id	sid	tid	token	lemma	pos
79407w65h0b	1	1	the	the	DET
79407w65h0b	1	2	power	power	NOUN
79407w65h0b	1	3	constrained	constrain	VERB
79407w65h0b	1	4	scaling	scaling	NOUN
79407w65h0b	1	5	of	of	ADP
79407w65h0b	1	6	conventional	conventional	ADJ
79407w65h0b	1	7	silicon	silicon	NOUN
79407w65h0b	1	8	metal	metal	NOUN
79407w65h0b	1	9	-	-	PUNCT
79407w65h0b	1	10	oxide	oxide	NOUN
79407w65h0b	1	11	-	-	PUNCT
79407w65h0b	1	12	semiconductor	semiconductor	NOUN
79407w65h0b	1	13	field	field	NOUN
79407w65h0b	1	14	effect	effect	NOUN
79407w65h0b	1	15	transistors	transistor	NOUN
79407w65h0b	1	16	(	(	PUNCT
79407w65h0b	1	17	mosfets	mosfet	NOUN
79407w65h0b	1	18	)	)	PUNCT
79407w65h0b	1	19	below	below	ADP
79407w65h0b	1	20	the	the	DET
79407w65h0b	1	21	90	90	NUM
79407w65h0b	1	22	nm	nm	NOUN
79407w65h0b	1	23	technology	technology	NOUN
79407w65h0b	1	24	node	node	NOUN
79407w65h0b	1	25	has	have	AUX
79407w65h0b	1	26	led	lead	VERB
79407w65h0b	1	27	to	to	ADP
79407w65h0b	1	28	innovations	innovation	NOUN
79407w65h0b	1	29	such	such	ADJ
79407w65h0b	1	30	as	as	ADP
79407w65h0b	1	31	strained	strain	VERB
79407w65h0b	1	32	-	-	PUNCT
79407w65h0b	1	33	si	si	PROPN
79407w65h0b	1	34	,	,	PUNCT
79407w65h0b	1	35	strained	strain	VERB
79407w65h0b	1	36	sige	sige	PROPN
79407w65h0b	1	37	,	,	PUNCT
79407w65h0b	1	38	high	high	ADJ
79407w65h0b	1	39	-	-	PUNCT
79407w65h0b	1	40	k	k	NOUN
79407w65h0b	1	41	/	/	SYM
79407w65h0b	1	42	metal	metal	NOUN
79407w65h0b	1	43	gate	gate	NOUN
79407w65h0b	1	44	,	,	PUNCT
79407w65h0b	1	45	finfet	finfet	NOUN
79407w65h0b	1	46	,	,	PUNCT
79407w65h0b	1	47	as	as	ADV
79407w65h0b	1	48	well	well	ADV
79407w65h0b	1	49	as	as	ADP
79407w65h0b	1	50	mitigation	mitigation	NOUN
79407w65h0b	1	51	of	of	ADP
79407w65h0b	1	52	parasitic	parasitic	ADJ
79407w65h0b	1	53	elements	element	NOUN
79407w65h0b	1	54	to	to	PART
79407w65h0b	1	55	enable	enable	VERB
79407w65h0b	1	56	improvement	improvement	NOUN
79407w65h0b	1	57	in	in	ADP
79407w65h0b	1	58	device	device	NOUN
79407w65h0b	1	59	performance	performance	NOUN
79407w65h0b	1	60	and	and	CCONJ
79407w65h0b	1	61	lowering	lowering	NOUN
79407w65h0b	1	62	of	of	ADP
79407w65h0b	1	63	cost	cost	NOUN
79407w65h0b	1	64	-	-	PUNCT
79407w65h0b	1	65	per	per	ADP
79407w65h0b	1	66	-	-	PUNCT
79407w65h0b	1	67	function	function	NOUN
79407w65h0b	1	68	of	of	ADP
79407w65h0b	1	69	integrated	integrated	ADJ
79407w65h0b	1	70	circuits	circuit	NOUN
79407w65h0b	1	71	.	.	PUNCT
79407w65h0b	2	1	higher	high	ADJ
79407w65h0b	2	2	mobility	mobility	NOUN
79407w65h0b	2	3	channel	channel	NOUN
79407w65h0b	2	4	materials	material	NOUN
79407w65h0b	2	5	for	for	ADP
79407w65h0b	2	6	n	n	NOUN
79407w65h0b	2	7	and	and	CCONJ
79407w65h0b	2	8	p	p	PROPN
79407w65h0b	2	9	channel	channel	NOUN
79407w65h0b	2	10	transistors	transistor	NOUN
