id	sid	tid	token	lemma	pos
bn999595z5c	1	1	in	in	ADP
bn999595z5c	1	2	this	this	DET
bn999595z5c	1	3	work	work	NOUN
bn999595z5c	1	4	,	,	PUNCT
bn999595z5c	1	5	two	two	NUM
bn999595z5c	1	6	avenues	avenue	NOUN
bn999595z5c	1	7	for	for	ADP
bn999595z5c	1	8	potentially	potentially	ADV
bn999595z5c	1	9	improving	improve	VERB
bn999595z5c	1	10	the	the	DET
bn999595z5c	1	11	performance	performance	NOUN
bn999595z5c	1	12	of	of	ADP
bn999595z5c	1	13	future	future	ADJ
bn999595z5c	1	14	electronic	electronic	ADJ
bn999595z5c	1	15	and	and	CCONJ
bn999595z5c	1	16	optoelectronic	optoelectronic	ADJ
bn999595z5c	1	17	devices	device	NOUN
bn999595z5c	1	18	have	have	AUX
bn999595z5c	1	19	been	be	AUX
bn999595z5c	1	20	explored	explore	VERB
bn999595z5c	1	21	.	.	PUNCT
bn999595z5c	2	1	backside	backside	NOUN
bn999595z5c	2	2	contact	contact	NOUN
bn999595z5c	2	3	technology	technology	NOUN
bn999595z5c	2	4	for	for	ADP
bn999595z5c	2	5	high	high	ADJ
bn999595z5c	2	6	-	-	PUNCT
bn999595z5c	2	7	performance	performance	NOUN
bn999595z5c	2	8	iii	iii	NUM
bn999595z5c	2	9	-	-	PUNCT
bn999595z5c	2	10	v	v	NOUN
bn999595z5c	2	11	solar	solar	ADJ
bn999595z5c	2	12	cells	cell	NOUN
bn999595z5c	2	13	and	and	CCONJ
bn999595z5c	2	14	the	the	DET
bn999595z5c	2	15	exploration	exploration	NOUN
bn999595z5c	2	16	of	of	ADP
bn999595z5c	2	17	plasma	plasma	NOUN
bn999595z5c	2	18	-	-	PUNCT
bn999595z5c	2	19	wave	wave	NOUN
bn999595z5c	2	20	effects	effect	NOUN
bn999595z5c	2	21	in	in	ADP
bn999595z5c	2	22	gan	gan	PROPN
bn999595z5c	2	23	have	have	AUX
bn999595z5c	2	24	been	be	AUX
bn999595z5c	2	25	developed	develop	VERB
bn999595z5c	2	26	and	and	CCONJ
bn999595z5c	2	27	evaluated	evaluate	VERB
bn999595z5c	2	28	.	.	PUNCT
bn999595z5c	3	1	for	for	ADP
bn999595z5c	3	2	the	the	DET
bn999595z5c	3	3	backside	backside	ADJ
bn999595z5c	3	4	contact	contact	NOUN
bn999595z5c	3	5	solar	solar	ADJ
bn999595z5c	3	6	cell	cell	NOUN
bn999595z5c	3	7	technology	technology	NOUN
bn999595z5c	3	8	,	,	PUNCT
bn999595z5c	3	9	we	we	PRON
bn999595z5c	3	10	analyzed	analyze	VERB
bn999595z5c	3	11	the	the	DET
bn999595z5c	3	12	performance	performance	NOUN
bn999595z5c	3	13	of	of	ADP
bn999595z5c	3	14	an	an	DET
bn999595z5c	3	15	advanced	advanced	ADJ
bn999595z5c	3	16	novel	novel	NOUN
bn999595z5c	3	17	design	design	NOUN
bn999595z5c	3	18	for	for	ADP
bn999595z5c	3	19	iii	iii	NUM
bn999595z5c	3	20	-	-	PUNCT
bn999595z5c	3	21	v	v	NOUN
bn999595z5c	3	22	multi	multi	ADJ
bn999595z5c	3	23	-	-	ADJ
bn999595z5c	3	24	junction	junction	ADJ
bn999595z5c	3	25	solar	solar	ADJ
bn999595z5c	3	26	cells	cell	NOUN
bn999595z5c	3	27	—	—	PUNCT
bn999595z5c	3	28	the	the	DET
