CCONJ
bz60cv45s9j	5	7	high	high	ADJ
bz60cv45s9j	5	8	sensitivity	sensitivity	NOUN
bz60cv45s9j	5	9	for	for	ADP
bz60cv45s9j	5	10	charge	charge	NOUN
bz60cv45s9j	5	11	detection	detection	NOUN
bz60cv45s9j	5	12	,	,	PUNCT
bz60cv45s9j	5	13	room	room	NOUN
bz60cv45s9j	5	14	temperature	temperature	NOUN
bz60cv45s9j	5	15	operation	operation	NOUN
bz60cv45s9j	5	16	of	of	ADP
bz60cv45s9j	5	17	these	these	DET
bz60cv45s9j	5	18	devices	device	NOUN
bz60cv45s9j	5	19	is	be	AUX
bz60cv45s9j	5	20	quite	quite	ADV
bz60cv45s9j	5	21	challenging	challenging	ADJ
bz60cv45s9j	5	22	mainly	mainly	ADV
bz60cv45s9j	5	23	due	due	ADJ
bz60cv45s9j	5	24	to	to	ADP
bz60cv45s9j	5	25	lithographical	lithographical	ADJ
bz60cv45s9j	5	26	constraints	constraint	NOUN
bz60cv45s9j	5	27	in	in	ADP
bz60cv45s9j	5	28	fabricating	fabricate	VERB
bz60cv45s9j	5	29	structures	structure	NOUN
bz60cv45s9j	5	30	with	with	ADP
bz60cv45s9j	5	31	the	the	DET
bz60cv45s9j	5	32	required	require	VERB
bz60cv45s9j	5	33	dimensions	dimension	NOUN
bz60cv45s9j	5	34	of	of	ADP
bz60cv45s9j	5	35	less	less	ADJ
bz60cv45s9j	5	36	than	than	ADP
bz60cv45s9j	5	37	10	10	NUM
bz60cv45s9j	5	38	nm	nm	NOUN
bz60cv45s9j	5	39	.	.	PROPN
bz60cv45s9j	5	40	silicon	silicon	NOUN
bz60cv45s9j	5	41	based	base	VERB
bz60cv45s9j	5	42	sets	set	NOUN
bz60cv45s9j	5	43	have	have	AUX
bz60cv45s9j	5	44	been	be	AUX
bz60cv45s9j	5	45	reported	report	VERB
bz60cv45s9j	5	46	to	to	PART
bz60cv45s9j	5	47	operate	operate	VERB
bz60cv45s9j	5	48	at	at	ADP
bz60cv45s9j	5	49	room	room	NOUN
bz60cv45s9j	5	50	temperature	temperature	NOUN
bz60cv45s9j	5	51	.	.	PUNCT
bz60cv45s9j	6	1	however	however	ADV
bz60cv45s9j	6	2	,	,	PUNCT
bz60cv45s9j	6	3	they	they	PRON
bz60cv45s9j	6	4	all	all	PRON
bz60cv45s9j	6	5	suffer	suffer	VERB
bz60cv45s9j	6	6	from	from	ADP
bz60cv45s9j	6	7	significant	significant	ADJ
bz60cv45s9j	6	8	variation	variation	NOUN
bz60cv45s9j	6	9	in	in	ADP
bz60cv45s9j	6	10	batch	batch	NOUN
bz60cv45s9j	6	11	-	-	PUNCT
bz60cv45s9j	6	12	to	to	ADP
bz60cv45s9j	6	13	-	-	PUNCT
bz60cv45s9j	6	14	batch	batch	NOUN
bz60cv45s9j	6	15	performance	performance	NOUN
bz60cv45s9j	6	16	,	,	PUNCT
bz60cv45s9j	6	17	low	low	ADJ
bz60cv45s9j	6	18	fabrication	fabrication	NOUN
bz60cv45s9j	6	19	yield	yield	NOUN
bz60cv45s9j	6	20	,	,	PUNCT
bz60cv45s9j	6	21	and	and	CCONJ
bz60cv45s9j	6	22	temperature	temperature	NOUN
bz60cv45s9j	6	23	-	-	PUNCT
bz60cv45s9j	6	24	dependent	dependent	ADJ
bz60cv45s9j	6	25	tunnel	tunnel	NOUN
bz60cv45s9j	6	26	barrier	barrier	NOUN
bz60cv45s9j	6	27	height	height	NOUN
bz60cv45s9j	6	28	.	.	PUNCT
bz60cv45s9j	7	1	in	in	ADP
bz60cv45s9j	7	2	this	this	DET
bz60cv45s9j	7	3	project	project	NOUN
bz60cv45s9j	7	4	,	,	PUNCT
bz60cv45s9j	7	5	we	we	PRON
bz60cv45s9j	7	6	explored	explore	VERB
bz60cv45s9j	7	7	the	the	DET
bz60cv45s9j	7	8	fabrication	fabrication	NOUN
bz60cv45s9j	7	9	of	of	ADP
bz60cv45s9j	7	10	sets	set	NOUN
bz60cv45s9j	7	11	featuring	feature	VERB
bz60cv45s9j	7	12	metal	metal	NOUN
bz60cv45s9j	7	13	-	-	PUNCT
bz60cv45s9j	7	14	insulator	insulator	NOUN
bz60cv45s9j	7	15	-	-	PUNCT
bz60cv45s9j	7	16	metal	metal	NOUN
bz60cv45s9j	7	17	(	(	PUNCT
bz60cv45s9j	7	18	mim	mim	PROPN
bz60cv45s9j	7	19	)	)	PUNCT
bz60cv45s9j	7	20	tunnel	tunnel	NOUN
bz60cv45s9j	7	21	junctions	junction	NOUN
bz60cv45s9j	7	22	.	.	PUNCT
bz60cv45s9j	8	1	while	while	SCONJ
bz60cv45s9j	8	2	si	si	PROPN
bz60cv45s9j	8	3	-	-	PUNCT
