id	sid	tid	token	lemma	pos
5x21td98j21	1	1	the	the	DET
5x21td98j21	1	2	ability	ability	NOUN
5x21td98j21	1	3	of	of	ADP
5x21td98j21	1	4	variable	variable	ADJ
5x21td98j21	1	5	angle	angle	NOUN
5x21td98j21	1	6	spectroscopic	spectroscopic	NOUN
5x21td98j21	1	7	ellipsometry	ellipsometry	NOUN
5x21td98j21	1	8	(	(	PUNCT
5x21td98j21	1	9	vase	vase	NOUN
5x21td98j21	1	10	)	)	PUNCT
5x21td98j21	1	11	to	to	PART
5x21td98j21	1	12	determine	determine	VERB
5x21td98j21	1	13	the	the	DET
5x21td98j21	1	14	thickness	thickness	NOUN
5x21td98j21	1	15	of	of	ADP
5x21td98j21	1	16	the	the	DET
5x21td98j21	1	17	thin	thin	ADJ
5x21td98j21	1	18	in0.49al0.51p	in0.49al0.51p	NOUN
5x21td98j21	1	19	(	(	PUNCT
5x21td98j21	1	20	inalp	inalp	PROPN
5x21td98j21	1	21	)	)	PUNCT
5x21td98j21	1	22	native	native	ADJ
5x21td98j21	1	23	gate	gate	PROPN
5x21td98j21	1	24	oxide	oxide	NOUN
5x21td98j21	1	25	(	(	PUNCT
5x21td98j21	1	26	'	'	PUNCT
5x21td98j21	1	27	inalp	inalp	PROPN
5x21td98j21	1	28	-	-	PUNCT
5x21td98j21	1	29	ox	ox	NOUN
5x21td98j21	1	30	'	'	NOUN
5x21td98j21	1	31	)	)	PUNCT
5x21td98j21	1	32	for	for	ADP
5x21td98j21	1	33	gaas	gaas	NOUN
5x21td98j21	1	34	-	-	PUNCT
5x21td98j21	1	35	based	base	VERB
5x21td98j21	1	36	mosfet	mosfet	NOUN
5x21td98j21	1	37	devices	device	NOUN
5x21td98j21	1	38	has	have	AUX
5x21td98j21	1	39	been	be	AUX
5x21td98j21	1	40	demonstrated	demonstrate	VERB
5x21td98j21	1	41	.	.	PUNCT
5x21td98j21	2	1	the	the	DET
5x21td98j21	2	2	optical	optical	ADJ
5x21td98j21	2	3	constants	constant	NOUN
5x21td98j21	2	4	of	of	ADP
5x21td98j21	2	5	inalp	inalp	PROPN
5x21td98j21	2	6	-	-	PUNCT
5x21td98j21	2	7	ox	ox	NOUN
5x21td98j21	2	8	,	,	PUNCT
5x21td98j21	2	9	in0.49ga0.51p	in0.49ga0.51p	NOUN
5x21td98j21	2	10	(	(	PUNCT
5x21td98j21	2	11	ingap	ingap	PROPN
5x21td98j21	2	12	)	)	PUNCT
5x21td98j21	2	13	,	,	PUNCT
5x21td98j21	2	14	and	and	CCONJ
5x21td98j21	2	15	inalp	inalp	NOUN
5x21td98j21	2	16	have	have	AUX
5x21td98j21	2	17	been	be	AUX
5x21td98j21	2	18	determined	determine	VERB
5x21td98j21	2	19	by	by	ADP
5x21td98j21	2	20	vase	vase	NOUN
5x21td98j21	2	21	measurements	measurement	NOUN
5x21td98j21	2	22	using	use	VERB
5x21td98j21	2	23	a	a	DET
5x21td98j21	2	24	photon	photon	NOUN
5x21td98j21	2	25	energy	energy	NOUN
5x21td98j21	2	26	range	range	NOUN
5x21td98j21	2	27	of	of	ADP
5x21td98j21	2	28	1.45	1.45	NUM
5x21td98j21	2	29	to	to	ADP
5x21td98j21	2	30	5.45	5.45	NUM
5x21td98j21	2	31	ev	ev	NOUN
5x21td98j21	2	32	at	at	ADP
5x21td98j21	2	33	room	room	NOUN
5x21td98j21	2	34	temperature	temperature	NOUN
5x21td98j21	2	35	.	.	PUNCT
5x21td98j21	3	1	the	the	DET
5x21td98j21	3	2	optical	optical	ADJ
5x21td98j21	3	3	constants	constant	NOUN
5x21td98j21	3	4	of	of	ADP
5x21td98j21	3	5	inalp	inalp	PROPN
5x21td98j21	3	6	and	and	CCONJ
5x21td98j21	3	7	inalp	inalp	PROPN
5x21td98j21	3	8	-	-	PUNCT
5x21td98j21	3	9	ox	ox	NOUN
5x21td98j21	3	10	are	be	AUX
5x21td98j21	3	11	used	use	VERB
5x21td98j21	3	12	to	to	PART
5x21td98j21	3	13	characterize	characterize	VERB
5x21td98j21	3	14	a	a	DET
5x21td98j21	3	15	thick	thick	ADJ
5x21td98j21	3	16	partially	partially	ADV
