id	sid	tid	token	lemma	pos
8910js97656	1	1	cmos	cmos	PROPN
8910js97656	1	2	has	have	AUX
8910js97656	1	3	been	be	AUX
8910js97656	1	4	the	the	DET
8910js97656	1	5	workhorse	workhorse	NOUN
8910js97656	1	6	for	for	ADP
8910js97656	1	7	the	the	DET
8910js97656	1	8	ic	ic	PROPN
8910js97656	1	9	industry	industry	NOUN
8910js97656	1	10	for	for	ADP
8910js97656	1	11	past	past	ADJ
8910js97656	1	12	3	3	NUM
8910js97656	1	13	decades	decade	NOUN
8910js97656	1	14	and	and	CCONJ
8910js97656	1	15	its	its	PRON
8910js97656	1	16	enormous	enormous	ADJ
8910js97656	1	17	success	success	NOUN
8910js97656	1	18	is	be	AUX
8910js97656	1	19	derived	derive	VERB
8910js97656	1	20	mainly	mainly	ADV
8910js97656	1	21	from	from	ADP
8910js97656	1	22	successive	successive	ADJ
8910js97656	1	23	improvements	improvement	NOUN
8910js97656	1	24	in	in	ADP
8910js97656	1	25	device	device	NOUN
8910js97656	1	26	scaling	scaling	NOUN
8910js97656	1	27	and	and	CCONJ
8910js97656	1	28	the	the	DET
8910js97656	1	29	concomitant	concomitant	ADJ
8910js97656	1	30	increase	increase	NOUN
8910js97656	1	31	in	in	ADP
8910js97656	1	32	device	device	NOUN
8910js97656	1	33	density	density	NOUN
8910js97656	1	34	and	and	CCONJ
8910js97656	1	35	circuit	circuit	NOUN
8910js97656	1	36	complexity	complexity	NOUN
8910js97656	1	37	on	on	ADP
8910js97656	1	38	a	a	DET
8910js97656	1	39	single	single	ADJ
8910js97656	1	40	chip	chip	NOUN
8910js97656	1	41	.	.	PUNCT
8910js97656	2	1	however	however	ADV
8910js97656	2	2	,	,	PUNCT
8910js97656	2	3	most	most	ADJ
8910js97656	2	4	observers	observer	NOUN
8910js97656	2	5	agree	agree	VERB
8910js97656	2	6	that	that	SCONJ
8910js97656	2	7	the	the	DET
8910js97656	2	8	cmos	cmos	NOUN
8910js97656	2	9	scaling	scaling	NOUN
8910js97656	2	10	will	will	AUX
8910js97656	2	11	end	end	VERB
8910js97656	2	12	sometime	sometime	ADV
8910js97656	2	13	between	between	ADP
8910js97656	2	14	2015	2015	NUM
8910js97656	2	15	and	and	CCONJ
8910js97656	2	16	2019	2019	NUM
8910js97656	2	17	due	due	ADP
8910js97656	2	18	to	to	ADP
8910js97656	2	19	several	several	ADJ
8910js97656	2	20	fundamental	fundamental	ADJ
8910js97656	2	21	reasons	reason	NOUN
8910js97656	2	22	,	,	PUNCT
8910js97656	2	23	but	but	CCONJ
8910js97656	2	24	perhaps	perhaps	ADV
8910js97656	2	25	the	the	DET
8910js97656	2	26	most	most	ADV
8910js97656	2	27	important	important	ADJ
8910js97656	2	28	being	be	AUX
8910js97656	2	29	the	the	DET
8910js97656	2	30	power	power	NOUN
8910js97656	2	31	density	density	NOUN
8910js97656	2	32	.	.	PUNCT
8910js97656	3	1	research	research	NOUN
8910js97656	3	2	has	have	AUX
8910js97656	3	3	been	be	AUX
8910js97656	3	4	seeking	seek	VERB
8910js97656	3	5	an	an	DET
8910js97656	3	6	alternative	alternative	NOUN
8910js97656	3	7	for	for	ADP
8910js97656	3	8	conventional	conventional	ADJ
8910js97656	3	9	cmos	cmos	NOUN
8910js97656	3	10	technology	technology	NOUN
8910js97656	3	11	and	and	CCONJ
8910js97656	3	12	one	one	NUM
8910js97656	3	13	of	of	ADP
8910js97656	3	14	the	the	DET
