id	sid	tid	token	lemma	pos
3484zg66p2g	1	1	in	in	ADP
3484zg66p2g	1	2	this	this	DET
3484zg66p2g	1	3	thesis	thesis	NOUN
3484zg66p2g	1	4	a	a	DET
3484zg66p2g	1	5	method	method	NOUN
3484zg66p2g	1	6	to	to	PART
3484zg66p2g	1	7	fabricate	fabricate	VERB
3484zg66p2g	1	8	cmos	cmos	NOUN
3484zg66p2g	1	9	circuits	circuit	NOUN
3484zg66p2g	1	10	with	with	ADP
3484zg66p2g	1	11	locos	locos	NOUN
3484zg66p2g	1	12	isolation	isolation	NOUN
3484zg66p2g	1	13	scheme	scheme	NOUN
3484zg66p2g	1	14	is	be	AUX
3484zg66p2g	1	15	implemented	implement	VERB
3484zg66p2g	1	16	.	.	PUNCT
3484zg66p2g	2	1	the	the	DET
3484zg66p2g	2	2	basic	basic	ADJ
3484zg66p2g	2	3	idea	idea	NOUN
3484zg66p2g	2	4	is	be	AUX
3484zg66p2g	2	5	to	to	PART
3484zg66p2g	2	6	selectively	selectively	ADV
3484zg66p2g	2	7	grow	grow	VERB
3484zg66p2g	2	8	oxide	oxide	NOUN
3484zg66p2g	2	9	over	over	ADP
3484zg66p2g	2	10	the	the	DET
3484zg66p2g	2	11	field	field	NOUN
3484zg66p2g	2	12	oxide	oxide	NOUN
3484zg66p2g	2	13	regions	region	NOUN
3484zg66p2g	2	14	of	of	ADP
3484zg66p2g	2	15	the	the	DET
3484zg66p2g	2	16	devices	device	NOUN
3484zg66p2g	2	17	.	.	PUNCT
3484zg66p2g	3	1	this	this	PRON
3484zg66p2g	3	2	is	be	AUX
3484zg66p2g	3	3	done	do	VERB
3484zg66p2g	3	4	by	by	ADP
3484zg66p2g	3	5	covering	cover	VERB
3484zg66p2g	3	6	the	the	DET
3484zg66p2g	3	7	active	active	ADJ
3484zg66p2g	3	8	regions	region	NOUN
3484zg66p2g	3	9	of	of	ADP
3484zg66p2g	3	10	the	the	DET
3484zg66p2g	3	11	substrate	substrate	NOUN
3484zg66p2g	3	12	with	with	ADP
3484zg66p2g	3	13	a	a	DET
3484zg66p2g	3	14	thin	thin	ADJ
3484zg66p2g	3	15	layer	layer	NOUN
3484zg66p2g	3	16	of	of	ADP
3484zg66p2g	3	17	silicon	silicon	NOUN
3484zg66p2g	3	18	nitride	nitride	PROPN
3484zg66p2g	3	19	.	.	PROPN
3484zg66p2g	4	1	silicon	silicon	PROPN
3484zg66p2g	4	2	nitride	nitride	PROPN
3484zg66p2g	4	3	acts	act	VERB
3484zg66p2g	4	4	as	as	ADP
3484zg66p2g	4	5	a	a	DET
3484zg66p2g	4	6	diffusion	diffusion	NOUN
3484zg66p2g	4	7	barrier	barrier	NOUN
3484zg66p2g	4	8	to	to	ADP
3484zg66p2g	4	9	the	the	DET
3484zg66p2g	4	10	oxidizing	oxidizing	NOUN
3484zg66p2g	4	11	species	specie	NOUN
3484zg66p2g	4	12	.	.	PUNCT
3484zg66p2g	5	1	the	the	DET
3484zg66p2g	5	2	processing	processing	NOUN
3484zg66p2g	5	3	procedure	procedure	NOUN
3484zg66p2g	5	4	is	be	AUX
3484zg66p2g	5	5	broken	break	VERB
3484zg66p2g	5	6	down	down	ADP
3484zg66p2g	5	7	into	into	ADP
3484zg66p2g	5	8	key	key	ADJ
3484zg66p2g	5	9	steps	step	NOUN
3484zg66p2g	5	10	namely	namely	ADV
3484zg66p2g	5	11	,	,	PUNCT
3484zg66p2g	5	12	nitride	nitride	PROPN
3484zg66p2g	5	13	deposition	deposition	NOUN
