id	sid	tid	token	lemma	pos
7h149p3108c	1	1	the	the	DET
7h149p3108c	1	2	prospects	prospect	NOUN
7h149p3108c	1	3	for	for	ADP
7h149p3108c	1	4	developing	develop	VERB
7h149p3108c	1	5	gaas	gaas	NOUN
7h149p3108c	1	6	-	-	PUNCT
7h149p3108c	1	7	based	base	VERB
7h149p3108c	1	8	metal	metal	NOUN
7h149p3108c	1	9	-	-	PUNCT
7h149p3108c	1	10	oxide	oxide	NOUN
7h149p3108c	1	11	-	-	PUNCT
7h149p3108c	1	12	semiconductor	semiconductor	NOUN
7h149p3108c	1	13	field	field	NOUN
7h149p3108c	1	14	-	-	PUNCT
7h149p3108c	1	15	effect	effect	NOUN
7h149p3108c	1	16	transistors	transistor	NOUN
7h149p3108c	1	17	(	(	PUNCT
7h149p3108c	1	18	mosfets	mosfet	NOUN
7h149p3108c	1	19	)	)	PUNCT
7h149p3108c	1	20	using	use	VERB
7h149p3108c	1	21	the	the	DET
7h149p3108c	1	22	wet	wet	ADJ
7h149p3108c	1	23	thermal	thermal	ADJ
7h149p3108c	1	24	oxide	oxide	NOUN
7h149p3108c	1	25	of	of	ADP
7h149p3108c	1	26	inalp	inalp	NOUN
7h149p3108c	1	27	as	as	SCONJ
7h149p3108c	1	28	the	the	DET
7h149p3108c	1	29	gate	gate	NOUN
7h149p3108c	1	30	dielectric	dielectric	NOUN
7h149p3108c	1	31	have	have	AUX
7h149p3108c	1	32	been	be	AUX
7h149p3108c	1	33	investigated	investigate	VERB
7h149p3108c	1	34	.	.	PUNCT
7h149p3108c	2	1	the	the	DET
7h149p3108c	2	2	microstructural	microstructural	ADJ
7h149p3108c	2	3	properties	property	NOUN
7h149p3108c	2	4	of	of	ADP
7h149p3108c	2	5	inalp	inalp	PROPN
7h149p3108c	2	6	oxide	oxide	NOUN
7h149p3108c	2	7	have	have	AUX
7h149p3108c	2	8	been	be	AUX
7h149p3108c	2	9	examined	examine	VERB
7h149p3108c	2	10	,	,	PUNCT
7h149p3108c	2	11	and	and	CCONJ
7h149p3108c	2	12	the	the	DET
7h149p3108c	2	13	mechanisms	mechanism	NOUN
7h149p3108c	2	14	governing	govern	VERB
7h149p3108c	2	15	the	the	DET
7h149p3108c	2	16	oxidation	oxidation	NOUN
7h149p3108c	2	17	of	of	ADP
7h149p3108c	2	18	inalp	inalp	NOUN
7h149p3108c	2	19	have	have	AUX
7h149p3108c	2	20	been	be	AUX
7h149p3108c	2	21	explored	explore	VERB
7h149p3108c	2	22	.	.	PUNCT
7h149p3108c	3	1	fabrication	fabrication	NOUN
7h149p3108c	3	2	processes	process	NOUN
7h149p3108c	3	3	for	for	ADP
7h149p3108c	3	4	realizing	realize	VERB
7h149p3108c	3	5	gaas	gaas	NOUN
7h149p3108c	3	6	-	-	PUNCT
7h149p3108c	3	7	channel	channel	NOUN
7h149p3108c	3	8	mosfets	mosfet	NOUN
7h149p3108c	3	9	with	with	ADP
7h149p3108c	3	10	sub	sub	ADJ
7h149p3108c	3	11	-	-	ADJ
7h149p3108c	3	12	micron	micron	ADJ
7h149p3108c	3	13	gate	gate	NOUN
7h149p3108c	3	14	lengths	length	NOUN
7h149p3108c	3	15	have	have	AUX
7h149p3108c	3	16	been	be	AUX
7h149p3108c	3	17	developed	develop	VERB
