id	sid	tid	token	lemma	pos
bn999595w4d	1	1	in	in	ADP
bn999595w4d	1	2	this	this	DET
bn999595w4d	1	3	work	work	NOUN
bn999595w4d	1	4	,	,	PUNCT
bn999595w4d	1	5	we	we	PRON
bn999595w4d	1	6	present	present	VERB
bn999595w4d	1	7	the	the	DET
bn999595w4d	1	8	heteroepitaxial	heteroepitaxial	ADJ
bn999595w4d	1	9	and	and	CCONJ
bn999595w4d	1	10	homoepitaxial	homoepitaxial	ADJ
bn999595w4d	1	11	growth	growth	NOUN
bn999595w4d	1	12	and	and	CCONJ
bn999595w4d	1	13	characterization	characterization	NOUN
bn999595w4d	1	14	of	of	ADP
bn999595w4d	1	15	single	single	ADJ
bn999595w4d	1	16	crystal	crystal	NOUN
bn999595w4d	1	17	ga2o3	ga2o3	NOUN
bn999595w4d	1	18	by	by	ADP
bn999595w4d	1	19	plasma	plasma	NOUN
bn999595w4d	1	20	-	-	PUNCT
bn999595w4d	1	21	assisted	assist	VERB
bn999595w4d	1	22	molecular	molecular	ADJ
bn999595w4d	1	23	beam	beam	NOUN
bn999595w4d	1	24	epitaxy	epitaxy	PROPN
bn999595w4d	1	25	(	(	PUNCT
bn999595w4d	1	26	mbe	mbe	PROPN
bn999595w4d	1	27	)	)	PUNCT
bn999595w4d	1	28	.	.	PUNCT
bn999595w4d	2	1	for	for	ADP
bn999595w4d	2	2	growth	growth	NOUN
bn999595w4d	2	3	,	,	PUNCT
bn999595w4d	2	4	flux	flux	NOUN
bn999595w4d	2	5	-	-	PUNCT
bn999595w4d	2	6	temperature	temperature	NOUN
bn999595w4d	2	7	measurements	measurement	NOUN
bn999595w4d	2	8	were	be	AUX
bn999595w4d	2	9	done	do	VERB
bn999595w4d	2	10	on	on	ADP
bn999595w4d	2	11	ga	ga	PROPN
bn999595w4d	2	12	,	,	PUNCT
bn999595w4d	2	13	in	in	ADP
bn999595w4d	2	14	,	,	PUNCT
bn999595w4d	2	15	and	and	CCONJ
bn999595w4d	2	16	sn	sn	PROPN
bn999595w4d	2	17	cells	cell	NOUN
bn999595w4d	2	18	to	to	PART
bn999595w4d	2	19	find	find	VERB
bn999595w4d	2	20	the	the	DET
bn999595w4d	2	21	appropriate	appropriate	ADJ
bn999595w4d	2	22	temperature	temperature	NOUN
bn999595w4d	2	23	for	for	ADP
bn999595w4d	2	24	a	a	DET
bn999595w4d	2	25	specific	specific	ADJ
bn999595w4d	2	26	beam	beam	NOUN
bn999595w4d	2	27	equivalent	equivalent	ADJ
bn999595w4d	2	28	pressure	pressure	NOUN
bn999595w4d	2	29	(	(	PUNCT
bn999595w4d	2	30	bep	bep	PROPN
bn999595w4d	2	31	)	)	PUNCT
bn999595w4d	2	32	.	.	PUNCT
bn999595w4d	3	1	in	in	ADP
bn999595w4d	3	2	the	the	DET
bn999595w4d	3	3	first	first	ADJ
bn999595w4d	3	4	set	set	NOUN
bn999595w4d	3	5	of	of	ADP
bn999595w4d	3	6	experiments	experiment	NOUN
bn999595w4d	3	7	,	,	PUNCT
bn999595w4d	3	8	(	(	PUNCT
bn999595w4d	3	9	201	201	NUM
bn999595w4d	3	10	)	)	PUNCT
bn999595w4d	3	11	and	and	CCONJ
bn999595w4d	3	12	(	(	PUNCT
bn999595w4d	3	13	100	100	NUM
bn999595w4d	3	14	)	)	PUNCT
bn999595w4d	3	15	ga2o3	ga2o3	NOUN
bn999595w4d	3	16	thin	thin	ADJ
bn999595w4d	3	17	films	film	NOUN
