id	sid	tid	token	lemma	pos
6w924b3193s	1	1	in	in	ADP
6w924b3193s	1	2	this	this	DET
6w924b3193s	1	3	study	study	NOUN
6w924b3193s	1	4	,	,	PUNCT
6w924b3193s	1	5	piezoflexure	piezoflexure	NOUN
6w924b3193s	1	6	-	-	PUNCT
6w924b3193s	1	7	enabled	enable	VERB
6w924b3193s	1	8	nanofabrication	nanofabrication	NOUN
6w924b3193s	1	9	(	(	PUNCT
6w924b3193s	1	10	pen	pen	NOUN
6w924b3193s	1	11	)	)	PUNCT
6w924b3193s	1	12	,	,	PUNCT
6w924b3193s	1	13	a	a	DET
6w924b3193s	1	14	new	new	ADJ
6w924b3193s	1	15	technique	technique	NOUN
6w924b3193s	1	16	for	for	ADP
6w924b3193s	1	17	forming	form	VERB
6w924b3193s	1	18	nanometer	nanometer	NOUN
6w924b3193s	1	19	-	-	PUNCT
6w924b3193s	1	20	scale	scale	NOUN
6w924b3193s	1	21	features	feature	NOUN
6w924b3193s	1	22	based	base	VERB
6w924b3193s	1	23	on	on	ADP
6w924b3193s	1	24	the	the	DET
6w924b3193s	1	25	combination	combination	NOUN
6w924b3193s	1	26	of	of	ADP
6w924b3193s	1	27	dynamic	dynamic	ADJ
6w924b3193s	1	28	stencil	stencil	NOUN
6w924b3193s	1	29	lithography	lithography	NOUN
6w924b3193s	1	30	and	and	CCONJ
6w924b3193s	1	31	lift	lift	NOUN
6w924b3193s	1	32	-	-	PUNCT
6w924b3193s	1	33	off	off	ADP
6w924b3193s	1	34	processing	processing	NOUN
6w924b3193s	1	35	is	be	AUX
6w924b3193s	1	36	analyzed	analyze	VERB
6w924b3193s	1	37	,	,	PUNCT
6w924b3193s	1	38	investigated	investigate	VERB
6w924b3193s	1	39	,	,	PUNCT
6w924b3193s	1	40	and	and	CCONJ
6w924b3193s	1	41	demonstrated	demonstrate	VERB
6w924b3193s	1	42	.	.	PUNCT
6w924b3193s	2	1	in	in	ADP
6w924b3193s	2	2	the	the	DET
6w924b3193s	2	3	pen	pen	NOUN
6w924b3193s	2	4	approach	approach	NOUN
6w924b3193s	2	5	,	,	PUNCT
6w924b3193s	2	6	a	a	DET
6w924b3193s	2	7	deposition	deposition	NOUN
6w924b3193s	2	8	substrate	substrate	NOUN
6w924b3193s	2	9	is	be	AUX
6w924b3193s	2	10	translated	translate	VERB
6w924b3193s	2	11	under	under	ADP
6w924b3193s	2	12	a	a	DET
6w924b3193s	2	13	stencil	stencil	NOUN
6w924b3193s	2	14	mask	mask	NOUN
6w924b3193s	2	15	in	in	ADP
6w924b3193s	2	16	an	an	DET
6w924b3193s	2	17	electron	electron	NOUN
6w924b3193s	2	18	-	-	PUNCT
6w924b3193s	2	19	beam	beam	NOUN
6w924b3193s	2	20	evaporator	evaporator	NOUN
6w924b3193s	2	21	between	between	ADP
6w924b3193s	2	22	depositions	deposition	NOUN
6w924b3193s	2	23	of	of	ADP
6w924b3193s	2	24	dissimilar	dissimilar	ADJ
6w924b3193s	2	25	materials	material	NOUN
6w924b3193s	2	26	.	.	PUNCT
6w924b3193s	3	1	the	the	DET
6w924b3193s	3	2	piezoelectric	piezoelectric	ADJ
6w924b3193s	3	3	translation	translation	NOUN
6w924b3193s	3	4	defines	define	VERB
6w924b3193s	3	5	the	the	DET
6w924b3193s	3	6	interembedded	interembedde	VERB
6w924b3193s	3	7	features	feature	NOUN
6w924b3193s	3	8	that	that	PRON
6w924b3193s	3	9	are	be	AUX
6w924b3193s	3	10	later	later	ADV
6w924b3193s	3	11	differentially	differentially	ADV
6w924b3193s	3	12	etched	etch	VERB
6w924b3193s	3	13	to	to	PART