bz60cv45s9j	8	4	based	base	VERB
bz60cv45s9j	8	5	sets	set	NOUN
bz60cv45s9j	8	6	suffer	suffer	VERB
bz60cv45s9j	8	7	from	from	ADP
bz60cv45s9j	8	8	undesirable	undesirable	ADJ
bz60cv45s9j	8	9	effect	effect	NOUN
bz60cv45s9j	8	10	of	of	ADP
bz60cv45s9j	8	11	dopants	dopant	NOUN
bz60cv45s9j	8	12	that	that	PRON
bz60cv45s9j	8	13	result	result	VERB
bz60cv45s9j	8	14	in	in	ADP
bz60cv45s9j	8	15	irregularities	irregularity	NOUN
bz60cv45s9j	8	16	in	in	ADP
bz60cv45s9j	8	17	the	the	DET
bz60cv45s9j	8	18	device	device	NOUN
bz60cv45s9j	8	19	behavior	behavior	NOUN
bz60cv45s9j	8	20	,	,	PUNCT
bz60cv45s9j	8	21	in	in	ADP
bz60cv45s9j	8	22	metal	metal	NOUN
bz60cv45s9j	8	23	-	-	PUNCT
bz60cv45s9j	8	24	based	base	VERB
bz60cv45s9j	8	25	sets	set	VERB
bz60cv45s9j	8	26	the	the	DET
bz60cv45s9j	8	27	device	device	NOUN
bz60cv45s9j	8	28	components	component	NOUN
bz60cv45s9j	8	29	(	(	PUNCT
bz60cv45s9j	8	30	tunnel	tunnel	NOUN
bz60cv45s9j	8	31	barrier	barrier	NOUN
bz60cv45s9j	8	32	,	,	PUNCT
bz60cv45s9j	8	33	island	island	NOUN
bz60cv45s9j	8	34	,	,	PUNCT
bz60cv45s9j	8	35	and	and	CCONJ
bz60cv45s9j	8	36	the	the	DET
bz60cv45s9j	8	37	leads	lead	NOUN
bz60cv45s9j	8	38	)	)	PUNCT
bz60cv45s9j	8	39	are	be	AUX
bz60cv45s9j	8	40	well	well	ADV
bz60cv45s9j	8	41	-	-	PUNCT
bz60cv45s9j	8	42	defined	define	VERB
bz60cv45s9j	8	43	.	.	PUNCT
bz60cv45s9j	9	1	therefore	therefore	ADV
bz60cv45s9j	9	2	,	,	PUNCT
bz60cv45s9j	9	3	metal	metal	NOUN
bz60cv45s9j	9	4	sets	set	NOUN
bz60cv45s9j	9	5	are	be	AUX
bz60cv45s9j	9	6	potentially	potentially	ADV
bz60cv45s9j	9	7	more	more	ADV
bz60cv45s9j	9	8	predictable	predictable	ADJ
bz60cv45s9j	9	9	in	in	ADP
bz60cv45s9j	9	10	behavior	behavior	NOUN
bz60cv45s9j	9	11	,	,	PUNCT
bz60cv45s9j	9	12	making	make	VERB
bz60cv45s9j	9	13	them	they	PRON
bz60cv45s9j	9	14	easier	easy	ADJ
bz60cv45s9j	9	15	to	to	PART
bz60cv45s9j	9	16	incorporate	incorporate	VERB
bz60cv45s9j	9	17	into	into	ADP
bz60cv45s9j	9	18	circuits	circuit	NOUN
bz60cv45s9j	9	19	,	,	PUNCT
bz60cv45s9j	9	20	and	and	CCONJ
bz60cv45s9j	9	21	easier	easy	ADJ
bz60cv45s9j	9	22	to	to	PART
bz60cv45s9j	9	23	check	check	VERB
bz60cv45s9j	9	24	against	against	ADP
bz60cv45s9j	9	25	theoretical	theoretical	ADJ
bz60cv45s9j	9	26	models.1	models.1	PROPN
bz60cv45s9j	9	27	here	here	ADV
bz60cv45s9j	9	28	,	,	PUNCT
bz60cv45s9j	9	29	the	the	DET
bz60cv45s9j	9	30	proposed	propose	VERB
bz60cv45s9j	9	31	fabrication	fabrication	NOUN
bz60cv45s9j	9	32	method	method	NOUN
bz60cv45s9j	9	33	takes	take	VERB
bz60cv45s9j	9	34	advantage	advantage	NOUN
bz60cv45s9j	9	35	of	of	ADP
bz60cv45s9j	9	36	unique	unique	ADJ
bz60cv45s9j	9	37	properties	property	NOUN
bz60cv45s9j	9	38	of	of	ADP
bz60cv45s9j	9	39	chemical	chemical	ADJ
bz60cv45s9j	9	40	mechanical	mechanical	ADJ
bz60cv45s9j	9	41	polishing	polishing	NOUN
bz60cv45s9j	9	42	(	(	PUNCT
bz60cv45s9j	9	43	cmp	cmp	PROPN
bz60cv45s9j	9	44	)	)	PUNCT
bz60cv45s9j	9	45	and	and	CCONJ
bz60cv45s9j	9	46	plasma	plasma	NOUN
bz60cv45s9j	9	47	enhanced	enhance	VERB
bz60cv45s9j	9	48	atomic	atomic	ADJ
bz60cv45s9j	9	49	layer	layer	NOUN
bz60cv45s9j	9	50	deposition	deposition	NOUN
bz60cv45s9j	9	51	(	(	PUNCT
bz60cv45s9j	9	52	peald	peald	ADJ
bz60cv45s9j	9	53	)	)	PUNCT
bz60cv45s9j	9	54	.	.	PUNCT
bz60cv45s9j	10	1	chemical	chemical	ADJ
bz60cv45s9j	10	2	mechanical	mechanical	ADJ
bz60cv45s9j	10	3	polishing	polishing	NOUN
bz60cv45s9j	10	4	provides	provide	VERB
