id	sid	tid	token	lemma	pos
9g54xg96j6r	1	1	this	this	DET
9g54xg96j6r	1	2	research	research	NOUN
9g54xg96j6r	1	3	explores	explore	VERB
9g54xg96j6r	1	4	inp	inp	PROPN
9g54xg96j6r	1	5	-	-	PUNCT
9g54xg96j6r	1	6	based	base	VERB
9g54xg96j6r	1	7	tunnel	tunnel	NOUN
9g54xg96j6r	1	8	diodes	diode	NOUN
9g54xg96j6r	1	9	to	to	PART
9g54xg96j6r	1	10	supplement	supplement	VERB
9g54xg96j6r	1	11	existing	exist	VERB
9g54xg96j6r	1	12	memory	memory	NOUN
9g54xg96j6r	1	13	and	and	CCONJ
9g54xg96j6r	1	14	high	high	ADJ
9g54xg96j6r	1	15	speed	speed	NOUN
9g54xg96j6r	1	16	ic	ic	NOUN
9g54xg96j6r	1	17	technology	technology	NOUN
9g54xg96j6r	1	18	.	.	PUNCT
9g54xg96j6r	2	1	tunneling	tunneling	NOUN
9g54xg96j6r	2	2	-	-	PUNCT
9g54xg96j6r	2	3	based	base	VERB
9g54xg96j6r	2	4	static	static	ADJ
9g54xg96j6r	2	5	random	random	ADJ
9g54xg96j6r	2	6	access	access	NOUN
9g54xg96j6r	2	7	memory	memory	NOUN
9g54xg96j6r	2	8	(	(	PUNCT
9g54xg96j6r	2	9	tsram	tsram	PROPN
9g54xg96j6r	2	10	)	)	PUNCT
9g54xg96j6r	2	11	uses	use	VERB
9g54xg96j6r	2	12	the	the	DET
9g54xg96j6r	2	13	bistability	bistability	NOUN
9g54xg96j6r	2	14	of	of	ADP
9g54xg96j6r	2	15	tunnel	tunnel	NOUN
9g54xg96j6r	2	16	diodes	diode	NOUN
9g54xg96j6r	2	17	to	to	PART
9g54xg96j6r	2	18	construct	construct	VERB
9g54xg96j6r	2	19	memory	memory	NOUN
9g54xg96j6r	2	20	elements	element	NOUN
9g54xg96j6r	2	21	and	and	CCONJ
9g54xg96j6r	2	22	requires	require	VERB
9g54xg96j6r	2	23	tunnel	tunnel	NOUN
9g54xg96j6r	2	24	diodes	diode	NOUN
9g54xg96j6r	2	25	with	with	ADP
9g54xg96j6r	2	26	peak	peak	NOUN
9g54xg96j6r	2	27	currents	current	NOUN
9g54xg96j6r	2	28	exceeding	exceed	VERB
9g54xg96j6r	2	29	transistor	transistor	NOUN
9g54xg96j6r	2	30	leakage	leakage	NOUN
9g54xg96j6r	2	31	currents	current	NOUN
9g54xg96j6r	2	32	,	,	PUNCT
9g54xg96j6r	2	33	high	high	ADJ
9g54xg96j6r	2	34	peak	peak	NOUN
9g54xg96j6r	2	35	-	-	PUNCT
9g54xg96j6r	2	36	to	to	ADP
9g54xg96j6r	2	37	-	-	PUNCT
9g54xg96j6r	2	38	valley	valley	NOUN
9g54xg96j6r	2	39	ratio	ratio	NOUN
9g54xg96j6r	2	40	(	(	PUNCT
9g54xg96j6r	2	41	pvr	pvr	PROPN
9g54xg96j6r	2	42	)	)	PUNCT
9g54xg96j6r	2	43	and	and	CCONJ
9g54xg96j6r	2	44	low	low	PROPN
9g54xg96j6r	2	45	valley	valley	NOUN
