id sid tid token lemma pos 5999n298t9k 1 1 the the DET 5999n298t9k 1 2 most most ADV 5999n298t9k 1 3 commonly commonly ADV 5999n298t9k 1 4 adopted adopt VERB 5999n298t9k 1 5 method method NOUN 5999n298t9k 1 6 for for ADP 5999n298t9k 1 7 building build VERB 5999n298t9k 1 8 better well ADV 5999n298t9k 1 9 complementary complementary ADJ 5999n298t9k 1 10 metaloxide metaloxide ADJ 5999n298t9k 1 11 - - PUNCT 5999n298t9k 1 12 semiconductor semiconductor NOUN 5999n298t9k 1 13 ( ( PUNCT 5999n298t9k 1 14 cmos cmos NOUN 5999n298t9k 1 15 ) ) PUNCT 5999n298t9k 1 16 device device NOUN 5999n298t9k 1 17 is be AUX 5999n298t9k 1 18 by by ADP 5999n298t9k 1 19 reducing reduce VERB 5999n298t9k 1 20 the the DET 5999n298t9k 1 21 physical physical ADJ 5999n298t9k 1 22 dimensions dimension NOUN 5999n298t9k 1 23 of of ADP 5999n298t9k 1 24 the the DET 5999n298t9k 1 25 structure structure NOUN 5999n298t9k 1 26 . . PUNCT 5999n298t9k 2 1 through through ADP 5999n298t9k 2 2 scaled scale VERB 5999n298t9k 2 3 size size NOUN 5999n298t9k 2 4 - - PUNCT 5999n298t9k 2 5 reduction reduction NOUN 5999n298t9k 2 6 , , PUNCT 5999n298t9k 2 7 cmos cmos NOUN 5999n298t9k 2 8 devices device NOUN 5999n298t9k 2 9 can can AUX 5999n298t9k 2 10 run run VERB 5999n298t9k 2 11 at at ADP 5999n298t9k 2 12 higher high ADJ 5999n298t9k 2 13 speed speed NOUN 5999n298t9k 2 14 , , PUNCT 5999n298t9k 2 15 consume consume VERB 5999n298t9k 2 16 less less ADJ 5999n298t9k 2 17 power power NOUN 5999n298t9k 2 18 and and CCONJ 5999n298t9k 2 19 attain attain VERB 5999n298t9k 2 20 higher high ADJ 5999n298t9k 2 21 packing packing NOUN 5999n298t9k 2 22 density density NOUN 5999n298t9k 2 23 . . PUNCT 5999n298t9k 3 1 the the DET 5999n298t9k 3 2 aim aim NOUN 5999n298t9k 3 3 of of ADP 5999n298t9k 3 4 the the DET 5999n298t9k 3 5 thesis thesis NOUN 5999n298t9k 3 6 is be AUX 5999n298t9k 3 7 to to PART 5999n298t9k 3 8 design design VERB 5999n298t9k 3 9 the the DET 5999n298t9k 3 10 fabrication fabrication NOUN 5999n298t9k 3 11 process process NOUN 5999n298t9k 3 12 for for ADP 5999n298t9k 3 13 building build VERB 5999n298t9k 3 14 cmos cmos NOUN 5999n298t9k 3 15 devices device NOUN 5999n298t9k 3 16 with with ADP 5999n298t9k 3 17 0.25μm 0.25μm NUM 5999n298t9k 3 18 gate gate NOUN 5999n298t9k 3 19 length length NOUN 5999n298t9k 3 20 and and CCONJ 5999n298t9k 3 21 quiltpackaging quiltpackage VERB 5999n298t9k 3 22 protruding protrude VERB 5999n298t9k 3 23 metal metal NOUN 5999n298t9k 3 24 nodules nodule NOUN 5999n298t9k 3 25 . . PUNCT 5999n298t9k 4 1 alterations alteration NOUN 5999n298t9k 4 2 to to ADP 5999n298t9k 4 3 the the DET 5999n298t9k 4 4 existing exist VERB 5999n298t9k 4 5 one one NUM 5999n298t9k 4 6 - - PUNCT 5999n298t9k 4 7 and and CCONJ 5999n298t9k 4 8 - - PUNCT 5999n298t9k 4 9 a a DET 5999n298t9k 4 10 - - PUNCT 5999n298t9k 4 11 half half NOUN 5999n298t9k 4 12 micron micron NOUN 5999n298t9k 4 13 cmos cmos NOUN 5999n298t9k 4 14 fabrication fabrication NOUN 5999n298t9k 4 15 process process NOUN 5999n298t9k 4 16 were be AUX 5999n298t9k 4 17 made make VERB 5999n298t9k 4 18 to to