id	sid	tid	token	lemma	pos
6t053f4819b	1	1	this	this	DET
6t053f4819b	1	2	thesis	thesis	NOUN
6t053f4819b	1	3	presents	present	VERB
6t053f4819b	1	4	the	the	DET
6t053f4819b	1	5	development	development	NOUN
6t053f4819b	1	6	and	and	CCONJ
6t053f4819b	1	7	progress	progress	NOUN
6t053f4819b	1	8	at	at	ADP
6t053f4819b	1	9	notre	notre	PROPN
6t053f4819b	1	10	dame	dame	NOUN
6t053f4819b	1	11	of	of	ADP
6t053f4819b	1	12	a	a	DET
6t053f4819b	1	13	0.25	0.25	NUM
6t053f4819b	1	14	ì_å_m	ì_å_m	PROPN
6t053f4819b	1	15	complementary	complementary	ADJ
6t053f4819b	1	16	metal	metal	NOUN
6t053f4819b	1	17	oxide	oxide	NOUN
6t053f4819b	1	18	-	-	PUNCT
6t053f4819b	1	19	semiconductor	semiconductor	NOUN
6t053f4819b	1	20	(	(	PUNCT
6t053f4819b	1	21	cmos	cmos	NOUN
6t053f4819b	1	22	)	)	PUNCT
6t053f4819b	1	23	process	process	NOUN
6t053f4819b	1	24	that	that	PRON
6t053f4819b	1	25	integrates	integrate	VERB
6t053f4819b	1	26	a	a	DET
6t053f4819b	1	27	novel	novel	ADJ
6t053f4819b	1	28	packaging	packaging	NOUN
6t053f4819b	1	29	process	process	NOUN
6t053f4819b	1	30	,	,	PUNCT
6t053f4819b	1	31	quilt	quilt	NOUN
6t053f4819b	1	32	-	-	PUNCT
6t053f4819b	1	33	packaging	packaging	NOUN
6t053f4819b	1	34	(	(	PUNCT
6t053f4819b	1	35	qp	qp	NOUN
6t053f4819b	1	36	)	)	PUNCT
6t053f4819b	1	37	.	.	PUNCT
6t053f4819b	2	1	deep	deep	ADJ
6t053f4819b	2	2	-	-	PUNCT
6t053f4819b	2	3	submicron	submicron	NOUN
6t053f4819b	2	4	lithography	lithography	NOUN
6t053f4819b	2	5	and	and	CCONJ
6t053f4819b	2	6	very	very	ADV
6t053f4819b	2	7	large	large	ADJ
6t053f4819b	2	8	scale	scale	NOUN
6t053f4819b	2	9	integration	integration	NOUN
6t053f4819b	2	10	(	(	PUNCT
6t053f4819b	2	11	vlsi	vlsi	PROPN
6t053f4819b	2	12	)	)	PUNCT
6t053f4819b	2	13	circuit	circuit	NOUN
6t053f4819b	2	14	with	with	ADP
6t053f4819b	2	15	roughly	roughly	ADV
6t053f4819b	2	16	50000	50000	NUM
6t053f4819b	2	17	transistors	transistor	NOUN
6t053f4819b	2	18	per	per	ADP
6t053f4819b	2	19	chip	chip	NOUN
6t053f4819b	2	20	require	require	VERB
6t053f4819b	2	21	the	the	DET
6t053f4819b	2	22	high	high	ADJ
6t053f4819b	2	23	through	through	ADV
6t053f4819b	2	24	-	-	PUNCT
6t053f4819b	2	25	put	put	NOUN
6t053f4819b	2	26	of	of	ADP
6t053f4819b	2	27	the	the	DET
6t053f4819b	2	28	g	g	NOUN
6t053f4819b	2	29	-	-	PUNCT
6t053f4819b	2	30	line	line	NOUN
6t053f4819b	2	31	photolithography	photolithography	NOUN
6t053f4819b	2	32	stepper	stepper	NOUN
6t053f4819b	2	33	tool	tool	NOUN
6t053f4819b	2	34	and	and	CCONJ
6t053f4819b	2	35	the	the	DET
6t053f4819b	2	36	high	high	ADJ
6t053f4819b	2	37	-	-	PUNCT
6t053f4819b	2	38	resolution	resolution	NOUN
6t053f4819b	2	39	of	of	ADP
6t053f4819b	2	40	the	the	DET
6t053f4819b	2	41	electron	electron	NOUN