bz60cv45s9j	10	5	a	a	DET
bz60cv45s9j	10	6	path	path	NOUN
bz60cv45s9j	10	7	for	for	ADP
bz60cv45s9j	10	8	tuning	tune	VERB
bz60cv45s9j	10	9	the	the	DET
bz60cv45s9j	10	10	dimensions	dimension	NOUN
bz60cv45s9j	10	11	of	of	ADP
bz60cv45s9j	10	12	the	the	DET
bz60cv45s9j	10	13	tunnel	tunnel	NOUN
bz60cv45s9j	10	14	junctions	junction	NOUN
bz60cv45s9j	10	15	,	,	PUNCT
bz60cv45s9j	10	16	surpassing	surpass	VERB
bz60cv45s9j	10	17	the	the	DET
bz60cv45s9j	10	18	limits	limit	NOUN
bz60cv45s9j	10	19	imposed	impose	VERB
bz60cv45s9j	10	20	by	by	ADP
bz60cv45s9j	10	21	electron	electron	NOUN
bz60cv45s9j	10	22	beam	beam	NOUN
bz60cv45s9j	10	23	lithography	lithography	NOUN
bz60cv45s9j	10	24	and	and	CCONJ
bz60cv45s9j	10	25	lift	lift	NOUN
bz60cv45s9j	10	26	-	-	PUNCT
bz60cv45s9j	10	27	off	off	NOUN
bz60cv45s9j	10	28	,	,	PUNCT
bz60cv45s9j	10	29	while	while	SCONJ
bz60cv45s9j	10	30	atomic	atomic	ADJ
bz60cv45s9j	10	31	layer	layer	NOUN
bz60cv45s9j	10	32	deposition	deposition	NOUN
bz60cv45s9j	10	33	provides	provide	VERB
bz60cv45s9j	10	34	precise	precise	ADJ
bz60cv45s9j	10	35	control	control	NOUN
bz60cv45s9j	10	36	over	over	ADP
bz60cv45s9j	10	37	the	the	DET
bz60cv45s9j	10	38	thickness	thickness	NOUN
bz60cv45s9j	10	39	of	of	ADP
bz60cv45s9j	10	40	the	the	DET
bz60cv45s9j	10	41	tunnel	tunnel	NOUN
bz60cv45s9j	10	42	barrier	barrier	NOUN
bz60cv45s9j	10	43	and	and	CCONJ
bz60cv45s9j	10	44	significantly	significantly	ADV
bz60cv45s9j	10	45	increases	increase	VERB
bz60cv45s9j	10	46	the	the	DET
bz60cv45s9j	10	47	choices	choice	NOUN
bz60cv45s9j	10	48	for	for	ADP
bz60cv45s9j	10	49	barrier	barrier	NOUN
bz60cv45s9j	10	50	materials.as	materials.as	NUM
bz60cv45s9j	10	51	described	describe	VERB
bz60cv45s9j	10	52	below	below	ADP
bz60cv45s9j	10	53	in	in	ADP
bz60cv45s9j	10	54	detail	detail	NOUN
bz60cv45s9j	10	55	,	,	PUNCT
bz60cv45s9j	10	56	the	the	DET
bz60cv45s9j	10	57	fabrication	fabrication	NOUN
bz60cv45s9j	10	58	of	of	ADP
bz60cv45s9j	10	59	ultra	ultra	ADJ
bz60cv45s9j	10	60	-	-	ADJ
bz60cv45s9j	10	61	thin	thin	ADJ
bz60cv45s9j	10	62	(	(	PUNCT
bz60cv45s9j	10	63	~1	~1	NUM
bz60cv45s9j	10	64	nm	nm	PROPN
bz60cv45s9j	10	65	)	)	PUNCT
bz60cv45s9j	10	66	tunnel	tunnel	VERB
bz60cv45s9j	10	67	transparent	transparent	ADJ
bz60cv45s9j	10	68	barriers	barrier	NOUN
bz60cv45s9j	10	69	with	with	ADP
bz60cv45s9j	10	70	peald	peald	ADJ
bz60cv45s9j	10	71	is	be	AUX
bz60cv45s9j	10	72	in	in	ADP
bz60cv45s9j	10	73	fact	fact	NOUN
bz60cv45s9j	10	74	challenging	challenging	ADJ
bz60cv45s9j	10	75	;	;	PUNCT
bz60cv45s9j	10	76	we	we	PRON
bz60cv45s9j	10	77	demonstrate	demonstrate	VERB
bz60cv45s9j	10	78	that	that	SCONJ
bz60cv45s9j	10	79	in	in	ADP
bz60cv45s9j	10	80	fabrication	fabrication	NOUN
bz60cv45s9j	10	81	of	of	ADP
bz60cv45s9j	10	82	sets	set	NOUN
bz60cv45s9j	10	83	with	with	ADP
bz60cv45s9j	10	84	peald	peald	PROPN
bz60cv45s9j	10	85	to	to	PART
bz60cv45s9j	10	86	form	form	VERB
bz60cv45s9j	10	87	the	the	DET
bz60cv45s9j	10	88	barrier	barrier	NOUN
bz60cv45s9j	10	89	in	in	ADP
bz60cv45s9j	10	90	the	the	DET
bz60cv45s9j	10	91	ni	ni	PROPN
bz60cv45s9j	10	92	-	-	PUNCT
bz60cv45s9j	10	93	insulator	insulator	NOUN
bz60cv45s9j	10	94	-	-	PUNCT
bz60cv45s9j	10	95	ni	ni	PROPN
bz60cv45s9j	10	96	tunnel	tunnel	NOUN
bz60cv45s9j	10	97	junctions	junction	NOUN
bz60cv45s9j	10	98	,	,	PUNCT
bz60cv45s9j	10	99	additional	additional	ADJ