8910js97656	3	15	suggested	suggest	VERB
8910js97656	3	16	devices	device	NOUN
8910js97656	3	17	is	be	AUX
8910js97656	3	18	the	the	DET
8910js97656	3	19	single	single	ADJ
8910js97656	3	20	-	-	PUNCT
8910js97656	3	21	electron	electron	NOUN
8910js97656	3	22	transistor	transistor	NOUN
8910js97656	3	23	(	(	PUNCT
8910js97656	3	24	set	set	NOUN
8910js97656	3	25	)	)	PUNCT
8910js97656	3	26	.	.	PUNCT
8910js97656	4	1	sets	set	NOUN
8910js97656	4	2	are	be	AUX
8910js97656	4	3	3	3	NUM
8910js97656	4	4	-	-	PUNCT
8910js97656	4	5	terminal	terminal	ADJ
8910js97656	4	6	devices	device	NOUN
8910js97656	4	7	where	where	SCONJ
8910js97656	4	8	the	the	DET
8910js97656	4	9	source	source	NOUN
8910js97656	4	10	-	-	PUNCT
8910js97656	4	11	drain	drain	NOUN
8910js97656	4	12	conduction	conduction	NOUN
8910js97656	4	13	is	be	AUX
8910js97656	4	14	by	by	ADP
8910js97656	4	15	a	a	DET
8910js97656	4	16	tunneling	tunneling	NOUN
8910js97656	4	17	mechanism	mechanism	NOUN
8910js97656	4	18	through	through	ADP
8910js97656	4	19	a	a	DET
8910js97656	4	20	tiny	tiny	ADJ
8910js97656	4	21	island	island	NOUN
8910js97656	4	22	whose	whose	DET
8910js97656	4	23	potential	potential	NOUN
8910js97656	4	24	is	be	AUX
8910js97656	4	25	controlled	control	VERB
8910js97656	4	26	through	through	ADP
8910js97656	4	27	a	a	DET
8910js97656	4	28	gate	gate	NOUN
8910js97656	4	29	.	.	PUNCT
8910js97656	5	1	at	at	ADP
8910js97656	5	2	notre	notre	PROPN
8910js97656	5	3	dame	dame	NOUN
8910js97656	5	4	sets	set	NOUN
8910js97656	5	5	are	be	AUX
8910js97656	5	6	primarily	primarily	ADV
8910js97656	5	7	used	use	VERB
8910js97656	5	8	as	as	ADP
8910js97656	5	9	an	an	DET
8910js97656	5	10	enabling	enable	VERB
8910js97656	5	11	device	device	NOUN
8910js97656	5	12	for	for	ADP
8910js97656	5	13	the	the	DET
8910js97656	5	14	development	development	NOUN
8910js97656	5	15	of	of	ADP
8910js97656	5	16	qca	qca	PROPN
8910js97656	5	17	(	(	PUNCT
8910js97656	5	18	quantum	quantum	NOUN
8910js97656	5	19	-	-	PUNCT
8910js97656	5	20	dot	dot	NOUN
8910js97656	5	21	cellular	cellular	ADJ
8910js97656	5	22	automata	automata	PROPN
8910js97656	5	23	)	)	PUNCT
8910js97656	5	24	architecture	architecture	NOUN
8910js97656	5	25	,	,	PUNCT
8910js97656	5	26	which	which	PRON
8910js97656	5	27	may	may	AUX
8910js97656	5	28	be	be	AUX
8910js97656	5	29	better	well	ADV
8910js97656	5	30	suited	suit	VERB
8910js97656	5	31	for	for	ADP
8910js97656	5	32	molecular	molecular	ADJ
8910js97656	5	33	nanoelectronics	nanoelectronic	NOUN
8910js97656	5	34	than	than	ADP
8910js97656	5	35	more	more	ADJ
8910js97656	5	36	conventional	conventional	ADJ
8910js97656	5	37	approaches	approach	NOUN
8910js97656	5	38	.	.	PUNCT
8910js97656	6	1	single	single	ADJ
8910js97656	6	2	electron	electron	NOUN
8910js97656	6	3	devices	device	NOUN
8910js97656	6	4	typically	typically	ADV
8910js97656	6	5	need	need	VERB
8910js97656	6	6	to	to	PART
8910js97656	6	7	operate	operate	VERB
8910js97656	6	8	at	at	ADP
8910js97656	6	9	very	very	ADV
8910js97656	6	10	low	low	ADJ