7h149p3108c	3	18	and	and	CCONJ
7h149p3108c	3	19	used	use	VERB
7h149p3108c	3	20	to	to	PART
7h149p3108c	3	21	demonstrate	demonstrate	VERB
7h149p3108c	3	22	depletion	depletion	ADJ
7h149p3108c	3	23	-	-	PUNCT
7h149p3108c	3	24	mode	mode	NOUN
7h149p3108c	3	25	transistors	transistor	NOUN
7h149p3108c	3	26	.	.	PUNCT
7h149p3108c	4	1	the	the	DET
7h149p3108c	4	2	inalp	inalp	PROPN
7h149p3108c	4	3	oxide	oxide	NOUN
7h149p3108c	4	4	is	be	AUX
7h149p3108c	4	5	found	find	VERB
7h149p3108c	4	6	to	to	PART
7h149p3108c	4	7	be	be	AUX
7h149p3108c	4	8	largely	largely	ADV
7h149p3108c	4	9	amorphous	amorphous	ADJ
7h149p3108c	4	10	,	,	PUNCT
7h149p3108c	4	11	but	but	CCONJ
7h149p3108c	4	12	contains	contain	VERB
7h149p3108c	4	13	small	small	ADJ
7h149p3108c	4	14	microcrystalline	microcrystalline	NOUN
7h149p3108c	4	15	regions	region	NOUN
7h149p3108c	4	16	.	.	PUNCT
7h149p3108c	5	1	energy	energy	NOUN
7h149p3108c	5	2	dispersive	dispersive	NOUN
7h149p3108c	5	3	x	x	NOUN
7h149p3108c	5	4	-	-	NOUN
7h149p3108c	5	5	ray	ray	NOUN
7h149p3108c	5	6	spectroscopic	spectroscopic	ADJ
7h149p3108c	5	7	analysis	analysis	NOUN
7h149p3108c	5	8	shows	show	VERB
7h149p3108c	5	9	that	that	SCONJ
7h149p3108c	5	10	the	the	DET
7h149p3108c	5	11	oxide	oxide	NOUN
7h149p3108c	5	12	is	be	AUX
7h149p3108c	5	13	composed	compose	VERB
7h149p3108c	5	14	of	of	ADP
7h149p3108c	5	15	all	all	DET
7h149p3108c	5	16	pre	pre	ADJ
7h149p3108c	5	17	-	-	ADJ
7h149p3108c	5	18	existing	exist	VERB
7h149p3108c	5	19	elements	element	NOUN
7h149p3108c	5	20	(	(	PUNCT
7h149p3108c	5	21	in	in	ADP
7h149p3108c	5	22	,	,	PUNCT
7h149p3108c	5	23	al	al	PROPN
7h149p3108c	5	24	,	,	PUNCT
7h149p3108c	5	25	p	p	PROPN
7h149p3108c	5	26	)	)	PUNCT
7h149p3108c	5	27	in	in	ADP
7h149p3108c	5	28	addition	addition	NOUN
7h149p3108c	5	29	to	to	ADP
7h149p3108c	5	30	o.	o.	PROPN
7h149p3108c	5	31	a	a	DET
7h149p3108c	5	32	layer	layer	NOUN
7h149p3108c	5	33	of	of	ADP
7h149p3108c	5	34	in	in	ADP
7h149p3108c	5	35	-	-	PUNCT
7h149p3108c	5	36	rich	rich	ADJ
7h149p3108c	5	37	particles	particle	NOUN
7h149p3108c	5	38	was	be	AUX
7h149p3108c	5	39	observed	observe	VERB
7h149p3108c	5	40	at	at	ADP
7h149p3108c	5	41	the	the	DET
7h149p3108c	5	42	oxide	oxide	NOUN
7h149p3108c	5	43	-	-	PUNCT
7h149p3108c	5	44	semiconductor	semiconductor	NOUN
7h149p3108c	5	45	interface	interface	NOUN
7h149p3108c	5	46	for	for	ADP
7h149p3108c	5	47	thick	thick	ADJ
7h149p3108c	5	48	oxides	oxide	NOUN
7h149p3108c	5	49	(	(	PUNCT
7h149p3108c	5	50	thicknesses	thicknesse	VERB
