id	sid	tid	token	lemma	pos
5h73pv65c7m	1	1	interband	interband	PROPN
5h73pv65c7m	1	2	tunnel	tunnel	NOUN
5h73pv65c7m	1	3	transistors	transistor	NOUN
5h73pv65c7m	1	4	have	have	AUX
5h73pv65c7m	1	5	been	be	AUX
5h73pv65c7m	1	6	attracting	attract	VERB
5h73pv65c7m	1	7	increasing	increase	VERB
5h73pv65c7m	1	8	attention	attention	NOUN
5h73pv65c7m	1	9	because	because	SCONJ
5h73pv65c7m	1	10	of	of	ADP
5h73pv65c7m	1	11	their	their	PRON
5h73pv65c7m	1	12	potential	potential	NOUN
5h73pv65c7m	1	13	to	to	PART
5h73pv65c7m	1	14	achieve	achieve	VERB
5h73pv65c7m	1	15	subthreshold	subthreshold	ADJ
5h73pv65c7m	1	16	swings	swing	NOUN
5h73pv65c7m	1	17	below	below	ADP
5h73pv65c7m	1	18	the	the	DET
5h73pv65c7m	1	19	60	60	NUM
5h73pv65c7m	1	20	mv	mv	PROPN
5h73pv65c7m	1	21	/	/	SYM
5h73pv65c7m	1	22	decade	decade	NOUN
5h73pv65c7m	1	23	thermionic	thermionic	ADJ
5h73pv65c7m	1	24	limit	limit	NOUN
5h73pv65c7m	1	25	,	,	PUNCT
5h73pv65c7m	1	26	and	and	CCONJ
5h73pv65c7m	1	27	realize	realize	VERB
5h73pv65c7m	1	28	high	high	ADJ
5h73pv65c7m	1	29	performance	performance	NOUN
5h73pv65c7m	1	30	and	and	CCONJ
5h73pv65c7m	1	31	low	low	ADJ
5h73pv65c7m	1	32	power	power	NOUN
5h73pv65c7m	1	33	dissipation	dissipation	NOUN
5h73pv65c7m	1	34	simultaneously	simultaneously	ADV
5h73pv65c7m	1	35	.	.	PUNCT
5h73pv65c7m	2	1	this	this	DET
5h73pv65c7m	2	2	work	work	NOUN
5h73pv65c7m	2	3	explores	explore	VERB
5h73pv65c7m	2	4	the	the	DET
5h73pv65c7m	2	5	design	design	NOUN
5h73pv65c7m	2	6	and	and	CCONJ
5h73pv65c7m	2	7	modeling	modeling	NOUN
5h73pv65c7m	2	8	of	of	ADP
5h73pv65c7m	2	9	semiconducting	semiconducting	NOUN
5h73pv65c7m	2	10	and	and	CCONJ
5h73pv65c7m	2	11	graphene	graphene	NOUN
5h73pv65c7m	2	12	nanoribbon	nanoribbon	NOUN
5h73pv65c7m	2	13	-	-	PUNCT
5h73pv65c7m	2	14	based	base	VERB
5h73pv65c7m	2	15	tunnel	tunnel	NOUN
5h73pv65c7m	2	16	transistors	transistor	NOUN
5h73pv65c7m	2	17	,	,	PUNCT
5h73pv65c7m	2	18	to	to	PART
5h73pv65c7m	2	19	understand	understand	VERB
5h73pv65c7m	2	20	the	the	DET
5h73pv65c7m	2	21	performance	performance	NOUN
5h73pv65c7m	2	22	measures	measure	NOUN
5h73pv65c7m	2	23	and	and	CCONJ
5h73pv65c7m	2	24	guide	guide	VERB
5h73pv65c7m	2	25	the	the	DET
5h73pv65c7m	2	26	experimental	experimental	ADJ
5h73pv65c7m	2	27	development	development	NOUN
