id	sid	tid	token	lemma	pos
6969z031n1r	1	1	the	the	DET
6969z031n1r	1	2	native	native	ADJ
6969z031n1r	1	3	oxide	oxide	NOUN
6969z031n1r	1	4	of	of	ADP
6969z031n1r	1	5	inalp	inalp	PROPN
6969z031n1r	1	6	has	have	AUX
6969z031n1r	1	7	been	be	AUX
6969z031n1r	1	8	investigated	investigate	VERB
6969z031n1r	1	9	for	for	ADP
6969z031n1r	1	10	its	its	PRON
6969z031n1r	1	11	electrical	electrical	ADJ
6969z031n1r	1	12	properties	property	NOUN
6969z031n1r	1	13	and	and	CCONJ
6969z031n1r	1	14	usefulness	usefulness	NOUN
6969z031n1r	1	15	in	in	ADP
6969z031n1r	1	16	high	high	ADJ
6969z031n1r	1	17	-	-	PUNCT
6969z031n1r	1	18	performance	performance	NOUN
6969z031n1r	1	19	electronic	electronic	ADJ
6969z031n1r	1	20	devices	device	NOUN
6969z031n1r	1	21	.	.	PUNCT
6969z031n1r	2	1	inalp	inalp	VERB
6969z031n1r	2	2	native	native	ADJ
6969z031n1r	2	3	oxide	oxide	NOUN
6969z031n1r	2	4	/	/	SYM
6969z031n1r	2	5	gaas	gaas	NOUN
6969z031n1r	2	6	mos	mos	PROPN
6969z031n1r	2	7	capacitors	capacitor	NOUN
6969z031n1r	2	8	have	have	AUX
6969z031n1r	2	9	been	be	AUX
6969z031n1r	2	10	fabricated	fabricate	VERB
6969z031n1r	2	11	for	for	ADP
6969z031n1r	2	12	use	use	NOUN
6969z031n1r	2	13	as	as	ADP
6969z031n1r	2	14	diagnostic	diagnostic	ADJ
6969z031n1r	2	15	devices	device	NOUN
6969z031n1r	2	16	,	,	PUNCT
6969z031n1r	2	17	and	and	CCONJ
6969z031n1r	2	18	the	the	DET
6969z031n1r	2	19	electrical	electrical	ADJ
6969z031n1r	2	20	properties	property	NOUN
6969z031n1r	2	21	of	of	ADP
6969z031n1r	2	22	inalp	inalp	PROPN
6969z031n1r	2	23	native	native	ADJ
6969z031n1r	2	24	oxide	oxide	NOUN
6969z031n1r	2	25	/	/	SYM
6969z031n1r	2	26	gaas	gaas	NOUN
6969z031n1r	2	27	mos	mos	PROPN
6969z031n1r	2	28	structures	structure	NOUN
6969z031n1r	2	29	have	have	AUX
6969z031n1r	2	30	been	be	AUX
6969z031n1r	2	31	determined	determine	VERB
6969z031n1r	2	32	from	from	ADP
6969z031n1r	2	33	electrical	electrical	ADJ
6969z031n1r	2	34	measurements	measurement	NOUN
6969z031n1r	2	35	of	of	ADP
6969z031n1r	2	36	these	these	DET
6969z031n1r	2	37	devices	device	NOUN
6969z031n1r	2	38	.	.	PUNCT
6969z031n1r	3	1	leakage	leakage	NOUN
6969z031n1r	3	2	current	current	ADJ
6969z031n1r	3	3	measurements	measurement	NOUN
6969z031n1r	3	4	suggest	suggest	VERB
6969z031n1r	3	5	that	that	SCONJ
6969z031n1r	3	6	the	the	DET
6969z031n1r	3	7	inalp	inalp	PROPN
6969z031n1r	3	8	oxide	oxide	NOUN
6969z031n1r	3	9	has	have	VERB