7h149p3108c	5	51	greater	great	ADJ
7h149p3108c	5	52	than	than	ADP
7h149p3108c	5	53	17	17	NUM
7h149p3108c	5	54	nm	nm	NOUN
7h149p3108c	5	55	)	)	PUNCT
7h149p3108c	5	56	,	,	PUNCT
7h149p3108c	5	57	but	but	CCONJ
7h149p3108c	5	58	is	be	AUX
7h149p3108c	5	59	absent	absent	ADJ
7h149p3108c	5	60	in	in	ADP
7h149p3108c	5	61	thin	thin	ADJ
7h149p3108c	5	62	'	'	PUNCT
7h149p3108c	5	63	device	device	NOUN
7h149p3108c	5	64	-	-	PUNCT
7h149p3108c	5	65	scale	scale	NOUN
7h149p3108c	5	66	'	'	PUNCT
7h149p3108c	5	67	oxides	oxide	NOUN
7h149p3108c	5	68	.	.	PUNCT
7h149p3108c	6	1	through	through	ADP
7h149p3108c	6	2	the	the	DET
7h149p3108c	6	3	use	use	NOUN
7h149p3108c	6	4	of	of	ADP
7h149p3108c	6	5	a	a	DET
7h149p3108c	6	6	diffusion	diffusion	NOUN
7h149p3108c	6	7	marker	marker	NOUN
7h149p3108c	6	8	experiment	experiment	NOUN
7h149p3108c	6	9	it	it	PRON
7h149p3108c	6	10	has	have	AUX
7h149p3108c	6	11	been	be	AUX
7h149p3108c	6	12	demonstrated	demonstrate	VERB
7h149p3108c	6	13	that	that	SCONJ
7h149p3108c	6	14	the	the	DET
7h149p3108c	6	15	inward	inward	ADJ
7h149p3108c	6	16	diffusion	diffusion	NOUN
7h149p3108c	6	17	of	of	ADP
7h149p3108c	6	18	oxygen	oxygen	NOUN
7h149p3108c	6	19	dominates	dominate	VERB
7h149p3108c	6	20	the	the	DET
7h149p3108c	6	21	kinetics	kinetic	NOUN
7h149p3108c	6	22	of	of	ADP
7h149p3108c	6	23	oxide	oxide	NOUN
7h149p3108c	6	24	growth	growth	NOUN
7h149p3108c	6	25	.	.	PUNCT
7h149p3108c	7	1	this	this	DET
7h149p3108c	7	2	si	si	PROPN
7h149p3108c	7	3	-	-	PUNCT
7h149p3108c	7	4	like	like	ADJ
7h149p3108c	7	5	diffusion	diffusion	NOUN
7h149p3108c	7	6	mechanism	mechanism	NOUN
7h149p3108c	7	7	is	be	AUX
7h149p3108c	7	8	a	a	DET
7h149p3108c	7	9	critical	critical	ADJ
7h149p3108c	7	10	advantage	advantage	NOUN
7h149p3108c	7	11	,	,	PUNCT
7h149p3108c	7	12	significant	significant	ADJ
7h149p3108c	7	13	because	because	SCONJ
7h149p3108c	7	14	it	it	PRON
7h149p3108c	7	15	can	can	AUX
7h149p3108c	7	16	lead	lead	VERB
7h149p3108c	7	17	to	to	ADP
7h149p3108c	7	18	a	a	DET
7h149p3108c	7	19	cleaner	clean	ADJ
7h149p3108c	7	20	oxide	oxide	NOUN
7h149p3108c	7	21	-	-	PUNCT
7h149p3108c	7	22	semiconductor	semiconductor	NOUN
7h149p3108c	7	23	interface	interface	NOUN
7h149p3108c	7	24	since	since	SCONJ
7h149p3108c	7	25	surface	surface	NOUN
7h149p3108c	7	26	impurities	impurity	NOUN
7h149p3108c	7	27	remain	remain	VERB
7h149p3108c	7	28	on	on	ADP
7h149p3108c	7	29	the	the	DET
7h149p3108c	7	30	outer	outer	ADJ
7h149p3108c	7	31	oxide	oxide	NOUN