3484zg66p2g	5	14	,	,	PUNCT
3484zg66p2g	5	15	dry	dry	ADJ
3484zg66p2g	5	16	etching	etching	NOUN
3484zg66p2g	5	17	of	of	ADP
3484zg66p2g	5	18	the	the	DET
3484zg66p2g	5	19	nitride	nitride	PROPN
3484zg66p2g	5	20	and	and	CCONJ
3484zg66p2g	5	21	nitride	nitride	PROPN
3484zg66p2g	5	22	removal	removal	PROPN
3484zg66p2g	5	23	.	.	PUNCT
3484zg66p2g	6	1	each	each	DET
3484zg66p2g	6	2	step	step	NOUN
3484zg66p2g	6	3	is	be	AUX
3484zg66p2g	6	4	individually	individually	ADV
3484zg66p2g	6	5	studied	study	VERB
3484zg66p2g	6	6	and	and	CCONJ
3484zg66p2g	6	7	characterized	characterize	VERB
3484zg66p2g	6	8	.	.	PUNCT
3484zg66p2g	7	1	suprem3	suprem3	PROPN
3484zg66p2g	7	2	software	software	NOUN
3484zg66p2g	7	3	has	have	AUX
3484zg66p2g	7	4	been	be	AUX
3484zg66p2g	7	5	used	use	VERB
3484zg66p2g	7	6	to	to	PART
3484zg66p2g	7	7	simulate	simulate	VERB
3484zg66p2g	7	8	the	the	DET
3484zg66p2g	7	9	fabrication	fabrication	NOUN
3484zg66p2g	7	10	process	process	NOUN
3484zg66p2g	7	11	and	and	CCONJ
3484zg66p2g	7	12	find	find	VERB
3484zg66p2g	7	13	the	the	DET
3484zg66p2g	7	14	optimal	optimal	ADJ
3484zg66p2g	7	15	parameters	parameter	NOUN
3484zg66p2g	7	16	for	for	ADP
3484zg66p2g	7	17	different	different	ADJ
3484zg66p2g	7	18	fabrication	fabrication	NOUN
3484zg66p2g	7	19	steps	step	NOUN
3484zg66p2g	7	20	.	.	PUNCT
3484zg66p2g	8	1	the	the	DET
3484zg66p2g	8	2	mosfet	mosfet	NOUN
3484zg66p2g	8	3	devices	device	NOUN
3484zg66p2g	8	4	with	with	ADP
3484zg66p2g	8	5	designed	design	VERB
3484zg66p2g	8	6	threshold	threshold	NOUN
3484zg66p2g	8	7	voltages	voltage	NOUN
3484zg66p2g	8	8	of	of	ADP
3484zg66p2g	8	9	1.25	1.25	NUM
3484zg66p2g	8	10	v	v	NOUN
3484zg66p2g	8	11	,	,	PUNCT
3484zg66p2g	8	12	1.5	1.5	NUM
3484zg66p2g	8	13	v	v	NOUN
3484zg66p2g	8	14	and	and	CCONJ
3484zg66p2g	8	15	1.75	1.75	NUM
3484zg66p2g	8	16	v	v	NOUN
3484zg66p2g	8	17	have	have	AUX
3484zg66p2g	8	18	been	be	AUX
3484zg66p2g	8	19	fabricated	fabricate	VERB
3484zg66p2g	8	20	.	.	PUNCT
3484zg66p2g	9	1	these	these	DET
3484zg66p2g	9	2	fabricated	fabricate	VERB
3484zg66p2g	9	3	devices	device	NOUN
3484zg66p2g	9	4	have	have	AUX
3484zg66p2g	9	5	been	be	AUX
3484zg66p2g	9	6	tested	test	VERB
3484zg66p2g	9	7	.	.	PUNCT
3484zg66p2g	10	1	the	the	DET
3484zg66p2g	10	2	quantities	quantity	NOUN
3484zg66p2g	10	3	measured	measure	VERB
3484zg66p2g	10	4	and	and	CCONJ
3484zg66p2g	10	5	analyzed	analyze	VERB
3484zg66p2g	10	6	are	be	AUX
3484zg66p2g	10	7	contact	contact	NOUN
3484zg66p2g	10	8	resistance	resistance	NOUN
3484zg66p2g	10	9	,	,	PUNCT
3484zg66p2g	10	10	threshold	threshold	NOUN