5h73pv65c7m	2	28	.	.	PUNCT
5h73pv65c7m	3	1	experiments	experiment	NOUN
5h73pv65c7m	3	2	in	in	ADP
5h73pv65c7m	3	3	the	the	DET
5h73pv65c7m	3	4	formation	formation	NOUN
5h73pv65c7m	3	5	of	of	ADP
5h73pv65c7m	3	6	ge	ge	PROPN
5h73pv65c7m	3	7	interband	interband	PROPN
5h73pv65c7m	3	8	junctions	junction	NOUN
5h73pv65c7m	3	9	are	be	AUX
5h73pv65c7m	3	10	also	also	ADV
5h73pv65c7m	3	11	described	describe	VERB
5h73pv65c7m	3	12	.	.	PUNCT
5h73pv65c7m	4	1	analytic	analytic	ADJ
5h73pv65c7m	4	2	expressions	expression	NOUN
5h73pv65c7m	4	3	for	for	ADP
5h73pv65c7m	4	4	zener	zener	NOUN
5h73pv65c7m	4	5	tunneling	tunneling	NOUN
5h73pv65c7m	4	6	in	in	ADP
5h73pv65c7m	4	7	one-	one-	ADJ
5h73pv65c7m	4	8	,	,	PUNCT
5h73pv65c7m	4	9	two-	two-	NOUN
5h73pv65c7m	4	10	,	,	PUNCT
5h73pv65c7m	4	11	and	and	CCONJ
5h73pv65c7m	4	12	three	three	NUM
5h73pv65c7m	4	13	-	-	PUNCT
5h73pv65c7m	4	14	dimensional	dimensional	ADJ
5h73pv65c7m	4	15	semiconductors	semiconductor	NOUN
5h73pv65c7m	4	16	are	be	AUX
5h73pv65c7m	4	17	derived	derive	VERB
5h73pv65c7m	4	18	to	to	PART
5h73pv65c7m	4	19	establish	establish	VERB
5h73pv65c7m	4	20	the	the	DET
5h73pv65c7m	4	21	guidelines	guideline	NOUN
5h73pv65c7m	4	22	for	for	ADP
5h73pv65c7m	4	23	tunnel	tunnel	NOUN
5h73pv65c7m	4	24	transistor	transistor	NOUN
5h73pv65c7m	4	25	design	design	NOUN
5h73pv65c7m	4	26	.	.	PUNCT
5h73pv65c7m	5	1	an	an	DET
5h73pv65c7m	5	2	analytic	analytic	ADJ
5h73pv65c7m	5	3	expression	expression	NOUN
5h73pv65c7m	5	4	is	be	AUX
5h73pv65c7m	5	5	derived	derive	VERB
5h73pv65c7m	5	6	,	,	PUNCT
5h73pv65c7m	5	7	showing	show	VERB
5h73pv65c7m	5	8	that	that	SCONJ
5h73pv65c7m	5	9	the	the	DET
5h73pv65c7m	5	10	subthreshold	subthreshold	ADJ
5h73pv65c7m	5	11	swing	swing	NOUN
5h73pv65c7m	5	12	of	of	ADP
5h73pv65c7m	5	13	interband	interband	NOUN
5h73pv65c7m	5	14	tunnel	tunnel	NOUN
5h73pv65c7m	5	15	transistors	transistor	NOUN
5h73pv65c7m	5	16	is	be	AUX
5h73pv65c7m	5	17	a	a	DET
5h73pv65c7m	5	18	function	function	NOUN
5h73pv65c7m	5	19	of	of	ADP
5h73pv65c7m	5	20	the	the	DET
5h73pv65c7m	5	21	gate	gate	NOUN
5h73pv65c7m	5	22	-	-	PUNCT
5h73pv65c7m	5	23	to	to	ADP
5h73pv65c7m	5	24	-	-	PUNCT
5h73pv65c7m	5	25	source	source	NOUN
5h73pv65c7m	5	26	voltage	voltage	NOUN
5h73pv65c7m	5	27	and	and	CCONJ