6969z031n1r	3	10	good	good	ADJ
6969z031n1r	3	11	insulating	insulate	VERB
6969z031n1r	3	12	properties	property	NOUN
6969z031n1r	3	13	for	for	ADP
6969z031n1r	3	14	oxide	oxide	NOUN
6969z031n1r	3	15	layers	layer	NOUN
6969z031n1r	3	16	as	as	ADV
6969z031n1r	3	17	thin	thin	ADJ
6969z031n1r	3	18	as	as	ADP
6969z031n1r	3	19	11	11	NUM
6969z031n1r	3	20	nm	nm	NOUN
6969z031n1r	3	21	.	.	PROPN
6969z031n1r	4	1	capacitance	capacitance	NOUN
6969z031n1r	4	2	-	-	PUNCT
6969z031n1r	4	3	voltage	voltage	NOUN
6969z031n1r	4	4	measurements	measurement	NOUN
6969z031n1r	4	5	and	and	CCONJ
6969z031n1r	4	6	impedance	impedance	NOUN
6969z031n1r	4	7	spectroscopy	spectroscopy	NOUN
6969z031n1r	4	8	indicate	indicate	VERB
6969z031n1r	4	9	that	that	SCONJ
6969z031n1r	4	10	the	the	DET
6969z031n1r	4	11	inalp	inalp	PROPN
6969z031n1r	4	12	oxide	oxide	NOUN
6969z031n1r	4	13	/	/	SYM
6969z031n1r	4	14	gaas	gaas	PROPN
6969z031n1r	4	15	mos	mos	PROPN
6969z031n1r	4	16	structure	structure	NOUN
6969z031n1r	4	17	has	have	VERB
6969z031n1r	4	18	a	a	DET
6969z031n1r	4	19	relatively	relatively	ADV
6969z031n1r	4	20	low	low	ADJ
6969z031n1r	4	21	interface	interface	NOUN
6969z031n1r	4	22	state	state	NOUN
6969z031n1r	4	23	density	density	NOUN
6969z031n1r	4	24	of	of	ADP
6969z031n1r	4	25	8	8	NUM
6969z031n1r	4	26	*	*	SYM
6969z031n1r	4	27	10	10	NUM
6969z031n1r	4	28	^	^	NOUN
6969z031n1r	4	29	11cm^-2	11cm^-2	PROPN
6969z031n1r	4	30	.	.	PUNCT
6969z031n1r	5	1	this	this	DET
6969z031n1r	5	2	density	density	NOUN
6969z031n1r	5	3	of	of	ADP
6969z031n1r	5	4	interface	interface	NOUN
6969z031n1r	5	5	states	state	NOUN
6969z031n1r	5	6	is	be	AUX
6969z031n1r	5	7	sufficiently	sufficiently	ADV
6969z031n1r	5	8	low	low	ADJ
6969z031n1r	5	9	to	to	PART
6969z031n1r	5	10	suggest	suggest	VERB
6969z031n1r	5	11	field	field	NOUN
6969z031n1r	5	12	-	-	PUNCT
6969z031n1r	5	13	effect	effect	NOUN
6969z031n1r	5	14	transistors	transistor	NOUN
6969z031n1r	5	15	using	use	VERB
6969z031n1r	5	16	inalp	inalp	VERB
6969z031n1r	5	17	native	native	ADJ
6969z031n1r	5	18	oxide	oxide	NOUN
6969z031n1r	5	19	as	as	SCONJ
6969z031n1r	5	20	the	the	DET
6969z031n1r	5	21	gate	gate	NOUN
6969z031n1r	5	22	insulator	insulator	NOUN
6969z031n1r	5	23	should	should	AUX
6969z031n1r	5	24	be	be	AUX
6969z031n1r	5	25	possible	possible	ADJ
6969z031n1r	5	26	.	.	PUNCT
6969z031n1r	6	1	field	field	NOUN
6969z031n1r	6	2	-	-	PUNCT
6969z031n1r	6	3	effect	effect	NOUN