5x21td98j21	3	17	-	-	PUNCT
5x21td98j21	3	18	oxidized	oxidize	VERB
5x21td98j21	3	19	inalp	inalp	ADJ
5x21td98j21	3	20	epitaxial	epitaxial	ADJ
5x21td98j21	3	21	film	film	NOUN
5x21td98j21	3	22	grown	grow	VERB
5x21td98j21	3	23	on	on	ADP
5x21td98j21	3	24	gaas	gaas	NOUN
5x21td98j21	3	25	structure	structure	NOUN
5x21td98j21	3	26	.	.	PUNCT
5x21td98j21	4	1	the	the	DET
5x21td98j21	4	2	excellent	excellent	ADJ
5x21td98j21	4	3	agreement	agreement	NOUN
5x21td98j21	4	4	between	between	ADP
5x21td98j21	4	5	the	the	DET
5x21td98j21	4	6	thickness	thickness	NOUN
5x21td98j21	4	7	values	value	NOUN
5x21td98j21	4	8	determined	determine	VERB
5x21td98j21	4	9	by	by	ADP
5x21td98j21	4	10	transmission	transmission	NOUN
5x21td98j21	4	11	electron	electron	NOUN
5x21td98j21	4	12	microscope	microscope	NOUN
5x21td98j21	4	13	(	(	PUNCT
5x21td98j21	4	14	tem	tem	PROPN
5x21td98j21	4	15	)	)	PUNCT
5x21td98j21	4	16	imaging	imaging	NOUN
5x21td98j21	4	17	and	and	CCONJ
5x21td98j21	4	18	by	by	ADP
5x21td98j21	4	19	vase	vase	NOUN
5x21td98j21	4	20	supports	support	VERB
5x21td98j21	4	21	the	the	DET
5x21td98j21	4	22	validity	validity	NOUN
5x21td98j21	4	23	of	of	ADP
5x21td98j21	4	24	our	our	PRON
5x21td98j21	4	25	optical	optical	ADJ
5x21td98j21	4	26	constants	constant	NOUN
5x21td98j21	4	27	results	result	NOUN
5x21td98j21	4	28	.	.	PUNCT
5x21td98j21	5	1	models	model	NOUN
5x21td98j21	5	2	have	have	AUX
5x21td98j21	5	3	also	also	ADV
5x21td98j21	5	4	been	be	AUX
5x21td98j21	5	5	developed	develop	VERB
5x21td98j21	5	6	to	to	PART
5x21td98j21	5	7	accurately	accurately	ADV
5x21td98j21	5	8	fit	fit	VERB
5x21td98j21	5	9	the	the	DET
5x21td98j21	5	10	thickness	thickness	NOUN
5x21td98j21	5	11	of	of	ADP
5x21td98j21	5	12	less	less	ADJ
5x21td98j21	5	13	than	than	ADP
5x21td98j21	5	14	100	100	NUM
5x21td98j21	5	15	ìä	ìä	ADP
5x21td98j21	5	16	'	'	NOUN
5x21td98j21	5	17	_	_	DET
5x21td98j21	5	18	inalp	inalp	PROPN
5x21td98j21	5	19	-	-	PUNCT
5x21td98j21	5	20	ox	ox	NOUN
5x21td98j21	5	21	gate	gate	NOUN
5x21td98j21	5	22	oxides	oxide	NOUN
5x21td98j21	5	23	grown	grow	VERB
5x21td98j21	5	24	directly	directly	ADV
5x21td98j21	5	25	upon	upon	SCONJ
5x21td98j21	5	26	a	a	DET
5x21td98j21	5	27	multi	multi	ADJ
5x21td98j21	5	28	-	-	ADJ
5x21td98j21	5	29	layer	layer	ADJ
5x21td98j21	5	30	mosfet	mosfet	NOUN
5x21td98j21	5	31	heterostructure	heterostructure	NOUN
5x21td98j21	5	32	.	.	PUNCT
5x21td98j21	6	1	the	the	DET
5x21td98j21	6	2	deviation	deviation	NOUN
5x21td98j21	6	3	of	of	ADP
5x21td98j21	6	4	inalp	inalp	PROPN
5x21td98j21	6	5	-	-	PUNCT
5x21td98j21	6	6	ox	ox	NOUN
5x21td98j21	6	7	thickness	thickness	NOUN
5x21td98j21	6	8	results	result	NOUN
5x21td98j21	6	9	determined	determine	VERB
5x21td98j21	6	10	by	by	ADP
5x21td98j21	6	11	vase	vase	NOUN
5x21td98j21	6	12	from	from	ADP
5x21td98j21	6	13	those	those	PRON
5x21td98j21	6	14	determined	determine	VERB
5x21td98j21	6	15	by	by	ADP
5x21td98j21	6	16	tem	tem	PROPN
5x21td98j21	6	17	is	be	AUX
5x21td98j21	6	18	within	within	ADP
5x21td98j21	6	19	4	4	NUM
5x21td98j21	6	20	%	%	NOUN
5x21td98j21	6	21	.	.	PUNCT