6w924b3193s	3	14	reveal	reveal	VERB
6w924b3193s	3	15	the	the	DET
6w924b3193s	3	16	desired	desire	VERB
6w924b3193s	3	17	patterns	pattern	NOUN
6w924b3193s	3	18	.	.	PUNCT
6w924b3193s	4	1	this	this	DET
6w924b3193s	4	2	technique	technique	NOUN
6w924b3193s	4	3	is	be	AUX
6w924b3193s	4	4	inherently	inherently	ADV
6w924b3193s	4	5	clean	clean	ADJ
6w924b3193s	4	6	,	,	PUNCT
6w924b3193s	4	7	without	without	ADP
6w924b3193s	4	8	resists	resist	NOUN
6w924b3193s	4	9	,	,	PUNCT
6w924b3193s	4	10	organics	organic	NOUN
6w924b3193s	4	11	,	,	PUNCT
6w924b3193s	4	12	and	and	CCONJ
6w924b3193s	4	13	bakes	bake	NOUN
6w924b3193s	4	14	.	.	PUNCT
6w924b3193s	5	1	the	the	DET
6w924b3193s	5	2	masks	mask	NOUN
6w924b3193s	5	3	are	be	AUX
6w924b3193s	5	4	reconfigurable	reconfigurable	NOUN
6w924b3193s	5	5	,	,	PUNCT
6w924b3193s	5	6	since	since	SCONJ
6w924b3193s	5	7	a	a	DET
6w924b3193s	5	8	single	single	ADJ
6w924b3193s	5	9	rectangular	rectangular	ADJ
6w924b3193s	5	10	aperture	aperture	NOUN
6w924b3193s	5	11	mask	mask	NOUN
6w924b3193s	5	12	can	can	AUX
6w924b3193s	5	13	be	be	AUX
6w924b3193s	5	14	used	use	VERB
6w924b3193s	5	15	to	to	PART
6w924b3193s	5	16	batch	batch	VERB
6w924b3193s	5	17	fabricate	fabricate	VERB
6w924b3193s	5	18	a	a	DET
6w924b3193s	5	19	wide	wide	ADJ
6w924b3193s	5	20	array	array	NOUN
6w924b3193s	5	21	of	of	ADP
6w924b3193s	5	22	device	device	NOUN
6w924b3193s	5	23	structures	structure	NOUN
6w924b3193s	5	24	in	in	ADP
6w924b3193s	5	25	a	a	DET
6w924b3193s	5	26	single	single	ADJ
6w924b3193s	5	27	pump	pump	NOUN
6w924b3193s	5	28	-	-	PUNCT
6w924b3193s	5	29	down	down	ADP
6w924b3193s	5	30	cycle	cycle	NOUN
6w924b3193s	5	31	of	of	ADP
6w924b3193s	5	32	the	the	DET
6w924b3193s	5	33	evaporator	evaporator	NOUN
6w924b3193s	5	34	.	.	PUNCT
6w924b3193s	6	1	as	as	ADP
6w924b3193s	6	2	a	a	DET
6w924b3193s	6	3	first	first	ADJ
6w924b3193s	6	4	part	part	NOUN
6w924b3193s	6	5	of	of	ADP
6w924b3193s	6	6	this	this	DET
6w924b3193s	6	7	project	project	NOUN
6w924b3193s	6	8	,	,	PUNCT
6w924b3193s	6	9	the	the	DET
6w924b3193s	6	10	pen	pen	NOUN
6w924b3193s	6	11	system	system	NOUN
6w924b3193s	6	12	was	be	AUX
6w924b3193s	6	13	designed	design	VERB
6w924b3193s	6	14	and	and	CCONJ
6w924b3193s	6	15	constructed	construct	VERB
6w924b3193s	6	16	.	.	PUNCT
6w924b3193s	7	1	a	a	DET
6w924b3193s	7	2	stencil	stencil	NOUN
6w924b3193s	7	3	mask	mask	NOUN
6w924b3193s	7	4	fabrication	fabrication	NOUN
6w924b3193s	7	5	technique	technique	NOUN
6w924b3193s	7	6	based	base	VERB
6w924b3193s	7	7	on	on	ADP
6w924b3193s	7	8	anisotropic	anisotropic	NOUN
6w924b3193s	7	9	etching	etching	NOUN
6w924b3193s	7	10	of	of	ADP
6w924b3193s	7	11	silicon	silicon	NOUN
6w924b3193s	7	12	was	be	AUX
6w924b3193s	7	13	developed	develop	VERB
6w924b3193s	7	14	and	and	CCONJ
6w924b3193s	7	15	square	square	ADJ
6w924b3193s	7	16	apertures	aperture	NOUN
6w924b3193s	7	17	as	as	ADV
6w924b3193s	7	18	small	small	ADJ