bn999595z5c	3	29	backside	backside	NOUN
bn999595z5c	3	30	contact	contact	NOUN
bn999595z5c	3	31	iii	iii	PROPN
bn999595z5c	3	32	-	-	PUNCT
bn999595z5c	3	33	v	v	ADJ
bn999595z5c	3	34	triple	triple	ADJ
bn999595z5c	3	35	-	-	PUNCT
bn999595z5c	3	36	junction	junction	NOUN
bn999595z5c	3	37	solar	solar	ADJ
bn999595z5c	3	38	cell	cell	NOUN
bn999595z5c	3	39	.	.	PUNCT
bn999595z5c	4	1	for	for	ADP
bn999595z5c	4	2	the	the	DET
bn999595z5c	4	3	study	study	NOUN
bn999595z5c	4	4	of	of	ADP
bn999595z5c	4	5	plasma	plasma	NOUN
bn999595z5c	4	6	-	-	PUNCT
bn999595z5c	4	7	wave	wave	NOUN
bn999595z5c	4	8	effects	effect	NOUN
bn999595z5c	4	9	,	,	PUNCT
bn999595z5c	4	10	we	we	PRON
bn999595z5c	4	11	have	have	AUX
bn999595z5c	4	12	focused	focus	VERB
bn999595z5c	4	13	on	on	ADP
bn999595z5c	4	14	observing	observe	VERB
bn999595z5c	4	15	and	and	CCONJ
bn999595z5c	4	16	studying	study	VERB
bn999595z5c	4	17	plasma	plasma	NOUN
bn999595z5c	4	18	-	-	PUNCT
bn999595z5c	4	19	wave	wave	NOUN
bn999595z5c	4	20	effects	effect	NOUN
bn999595z5c	4	21	in	in	ADP
bn999595z5c	4	22	iii	iii	NUM
bn999595z5c	4	23	-	-	PUNCT
bn999595z5c	4	24	n	n	NOUN
bn999595z5c	4	25	plasmonic	plasmonic	ADJ
bn999595z5c	4	26	devices	device	NOUN
bn999595z5c	4	27	at	at	ADP
bn999595z5c	4	28	room	room	NOUN
bn999595z5c	4	29	temperature	temperature	NOUN
bn999595z5c	4	30	.	.	PUNCT
bn999595z5c	5	1	the	the	DET
bn999595z5c	5	2	fabrication	fabrication	NOUN
bn999595z5c	5	3	of	of	ADP
bn999595z5c	5	4	both	both	DET
bn999595z5c	5	5	backside	backside	NOUN
bn999595z5c	5	6	contact	contact	NOUN
bn999595z5c	5	7	solar	solar	ADJ
bn999595z5c	5	8	cells	cell	NOUN
bn999595z5c	5	9	and	and	CCONJ
bn999595z5c	5	10	iii	iii	NUM
bn999595z5c	5	11	-	-	PUNCT
bn999595z5c	5	12	n	n	NOUN
bn999595z5c	5	13	plasma	plasma	NOUN
bn999595z5c	5	14	-	-	PUNCT
bn999595z5c	5	15	wave	wave	NOUN
bn999595z5c	5	16	devices	device	NOUN
bn999595z5c	5	17	is	be	AUX
bn999595z5c	5	18	discussed	discuss	VERB
bn999595z5c	5	19	.	.	PUNCT
bn999595z5c	6	1	backside	backside	NOUN
bn999595z5c	6	2	contact	contact	NOUN
bn999595z5c	6	3	technology	technology	NOUN
bn999595z5c	6	4	has	have	AUX
bn999595z5c	6	5	been	be	AUX
bn999595z5c	6	6	demonstrated	demonstrate	VERB
bn999595z5c	6	7	successfully	successfully	ADV
bn999595z5c	6	8	in	in	ADP
bn999595z5c	6	9	silicon	silicon	NOUN
bn999595z5c	6	10	solar	solar	ADJ
bn999595z5c	6	11	cells	cell	NOUN
bn999595z5c	6	12	,	,	PUNCT
bn999595z5c	6	13	but	but	CCONJ
bn999595z5c	6	14	has	have	AUX
bn999595z5c	6	15	not	not	PART
bn999595z5c	6	16	been	be	AUX
bn999595z5c	6	17	explored	explore	VERB
bn999595z5c	6	18	carefully	carefully	ADV