8910js97656	6	11	temperatures	temperature	NOUN
8910js97656	6	12	and	and	CCONJ
8910js97656	6	13	also	also	ADV
8910js97656	6	14	suffer	suffer	VERB
8910js97656	6	15	from	from	ADP
8910js97656	6	16	the	the	DET
8910js97656	6	17	problem	problem	NOUN
8910js97656	6	18	of	of	ADP
8910js97656	6	19	fluctuating	fluctuate	VERB
8910js97656	6	20	background	background	NOUN
8910js97656	6	21	charges	charge	NOUN
8910js97656	6	22	that	that	PRON
8910js97656	6	23	randomly	randomly	ADV
8910js97656	6	24	change	change	VERB
8910js97656	6	25	the	the	DET
8910js97656	6	26	device	device	NOUN
8910js97656	6	27	behavior	behavior	NOUN
8910js97656	6	28	.	.	PUNCT
8910js97656	7	1	work	work	NOUN
8910js97656	7	2	done	do	VERB
8910js97656	7	3	by	by	ADP
8910js97656	7	4	other	other	ADJ
8910js97656	7	5	researchers	researcher	NOUN
8910js97656	7	6	has	have	AUX
8910js97656	7	7	shown	show	VERB
8910js97656	7	8	that	that	SCONJ
8910js97656	7	9	si	si	PROPN
8910js97656	7	10	based	base	VERB
8910js97656	7	11	devices	device	NOUN
8910js97656	7	12	are	be	AUX
8910js97656	7	13	less	less	ADV
8910js97656	7	14	vulnerable	vulnerable	ADJ
8910js97656	7	15	to	to	ADP
8910js97656	7	16	background	background	NOUN
8910js97656	7	17	charge	charge	NOUN
8910js97656	7	18	offsets	offset	NOUN
8910js97656	7	19	,	,	PUNCT
8910js97656	7	20	and	and	CCONJ
8910js97656	7	21	by	by	ADP
8910js97656	7	22	utilizing	utilize	VERB
8910js97656	7	23	techniques	technique	NOUN
8910js97656	7	24	developed	develop	VERB
8910js97656	7	25	for	for	ADP
8910js97656	7	26	vlsi	vlsi	ADJ
8910js97656	7	27	technology	technology	NOUN
8910js97656	7	28	one	one	PRON
8910js97656	7	29	can	can	AUX
8910js97656	7	30	make	make	VERB
8910js97656	7	31	the	the	DET
8910js97656	7	32	si	si	PROPN
8910js97656	7	33	devices	device	NOUN
8910js97656	7	34	dimensionally	dimensionally	ADV
8910js97656	7	35	smaller	small	ADJ
8910js97656	7	36	and	and	CCONJ
8910js97656	7	37	hence	hence	ADV
8910js97656	7	38	operate	operate	VERB
8910js97656	7	39	at	at	ADP
8910js97656	7	40	room	room	NOUN
8910js97656	7	41	temperature	temperature	NOUN
8910js97656	7	42	and	and	CCONJ
8910js97656	7	43	above	above	ADV
8910js97656	7	44	.	.	PUNCT
8910js97656	8	1	this	this	DET
8910js97656	8	2	dissertation	dissertation	NOUN
8910js97656	8	3	reports	report	VERB
8910js97656	8	4	the	the	DET
8910js97656	8	5	development	development	NOUN
8910js97656	8	6	and	and	CCONJ
8910js97656	8	7	experimental	experimental	ADJ
8910js97656	8	8	realization	realization	NOUN
8910js97656	8	9	of	of	ADP
8910js97656	8	10	a	a	DET
8910js97656	8	11	novel	novel	ADJ
8910js97656	8	12	fabrication	fabrication	NOUN
8910js97656	8	13	technique	technique	NOUN
8910js97656	8	14	using	use	VERB
8910js97656	8	15	lithography	lithography	NOUN
8910js97656	8	16	,	,	PUNCT
8910js97656	8	17	dry	dry	ADJ
8910js97656	8	18	etching	etching	NOUN
8910js97656	8	19	and	and	CCONJ
8910js97656	8	20	chemical	chemical	NOUN
8910js97656	8	21	mechanical	mechanical	ADJ
8910js97656	8	22	polishing	polishing	NOUN