6w924b3193s	7	19	as	as	ADP
6w924b3193s	7	20	1	1	NUM
6w924b3193s	7	21	micron	micron	NOUN
6w924b3193s	7	22	on	on	ADP
6w924b3193s	7	23	a	a	DET
6w924b3193s	7	24	side	side	NOUN
6w924b3193s	7	25	with	with	ADP
6w924b3193s	7	26	edge	edge	NOUN
6w924b3193s	7	27	uniformity	uniformity	NOUN
6w924b3193s	7	28	on	on	ADP
6w924b3193s	7	29	the	the	DET
6w924b3193s	7	30	order	order	NOUN
6w924b3193s	7	31	of	of	ADP
6w924b3193s	7	32	10	10	NUM
6w924b3193s	7	33	nanometers	nanometer	NOUN
6w924b3193s	7	34	were	be	AUX
6w924b3193s	7	35	demonstrated	demonstrate	VERB
6w924b3193s	7	36	.	.	PUNCT
6w924b3193s	8	1	several	several	ADJ
6w924b3193s	8	2	process	process	NOUN
6w924b3193s	8	3	attributes	attribute	VERB
6w924b3193s	8	4	such	such	ADJ
6w924b3193s	8	5	as	as	ADP
6w924b3193s	8	6	geometrical	geometrical	ADJ
6w924b3193s	8	7	edge	edge	NOUN
6w924b3193s	8	8	taper	taper	NOUN
6w924b3193s	8	9	,	,	PUNCT
6w924b3193s	8	10	mask	mask	NOUN
6w924b3193s	8	11	clogging	clogging	NOUN
6w924b3193s	8	12	,	,	PUNCT
6w924b3193s	8	13	thermal	thermal	ADJ
6w924b3193s	8	14	expansion	expansion	NOUN
6w924b3193s	8	15	due	due	ADP
6w924b3193s	8	16	to	to	ADP
6w924b3193s	8	17	radiative	radiative	ADJ
6w924b3193s	8	18	heat	heat	NOUN
6w924b3193s	8	19	,	,	PUNCT
6w924b3193s	8	20	and	and	CCONJ
6w924b3193s	8	21	lateral	lateral	ADJ
6w924b3193s	8	22	material	material	NOUN
6w924b3193s	8	23	diffusion	diffusion	NOUN
6w924b3193s	8	24	during	during	ADP
6w924b3193s	8	25	deposition	deposition	NOUN
6w924b3193s	8	26	have	have	AUX
6w924b3193s	8	27	been	be	AUX
6w924b3193s	8	28	identified	identify	VERB
6w924b3193s	8	29	and	and	CCONJ
6w924b3193s	8	30	characterized	characterize	VERB
6w924b3193s	8	31	.	.	PUNCT
6w924b3193s	9	1	the	the	DET
6w924b3193s	9	2	lateral	lateral	ADJ
6w924b3193s	9	3	spread	spread	NOUN
6w924b3193s	9	4	of	of	ADP
6w924b3193s	9	5	materials	material	NOUN
6w924b3193s	9	6	has	have	AUX
6w924b3193s	9	7	been	be	AUX
6w924b3193s	9	8	investigated	investigate	VERB
6w924b3193s	9	9	in	in	ADP
6w924b3193s	9	10	a	a	DET
6w924b3193s	9	11	series	series	NOUN
6w924b3193s	9	12	of	of	ADP
6w924b3193s	9	13	experimental	experimental	ADJ
6w924b3193s	9	14	matrices	matrix	NOUN
6w924b3193s	9	15	enabled	enable	VERB
6w924b3193s	9	16	by	by	ADP
6w924b3193s	9	17	the	the	DET
6w924b3193s	9	18	ability	ability	NOUN
6w924b3193s	9	19	of	of	ADP
6w924b3193s	9	20	the	the	DET
6w924b3193s	9	21	pen	pen	NOUN
6w924b3193s	9	22	system	system	NOUN
6w924b3193s	9	23	to	to	PART
6w924b3193s	9	24	perform	perform	VERB
6w924b3193s	9	25	multiple	multiple	ADJ
6w924b3193s	9	26	independent	independent	ADJ
6w924b3193s	9	27	evaporations	evaporation	NOUN
6w924b3193s	9	28	in	in	ADP
6w924b3193s	9	29	the	the	DET
6w924b3193s	9	30	same	same	ADJ
6w924b3193s	9	31	run	run	NOUN
6w924b3193s	9	32	.	.	PUNCT
6w924b3193s	10	1	the	the	DET
6w924b3193s	10	2	lateral	lateral	ADJ