bz60cv45s9j	10	100	nio	nio	PROPN
bz60cv45s9j	10	101	layers	layer	NOUN
bz60cv45s9j	10	102	are	be	AUX
bz60cv45s9j	10	103	parasitically	parasitically	ADV
bz60cv45s9j	10	104	formed	form	VERB
bz60cv45s9j	10	105	in	in	ADP
bz60cv45s9j	10	106	the	the	DET
bz60cv45s9j	10	107	ni	ni	PROPN
bz60cv45s9j	10	108	layers	layer	NOUN
bz60cv45s9j	10	109	that	that	PRON
bz60cv45s9j	10	110	form	form	VERB
bz60cv45s9j	10	111	the	the	DET
bz60cv45s9j	10	112	top	top	ADJ
bz60cv45s9j	10	113	and	and	CCONJ
bz60cv45s9j	10	114	bottom	bottom	ADJ
bz60cv45s9j	10	115	electrodes	electrode	NOUN
bz60cv45s9j	10	116	of	of	ADP
bz60cv45s9j	10	117	the	the	DET
bz60cv45s9j	10	118	tunnel	tunnel	NOUN
bz60cv45s9j	10	119	junctions	junction	NOUN
bz60cv45s9j	10	120	.	.	PUNCT
bz60cv45s9j	11	1	the	the	DET
bz60cv45s9j	11	2	nio	nio	NOUN
bz60cv45s9j	11	3	on	on	ADP
bz60cv45s9j	11	4	the	the	DET
bz60cv45s9j	11	5	bottom	bottom	ADJ
bz60cv45s9j	11	6	electrode	electrode	NOUN
bz60cv45s9j	11	7	is	be	AUX
bz60cv45s9j	11	8	formed	form	VERB
bz60cv45s9j	11	9	due	due	ADP
bz60cv45s9j	11	10	to	to	ADP
bz60cv45s9j	11	11	oxidizing	oxidize	VERB
bz60cv45s9j	11	12	effect	effect	NOUN
bz60cv45s9j	11	13	of	of	ADP
bz60cv45s9j	11	14	the	the	DET
bz60cv45s9j	11	15	o2	o2	PROPN
bz60cv45s9j	11	16	plasma	plasma	NOUN
bz60cv45s9j	11	17	used	use	VERB
bz60cv45s9j	11	18	in	in	ADP
bz60cv45s9j	11	19	the	the	DET
bz60cv45s9j	11	20	peald	peald	ADJ
bz60cv45s9j	11	21	process	process	NOUN
bz60cv45s9j	11	22	,	,	PUNCT
bz60cv45s9j	11	23	while	while	SCONJ
bz60cv45s9j	11	24	the	the	DET
bz60cv45s9j	11	25	nio	nio	NOUN
bz60cv45s9j	11	26	on	on	ADP
bz60cv45s9j	11	27	the	the	DET
bz60cv45s9j	11	28	bottom	bottom	NOUN
bz60cv45s9j	11	29	of	of	ADP
bz60cv45s9j	11	30	the	the	DET
bz60cv45s9j	11	31	top	top	ADJ
bz60cv45s9j	11	32	electrode	electrode	NOUN
bz60cv45s9j	11	33	is	be	AUX
bz60cv45s9j	11	34	believed	believe	VERB
bz60cv45s9j	11	35	to	to	PART
bz60cv45s9j	11	36	form	form	VERB
bz60cv45s9j	11	37	during	during	ADP
bz60cv45s9j	11	38	the	the	DET
bz60cv45s9j	11	39	metal	metal	NOUN
bz60cv45s9j	11	40	deposition	deposition	NOUN
bz60cv45s9j	11	41	due	due	ADP
bz60cv45s9j	11	42	to	to	ADP
bz60cv45s9j	11	43	oxygen	oxygen	NOUN
bz60cv45s9j	11	44	-	-	PUNCT
bz60cv45s9j	11	45	containing	contain	VERB
bz60cv45s9j	11	46	contaminants	contaminant	NOUN
bz60cv45s9j	11	47	on	on	ADP
bz60cv45s9j	11	48	the	the	DET
bz60cv45s9j	11	49	surface	surface	NOUN
bz60cv45s9j	11	50	of	of	ADP
bz60cv45s9j	11	51	the	the	DET
bz60cv45s9j	11	52	deposited	deposit	VERB
bz60cv45s9j	11	53	tunnel	tunnel	NOUN
bz60cv45s9j	11	54	barrier	barrier	NOUN
bz60cv45s9j	11	55	.	.	PUNCT
bz60cv45s9j	12	1	we	we	PRON
bz60cv45s9j	12	2	also	also	ADV
bz60cv45s9j	12	3	show	show	VERB
bz60cv45s9j	12	4	that	that	SCONJ
bz60cv45s9j	12	5	due	due	ADP
bz60cv45s9j	12	6	to	to	ADP
bz60cv45s9j	12	7	the	the	DET
bz60cv45s9j	12	8	presence	presence	NOUN
bz60cv45s9j	12	9	of	of	ADP
bz60cv45s9j	12	10	these	these	DET
bz60cv45s9j	12	11	surface	surface	NOUN
bz60cv45s9j	12	12	parasitic	parasitic	ADJ
bz60cv45s9j	12	13	layers	layer	NOUN
bz60cv45s9j	12	14	of	of	ADP
bz60cv45s9j	12	15	nio	nio	NOUN
bz60cv45s9j	12	16	,	,	PUNCT
bz60cv45s9j	12	17	the	the	DET
bz60cv45s9j	12	18	resistance	resistance	NOUN
bz60cv45s9j	12	19	of	of	ADP
bz60cv45s9j	12	20	ni	ni	PROPN
bz60cv45s9j	12	21	-	-	PUNCT
bz60cv45s9j	12	22	insulator	insulator	NOUN
bz60cv45s9j	12	23	-	-	PUNCT
