id	sid	tid	token	lemma	pos
2801pg1765v	1	1	the	the	DET
2801pg1765v	1	2	design	design	NOUN
2801pg1765v	1	3	and	and	CCONJ
2801pg1765v	1	4	fabrication	fabrication	NOUN
2801pg1765v	1	5	of	of	ADP
2801pg1765v	1	6	a	a	DET
2801pg1765v	1	7	tunable	tunable	ADJ
2801pg1765v	1	8	fabry	fabry	NOUN
2801pg1765v	1	9	-	-	PUNCT
2801pg1765v	1	10	perot	perot	ADJ
2801pg1765v	1	11	interferometer	interferometer	ADJ
2801pg1765v	1	12	(	(	PUNCT
2801pg1765v	1	13	fpi	fpi	ADJ
2801pg1765v	1	14	)	)	PUNCT
2801pg1765v	1	15	åáv	åáv	NOUN
2801pg1765v	1	16	photodiode	photodiode	NOUN
2801pg1765v	1	17	(	(	PUNCT
2801pg1765v	1	18	pd	pd	PROPN
2801pg1765v	1	19	)	)	PUNCT
2801pg1765v	1	20	spectral	spectral	ADJ
2801pg1765v	1	21	image	image	NOUN
2801pg1765v	1	22	sensor	sensor	NOUN
2801pg1765v	1	23	using	use	VERB
2801pg1765v	1	24	a	a	DET
2801pg1765v	1	25	complementary	complementary	ADJ
2801pg1765v	1	26	metal	metal	NOUN
2801pg1765v	1	27	oxide	oxide	NOUN
2801pg1765v	1	28	semiconductor	semiconductor	NOUN
2801pg1765v	1	29	(	(	PUNCT
2801pg1765v	1	30	cmos	cmos	NOUN
2801pg1765v	1	31	)	)	PUNCT
2801pg1765v	1	32	compatible	compatible	ADJ
2801pg1765v	1	33	process	process	NOUN
2801pg1765v	1	34	on	on	ADP
2801pg1765v	1	35	silicon	silicon	NOUN
2801pg1765v	1	36	is	be	AUX
2801pg1765v	1	37	reported	report	VERB
2801pg1765v	1	38	in	in	ADP
2801pg1765v	1	39	the	the	DET
2801pg1765v	1	40	present	present	ADJ
2801pg1765v	1	41	work	work	NOUN
2801pg1765v	1	42	.	.	PUNCT
2801pg1765v	2	1	the	the	DET
2801pg1765v	2	2	system	system	NOUN
2801pg1765v	2	3	is	be	AUX
2801pg1765v	2	4	designed	design	VERB
2801pg1765v	2	5	to	to	PART
2801pg1765v	2	6	be	be	AUX
2801pg1765v	2	7	integrated	integrate	VERB
2801pg1765v	2	8	on	on	ADP
2801pg1765v	2	9	a	a	DET
2801pg1765v	2	10	cellular	cellular	ADJ
2801pg1765v	2	11	neuralonlinear	neuralonlinear	ADJ
2801pg1765v	2	12	network	network	NOUN
2801pg1765v	2	13	(	(	PUNCT
2801pg1765v	2	14	cnn	cnn	PROPN
2801pg1765v	2	15	)	)	PUNCT
2801pg1765v	2	16	visual	visual	ADJ
2801pg1765v	2	17	microprocessor	microprocessor	NOUN
2801pg1765v	2	18	chip	chip	NOUN
2801pg1765v	2	19	which	which	PRON
2801pg1765v	2	20	operates	operate	VERB
2801pg1765v	2	21	at	at	ADP
2801pg1765v	2	22	20,000	20,000	NUM
2801pg1765v	2	23	frames	frame	NOUN
2801pg1765v	2	24	per	per	ADP
2801pg1765v	2	25	second	second	NOUN
2801pg1765v	2	26	and	and	CCONJ
2801pg1765v	2	27	serve	serve	VERB
2801pg1765v	2	28	as	as	ADP
2801pg1765v	2	29	the	the	DET
2801pg1765v	2	30	image	image	NOUN