bn999595z5c	6	19	or	or	CCONJ
bn999595z5c	6	20	demonstrated	demonstrate	VERB
bn999595z5c	6	21	in	in	ADP
bn999595z5c	6	22	iii	iii	NUM
bn999595z5c	6	23	-	-	PUNCT
bn999595z5c	6	24	v	v	NOUN
bn999595z5c	6	25	multi	multi	ADJ
bn999595z5c	6	26	-	-	ADJ
bn999595z5c	6	27	junction	junction	ADJ
bn999595z5c	6	28	solar	solar	ADJ
bn999595z5c	6	29	cells	cell	NOUN
bn999595z5c	6	30	so	so	ADV
bn999595z5c	6	31	far	far	ADV
bn999595z5c	6	32	.	.	PUNCT
bn999595z5c	7	1	in	in	ADP
bn999595z5c	7	2	this	this	DET
bn999595z5c	7	3	work	work	NOUN
bn999595z5c	7	4	,	,	PUNCT
bn999595z5c	7	5	a	a	DET
bn999595z5c	7	6	numerical	numerical	ADJ
bn999595z5c	7	7	model	model	NOUN
bn999595z5c	7	8	was	be	AUX
bn999595z5c	7	9	developed	develop	VERB
bn999595z5c	7	10	to	to	PART
bn999595z5c	7	11	evaluate	evaluate	VERB
bn999595z5c	7	12	and	and	CCONJ
bn999595z5c	7	13	optimize	optimize	VERB
bn999595z5c	7	14	both	both	CCONJ
bn999595z5c	7	15	the	the	DET
bn999595z5c	7	16	electrical	electrical	ADJ
bn999595z5c	7	17	and	and	CCONJ
bn999595z5c	7	18	thermal	thermal	ADJ
bn999595z5c	7	19	properties	property	NOUN
bn999595z5c	7	20	of	of	ADP
bn999595z5c	7	21	backside	backside	NOUN
bn999595z5c	7	22	-	-	PUNCT
bn999595z5c	7	23	contact	contact	NOUN
bn999595z5c	7	24	triple	triple	ADJ
bn999595z5c	7	25	-	-	PUNCT
bn999595z5c	7	26	junction	junction	NOUN
bn999595z5c	7	27	solar	solar	ADJ
bn999595z5c	7	28	cells	cell	NOUN
bn999595z5c	7	29	.	.	PUNCT
bn999595z5c	8	1	the	the	DET
bn999595z5c	8	2	optimization	optimization	NOUN
bn999595z5c	8	3	of	of	ADP
bn999595z5c	8	4	the	the	DET
bn999595z5c	8	5	epitaxial	epitaxial	ADJ
bn999595z5c	8	6	structure	structure	NOUN
bn999595z5c	8	7	resulted	result	VERB
bn999595z5c	8	8	in	in	ADP
bn999595z5c	8	9	a	a	DET
bn999595z5c	8	10	14	14	NUM
bn999595z5c	8	11	%	%	NOUN
bn999595z5c	8	12	(	(	PUNCT
bn999595z5c	8	13	relative	relative	ADJ
bn999595z5c	8	14	)	)	PUNCT
bn999595z5c	8	15	efficiency	efficiency	NOUN
bn999595z5c	8	16	improvement	improvement	NOUN
bn999595z5c	8	17	and	and	CCONJ
bn999595z5c	8	18	the	the	DET
bn999595z5c	8	19	backside	backside	NOUN
bn999595z5c	8	20	-	-	PUNCT
bn999595z5c	8	21	contact	contact	NOUN
bn999595z5c	8	22	technology	technology	NOUN
bn999595z5c	8	23	results	result	NOUN
bn999595z5c	8	24	in	in	ADP
bn999595z5c	8	25	another	another	DET
bn999595z5c	8	26	5	5	NUM
bn999595z5c	8	27	%	%	NOUN
bn999595z5c	8	28	(	(	PUNCT
bn999595z5c	8	29	relative	relative	ADJ
bn999595z5c	8	30	)	)	PUNCT
bn999595z5c	8	31	efficiency	efficiency	NOUN
bn999595z5c	8	32	enhancement	enhancement	NOUN
bn999595z5c	8	33	.	.	PUNCT
bn999595z5c	9	1	for	for	ADP
bn999595z5c	9	2	the	the	DET