6969z031n1r	6	4	transistors	transistor	NOUN
6969z031n1r	6	5	using	use	VERB
6969z031n1r	6	6	inalp	inalp	VERB
6969z031n1r	6	7	native	native	ADJ
6969z031n1r	6	8	oxide	oxide	NOUN
6969z031n1r	6	9	/	/	SYM
6969z031n1r	6	10	gaas	gaas	NOUN
6969z031n1r	6	11	structures	structure	NOUN
6969z031n1r	6	12	have	have	AUX
6969z031n1r	6	13	also	also	ADV
6969z031n1r	6	14	been	be	AUX
6969z031n1r	6	15	explored	explore	VERB
6969z031n1r	6	16	,	,	PUNCT
6969z031n1r	6	17	resulting	result	VERB
6969z031n1r	6	18	in	in	ADP
6969z031n1r	6	19	the	the	DET
6969z031n1r	6	20	first	first	ADJ
6969z031n1r	6	21	demonstration	demonstration	NOUN
6969z031n1r	6	22	of	of	ADP
6969z031n1r	6	23	gaas	gaas	NOUN
6969z031n1r	6	24	mosfets	mosfet	NOUN
6969z031n1r	6	25	using	use	VERB
6969z031n1r	6	26	inalp	inalp	NOUN
6969z031n1r	6	27	oxide	oxide	NOUN
6969z031n1r	6	28	as	as	ADP
6969z031n1r	6	29	the	the	DET
6969z031n1r	6	30	gate	gate	NOUN
6969z031n1r	6	31	dielectric	dielectric	NOUN
6969z031n1r	6	32	.	.	PUNCT
6969z031n1r	7	1	two	two	NUM
6969z031n1r	7	2	different	different	ADJ
6969z031n1r	7	3	fabrication	fabrication	NOUN
6969z031n1r	7	4	procedures	procedure	NOUN
6969z031n1r	7	5	for	for	ADP
6969z031n1r	7	6	gaas	gaas	NOUN
6969z031n1r	7	7	-	-	PUNCT
6969z031n1r	7	8	based	base	VERB
6969z031n1r	7	9	mosfets	mosfet	NOUN
6969z031n1r	7	10	have	have	AUX
6969z031n1r	7	11	been	be	AUX
6969z031n1r	7	12	developed	develop	VERB
6969z031n1r	7	13	.	.	PUNCT
6969z031n1r	8	1	one	one	NUM
6969z031n1r	8	2	uses	use	VERB
6969z031n1r	8	3	the	the	DET
6969z031n1r	8	4	mesa	mesa	PROPN
6969z031n1r	8	5	isolation	isolation	NOUN
6969z031n1r	8	6	technique	technique	NOUN
6969z031n1r	8	7	,	,	PUNCT
6969z031n1r	8	8	and	and	CCONJ
6969z031n1r	8	9	the	the	DET
6969z031n1r	8	10	other	other	ADJ
6969z031n1r	8	11	uses	use	VERB
6969z031n1r	8	12	oxygen	oxygen	NOUN
6969z031n1r	8	13	ion	ion	NOUN
6969z031n1r	8	14	implantation	implantation	NOUN
6969z031n1r	8	15	and	and	CCONJ
6969z031n1r	8	16	regional	regional	ADJ
6969z031n1r	8	17	oxidation	oxidation	NOUN
6969z031n1r	8	18	techniques	technique	NOUN
6969z031n1r	8	19	.	.	PUNCT
6969z031n1r	9	1	both	both	CCONJ
6969z031n1r	9	2	the	the	DET
6969z031n1r	9	3	dc	dc	PROPN
6969z031n1r	9	4	and	and	CCONJ
6969z031n1r	9	5	rf	rf	PROPN
6969z031n1r	9	6	characteristics	characteristic	NOUN
6969z031n1r	9	7	of	of	ADP
6969z031n1r	9	8	fabricated	fabricate	VERB
6969z031n1r	9	9	mosfets	mosfet	NOUN