bz60cv45s9j	12	24	ni	ni	PROPN
bz60cv45s9j	12	25	tunnel	tunnel	NOUN
bz60cv45s9j	12	26	junctions	junction	NOUN
bz60cv45s9j	12	27	is	be	AUX
bz60cv45s9j	12	28	drastically	drastically	ADV
bz60cv45s9j	12	29	increased	increase	VERB
bz60cv45s9j	12	30	.	.	PUNCT
bz60cv45s9j	13	1	moreover	moreover	ADV
bz60cv45s9j	13	2	,	,	PUNCT
bz60cv45s9j	13	3	the	the	DET
bz60cv45s9j	13	4	transport	transport	NOUN
bz60cv45s9j	13	5	mechanism	mechanism	NOUN
bz60cv45s9j	13	6	is	be	AUX
bz60cv45s9j	13	7	changed	change	VERB
bz60cv45s9j	13	8	from	from	ADP
bz60cv45s9j	13	9	quantum	quantum	NOUN
bz60cv45s9j	13	10	tunneling	tunneling	NOUN
bz60cv45s9j	13	11	through	through	ADP
bz60cv45s9j	13	12	the	the	DET
bz60cv45s9j	13	13	dielectric	dielectric	ADJ
bz60cv45s9j	13	14	barrier	barrier	NOUN
bz60cv45s9j	13	15	to	to	ADP
bz60cv45s9j	13	16	one	one	NUM
bz60cv45s9j	13	17	consistent	consistent	ADJ
bz60cv45s9j	13	18	with	with	ADP
bz60cv45s9j	13	19	the	the	DET
bz60cv45s9j	13	20	tunnel	tunnel	NOUN
bz60cv45s9j	13	21	barrier	barrier	NOUN
bz60cv45s9j	13	22	in	in	ADP
bz60cv45s9j	13	23	series	series	NOUN
bz60cv45s9j	13	24	with	with	ADP
bz60cv45s9j	13	25	compound	compound	NOUN
bz60cv45s9j	13	26	layers	layer	NOUN
bz60cv45s9j	13	27	of	of	ADP
bz60cv45s9j	13	28	nio	nio	NOUN
bz60cv45s9j	13	29	and	and	CCONJ
bz60cv45s9j	13	30	possibly	possibly	ADV
bz60cv45s9j	13	31	,	,	PUNCT
bz60cv45s9j	13	32	nisixoy	nisixoy	PROPN
bz60cv45s9j	13	33	.	.	PUNCT
bz60cv45s9j	14	1	the	the	DET
bz60cv45s9j	14	2	parasitic	parasitic	ADJ
bz60cv45s9j	14	3	component	component	NOUN
bz60cv45s9j	14	4	in	in	ADP
bz60cv45s9j	14	5	the	the	DET
bz60cv45s9j	14	6	tunnel	tunnel	NOUN
bz60cv45s9j	14	7	junctions	junction	NOUN
bz60cv45s9j	14	8	results	result	NOUN
bz60cv45s9j	14	9	in	in	ADP
bz60cv45s9j	14	10	conduction	conduction	NOUN
bz60cv45s9j	14	11	freeze	freeze	NOUN
bz60cv45s9j	14	12	-	-	PUNCT
bz60cv45s9j	14	13	out	out	NOUN
bz60cv45s9j	14	14	at	at	ADP
bz60cv45s9j	14	15	low	low	ADJ
bz60cv45s9j	14	16	temperatures	temperature	NOUN
bz60cv45s9j	14	17	,	,	PUNCT
bz60cv45s9j	14	18	deviation	deviation	NOUN
bz60cv45s9j	14	19	of	of	ADP
bz60cv45s9j	14	20	junction	junction	NOUN
bz60cv45s9j	14	21	parameters	parameter	NOUN
bz60cv45s9j	14	22	from	from	ADP
bz60cv45s9j	14	23	ideal	ideal	ADJ
bz60cv45s9j	14	24	model	model	NOUN
bz60cv45s9j	14	25	,	,	PUNCT
bz60cv45s9j	14	26	and	and	CCONJ
bz60cv45s9j	14	27	excessive	excessive	ADJ
bz60cv45s9j	14	28	noise	noise	NOUN
bz60cv45s9j	14	29	in	in	ADP
bz60cv45s9j	14	30	the	the	DET
bz60cv45s9j	14	31	device	device	NOUN
bz60cv45s9j	14	32	.	.	PUNCT
bz60cv45s9j	15	1	the	the	DET
bz60cv45s9j	15	2	reduction	reduction	NOUN
bz60cv45s9j	15	3	of	of	ADP
bz60cv45s9j	15	4	nio	nio	PROPN
bz60cv45s9j	15	5	to	to	ADP
bz60cv45s9j	15	6	ni	ni	PROPN
bz60cv45s9j	15	7	is	be	AUX
bz60cv45s9j	15	8	therefore	therefore	ADV
bz60cv45s9j	15	9	necessary	necessary	ADJ
bz60cv45s9j	15	10	to	to	PART
bz60cv45s9j	15	11	restore	restore	VERB
bz60cv45s9j	15	12	the	the	DET
bz60cv45s9j	15	13	metal	metal	NOUN
bz60cv45s9j	15	14	-	-	PUNCT
bz60cv45s9j	15	15	insulator	insulator	NOUN
bz60cv45s9j	15	16	-	-	PUNCT
bz60cv45s9j	15	17	metal	metal	NOUN
bz60cv45s9j	15	18	structure	structure	NOUN
bz60cv45s9j	15	19	of	of	ADP
bz60cv45s9j	15	20	the	the	DET
bz60cv45s9j	15	21	junctions	junction	NOUN
bz60cv45s9j	15	22	.	.	PUNCT
bz60cv45s9j	16	1	we	we	PRON