79407w65h0b	2	11	,	,	PUNCT
79407w65h0b	2	12	channel	channel	NOUN
79407w65h0b	2	13	architecture	architecture	NOUN
79407w65h0b	2	14	innovation	innovation	NOUN
79407w65h0b	2	15	and	and	CCONJ
79407w65h0b	2	16	mitigation	mitigation	NOUN
79407w65h0b	2	17	of	of	ADP
79407w65h0b	2	18	device	device	NOUN
79407w65h0b	2	19	-	-	PUNCT
79407w65h0b	2	20	to	to	ADP
79407w65h0b	2	21	-	-	PUNCT
79407w65h0b	2	22	device	device	NOUN
79407w65h0b	2	23	variation	variation	NOUN
79407w65h0b	2	24	are	be	AUX
79407w65h0b	2	25	focus	focus	NOUN
79407w65h0b	2	26	of	of	ADP
79407w65h0b	2	27	current	current	ADJ
79407w65h0b	2	28	research	research	NOUN
79407w65h0b	2	29	to	to	PART
79407w65h0b	2	30	further	far	ADV
79407w65h0b	2	31	boost	boost	VERB
79407w65h0b	2	32	transistor	transistor	NOUN
79407w65h0b	2	33	performance	performance	NOUN
79407w65h0b	2	34	at	at	ADP
79407w65h0b	2	35	scaled	scale	VERB
79407w65h0b	2	36	technology	technology	NOUN
79407w65h0b	2	37	nodes.this	nodes.this	DET
79407w65h0b	2	38	dissertation	dissertation	NOUN
79407w65h0b	2	39	focuses	focus	VERB
79407w65h0b	2	40	on	on	ADP
79407w65h0b	2	41	three	three	NUM
79407w65h0b	2	42	key	key	ADJ
79407w65h0b	2	43	aspects	aspect	NOUN
79407w65h0b	2	44	of	of	ADP
79407w65h0b	2	45	enhancing	enhance	VERB
79407w65h0b	2	46	transistor	transistor	NOUN
79407w65h0b	2	47	performance	performance	NOUN
79407w65h0b	2	48	,	,	PUNCT
79407w65h0b	2	49	mitigating	mitigate	VERB
79407w65h0b	2	50	variation	variation	NOUN
79407w65h0b	2	51	,	,	PUNCT
79407w65h0b	2	52	and	and	CCONJ
79407w65h0b	2	53	improving	improve	VERB
79407w65h0b	2	54	reliability	reliability	NOUN
79407w65h0b	2	55	in	in	ADP
79407w65h0b	2	56	cmos	cmos	NOUN
79407w65h0b	2	57	transistors	transistor	NOUN
79407w65h0b	2	58	.	.	PUNCT
79407w65h0b	3	1	in	in	ADP
79407w65h0b	3	2	the	the	DET
79407w65h0b	3	3	first	first	ADJ
79407w65h0b	3	4	section	section	NOUN
79407w65h0b	3	5	,	,	PUNCT
79407w65h0b	3	6	we	we	PRON
79407w65h0b	3	7	evaluate	evaluate	VERB
79407w65h0b	3	8	and	and	CCONJ
79407w65h0b	3	9	benchmark	benchmark	PROPN
79407w65h0b	3	10	gate	gate	NOUN
79407w65h0b	3	11	-	-	PUNCT
79407w65h0b	3	12	all	all	PRON
79407w65h0b	3	13	-	-	PUNCT
79407w65h0b	3	14	around	around	ADP
79407w65h0b	3	15	nanowire	nanowire	NOUN
79407w65h0b	3	16	fets	fet	NOUN
79407w65h0b	3	17	(	(	PUNCT
79407w65h0b	3	18	gaa	gaa	PROPN
79407w65h0b	3	19	-	-	PUNCT
79407w65h0b	3	20	nw	nw	PROPN
79407w65h0b	3	21	)	)	PUNCT
79407w65h0b	3	22	vs	vs	ADP
79407w65h0b	3	23	current	current	ADJ
79407w65h0b	3	24	finfet	finfet	ADJ
79407w65h0b	3	25	architecture	architecture	NOUN
79407w65h0b	3	26	for	for	ADP
79407w65h0b	3	27	5	5	NUM
79407w65h0b	3	28	nm	nm	PROPN
79407w65h0b	3	29	technology	technology	NOUN
79407w65h0b	3	30	node	node	NOUN
79407w65h0b	3	31	via	via	ADP