2801pg1765v	2	31	sensor	sensor	NOUN
2801pg1765v	2	32	in	in	ADP
2801pg1765v	2	33	the	the	DET
2801pg1765v	2	34	visible	visible	ADJ
2801pg1765v	2	35	and	and	CCONJ
2801pg1765v	2	36	near	near	ADP
2801pg1765v	2	37	ir	ir	NOUN
2801pg1765v	2	38	wavelength	wavelength	NOUN
2801pg1765v	2	39	range	range	NOUN
2801pg1765v	2	40	.	.	PUNCT
2801pg1765v	3	1	a	a	DET
2801pg1765v	3	2	planar	planar	NOUN
2801pg1765v	3	3	interdigitated	interdigitate	VERB
2801pg1765v	3	4	pin	pin	PROPN
2801pg1765v	3	5	silicon	silicon	NOUN
2801pg1765v	3	6	photodiode	photodiode	NOUN
2801pg1765v	3	7	was	be	AUX
2801pg1765v	3	8	fabricated	fabricate	VERB
2801pg1765v	3	9	.	.	PUNCT
2801pg1765v	4	1	the	the	DET
2801pg1765v	4	2	dc	dc	PROPN
2801pg1765v	4	3	photoresponse	photoresponse	PROPN
2801pg1765v	4	4	,	,	PUNCT
2801pg1765v	4	5	frequency	frequency	NOUN
2801pg1765v	4	6	response	response	NOUN
2801pg1765v	4	7	,	,	PUNCT
2801pg1765v	4	8	and	and	CCONJ
2801pg1765v	4	9	spectral	spectral	ADJ
2801pg1765v	4	10	response	response	NOUN
2801pg1765v	4	11	of	of	ADP
2801pg1765v	4	12	the	the	DET
2801pg1765v	4	13	photodiode	photodiode	NOUN
2801pg1765v	4	14	have	have	AUX
2801pg1765v	4	15	been	be	AUX
2801pg1765v	4	16	characterized	characterize	VERB
2801pg1765v	4	17	.	.	PUNCT
2801pg1765v	5	1	the	the	DET
2801pg1765v	5	2	pd	pd	PROPN
2801pg1765v	5	3	demonstrated	demonstrate	VERB
2801pg1765v	5	4	sufficient	sufficient	ADJ
2801pg1765v	5	5	bandwidth	bandwidth	NOUN
2801pg1765v	5	6	(	(	PUNCT
2801pg1765v	5	7	tens	ten	NOUN
2801pg1765v	5	8	of	of	ADP
2801pg1765v	5	9	mhz	mhz	NOUN
2801pg1765v	5	10	)	)	PUNCT
2801pg1765v	5	11	for	for	ADP
2801pg1765v	5	12	the	the	DET
2801pg1765v	5	13	application	application	NOUN
2801pg1765v	5	14	of	of	ADP
2801pg1765v	5	15	this	this	DET
2801pg1765v	5	16	project	project	NOUN
2801pg1765v	5	17	and	and	CCONJ
2801pg1765v	5	18	appreciable	appreciable	ADJ
2801pg1765v	5	19	quantum	quantum	NOUN
2801pg1765v	5	20	efficiency	efficiency	NOUN
2801pg1765v	5	21	(	(	PUNCT
2801pg1765v	5	22	>	>	PUNCT
2801pg1765v	5	23	50	50	NUM
2801pg1765v	5	24	%	%	NOUN
2801pg1765v	5	25	)	)	PUNCT
2801pg1765v	5	26	from	from	ADP
2801pg1765v	5	27	400	400	NUM
2801pg1765v	5	28	nm	nm	NOUN
2801pg1765v	5	29	to	to	ADP
2801pg1765v	5	30	900	900	NUM
2801pg1765v	5	31	nm	nm	NOUN
2801pg1765v	5	32	.	.	PUNCT
2801pg1765v	6	1	an	an	DET
2801pg1765v	6	2	fpi	fpi	NOUN
2801pg1765v	6	3	with	with	ADP
2801pg1765v	6	4	al	al	PROPN
2801pg1765v	6	5	mirrors	mirror	NOUN
2801pg1765v	6	6	was	be	AUX
2801pg1765v	6	7	fabricated	fabricate	VERB
