id	sid	tid	token	lemma	pos
b2773t9684b	1	1	the	the	DET
b2773t9684b	1	2	study	study	NOUN
b2773t9684b	1	3	of	of	ADP
b2773t9684b	1	4	ferromagnetic	ferromagnetic	ADJ
b2773t9684b	1	5	semiconductors	semiconductor	NOUN
b2773t9684b	1	6	(	(	PUNCT
b2773t9684b	1	7	fms	fms	PROPN
b2773t9684b	1	8	)	)	PUNCT
b2773t9684b	1	9	continues	continue	VERB
b2773t9684b	1	10	to	to	PART
b2773t9684b	1	11	be	be	AUX
b2773t9684b	1	12	of	of	ADP
b2773t9684b	1	13	great	great	ADJ
b2773t9684b	1	14	interest	interest	NOUN
b2773t9684b	1	15	because	because	SCONJ
b2773t9684b	1	16	of	of	ADP
b2773t9684b	1	17	their	their	PRON
b2773t9684b	1	18	potential	potential	NOUN
b2773t9684b	1	19	for	for	ADP
b2773t9684b	1	20	spintronic	spintronic	ADJ
b2773t9684b	1	21	devices	device	NOUN
b2773t9684b	1	22	.	.	PUNCT
b2773t9684b	2	1	while	while	SCONJ
b2773t9684b	2	2	there	there	PRON
b2773t9684b	2	3	has	have	AUX
b2773t9684b	2	4	been	be	AUX
b2773t9684b	2	5	much	much	ADJ
b2773t9684b	2	6	progress	progress	NOUN
b2773t9684b	2	7	in	in	ADP
b2773t9684b	2	8	our	our	PRON
b2773t9684b	2	9	understanding	understanding	NOUN
b2773t9684b	2	10	of	of	ADP
b2773t9684b	2	11	fms	fms	PROPN
b2773t9684b	2	12	materials	material	NOUN
b2773t9684b	2	13	&	&	CCONJ
b2773t9684b	2	14	ndash	ndash	PROPN
b2773t9684b	2	15	;	;	PUNCT
b2773t9684b	2	16	particularly	particularly	ADV
b2773t9684b	2	17	of	of	ADP
b2773t9684b	2	18	the	the	DET
b2773t9684b	2	19	canonical	canonical	ADJ
b2773t9684b	2	20	iii	iii	NUM
b2773t9684b	2	21	-	-	PUNCT
b2773t9684b	2	22	v	v	NOUN
b2773t9684b	2	23	system	system	NOUN
b2773t9684b	2	24	gamnas	gamnas	PROPN
b2773t9684b	2	25	&	&	CCONJ
b2773t9684b	2	26	ndash	ndash	PROPN
b2773t9684b	2	27	;	;	PUNCT
b2773t9684b	2	28	many	many	ADJ
b2773t9684b	2	29	issues	issue	NOUN
b2773t9684b	2	30	still	still	ADV
b2773t9684b	2	31	remain	remain	VERB
b2773t9684b	2	32	unresolved	unresolved	ADJ
b2773t9684b	2	33	.	.	PUNCT
b2773t9684b	3	1	one	one	NUM
b2773t9684b	3	2	of	of	ADP
b2773t9684b	3	3	these	these	PRON
b2773t9684b	3	4	is	be	AUX
b2773t9684b	3	5	the	the	DET
b2773t9684b	3	6	nature	nature	NOUN
b2773t9684b	3	7	of	of	ADP
b2773t9684b	3	8	interlayer	interlayer	NOUN
b2773t9684b	3	9	exchange	exchange	NOUN
b2773t9684b	3	10	coupling	coupling	NOUN
b2773t9684b	3	11	(	(	PUNCT
b2773t9684b	3	12	iec	iec	ADV
b2773t9684b	3	13	)	)	PUNCT
b2773t9684b	3	14	in	in	ADP
b2773t9684b	3	15	gamnas	gamnas	PROPN
b2773t9684b	3	16	-	-	PUNCT
b2773t9684b	3	17	based	base	VERB
b2773t9684b	3	18	multilayers	multilayer	NOUN
b2773t9684b	3	19	,	,	PUNCT
b2773t9684b	3	20	an	an	DET
b2773t9684b	3	21	issue	issue	NOUN
b2773t9684b	3	22	that	that	PRON
b2773t9684b	3	23	is	be	AUX