bn999595z5c	9	3	fabrication	fabrication	NOUN
bn999595z5c	9	4	and	and	CCONJ
bn999595z5c	9	5	ultimately	ultimately	ADV
bn999595z5c	9	6	the	the	DET
bn999595z5c	9	7	demonstration	demonstration	NOUN
bn999595z5c	9	8	of	of	ADP
bn999595z5c	9	9	backside	backside	NOUN
bn999595z5c	9	10	-	-	PUNCT
bn999595z5c	9	11	contact	contact	NOUN
bn999595z5c	9	12	triple	triple	ADJ
bn999595z5c	9	13	-	-	PUNCT
bn999595z5c	9	14	junction	junction	NOUN
bn999595z5c	9	15	solar	solar	ADJ
bn999595z5c	9	16	cells	cell	NOUN
bn999595z5c	9	17	,	,	PUNCT
bn999595z5c	9	18	the	the	DET
bn999595z5c	9	19	critical	critical	ADJ
bn999595z5c	9	20	process	process	NOUN
bn999595z5c	9	21	step	step	NOUN
bn999595z5c	9	22	—	—	PUNCT
bn999595z5c	9	23	via	via	ADP
bn999595z5c	9	24	-	-	PUNCT
bn999595z5c	9	25	hole	hole	NOUN
bn999595z5c	9	26	fabrication	fabrication	NOUN
bn999595z5c	9	27	—	—	PUNCT
bn999595z5c	9	28	is	be	AUX
bn999595z5c	9	29	demonstrated	demonstrate	VERB
bn999595z5c	9	30	.	.	PUNCT
bn999595z5c	10	1	the	the	DET
bn999595z5c	10	2	developed	develop	VERB
bn999595z5c	10	3	full	full	ADJ
bn999595z5c	10	4	-	-	PUNCT
bn999595z5c	10	5	wafer	wafer	NOUN
bn999595z5c	10	6	via	via	ADP
bn999595z5c	10	7	-	-	PUNCT
bn999595z5c	10	8	hole	hole	NOUN
bn999595z5c	10	9	fabrication	fabrication	NOUN
bn999595z5c	10	10	process	process	NOUN
bn999595z5c	10	11	,	,	PUNCT
bn999595z5c	10	12	which	which	PRON
bn999595z5c	10	13	is	be	AUX
bn999595z5c	10	14	compatible	compatible	ADJ
bn999595z5c	10	15	with	with	ADP
bn999595z5c	10	16	the	the	DET
bn999595z5c	10	17	process	process	NOUN
bn999595z5c	10	18	flow	flow	VERB
bn999595z5c	10	19	for	for	ADP
bn999595z5c	10	20	backside	backside	NOUN
bn999595z5c	10	21	-	-	PUNCT
bn999595z5c	10	22	contact	contact	NOUN
bn999595z5c	10	23	solar	solar	ADJ
bn999595z5c	10	24	cells	cell	NOUN
bn999595z5c	10	25	,	,	PUNCT
bn999595z5c	10	26	resulted	result	VERB
bn999595z5c	10	27	in	in	ADP
bn999595z5c	10	28	uniform	uniform	NOUN
bn999595z5c	10	29	and	and	CCONJ
bn999595z5c	10	30	smooth	smooth	ADJ
bn999595z5c	10	31	etch	etch	NOUN
bn999595z5c	10	32	morphologies	morphology	NOUN
bn999595z5c	10	33	and	and	CCONJ
bn999595z5c	10	34	near	near	ADP
bn999595z5c	10	35	vertical	vertical	ADJ
bn999595z5c	10	36	sidewall	sidewall	NOUN
bn999595z5c	10	37	profiles	profile	NOUN
bn999595z5c	10	38	.	.	PUNCT
bn999595z5c	11	1	for	for	ADP
bn999595z5c	11	2	the	the	DET
bn999595z5c	11	3	study	study	NOUN
bn999595z5c	11	4	of	of	ADP
bn999595z5c	11	5	plasma	plasma	NOUN
bn999595z5c	11	6	-	-	PUNCT
bn999595z5c	11	7	wave	wave	NOUN
bn999595z5c	11	8	effects	effect	NOUN
bn999595z5c	11	9	,	,	PUNCT