79407w65h0b	3	32	tcad	tcad	PROPN
79407w65h0b	3	33	finite	finite	NOUN
79407w65h0b	3	34	element	element	NOUN
79407w65h0b	3	35	simulation	simulation	NOUN
79407w65h0b	3	36	and	and	CCONJ
79407w65h0b	3	37	circuit	circuit	NOUN
79407w65h0b	3	38	level	level	NOUN
79407w65h0b	3	39	analysis	analysis	NOUN
79407w65h0b	3	40	.	.	PUNCT
79407w65h0b	4	1	the	the	DET
79407w65h0b	4	2	concept	concept	NOUN
79407w65h0b	4	3	of	of	ADP
79407w65h0b	4	4	electrically	electrically	ADV
79407w65h0b	4	5	gate	gate	NOUN
79407w65h0b	4	6	-	-	PUNCT
79407w65h0b	4	7	all	all	PRON
79407w65h0b	4	8	-	-	PUNCT
79407w65h0b	4	9	around	around	ADP
79407w65h0b	4	10	hexagonal	hexagonal	ADJ
79407w65h0b	4	11	nanowire	nanowire	NOUN
79407w65h0b	4	12	fet	fet	PROPN
79407w65h0b	4	13	(	(	PUNCT
79407w65h0b	4	14	hexfet	hexfet	NOUN
79407w65h0b	4	15	)	)	PUNCT
79407w65h0b	4	16	is	be	AUX
79407w65h0b	4	17	introduced	introduce	VERB
79407w65h0b	4	18	to	to	PART
79407w65h0b	4	19	show	show	VERB
79407w65h0b	4	20	that	that	SCONJ
79407w65h0b	4	21	this	this	DET
79407w65h0b	4	22	channel	channel	NOUN
79407w65h0b	4	23	architecture	architecture	NOUN
79407w65h0b	4	24	can	can	AUX
79407w65h0b	4	25	provide	provide	VERB
79407w65h0b	4	26	electrostatic	electrostatic	ADJ
79407w65h0b	4	27	robustness	robustness	NOUN
79407w65h0b	4	28	similar	similar	ADJ
79407w65h0b	4	29	to	to	ADP
79407w65h0b	4	30	gaa	gaa	PROPN
79407w65h0b	4	31	-	-	PUNCT
79407w65h0b	4	32	nw	nw	PROPN
79407w65h0b	4	33	,	,	PUNCT
79407w65h0b	4	34	in	in	ADP
79407w65h0b	4	35	conjunction	conjunction	NOUN
79407w65h0b	4	36	with	with	ADP
79407w65h0b	4	37	the	the	DET
79407w65h0b	4	38	high	high	ADJ
79407w65h0b	4	39	current	current	ADJ
79407w65h0b	4	40	drive	drive	NOUN
79407w65h0b	4	41	current	current	ADJ
79407w65h0b	4	42	capabilityof	capabilityof	ADJ
79407w65h0b	4	43	finfet	finfet	NOUN
79407w65h0b	4	44	.	.	PUNCT
79407w65h0b	5	1	short	short	ADJ
79407w65h0b	5	2	channel	channel	NOUN
79407w65h0b	5	3	experimental	experimental	ADJ
79407w65h0b	5	4	device	device	NOUN
79407w65h0b	5	5	results	result	NOUN
79407w65h0b	5	6	are	be	AUX
79407w65h0b	5	7	in	in	ADP
79407w65h0b	5	8	alignment	alignment	NOUN
79407w65h0b	5	9	with	with	ADP
79407w65h0b	5	10	tcad	tcad	NOUN
79407w65h0b	5	11	simulations.in	simulations.in	X
79407w65h0b	5	12	the	the	DET
79407w65h0b	5	13	second	second	ADJ
79407w65h0b	5	14	section	section	NOUN
79407w65h0b	5	15	,	,	PUNCT
79407w65h0b	5	16	we	we	PRON
79407w65h0b	5	17	focus	focus	VERB
79407w65h0b	5	18	on	on	ADP
79407w65h0b	5	19	higher	high	ADJ
79407w65h0b	5	20	mobility	mobility	NOUN
79407w65h0b	5	21	compound	compound	NOUN
79407w65h0b	5	22	semiconductor	semiconductor	NOUN
79407w65h0b	5	23	(	(	PUNCT
79407w65h0b	5	24	iii	iii	NUM
79407w65h0b	5	25	-	-	PUNCT
79407w65h0b	5	26	v	v	NOUN
79407w65h0b	5	27	group	group	NOUN