bz60cv45s9j	16	2	have	have	AUX
bz60cv45s9j	16	3	studied	study	VERB
bz60cv45s9j	16	4	forming	form	VERB
bz60cv45s9j	16	5	gas	gas	NOUN
bz60cv45s9j	16	6	anneal	anneal	NOUN
bz60cv45s9j	16	7	as	as	ADV
bz60cv45s9j	16	8	well	well	ADV
bz60cv45s9j	16	9	as	as	ADP
bz60cv45s9j	16	10	h2	h2	NOUN
bz60cv45s9j	16	11	plasma	plasma	NOUN
bz60cv45s9j	16	12	treatment	treatment	NOUN
bz60cv45s9j	16	13	as	as	ADP
bz60cv45s9j	16	14	techniques	technique	NOUN
bz60cv45s9j	16	15	to	to	PART
bz60cv45s9j	16	16	reduce	reduce	VERB
bz60cv45s9j	16	17	the	the	DET
bz60cv45s9j	16	18	nio	nio	NOUN
bz60cv45s9j	16	19	layers	layer	NOUN
bz60cv45s9j	16	20	that	that	PRON
bz60cv45s9j	16	21	are	be	AUX
bz60cv45s9j	16	22	parasitically	parasitically	ADV
bz60cv45s9j	16	23	formed	form	VERB
bz60cv45s9j	16	24	in	in	ADP
bz60cv45s9j	16	25	the	the	DET
bz60cv45s9j	16	26	junctions	junction	NOUN
bz60cv45s9j	16	27	.	.	PUNCT
bz60cv45s9j	17	1	using	use	VERB
bz60cv45s9j	17	2	either	either	PRON
bz60cv45s9j	17	3	of	of	ADP
bz60cv45s9j	17	4	these	these	DET
bz60cv45s9j	17	5	two	two	NUM
bz60cv45s9j	17	6	techniques	technique	NOUN
bz60cv45s9j	17	7	,	,	PUNCT
bz60cv45s9j	17	8	we	we	PRON
bz60cv45s9j	17	9	reduced	reduce	VERB
bz60cv45s9j	17	10	the	the	DET
bz60cv45s9j	17	11	nio	nio	NOUN
bz60cv45s9j	17	12	formed	form	VERB
bz60cv45s9j	17	13	on	on	ADP
bz60cv45s9j	17	14	the	the	DET
bz60cv45s9j	17	15	island	island	NOUN
bz60cv45s9j	17	16	after	after	ADP
bz60cv45s9j	17	17	being	be	AUX
bz60cv45s9j	17	18	covered	cover	VERB
bz60cv45s9j	17	19	with	with	ADP
bz60cv45s9j	17	20	the	the	DET
bz60cv45s9j	17	21	peald	peald	ADJ
bz60cv45s9j	17	22	dielectric	dielectric	NOUN
bz60cv45s9j	17	23	and	and	CCONJ
bz60cv45s9j	17	24	before	before	ADP
bz60cv45s9j	17	25	defining	define	VERB
bz60cv45s9j	17	26	the	the	DET
bz60cv45s9j	17	27	top	top	ADJ
bz60cv45s9j	17	28	source	source	NOUN
bz60cv45s9j	17	29	and	and	CCONJ
bz60cv45s9j	17	30	drain	drain	NOUN
bz60cv45s9j	17	31	.	.	PUNCT
bz60cv45s9j	18	1	later	later	ADV
bz60cv45s9j	18	2	,	,	PUNCT
bz60cv45s9j	18	3	the	the	DET
bz60cv45s9j	18	4	nio	nio	NOUN
bz60cv45s9j	18	5	formed	form	VERB
bz60cv45s9j	18	6	on	on	ADP
bz60cv45s9j	18	7	the	the	DET
bz60cv45s9j	18	8	bottom	bottom	NOUN
bz60cv45s9j	18	9	of	of	ADP
bz60cv45s9j	18	10	the	the	DET
bz60cv45s9j	18	11	source	source	NOUN
bz60cv45s9j	18	12	/	/	SYM
bz60cv45s9j	18	13	drain	drain	NOUN
bz60cv45s9j	18	14	is	be	AUX
bz60cv45s9j	18	15	reduced	reduce	VERB
bz60cv45s9j	18	16	during	during	ADP
bz60cv45s9j	18	17	a	a	DET
bz60cv45s9j	18	18	second	second	ADJ
bz60cv45s9j	18	19	reducing	reduce	VERB
bz60cv45s9j	18	20	step	step	NOUN
bz60cv45s9j	18	21	after	after	SCONJ
bz60cv45s9j	18	22	the	the	DET
bz60cv45s9j	18	23	source	source	NOUN
bz60cv45s9j	18	24	/	/	SYM
bz60cv45s9j	18	25	drain	drain	NOUN
bz60cv45s9j	18	26	are	be	AUX
bz60cv45s9j	18	27	formed	form	VERB
bz60cv45s9j	18	28	on	on	ADP
bz60cv45s9j	18	29	the	the	DET
bz60cv45s9j	18	30	tunnel	tunnel	NOUN
bz60cv45s9j	18	31	barrier	barrier	NOUN
bz60cv45s9j	18	32	.	.	PUNCT
bz60cv45s9j	19	1	electrical	electrical	ADJ
bz60cv45s9j	19	2	characterization	characterization	NOUN
bz60cv45s9j	19	3	of	of	ADP
bz60cv45s9j	19	4	sets	set	NOUN
bz60cv45s9j	19	5	that	that	PRON
bz60cv45s9j	19	6	are	be	AUX
bz60cv45s9j	19	7	made	make	VERB
bz60cv45s9j	19	8	with	with	ADP
bz60cv45s9j	19	9	the	the	DET
bz60cv45s9j	19	10	proposed	propose	VERB