6t053f4819b	2	42	beam	beam	NOUN
6t053f4819b	2	43	lithography	lithography	NOUN
6t053f4819b	2	44	(	(	PUNCT
6t053f4819b	2	45	ebl	ebl	NOUN
6t053f4819b	2	46	)	)	PUNCT
6t053f4819b	2	47	tool	tool	NOUN
6t053f4819b	2	48	.	.	PUNCT
6t053f4819b	3	1	an	an	DET
6t053f4819b	3	2	elaborate	elaborate	ADJ
6t053f4819b	3	3	mix	mix	NOUN
6t053f4819b	3	4	-	-	PUNCT
6t053f4819b	3	5	matching	match	VERB
6t053f4819b	3	6	scheme	scheme	NOUN
6t053f4819b	3	7	between	between	ADP
6t053f4819b	3	8	the	the	DET
6t053f4819b	3	9	two	two	NUM
6t053f4819b	3	10	very	very	ADV
6t053f4819b	3	11	different	different	ADJ
6t053f4819b	3	12	tools	tool	NOUN
6t053f4819b	3	13	provides	provide	VERB
6t053f4819b	3	14	accurate	accurate	ADJ
6t053f4819b	3	15	pattern	pattern	NOUN
6t053f4819b	3	16	placement	placement	NOUN
6t053f4819b	3	17	to	to	PART
6t053f4819b	3	18	meet	meet	VERB
6t053f4819b	3	19	the	the	DET
6t053f4819b	3	20	stringent	stringent	ADJ
6t053f4819b	3	21	requirement	requirement	NOUN
6t053f4819b	3	22	for	for	ADP
6t053f4819b	3	23	alignment	alignment	NOUN
6t053f4819b	3	24	.	.	PUNCT
6t053f4819b	4	1	process	process	NOUN
6t053f4819b	4	2	and	and	CCONJ
6t053f4819b	4	3	device	device	NOUN
6t053f4819b	4	4	simulation	simulation	NOUN
6t053f4819b	4	5	were	be	AUX
6t053f4819b	4	6	executed	execute	VERB
6t053f4819b	4	7	to	to	PART
6t053f4819b	4	8	tune	tune	VERB
6t053f4819b	4	9	the	the	DET
6t053f4819b	4	10	various	various	ADJ
6t053f4819b	4	11	process	process	NOUN
6t053f4819b	4	12	parameters	parameter	NOUN
6t053f4819b	4	13	and	and	CCONJ
6t053f4819b	4	14	predict	predict	VERB
6t053f4819b	4	15	the	the	DET
6t053f4819b	4	16	electrical	electrical	ADJ
6t053f4819b	4	17	behavior	behavior	NOUN
6t053f4819b	4	18	of	of	ADP
6t053f4819b	4	19	such	such	ADJ
6t053f4819b	4	20	devices	device	NOUN
6t053f4819b	4	21	.	.	PUNCT
6t053f4819b	5	1	this	this	DET
6t053f4819b	5	2	cmos	cmos	NOUN
6t053f4819b	5	3	process	process	NOUN
6t053f4819b	5	4	features	feature	VERB
6t053f4819b	5	5	5	5	NUM
6t053f4819b	5	6	nm	nm	PROPN
6t053f4819b	5	7	gate	gate	NOUN
6t053f4819b	5	8	oxide	oxide	NOUN
6t053f4819b	5	9	,	,	PUNCT
6t053f4819b	5	10	various	various	ADJ
6t053f4819b	5	11	implants	implant	NOUN
6t053f4819b	5	12	to	to	PART
6t053f4819b	5	13	suppress	suppress	VERB
6t053f4819b	5	14	short	short	ADJ
6t053f4819b	5	15	channel	channel	NOUN
6t053f4819b	5	16	effects	effect	NOUN
6t053f4819b	5	17	(	(	PUNCT
6t053f4819b	5	18	sce	sce	PROPN
6t053f4819b	5	19	)	)	PUNCT
6t053f4819b	5	20	,	,	PUNCT
6t053f4819b	5	21	dual	dual	ADJ
6t053f4819b	5	22	-	-	PUNCT
6t053f4819b	5	23	type	type	NOUN
6t053f4819b	5	24	polysilicon	polysilicon	NOUN
6t053f4819b	5	25	gates	gate	NOUN
6t053f4819b	5	26	,	,	PUNCT
6t053f4819b	5	27	silicon	silicon	NOUN
