id	sid	tid	token	lemma	pos
7w62f764365	1	1	tunnel	tunnel	NOUN
7w62f764365	1	2	diodes	diode	NOUN
7w62f764365	1	3	have	have	AUX
7w62f764365	1	4	received	receive	VERB
7w62f764365	1	5	interest	interest	NOUN
7w62f764365	1	6	because	because	SCONJ
7w62f764365	1	7	of	of	ADP
7w62f764365	1	8	their	their	PRON
7w62f764365	1	9	remarkable	remarkable	ADJ
7w62f764365	1	10	multivalued	multivalue	VERB
7w62f764365	1	11	i	i	PROPN
7w62f764365	1	12	-	-	PUNCT
7w62f764365	1	13	v	v	NOUN
7w62f764365	1	14	characteristic	characteristic	NOUN
7w62f764365	1	15	and	and	CCONJ
7w62f764365	1	16	inherent	inherent	ADJ
7w62f764365	1	17	high	high	ADJ
7w62f764365	1	18	switching	switching	NOUN
7w62f764365	1	19	speeds	speed	NOUN
7w62f764365	1	20	.	.	PUNCT
7w62f764365	2	1	the	the	DET
7w62f764365	2	2	exploration	exploration	NOUN
7w62f764365	2	3	of	of	ADP
7w62f764365	2	4	tunnel	tunnel	NOUN
7w62f764365	2	5	diode	diode	NOUN
7w62f764365	2	6	applications	application	NOUN
7w62f764365	2	7	was	be	AUX
7w62f764365	2	8	impeded	impede	VERB
7w62f764365	2	9	by	by	ADP
7w62f764365	2	10	the	the	DET
7w62f764365	2	11	incompatibility	incompatibility	NOUN
7w62f764365	2	12	of	of	ADP
7w62f764365	2	13	tunnel	tunnel	NOUN
7w62f764365	2	14	diode	diode	NOUN
7w62f764365	2	15	fabrication	fabrication	NOUN
7w62f764365	2	16	technology	technology	NOUN
7w62f764365	2	17	with	with	ADP
7w62f764365	2	18	integrated	integrate	VERB
7w62f764365	2	19	-	-	PUNCT
7w62f764365	2	20	circuit	circuit	NOUN
7w62f764365	2	21	processing	processing	NOUN
7w62f764365	2	22	.	.	PUNCT
7w62f764365	3	1	rapid	rapid	ADJ
7w62f764365	3	2	thermal	thermal	ADJ
7w62f764365	3	3	diffusion	diffusion	NOUN
7w62f764365	3	4	from	from	ADP
7w62f764365	3	5	spin	spin	NOUN
7w62f764365	3	6	-	-	PUNCT
7w62f764365	3	7	on	on	ADP
7w62f764365	3	8	diffusants	diffusant	NOUN
7w62f764365	3	9	is	be	AUX
7w62f764365	3	10	the	the	DET
7w62f764365	3	11	particular	particular	ADJ
7w62f764365	3	12	focus	focus	NOUN
7w62f764365	3	13	of	of	ADP
7w62f764365	3	14	this	this	DET
7w62f764365	3	15	work	work	NOUN
7w62f764365	3	16	as	as	ADP
7w62f764365	3	17	a	a	DET
7w62f764365	3	18	basis	basis	NOUN
7w62f764365	3	19	for	for	ADP
7w62f764365	3	20	establishing	establish	VERB
7w62f764365	3	21	a	a	DET
7w62f764365	3	22	rapid	rapid	ADJ
7w62f764365	3	23	thermal	thermal	ADJ
7w62f764365	3	24	processing	processing	NOUN
7w62f764365	3	25	method	method	NOUN
7w62f764365	3	26	compatible	compatible	ADJ
7w62f764365	3	27	with	with	ADP
7w62f764365	3	28	commercial	commercial	ADJ
7w62f764365	3	29	foundry	foundry	VERB
7w62f764365	3	30	processes	process	NOUN
7w62f764365	3	31	.	.	PUNCT
7w62f764365	4	1	vertical	vertical	ADJ
7w62f764365	4	2	tunnel	tunnel	NOUN
7w62f764365	4	3	diodes	diode	NOUN
7w62f764365	4	4	formed	form	VERB
7w62f764365	4	5	on	on	ADP
7w62f764365	4	6	high	high	ADJ
7w62f764365	4	7	resistivity	resistivity	NOUN
7w62f764365	4	8	substrates	substrate	NOUN
7w62f764365	4	9	have	have	AUX
7w62f764365	4	10	been	be	AUX
7w62f764365	4	11	demonstrated	demonstrate	VERB
7w62f764365	4	12	to	to	PART
7w62f764365	4	13	allow	allow	VERB
7w62f764365	4	14	s	s	NOUN
7w62f764365	4	15	-	-	PUNCT
7w62f764365	4	16	parameter	parameter	NOUN