2801pg1765v	6	8	using	use	VERB
2801pg1765v	6	9	surface	surface	NOUN
2801pg1765v	6	10	micromachining	micromachine	VERB
2801pg1765v	6	11	techniques	technique	NOUN
2801pg1765v	6	12	on	on	ADP
2801pg1765v	6	13	a	a	DET
2801pg1765v	6	14	silicon	silicon	NOUN
2801pg1765v	6	15	substrate	substrate	NOUN
2801pg1765v	6	16	.	.	PUNCT
2801pg1765v	7	1	the	the	DET
2801pg1765v	7	2	tuning	tuning	NOUN
2801pg1765v	7	3	of	of	ADP
2801pg1765v	7	4	the	the	DET
2801pg1765v	7	5	fpi	fpi	NOUN
2801pg1765v	7	6	at	at	ADP
2801pg1765v	7	7	different	different	ADJ
2801pg1765v	7	8	bias	bias	NOUN
2801pg1765v	7	9	voltages	voltage	NOUN
2801pg1765v	7	10	was	be	AUX
2801pg1765v	7	11	demonstrated	demonstrate	VERB
2801pg1765v	7	12	by	by	ADP
2801pg1765v	7	13	measuring	measure	VERB
2801pg1765v	7	14	the	the	DET
2801pg1765v	7	15	reflectance	reflectance	NOUN
2801pg1765v	7	16	spectrum	spectrum	NOUN
2801pg1765v	7	17	of	of	ADP
2801pg1765v	7	18	the	the	DET
2801pg1765v	7	19	fpi	fpi	NOUN
2801pg1765v	7	20	.	.	PUNCT
2801pg1765v	8	1	the	the	DET
2801pg1765v	8	2	result	result	NOUN
2801pg1765v	8	3	showed	show	VERB
2801pg1765v	8	4	that	that	SCONJ
2801pg1765v	8	5	for	for	ADP
2801pg1765v	8	6	an	an	DET
2801pg1765v	8	7	fpi	fpi	NOUN
2801pg1765v	8	8	with	with	ADP
2801pg1765v	8	9	2.94	2.94	NUM
2801pg1765v	8	10	µ	µ	NOUN
2801pg1765v	8	11	m	m	NOUN
2801pg1765v	8	12	original	original	ADJ
2801pg1765v	8	13	effective	effective	ADJ
2801pg1765v	8	14	cavity	cavity	NOUN
2801pg1765v	8	15	length	length	NOUN
2801pg1765v	8	16	,	,	PUNCT
2801pg1765v	8	17	10	10	NUM
2801pg1765v	8	18	v	v	NOUN
2801pg1765v	8	19	of	of	ADP
2801pg1765v	8	20	applied	apply	VERB
2801pg1765v	8	21	bias	bias	NOUN
2801pg1765v	8	22	voltage	voltage	NOUN
2801pg1765v	8	23	can	can	AUX
2801pg1765v	8	24	tune	tune	VERB
2801pg1765v	8	25	the	the	DET
2801pg1765v	8	26	fpi	fpi	NOUN
2801pg1765v	8	27	over	over	ADP
2801pg1765v	8	28	a	a	DET
2801pg1765v	8	29	0.4	0.4	NUM
2801pg1765v	8	30	µ	µ	NOUN
2801pg1765v	8	31	m	m	NOUN
2801pg1765v	8	32	change	change	NOUN
2801pg1765v	8	33	in	in	ADP
2801pg1765v	8	34	effective	effective	ADJ
2801pg1765v	8	35	cavity	cavity	NOUN
2801pg1765v	8	36	length	length	NOUN
2801pg1765v	8	37	.	.	PUNCT
2801pg1765v	9	1	the	the	DET
2801pg1765v	9	2	quantum	quantum	ADJ
2801pg1765v	9	3	efficiency	efficiency	NOUN
2801pg1765v	9	4	of	of	ADP
2801pg1765v	9	5	an	an	DET
2801pg1765v	9	6	fpi	fpi	ADJ
2801pg1765v	9	7	/	/	SYM
2801pg1765v	9	8	pd	pd	PROPN
2801pg1765v	9	9	device	device	NOUN
2801pg1765v	9	10	was	be	AUX