5h73pv65c7m	5	28	can	can	AUX
5h73pv65c7m	5	29	be	be	AUX
5h73pv65c7m	5	30	less	less	ADJ
5h73pv65c7m	5	31	than	than	ADP
5h73pv65c7m	5	32	the	the	DET
5h73pv65c7m	5	33	thermionic	thermionic	ADJ
5h73pv65c7m	5	34	limit	limit	NOUN
5h73pv65c7m	5	35	of	of	ADP
5h73pv65c7m	5	36	60	60	NUM
5h73pv65c7m	5	37	mv	mv	PROPN
5h73pv65c7m	5	38	/	/	SYM
5h73pv65c7m	5	39	decade	decade	NOUN
5h73pv65c7m	5	40	in	in	ADP
5h73pv65c7m	5	41	mosfet	mosfet	NOUN
5h73pv65c7m	5	42	.	.	PUNCT
5h73pv65c7m	6	1	based	base	VERB
5h73pv65c7m	6	2	on	on	ADP
5h73pv65c7m	6	3	this	this	DET
5h73pv65c7m	6	4	expression	expression	NOUN
5h73pv65c7m	6	5	,	,	PUNCT
5h73pv65c7m	6	6	a	a	DET
5h73pv65c7m	6	7	new	new	ADJ
5h73pv65c7m	6	8	fully	fully	ADV
5h73pv65c7m	6	9	-	-	PUNCT
5h73pv65c7m	6	10	depleted	deplete	VERB
5h73pv65c7m	6	11	interband	interband	NOUN
5h73pv65c7m	6	12	tunnel	tunnel	NOUN
5h73pv65c7m	6	13	transistor	transistor	NOUN
5h73pv65c7m	6	14	structure	structure	NOUN
5h73pv65c7m	6	15	is	be	AUX
5h73pv65c7m	6	16	proposed	propose	VERB
5h73pv65c7m	6	17	and	and	CCONJ
5h73pv65c7m	6	18	designed	design	VERB
5h73pv65c7m	6	19	.	.	PUNCT
5h73pv65c7m	7	1	the	the	DET
5h73pv65c7m	7	2	low	low	ADJ
5h73pv65c7m	7	3	subthreshold	subthreshold	ADJ
5h73pv65c7m	7	4	swing	swing	NOUN
5h73pv65c7m	7	5	is	be	AUX
5h73pv65c7m	7	6	verified	verify	VERB
5h73pv65c7m	7	7	by	by	ADP
5h73pv65c7m	7	8	synopsys	synopsys	PROPN
5h73pv65c7m	7	9	tcad	tcad	PROPN
5h73pv65c7m	7	10	simulation	simulation	PROPN
5h73pv65c7m	7	11	.	.	PUNCT
5h73pv65c7m	8	1	germanium	germanium	NOUN
5h73pv65c7m	8	2	interband	interband	PROPN
5h73pv65c7m	8	3	tunnel	tunnel	NOUN
5h73pv65c7m	8	4	transistors	transistor	NOUN
5h73pv65c7m	8	5	are	be	AUX
5h73pv65c7m	8	6	shown	show	VERB
5h73pv65c7m	8	7	by	by	ADP
5h73pv65c7m	8	8	simulation	simulation	NOUN
5h73pv65c7m	8	9	to	to	PART
5h73pv65c7m	8	10	exhibit	exhibit	VERB
5h73pv65c7m	8	11	improved	improve	VERB
5h73pv65c7m	8	12	on	on	ADP
5h73pv65c7m	8	13	-	-	PUNCT
5h73pv65c7m	8	14	state	state	NOUN
5h73pv65c7m	8	15	performance	performance	NOUN
5h73pv65c7m	8	16	vs.	vs.	X
5h73pv65c7m	8	17	si	si	X
5h73pv65c7m	8	18	,	,	PUNCT
5h73pv65c7m	8	19	because	because	SCONJ
5h73pv65c7m	8	20	of	of	ADP
5h73pv65c7m	8	21	the	the	DET
5h73pv65c7m	8	22	smaller	small	ADJ