bz60cv45s9j	19	11	reducing	reduce	VERB
bz60cv45s9j	19	12	treatments	treatment	NOUN
bz60cv45s9j	19	13	enable	enable	VERB
bz60cv45s9j	19	14	us	we	PRON
bz60cv45s9j	19	15	to	to	PART
bz60cv45s9j	19	16	study	study	VERB
bz60cv45s9j	19	17	the	the	DET
bz60cv45s9j	19	18	effect	effect	NOUN
bz60cv45s9j	19	19	of	of	ADP
bz60cv45s9j	19	20	each	each	DET
bz60cv45s9j	19	21	reducing	reduce	VERB
bz60cv45s9j	19	22	process	process	NOUN
bz60cv45s9j	19	23	on	on	ADP
bz60cv45s9j	19	24	the	the	DET
bz60cv45s9j	19	25	properties	property	NOUN
bz60cv45s9j	19	26	of	of	ADP
bz60cv45s9j	19	27	the	the	DET
bz60cv45s9j	19	28	constituent	constituent	NOUN
bz60cv45s9j	19	29	tunnel	tunnel	NOUN
bz60cv45s9j	19	30	junctions	junction	NOUN
bz60cv45s9j	19	31	.	.	PUNCT
bz60cv45s9j	20	1	in	in	ADP
bz60cv45s9j	20	2	comparison	comparison	NOUN
bz60cv45s9j	20	3	to	to	ADP
bz60cv45s9j	20	4	the	the	DET
bz60cv45s9j	20	5	junctions	junction	NOUN
bz60cv45s9j	20	6	annealed	anneal	VERB
bz60cv45s9j	20	7	twice	twice	ADV
bz60cv45s9j	20	8	in	in	ADP
bz60cv45s9j	20	9	forming	form	VERB
bz60cv45s9j	20	10	gas	gas	NOUN
bz60cv45s9j	20	11	at	at	ADP
bz60cv45s9j	20	12	400	400	NUM
bz60cv45s9j	20	13	°	°	NOUN
bz60cv45s9j	20	14	c	c	NOUN
bz60cv45s9j	20	15	,	,	PUNCT
bz60cv45s9j	20	16	we	we	PRON
bz60cv45s9j	20	17	consistently	consistently	ADV
bz60cv45s9j	20	18	observed	observe	VERB
bz60cv45s9j	20	19	a	a	DET
bz60cv45s9j	20	20	~10×	~10×	NOUN
bz60cv45s9j	20	21	higher	high	ADJ
bz60cv45s9j	20	22	conductance	conductance	NOUN
bz60cv45s9j	20	23	in	in	ADP
bz60cv45s9j	20	24	devices	device	NOUN
bz60cv45s9j	20	25	treated	treat	VERB
bz60cv45s9j	20	26	twice	twice	ADV
bz60cv45s9j	20	27	with	with	ADP
bz60cv45s9j	20	28	h2	h2	NOUN
bz60cv45s9j	20	29	plasma	plasma	NOUN
bz60cv45s9j	20	30	at	at	ADP
bz60cv45s9j	20	31	300	300	NUM
bz60cv45s9j	20	32	°	°	NUM
bz60cv45s9j	20	33	c	c	PROPN
bz60cv45s9j	20	34	.	.	PUNCT
bz60cv45s9j	21	1	the	the	DET
bz60cv45s9j	21	2	possible	possible	ADJ
bz60cv45s9j	21	3	damage	damage	NOUN
bz60cv45s9j	21	4	to	to	ADP
bz60cv45s9j	21	5	the	the	DET
bz60cv45s9j	21	6	barrier	barrier	NOUN
bz60cv45s9j	21	7	during	during	ADP
bz60cv45s9j	21	8	the	the	DET
bz60cv45s9j	21	9	plasma	plasma	NOUN
bz60cv45s9j	21	10	treatment	treatment	NOUN
bz60cv45s9j	21	11	and	and	CCONJ
bz60cv45s9j	21	12	thermally	thermally	ADV
bz60cv45s9j	21	13	induced	induce	VERB
bz60cv45s9j	21	14	film	film	NOUN
bz60cv45s9j	21	15	deformation	deformation	NOUN
bz60cv45s9j	21	16	during	during	ADP
bz60cv45s9j	21	17	the	the	DET
bz60cv45s9j	21	18	anneal	anneal	NOUN
bz60cv45s9j	21	19	which	which	PRON
bz60cv45s9j	21	20	respectively	respectively	ADV
bz60cv45s9j	21	21	,	,	PUNCT
bz60cv45s9j	21	22	is	be	AUX
bz60cv45s9j	21	23	believed	believe	VERB
bz60cv45s9j	21	24	to	to	PART
bz60cv45s9j	21	25	increase	increase	VERB
bz60cv45s9j	21	26	and	and	CCONJ
bz60cv45s9j	21	27	lower	lower	VERB
bz60cv45s9j	21	28	the	the	DET
bz60cv45s9j	21	29	conductance	conductance	NOUN
bz60cv45s9j	21	30	are	be	AUX
bz60cv45s9j	21	31	among	among	ADP
bz60cv45s9j	21	32	the	the	DET
bz60cv45s9j	21	33	possible	possible	ADJ
bz60cv45s9j	21	34	cause	cause	NOUN
bz60cv45s9j	21	35	of	of	ADP
bz60cv45s9j	21	36	this	this	DET
bz60cv45s9j	21	37	difference	difference	NOUN
bz60cv45s9j	21	38	.	.	PUNCT
bz60cv45s9j	22	1	although	although	SCONJ
bz60cv45s9j	22	2	both	both	DET
bz60cv45s9j	22	3	types	type	NOUN
bz60cv45s9j	22	4	of	of	ADP