bn999595w4d	3	18	were	be	AUX
bn999595w4d	3	19	grown	grow	VERB
bn999595w4d	3	20	on	on	ADP
bn999595w4d	3	21	c	c	NOUN
bn999595w4d	3	22	-	-	PUNCT
bn999595w4d	3	23	plane	plane	NOUN
bn999595w4d	3	24	(	(	PUNCT
bn999595w4d	3	25	001	001	NUM
bn999595w4d	3	26	)	)	PUNCT
bn999595w4d	3	27	sapphire	sapphire	NOUN
bn999595w4d	3	28	and	and	CCONJ
bn999595w4d	3	29	(	(	PUNCT
bn999595w4d	3	30	100	100	NUM
bn999595w4d	3	31	)	)	PUNCT
bn999595w4d	3	32	􀀀ga2o3	􀀀ga2o3	PROPN
bn999595w4d	3	33	substrates	substrate	NOUN
bn999595w4d	3	34	,	,	PUNCT
bn999595w4d	3	35	respectively	respectively	ADV
bn999595w4d	3	36	.	.	PUNCT
bn999595w4d	4	1	samples	sample	NOUN
bn999595w4d	4	2	were	be	AUX
bn999595w4d	4	3	grown	grow	VERB
bn999595w4d	4	4	at	at	ADP
bn999595w4d	4	5	a	a	DET
bn999595w4d	4	6	constant	constant	ADJ
bn999595w4d	4	7	oxygen	oxygen	NOUN
bn999595w4d	4	8	flux	flux	NOUN
bn999595w4d	4	9	of	of	ADP
bn999595w4d	4	10	1.5e-􀀀5	1.5e-􀀀5	NUM
bn999595w4d	4	11	(	(	PUNCT
bn999595w4d	4	12	torr	torr	NOUN
bn999595w4d	4	13	)	)	PUNCT
bn999595w4d	4	14	and	and	CCONJ
bn999595w4d	4	15	substrate	substrate	NOUN
bn999595w4d	4	16	temperature	temperature	NOUN
bn999595w4d	4	17	of	of	ADP
bn999595w4d	4	18	700c	700c	PROPN
bn999595w4d	4	19	.	.	PUNCT
bn999595w4d	5	1	four	four	NUM
bn999595w4d	5	2	different	different	ADJ
bn999595w4d	5	3	gallium	gallium	NOUN
bn999595w4d	5	4	fluxes	flux	NOUN
bn999595w4d	5	5	(	(	PUNCT
bn999595w4d	5	6	2e-􀀀8	2e-􀀀8	NUM
bn999595w4d	5	7	,	,	PUNCT
bn999595w4d	5	8	5e-8	5e-8	PROPN
bn999595w4d	5	9	,	,	PUNCT
bn999595w4d	5	10	8e-8	8e-8	PROPN
bn999595w4d	5	11	,	,	PUNCT
bn999595w4d	5	12	and1.1e-7	and1.1e-7	ADJ
bn999595w4d	5	13	(	(	PUNCT
bn999595w4d	5	14	torr	torr	NOUN
bn999595w4d	5	15	)	)	PUNCT
bn999595w4d	5	16	)	)	PUNCT
bn999595w4d	5	17	were	be	AUX
bn999595w4d	5	18	investigated	investigate	VERB
bn999595w4d	5	19	.	.	PUNCT
bn999595w4d	6	1	optical	optical	ADJ
bn999595w4d	6	2	spectroscopy	spectroscopy	NOUN
bn999595w4d	6	3	,	,	PUNCT
bn999595w4d	6	4	atomic	atomic	ADJ
bn999595w4d	6	5	force	force	NOUN
bn999595w4d	6	6	microscopy	microscopy	NOUN
bn999595w4d	6	7	(	(	PUNCT
bn999595w4d	6	8	afm	afm	X
bn999595w4d	6	9	)	)	PUNCT
bn999595w4d	6	10	,	,	PUNCT
bn999595w4d	6	11	scanning	scan	VERB
bn999595w4d	6	12	(	(	PUNCT
bn999595w4d	6	13	sem	sem	PROPN
bn999595w4d	6	14	)	)	PUNCT
bn999595w4d	6	15	;	;	PUNCT
bn999595w4d	6	16	transmission	transmission	NOUN
bn999595w4d	6	17	electron	electron	NOUN
bn999595w4d	6	18	microscopy	microscopy	NOUN
bn999595w4d	6	19	(	(	PUNCT
bn999595w4d	6	20	tem	tem	PROPN
bn999595w4d	6	21	)	)	PUNCT
bn999595w4d	6	22	,	,	PUNCT