6w924b3193s	10	3	diffusions	diffusion	NOUN
6w924b3193s	10	4	were	be	AUX
6w924b3193s	10	5	characterized	characterize	VERB
6w924b3193s	10	6	by	by	ADP
6w924b3193s	10	7	atomic	atomic	ADJ
6w924b3193s	10	8	force	force	NOUN
6w924b3193s	10	9	and	and	CCONJ
6w924b3193s	10	10	scanning	scan	VERB
6w924b3193s	10	11	electron	electron	NOUN
6w924b3193s	10	12	microscopy	microscopy	NOUN
6w924b3193s	10	13	to	to	PART
6w924b3193s	10	14	show	show	VERB
6w924b3193s	10	15	that	that	DET
6w924b3193s	10	16	material	material	ADJ
6w924b3193s	10	17	displacement	displacement	NOUN
6w924b3193s	10	18	under	under	ADP
6w924b3193s	10	19	the	the	DET
6w924b3193s	10	20	stencil	stencil	NOUN
6w924b3193s	10	21	mask	mask	NOUN
6w924b3193s	10	22	can	can	AUX
6w924b3193s	10	23	range	range	VERB
6w924b3193s	10	24	from	from	ADP
6w924b3193s	10	25	approximately	approximately	ADV
6w924b3193s	10	26	0.1	0.1	NUM
6w924b3193s	10	27	to	to	PART
6w924b3193s	10	28	2	2	NUM
6w924b3193s	10	29	µm	µm	NOUN
6w924b3193s	10	30	even	even	ADV
6w924b3193s	10	31	near	near	ADP
6w924b3193s	10	32	room	room	NOUN
6w924b3193s	10	33	temperature	temperature	NOUN
6w924b3193s	10	34	(	(	PUNCT
6w924b3193s	10	35	45	45	NUM
6w924b3193s	10	36	°	°	NOUN
6w924b3193s	10	37	c	c	X
6w924b3193s	10	38	)	)	PUNCT
6w924b3193s	10	39	with	with	ADP
6w924b3193s	10	40	strong	strong	ADJ
6w924b3193s	10	41	dependence	dependence	NOUN
6w924b3193s	10	42	on	on	ADP
6w924b3193s	10	43	the	the	DET
6w924b3193s	10	44	deposited	deposited	ADJ
6w924b3193s	10	45	material	material	NOUN
6w924b3193s	10	46	and	and	CCONJ
6w924b3193s	10	47	the	the	DET
6w924b3193s	10	48	vacuum	vacuum	NOUN
6w924b3193s	10	49	conditions	condition	NOUN
6w924b3193s	10	50	.	.	PUNCT
6w924b3193s	11	1	it	it	PRON
6w924b3193s	11	2	was	be	AUX
6w924b3193s	11	3	shown	show	VERB
6w924b3193s	11	4	that	that	SCONJ
6w924b3193s	11	5	evaporation	evaporation	NOUN
6w924b3193s	11	6	in	in	ADP
6w924b3193s	11	7	n2	n2	PROPN
6w924b3193s	11	8	or	or	CCONJ
6w924b3193s	11	9	o2	o2	PROPN
6w924b3193s	11	10	background	background	NOUN
6w924b3193s	11	11	pressure	pressure	NOUN
6w924b3193s	11	12	suppresses	suppress	VERB
6w924b3193s	11	13	the	the	DET
6w924b3193s	11	14	spreading	spreading	NOUN
6w924b3193s	11	15	of	of	ADP
6w924b3193s	11	16	al	al	PROPN
6w924b3193s	11	17	,	,	PUNCT
6w924b3193s	11	18	cr	cr	PROPN
6w924b3193s	11	19	,	,	PUNCT
6w924b3193s	11	20	pt	pt	PROPN
6w924b3193s	11	21	,	,	PUNCT
6w924b3193s	11	22	and	and	CCONJ
6w924b3193s	11	23	ti	ti	NOUN
6w924b3193s	11	24	by	by	ADP
6w924b3193s	11	25	slightly	slightly	ADV
6w924b3193s	11	26	more	more	ADJ
6w924b3193s	11	27	than	than	ADP
6w924b3193s	11	28	a	a	DET
6w924b3193s	11	29	factor	factor	NOUN
6w924b3193s	11	30	of	of	ADP
6w924b3193s	11	31	two	two	NUM
6w924b3193s	11	32	.	.	PUNCT
6w924b3193s	12	1	in	in	ADP
6w924b3193s	12	2	order	order	NOUN
6w924b3193s	12	3	to	to	PART
6w924b3193s	12	4	explore	explore	VERB