5h73pv65c7m	8	23	bandgap	bandgap	NOUN
5h73pv65c7m	8	24	and	and	CCONJ
5h73pv65c7m	8	25	effective	effective	ADJ
5h73pv65c7m	8	26	mass	mass	NOUN
5h73pv65c7m	8	27	.	.	PUNCT
5h73pv65c7m	9	1	to	to	PART
5h73pv65c7m	9	2	realize	realize	VERB
5h73pv65c7m	9	3	the	the	DET
5h73pv65c7m	9	4	proposed	propose	VERB
5h73pv65c7m	9	5	ge	ge	PROPN
5h73pv65c7m	9	6	interband	interband	PROPN
5h73pv65c7m	9	7	tunnel	tunnel	PROPN
5h73pv65c7m	9	8	transistor	transistor	NOUN
5h73pv65c7m	9	9	,	,	PUNCT
5h73pv65c7m	9	10	a	a	DET
5h73pv65c7m	9	11	rapid	rapid	ADJ
5h73pv65c7m	9	12	melt	melt	ADJ
5h73pv65c7m	9	13	growth	growth	NOUN
5h73pv65c7m	9	14	process	process	NOUN
5h73pv65c7m	9	15	was	be	AUX
5h73pv65c7m	9	16	developed	develop	VERB
5h73pv65c7m	9	17	to	to	PART
5h73pv65c7m	9	18	form	form	VERB
5h73pv65c7m	9	19	submicron	submicron	NOUN
5h73pv65c7m	9	20	p+n+	p+n+	PROPN
5h73pv65c7m	9	21	ge	ge	PROPN
5h73pv65c7m	9	22	tunnel	tunnel	PROPN
5h73pv65c7m	9	23	junctions	junction	NOUN
5h73pv65c7m	9	24	.	.	PUNCT
5h73pv65c7m	10	1	transmission	transmission	NOUN
5h73pv65c7m	10	2	electron	electron	NOUN
5h73pv65c7m	10	3	microscopy	microscopy	NOUN
5h73pv65c7m	10	4	(	(	PUNCT
5h73pv65c7m	10	5	tem	tem	PROPN
5h73pv65c7m	10	6	)	)	PUNCT
5h73pv65c7m	10	7	reveals	reveal	VERB
5h73pv65c7m	10	8	the	the	DET
5h73pv65c7m	10	9	regrown	regrown	VERB
5h73pv65c7m	10	10	film	film	NOUN
5h73pv65c7m	10	11	and	and	CCONJ
5h73pv65c7m	10	12	a	a	DET
5h73pv65c7m	10	13	contact	contact	NOUN
5h73pv65c7m	10	14	microstructure	microstructure	NOUN
5h73pv65c7m	10	15	consistent	consistent	ADJ
5h73pv65c7m	10	16	with	with	ADP
5h73pv65c7m	10	17	the	the	DET
5h73pv65c7m	10	18	al	al	PROPN
5h73pv65c7m	10	19	-	-	PUNCT
5h73pv65c7m	10	20	ge	ge	PROPN
5h73pv65c7m	10	21	phase	phase	PROPN
5h73pv65c7m	10	22	diagram	diagram	PROPN
5h73pv65c7m	10	23	.	.	PUNCT
5h73pv65c7m	11	1	negative	negative	ADJ
5h73pv65c7m	11	2	differential	differential	ADJ
5h73pv65c7m	11	3	resistances	resistance	NOUN
5h73pv65c7m	11	4	are	be	AUX
5h73pv65c7m	11	5	observed	observe	VERB
5h73pv65c7m	11	6	which	which	PRON
5h73pv65c7m	11	7	indicate	indicate	VERB
5h73pv65c7m	11	8	the	the	DET
5h73pv65c7m	11	9	junction	junction	NOUN
5h73pv65c7m	11	10	was	be	AUX
5h73pv65c7m	11	11	abrupt	abrupt	ADJ
5h73pv65c7m	11	12	heavily	heavily	ADV