6969z031n1r	9	10	have	have	AUX
6969z031n1r	9	11	been	be	AUX
6969z031n1r	9	12	evaluated	evaluate	VERB
6969z031n1r	9	13	.	.	PUNCT
6969z031n1r	10	1	for	for	ADP
6969z031n1r	10	2	mesa	mesa	NOUN
6969z031n1r	10	3	-	-	PUNCT
6969z031n1r	10	4	isolated	isolate	VERB
6969z031n1r	10	5	mosfets	mosfet	NOUN
6969z031n1r	10	6	,	,	PUNCT
6969z031n1r	10	7	a	a	DET
6969z031n1r	10	8	2	2	NUM
6969z031n1r	10	9	um	um	INTJ
6969z031n1r	10	10	gate	gate	NOUN
6969z031n1r	10	11	length	length	NOUN
6969z031n1r	10	12	device	device	NOUN
6969z031n1r	10	13	showed	show	VERB
6969z031n1r	10	14	a	a	DET
6969z031n1r	10	15	63.8	63.8	NUM
6969z031n1r	10	16	ms	ms	PROPN
6969z031n1r	10	17	/	/	SYM
6969z031n1r	10	18	mm	mm	NOUN
6969z031n1r	10	19	peak	peak	NOUN
6969z031n1r	10	20	intrinsic	intrinsic	ADJ
6969z031n1r	10	21	transconductance	transconductance	NOUN
6969z031n1r	10	22	,	,	PUNCT
6969z031n1r	10	23	and	and	CCONJ
6969z031n1r	10	24	for	for	ADP
6969z031n1r	10	25	implant	implant	ADJ
6969z031n1r	10	26	isolated	isolate	VERB
6969z031n1r	10	27	mosfets	mosfet	NOUN
6969z031n1r	10	28	,	,	PUNCT
6969z031n1r	10	29	a	a	DET
6969z031n1r	10	30	1	1	NUM
6969z031n1r	10	31	um	um	INTJ
6969z031n1r	10	32	gate	gate	NOUN
6969z031n1r	10	33	length	length	NOUN
6969z031n1r	10	34	device	device	NOUN
6969z031n1r	10	35	showed	show	VERB
6969z031n1r	10	36	a	a	DET
6969z031n1r	10	37	105	105	NUM
6969z031n1r	10	38	ms	ms	PROPN
6969z031n1r	10	39	/	/	SYM
6969z031n1r	10	40	mm	mm	NOUN
6969z031n1r	10	41	peak	peak	NOUN
6969z031n1r	10	42	intrinsic	intrinsic	ADJ
6969z031n1r	10	43	transconductance	transconductance	NOUN
6969z031n1r	10	44	and	and	CCONJ
6969z031n1r	10	45	2.53	2.53	NUM
6969z031n1r	10	46	ghz	ghz	NOUN
6969z031n1r	10	47	cut	cut	VERB
6969z031n1r	10	48	-	-	PUNCT
6969z031n1r	10	49	off	off	ADP
6969z031n1r	10	50	frequency	frequency	NOUN
6969z031n1r	10	51	.	.	PUNCT
6969z031n1r	11	1	the	the	DET
6969z031n1r	11	2	measured	measure	VERB
6969z031n1r	11	3	mosfet	mosfet	NOUN
6969z031n1r	11	4	performance	performance	NOUN
6969z031n1r	11	5	has	have	AUX
6969z031n1r	11	6	been	be	AUX
6969z031n1r	11	7	compared	compare	VERB
6969z031n1r	11	8	to	to	ADP
6969z031n1r	11	9	theoretical	theoretical	ADJ
6969z031n1r	11	10	expectations	expectation	NOUN
6969z031n1r	11	11	based	base	VERB
6969z031n1r	11	12	on	on	ADP
6969z031n1r	11	13	simplified	simplified	ADJ
6969z031n1r	11	14	,	,	PUNCT
6969z031n1r	11	15	idealized	idealize	VERB
