id	sid	tid	token	lemma	pos
0g354f1841c	1	1	electrostatic	electrostatic	ADJ
0g354f1841c	1	2	drive	drive	NOUN
0g354f1841c	1	3	is	be	AUX
0g354f1841c	1	4	the	the	DET
0g354f1841c	1	5	most	most	ADV
0g354f1841c	1	6	common	common	ADJ
0g354f1841c	1	7	actuation	actuation	NOUN
0g354f1841c	1	8	method	method	NOUN
0g354f1841c	1	9	in	in	ADP
0g354f1841c	1	10	mems	mem	NOUN
0g354f1841c	1	11	due	due	ADP
0g354f1841c	1	12	to	to	ADP
0g354f1841c	1	13	its	its	PRON
0g354f1841c	1	14	low	low	ADJ
0g354f1841c	1	15	power	power	NOUN
0g354f1841c	1	16	,	,	PUNCT
0g354f1841c	1	17	simplicity	simplicity	NOUN
0g354f1841c	1	18	and	and	CCONJ
0g354f1841c	1	19	ability	ability	NOUN
0g354f1841c	1	20	to	to	PART
0g354f1841c	1	21	generate	generate	VERB
0g354f1841c	1	22	large	large	ADJ
0g354f1841c	1	23	forces	force	NOUN
0g354f1841c	1	24	.	.	PUNCT
0g354f1841c	2	1	however	however	ADV
0g354f1841c	2	2	,	,	PUNCT
0g354f1841c	2	3	an	an	DET
0g354f1841c	2	4	intrinsic	intrinsic	ADJ
0g354f1841c	2	5	pull	pull	VERB
0g354f1841c	2	6	-	-	PUNCT
0g354f1841c	2	7	in	in	ADP
0g354f1841c	2	8	failure	failure	NOUN
0g354f1841c	2	9	in	in	ADP
0g354f1841c	2	10	electrostatic	electrostatic	ADJ
0g354f1841c	2	11	actuation	actuation	NOUN
0g354f1841c	2	12	limits	limit	VERB
0g354f1841c	2	13	its	its	PRON
0g354f1841c	2	14	workable	workable	ADJ
0g354f1841c	2	15	range	range	NOUN
0g354f1841c	2	16	to	to	ADP
0g354f1841c	2	17	only	only	ADV
0g354f1841c	2	18	a	a	DET
0g354f1841c	2	19	part	part	NOUN
0g354f1841c	2	20	of	of	ADP
0g354f1841c	2	21	the	the	DET
0g354f1841c	2	22	initial	initial	ADJ
0g354f1841c	2	23	electrode	electrode	NOUN
0g354f1841c	2	24	gap	gap	NOUN
0g354f1841c	2	25	.	.	PUNCT
0g354f1841c	3	1	this	this	DET
0g354f1841c	3	2	dissertation	dissertation	NOUN
0g354f1841c	3	3	investigates	investigate	VERB
0g354f1841c	3	4	an	an	DET
0g354f1841c	3	5	effective	effective	ADJ
0g354f1841c	3	6	lateral	lateral	ADJ
0g354f1841c	3	7	-	-	PUNCT
0g354f1841c	3	8	drive	drive	NOUN
0g354f1841c	3	9	method	method	NOUN
0g354f1841c	3	10	to	to	PART
0g354f1841c	3	11	solve	solve	VERB
0g354f1841c	3	12	this	this	DET
0g354f1841c	3	13	pull	pull	VERB
0g354f1841c	3	14	-	-	PUNCT
0g354f1841c	3	15	in	in	ADP
0g354f1841c	3	16	problem	problem	NOUN
0g354f1841c	3	17	by	by	ADP
0g354f1841c	3	18	building	build	VERB
0g354f1841c	3	19	electrodes	electrode	NOUN
0g354f1841c	3	20	laterally	laterally	ADV
0g354f1841c	3	21	offset	offset	VERB
0g354f1841c	3	22	rather	rather	ADV
0g354f1841c	3	23	than	than	ADP
0g354f1841c	3	24	directly	directly	ADV
0g354f1841c	3	25	opposite	opposite	ADJ
0g354f1841c	3	26	to	to	ADP
0g354f1841c	3	27	each	each	DET
0g354f1841c	3	28	other	other	ADJ
0g354f1841c	3	29	.	.	PUNCT
0g354f1841c	4	1	an	an	DET
0g354f1841c	4	2	offset	offset	ADJ
0g354f1841c	4	3	electrode	electrode	ADJ
0g354f1841c	4	4	capacitor	capacitor	NOUN
0g354f1841c	4	5	model	model	NOUN
0g354f1841c	4	6	is	be	AUX
0g354f1841c	4	7	proposed	propose	VERB
0g354f1841c	4	8	and	and	CCONJ
0g354f1841c	4	9	results	result	NOUN
0g354f1841c	4	10	in	in	ADP
0g354f1841c	4	11	a	a	DET
0g354f1841c	4	12	closed	closed	ADJ
0g354f1841c	4	13	-	-	PUNCT