b2773t9684b	3	24	important	important	ADJ
b2773t9684b	3	25	from	from	ADP
b2773t9684b	3	26	the	the	DET
b2773t9684b	3	27	point	point	NOUN
b2773t9684b	3	28	of	of	ADP
b2773t9684b	3	29	view	view	NOUN
b2773t9684b	3	30	of	of	ADP
b2773t9684b	3	31	possible	possible	ADJ
b2773t9684b	3	32	spintronic	spintronic	ADJ
b2773t9684b	3	33	applications	application	NOUN
b2773t9684b	3	34	.	.	PUNCT
b2773t9684b	4	1	in	in	ADP
b2773t9684b	4	2	this	this	DET
b2773t9684b	4	3	connection	connection	NOUN
b2773t9684b	4	4	,	,	PUNCT
b2773t9684b	4	5	it	it	PRON
b2773t9684b	4	6	is	be	AUX
b2773t9684b	4	7	important	important	ADJ
b2773t9684b	4	8	to	to	PART
b2773t9684b	4	9	establish	establish	VERB
b2773t9684b	4	10	under	under	ADP
b2773t9684b	4	11	what	what	DET
b2773t9684b	4	12	conditions	condition	NOUN
b2773t9684b	4	13	the	the	DET
b2773t9684b	4	14	iec	iec	NOUN
b2773t9684b	4	15	between	between	ADP
b2773t9684b	4	16	successive	successive	ADJ
b2773t9684b	4	17	gamnas	gamna	NOUN
b2773t9684b	4	18	layers	layer	NOUN
b2773t9684b	4	19	is	be	AUX
b2773t9684b	4	20	antiferromagnetic	antiferromagnetic	ADJ
b2773t9684b	4	21	(	(	PUNCT
b2773t9684b	4	22	afm	afm	X
b2773t9684b	4	23	)	)	PUNCT
b2773t9684b	4	24	or	or	CCONJ
b2773t9684b	4	25	ferromagnetic	ferromagnetic	ADJ
b2773t9684b	4	26	(	(	PUNCT
b2773t9684b	4	27	fm	fm	PROPN
b2773t9684b	4	28	)	)	PUNCT
b2773t9684b	4	29	,	,	PUNCT
b2773t9684b	4	30	since	since	SCONJ
b2773t9684b	4	31	manipulation	manipulation	NOUN
b2773t9684b	4	32	of	of	ADP
b2773t9684b	4	33	such	such	ADJ
b2773t9684b	4	34	iec	iec	NOUN
b2773t9684b	4	35	can	can	AUX
b2773t9684b	4	36	then	then	ADV
b2773t9684b	4	37	be	be	AUX
b2773t9684b	4	38	directly	directly	ADV
b2773t9684b	4	39	applied	apply	VERB
b2773t9684b	4	40	to	to	PART
b2773t9684b	4	41	achieve	achieve	VERB
b2773t9684b	4	42	giant	giant	ADJ
b2773t9684b	4	43	magnetoresistance	magnetoresistance	NOUN
b2773t9684b	4	44	(	(	PUNCT
b2773t9684b	4	45	gmr	gmr	PROPN
b2773t9684b	4	46	)	)	PUNCT
b2773t9684b	4	47	and	and	CCONJ
b2773t9684b	4	48	other	other	ADJ
b2773t9684b	4	49	devices	device	NOUN
b2773t9684b	4	50	based	base	VERB
b2773t9684b	4	51	on	on	ADP
b2773t9684b	4	52	this	this	DET
b2773t9684b	4	53	material	material	NOUN
b2773t9684b	4	54	.	.	PUNCT
b2773t9684b	5	1	in	in	ADP
b2773t9684b	5	2	this	this	DET
b2773t9684b	5	3	thesis	thesis	NOUN
b2773t9684b	5	4	i	i	PRON
b2773t9684b	5	5	describe	describe	VERB
b2773t9684b	5	6	magneto	magneto	PROPN
b2773t9684b	5	7	-	-	PUNCT
b2773t9684b	5	8	transport	transport	NOUN
b2773t9684b	5	9	,	,	PUNCT
b2773t9684b	5	10	magnetization	magnetization	NOUN
b2773t9684b	5	11	,	,	PUNCT
b2773t9684b	5	12	and	and	CCONJ