7h149p3108c	7	32	surface	surface	NOUN
7h149p3108c	7	33	.	.	PUNCT
7h149p3108c	8	1	gaas	gaas	NOUN
7h149p3108c	8	2	-	-	PUNCT
7h149p3108c	8	3	channel	channel	NOUN
7h149p3108c	8	4	mosfets	mosfet	NOUN
7h149p3108c	8	5	using	use	VERB
7h149p3108c	8	6	inalp	inalp	NOUN
7h149p3108c	8	7	oxide	oxide	NOUN
7h149p3108c	8	8	as	as	SCONJ
7h149p3108c	8	9	the	the	DET
7h149p3108c	8	10	gate	gate	NOUN
7h149p3108c	8	11	dielectric	dielectric	NOUN
7h149p3108c	8	12	have	have	AUX
7h149p3108c	8	13	been	be	AUX
7h149p3108c	8	14	fabricated	fabricate	VERB
7h149p3108c	8	15	and	and	CCONJ
7h149p3108c	8	16	characterized	characterize	VERB
7h149p3108c	8	17	.	.	PUNCT
7h149p3108c	9	1	new	new	ADJ
7h149p3108c	9	2	fabrication	fabrication	NOUN
7h149p3108c	9	3	process	process	NOUN
7h149p3108c	9	4	flows	flow	VERB
7h149p3108c	9	5	for	for	ADP
7h149p3108c	9	6	submicron	submicron	VERB
7h149p3108c	9	7	gate	gate	NOUN
7h149p3108c	9	8	-	-	PUNCT
7h149p3108c	9	9	length	length	NOUN
7h149p3108c	9	10	mosfets	mosfet	NOUN
7h149p3108c	9	11	were	be	AUX
7h149p3108c	9	12	developed	develop	VERB
7h149p3108c	9	13	and	and	CCONJ
7h149p3108c	9	14	demonstrated	demonstrate	VERB
7h149p3108c	9	15	.	.	PUNCT
7h149p3108c	10	1	a	a	DET
7h149p3108c	10	2	non	non	ADJ
7h149p3108c	10	3	-	-	ADJ
7h149p3108c	10	4	self	self	NOUN
7h149p3108c	10	5	-	-	PUNCT
7h149p3108c	10	6	aligned	align	VERB
7h149p3108c	10	7	process	process	NOUN
7h149p3108c	10	8	in	in	ADP
7h149p3108c	10	9	which	which	PRON
7h149p3108c	10	10	the	the	DET
7h149p3108c	10	11	gate	gate	ADJ
7h149p3108c	10	12	electrode	electrode	ADJ
7h149p3108c	10	13	metallization	metallization	NOUN
7h149p3108c	10	14	and	and	CCONJ
7h149p3108c	10	15	gate	gate	NOUN
7h149p3108c	10	16	oxidation	oxidation	NOUN
7h149p3108c	10	17	region	region	NOUN
7h149p3108c	10	18	are	be	AUX
7h149p3108c	10	19	aligned	align	VERB
7h149p3108c	10	20	using	use	VERB
7h149p3108c	10	21	electron	electron	NOUN
7h149p3108c	10	22	-	-	PUNCT
7h149p3108c	10	23	beam	beam	NOUN
7h149p3108c	10	24	lithography	lithography	NOUN
7h149p3108c	10	25	is	be	AUX
7h149p3108c	10	26	demonstrated	demonstrate	VERB
7h149p3108c	10	27	for	for	ADP
7h149p3108c	10	28	sub	sub	ADJ
7h149p3108c	10	29	-	-	ADJ
7h149p3108c	10	30	micron	micron	ADJ
7h149p3108c	10	31	gate	gate	NOUN
7h149p3108c	10	32	lengths	length	NOUN
7h149p3108c	10	33	.	.	PUNCT
7h149p3108c	11	1	an	an	DET
7h149p3108c	11	2	enhanced	enhanced	ADJ
7h149p3108c	11	3	process	process	NOUN
7h149p3108c	11	4	in	in	ADP
7h149p3108c	11	5	which	which	PRON