0g354f1841c	4	14	form	form	NOUN
0g354f1841c	4	15	capacitance	capacitance	NOUN
0g354f1841c	4	16	formula	formula	NOUN
0g354f1841c	4	17	for	for	ADP
0g354f1841c	4	18	theoretical	theoretical	ADJ
0g354f1841c	4	19	analysis	analysis	NOUN
0g354f1841c	4	20	.	.	PUNCT
0g354f1841c	5	1	calculations	calculation	NOUN
0g354f1841c	5	2	show	show	VERB
0g354f1841c	5	3	that	that	SCONJ
0g354f1841c	5	4	laterally	laterally	ADV
0g354f1841c	5	5	-	-	PUNCT
0g354f1841c	5	6	driven	drive	VERB
0g354f1841c	5	7	beams	beam	NOUN
0g354f1841c	5	8	may	may	AUX
0g354f1841c	5	9	require	require	VERB
0g354f1841c	5	10	a	a	DET
0g354f1841c	5	11	smaller	small	ADJ
0g354f1841c	5	12	operating	operating	NOUN
0g354f1841c	5	13	voltage	voltage	NOUN
0g354f1841c	5	14	than	than	SCONJ
0g354f1841c	5	15	do	do	VERB
0g354f1841c	5	16	some	some	DET
0g354f1841c	5	17	other	other	ADJ
0g354f1841c	5	18	methods	method	NOUN
0g354f1841c	5	19	,	,	PUNCT
0g354f1841c	5	20	and	and	CCONJ
0g354f1841c	5	21	cover	cover	VERB
0g354f1841c	5	22	nearly	nearly	ADV
0g354f1841c	5	23	the	the	DET
0g354f1841c	5	24	full	full	ADJ
0g354f1841c	5	25	travel	travel	NOUN
0g354f1841c	5	26	range	range	NOUN
0g354f1841c	5	27	.	.	PUNCT
0g354f1841c	6	1	furthermore	furthermore	ADV
0g354f1841c	6	2	,	,	PUNCT
0g354f1841c	6	3	the	the	DET
0g354f1841c	6	4	driving	driving	NOUN
0g354f1841c	6	5	performance	performance	NOUN
0g354f1841c	6	6	is	be	AUX
0g354f1841c	6	7	affected	affect	VERB
0g354f1841c	6	8	by	by	ADP
0g354f1841c	6	9	the	the	DET
0g354f1841c	6	10	structure	structure	NOUN
0g354f1841c	6	11	's	's	PART
0g354f1841c	6	12	lateral	lateral	ADJ
0g354f1841c	6	13	gap	gap	NOUN
0g354f1841c	6	14	.	.	PUNCT
0g354f1841c	7	1	lateral	lateral	ADJ
0g354f1841c	7	2	gap	gap	NOUN
0g354f1841c	7	3	less	less	ADJ
0g354f1841c	7	4	than	than	ADP
0g354f1841c	7	5	a	a	DET
0g354f1841c	7	6	critical	critical	ADJ
0g354f1841c	7	7	value	value	NOUN
0g354f1841c	7	8	are	be	AUX
0g354f1841c	7	9	still	still	ADV
0g354f1841c	7	10	susceptible	susceptible	ADJ
0g354f1841c	7	11	to	to	ADP
0g354f1841c	7	12	the	the	DET
0g354f1841c	7	13	pull	pull	VERB
0g354f1841c	7	14	-	-	PUNCT
0g354f1841c	7	15	in	in	ADP
0g354f1841c	7	16	problem	problem	NOUN
0g354f1841c	7	17	.	.	PUNCT
0g354f1841c	8	1	for	for	ADP
0g354f1841c	8	2	devices	device	NOUN
0g354f1841c	8	3	on	on	ADP
0g354f1841c	8	4	a	a	DET
0g354f1841c	8	5	planar	planar	ADJ
0g354f1841c	8	6	semiconductor	semiconductor	NOUN
0g354f1841c	8	7	substrate	substrate	NOUN
0g354f1841c	8	8	,	,	PUNCT
0g354f1841c	8	9	this	this	DET
0g354f1841c	8	10	method	method	NOUN
0g354f1841c	8	11	is	be	AUX
0g354f1841c	8	12	electrically	electrically	ADV
0g354f1841c	8	13	equivalent	equivalent	ADJ
0g354f1841c	8	14	to	to	ADP
0g354f1841c	8	15	the	the	DET
0g354f1841c	8	16	series	series	NOUN
0g354f1841c	8	17	capacitor	capacitor	NOUN
0g354f1841c	8	18	mechanism	mechanism	NOUN
0g354f1841c	8	19	due	due	ADP
0g354f1841c	8	20	to	to	ADP
0g354f1841c	8	21	the	the	DET
0g354f1841c	8	22	high	high	ADJ
0g354f1841c	8	23	substrate	substrate	NOUN
0g354f1841c	8	24	dielectric	dielectric	NOUN
0g354f1841c	8	25	constant	constant	ADJ
0g354f1841c	8	26	.	.	PUNCT
0g354f1841c	9	1	we	we	PRON