7w62f764365	4	17	measurements	measurement	NOUN
7w62f764365	4	18	and	and	CCONJ
7w62f764365	4	19	extraction	extraction	NOUN
7w62f764365	4	20	of	of	ADP
7w62f764365	4	21	a	a	DET
7w62f764365	4	22	full	full	ADJ
7w62f764365	4	23	ac	ac	PROPN
7w62f764365	4	24	device	device	NOUN
7w62f764365	4	25	model	model	NOUN
7w62f764365	4	26	.	.	PUNCT
7w62f764365	5	1	a	a	DET
7w62f764365	5	2	current	current	ADJ
7w62f764365	5	3	density	density	NOUN
7w62f764365	5	4	of	of	ADP
7w62f764365	5	5	2.7	2.7	NUM
7w62f764365	5	6	ì_å_a	ì_å_a	PROPN
7w62f764365	5	7	/	/	SYM
7w62f764365	5	8	ì_å_m2	ì_å_m2	PROPN
7w62f764365	5	9	and	and	CCONJ
7w62f764365	5	10	peak	peak	NOUN
7w62f764365	5	11	-	-	PUNCT
7w62f764365	5	12	to	to	ADP
7w62f764365	5	13	-	-	PUNCT
7w62f764365	5	14	valley	valley	NOUN
7w62f764365	5	15	current	current	ADJ
7w62f764365	5	16	ratio	ratio	NOUN
7w62f764365	5	17	(	(	PUNCT
7w62f764365	5	18	pvr	pvr	NOUN
7w62f764365	5	19	)	)	PUNCT
7w62f764365	5	20	of	of	ADP
7w62f764365	5	21	2.25	2.25	NUM
7w62f764365	5	22	has	have	AUX
7w62f764365	5	23	been	be	AUX
7w62f764365	5	24	achieved	achieve	VERB
7w62f764365	5	25	,	,	PUNCT
7w62f764365	5	26	which	which	PRON
7w62f764365	5	27	is	be	AUX
7w62f764365	5	28	the	the	DET
7w62f764365	5	29	best	good	ADJ
7w62f764365	5	30	result	result	NOUN
7w62f764365	5	31	ever	ever	ADV
7w62f764365	5	32	achieved	achieve	VERB
7w62f764365	5	33	using	use	VERB
7w62f764365	5	34	spin	spin	NOUN
7w62f764365	5	35	-	-	PUNCT
7w62f764365	5	36	on	on	ADP
7w62f764365	5	37	diffusants	diffusant	NOUN
7w62f764365	5	38	.	.	PUNCT
7w62f764365	6	1	several	several	ADJ
7w62f764365	6	2	other	other	ADJ
7w62f764365	6	3	approaches	approach	NOUN
7w62f764365	6	4	were	be	AUX
7w62f764365	6	5	also	also	ADV
7w62f764365	6	6	explored	explore	VERB
7w62f764365	6	7	such	such	ADJ
7w62f764365	6	8	as	as	ADP
7w62f764365	6	9	flash	flash	NOUN
7w62f764365	6	10	-	-	PUNCT
7w62f764365	6	11	lamp	lamp	NOUN
7w62f764365	6	12	annealing	annealing	NOUN
7w62f764365	6	13	and	and	CCONJ
7w62f764365	6	14	rapid	rapid	ADJ
7w62f764365	6	15	thermal	thermal	ADJ
7w62f764365	6	16	annealing	annealing	NOUN
7w62f764365	6	17	from	from	ADP
7w62f764365	6	18	doped	doped	ADJ
7w62f764365	6	19	metal	metal	NOUN
7w62f764365	6	20	sources	source	NOUN
7w62f764365	6	21	.	.	PUNCT
7w62f764365	7	1	phosphorus	phosphorus	NOUN
7w62f764365	7	2	activation	activation	NOUN
7w62f764365	7	3	was	be	AUX
7w62f764365	7	4	improved	improve	VERB
7w62f764365	7	5	using	use	VERB
7w62f764365	7	6	flash	flash	NOUN
7w62f764365	7	7	-	-	PUNCT
7w62f764365	7	8	lamp	lamp	NOUN
7w62f764365	7	9	annealing	annealing	NOUN
7w62f764365	7	10	.	.	PUNCT
7w62f764365	8	1	tunnel	tunnel	NOUN
7w62f764365	8	2	diodes	diode	NOUN
7w62f764365	8	3	were	be	AUX
7w62f764365	8	4	formed	form	VERB
7w62f764365	8	5	by	by	ADP
7w62f764365	8	6	rapid	rapid	ADJ
7w62f764365	8	7	thermal	thermal	ADJ
7w62f764365	8	8	annealing	annealing	NOUN
7w62f764365	8	9	from	from	ADP
7w62f764365	8	10	an	an	DET
7w62f764365	8	11	al	al	PROPN
7w62f764365	8	12	:	:	PUNCT
7w62f764365	8	13	b	b	ADP
7w62f764365	8	14	:	:	PUNCT
7w62f764365	8	15	si	si	X
7w62f764365	8	16	source	source	NOUN
7w62f764365	8	17	on	on	ADP
7w62f764365	8	18	si	si	X
7w62f764365	8	19	with	with	ADP
7w62f764365	8	20	a	a	DET