5h73pv65c7m	11	13	-	-	PUNCT
5h73pv65c7m	11	14	doped	dope	VERB
5h73pv65c7m	11	15	.	.	PUNCT
5h73pv65c7m	12	1	a	a	DET
5h73pv65c7m	12	2	graphene	graphene	ADJ
5h73pv65c7m	12	3	nanoribbon	nanoribbon	NOUN
5h73pv65c7m	12	4	(	(	PUNCT
5h73pv65c7m	12	5	gnr	gnr	PROPN
5h73pv65c7m	12	6	)	)	PUNCT
5h73pv65c7m	12	7	tunnel	tunnel	NOUN
5h73pv65c7m	12	8	transistor	transistor	NOUN
5h73pv65c7m	12	9	is	be	AUX
5h73pv65c7m	12	10	first	first	ADV
5h73pv65c7m	12	11	proposed	propose	VERB
5h73pv65c7m	12	12	and	and	CCONJ
5h73pv65c7m	12	13	modeled	model	VERB
5h73pv65c7m	12	14	analytically	analytically	ADV
5h73pv65c7m	12	15	by	by	ADP
5h73pv65c7m	12	16	quasi-1d	quasi-1d	PROPN
5h73pv65c7m	12	17	poisson	poisson	PROPN
5h73pv65c7m	12	18	equation	equation	PROPN
5h73pv65c7m	12	19	.	.	PUNCT
5h73pv65c7m	13	1	an	an	DET
5h73pv65c7m	13	2	improved	improved	ADJ
5h73pv65c7m	13	3	numerical	numerical	ADJ
5h73pv65c7m	13	4	model	model	NOUN
5h73pv65c7m	13	5	is	be	AUX
5h73pv65c7m	13	6	developed	develop	VERB
5h73pv65c7m	13	7	that	that	PRON
5h73pv65c7m	13	8	treates	treat	VERB
5h73pv65c7m	13	9	energy	energy	NOUN
5h73pv65c7m	13	10	-	-	PUNCT
5h73pv65c7m	13	11	dependent	dependent	ADJ
5h73pv65c7m	13	12	transmission	transmission	NOUN
5h73pv65c7m	13	13	coefficients	coefficient	NOUN
5h73pv65c7m	13	14	,	,	PUNCT
5h73pv65c7m	13	15	direct	direct	ADJ
5h73pv65c7m	13	16	source	source	NOUN
5h73pv65c7m	13	17	-	-	PUNCT
5h73pv65c7m	13	18	to	to	ADP
5h73pv65c7m	13	19	-	-	PUNCT
5h73pv65c7m	13	20	drain	drain	NOUN
5h73pv65c7m	13	21	tunneling	tunneling	NOUN
5h73pv65c7m	13	22	,	,	PUNCT
5h73pv65c7m	13	23	and	and	CCONJ
5h73pv65c7m	13	24	self	self	NOUN
5h73pv65c7m	13	25	-	-	PUNCT
5h73pv65c7m	13	26	consistent	consistent	ADJ
5h73pv65c7m	13	27	channel	channel	NOUN
5h73pv65c7m	13	28	electrostatics	electrostatic	NOUN
5h73pv65c7m	13	29	.	.	PUNCT
5h73pv65c7m	14	1	graphene	graphene	ADJ
5h73pv65c7m	14	2	nanoribbons	nanoribbon	NOUN
5h73pv65c7m	14	3	have	have	VERB
5h73pv65c7m	14	4	a	a	DET
5h73pv65c7m	14	5	width	width	ADJ
5h73pv65c7m	14	6	-	-	PUNCT
5h73pv65c7m	14	7	tunable	tunable	ADJ
5h73pv65c7m	14	8	bandgap	bandgap	NOUN
5h73pv65c7m	14	9	and	and	CCONJ
5h73pv65c7m	14	10	ultra	ultra	ADJ
5h73pv65c7m	14	11	-	-	ADJ
5h73pv65c7m	14	12	thin	thin	ADJ