b2773t9684b	5	13	neutron	neutron	NOUN
b2773t9684b	5	14	reflectometry	reflectometry	NOUN
b2773t9684b	5	15	experiments	experiment	NOUN
b2773t9684b	5	16	applied	apply	VERB
b2773t9684b	5	17	to	to	ADP
b2773t9684b	5	18	gamnas	gamnas	PROPN
b2773t9684b	5	19	-	-	PUNCT
b2773t9684b	5	20	based	base	VERB
b2773t9684b	5	21	tri	tri	ADJ
b2773t9684b	5	22	-	-	ADJ
b2773t9684b	5	23	layer	layer	ADJ
b2773t9684b	5	24	structures	structure	NOUN
b2773t9684b	5	25	,	,	PUNCT
b2773t9684b	5	26	consisting	consist	VERB
b2773t9684b	5	27	of	of	ADP
b2773t9684b	5	28	gamnas	gamna	NOUN
b2773t9684b	5	29	layers	layer	NOUN
b2773t9684b	5	30	separated	separate	VERB
b2773t9684b	5	31	by	by	ADP
b2773t9684b	5	32	non	non	ADJ
b2773t9684b	5	33	-	-	ADJ
b2773t9684b	5	34	magnetic	magnetic	ADJ
b2773t9684b	5	35	gaas	gaas	NOUN
b2773t9684b	5	36	spacers	spacer	NOUN
b2773t9684b	5	37	.	.	PUNCT
b2773t9684b	6	1	these	these	DET
b2773t9684b	6	2	measurements	measurement	NOUN
b2773t9684b	6	3	serve	serve	VERB
b2773t9684b	6	4	to	to	PART
b2773t9684b	6	5	identify	identify	VERB
b2773t9684b	6	6	conditions	condition	NOUN
b2773t9684b	6	7	under	under	ADP
b2773t9684b	6	8	which	which	PRON
b2773t9684b	6	9	afm	afm	NOUN
b2773t9684b	6	10	coupling	coupling	NOUN
b2773t9684b	6	11	will	will	AUX
b2773t9684b	6	12	occur	occur	VERB
b2773t9684b	6	13	in	in	ADP
b2773t9684b	6	14	such	such	ADJ
b2773t9684b	6	15	gamnas	gamna	NOUN
b2773t9684b	6	16	/	/	SYM
b2773t9684b	6	17	gaas	gaas	PROPN
b2773t9684b	6	18	multilayer	multilayer	PROPN
b2773t9684b	6	19	systems	system	NOUN
b2773t9684b	6	20	,	,	PUNCT
b2773t9684b	6	21	thus	thus	ADV
b2773t9684b	6	22	providing	provide	VERB
b2773t9684b	6	23	us	we	PRON
b2773t9684b	6	24	the	the	DET
b2773t9684b	6	25	information	information	NOUN
b2773t9684b	6	26	which	which	PRON
b2773t9684b	6	27	can	can	AUX
b2773t9684b	6	28	be	be	AUX
b2773t9684b	6	29	used	use	VERB
b2773t9684b	6	30	for	for	ADP
b2773t9684b	6	31	manipulating	manipulate	VERB
b2773t9684b	6	32	magnetization	magnetization	NOUN
b2773t9684b	6	33	(	(	PUNCT
b2773t9684b	6	34	and	and	CCONJ
b2773t9684b	6	35	thus	thus	ADV
b2773t9684b	6	36	gmr	gmr	PROPN
b2773t9684b	6	37	)	)	PUNCT
b2773t9684b	6	38	in	in	ADP
b2773t9684b	6	39	structures	structure	NOUN
b2773t9684b	6	40	based	base	VERB
b2773t9684b	6	41	on	on	ADP
b2773t9684b	6	42	the	the	DET
b2773t9684b	6	43	ferromagnetic	ferromagnetic	ADJ
b2773t9684b	6	44	semiconductor	semiconductor	NOUN
b2773t9684b	6	45	gamnas	gamna	NOUN
b2773t9684b	6	46	.	.	PUNCT
b2773t9684b	7	1	in	in	ADP
b2773t9684b	7	2	addition	addition	NOUN
b2773t9684b	7	3	,	,	PUNCT
b2773t9684b	7	4	i	i	PRON
b2773t9684b	7	5	describe	describe	VERB