6w924b3193s	12	5	and	and	CCONJ
6w924b3193s	12	6	develop	develop	VERB
6w924b3193s	12	7	the	the	DET
6w924b3193s	12	8	capability	capability	NOUN
6w924b3193s	12	9	of	of	ADP
6w924b3193s	12	10	this	this	DET
6w924b3193s	12	11	novel	novel	NOUN
6w924b3193s	12	12	technique	technique	NOUN
6w924b3193s	12	13	several	several	ADJ
6w924b3193s	12	14	structures	structure	NOUN
6w924b3193s	12	15	have	have	AUX
6w924b3193s	12	16	been	be	AUX
6w924b3193s	12	17	fabricated	fabricate	VERB
6w924b3193s	12	18	.	.	PUNCT
6w924b3193s	13	1	nanometer	nanometer	NOUN
6w924b3193s	13	2	-	-	PUNCT
6w924b3193s	13	3	scale	scale	NOUN
6w924b3193s	13	4	wires	wire	NOUN
6w924b3193s	13	5	with	with	ADP
6w924b3193s	13	6	minimum	minimum	ADJ
6w924b3193s	13	7	feature	feature	NOUN
6w924b3193s	13	8	dimension	dimension	NOUN
6w924b3193s	13	9	of	of	ADP
6w924b3193s	13	10	approximately	approximately	ADV
6w924b3193s	13	11	30	30	NUM
6w924b3193s	13	12	nm	nm	NOUN
6w924b3193s	13	13	and	and	CCONJ
6w924b3193s	13	14	nanowire	nanowire	NOUN
6w924b3193s	13	15	pairs	pair	NOUN
6w924b3193s	13	16	with	with	ADP
6w924b3193s	13	17	nanometer	nanometer	NOUN
6w924b3193s	13	18	-	-	PUNCT
6w924b3193s	13	19	scale	scale	NOUN
6w924b3193s	13	20	spacings	spacing	NOUN
6w924b3193s	13	21	have	have	AUX
6w924b3193s	13	22	been	be	AUX
6w924b3193s	13	23	created	create	VERB
6w924b3193s	13	24	.	.	PUNCT
6w924b3193s	14	1	arrays	array	NOUN
6w924b3193s	14	2	of	of	ADP
6w924b3193s	14	3	al	al	PROPN
6w924b3193s	14	4	/	/	SYM
6w924b3193s	14	5	alxoy	alxoy	PROPN
6w924b3193s	14	6	/	/	SYM
6w924b3193s	14	7	ge	ge	PROPN
6w924b3193s	14	8	metal	metal	NOUN
6w924b3193s	14	9	-	-	PUNCT
6w924b3193s	14	10	oxide	oxide	NOUN
6w924b3193s	14	11	-	-	PUNCT
6w924b3193s	14	12	semiconductor	semiconductor	NOUN
6w924b3193s	14	13	(	(	PUNCT
6w924b3193s	14	14	mos	mos	PROPN
6w924b3193s	14	15	)	)	PUNCT
6w924b3193s	14	16	structures	structure	NOUN
6w924b3193s	14	17	deposited	deposit	VERB
6w924b3193s	14	18	with	with	ADP
6w924b3193s	14	19	varying	vary	VERB
6w924b3193s	14	20	evaporation	evaporation	NOUN
6w924b3193s	14	21	conditions	condition	NOUN
6w924b3193s	14	22	have	have	AUX
6w924b3193s	14	23	been	be	AUX
6w924b3193s	14	24	formed	form	VERB
6w924b3193s	14	25	for	for	ADP
6w924b3193s	14	26	rapid	rapid	ADJ
6w924b3193s	14	27	material	material	ADJ
6w924b3193s	14	28	characterization	characterization	NOUN
6w924b3193s	14	29	.	.	PUNCT
6w924b3193s	15	1	finally	finally	ADV
6w924b3193s	15	2	,	,	PUNCT
6w924b3193s	15	3	a	a	DET
6w924b3193s	15	4	poly	poly	ADJ
6w924b3193s	15	5	-	-	PUNCT
6w924b3193s	15	6	ge	ge	PROPN
6w924b3193s	15	7	channel	channel	NOUN
6w924b3193s	15	8	thin	thin	ADJ
6w924b3193s	15	9	film	film	NOUN
6w924b3193s	15	10	transistor	transistor	NOUN
6w924b3193s	15	11	structure	structure	NOUN
6w924b3193s	15	12	was	be	AUX
6w924b3193s	15	13	fabricated	fabricate	VERB
6w924b3193s	15	14	.	.	PUNCT