9g54xg96j6r	2	46	currents	current	NOUN
9g54xg96j6r	2	47	and	and	CCONJ
9g54xg96j6r	2	48	voltages	voltage	NOUN
9g54xg96j6r	2	49	.	.	PUNCT
9g54xg96j6r	3	1	inalas	inalas	PROPN
9g54xg96j6r	3	2	-	-	PUNCT
9g54xg96j6r	3	3	ingaas	ingaas	NOUN
9g54xg96j6r	3	4	resonant	resonant	ADJ
9g54xg96j6r	3	5	interband	interband	PROPN
9g54xg96j6r	3	6	tunnel	tunnel	NOUN
9g54xg96j6r	3	7	diodes	diode	NOUN
9g54xg96j6r	3	8	(	(	PUNCT
9g54xg96j6r	3	9	ritd	ritd	NOUN
9g54xg96j6r	3	10	)	)	PUNCT
9g54xg96j6r	3	11	were	be	AUX
9g54xg96j6r	3	12	investigated	investigate	VERB
9g54xg96j6r	3	13	for	for	ADP
9g54xg96j6r	3	14	tsram	tsram	NOUN
9g54xg96j6r	3	15	through	through	ADP
9g54xg96j6r	3	16	design	design	NOUN
9g54xg96j6r	3	17	,	,	PUNCT
9g54xg96j6r	3	18	fabrication	fabrication	NOUN
9g54xg96j6r	3	19	and	and	CCONJ
9g54xg96j6r	3	20	electrical	electrical	ADJ
9g54xg96j6r	3	21	characterizations	characterization	NOUN
9g54xg96j6r	3	22	.	.	PUNCT
9g54xg96j6r	4	1	in	in	ADP
9g54xg96j6r	4	2	particular	particular	ADJ
9g54xg96j6r	4	3	,	,	PUNCT
9g54xg96j6r	4	4	the	the	DET
9g54xg96j6r	4	5	effects	effect	NOUN
9g54xg96j6r	4	6	of	of	ADP
9g54xg96j6r	4	7	doping	dope	VERB
9g54xg96j6r	4	8	density	density	NOUN
9g54xg96j6r	4	9	,	,	PUNCT
9g54xg96j6r	4	10	barrier	barrier	NOUN
9g54xg96j6r	4	11	thicknesses	thickness	NOUN
9g54xg96j6r	4	12	and	and	CCONJ
9g54xg96j6r	4	13	alloy	alloy	ADJ
9g54xg96j6r	4	14	composition	composition	NOUN
9g54xg96j6r	4	15	on	on	ADP
9g54xg96j6r	4	16	the	the	DET
9g54xg96j6r	4	17	ritd	ritd	ADJ
9g54xg96j6r	4	18	properties	property	NOUN
9g54xg96j6r	4	19	were	be	AUX
9g54xg96j6r	4	20	studied	study	VERB
9g54xg96j6r	4	21	.	.	PUNCT
9g54xg96j6r	5	1	tunnel	tunnel	NOUN
9g54xg96j6r	5	2	diodes	diode	NOUN
9g54xg96j6r	5	3	with	with	ADP
9g54xg96j6r	5	4	peak	peak	NOUN
9g54xg96j6r	5	5	and	and	CCONJ
9g54xg96j6r	5	6	valley	valley	NOUN
9g54xg96j6r	5	7	currents	current	NOUN
9g54xg96j6r	5	8	spanning	span	VERB
9g54xg96j6r	5	9	5	5	NUM
9g54xg96j6r	5	10	orders	order	NOUN
9g54xg96j6r	5	11	of	of	ADP
9g54xg96j6r	5	12	magnitude	magnitude	NOUN
9g54xg96j6r	5	13	,	,	PUNCT
9g54xg96j6r	5	14	with	with	SCONJ
9g54xg96j6r	5	15	pvrs	pvrs	PROPN
9g54xg96j6r	5	16	as	as	ADV