b2773t9684b	7	6	results	result	NOUN
b2773t9684b	7	7	regarding	regard	VERB
b2773t9684b	7	8	vertically	vertically	ADV
b2773t9684b	7	9	graded	grade	VERB
b2773t9684b	7	10	magnetic	magnetic	ADJ
b2773t9684b	7	11	anisotropy	anisotropy	NOUN
b2773t9684b	7	12	in	in	ADP
b2773t9684b	7	13	gamnas	gamnas	PROPN
b2773t9684b	7	14	.	.	PUNCT
b2773t9684b	8	1	controlled	control	VERB
b2773t9684b	8	2	vertical	vertical	ADJ
b2773t9684b	8	3	grading	grading	NOUN
b2773t9684b	8	4	of	of	ADP
b2773t9684b	8	5	magnetization	magnetization	NOUN
b2773t9684b	8	6	of	of	ADP
b2773t9684b	8	7	the	the	DET
b2773t9684b	8	8	ferromagnetic	ferromagnetic	ADJ
b2773t9684b	8	9	semiconductor	semiconductor	NOUN
b2773t9684b	8	10	gamnas	gamna	NOUN
b2773t9684b	8	11	represents	represent	VERB
b2773t9684b	8	12	a	a	DET
b2773t9684b	8	13	significant	significant	ADJ
b2773t9684b	8	14	step	step	NOUN
b2773t9684b	8	15	toward	toward	ADP
b2773t9684b	8	16	optimizing	optimize	VERB
b2773t9684b	8	17	its	its	PRON
b2773t9684b	8	18	magnetic	magnetic	ADJ
b2773t9684b	8	19	properties	property	NOUN
b2773t9684b	8	20	for	for	ADP
b2773t9684b	8	21	device	device	NOUN
b2773t9684b	8	22	applications	application	NOUN
b2773t9684b	8	23	.	.	PUNCT
b2773t9684b	9	1	we	we	PRON
b2773t9684b	9	2	show	show	VERB
b2773t9684b	9	3	that	that	SCONJ
b2773t9684b	9	4	vertical	vertical	ADJ
b2773t9684b	9	5	magnetization	magnetization	NOUN
b2773t9684b	9	6	gradients	gradient	NOUN
b2773t9684b	9	7	in	in	ADP
b2773t9684b	9	8	gamnas	gamna	NOUN
b2773t9684b	9	9	layers	layer	NOUN
b2773t9684b	9	10	can	can	AUX
b2773t9684b	9	11	readily	readily	ADV
b2773t9684b	9	12	be	be	AUX
b2773t9684b	9	13	achieved	achieve	VERB
b2773t9684b	9	14	by	by	ADP
b2773t9684b	9	15	appropriate	appropriate	ADJ
b2773t9684b	9	16	growth	growth	NOUN
b2773t9684b	9	17	strategies	strategy	NOUN
b2773t9684b	9	18	,	,	PUNCT
b2773t9684b	9	19	although	although	SCONJ
b2773t9684b	9	20	quantitative	quantitative	ADJ
b2773t9684b	9	21	control	control	NOUN
b2773t9684b	9	22	of	of	ADP
b2773t9684b	9	23	such	such	ADJ
b2773t9684b	9	24	grading	grading	NOUN
b2773t9684b	9	25	is	be	AUX
b2773t9684b	9	26	difficult	difficult	ADJ
b2773t9684b	9	27	in	in	ADP
b2773t9684b	9	28	the	the	DET
b2773t9684b	9	29	growth	growth	NOUN
b2773t9684b	9	30	of	of	ADP
b2773t9684b	9	31	such	such	ADJ
b2773t9684b	9	32	layers	layer	NOUN
b2773t9684b	9	33	due	due	ADP
b2773t9684b	9	34	to	to	ADP
b2773t9684b	9	35	various	various	ADJ
b2773t9684b	9	36	competing	compete	VERB
b2773t9684b	9	37	effects	effect	NOUN
b2773t9684b	9	38	,	,	PUNCT
b2773t9684b	9	39	such	such	ADJ
b2773t9684b	9	40	as	as	ADP
b2773t9684b	9	41	mn	mn	PROPN