8910js97656	8	23	(	(	PUNCT
8910js97656	8	24	cmp	cmp	PROPN
8910js97656	8	25	)	)	PUNCT
8910js97656	8	26	to	to	PART
8910js97656	8	27	manufacture	manufacture	VERB
8910js97656	8	28	si	si	NOUN
8910js97656	8	29	-	-	PUNCT
8910js97656	8	30	sets	set	NOUN
8910js97656	8	31	with	with	ADP
8910js97656	8	32	well	well	ADV
8910js97656	8	33	-	-	PUNCT
8910js97656	8	34	defined	define	VERB
8910js97656	8	35	island	island	NOUN
8910js97656	8	36	and	and	CCONJ
8910js97656	8	37	tunnel	tunnel	NOUN
8910js97656	8	38	junctions	junction	NOUN
8910js97656	8	39	.	.	PUNCT
8910js97656	9	1	the	the	DET
8910js97656	9	2	device	device	NOUN
8910js97656	9	3	design	design	NOUN
8910js97656	9	4	incorporates	incorporate	VERB
8910js97656	9	5	the	the	DET
8910js97656	9	6	best	good	ADJ
8910js97656	9	7	working	working	NOUN
8910js97656	9	8	material	material	NOUN
8910js97656	9	9	(	(	PUNCT
8910js97656	9	10	si	si	X
8910js97656	9	11	)	)	PUNCT
8910js97656	9	12	with	with	ADP
8910js97656	9	13	the	the	DET
8910js97656	9	14	most	most	ADV
8910js97656	9	15	-	-	PUNCT
8910js97656	9	16	studied	study	VERB
8910js97656	9	17	insulator	insulator	NOUN
8910js97656	9	18	(	(	PUNCT
8910js97656	9	19	silicon	silicon	NOUN
8910js97656	9	20	dioxide	dioxide	NOUN
8910js97656	9	21	)	)	PUNCT
8910js97656	9	22	for	for	ADP
8910js97656	9	23	tunnel	tunnel	NOUN
8910js97656	9	24	junctions	junction	NOUN
8910js97656	9	25	in	in	ADP
8910js97656	9	26	a	a	DET
8910js97656	9	27	cmos	cmos	NOUN
8910js97656	9	28	compatible	compatible	ADJ
8910js97656	9	29	process	process	NOUN
8910js97656	9	30	flow	flow	NOUN
8910js97656	9	31	.	.	PUNCT
8910js97656	10	1	the	the	DET
8910js97656	10	2	reported	reported	ADJ
8910js97656	10	3	si	si	NOUN
8910js97656	10	4	-	-	PUNCT
8910js97656	10	5	sets	set	NOUN
8910js97656	10	6	are	be	AUX
8910js97656	10	7	the	the	DET
8910js97656	10	8	first	first	ADJ
8910js97656	10	9	to	to	PART
8910js97656	10	10	be	be	AUX
8910js97656	10	11	fabricated	fabricate	VERB
8910js97656	10	12	using	use	VERB
8910js97656	10	13	our	our	PRON
8910js97656	10	14	methodology	methodology	NOUN
8910js97656	10	15	and	and	CCONJ
8910js97656	10	16	also	also	ADV
8910js97656	10	17	the	the	DET
8910js97656	10	18	first	first	ADJ
8910js97656	10	19	to	to	PART
8910js97656	10	20	be	be	AUX
8910js97656	10	21	thoroughly	thoroughly	ADV
8910js97656	10	22	studied	study	VERB
8910js97656	10	23	and	and	CCONJ
8910js97656	10	24	with	with	ADP
8910js97656	10	25	published	published	ADJ
8910js97656	10	26	results	result	NOUN
8910js97656	10	27	.	.	PUNCT
8910js97656	11	1	the	the	DET
8910js97656	11	2	fabricated	fabricate	VERB
8910js97656	11	3	device	device	NOUN
8910js97656	11	4	showed	show	VERB
8910js97656	11	5	coulomb	coulomb	NOUN
8910js97656	11	6	blockade	blockade	NOUN
8910js97656	11	7	oscillations	oscillation	NOUN
8910js97656	11	8	above	above	ADP
8910js97656	11	9	150	150	NUM
8910js97656	11	10	k	k	PROPN
8910js97656	11	11	and	and	CCONJ
8910js97656	11	12	the	the	DET
8910js97656	11	13	estimated	estimate	VERB