7w62f764365	8	21	peak	peak	NOUN
7w62f764365	8	22	current	current	ADJ
7w62f764365	8	23	density	density	NOUN
7w62f764365	8	24	of	of	ADP
7w62f764365	8	25	2.7	2.7	NUM
7w62f764365	8	26	ì_å_a	ì_å_a	PROPN
7w62f764365	8	27	/	/	SYM
7w62f764365	8	28	ì_å_m2	ì_å_m2	NUM
7w62f764365	8	29	.	.	PUNCT
7w62f764365	9	1	backward	backward	ADJ
7w62f764365	9	2	diodes	diode	NOUN
7w62f764365	9	3	were	be	AUX
7w62f764365	9	4	formed	form	VERB
7w62f764365	9	5	by	by	ADP
7w62f764365	9	6	evaporating	evaporate	VERB
7w62f764365	9	7	50	50	NUM
7w62f764365	9	8	and	and	CCONJ
7w62f764365	9	9	100	100	NUM
7w62f764365	9	10	nm	nm	NOUN
7w62f764365	9	11	undoped	undoped	ADJ
7w62f764365	9	12	ge	ge	PROPN
7w62f764365	9	13	layer	layer	NOUN
7w62f764365	9	14	as	as	ADV
7w62f764365	9	15	well	well	ADV
7w62f764365	9	16	as	as	ADP
7w62f764365	9	17	100	100	NUM
7w62f764365	9	18	nm	nm	NOUN
7w62f764365	9	19	al	al	PROPN
7w62f764365	9	20	on	on	ADP
7w62f764365	9	21	an	an	DET
7w62f764365	9	22	n+	n+	NOUN
7w62f764365	9	23	ge	ge	PROPN
7w62f764365	9	24	.	.	PUNCT
7w62f764365	10	1	this	this	PRON
7w62f764365	10	2	indicates	indicate	VERB
7w62f764365	10	3	that	that	SCONJ
7w62f764365	10	4	the	the	DET
7w62f764365	10	5	undoped	undoped	ADJ
7w62f764365	10	6	amorphous	amorphous	ADJ
7w62f764365	10	7	ge	ge	PROPN
7w62f764365	10	8	was	be	AUX
7w62f764365	10	9	successfully	successfully	ADV
7w62f764365	10	10	transformed	transform	VERB
7w62f764365	10	11	into	into	ADP
7w62f764365	10	12	heavily	heavily	ADV
7w62f764365	10	13	doped	dope	VERB
7w62f764365	10	14	crystalline	crystalline	NOUN
7w62f764365	10	15	ge	ge	PROPN
7w62f764365	10	16	.	.	PUNCT
7w62f764365	11	1	transmission	transmission	NOUN
7w62f764365	11	2	electron	electron	NOUN
7w62f764365	11	3	microscopy	microscopy	NOUN
7w62f764365	11	4	(	(	PUNCT
7w62f764365	11	5	tem	tem	PROPN
7w62f764365	11	6	)	)	PUNCT
7w62f764365	11	7	was	be	AUX
7w62f764365	11	8	taken	take	VERB
7w62f764365	11	9	which	which	PRON
7w62f764365	11	10	allow	allow	VERB
7w62f764365	11	11	characterization	characterization	NOUN
7w62f764365	11	12	of	of	ADP
7w62f764365	11	13	the	the	DET
7w62f764365	11	14	regrown	regrown	VERB
7w62f764365	11	15	layer	layer	NOUN
7w62f764365	11	16	thickness	thickness	NOUN
7w62f764365	11	17	.	.	PUNCT
7w62f764365	12	1	tem	tem	PROPN
7w62f764365	12	2	also	also	ADV
7w62f764365	12	3	showed	show	VERB
7w62f764365	12	4	that	that	SCONJ
7w62f764365	12	5	the	the	DET
7w62f764365	12	6	regrown	regrown	VERB
7w62f764365	12	7	layer	layer	NOUN
7w62f764365	12	8	is	be	AUX
7w62f764365	12	9	clearly	clearly	ADV
7w62f764365	12	10	epitaxial	epitaxial	ADJ
7w62f764365	12	11	and	and	CCONJ
7w62f764365	12	12	free	free	ADJ
7w62f764365	12	13	of	of	ADP
7w62f764365	12	14	defects	defect	NOUN
7w62f764365	12	15	.	.	PUNCT
7w62f764365	13	1	the	the	DET
7w62f764365	13	2	potential	potential	NOUN
7w62f764365	13	3	and	and	CCONJ
7w62f764365	13	4	limitations	limitation	NOUN
7w62f764365	13	5	of	of	ADP
7w62f764365	13	6	each	each	DET
7w62f764365	13	7	approach	approach	NOUN
7w62f764365	13	8	is	be	AUX
7w62f764365	13	9	discussed	discuss	VERB
7w62f764365	13	10	in	in	ADP
7w62f764365	13	11	this	this	DET
7w62f764365	13	12	work	work	NOUN
7w62f764365	13	13	.	.	PUNCT