b2773t9684b	9	42	diffusion	diffusion	NOUN
b2773t9684b	9	43	,	,	PUNCT
b2773t9684b	9	44	self	self	NOUN
b2773t9684b	9	45	-	-	PUNCT
b2773t9684b	9	46	annealing	annealing	NOUN
b2773t9684b	9	47	,	,	PUNCT
b2773t9684b	9	48	and	and	CCONJ
b2773t9684b	9	49	diffusion	diffusion	NOUN
b2773t9684b	9	50	of	of	ADP
b2773t9684b	9	51	charge	charge	NOUN
b2773t9684b	9	52	carriers	carrier	NOUN
b2773t9684b	9	53	.	.	PUNCT
b2773t9684b	10	1	furthermore	furthermore	ADV
b2773t9684b	10	2	,	,	PUNCT
b2773t9684b	10	3	there	there	PRON
b2773t9684b	10	4	also	also	ADV
b2773t9684b	10	5	are	be	AUX
b2773t9684b	10	6	several	several	ADJ
b2773t9684b	10	7	surface	surface	NOUN
b2773t9684b	10	8	effects	effect	NOUN
b2773t9684b	10	9	that	that	PRON
b2773t9684b	10	10	can	can	AUX
b2773t9684b	10	11	influence	influence	VERB
b2773t9684b	10	12	the	the	DET
b2773t9684b	10	13	magnetization	magnetization	NOUN
b2773t9684b	10	14	profile	profile	NOUN
b2773t9684b	10	15	,	,	PUNCT
b2773t9684b	10	16	which	which	PRON
b2773t9684b	10	17	should	should	AUX
b2773t9684b	10	18	be	be	AUX
b2773t9684b	10	19	considered	consider	VERB
b2773t9684b	10	20	in	in	ADP
b2773t9684b	10	21	designing	design	VERB
b2773t9684b	10	22	and	and	CCONJ
b2773t9684b	10	23	fabricating	fabricate	VERB
b2773t9684b	10	24	graded	grade	VERB
b2773t9684b	10	25	gamnas	gamna	NOUN
b2773t9684b	10	26	specimens	specimen	NOUN
b2773t9684b	10	27	.	.	PUNCT
b2773t9684b	11	1	polarized	polarize	VERB
b2773t9684b	11	2	neutron	neutron	NOUN
b2773t9684b	11	3	reflectometry	reflectometry	NOUN
b2773t9684b	11	4	provides	provide	VERB
b2773t9684b	11	5	direct	direct	ADJ
b2773t9684b	11	6	evidence	evidence	NOUN
b2773t9684b	11	7	that	that	SCONJ
b2773t9684b	11	8	vertical	vertical	ADJ
b2773t9684b	11	9	grading	grading	NOUN
b2773t9684b	11	10	of	of	ADP
b2773t9684b	11	11	mn	mn	PROPN
b2773t9684b	11	12	concentration	concentration	NOUN
b2773t9684b	11	13	has	have	AUX
b2773t9684b	11	14	been	be	AUX
b2773t9684b	11	15	successfully	successfully	ADV
b2773t9684b	11	16	achieved	achieve	VERB
b2773t9684b	11	17	in	in	ADP
b2773t9684b	11	18	our	our	PRON
b2773t9684b	11	19	gamnas	gamna	NOUN
b2773t9684b	11	20	samples	sample	NOUN
b2773t9684b	11	21	,	,	PUNCT
b2773t9684b	11	22	and	and	CCONJ
b2773t9684b	11	23	that	that	SCONJ
b2773t9684b	11	24	the	the	DET
b2773t9684b	11	25	samples	sample	NOUN
b2773t9684b	11	26	exhibit	exhibit	VERB
b2773t9684b	11	27	magnetic	magnetic	ADJ
b2773t9684b	11	28	'	'	PUNCT
b2773t9684b	11	29	hardening	hardening	NOUN
b2773t9684b	11	30	'	'	PUNCT
b2773t9684b	11	31	near	near	ADP
b2773t9684b	11	32	the	the	DET
b2773t9684b	11	33	surface	surface	NOUN
b2773t9684b	11	34	.	.	PUNCT