bn999595z5c	11	10	in	in	ADP
bn999595z5c	11	11	this	this	DET
bn999595z5c	11	12	work	work	NOUN
bn999595z5c	11	13	we	we	PRON
bn999595z5c	11	14	designed	design	VERB
bn999595z5c	11	15	and	and	CCONJ
bn999595z5c	11	16	fabricated	fabricate	VERB
bn999595z5c	11	17	gan	gan	PROPN
bn999595z5c	11	18	-	-	PUNCT
bn999595z5c	11	19	based	base	VERB
bn999595z5c	11	20	devices	device	NOUN
bn999595z5c	11	21	for	for	ADP
bn999595z5c	11	22	observation	observation	NOUN
bn999595z5c	11	23	of	of	ADP
bn999595z5c	11	24	plasma	plasma	NOUN
bn999595z5c	11	25	-	-	PUNCT
bn999595z5c	11	26	wave	wave	NOUN
bn999595z5c	11	27	effects	effect	NOUN
bn999595z5c	11	28	at	at	ADP
bn999595z5c	11	29	room	room	NOUN
bn999595z5c	11	30	temperature	temperature	NOUN
bn999595z5c	11	31	.	.	PUNCT
bn999595z5c	12	1	while	while	SCONJ
bn999595z5c	12	2	plasma	plasma	NOUN
bn999595z5c	12	3	-	-	PUNCT
bn999595z5c	12	4	wave	wave	NOUN
bn999595z5c	12	5	effects	effect	NOUN
bn999595z5c	12	6	have	have	AUX
bn999595z5c	12	7	been	be	AUX
bn999595z5c	12	8	reported	report	VERB
bn999595z5c	12	9	previously	previously	ADV
bn999595z5c	12	10	at	at	ADP
bn999595z5c	12	11	cryogenic	cryogenic	ADJ
bn999595z5c	12	12	temperatures	temperature	NOUN
bn999595z5c	12	13	,	,	PUNCT
bn999595z5c	12	14	this	this	DET
bn999595z5c	12	15	study	study	NOUN
bn999595z5c	12	16	seeks	seek	VERB
bn999595z5c	12	17	to	to	PART
bn999595z5c	12	18	characterize	characterize	VERB
bn999595z5c	12	19	the	the	DET
bn999595z5c	12	20	potential	potential	NOUN
bn999595z5c	12	21	of	of	ADP
bn999595z5c	12	22	these	these	DET
bn999595z5c	12	23	effects	effect	NOUN
bn999595z5c	12	24	for	for	ADP
bn999595z5c	12	25	room	room	NOUN
bn999595z5c	12	26	temperature	temperature	NOUN
bn999595z5c	12	27	operation	operation	NOUN
bn999595z5c	12	28	.	.	PUNCT
bn999595z5c	13	1	the	the	DET
bn999595z5c	13	2	devices	device	NOUN
bn999595z5c	13	3	explored	explore	VERB
bn999595z5c	13	4	here	here	ADV
bn999595z5c	13	5	use	use	VERB
bn999595z5c	13	6	grating	grating	ADJ
bn999595z5c	13	7	-	-	PUNCT
bn999595z5c	13	8	gate	gate	NOUN
bn999595z5c	13	9	structures	structure	NOUN
bn999595z5c	13	10	to	to	PART
bn999595z5c	13	11	enhance	enhance	VERB
bn999595z5c	13	12	the	the	DET
bn999595z5c	13	13	plasma	plasma	NOUN
bn999595z5c	13	14	-	-	PUNCT
bn999595z5c	13	15	wave	wave	NOUN
bn999595z5c	13	16	signatures	signature	NOUN
bn999595z5c	13	17	in	in	ADP
bn999595z5c	13	18	the	the	DET
bn999595z5c	13	19	device	device	NOUN
bn999595z5c	13	20	response	response	NOUN
bn999595z5c	13	21	.	.	PUNCT
bn999595z5c	14	1	the	the	DET
bn999595z5c	14	2	device	device	NOUN
bn999595z5c	14	3	geometries	geometry	NOUN