6969z031n1r	11	16	device	device	NOUN
6969z031n1r	11	17	models	model	NOUN
6969z031n1r	11	18	.	.	PUNCT
6969z031n1r	12	1	the	the	DET
6969z031n1r	12	2	measured	measured	ADJ
6969z031n1r	12	3	dc	dc	PROPN
6969z031n1r	12	4	characteristics	characteristic	NOUN
6969z031n1r	12	5	of	of	ADP
6969z031n1r	12	6	fabricated	fabricate	VERB
6969z031n1r	12	7	inalp	inalp	PROPN
6969z031n1r	12	8	oxide	oxide	NOUN
6969z031n1r	12	9	/	/	SYM
6969z031n1r	12	10	gaas	gaas	NOUN
6969z031n1r	12	11	mosfets	mosfet	NOUN
6969z031n1r	12	12	fall	fall	VERB
6969z031n1r	12	13	below	below	ADP
6969z031n1r	12	14	the	the	DET
6969z031n1r	12	15	theoretical	theoretical	ADJ
6969z031n1r	12	16	predictions	prediction	NOUN
6969z031n1r	12	17	in	in	ADP
6969z031n1r	12	18	terms	term	NOUN
6969z031n1r	12	19	of	of	ADP
6969z031n1r	12	20	drain	drain	NOUN
6969z031n1r	12	21	current	current	NOUN
6969z031n1r	12	22	and	and	CCONJ
6969z031n1r	12	23	transconductance	transconductance	NOUN
6969z031n1r	12	24	,	,	PUNCT
6969z031n1r	12	25	while	while	SCONJ
6969z031n1r	12	26	the	the	DET
6969z031n1r	12	27	measured	measured	ADJ
6969z031n1r	12	28	rf	rf	ADJ
6969z031n1r	12	29	results	result	NOUN
6969z031n1r	12	30	show	show	VERB
6969z031n1r	12	31	that	that	SCONJ
6969z031n1r	12	32	the	the	DET
6969z031n1r	12	33	devices	device	NOUN
6969z031n1r	12	34	have	have	VERB
6969z031n1r	12	35	lower	low	ADJ
6969z031n1r	12	36	cut	cut	VERB
6969z031n1r	12	37	-	-	PUNCT
6969z031n1r	12	38	off	off	ADP
6969z031n1r	12	39	frequencies	frequency	NOUN
6969z031n1r	12	40	than	than	SCONJ
6969z031n1r	12	41	expected	expect	VERB
6969z031n1r	12	42	from	from	ADP
6969z031n1r	12	43	simple	simple	ADJ
6969z031n1r	12	44	theoretical	theoretical	ADJ
6969z031n1r	12	45	models	model	NOUN
6969z031n1r	12	46	.	.	PUNCT
6969z031n1r	13	1	van	van	PROPN
6969z031n1r	13	2	der	der	PROPN
6969z031n1r	13	3	pauw	pauw	PROPN
6969z031n1r	13	4	measurements	measurement	NOUN
6969z031n1r	13	5	have	have	AUX
6969z031n1r	13	6	been	be	AUX
6969z031n1r	13	7	performed	perform	VERB
6969z031n1r	13	8	on	on	ADP
6969z031n1r	13	9	the	the	DET
6969z031n1r	13	10	heterostructures	heterostructure	NOUN
6969z031n1r	13	11	,	,	PUNCT
6969z031n1r	13	12	and	and	CCONJ
6969z031n1r	13	13	measurement	measurement	NOUN
6969z031n1r	13	14	results	result	NOUN
6969z031n1r	13	15	suggest	suggest	VERB
6969z031n1r	13	16	the	the	DET
6969z031n1r	13	17	oxidation	oxidation	NOUN