b2773t9684b	12	1	finally	finally	ADV
b2773t9684b	12	2	,	,	PUNCT
b2773t9684b	12	3	i	i	PRON
b2773t9684b	12	4	describe	describe	VERB
b2773t9684b	12	5	results	result	NOUN
b2773t9684b	12	6	from	from	ADP
b2773t9684b	12	7	efforts	effort	NOUN
b2773t9684b	12	8	to	to	PART
b2773t9684b	12	9	carefully	carefully	ADV
b2773t9684b	12	10	engineer	engineer	VERB
b2773t9684b	12	11	the	the	DET
b2773t9684b	12	12	hole	hole	NOUN
b2773t9684b	12	13	concentration	concentration	NOUN
b2773t9684b	12	14	in	in	ADP
b2773t9684b	12	15	gamnas	gamna	NOUN
b2773t9684b	12	16	both	both	CCONJ
b2773t9684b	12	17	after	after	ADP
b2773t9684b	12	18	and	and	CCONJ
b2773t9684b	12	19	during	during	ADP
b2773t9684b	12	20	growth	growth	NOUN
b2773t9684b	12	21	.	.	PUNCT
b2773t9684b	13	1	when	when	SCONJ
b2773t9684b	13	2	ge	ge	PROPN
b2773t9684b	13	3	is	be	AUX
b2773t9684b	13	4	grown	grow	VERB
b2773t9684b	13	5	on	on	ADP
b2773t9684b	13	6	gamnas	gamna	NOUN
b2773t9684b	13	7	,	,	PUNCT
b2773t9684b	13	8	the	the	DET
b2773t9684b	13	9	incorporation	incorporation	NOUN
b2773t9684b	13	10	of	of	ADP
b2773t9684b	13	11	mn	mn	PROPN
b2773t9684b	13	12	has	have	AUX
b2773t9684b	13	13	already	already	ADV
b2773t9684b	13	14	been	be	AUX
b2773t9684b	13	15	fixed	fix	VERB
b2773t9684b	13	16	during	during	ADP
b2773t9684b	13	17	its	its	PRON
b2773t9684b	13	18	growth	growth	NOUN
b2773t9684b	13	19	,	,	PUNCT
b2773t9684b	13	20	but	but	CCONJ
b2773t9684b	13	21	the	the	DET
b2773t9684b	13	22	holes	hole	NOUN
b2773t9684b	13	23	are	be	AUX
b2773t9684b	13	24	drained	drain	VERB
b2773t9684b	13	25	off	off	ADP
b2773t9684b	13	26	into	into	ADP
b2773t9684b	13	27	ge	ge	PROPN
b2773t9684b	13	28	.	.	PUNCT
b2773t9684b	14	1	squid	squid	NOUN
b2773t9684b	14	2	measurements	measurement	NOUN
b2773t9684b	14	3	show	show	VERB
b2773t9684b	14	4	tc	tc	PROPN
b2773t9684b	14	5	in	in	ADP
b2773t9684b	14	6	gamnas	gamnas	PROPN
b2773t9684b	14	7	drops	drop	VERB
b2773t9684b	14	8	rapidly	rapidly	ADV
b2773t9684b	14	9	when	when	SCONJ
b2773t9684b	14	10	layers	layer	NOUN
b2773t9684b	14	11	of	of	ADP
b2773t9684b	14	12	ge	ge	PROPN
b2773t9684b	14	13	are	be	AUX
b2773t9684b	14	14	deposited	deposit	VERB
b2773t9684b	14	15	over	over	ADP
b2773t9684b	14	16	it	it	PRON
b2773t9684b	14	17	,	,	PUNCT
b2773t9684b	14	18	the	the	DET
b2773t9684b	14	19	decrease	decrease	NOUN
b2773t9684b	14	20	in	in	ADP
b2773t9684b	14	21	tc	tc	NOUN
b2773t9684b	14	22	scaling	scaling	NOUN
b2773t9684b	14	23	roughly	roughly	ADV
b2773t9684b	14	24	with	with	ADP
b2773t9684b	14	25	the	the	DET
b2773t9684b	14	26	thickness	thickness	NOUN
b2773t9684b	14	27	of	of	ADP
b2773t9684b	14	28	the	the	DET
b2773t9684b	14	29	ge	ge	PROPN