2801pg1765v	9	11	predicted	predict	VERB
2801pg1765v	9	12	to	to	PART
2801pg1765v	9	13	be	be	AUX
2801pg1765v	9	14	22	22	NUM
2801pg1765v	9	15	%	%	NOUN
2801pg1765v	9	16	at	at	ADP
2801pg1765v	9	17	the	the	DET
2801pg1765v	9	18	wavelength	wavelength	NOUN
2801pg1765v	9	19	of	of	ADP
2801pg1765v	9	20	450	450	NUM
2801pg1765v	9	21	nm	nm	NOUN
2801pg1765v	9	22	based	base	VERB
2801pg1765v	9	23	on	on	ADP
2801pg1765v	9	24	the	the	DET
2801pg1765v	9	25	pd	pd	PROPN
2801pg1765v	9	26	and	and	CCONJ
2801pg1765v	9	27	fpi	fpi	ADJ
2801pg1765v	9	28	performance	performance	NOUN
2801pg1765v	9	29	.	.	PUNCT
2801pg1765v	10	1	the	the	DET
2801pg1765v	10	2	concept	concept	NOUN
2801pg1765v	10	3	of	of	ADP
2801pg1765v	10	4	making	make	VERB
2801pg1765v	10	5	an	an	DET
2801pg1765v	10	6	fpi	fpi	ADJ
2801pg1765v	10	7	/	/	SYM
2801pg1765v	10	8	diffraction	diffraction	NOUN
2801pg1765v	10	9	grating	grating	PROPN
2801pg1765v	10	10	/	/	SYM
2801pg1765v	10	11	pd	pd	PROPN
2801pg1765v	10	12	array	array	PROPN
2801pg1765v	10	13	microspectrometer	microspectrometer	PROPN
2801pg1765v	10	14	was	be	AUX
2801pg1765v	10	15	evaluated	evaluate	VERB
2801pg1765v	10	16	.	.	PUNCT
2801pg1765v	11	1	such	such	DET
2801pg1765v	11	2	a	a	DET
2801pg1765v	11	3	microspectrometer	microspectrometer	NOUN
2801pg1765v	11	4	is	be	AUX
2801pg1765v	11	5	able	able	ADJ
2801pg1765v	11	6	to	to	PART
2801pg1765v	11	7	provide	provide	VERB
2801pg1765v	11	8	a	a	DET
2801pg1765v	11	9	better	well	ADJ
2801pg1765v	11	10	tuning	tuning	NOUN
2801pg1765v	11	11	range	range	NOUN
2801pg1765v	11	12	than	than	ADP
2801pg1765v	11	13	the	the	DET
2801pg1765v	11	14	fpi	fpi	NOUN
2801pg1765v	11	15	alone	alone	ADV
2801pg1765v	11	16	and	and	CCONJ
2801pg1765v	11	17	better	well	ADJ
2801pg1765v	11	18	resolution	resolution	NOUN
2801pg1765v	11	19	than	than	ADP
2801pg1765v	11	20	the	the	DET
2801pg1765v	11	21	diffraction	diffraction	NOUN
2801pg1765v	11	22	grating	grate	VERB
2801pg1765v	11	23	alone	alone	ADV
2801pg1765v	11	24	.	.	PUNCT
2801pg1765v	12	1	a	a	DET
2801pg1765v	12	2	design	design	NOUN
2801pg1765v	12	3	example	example	NOUN
2801pg1765v	12	4	,	,	PUNCT
2801pg1765v	12	5	simulation	simulation	NOUN
2801pg1765v	12	6	,	,	PUNCT
2801pg1765v	12	7	and	and	CCONJ
2801pg1765v	12	8	fabrication	fabrication	NOUN
2801pg1765v	12	9	process	process	NOUN
2801pg1765v	12	10	flow	flow	NOUN
2801pg1765v	12	11	were	be	AUX
2801pg1765v	12	12	also	also	ADV
2801pg1765v	12	13	discussed	discuss	VERB
2801pg1765v	12	14	.	.	PUNCT