9g54xg96j6r	5	17	high	high	ADJ
9g54xg96j6r	5	18	as	as	ADP
9g54xg96j6r	5	19	70	70	NUM
9g54xg96j6r	5	20	were	be	AUX
9g54xg96j6r	5	21	demonstrated	demonstrate	VERB
9g54xg96j6r	5	22	through	through	ADP
9g54xg96j6r	5	23	3x	3x	NUM
9g54xg96j6r	5	24	variation	variation	NOUN
9g54xg96j6r	5	25	in	in	ADP
9g54xg96j6r	5	26	the	the	DET
9g54xg96j6r	5	27	effective	effective	ADJ
9g54xg96j6r	5	28	doping	dope	VERB
9g54xg96j6r	5	29	density	density	NOUN
9g54xg96j6r	5	30	.	.	PUNCT
9g54xg96j6r	6	1	valley	valley	NOUN
9g54xg96j6r	6	2	currents	current	NOUN
9g54xg96j6r	6	3	as	as	ADV
9g54xg96j6r	6	4	low	low	ADJ
9g54xg96j6r	6	5	as	as	ADP
9g54xg96j6r	6	6	0.07	0.07	NUM
9g54xg96j6r	6	7	na/	na/	PROPN
9g54xg96j6r	6	8	extmu	extmu	PROPN
9g54xg96j6r	6	9	m$^2	m$^2	PROPN
9g54xg96j6r	6	10	$	$	PROPN
9g54xg96j6r	6	11	,	,	PUNCT
9g54xg96j6r	6	12	which	which	PRON
9g54xg96j6r	6	13	is	be	AUX
9g54xg96j6r	6	14	the	the	DET
9g54xg96j6r	6	15	lowest	low	ADJ
9g54xg96j6r	6	16	reported	report	VERB
9g54xg96j6r	6	17	for	for	ADP
9g54xg96j6r	6	18	tsram	tsram	ADJ
9g54xg96j6r	6	19	tunnel	tunnel	NOUN
9g54xg96j6r	6	20	diodes	diode	NOUN
9g54xg96j6r	6	21	,	,	PUNCT
9g54xg96j6r	6	22	and	and	CCONJ
9g54xg96j6r	6	23	valley	valley	NOUN
9g54xg96j6r	6	24	voltages	voltage	NOUN
9g54xg96j6r	6	25	as	as	ADV
9g54xg96j6r	6	26	low	low	ADJ
9g54xg96j6r	6	27	as	as	ADP
9g54xg96j6r	6	28	250	250	NUM
9g54xg96j6r	6	29	mv	mv	PROPN
9g54xg96j6r	6	30	were	be	AUX
9g54xg96j6r	6	31	demonstrated	demonstrate	VERB
9g54xg96j6r	6	32	.	.	PUNCT
9g54xg96j6r	7	1	submicron	submicron	NOUN
9g54xg96j6r	7	2	device	device	NOUN
9g54xg96j6r	7	3	scaling	scaling	NOUN
9g54xg96j6r	7	4	was	be	AUX
9g54xg96j6r	7	5	explored	explore	VERB
9g54xg96j6r	7	6	through	through	ADP
9g54xg96j6r	7	7	the	the	DET
9g54xg96j6r	7	8	development	development	NOUN
9g54xg96j6r	7	9	of	of	ADP
9g54xg96j6r	7	10	a	a	DET
9g54xg96j6r	7	11	fabrication	fabrication	NOUN
9g54xg96j6r	7	12	process	process	NOUN
9g54xg96j6r	7	13	.	.	PUNCT
9g54xg96j6r	8	1	to	to	PART
9g54xg96j6r	8	2	reduce	reduce	VERB
9g54xg96j6r	8	3	the	the	DET
9g54xg96j6r	8	4	parasitics	parasitic	NOUN
9g54xg96j6r	8	5	in	in	ADP
9g54xg96j6r	8	6	tunnel	tunnel	NOUN
9g54xg96j6r	8	7	diode	diode	NOUN