b2773t9684b	14	30	layers	layer	NOUN
b2773t9684b	14	31	.	.	PUNCT
b2773t9684b	15	1	based	base	VERB
b2773t9684b	15	2	on	on	ADP
b2773t9684b	15	3	our	our	PRON
b2773t9684b	15	4	current	current	ADJ
b2773t9684b	15	5	understanding	understanding	NOUN
b2773t9684b	15	6	of	of	ADP
b2773t9684b	15	7	impurity	impurity	NOUN
b2773t9684b	15	8	band	band	NOUN
b2773t9684b	15	9	behavior	behavior	NOUN
b2773t9684b	15	10	in	in	ADP
b2773t9684b	15	11	gamnas	gamna	NOUN
b2773t9684b	15	12	,	,	PUNCT
b2773t9684b	15	13	this	this	DET
b2773t9684b	15	14	precision	precision	NOUN
b2773t9684b	15	15	control	control	NOUN
b2773t9684b	15	16	over	over	ADP
b2773t9684b	15	17	hole	hole	NOUN
b2773t9684b	15	18	concentration	concentration	NOUN
b2773t9684b	15	19	may	may	AUX
b2773t9684b	15	20	be	be	AUX
b2773t9684b	15	21	important	important	ADJ
b2773t9684b	15	22	for	for	ADP
b2773t9684b	15	23	efforts	effort	NOUN
b2773t9684b	15	24	to	to	PART
b2773t9684b	15	25	optimize	optimize	VERB
b2773t9684b	15	26	tc	tc	PROPN
b2773t9684b	15	27	.	.	PROPN
b2773t9684b	16	1	in	in	ADP
b2773t9684b	16	2	addition	addition	NOUN
b2773t9684b	16	3	,	,	PUNCT
b2773t9684b	16	4	i	i	PRON
b2773t9684b	16	5	describe	describe	VERB
b2773t9684b	16	6	efforts	effort	NOUN
b2773t9684b	16	7	(	(	PUNCT
b2773t9684b	16	8	and	and	CCONJ
b2773t9684b	16	9	their	their	PRON
b2773t9684b	16	10	unintended	unintended	ADJ
b2773t9684b	16	11	consequences	consequence	NOUN
b2773t9684b	16	12	on	on	ADP
b2773t9684b	16	13	magnetic	magnetic	ADJ
b2773t9684b	16	14	anisotropy	anisotropy	NOUN
b2773t9684b	16	15	)	)	PUNCT
b2773t9684b	16	16	to	to	PART
b2773t9684b	16	17	control	control	VERB
b2773t9684b	16	18	the	the	DET
b2773t9684b	16	19	incorporation	incorporation	NOUN
b2773t9684b	16	20	of	of	ADP
b2773t9684b	16	21	mn	mn	NOUN
b2773t9684b	16	22	in	in	ADP
b2773t9684b	16	23	substitutional	substitutional	ADJ
b2773t9684b	16	24	and	and	CCONJ
b2773t9684b	16	25	interstitial	interstitial	ADJ
b2773t9684b	16	26	positions	position	NOUN
b2773t9684b	16	27	of	of	ADP
b2773t9684b	16	28	gaas	gaas	NOUN
b2773t9684b	16	29	via	via	ADP
b2773t9684b	16	30	increasing	increase	VERB
b2773t9684b	16	31	the	the	DET
b2773t9684b	16	32	fermi	fermi	ADJ
b2773t9684b	16	33	level	level	NOUN
b2773t9684b	16	34	of	of	ADP
b2773t9684b	16	35	gamnas	gamna	NOUN
b2773t9684b	16	36	during	during	ADP
b2773t9684b	16	37	the	the	DET
b2773t9684b	16	38	growth	growth	NOUN
b2773t9684b	16	39	by	by	ADP
b2773t9684b	16	40	growing	grow	VERB
b2773t9684b	16	41	gamnas	gamna	NOUN
b2773t9684b	16	42	over	over	ADP
b2773t9684b	16	43	ge	ge	PROPN
b2773t9684b	16	44	layers	layer	NOUN
b2773t9684b	16	45	.	.	PUNCT