bn999595w4d	6	23	and	and	CCONJ
bn999595w4d	6	24	xray	xray	PROPN
bn999595w4d	6	25	diffraction	diffraction	NOUN
bn999595w4d	6	26	(	(	PUNCT
bn999595w4d	6	27	xrd	xrd	PROPN
bn999595w4d	6	28	)	)	PUNCT
bn999595w4d	6	29	were	be	AUX
bn999595w4d	6	30	done	do	VERB
bn999595w4d	6	31	on	on	ADP
bn999595w4d	6	32	samples	sample	NOUN
bn999595w4d	6	33	.	.	PUNCT
bn999595w4d	7	1	the	the	DET
bn999595w4d	7	2	characterizations	characterization	NOUN
bn999595w4d	7	3	showed	show	VERB
bn999595w4d	7	4	lower	low	ADJ
bn999595w4d	7	5	growth	growth	NOUN
bn999595w4d	7	6	rate	rate	NOUN
bn999595w4d	7	7	at	at	ADP
bn999595w4d	7	8	higher	high	ADJ
bn999595w4d	7	9	gallium	gallium	NOUN
bn999595w4d	7	10	fluxes	flux	NOUN
bn999595w4d	7	11	and	and	CCONJ
bn999595w4d	7	12	smoother	smooth	ADJ
bn999595w4d	7	13	surfaces	surface	NOUN
bn999595w4d	7	14	at	at	ADP
bn999595w4d	7	15	lower	low	ADJ
bn999595w4d	7	16	gallium	gallium	NOUN
bn999595w4d	7	17	fluxes	flux	NOUN
bn999595w4d	7	18	for	for	ADP
bn999595w4d	7	19	both	both	DET
bn999595w4d	7	20	heteroepitaxy	heteroepitaxy	NOUN
bn999595w4d	7	21	and	and	CCONJ
bn999595w4d	7	22	homoepitaxy	homoepitaxy	PROPN
bn999595w4d	7	23	.	.	PUNCT
bn999595w4d	8	1	in	in	ADP
bn999595w4d	8	2	the	the	DET
bn999595w4d	8	3	next	next	ADJ
bn999595w4d	8	4	step	step	NOUN
bn999595w4d	8	5	,	,	PUNCT
bn999595w4d	8	6	different	different	ADJ
bn999595w4d	8	7	dopants	dopant	NOUN
bn999595w4d	8	8	(	(	PUNCT
bn999595w4d	8	9	si	si	X
bn999595w4d	8	10	,	,	PUNCT
bn999595w4d	8	11	in	in	ADP
bn999595w4d	8	12	,	,	PUNCT
bn999595w4d	8	13	and	and	CCONJ
bn999595w4d	8	14	sn	sn	PROPN
bn999595w4d	8	15	)	)	PUNCT
bn999595w4d	8	16	were	be	AUX
bn999595w4d	8	17	studied	study	VERB
bn999595w4d	8	18	for	for	ADP
bn999595w4d	8	19	doping	dope	VERB
bn999595w4d	8	20	.	.	PUNCT
bn999595w4d	9	1	data	datum	NOUN
bn999595w4d	9	2	analysis	analysis	NOUN
bn999595w4d	9	3	showed	show	VERB
bn999595w4d	9	4	successful	successful	ADJ
bn999595w4d	9	5	incorporation	incorporation	NOUN
bn999595w4d	9	6	of	of	ADP
bn999595w4d	9	7	si	si	X
bn999595w4d	9	8	atoms	atom	NOUN
bn999595w4d	9	9	in	in	ADP
bn999595w4d	9	10	ga2o3	ga2o3	NOUN
bn999595w4d	9	11	crystal	crystal	NOUN
bn999595w4d	9	12	structure	structure	NOUN
bn999595w4d	9	13	.	.	PUNCT
bn999595w4d	10	1	however	however	ADV
bn999595w4d	10	2	,	,	PUNCT
bn999595w4d	10	3	further	further	ADJ
bn999595w4d	10	4	investigations	investigation	NOUN
bn999595w4d	10	5	revealed	reveal	VERB
bn999595w4d	10	6	that	that	SCONJ
bn999595w4d	10	7	si	si	PROPN
bn999595w4d	10	8	atoms	atom	NOUN
bn999595w4d	10	9	did	do	AUX
bn999595w4d	10	10	not	not	PART