0g354f1841c	9	2	demonstrate	demonstrate	VERB
0g354f1841c	9	3	that	that	SCONJ
0g354f1841c	9	4	the	the	DET
0g354f1841c	9	5	substrate	substrate	NOUN
0g354f1841c	9	6	may	may	AUX
0g354f1841c	9	7	be	be	AUX
0g354f1841c	9	8	etched	etch	VERB
0g354f1841c	9	9	away	away	ADV
0g354f1841c	9	10	to	to	PART
0g354f1841c	9	11	improve	improve	VERB
0g354f1841c	9	12	the	the	DET
0g354f1841c	9	13	performance	performance	NOUN
0g354f1841c	9	14	.	.	PUNCT
0g354f1841c	10	1	a	a	DET
0g354f1841c	10	2	laterally	laterally	ADV
0g354f1841c	10	3	-	-	PUNCT
0g354f1841c	10	4	driven	drive	VERB
0g354f1841c	10	5	test	test	NOUN
0g354f1841c	10	6	structure	structure	NOUN
0g354f1841c	10	7	consisting	consist	VERB
0g354f1841c	10	8	of	of	ADP
0g354f1841c	10	9	a	a	DET
0g354f1841c	10	10	fixed	fix	VERB
0g354f1841c	10	11	-	-	PUNCT
0g354f1841c	10	12	fixed	fix	VERB
0g354f1841c	10	13	aluminum	aluminum	NOUN
0g354f1841c	10	14	beam	beam	NOUN
0g354f1841c	10	15	and	and	CCONJ
0g354f1841c	10	16	two	two	NUM
0g354f1841c	10	17	lateral	lateral	ADJ
0g354f1841c	10	18	substrate	substrate	NOUN
0g354f1841c	10	19	electrodes	electrode	NOUN
0g354f1841c	10	20	is	be	AUX
0g354f1841c	10	21	designed	design	VERB
0g354f1841c	10	22	and	and	CCONJ
0g354f1841c	10	23	fabricated	fabricate	VERB
0g354f1841c	10	24	,	,	PUNCT
0g354f1841c	10	25	with	with	ADP
0g354f1841c	10	26	etched	etch	VERB
0g354f1841c	10	27	substrate	substrate	NOUN
0g354f1841c	10	28	underneath	underneath	ADV
0g354f1841c	10	29	.	.	PUNCT
0g354f1841c	11	1	by	by	ADP
0g354f1841c	11	2	measuring	measure	VERB
0g354f1841c	11	3	the	the	DET
0g354f1841c	11	4	maximum	maximum	ADJ
0g354f1841c	11	5	beam	beam	NOUN
0g354f1841c	11	6	deflection	deflection	NOUN
0g354f1841c	11	7	with	with	ADP
0g354f1841c	11	8	interferometric	interferometric	ADJ
0g354f1841c	11	9	profiler	profiler	NOUN
0g354f1841c	11	10	,	,	PUNCT
0g354f1841c	11	11	the	the	DET
0g354f1841c	11	12	lateral	lateral	ADV
0g354f1841c	11	13	-	-	PUNCT
0g354f1841c	11	14	driven	drive	VERB
0g354f1841c	11	15	method	method	NOUN
0g354f1841c	11	16	is	be	AUX
0g354f1841c	11	17	characterized	characterize	VERB
0g354f1841c	11	18	experimentally	experimentally	ADV
0g354f1841c	11	19	.	.	PUNCT
0g354f1841c	12	1	misalignment	misalignment	PROPN
0g354f1841c	12	2	in	in	ADP
0g354f1841c	12	3	process	process	NOUN
0g354f1841c	12	4	degrades	degrade	VERB
0g354f1841c	12	5	the	the	DET
0g354f1841c	12	6	performance	performance	NOUN
0g354f1841c	12	7	.	.	PUNCT
0g354f1841c	13	1	a	a	DET
0g354f1841c	13	2	self	self	NOUN
0g354f1841c	13	3	-	-	PUNCT
0g354f1841c	13	4	aligned	align	VERB
0g354f1841c	13	5	process	process	NOUN
0g354f1841c	13	6	is	be	AUX
0g354f1841c	13	7	developed	develop	VERB
0g354f1841c	13	8	for	for	ADP
0g354f1841c	13	9	fabricating	fabricate	VERB
0g354f1841c	13	10	a	a	DET
0g354f1841c	13	11	tunable	tunable	ADJ
0g354f1841c	13	12	laterally	laterally	ADV
0g354f1841c	13	13	-	-	PUNCT
0g354f1841c	13	14	driven	drive	VERB
0g354f1841c	13	15	fabry	fabry	NOUN
0g354f1841c	13	16	-	-	PUNCT
0g354f1841c	13	17	perot	perot	ADJ
0g354f1841c	13	18	interferometer	interferometer	NOUN
0g354f1841c	13	19	.	.	PUNCT