bn999595z5c	14	4	were	be	AUX
bn999595z5c	14	5	optimized	optimize	VERB
bn999595z5c	14	6	and	and	CCONJ
bn999595z5c	14	7	nanoscale	nanoscale	ADJ
bn999595z5c	14	8	fabrication	fabrication	NOUN
bn999595z5c	14	9	techniques	technique	NOUN
bn999595z5c	14	10	were	be	AUX
bn999595z5c	14	11	developed	develop	VERB
bn999595z5c	14	12	to	to	PART
bn999595z5c	14	13	fabricate	fabricate	VERB
bn999595z5c	14	14	the	the	DET
bn999595z5c	14	15	devices	device	NOUN
bn999595z5c	14	16	.	.	PUNCT
bn999595z5c	15	1	on	on	ADP
bn999595z5c	15	2	-	-	PUNCT
bn999595z5c	15	3	wafer	wafer	NOUN
bn999595z5c	15	4	electrical	electrical	ADJ
bn999595z5c	15	5	testing	testing	NOUN
bn999595z5c	15	6	showed	show	VERB
bn999595z5c	15	7	clear	clear	ADJ
bn999595z5c	15	8	signatures	signature	NOUN
bn999595z5c	15	9	of	of	ADP
bn999595z5c	15	10	plasma	plasma	NOUN
bn999595z5c	15	11	-	-	PUNCT
bn999595z5c	15	12	wave	wave	NOUN
bn999595z5c	15	13	effects	effect	NOUN
bn999595z5c	15	14	at	at	ADP
bn999595z5c	15	15	room	room	NOUN
bn999595z5c	15	16	temperature	temperature	NOUN
bn999595z5c	15	17	.	.	PUNCT
bn999595z5c	16	1	these	these	DET
bn999595z5c	16	2	signatures	signature	NOUN
bn999595z5c	16	3	were	be	AUX
bn999595z5c	16	4	found	find	VERB
bn999595z5c	16	5	to	to	PART
bn999595z5c	16	6	agree	agree	VERB
bn999595z5c	16	7	very	very	ADV
bn999595z5c	16	8	well	well	ADV
bn999595z5c	16	9	with	with	ADP
bn999595z5c	16	10	analytical	analytical	ADJ
bn999595z5c	16	11	models	model	NOUN
bn999595z5c	16	12	of	of	ADP
bn999595z5c	16	13	plasma	plasma	NOUN
bn999595z5c	16	14	-	-	PUNCT
bn999595z5c	16	15	wave	wave	NOUN
bn999595z5c	16	16	propagation	propagation	NOUN
bn999595z5c	16	17	.	.	PUNCT
bn999595z5c	17	1	the	the	DET
bn999595z5c	17	2	observation	observation	NOUN
bn999595z5c	17	3	of	of	ADP
bn999595z5c	17	4	electrically	electrically	ADV
bn999595z5c	17	5	-	-	PUNCT
bn999595z5c	17	6	significant	significant	ADJ
bn999595z5c	17	7	plasma	plasma	NOUN
bn999595z5c	17	8	-	-	PUNCT
bn999595z5c	17	9	wave	wave	NOUN
bn999595z5c	17	10	effects	effect	NOUN
bn999595z5c	17	11	in	in	ADP
bn999595z5c	17	12	gan	gan	PROPN
bn999595z5c	17	13	opens	open	VERB
bn999595z5c	17	14	the	the	DET
bn999595z5c	17	15	possibility	possibility	NOUN
bn999595z5c	17	16	of	of	ADP
bn999595z5c	17	17	future	future	ADJ
bn999595z5c	17	18	devices	device	NOUN
bn999595z5c	17	19	that	that	PRON
bn999595z5c	17	20	exploit	exploit	VERB
bn999595z5c	17	21	this	this	DET
bn999595z5c	17	22	physics	physics	NOUN
bn999595z5c	17	23	for	for	ADP
bn999595z5c	17	24	enhanced	enhanced	ADJ
bn999595z5c	17	25	functionality	functionality	NOUN
bn999595z5c	17	26	.	.	PUNCT