bn999595w4d	10	11	act	act	VERB
bn999595w4d	10	12	as	as	ADP
bn999595w4d	10	13	dopants	dopant	NOUN
bn999595w4d	10	14	.	.	PUNCT
bn999595w4d	11	1	on	on	ADP
bn999595w4d	11	2	the	the	DET
bn999595w4d	11	3	other	other	ADJ
bn999595w4d	11	4	hand	hand	NOUN
bn999595w4d	11	5	,	,	PUNCT
bn999595w4d	11	6	ga2o3	ga2o3	NOUN
bn999595w4d	11	7	could	could	AUX
bn999595w4d	11	8	be	be	AUX
bn999595w4d	11	9	doped	dope	VERB
bn999595w4d	11	10	n	n	NOUN
bn999595w4d	11	11	-	-	PUNCT
bn999595w4d	11	12	type	type	NOUN
bn999595w4d	11	13	with	with	ADP
bn999595w4d	11	14	sn	sn	PROPN
bn999595w4d	11	15	.	.	PUNCT
bn999595w4d	12	1	also	also	ADV
bn999595w4d	12	2	,	,	PUNCT
bn999595w4d	12	3	ga2o3	ga2o3	NOUN
bn999595w4d	12	4	thin	thin	ADJ
bn999595w4d	12	5	films	film	NOUN
bn999595w4d	12	6	could	could	AUX
bn999595w4d	12	7	be	be	AUX
bn999595w4d	12	8	successfully	successfully	ADV
bn999595w4d	12	9	delta	delta	ADV
bn999595w4d	12	10	-	-	PUNCT
bn999595w4d	12	11	doped	dope	VERB
bn999595w4d	12	12	by	by	ADP
bn999595w4d	12	13	sn	sn	PROPN
bn999595w4d	12	14	.	.	PROPN
bn999595w4d	13	1	while	while	SCONJ
bn999595w4d	13	2	gasno	gasno	PROPN
bn999595w4d	13	3	/	/	SYM
bn999595w4d	13	4	ga2o3	ga2o3	NOUN
bn999595w4d	13	5	heterostructures	heterostructure	NOUN
bn999595w4d	13	6	could	could	AUX
bn999595w4d	13	7	be	be	AUX
bn999595w4d	13	8	successfully	successfully	ADV
bn999595w4d	13	9	grown	grow	VERB
bn999595w4d	13	10	on	on	ADP
bn999595w4d	13	11	(	(	PUNCT
bn999595w4d	13	12	001	001	NUM
bn999595w4d	13	13	)	)	PUNCT
bn999595w4d	13	14	sapphire	sapphire	NOUN
bn999595w4d	13	15	substrate	substrate	NOUN
bn999595w4d	13	16	by	by	ADP
bn999595w4d	13	17	alloying	alloy	VERB
bn999595w4d	13	18	of	of	ADP
bn999595w4d	13	19	sn	sn	PROPN
bn999595w4d	13	20	into	into	ADP
bn999595w4d	13	21	ga2o3	ga2o3	NOUN
bn999595w4d	13	22	crystal	crystal	NOUN
bn999595w4d	13	23	structure	structure	NOUN
bn999595w4d	13	24	,	,	PUNCT
bn999595w4d	13	25	ingao	ingao	ADJ
bn999595w4d	13	26	/	/	SYM
bn999595w4d	13	27	ga2o3	ga2o3	NOUN
bn999595w4d	13	28	could	could	AUX
bn999595w4d	13	29	not	not	PART
bn999595w4d	13	30	be	be	AUX
bn999595w4d	13	31	achieved	achieve	VERB
bn999595w4d	13	32	due	due	ADJ
bn999595w4d	13	33	to	to	ADP
bn999595w4d	13	34	non	non	ADJ
bn999595w4d	13	35	-	-	ADJ
bn999595w4d	13	36	uniform	uniform	ADJ
bn999595w4d	13	37	distribution	distribution	NOUN
bn999595w4d	13	38	of	of	ADP
bn999595w4d	13	39	in	in	ADP
bn999595w4d	13	40	inside	inside	ADP
bn999595w4d	13	41	the	the	DET
bn999595w4d	13	42	ga2o3	ga2o3	NOUN
bn999595w4d	13	43	crystal	crystal	NOUN
bn999595w4d	13	44	.	.	PUNCT