7h149p3108c	11	6	the	the	DET
7h149p3108c	11	7	gate	gate	NOUN
7h149p3108c	11	8	metallization	metallization	NOUN
7h149p3108c	11	9	and	and	CCONJ
7h149p3108c	11	10	oxidation	oxidation	NOUN
7h149p3108c	11	11	region	region	NOUN
7h149p3108c	11	12	are	be	AUX
7h149p3108c	11	13	self	self	NOUN
7h149p3108c	11	14	-	-	PUNCT
7h149p3108c	11	15	aligned	align	VERB
7h149p3108c	11	16	has	have	AUX
7h149p3108c	11	17	also	also	ADV
7h149p3108c	11	18	been	be	AUX
7h149p3108c	11	19	developed	develop	VERB
7h149p3108c	11	20	and	and	CCONJ
7h149p3108c	11	21	demonstrated	demonstrate	VERB
7h149p3108c	11	22	.	.	PUNCT
7h149p3108c	12	1	these	these	DET
7h149p3108c	12	2	process	process	NOUN
7h149p3108c	12	3	improvements	improvement	NOUN
7h149p3108c	12	4	have	have	AUX
7h149p3108c	12	5	enabled	enable	VERB
7h149p3108c	12	6	significant	significant	ADJ
7h149p3108c	12	7	improvements	improvement	NOUN
7h149p3108c	12	8	in	in	ADP
7h149p3108c	12	9	device	device	NOUN
7h149p3108c	12	10	performance	performance	NOUN
7h149p3108c	12	11	over	over	ADP
7h149p3108c	12	12	previous	previous	ADJ
7h149p3108c	12	13	reports	report	NOUN
7h149p3108c	12	14	.	.	PUNCT
7h149p3108c	13	1	a	a	DET
7h149p3108c	13	2	record	record	NOUN
7h149p3108c	13	3	peak	peak	NOUN
7h149p3108c	13	4	extrinsic	extrinsic	ADJ
7h149p3108c	13	5	transconductance	transconductance	NOUN
7h149p3108c	13	6	of	of	ADP
7h149p3108c	13	7	144	144	NUM
7h149p3108c	13	8	ms	ms	PROPN
7h149p3108c	13	9	/	/	SYM
7h149p3108c	13	10	mm	mm	PROPN
7h149p3108c	13	11	and	and	CCONJ
7h149p3108c	13	12	a	a	DET
7h149p3108c	13	13	record	record	NOUN
7h149p3108c	13	14	cutoff	cutoff	NOUN
7h149p3108c	13	15	frequency	frequency	NOUN
7h149p3108c	13	16	,	,	PUNCT
7h149p3108c	13	17	ft	ft	PROPN
7h149p3108c	13	18	,	,	PUNCT
7h149p3108c	13	19	of	of	ADP
7h149p3108c	13	20	31	31	NUM
7h149p3108c	13	21	ghz	ghz	NOUN
7h149p3108c	13	22	for	for	ADP
7h149p3108c	13	23	a	a	DET
7h149p3108c	13	24	gaas	gaas	NOUN
7h149p3108c	13	25	-	-	PUNCT
7h149p3108c	13	26	channel	channel	NOUN
7h149p3108c	13	27	mosfet	mosfet	NOUN
7h149p3108c	13	28	has	have	AUX
7h149p3108c	13	29	been	be	AUX
7h149p3108c	13	30	measured	measure	VERB
7h149p3108c	13	31	on	on	ADP
7h149p3108c	13	32	self	self	NOUN
7h149p3108c	13	33	-	-	PUNCT
7h149p3108c	13	34	aligned	align	VERB
7h149p3108c	13	35	mosfets	mosfet	NOUN
7h149p3108c	13	36	with	with	ADP
7h149p3108c	13	37	0.25	0.25	NUM
7h149p3108c	13	38	åµm	åµm	PROPN
7h149p3108c	13	39	gate	gate	PROPN
7h149p3108c	13	40	length	length	NOUN
7h149p3108c	13	41	.	.	PUNCT