5h73pv65c7m	14	13	body	body	NOUN
5h73pv65c7m	14	14	layer	layer	NOUN
5h73pv65c7m	14	15	,	,	PUNCT
5h73pv65c7m	14	16	which	which	PRON
5h73pv65c7m	14	17	is	be	AUX
5h73pv65c7m	14	18	especially	especially	ADV
5h73pv65c7m	14	19	favorable	favorable	ADJ
5h73pv65c7m	14	20	for	for	ADP
5h73pv65c7m	14	21	tunnel	tunnel	NOUN
5h73pv65c7m	14	22	transistor	transistor	NOUN
5h73pv65c7m	14	23	applications	application	NOUN
5h73pv65c7m	14	24	.	.	PUNCT
5h73pv65c7m	15	1	it	it	PRON
5h73pv65c7m	15	2	is	be	AUX
5h73pv65c7m	15	3	shown	show	VERB
5h73pv65c7m	15	4	by	by	ADP
5h73pv65c7m	15	5	simulation	simulation	NOUN
5h73pv65c7m	15	6	that	that	SCONJ
5h73pv65c7m	15	7	the	the	DET
5h73pv65c7m	15	8	gnr	gnr	PROPN
5h73pv65c7m	15	9	tunnel	tunnel	NOUN
5h73pv65c7m	15	10	transistors	transistor	NOUN
5h73pv65c7m	15	11	at	at	ADP
5h73pv65c7m	15	12	the	the	DET
5h73pv65c7m	15	13	long	long	ADJ
5h73pv65c7m	15	14	channel	channel	NOUN
5h73pv65c7m	15	15	limit	limit	NOUN
5h73pv65c7m	15	16	can	can	AUX
5h73pv65c7m	15	17	operate	operate	VERB
5h73pv65c7m	15	18	at	at	ADP
5h73pv65c7m	15	19	0.1	0.1	NUM
5h73pv65c7m	15	20	v	v	NOUN
5h73pv65c7m	15	21	with	with	ADP
5h73pv65c7m	15	22	an	an	DET
5h73pv65c7m	15	23	ultra	ultra	ADJ
5h73pv65c7m	15	24	-	-	ADJ
5h73pv65c7m	15	25	low	low	ADJ
5h73pv65c7m	15	26	subthreshold	subthreshold	ADJ
5h73pv65c7m	15	27	swing	swing	NOUN
5h73pv65c7m	15	28	of	of	ADP
5h73pv65c7m	15	29	2.8	2.8	NUM
5h73pv65c7m	15	30	mv	mv	PROPN
5h73pv65c7m	15	31	/	/	SYM
5h73pv65c7m	15	32	decade	decade	NOUN
5h73pv65c7m	15	33	,	,	PUNCT
5h73pv65c7m	15	34	but	but	CCONJ
5h73pv65c7m	15	35	the	the	DET
5h73pv65c7m	15	36	subthreshold	subthreshold	ADJ
5h73pv65c7m	15	37	swing	swing	NOUN
5h73pv65c7m	15	38	and	and	CCONJ
5h73pv65c7m	15	39	off	off	ADP
5h73pv65c7m	15	40	-	-	PUNCT
5h73pv65c7m	15	41	state	state	NOUN
5h73pv65c7m	15	42	current	current	NOUN
5h73pv65c7m	15	43	are	be	AUX
5h73pv65c7m	15	44	degraded	degrade	VERB
5h73pv65c7m	15	45	at	at	ADP
5h73pv65c7m	15	46	short	short	ADJ
5h73pv65c7m	15	47	channel	channel	NOUN
5h73pv65c7m	15	48	length	length	NOUN
5h73pv65c7m	15	49	due	due	ADJ
5h73pv65c7m	15	50	to	to	ADP
5h73pv65c7m	15	51	direct	direct	ADJ
5h73pv65c7m	15	52	source	source	NOUN
5h73pv65c7m	15	53	-	-	PUNCT
5h73pv65c7m	15	54	to	to	ADP
5h73pv65c7m	15	55	-	-	PUNCT