3484zg66p2g	10	11	voltage	voltage	NOUN
3484zg66p2g	10	12	,	,	PUNCT
3484zg66p2g	10	13	transconductance	transconductance	NOUN
3484zg66p2g	10	14	and	and	CCONJ
3484zg66p2g	10	15	subthreshold	subthreshold	ADJ
3484zg66p2g	10	16	current	current	ADJ
3484zg66p2g	10	17	characteristics	characteristic	NOUN
3484zg66p2g	10	18	.	.	PUNCT
3484zg66p2g	11	1	tlm	tlm	PROPN
3484zg66p2g	11	2	measurements	measurement	NOUN
3484zg66p2g	11	3	showed	show	VERB
3484zg66p2g	11	4	the	the	DET
3484zg66p2g	11	5	specific	specific	ADJ
3484zg66p2g	11	6	contact	contact	NOUN
3484zg66p2g	11	7	resistances	resistance	NOUN
3484zg66p2g	11	8	for	for	ADP
3484zg66p2g	11	9	the	the	DET
3484zg66p2g	11	10	polysilicon	polysilicon	NOUN
3484zg66p2g	11	11	and	and	CCONJ
3484zg66p2g	11	12	p	p	NOUN
3484zg66p2g	11	13	-	-	PUNCT
3484zg66p2g	11	14	contact	contact	NOUN
3484zg66p2g	11	15	to	to	PART
3484zg66p2g	11	16	be	be	AUX
3484zg66p2g	11	17	in	in	ADP
3484zg66p2g	11	18	the	the	DET
3484zg66p2g	11	19	order	order	NOUN
3484zg66p2g	11	20	of	of	ADP
3484zg66p2g	11	21	0.001	0.001	NUM
3484zg66p2g	11	22	ohms	ohm	NOUN
3484zg66p2g	11	23	square	square	PROPN
3484zg66p2g	11	24	cm	cm	PROPN
3484zg66p2g	11	25	,	,	PUNCT
3484zg66p2g	11	26	which	which	PRON
3484zg66p2g	11	27	is	be	AUX
3484zg66p2g	11	28	very	very	ADV
3484zg66p2g	11	29	high	high	ADJ
3484zg66p2g	11	30	(	(	PUNCT
3484zg66p2g	11	31	3	3	NUM
3484zg66p2g	11	32	orders	order	NOUN
3484zg66p2g	11	33	of	of	ADP
3484zg66p2g	11	34	magnitude	magnitude	NOUN
3484zg66p2g	11	35	higher	high	ADJ
3484zg66p2g	11	36	)	)	PUNCT
3484zg66p2g	11	37	.	.	PUNCT
3484zg66p2g	12	1	the	the	DET
3484zg66p2g	12	2	nmos	nmos	PROPN
3484zg66p2g	12	3	devices	devices	PROPN
3484zg66p2g	12	4	with	with	ADP
3484zg66p2g	12	5	designed	design	VERB
3484zg66p2g	12	6	threshold	threshold	NOUN
3484zg66p2g	12	7	voltages	voltage	NOUN
3484zg66p2g	12	8	of	of	ADP
3484zg66p2g	12	9	1.5	1.5	NUM
3484zg66p2g	12	10	volts	volt	NOUN
3484zg66p2g	12	11	,	,	PUNCT
3484zg66p2g	12	12	were	be	AUX
3484zg66p2g	12	13	found	find	VERB
3484zg66p2g	12	14	to	to	PART
3484zg66p2g	12	15	actually	actually	ADV
3484zg66p2g	12	16	have	have	VERB
3484zg66p2g	12	17	threshold	threshold	NOUN
3484zg66p2g	12	18	voltages	voltage	NOUN
3484zg66p2g	12	19	around	around	ADP
3484zg66p2g	12	20	1	1	NUM
3484zg66p2g	12	21	volt	volt	NOUN
3484zg66p2g	12	22	.	.	PUNCT
3484zg66p2g	13	1	all	all	DET
3484zg66p2g	13	2	the	the	DET
3484zg66p2g	13	3	devices	device	NOUN
3484zg66p2g	13	4	suffered	suffer	VERB
3484zg66p2g	13	5	from	from	ADP
3484zg66p2g	13	6	gate	gate	ADJ
3484zg66p2g	13	7	leakage	leakage	NOUN
3484zg66p2g	13	8	.	.	PUNCT