PART 5999n298t9k 4 19 accommodate accommodate VERB 5999n298t9k 4 20 the the DET 5999n298t9k 4 21 structural structural ADJ 5999n298t9k 4 22 modification modification NOUN 5999n298t9k 4 23 for for ADP 5999n298t9k 4 24 the the DET 5999n298t9k 4 25 deep deep ADJ 5999n298t9k 4 26 - - PUNCT 5999n298t9k 4 27 submicron submicron NOUN 5999n298t9k 4 28 device device NOUN 5999n298t9k 4 29 . . PUNCT 5999n298t9k 5 1 prior prior ADV 5999n298t9k 5 2 to to ADP 5999n298t9k 5 3 wafer wafer NOUN 5999n298t9k 5 4 processing processing NOUN 5999n298t9k 5 5 , , PUNCT 5999n298t9k 5 6 computer computer NOUN 5999n298t9k 5 7 simulations simulation NOUN 5999n298t9k 5 8 were be AUX 5999n298t9k 5 9 executed execute VERB 5999n298t9k 5 10 to to PART 5999n298t9k 5 11 determine determine VERB 5999n298t9k 5 12 the the DET 5999n298t9k 5 13 suitable suitable ADJ 5999n298t9k 5 14 processing processing NOUN 5999n298t9k 5 15 conditions condition NOUN 5999n298t9k 5 16 and and CCONJ 5999n298t9k 5 17 to to PART 5999n298t9k 5 18 predict predict VERB 5999n298t9k 5 19 the the DET 5999n298t9k 5 20 electrical electrical ADJ 5999n298t9k 5 21 behavior behavior NOUN 5999n298t9k 5 22 of of ADP 5999n298t9k 5 23 such such ADJ 5999n298t9k 5 24 device device NOUN 5999n298t9k 5 25 . . PUNCT 5999n298t9k 6 1 pattern pattern NOUN 5999n298t9k 6 2 definitions definition NOUN 5999n298t9k 6 3 would would AUX 5999n298t9k 6 4 be be AUX 5999n298t9k 6 5 relied rely VERB 5999n298t9k 6 6 on on ADP 5999n298t9k 6 7 a a DET 5999n298t9k 6 8 combination combination NOUN 5999n298t9k 6 9 of of ADP 5999n298t9k 6 10 photolithography photolithography NOUN 5999n298t9k 6 11 and and CCONJ 5999n298t9k 6 12 electron electron NOUN 5999n298t9k 6 13 beam beam NOUN 5999n298t9k 6 14 lithography lithography NOUN 5999n298t9k 6 15 . . PUNCT 5999n298t9k 7 1 although although SCONJ 5999n298t9k 7 2 we we PRON 5999n298t9k 7 3 are be AUX 5999n298t9k 7 4 unable unable ADJ 5999n298t9k 7 5 to to PART 5999n298t9k 7 6 complete complete VERB 5999n298t9k 7 7 the the DET 5999n298t9k 7 8 fabrication fabrication NOUN 5999n298t9k 7 9 process process NOUN 5999n298t9k 7 10 at at ADP 5999n298t9k 7 11 the the DET 5999n298t9k 7 12 moment moment NOUN 5999n298t9k 7 13 , , PUNCT 5999n298t9k 7 14 we we PRON 5999n298t9k 7 15 have have AUX 5999n298t9k 7 16 demonstrated demonstrate VERB 5999n298t9k 7 17 the the DET 5999n298t9k 7 18 ability ability NOUN 5999n298t9k 7 19 to to PART 5999n298t9k 7 20 perform perform VERB 5999n298t9k 7 21 the the DET 5999n298t9k 7 22 large large ADJ 5999n298t9k 7 23 - - PUNCT 5999n298t9k 7 24 scale scale NOUN 5999n298t9k 7 25 electron electron NOUN 5999n298t9k 7 26 beam beam NOUN 5999n298t9k 7 27 lithography lithography NOUN 5999n298t9k 7 28 needed need VERB 5999n298t9k 7 29 for for ADP 5999n298t9k 7 30 our our PRON 5999n298t9k 7 31 fabrication fabrication NOUN 5999n298t9k 7 32 with with ADP 5999n298t9k 7 33 the the DET 5999n298t9k 7 34 elionix elionix PROPN 5999n298t9k 7 35 els-7700 els-7700 PROPN 5999n298t9k 7 36 ebl ebl PROPN 5999n298t9k 7 37 system system PROPN 5999n298t9k 7 38 . . PUNCT