79407w65h0b	5	28	materials	material	NOUN
79407w65h0b	5	29	)	)	PUNCT
79407w65h0b	5	30	belonging	belong	VERB
79407w65h0b	5	31	tothe	tothe	ADJ
79407w65h0b	5	32	inxga­1	inxga­1	PROPN
79407w65h0b	5	33	-	-	PUNCT
79407w65h0b	5	34	xas	xas	PROPN
79407w65h0b	5	35	family	family	NOUN
79407w65h0b	5	36	as	as	ADP
79407w65h0b	5	37	a	a	DET
79407w65h0b	5	38	potential	potential	ADJ
79407w65h0b	5	39	channel	channel	NOUN
79407w65h0b	5	40	material	material	NOUN
79407w65h0b	5	41	for	for	ADP
79407w65h0b	5	42	high	high	ADJ
79407w65h0b	5	43	performance	performance	NOUN
79407w65h0b	5	44	n	n	VERB
79407w65h0b	5	45	-	-	PUNCT
79407w65h0b	5	46	channel	channel	NOUN
79407w65h0b	5	47	transistors	transistor	NOUN
79407w65h0b	5	48	.	.	PUNCT
79407w65h0b	6	1	weextend	weextend	VERB
79407w65h0b	6	2	the	the	DET
79407w65h0b	6	3	hexfet	hexfet	NOUN
79407w65h0b	6	4	concept	concept	NOUN
79407w65h0b	6	5	to	to	ADP
79407w65h0b	6	6	iii	iii	NUM
79407w65h0b	6	7	-	-	PUNCT
79407w65h0b	6	8	v	v	NOUN
79407w65h0b	6	9	finfet	finfet	NOUN
79407w65h0b	6	10	architecture	architecture	NOUN
79407w65h0b	6	11	and	and	CCONJ
79407w65h0b	6	12	show	show	VERB
79407w65h0b	6	13	via	via	ADP
79407w65h0b	6	14	tcad	tcad	PROPN
79407w65h0b	6	15	simulation	simulation	NOUN
79407w65h0b	6	16	that	that	SCONJ
79407w65h0b	6	17	high	high	ADJ
79407w65h0b	6	18	mobility	mobility	NOUN
79407w65h0b	6	19	quantum	quantum	NOUN
79407w65h0b	6	20	well	well	INTJ
79407w65h0b	6	21	inxga­1	inxga­1	PROPN
79407w65h0b	6	22	-	-	PUNCT
79407w65h0b	6	23	xas	xas	PROPN
79407w65h0b	6	24	fets	fet	NOUN
79407w65h0b	6	25	can	can	AUX
79407w65h0b	6	26	outperform	outperform	VERB
79407w65h0b	6	27	silicon	silicon	NOUN
79407w65h0b	6	28	mosfetsat	mosfetsat	PROPN
79407w65h0b	6	29	the	the	DET
79407w65h0b	6	30	same	same	ADJ
79407w65h0b	6	31	technology	technology	NOUN
79407w65h0b	6	32	node	node	NOUN
79407w65h0b	6	33	..	..	PUNCT
79407w65h0b	6	34	the	the	DET
79407w65h0b	6	35	third	third	ADJ
79407w65h0b	6	36	section	section	NOUN
79407w65h0b	6	37	of	of	ADP
79407w65h0b	6	38	this	this	DET
79407w65h0b	6	39	thesis	thesis	NOUN
79407w65h0b	6	40	evaluates	evaluate	VERB
79407w65h0b	6	41	oxygen	oxygen	NOUN
79407w65h0b	6	42	-	-	PUNCT
79407w65h0b	6	43	inserted	insert	VERB
79407w65h0b	6	44	silicon	silicon	NOUN
79407w65h0b	6	45	(	(	PUNCT
79407w65h0b	6	46	oi	oi	NOUN
79407w65h0b	6	47	-	-	PUNCT
79407w65h0b	6	48	silicon	silicon	NOUN
79407w65h0b	6	49	)	)	PUNCT
79407w65h0b	6	50	channel	channel	NOUN
79407w65h0b	6	51	mosfetsto	mosfetsto	NOUN
79407w65h0b	6	52	provide	provide	VERB
79407w65h0b	6	53	a	a	DET
79407w65h0b	6	54	cost	cost	NOUN
79407w65h0b	6	55	-	-	PUNCT
79407w65h0b	6	56	effective	effective	ADJ
79407w65h0b	6	57	means	mean	NOUN
79407w65h0b	6	58	for	for	ADP
79407w65h0b	6	59	mobility	mobility	NOUN