9g54xg96j6r	8	8	/	/	SYM
9g54xg96j6r	8	9	transistor	transistor	NOUN
9g54xg96j6r	8	10	integrated	integrate	VERB
9g54xg96j6r	8	11	circuits	circuit	NOUN
9g54xg96j6r	8	12	,	,	PUNCT
9g54xg96j6r	8	13	a	a	DET
9g54xg96j6r	8	14	novel	novel	NOUN
9g54xg96j6r	8	15	self	self	NOUN
9g54xg96j6r	8	16	-	-	PUNCT
9g54xg96j6r	8	17	aligned	align	VERB
9g54xg96j6r	8	18	contact	contact	NOUN
9g54xg96j6r	8	19	process	process	NOUN
9g54xg96j6r	8	20	using	use	VERB
9g54xg96j6r	8	21	dielectric	dielectric	ADJ
9g54xg96j6r	8	22	spacers	spacer	NOUN
9g54xg96j6r	8	23	and	and	CCONJ
9g54xg96j6r	8	24	benzocyclobutene	benzocyclobutene	PROPN
9g54xg96j6r	8	25	etchback	etchback	PROPN
9g54xg96j6r	8	26	was	be	AUX
9g54xg96j6r	8	27	developed	develop	VERB
9g54xg96j6r	8	28	.	.	PUNCT
9g54xg96j6r	9	1	silicon	silicon	PROPN
9g54xg96j6r	9	2	nitride	nitride	PROPN
9g54xg96j6r	9	3	and	and	CCONJ
9g54xg96j6r	9	4	oxide	oxide	NOUN
9g54xg96j6r	9	5	spacer	spacer	NOUN
9g54xg96j6r	9	6	sidewalls	sidewall	NOUN
9g54xg96j6r	9	7	were	be	AUX
9g54xg96j6r	9	8	demonstrated	demonstrate	VERB
9g54xg96j6r	9	9	through	through	ADP
9g54xg96j6r	9	10	the	the	DET
9g54xg96j6r	9	11	development	development	NOUN
9g54xg96j6r	9	12	of	of	ADP
9g54xg96j6r	9	13	anisotropic	anisotropic	NOUN
9g54xg96j6r	9	14	plasma	plasma	NOUN
9g54xg96j6r	9	15	etches	etche	NOUN
9g54xg96j6r	9	16	.	.	PUNCT
9g54xg96j6r	10	1	inp	inp	PROPN
9g54xg96j6r	10	2	-	-	PUNCT
9g54xg96j6r	10	3	based	base	VERB
9g54xg96j6r	10	4	monolithically	monolithically	ADV
9g54xg96j6r	10	5	integrated	integrate	VERB
9g54xg96j6r	10	6	resonant	resonant	ADJ
9g54xg96j6r	10	7	tunnel	tunnel	NOUN
9g54xg96j6r	10	8	diodes	diode	NOUN
9g54xg96j6r	10	9	and	and	CCONJ
9g54xg96j6r	10	10	heterojunction	heterojunction	VERB
9g54xg96j6r	10	11	bipolar	bipolar	ADJ
9g54xg96j6r	10	12	transistors	transistor	NOUN
9g54xg96j6r	10	13	were	be	AUX
9g54xg96j6r	10	14	fabricated	fabricate	VERB
9g54xg96j6r	10	15	using	use	VERB
9g54xg96j6r	10	16	this	this	DET
9g54xg96j6r	10	17	process	process	NOUN
9g54xg96j6r	10	18	and	and	CCONJ
9g54xg96j6r	10	19	electrically	electrically	ADV
9g54xg96j6r	10	20	characterized	characterize	VERB
9g54xg96j6r	10	21	.	.	PUNCT