6t053f4819b	5	28	nitride	nitride	PROPN
6t053f4819b	5	29	spacer	spacer	PROPN
6t053f4819b	5	30	,	,	PUNCT
6t053f4819b	5	31	titanium	titanium	NOUN
6t053f4819b	5	32	silicide	silicide	NOUN
6t053f4819b	5	33	,	,	PUNCT
6t053f4819b	5	34	and	and	CCONJ
6t053f4819b	5	35	two	two	NUM
6t053f4819b	5	36	metal	metal	NOUN
6t053f4819b	5	37	layers	layer	NOUN
6t053f4819b	5	38	for	for	ADP
6t053f4819b	5	39	interconnection	interconnection	NOUN
6t053f4819b	5	40	.	.	PUNCT
6t053f4819b	6	1	copper	copper	NOUN
6t053f4819b	6	2	nodules	nodule	NOUN
6t053f4819b	6	3	for	for	ADP
6t053f4819b	6	4	quilt	quilt	NOUN
6t053f4819b	6	5	packaging	packaging	NOUN
6t053f4819b	6	6	(	(	PUNCT
6t053f4819b	6	7	qp	qp	X
6t053f4819b	6	8	)	)	PUNCT
6t053f4819b	6	9	are	be	AUX
6t053f4819b	6	10	fabricated	fabricate	VERB
6t053f4819b	6	11	and	and	CCONJ
6t053f4819b	6	12	protrude	protrude	ADJ
6t053f4819b	6	13	outside	outside	ADP
6t053f4819b	6	14	the	the	DET
6t053f4819b	6	15	chips	chip	NOUN
6t053f4819b	6	16	to	to	PART
6t053f4819b	6	17	provide	provide	VERB
6t053f4819b	6	18	fast	fast	ADJ
6t053f4819b	6	19	off	off	ADP
6t053f4819b	6	20	-	-	PUNCT
6t053f4819b	6	21	chip	chip	NOUN
6t053f4819b	6	22	interconnection	interconnection	NOUN
6t053f4819b	6	23	speed	speed	NOUN
6t053f4819b	6	24	for	for	ADP
6t053f4819b	6	25	the	the	DET
6t053f4819b	6	26	cmos	cmos	PROPN
6t053f4819b	6	27	circuitry	circuitry	NOUN
6t053f4819b	6	28	.	.	PUNCT
6t053f4819b	7	1	each	each	DET
6t053f4819b	7	2	die	die	NOUN
6t053f4819b	7	3	contains	contain	VERB
6t053f4819b	7	4	twelve	twelve	NUM
6t053f4819b	7	5	individual	individual	ADJ
6t053f4819b	7	6	qp	qp	NOUN
6t053f4819b	7	7	chips	chip	NOUN
6t053f4819b	7	8	that	that	PRON
6t053f4819b	7	9	can	can	AUX
6t053f4819b	7	10	be	be	AUX
6t053f4819b	7	11	soldered	solder	VERB
6t053f4819b	7	12	together	together	ADV
6t053f4819b	7	13	with	with	ADP
6t053f4819b	7	14	another	another	DET
6t053f4819b	7	15	qp	qp	NOUN
6t053f4819b	7	16	chips	chip	NOUN
6t053f4819b	7	17	from	from	ADP
6t053f4819b	7	18	the	the	DET
6t053f4819b	7	19	same	same	ADJ
6t053f4819b	7	20	wafer	wafer	NOUN
6t053f4819b	7	21	or	or	CCONJ
6t053f4819b	7	22	another	another	DET
6t053f4819b	7	23	wafer	wafer	NOUN
6t053f4819b	7	24	with	with	ADP
6t053f4819b	7	25	a	a	DET
6t053f4819b	7	26	different	different	ADJ
6t053f4819b	7	27	process	process	NOUN
6t053f4819b	7	28	,	,	PUNCT
6t053f4819b	7	29	to	to	PART
6t053f4819b	7	30	achieve	achieve	VERB
6t053f4819b	7	31	the	the	DET
6t053f4819b	7	32	ultimate	ultimate	ADJ
6t053f4819b	7	33	high	high	ADJ
6t053f4819b	7	34	performance	performance	NOUN
6t053f4819b	7	35	system	system	NOUN
6t053f4819b	7	36	integration	integration	NOUN
6t053f4819b	7	37	.	.	PUNCT