8910js97656	11	14	charging	charge	VERB
8910js97656	11	15	energy	energy	NOUN
8910js97656	11	16	was	be	AUX
8910js97656	11	17	in	in	ADP
8910js97656	11	18	excess	excess	NOUN
8910js97656	11	19	of	of	ADP
8910js97656	11	20	20	20	NUM
8910js97656	11	21	mev	mev	PROPN
8910js97656	11	22	.	.	PUNCT
8910js97656	12	1	the	the	DET
8910js97656	12	2	stability	stability	NOUN
8910js97656	12	3	of	of	ADP
8910js97656	12	4	the	the	DET
8910js97656	12	5	device	device	NOUN
8910js97656	12	6	was	be	AUX
8910js97656	12	7	studied	study	VERB
8910js97656	12	8	by	by	ADP
8910js97656	12	9	measuring	measure	VERB
8910js97656	12	10	the	the	DET
8910js97656	12	11	gate	gate	NOUN
8910js97656	12	12	dependence	dependence	NOUN
8910js97656	12	13	of	of	ADP
8910js97656	12	14	the	the	DET
8910js97656	12	15	source	source	NOUN
8910js97656	12	16	/	/	SYM
8910js97656	12	17	drain	drain	NOUN
8910js97656	12	18	conductance	conductance	NOUN
8910js97656	12	19	for	for	ADP
8910js97656	12	20	over	over	ADP
8910js97656	12	21	19	19	NUM
8910js97656	12	22	hours	hour	NOUN
8910js97656	12	23	at	at	ADP
8910js97656	12	24	77	77	NUM
8910js97656	12	25	k	k	PROPN
8910js97656	12	26	and	and	CCONJ
8910js97656	12	27	showed	show	VERB
8910js97656	12	28	very	very	ADV
8910js97656	12	29	stable	stable	ADJ
8910js97656	12	30	device	device	NOUN
8910js97656	12	31	behavior	behavior	NOUN
8910js97656	12	32	for	for	ADP
8910js97656	12	33	the	the	DET
8910js97656	12	34	entire	entire	ADJ
8910js97656	12	35	period	period	NOUN
8910js97656	12	36	with	with	ADP
8910js97656	12	37	a	a	DET
8910js97656	12	38	charge	charge	NOUN
8910js97656	12	39	offset	offset	VERB
8910js97656	12	40	of	of	ADP
8910js97656	12	41	0.04$e$.	0.04$e$.	NUM
8910js97656	12	42	the	the	DET
8910js97656	12	43	deviation	deviation	NOUN
8910js97656	12	44	of	of	ADP
8910js97656	12	45	the	the	DET
8910js97656	12	46	successful	successful	ADJ
8910js97656	12	47	device	device	NOUN
8910js97656	12	48	from	from	ADP
8910js97656	12	49	the	the	DET
8910js97656	12	50	intended	intend	VERB
8910js97656	12	51	design	design	NOUN
8910js97656	12	52	has	have	AUX
8910js97656	12	53	been	be	AUX
8910js97656	12	54	studied	study	VERB
8910js97656	12	55	through	through	ADP
8910js97656	12	56	experiments	experiment	NOUN
8910js97656	12	57	and	and	CCONJ
8910js97656	12	58	analysis	analysis	NOUN
8910js97656	12	59	.	.	PUNCT
8910js97656	13	1	improvements	improvement	NOUN
8910js97656	13	2	to	to	ADP
8910js97656	13	3	the	the	DET
8910js97656	13	4	fabrication	fabrication	NOUN
8910js97656	13	5	scheme	scheme	NOUN
8910js97656	13	6	have	have	AUX
8910js97656	13	7	been	be	AUX
8910js97656	13	8	suggested	suggest	VERB
8910js97656	13	9	to	to	PART
8910js97656	13	10	eliminate	eliminate	VERB
8910js97656	13	11	the	the	DET
8910js97656	13	12	problems	problem	NOUN
8910js97656	13	13	encountered	encounter	VERB
8910js97656	13	14	and	and	CCONJ
8910js97656	13	15	improve	improve	VERB
8910js97656	13	16	the	the	DET
8910js97656	13	17	yield	yield	NOUN
8910js97656	13	18	.	.	PUNCT