6969z031n1r	13	18	conditions	condition	NOUN
6969z031n1r	13	19	,	,	PUNCT
6969z031n1r	13	20	including	include	VERB
6969z031n1r	13	21	time	time	NOUN
6969z031n1r	13	22	and	and	CCONJ
6969z031n1r	13	23	temperature	temperature	NOUN
6969z031n1r	13	24	,	,	PUNCT
6969z031n1r	13	25	cause	cause	VERB
6969z031n1r	13	26	degradation	degradation	NOUN
6969z031n1r	13	27	of	of	ADP
6969z031n1r	13	28	the	the	DET
6969z031n1r	13	29	gaas	gaas	NOUN
6969z031n1r	13	30	channel	channel	NOUN
6969z031n1r	13	31	material	material	NOUN
6969z031n1r	13	32	properties	property	NOUN
6969z031n1r	13	33	.	.	PUNCT
6969z031n1r	14	1	in	in	ADP
6969z031n1r	14	2	particular	particular	ADJ
6969z031n1r	14	3	,	,	PUNCT
6969z031n1r	14	4	the	the	DET
6969z031n1r	14	5	channel	channel	NOUN
6969z031n1r	14	6	mobility	mobility	NOUN
6969z031n1r	14	7	and	and	CCONJ
6969z031n1r	14	8	carrier	carrier	NOUN
6969z031n1r	14	9	concentration	concentration	NOUN
6969z031n1r	14	10	are	be	AUX
6969z031n1r	14	11	observed	observe	VERB
6969z031n1r	14	12	to	to	PART
6969z031n1r	14	13	decrease	decrease	VERB
6969z031n1r	14	14	following	follow	VERB
6969z031n1r	14	15	oxidation	oxidation	NOUN
6969z031n1r	14	16	of	of	ADP
6969z031n1r	14	17	the	the	DET
6969z031n1r	14	18	inalp	inalp	PROPN
6969z031n1r	14	19	layer	layer	NOUN
6969z031n1r	14	20	in	in	ADP
6969z031n1r	14	21	the	the	DET
6969z031n1r	14	22	mosfet	mosfet	NOUN
6969z031n1r	14	23	heterostructure	heterostructure	NOUN
6969z031n1r	14	24	.	.	PUNCT
6969z031n1r	15	1	this	this	DET
6969z031n1r	15	2	degradation	degradation	NOUN
6969z031n1r	15	3	appears	appear	VERB
6969z031n1r	15	4	to	to	PART
6969z031n1r	15	5	be	be	AUX
6969z031n1r	15	6	related	relate	VERB
6969z031n1r	15	7	to	to	ADP
6969z031n1r	15	8	material	material	ADJ
6969z031n1r	15	9	growth	growth	NOUN
6969z031n1r	15	10	and	and	CCONJ
6969z031n1r	15	11	oxidation	oxidation	NOUN
6969z031n1r	15	12	conditions	condition	NOUN
6969z031n1r	15	13	,	,	PUNCT
6969z031n1r	15	14	and	and	CCONJ
6969z031n1r	15	15	may	may	AUX
6969z031n1r	15	16	be	be	AUX
6969z031n1r	15	17	improved	improve	VERB
6969z031n1r	15	18	by	by	ADP
6969z031n1r	15	19	optimizing	optimize	VERB
6969z031n1r	15	20	the	the	DET
6969z031n1r	15	21	heterostructure	heterostructure	NOUN
6969z031n1r	15	22	growth	growth	NOUN
6969z031n1r	15	23	and	and	CCONJ
6969z031n1r	15	24	processing	processing	NOUN
6969z031n1r	15	25	conditions	condition	NOUN
6969z031n1r	15	26	.	.	PUNCT