bz60cv45s9j	22	5	treatments	treatment	NOUN
bz60cv45s9j	22	6	were	be	AUX
bz60cv45s9j	22	7	effective	effective	ADJ
bz60cv45s9j	22	8	in	in	ADP
bz60cv45s9j	22	9	alleviating	alleviate	VERB
bz60cv45s9j	22	10	the	the	DET
bz60cv45s9j	22	11	effect	effect	NOUN
bz60cv45s9j	22	12	of	of	ADP
bz60cv45s9j	22	13	the	the	DET
bz60cv45s9j	22	14	activated	activate	VERB
bz60cv45s9j	22	15	components	component	NOUN
bz60cv45s9j	22	16	in	in	ADP
bz60cv45s9j	22	17	the	the	DET
bz60cv45s9j	22	18	junctions	junction	NOUN
bz60cv45s9j	22	19	,	,	PUNCT
bz60cv45s9j	22	20	all	all	DET
bz60cv45s9j	22	21	the	the	DET
bz60cv45s9j	22	22	devices	device	NOUN
bz60cv45s9j	22	23	that	that	PRON
bz60cv45s9j	22	24	were	be	AUX
bz60cv45s9j	22	25	treated	treat	VERB
bz60cv45s9j	22	26	by	by	ADP
bz60cv45s9j	22	27	two	two	NUM
bz60cv45s9j	22	28	anneal	anneal	ADJ
bz60cv45s9j	22	29	steps	step	NOUN
bz60cv45s9j	22	30	or	or	CCONJ
bz60cv45s9j	22	31	by	by	ADP
bz60cv45s9j	22	32	two	two	NUM
bz60cv45s9j	22	33	h2	h2	NOUN
bz60cv45s9j	22	34	plasma	plasma	NOUN
bz60cv45s9j	22	35	steps	step	NOUN
bz60cv45s9j	22	36	(	(	PUNCT
bz60cv45s9j	22	37	for	for	ADP
bz60cv45s9j	22	38	reducing	reduce	VERB
bz60cv45s9j	22	39	the	the	DET
bz60cv45s9j	22	40	top	top	ADJ
bz60cv45s9j	22	41	and	and	CCONJ
bz60cv45s9j	22	42	bottom	bottom	ADJ
bz60cv45s9j	22	43	nio	nio	PROPN
bz60cv45s9j	22	44	)	)	PUNCT
bz60cv45s9j	22	45	show	show	VERB
bz60cv45s9j	22	46	deviations	deviation	NOUN
bz60cv45s9j	22	47	from	from	ADP
bz60cv45s9j	22	48	ideal	ideal	ADJ
bz60cv45s9j	22	49	simulated	simulate	VERB
bz60cv45s9j	22	50	mim	mim	PROPN
bz60cv45s9j	22	51	set	set	NOUN
bz60cv45s9j	22	52	model	model	NOUN
bz60cv45s9j	22	53	and	and	CCONJ
bz60cv45s9j	22	54	suffer	suffer	VERB
bz60cv45s9j	22	55	from	from	ADP
bz60cv45s9j	22	56	significant	significant	ADJ
bz60cv45s9j	22	57	random	random	ADJ
bz60cv45s9j	22	58	telegraph	telegraph	NOUN
bz60cv45s9j	22	59	signal	signal	NOUN
bz60cv45s9j	22	60	(	(	PUNCT
bz60cv45s9j	22	61	rts	rts	PROPN
bz60cv45s9j	22	62	)	)	PUNCT
bz60cv45s9j	22	63	noise	noise	NOUN
bz60cv45s9j	22	64	.	.	PUNCT
bz60cv45s9j	23	1	however	however	ADV
bz60cv45s9j	23	2	,	,	PUNCT
bz60cv45s9j	23	3	our	our	PRON
bz60cv45s9j	23	4	results	result	NOUN
bz60cv45s9j	23	5	show	show	VERB
bz60cv45s9j	23	6	that	that	SCONJ
bz60cv45s9j	23	7	by	by	ADP
bz60cv45s9j	23	8	using	use	VERB
bz60cv45s9j	23	9	forming	form	VERB
bz60cv45s9j	23	10	gas	gas	NOUN
bz60cv45s9j	23	11	anneal	anneal	NOUN
bz60cv45s9j	23	12	for	for	ADP
bz60cv45s9j	23	13	bottom	bottom	ADJ
bz60cv45s9j	23	14	nio	nio	PROPN
bz60cv45s9j	23	15	reduction	reduction	NOUN
bz60cv45s9j	23	16	and	and	CCONJ
bz60cv45s9j	23	17	h2	h2	NOUN
bz60cv45s9j	23	18	plasma	plasma	NOUN
bz60cv45s9j	23	19	for	for	ADP
bz60cv45s9j	23	20	the	the	DET
bz60cv45s9j	23	21	top	top	ADJ
bz60cv45s9j	23	22	nio	nio	NOUN
bz60cv45s9j	23	23	reduction	reduction	NOUN
bz60cv45s9j	23	24	,	,	PUNCT
bz60cv45s9j	23	25	one	one	PRON
bz60cv45s9j	23	26	can	can	AUX
bz60cv45s9j	23	27	achieve	achieve	VERB
bz60cv45s9j	23	28	devices	device	NOUN
bz60cv45s9j	23	29	close	close	ADJ
bz60cv45s9j	23	30	to	to	ADP
bz60cv45s9j	23	31	ideal	ideal	ADJ
bz60cv45s9j	23	32	mim	mim	PROPN
bz60cv45s9j	23	33	sets	set	NOUN
bz60cv45s9j	23	34	with	with	ADP
bz60cv45s9j	23	35	significantly	significantly	ADV
bz60cv45s9j	23	36	less	less	ADJ
bz60cv45s9j	23	37	noise	noise	NOUN
bz60cv45s9j	23	38	.	.	PUNCT