79407w65h0b	6	60	improvement	improvement	NOUN
79407w65h0b	6	61	,	,	PUNCT
79407w65h0b	6	62	gate	gate	ADJ
79407w65h0b	6	63	leakage	leakage	NOUN
79407w65h0b	6	64	reduction	reduction	NOUN
79407w65h0b	6	65	,	,	PUNCT
79407w65h0b	6	66	threshold	threshold	ADJ
79407w65h0b	6	67	voltage	voltage	NOUN
79407w65h0b	6	68	variation	variation	NOUN
79407w65h0b	6	69	reduction	reduction	NOUN
79407w65h0b	6	70	and	and	CCONJ
79407w65h0b	6	71	positive	positive	ADJ
79407w65h0b	6	72	-	-	PUNCT
79407w65h0b	6	73	temperature	temperature	NOUN
79407w65h0b	6	74	-	-	PUNCT
79407w65h0b	6	75	bias	bias	NOUN
79407w65h0b	6	76	-	-	PUNCT
79407w65h0b	6	77	instability	instability	NOUN
79407w65h0b	6	78	reliability	reliability	NOUN
79407w65h0b	6	79	improvement	improvement	NOUN
79407w65h0b	6	80	.	.	PUNCT
79407w65h0b	7	1	oi	oi	INTJ
79407w65h0b	7	2	silicon	silicon	NOUN
79407w65h0b	7	3	is	be	AUX
79407w65h0b	7	4	evaluated	evaluate	VERB
79407w65h0b	7	5	using	use	VERB
79407w65h0b	7	6	poly	poly	NOUN
79407w65h0b	7	7	/	/	SYM
79407w65h0b	7	8	sio2	sio2	NOUN
79407w65h0b	7	9	as	as	ADV
79407w65h0b	7	10	well	well	ADV
79407w65h0b	7	11	as	as	ADP
79407w65h0b	7	12	hfo2	hfo2	PROPN
79407w65h0b	7	13	based	base	VERB
79407w65h0b	7	14	high	high	ADJ
79407w65h0b	7	15	-	-	PUNCT
79407w65h0b	7	16	k	k	NOUN
79407w65h0b	7	17	/	/	SYM
79407w65h0b	7	18	metal	metal	NOUN
79407w65h0b	7	19	gate	gate	NOUN
79407w65h0b	7	20	stack	stack	PROPN
79407w65h0b	7	21	,	,	PUNCT
79407w65h0b	7	22	where	where	SCONJ
79407w65h0b	7	23	we	we	PRON
79407w65h0b	7	24	observe	observe	VERB
79407w65h0b	7	25	mobility	mobility	NOUN
79407w65h0b	7	26	improvement	improvement	NOUN
79407w65h0b	7	27	,	,	PUNCT
79407w65h0b	7	28	gate	gate	ADJ
79407w65h0b	7	29	leakage	leakage	NOUN
79407w65h0b	7	30	reduction	reduction	NOUN
79407w65h0b	7	31	and	and	CCONJ
79407w65h0b	7	32	improved	improved	ADJ
79407w65h0b	7	33	threshold	threshold	NOUN
79407w65h0b	7	34	voltage	voltage	NOUN
79407w65h0b	7	35	variation.the	variation.the	DET
79407w65h0b	7	36	dissertation	dissertation	NOUN
79407w65h0b	7	37	concludes	conclude	VERB
79407w65h0b	7	38	with	with	ADP
79407w65h0b	7	39	a	a	DET
79407w65h0b	7	40	brief	brief	ADJ
79407w65h0b	7	41	summary	summary	NOUN
79407w65h0b	7	42	and	and	CCONJ
79407w65h0b	7	43	a	a	DET
79407w65h0b	7	44	discussion	discussion	NOUN
79407w65h0b	7	45	of	of	ADP
79407w65h0b	7	46	future	future	ADJ
79407w65h0b	7	47	work	work	NOUN
79407w65h0b	7	48	to	to	PART
79407w65h0b	7	49	further	far	ADV
79407w65h0b	7	50	evaluate	evaluate	VERB
79407w65h0b	7	51	the	the	DET
79407w65h0b	7	52	device	device	NOUN
79407w65h0b	7	53	concepts	concept	NOUN
79407w65h0b	7	54	portrayed	portray	VERB
79407w65h0b	7	55	in	in	ADP
79407w65h0b	7	56	this	this	DET
79407w65h0b	7	57	work	work	NOUN
79407w65h0b	7	58	.	.	PUNCT