5h73pv65c7m	15	56	drain	drain	NOUN
5h73pv65c7m	15	57	tunneling	tunneling	NOUN
5h73pv65c7m	15	58	.	.	PUNCT
5h73pv65c7m	16	1	smaller	small	ADJ
5h73pv65c7m	16	2	ribbon	ribbon	NOUN
5h73pv65c7m	16	3	widths	width	NOUN
5h73pv65c7m	16	4	(	(	PUNCT
5h73pv65c7m	16	5	down	down	ADP
5h73pv65c7m	16	6	to	to	ADP
5h73pv65c7m	16	7	a	a	DET
5h73pv65c7m	16	8	certain	certain	ADJ
5h73pv65c7m	16	9	limit	limit	NOUN
5h73pv65c7m	16	10	)	)	PUNCT
5h73pv65c7m	16	11	can	can	AUX
5h73pv65c7m	16	12	significantly	significantly	ADV
5h73pv65c7m	16	13	improve	improve	VERB
5h73pv65c7m	16	14	the	the	DET
5h73pv65c7m	16	15	off	off	ADP
5h73pv65c7m	16	16	-	-	PUNCT
5h73pv65c7m	16	17	state	state	NOUN
5h73pv65c7m	16	18	behavior	behavior	NOUN
5h73pv65c7m	16	19	without	without	ADP
5h73pv65c7m	16	20	considerably	considerably	ADV
5h73pv65c7m	16	21	affecting	affect	VERB
5h73pv65c7m	16	22	the	the	DET
5h73pv65c7m	16	23	on	on	ADP
5h73pv65c7m	16	24	-	-	PUNCT
5h73pv65c7m	16	25	state	state	NOUN
5h73pv65c7m	16	26	current	current	ADJ
5h73pv65c7m	16	27	density	density	NOUN
5h73pv65c7m	16	28	and	and	CCONJ
5h73pv65c7m	16	29	speed	speed	NOUN
5h73pv65c7m	16	30	.	.	PUNCT
5h73pv65c7m	17	1	for	for	ADP
5h73pv65c7m	17	2	20	20	NUM
5h73pv65c7m	17	3	nm	nm	NOUN
5h73pv65c7m	17	4	channel	channel	NOUN
5h73pv65c7m	17	5	length	length	NOUN
5h73pv65c7m	17	6	,	,	PUNCT
5h73pv65c7m	17	7	gnr	gnr	NOUN
5h73pv65c7m	17	8	tunnel	tunnel	NOUN
5h73pv65c7m	17	9	transistors	transistor	NOUN
5h73pv65c7m	17	10	with	with	ADP
5h73pv65c7m	17	11	ribbon	ribbon	NOUN
5h73pv65c7m	17	12	width	width	NOUN
5h73pv65c7m	17	13	of	of	ADP
5h73pv65c7m	17	14	2	2	NUM
5h73pv65c7m	17	15	and	and	CCONJ
5h73pv65c7m	17	16	3	3	NUM
5h73pv65c7m	17	17	nm	nm	NOUN
5h73pv65c7m	17	18	can	can	AUX
5h73pv65c7m	17	19	achieve	achieve	VERB
5h73pv65c7m	17	20	high	high	ADJ
5h73pv65c7m	17	21	performance	performance	NOUN
5h73pv65c7m	17	22	and	and	CCONJ
5h73pv65c7m	17	23	low	low	ADJ
5h73pv65c7m	17	24	operating	operating	NOUN
5h73pv65c7m	17	25	power	power	NOUN
5h73pv65c7m	17	26	simultaneously	simultaneously	ADV
5h73pv65c7m	17	27	,	,	PUNCT
5h73pv65c7m	17	28	meeting	meet	VERB
5h73pv65c7m	17	29	2012	2012	NUM
5h73pv65c7m	17	30	itrs	itrs	ADJ
5h73pv65c7m	17	31	targets	target	NOUN
5h73pv65c7m	17	32	.	.	PUNCT